JPH0225171B2 - - Google Patents

Info

Publication number
JPH0225171B2
JPH0225171B2 JP58165652A JP16565283A JPH0225171B2 JP H0225171 B2 JPH0225171 B2 JP H0225171B2 JP 58165652 A JP58165652 A JP 58165652A JP 16565283 A JP16565283 A JP 16565283A JP H0225171 B2 JPH0225171 B2 JP H0225171B2
Authority
JP
Japan
Prior art keywords
layer
atoms
layer region
gas
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58165652A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6057681A (ja
Inventor
Keishi Saito
Yukihiko Oonuki
Shigeru Oono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP58165652A priority Critical patent/JPS6057681A/ja
Priority to US06/647,791 priority patent/US4592983A/en
Publication of JPS6057681A publication Critical patent/JPS6057681A/ja
Publication of JPH0225171B2 publication Critical patent/JPH0225171B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
JP58165652A 1983-09-08 1983-09-08 電子写真用光導電部材 Granted JPS6057681A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58165652A JPS6057681A (ja) 1983-09-08 1983-09-08 電子写真用光導電部材
US06/647,791 US4592983A (en) 1983-09-08 1984-09-06 Photoconductive member having amorphous germanium and amorphous silicon regions with nitrogen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58165652A JPS6057681A (ja) 1983-09-08 1983-09-08 電子写真用光導電部材

Publications (2)

Publication Number Publication Date
JPS6057681A JPS6057681A (ja) 1985-04-03
JPH0225171B2 true JPH0225171B2 (fr) 1990-05-31

Family

ID=15816422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58165652A Granted JPS6057681A (ja) 1983-09-08 1983-09-08 電子写真用光導電部材

Country Status (1)

Country Link
JP (1) JPS6057681A (fr)

Also Published As

Publication number Publication date
JPS6057681A (ja) 1985-04-03

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