JPH02250977A - Device for forming mixture thin film - Google Patents
Device for forming mixture thin filmInfo
- Publication number
- JPH02250977A JPH02250977A JP1071293A JP7129389A JPH02250977A JP H02250977 A JPH02250977 A JP H02250977A JP 1071293 A JP1071293 A JP 1071293A JP 7129389 A JP7129389 A JP 7129389A JP H02250977 A JPH02250977 A JP H02250977A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- temperature
- raw material
- controlled
- sublimation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 13
- 239000010409 thin film Substances 0.000 title claims description 17
- 239000007789 gas Substances 0.000 claims abstract description 79
- 239000002994 raw material Substances 0.000 claims abstract description 34
- 238000000859 sublimation Methods 0.000 claims abstract description 32
- 230000008022 sublimation Effects 0.000 claims abstract description 32
- 238000002156 mixing Methods 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 239000002244 precipitate Substances 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 2
- 230000001276 controlling effect Effects 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000032258 transport Effects 0.000 description 8
- 238000002309 gasification Methods 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GXCLVBGFBYZDAG-UHFFFAOYSA-N N-[2-(1H-indol-3-yl)ethyl]-N-methylprop-2-en-1-amine Chemical compound CN(CCC1=CNC2=C1C=CC=C2)CC=C GXCLVBGFBYZDAG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、混合物薄膜形成装置に関し、例えば酸化物
高温超電導薄膜のように、比較的高温でガス化する原料
を用いて薄膜形成を実現する装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a mixture thin film forming apparatus, which realizes thin film formation using a raw material that gasifies at a relatively high temperature, such as an oxide high temperature superconducting thin film. It is related to the device.
（従来の技術〕
従来、この種の装置として、例えば特公昭６４−２６６
８号公報に示されているように、１５０〜２００℃の高
温になってガス化する原料を用いた場合、熱伝導ロス等
により冷却部分に原料が析出する現象が発生することが
指摘されている。この文献では、反応管へのガス導入部
を問題にし、ガス導入部の熱伝導ロスによる冷却を防ぐ
方法について提案されている。このように単一原料を用
いる場合には、このガス導入部までのガス経路は簡単で
あり、ガス導入部以外、温度に対してそれほど注意を払
う必要は生じなかった。(Prior art) Conventionally, as this type of device, for example, the Japanese Patent Publication No. 64-266
As shown in Publication No. 8, it has been pointed out that when raw materials that gasify at high temperatures of 150 to 200°C are used, a phenomenon occurs in which the raw materials precipitate in the cooling part due to heat conduction loss, etc. There is. This document considers the gas introduction section to the reaction tube as an issue and proposes a method for preventing cooling due to heat conduction loss in the gas introduction section. When a single raw material is used in this way, the gas path to the gas introduction part is simple, and there is no need to pay much attention to temperature other than the gas introduction part.
一方、ＧａＡｓ１ｌｌ形成用に代表される化合物薄膜形
成装置は、例えば特開昭６３−９０１２１号公報に示さ
れているように、そのガス供給系のガス経路は非常に複
雑である。このような、複雑な経路をとる理由は次のよ
うなものである。On the other hand, a compound thin film forming apparatus typically used for forming GaAs 1ll has a very complicated gas path in its gas supply system, as disclosed in, for example, Japanese Unexamined Patent Publication No. 63-90121. The reason for taking such a complicated route is as follows.
即ち、固体原料を用いてその昇華してガス化したものを
反応ガスとして使用する場合、そのガスの供給量をマス
フローコントローラ等で制御されたキャリアガスと呼ば
れる不活性ガスの流量で制御する。従って、実質の反応
ガスを制御するためには、一定のキャリアガス体積に含
まれる反応ガス量を一定に保つ必要がある。このために
は、固体から昇華して発生するガス量の経時変化をなく
すことが重要であり、そのために、昇華槽内のガス圧力
を一定に保つような工夫がなされている。That is, when sublimating and gasifying a solid raw material is used as a reaction gas, the amount of gas supplied is controlled by the flow rate of an inert gas called a carrier gas controlled by a mass flow controller or the like. Therefore, in order to control the actual reactive gas, it is necessary to keep the amount of reactive gas contained in a constant carrier gas volume constant. For this purpose, it is important to eliminate changes over time in the amount of gas generated by sublimation from the solid, and for this purpose, measures have been taken to keep the gas pressure in the sublimation tank constant.
また、昇華槽にキャリアガスを導入する瞬間のいわゆる
非定常時には、昇華の状態が不安定であるので、反応室
を通らない、いわゆる捨てラインを持ち、初期には反応
ガスを捨てラインに流し、定常状態に達してから始めて
反応ガスを反応室へ導入する方法が一般的である。また
、このような昇華性固体原料を２種類以上用いる場合に
は、そのガスの切換えが損失時間なく瞬時に行なえるよ
うに、ブロックパルプと呼ばれるデッドスペースの小さ
な一体型選択バルブを用いて行なれるようになり、安定
なガス供給が実現されるようになってきた。In addition, at the moment when the carrier gas is introduced into the sublimation tank, the state of sublimation is unstable. A common method is to introduce the reaction gas into the reaction chamber only after a steady state has been reached. In addition, when using two or more types of such sublimable solid raw materials, an integrated selection valve with a small dead space called a block pulp can be used to switch the gas instantly without losing time. As a result, a stable gas supply has become possible.
上記のような従来の化合物薄膜形成装置は、室温におい
て充分蒸気圧のとれる、例えばトリメチルガリウムのよ
うな昇華性原料等を用いる時を念頭において開発されて
きており、供給系、特に昇華槽以外の部分の温度制御に
ついては、それほど注意が払われていなかった。The conventional compound thin film forming apparatus described above has been developed keeping in mind the use of sublimable raw materials such as trimethyl gallium, which have a sufficient vapor pressure at room temperature, and have been developed with the supply system, especially those other than the sublimation tank, in mind. Less attention was paid to controlling the temperature of the parts.
一方、最近発見された酸化物高温超電導体の薄膜形成用
の原料は、室温付近では殆んどガス化せず、ガス化する
ためには、１００″Ｃもしくはそれ以上の高温を必要と
する。従って、このような原料をガスとして安定に反応
室へ供給するためには、その供給系がガス化温度以上に
保持されている必要があるばかりでな（、そのガス化麹
度は原料によって違い、それぞれの原料を適当なガス圧
が取れる温度に独立に制御し、かつ従来のように安定な
ガス供給を実現する必要がある。On the other hand, recently discovered raw materials for forming thin films of oxide high temperature superconductors hardly gasify near room temperature, and require a high temperature of 100''C or more to gasify. Therefore, in order to stably supply such a raw material as a gas to the reaction chamber, the supply system must not only be maintained at a temperature higher than the gasification temperature (the gasification malt level varies depending on the raw material). It is necessary to independently control the temperature of each raw material to a temperature at which an appropriate gas pressure can be obtained, and to realize a stable gas supply as in the conventional method.
従って、化合物薄膜形成装置においては、昇華槽ばかり
でなく、昇華槽以外の供給系部分もきっちりと温度制御
をする必要がある。Therefore, in a compound thin film forming apparatus, it is necessary to precisely control the temperature not only of the sublimation tank but also of the supply system parts other than the sublimation tank.
しかし、バルブ、特に一体型バルブと単なる配管部分と
の熱容量差は大きく、例えば両者を同一制御するとそこ
で大きな温度差が生じ、供給系内に制御不能な温度分布
が生じ、供給系内で析出が生じる等により、安定なガス
供給ができないという問題点があった。However, there is a large difference in heat capacity between a valve, especially an integrated valve, and a simple piping section. For example, if both are controlled in the same way, a large temperature difference will occur there, creating an uncontrollable temperature distribution within the supply system, and causing precipitation within the supply system. There was a problem in that a stable gas supply could not be achieved due to the occurrence of such problems.
この発明は上記のような従来のものの問題点に鑑みてな
されたもので、高温でガス化する原料を用いる場合でも
安定なガス供給ができる混合物薄膜形成装置を提供する
ことを目的としている。This invention was made in view of the problems of the conventional methods as described above, and an object thereof is to provide a mixture thin film forming apparatus that can stably supply gas even when using raw materials that are gasified at high temperatures.
この発明に係る混合物薄膜形成装置は、温度間ｆｆ１（
ＴＩ）された第１の原料を入れた第１昇華槽と、温度制
御（Ｔりされた第１の原料ガスを引き出す第１導出管と
、上記第１昇華槽とは別に温度制御（Ｔ６）された第２
の原料を入れた第２昇華槽と、上記第１導出管とは別に
温度間１（７４）された第２の原料ガスを引き出す第２
導出管と、それぞれのガス量を制御する第１．第２の流
量制御部と、それぞれ引き出された原料ガスを混合する
、独立に温度制御１（Ｔｉ）されたガス混合部を有する
ガス供給系と、混合されたガスが析出することのないよ
うに独立に温度間？Ｉ（Ｔ６）されたガス輸送系と、輸
送されてきたガスから薄膜を堆積させる反応室および排
気系とで構成し、更にその温度制御状態がＴＩ＜Ｔ！≦
Ｔ４≦Ｔｓ≦Ｔ、かつＴＩ ＜’ｒ３＜Ｔ、≦Ｔ６を満
足するように温度制御を行なうようにしたものである。The mixture thin film forming apparatus according to the present invention has a temperature range of ff1 (
A first sublimation tank containing the first raw material subjected to temperature control (TI), a first outlet pipe for drawing out the first raw material gas subjected to temperature control (T6), and a temperature control (T6) separately from the first sublimation tank. The second
A second sublimation tank containing the raw material of
The first one controls the outlet pipe and the amount of each gas. a second flow rate control section; a gas supply system having an independently temperature-controlled gas mixing section that mixes the drawn-out raw material gases; Independently between temperatures? It consists of a gas transport system that has been transported to I (T6), a reaction chamber that deposits a thin film from the transported gas, and an exhaust system, and furthermore, its temperature control state is TI<T! ≦
The temperature is controlled so that T4≦Ts≦T and TI<'r3<T, ≦T6 are satisfied.
この発明におけるガス供給系では、それぞれの昇華槽、
導出管、およびガス混合部を独立に温度制御するような
構成を採ったので、供給系内に制御不可能な温度分布が
生じることをなくすように作用する。また、ガス化温度
の低い原料を用いる第１の昇華槽および第１の導出管は
、ガス混合部まで適切な温度勾配が形成できるように作
用する。In the gas supply system in this invention, each sublimation tank,
Since the temperature of the outlet pipe and the gas mixing section is independently controlled, it is possible to prevent uncontrollable temperature distribution from occurring within the supply system. Further, the first sublimation tank and the first outlet pipe, which use raw materials with a low gasification temperature, function to form an appropriate temperature gradient up to the gas mixing section.
以下、この発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
図面は本発明の一実施例による混合物薄膜形成装置を示
し、図において、１は第１の昇華槽、２は第２の昇華槽
、３は第１のガスを導出する第１導出管、４は第２導出
管、５はガス混合部、６は混合されたガスを輸送する輸
送系、７は反応室、８は排気系、９．１０はそれぞれ第
１の昇華槽、第２の昇華槽に入って、いる、例えばＹｚ
（Ｃ＋＋Ｈｔ＊０ｔ）ｔ。The drawing shows a mixture thin film forming apparatus according to an embodiment of the present invention, and in the drawing, 1 is a first sublimation tank, 2 is a second sublimation tank, 3 is a first outlet pipe for delivering a first gas, and 4 is a first sublimation tank. is a second outlet pipe, 5 is a gas mixing section, 6 is a transport system for transporting the mixed gas, 7 is a reaction chamber, 8 is an exhaust system, 9.10 is a first sublimation tank and a second sublimation tank, respectively. For example, Yz
(C++Ht*0t)t.
Ｃｕｚ（ＣｚＨ＋＊Ｏｇ）を等の原料より発生するガス
の供給量を制御するガス流量制御部、１１〜１６はそれ
ぞれ独立に動作する温度調整部を示す。またＡ、Ｂはそ
れぞれガス化温度Ｔ、Ｔ富（Ｔ Ｉ＜ Ｔ ｔ）の第１
．第２の原料を示す。A gas flow rate control unit controls the supply amount of gas generated from raw materials such as Cuz (CzH+*Og), and 11 to 16 indicate temperature adjustment units that operate independently. In addition, A and B are the first values of gasification temperature T and T wealth (T I < T t), respectively.
．． A second raw material is shown.
次に動作について説明する。流量制御部９によって流量
制御されたキャリアガスは温度制御部１１でＴ−に温度
制御された第１の昇華槽１に入り、ここで中に入ってい
る第１の原料Ａのガス化成分を引きつれて温度制御部１
３によって７３（ＴＩ ＜Ｔ６）に温度調整された第１
導出管３に運びこまれ、さらに温度制御部１５によって
Ｔｓ（Ｔｓ ＜’ｒｓ）に温度調整されたガス混合部５
に達する。Next, the operation will be explained. The carrier gas whose flow rate is controlled by the flow rate controller 9 enters the first sublimation tank 1 whose temperature is controlled to T- by the temperature controller 11, where the gasified components of the first raw material A contained therein are removed. Temperature control section 1
The first temperature was adjusted to 73 (TI < T6) by 3.
The gas mixing section 5 is carried into the outlet pipe 3 and further temperature-controlled to Ts (Ts <'rs) by the temperature control section 15.
reach.
同じように、流量制御部１０によって流量調整されたキ
ャリアガスは温度制御部１２でＴ、（Ｔ。Similarly, the carrier gas whose flow rate is adjusted by the flow rate control unit 10 is supplied to the temperature control unit 12 at T, (T.
くＴ６）に調整された第２の昇華槽２でその中に入って
いる第２の原料Ｂのガス化成分を引きつれて温度制御部
１４でＴ、（Ｔ、≦Ｔ４≦Ｔｓ）に温度調整された第２
の導出管４を経てガス混合部５に達する。The gasified component of the second raw material B contained in the second sublimation tank 2 is drawn into the second sublimation tank 2 adjusted to T6), and the temperature is adjusted to T, (T, ≦T4≦Ts) by the temperature control unit 14. adjusted second
The gas reaches the gas mixing section 5 through the outlet pipe 4.
ガス混合部５に達した２つのガスはここで混合されて、
温度制御部１６でＴ ＆ （Ｔ ｓ≦Ｔ＆）に温度調整
されたガス輸送系６を経て反応室７に送られ、反応室で
シリコンウェハ、ＭｇＯ，ＹｓＺ等の基板７ａ上に所定
の混合物膜を形成した後、残さガスが排気系８を経て排
ガス処理設備に送られる。The two gases that have reached the gas mixing section 5 are mixed here,
The gas is sent to the reaction chamber 7 through the gas transport system 6 whose temperature is adjusted to T&(Ts≦T&) by the temperature control unit 16, and a predetermined mixture film is formed on a substrate 7a such as a silicon wafer, MgO, YsZ, etc. in the reaction chamber. After forming, the residual gas is sent to the exhaust gas treatment equipment via the exhaust system 8.
このように、ガス化温度の高い（Ｔ６）原料Ｂが通ると
ころの第２導出管４．ガス混合部５．ガス輸送系６の温
度はそれぞれＴ、、Ｔ％、Ｔ、とＴ２以上の温度に調整
できるので、途中で析出したりすることはない。又、ガ
ス化温度の低い（Ｔ６）原料Ａは高い温度（Ｔ６）に調
整されたガス混合部５に行く前にＴ、とＴ、との間の温
度（Ｔ６）に調整できる第１導出管３を通るので、Ｔ、
とＴ、との温度差が大きくても安定な温度分布を形成で
きる。In this way, the second outlet pipe 4 through which the raw material B having a high gasification temperature (T6) passes. Gas mixing section5. Since the temperature of the gas transport system 6 can be adjusted to T, T%, T, and T2 or higher, no precipitation occurs during the process. In addition, before the raw material A having a low gasification temperature (T6) goes to the gas mixing section 5 which is adjusted to a high temperature (T6), a first outlet pipe that can adjust the temperature (T6) between T and T is used. 3, so T,
Even if the temperature difference between T and T is large, a stable temperature distribution can be formed.
又、ガス混合部がそのガス混合を十分に行なうため、あ
るいは、いわゆるガスの捨てラインを持つガス選択機能
を有するために、熱容量が大きい物を使用していても、
ここを単独で温度調整しているので、温度調整不良等の
問題が発生する心配もない。In addition, in order for the gas mixing section to sufficiently mix the gases, or because it has a gas selection function with a so-called gas waste line, even if a material with a large heat capacity is used,
Since the temperature is adjusted independently here, there is no need to worry about problems such as poor temperature adjustment.
なお、上記実施例においては、２．つの昇華性原料を用
いているが、３つ以上の系においても同様な考えで実施
することができる。In addition, in the above embodiment, 2. Although three or more sublimable raw materials are used, the same idea can be applied to a system using three or more.
また、温度ブロックの構成は基本的なものだけを示して
おり、例えば途中の配管が複雑もしくは昇華槽とガス混
合部の温度差が大きくて、導出管部分を２分以上して制
御する必要があるような場合にはそれを妨げるものでは
ない。In addition, only the basic configuration of the temperature block is shown. For example, if the piping in the middle is complicated or the temperature difference between the sublimation tank and the gas mixing part is large, it may be necessary to control the outlet pipe part for more than 2 minutes. This does not preclude this in some cases.
また、例えば図中の導出管４と輸送系６とが熱容量がほ
ぼ等しく、かつ設定温度も同じ場合に、その温度制御部
のコントローラや検出部を兼用することを妨げるもので
はない。Further, for example, if the outlet pipe 4 and the transport system 6 in the figure have substantially the same heat capacity and the same set temperature, this does not preclude them from serving as a controller and a detection unit for the temperature control unit.
また、キャリアガスの流量調整でガス流量を制御せず、
昇華槽から出てきたガスを直接制御するような昇華槽と
導出管との間に流量制御部があるようなタイプでも、そ
れぞれの流量制御部を独立の温度制御ブロックと考えれ
ば、通用可能である。In addition, the gas flow rate is not controlled by adjusting the carrier gas flow rate,
Even a type in which there is a flow control section between the sublimation tank and the outlet pipe, which directly controls the gas coming out of the sublimation tank, can be used if each flow control section is considered as an independent temperature control block. be.
更に、ガス混合部が、反応ガスを反応室へ輸送する出口
と、反応ガスを排気系へ直接輸送する出口とを持ち、か
つそれぞれ引き出された原料ガスを混合して反応室へ輸
送したり、第１のガスのみを反応室へ輸送し、第２のガ
スは直接排気系へ輸送したりする選択機能を持つもので
構成することにより、反応中に混合状態を変え、性質の
異なった層状混合物も形成可能なように構成してもよい
ことは言うまでもない０、なお、この場合選択機能部は
熱容量が大きくなるので別途温度制御する必要がある。Furthermore, the gas mixing section has an outlet for transporting the reaction gas to the reaction chamber and an outlet for transporting the reaction gas directly to the exhaust system, and mixes the extracted raw material gases and transports them to the reaction chamber, By configuring a gas that has a selection function such as transporting only the first gas to the reaction chamber and transporting the second gas directly to the exhaust system, the mixing state can be changed during the reaction and a layered mixture with different properties can be produced. Needless to say, it may be configured such that it can also be formed.In this case, the selection function section has a large heat capacity, so it is necessary to separately control the temperature.
以上のように、この発明に係る混合物薄膜形成装置によ
れば、ガス供給系の温度制御を、ガスの経路に合わせて
ブロックに分け、それぞれ独立に温度制御が可能な構成
を採ったので、ガス化温度の違う２種類の原料を用いて
も、その供給系の途中で析出したりすることなく、安定
に混合ガスを供給できるようになり、その結果、反応室
において再現性良く、所望の混合薄膜ガスが形成できる
効果がある。As described above, according to the mixture thin film forming apparatus according to the present invention, the temperature control of the gas supply system is divided into blocks according to the gas path, and the temperature can be controlled independently for each block. Even if two types of raw materials with different heating temperatures are used, the mixed gas can be stably supplied without precipitation during the supply system, and as a result, the desired mixture can be achieved with good reproducibility in the reaction chamber. This has the effect of forming a thin film of gas.
図面はこの発明の一実施例による混合物薄膜形成装置を
示すブロック構成図である。
図において、１．２は昇華槽、３．４は導出管、５はガ
ス混合部、６は輸送系、７は反応室、８はガス輸送系、
９．１０はガス流量調整部、１１〜６は温度調整部であ
る。The drawing is a block diagram showing a mixture thin film forming apparatus according to an embodiment of the present invention. In the figure, 1.2 is a sublimation tank, 3.4 is an outlet pipe, 5 is a gas mixing section, 6 is a transport system, 7 is a reaction chamber, 8 is a gas transport system,
9.10 is a gas flow rate adjustment section, and 11 to 6 are temperature adjustment sections.
Claims (1)
第１昇華槽と、 温度制御（Ｔ＿２）された、第１の原料ガスを引き出す
第１導出管と、 上記第１昇華槽とは別個に温度制御（Ｔ＿３）された、
第２の原料を入れた第２昇華槽と、 上記第２昇華槽とは別個に温度制御（Ｔ＿４）された、
第２の原料ガスを引き出す第２導出管と、それぞれのガ
ス量を制御する第１、第２の流量制御部と、 それぞれ引き出された原料ガスを混合する、独立に温度
制御（Ｔ＿５）されたガス混合部を有するガス供給系と
、 混合されたガスが析出することのないように独立に温度
制御（Ｔ＿６）されたガス輸送系と、輸送されてきたガ
スから薄膜を堆積させる反応室および排気系とを備え、 Ｔ＿１＜Ｔ＿２≦Ｔ＿４≦Ｔ＿５≦Ｔ＿６かつＴ＿１＜
Ｔ＿３＜Ｔ＿５≦Ｔ＿６を満足するように温度制御状態
が設定されていることを特徴とする混合物薄膜形成装置
。(1) A temperature-controlled (T_1) first sublimation tank containing a first raw material; a temperature-controlled (T_2) first outlet pipe for drawing out the first raw material gas; and the first sublimation tank. The temperature was controlled (T_3) separately from the
A second sublimation tank containing a second raw material, and a temperature controlled (T_4) separately from the second sublimation tank,
A second outlet pipe that draws out the second raw material gas, a first and second flow rate control section that controls the amount of each gas, and an independently temperature-controlled (T_5) system that mixes the extracted raw material gases. A gas supply system with a gas mixing section, a gas transport system whose temperature is independently controlled (T_6) so that the mixed gas does not precipitate, and a reaction chamber and exhaust where a thin film is deposited from the transported gas. system, T_1<T_2≦T_4≦T_5≦T_6 and T_1<
A mixture thin film forming apparatus characterized in that a temperature control state is set to satisfy T_3<T_5≦T_6.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1071293A JP2773893B2 (en) | 1989-03-22 | 1989-03-22 | Mixture thin film forming equipment |
| US07/801,627 US5186120A (en) | 1989-03-22 | 1991-12-04 | Mixture thin film forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1071293A JP2773893B2 (en) | 1989-03-22 | 1989-03-22 | Mixture thin film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02250977A true JPH02250977A (en) | 1990-10-08 |
| JP2773893B2 JP2773893B2 (en) | 1998-07-09 |
Family
ID=13456490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1071293A Expired - Lifetime JP2773893B2 (en) | 1989-03-22 | 1989-03-22 | Mixture thin film forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2773893B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5480488A (en) * | 1992-10-28 | 1996-01-02 | Schott Glaswerke | Apparatus for supplying CVD coating devices |
| DE10005820C1 (en) * | 2000-02-10 | 2001-08-02 | Schott Glas | Gas supply device for precursors of low vapor pressure |
| JP2008502135A (en) * | 2004-06-04 | 2008-01-24 | 東京エレクトロン株式会社 | Process processing system and method for processing substrates |
-
1989
- 1989-03-22 JP JP1071293A patent/JP2773893B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5480488A (en) * | 1992-10-28 | 1996-01-02 | Schott Glaswerke | Apparatus for supplying CVD coating devices |
| DE10005820C1 (en) * | 2000-02-10 | 2001-08-02 | Schott Glas | Gas supply device for precursors of low vapor pressure |
| JP2003527481A (en) * | 2000-02-10 | 2003-09-16 | カール ツァイス シュティフトゥング | Gas supply system for precursors with low vapor pressure |
| US7413767B2 (en) | 2000-02-10 | 2008-08-19 | Schott Ag | Gas supply method in a CVD coating system for precursors with a low vapor pressure |
| JP4772246B2 (en) * | 2000-02-10 | 2011-09-14 | ショット アクチエンゲゼルシャフト | Gas supply device for precursors with low vapor pressure |
| JP2008502135A (en) * | 2004-06-04 | 2008-01-24 | 東京エレクトロン株式会社 | Process processing system and method for processing substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2773893B2 (en) | 1998-07-09 |
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