JPH02250570A - Recording/reproducing device for charge latent image - Google Patents

Abstract

PURPOSE:To obtain the reproduced pictures with high picture quality and high image resolution by deciding the level of a signal produced by reading out a charge latent image corresponding to the electromagnetic radiation information based on the reference signal level. CONSTITUTION:A light/charge conversion part consists of a transparent electrode Et, an electrode E, a photoconductive layer member PCL, a charge holding layer member CML, a switch SW, a power supply Vs, etc. The optical information is recorded to the member CML of the light-charge conversion part in the form of a charge latent image. Then this recorded latent image is read out by a charge latent image reading means having high image resolution via a charge latent image reading part. Then the level of the signal produced by reading out the charge latent image corresponding to the electromagnetic radiation information is decided based on the reference signal level. Thus it is possible to obtain the reproduced pictures with high picture quality and high image resolution.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a charge latent image recording and reproducing device having high resolution.

(Prior art) A video signal obtained by latent optical image of a subject using an imaging device is a record that is easy to edit, trim, and perform other image signal processing, and has reversibility that allows erasing of green signals. Although it has the characteristic that recording and reproduction can be easily performed using components, the image VR@, which has been commonly used to generate video signals, is The optical image of the subject formed on the charging conversion unit is converted into electrical image information corresponding to the optical image of the subject by the photoelectric conversion unit of the image sensor, and the electrical image information is serially transmitted on the time axis. It is well known that various m-detonators and various solid-state image sensors have been used as the above-mentioned i-image elements in the structure of imaging devices. It is as follows.

Now, as is well known, in recent years, as the demand for high-quality and high-resolution playback images has increased, new television systems such as so-called EDTV and HDTV have been proposed. be.

By the way, in order to obtain high-quality, high-resolution reproduced images, an imaging device that can generate video signals that can reproduce high-quality, high-resolution reproduced images is considered an expense. In an imaging device that uses an image pickup tube as an image pickup element, there is a limit to miniaturization of the electron beam diameter in the 11L latent image tube, so high resolution cannot be expected by miniaturization of the electron beam diameter; Since the target capacity of the image pickup tube increases in proportion to the target area, it is impossible to achieve higher resolution by increasing the target area. Due to these reasons, the frequency band of the video signal increases from several tens of Mllz to several hundred M latent image Z or more, which poses a problem in terms of S/N. It is difficult to generate a video signal that can reproduce a reproduced image.

The above point will be specifically explained as follows. In other words, in order to generate a video signal that can reproduce high-quality, high-resolution images with an imaging device that uses an MLL detonator as an AM element, it is necessary to miniaturize the diameter of the electron beam in the imaging tube and to use the target as a target. It is conceivable to use one with a large area, but there is a limit to miniaturizing the electron beam diameter of the m detonator due to the performance of the Il image tube electron gun and the structure of the focusing system. There is a limit to increasing resolution through miniaturization, and if you try to obtain high resolution by increasing the target area by using an Il image lens with a large captured image size, it will be difficult to increase the resolution by increasing the target area. Due to the decrease in high-frequency signal components in the output signal of the image pickup tube due to the increase in the number of targets for the image pickup tube, the S/N of the image pickup tube output signal decreases significantly. It is not possible to generate a good video signal that can reproduce a high-quality, high-resolution reproduced image.

In addition, in order to reproduce high-quality, high-resolution images using an image carrier using a solid-state MS element as an image sensor, it is necessary to use a solid-state latent image element with a large number of pixels. As the number of solid-state image sensors increases, the frequency of the clock for driving them increases (for example, in the case of a video camera, the clock frequency for driving the solid-state image sensor is several hundred MH2), and the frequency of the clock for driving the solid-state image sensor becomes high. Since the capacitance value of the target circuit is increasing due to the increase in the number of pixels, such solid-state imaging devices are difficult to use considering the current situation where the clock frequency limit of solid-state imaging devices is said to be 20MH2. It is considered that it cannot be constructed as something practical.

As described above, the configuration of conventional imaging devices makes it difficult for the imaging elements used to generate good video signals that can reproduce high-quality, high-resolution images. It has not been possible to easily provide an imaging WAN that can generate video signals that can reproduce high-quality and high-resolution reproduced images.

In addition, the image sensor used in conventional imaging devices generates a new optical image of the subject after the electrical signal generated by photoelectric conversion of the optical information to be recorded is sent out as a video signal. Since the imaging device itself does not have a function to store electrical signals generated in correspondence with successive subject images, conventional When it is necessary to store electrical information signals obtained by imaging, the video signals generated by the imaging device are recorded using, for example, a magnetic recording device. However, since it is beneficial in various ways to record the captured content, it has been long awaited for the appearance of an imaging device that has a storage function within itself.

As an imaging device capable of solving the above-mentioned problems, the present applicant company has developed an imaging device that includes at least a photoconductive layer member and a charge retention layer member disposed between two electrodes to which a predetermined voltage is applied. means for forming an optical image of a subject on the photoconductive layer member using an image carrying lens to form a charge latent image corresponding to the optical image of the subject on the charge retention layer member;
An MS device has been proposed which includes means for reading out a latent charge image corresponding to an optical image of a subject from the above-mentioned charge@image forming portion of the charge retention layer member to generate a video signal.

In FIG. 1, Et is a transparent electrode, E is an electrode, PCL is a light guide ms member, CML&; is a charge retention layer member, and 3 is a power source, and each of the above-mentioned components constitutes a light-charge converter. A predetermined electric field is generated between the transparent electrode Et and the electrode E by the power supply VS connected between the transparent electrode IHt and the electrode E.

The aforementioned components are housed in a suitably constructed dark box to prevent unnecessary external light from hitting the light guide 1ft1 member PCL.

The above-mentioned transparent electrode Et is configured as a transparent electrode (for example, ITO) having spectral transmission characteristics such that light in the wavelength band of optical information to be imaged is transmitted, and the above-mentioned When a high-definition optical image is given to one end face of the photoconductive layer member PCL,
A photoconductor material (for example, an amorphous
silicone) is used, and in addition,
As the charge retention layer member CML, one made of a material (for example, silicone resin) having a high insulation resistance value that allows the formed charge latent image to remain in the same pattern for a long period of time is used. Ru.

The charge retention layer member CML described above can have any shape, such as a disc, tape, or sheet shape, and in any case, the charge retention layer member CML described above is It may also be configured to be transferred in a predetermined transfer mode.

The light beam incident on the transparent electrode Et side of the light-to-charge converter through the image carrying lens L is transmitted to the transparent electrode Et in the light-to-charge converter.
When the photoconductive layer member PCL passes through the photoconductive layer member PCL and enters the photoconductive layer member PCL, the electrical resistance value of the photoconductive layer member PCL changes depending on the amount of light flux incident thereon. The state changes depending on the amount of light in each part.

Then, the transparent electrode Et and the electrode E in the light-charge conversion section
In the darkness, as mentioned above, ff1l is connected via switch SW.
Since a predetermined voltage is applied by Vs, the charge retention layer member CML, which is provided so as to face the above-mentioned optical i-conductor layer member PCL, has a state of change in the electrical resistance value in the light guide 111 member PCL. A charge corresponding to the optical image of the object is generated, and a charge latent image corresponding to the optical image of the object is formed on the charge retention layer member CML.

FIG. 3 shows the charge retention layer member CM caused by a latent charge image generated on the charge retention layer member CML in response to changes in the exposure amount given to the light-charge conversion unit, that is, (surface illuminance x irradiation time).
It is a curve diagram showing how the surface potential of L changes, and a fog voltage exists in the charge retention layer member CML regardless of the exposure amount.

Complete latent charge images formed one by one on the charge retention layer member CML as described above are transferred to the photoconductive layer member PCL.
A photoconductive layer member PC having a charge amount corresponding to the amount of light in each part of the optical information to be recorded given to the photoconductive layer member PC, the charge latent image having a sufficiently high resolution.
Since the charge retention layer member CML has a high definition corresponding to L, the charge retention layer member CML, on which a charge latent image corresponding to the optical image of the subject is formed, as illustrated in FIG. By moving the portion where the latent charge image is formed in the holding layer member CML to the charge latent image readout section, and reading out the latent charge image by a charge latent image reading means having high resolution at the charge latent image readout section, extremely high definition images can be obtained. It is possible to generate a video signal that can reproduce a reproduced image.

(WRll to be solved by the invention) By the way, there is no optical black in the video signal 5 corresponding to the charge latent image read out from the charge retention layer member CML by the charge latent image reading means having high resolution. Therefore, for example, even if the video signal is displayed on a monitor receiver, only an image with a small contrast ratio will be obtained.

This point will be explained with reference to FIGS. 8 to 12 as follows. FIGS. 11 and 12 illustrate an example of a configuration arrangement in which light showing a change in light amount corresponding to the amount of charge of a latent charge image in the charge retention layer member CML on which a latent charge image is formed can be generated. In FIGS. 11 and 12, P4 is a laser beam, 10 is a polarizer, 11 is an analyzer, 12 is a wavelength plate, and 13 is a light modulating material (for example, the state of light is changed by an applied voltage). 14 in FIG. 12 is a beam splitter.

The 11th WJ is a configuration example in which light showing a change in the amount of light corresponding to the amount of charge of the charge latent image in the charge retention layer member CML is obtained as transmitted light of the charge retention layer member CML. The figure shows, for example, the eighth point where light indicating a change in the amount of light corresponding to the amount of charge of the charge latent image on the charge retention layer member CMm is arranged close to the charge retention layer member CML.
This is an example of a configuration in which light is obtained as reflected light from a reading element having a configuration as illustrated in the figure.
In the reading element 13 shown in FIG. 8, Etr is a transparent electrode, PML is a light modulating material layer (for example, lithium niobate single crystal), and DM is a dielectric mirror.

Now, the light modulating material latent image (for example, lithium niobate single crystal) in the reading element 13, which is configured to include the light modulating material latent image (for example, lithium niobate single crystal), has a charge retention layer member CML. Since the electric field Vl due to the latent image is applied, the light passing through the light modulating material layer (for example, lithium niobate single crystal) of the reading element 13 is transmitted through the light modulating material layer (for example, lithium niobate single crystal). The plane of polarization changes due to the primary electro-optic effect generated in the light modulating material M (for example, lithium niobate single crystal) in response to the electric field applied to the polarizer. 10, the polarization plane of the laser beam emitted from the reading element 13 is equal to the charge I! of the charge retention layer member CML with respect to the light modulating material layer (for example, lithium niobate single crystal) in the reading element 13. It changes depending on the magnitude of the electric field V- applied from the image.

Therefore, by passing the laser light emitted from the reading element 13 through the analyzer 11, the intensity of the emitted light from the analyzer 11 (the amount of light ■ in FIGS. 9 to 12) can be adjusted to reduce the charge potential of the charge retention layer member CML. Since it corresponds to the amount of charge of the image, the charge latent image of this charge retention layer member CML! ? il
A video signal corresponding to the charge latent image of the charge retention layer member CML is obtained by photoelectrically converting the light whose light amount changes in accordance with the amount i.

By the way, the relationship between the applied voltage V- of the light modulating material layer (for example, lithium niobate single crystal) and the primary electro-optic effect in the reading element 13 is as follows: Applied voltage V- and light modulating material I
FIG. 9 shows an example of the light quantity I of the light that has passed through a lithium niobate single crystal (for example, a lithium niobate single crystal) and the light that has passed through an analyzer.

Further, FIG. 10 shows the light modulating material Im in the reading element 13.
This is an example of the relationship between the optical latent image of light outputted from a reading element configured using liquid crystal and passed through an analyzer, and the voltage (-) applied to the liquid crystal.

In FIGS. 9 and 10, the waveforms whose time axes are shown in the vertical direction in the figures show the changing waveforms of the voltage applied to the light modulating material layer due to the charge latent image, and the waveforms shown in FIGS. and 10th
The waveform whose time axis is shown in the horizontal direction in the figure shows the output light from the analyzer in which the light layer changes in response to changes in the voltage applied to the light modulating material layer due to the charge latent image. There is.

As can be seen from FIG. 9 and FIG. 10, the light whose amount of light changes in accordance with the amount of charge of the charge latent image of the charge retention layer member CML is such that the black level of the charge latent image is optically Since the black level of the information is not high enough, even if the video signal obtained by photoelectrically converting this light is displayed on a monitor receiver, only an image with a small contrast ratio will be obtained.

Furthermore, the gap (
The optical information to be recorded that is given to the photoconductive layer member PCL in a state where the gap (gap) is not uniform is transferred to the charge retention layer member CML.
When the &:ffi charge latent image is formed, shading, contrast error, etc. occur in the charge latent image formed on the charge retention layer member CML.

Further, in a state where the gap (fil gap) between the charge retention layer member CML on which the charge latent image is formed and the reading element 13 in FIG. β, FIG. 11, and FIG. 12 is not uniform, the charge retention layer member CML When reading a charge latent image, variations such as shading occur in the video signal obtained corresponding to the charge latent image read by the reading element 13.

(@Means for solving the point of view) The present invention provides the following charge latent image recording and reproducing device.

(1) Input electromagnetic radiation information to be recorded into at least a photoconductive layer member and a charge retention layer member disposed between two electrodes to which a predetermined voltage is applied. means for forming a charge latent image on a charge retention layer member that corresponds to input electromagnetic radiation information; and a means for forming a charge latent image on a charge retention layer member that corresponds to the electromagnetic radiation tJ411I information from a portion of the charge retention layer member where the charge latent image is formed. In a charge latent image recording/reproducing device comprising means for reading the charge latent image by a reading member disposed close to the charge retention layer member to generate a signal, the charge latent image corresponding to the electromagnetic radiation information is A charge latent image recording/reproducing device in which the level of a signal generated by reading out a signal is set based on the level of a reference signal.

(2) Inputting electromagnetic radiation information to be recorded into at least a photoconductive layer member and a charge retention layer member disposed between two electrodes to which a predetermined voltage is applied; means for forming a charge latent image on a charge retention layer member corresponding to the electromagnetic radiation information; In a charge latent image recording/reproducing apparatus comprising means for reading out an image by a reading member disposed close to the charge retention layer member to generate a video signal, a reference is made to at least one side of the recording area of the charge retention layer member. A charge latent image forming area is set as a reference, and the level of the signal generated by reading out the charge latent image corresponding to the electromagnetic radiation information is set as the reference level of the charge latent image forming area. A charge latent image recording and reproducing device configured to set the level of information obtained by reading out a charge 'a image.

(2) In the charge latent image recording and reproducing apparatus described above, the electromagnetic latent image m! is determined by the reference signal level or information level. A charge latent image recording and reproducing device that adjusts the level of a signal generated by reading a charge latent image corresponding to information.

(4) In the electric TrJii image recording and reproducing device described above, the electric charge i is determined by the reference signal level or information level.
A charge latent image recording and reproducing device in which the relative position of an i* reading member and a charge retention layer member is controlled.

(2) A charge latent image recording and reproducing apparatus as described above, in which a charge latent image for obtaining a reference signal level or information level is read out during the blanking period of a video signal.

■ The reference signal level or information level in the above charge latent image recording/reproducing device is the formation part of the charge latent image corresponding to a specific single level or a combination of two or more levels of electromagnetic radiation information. Charge latent image recording and reproduction V@隨, which is obtained by reading out the charge latent image.

■ The reference signal level or information level in the charge ms recording/reproducing device described above is the charge obtained by reading out the charge latent image of the charge latent image forming portion corresponding to the average level of electromagnetic radiation information. Latent image recording and reproduction i.

(Example) Hereinafter, specific contents of the charge latent image recording and reproducing apparatus of the present invention will be explained in detail with reference to the accompanying drawings.

The electroluminescent latent image I recording and reproducing device of the present invention stores optical information in optical form.
After the charge latent image is recorded on the charge retention layer member CML in the charge conversion section, the charge latent image recorded on the charge retention layer member CML is transferred to a charge latent image reading section with a charge latent image reading means having high resolution. The light-to-charge converter is constructed so that it can generate a video signal that can reproduce an extremely high-definition reproduced image by reading it out. A configuration like this can be used.

As already mentioned, the photo-charge converter shown in FIG. 1 is composed of the following components: the transparent electrode EtSIf electrode E1, the photoconductive layer member PCL, the charge retention layer member CML, and the switch SW1 and IVs. A power supply V is connected to the transparent electrode Et and the electrode Etll via a switch SW.
A predetermined electric field is generated between the above-mentioned transparent electrode Et and the electrode E by S, and the above-mentioned components are housed in a suitably constructed dark box, and the light guide 'R layer member PCL is protected from unnecessary external light.

The transparent electrode 2t described above is a transparent electrode (for example, ITO) having a spectral transmission characteristic that allows light in a wavelength band of optical information to be recorded as an image to be transmitted. When a high-definition optical image is given to one end face of the conductive layer member PCL, a high-definition optical image is applied to the other end face under the application of an electric field of appropriate strength.
A photoconductor material (e.g., amorphous silicon) having properties capable of generating a charge latent image is used, and the charge retention layer member CML described above may be It is possible to use a material made of a material (eg, silicone resin) having a high insulation resistance value such that the latent charge image formed remains in the same pattern for a long period of time.

The charge retention layer member CML described above can have any shape, such as a disc, tape, or sheet. In any case, the charge retention layer member CML described above may It may also be possible to transfer the information in a specific transfer mode.

The light flux that has entered the transparent electrode Et side of the light-charge converter through the imaging lens L is transferred to the transparent electrode Et in the light-charge converter.
When light S passes through the photoconductive layer member PCL and enters the photoconductive layer member PCL, the electrical resistance value of the photoconductive layer member PCL changes depending on the amount of light flux incident thereon, so the electrical resistance value of each part of the photoconductive layer member PCL changes depending on the subject The state changes depending on the amount of light in each part of the screen.

Then, the transparent electrode Et and the electrode E in the light-charge conversion section
As mentioned above, there is a power supply VS via the switch SW.
Since a predetermined voltage is applied to the charge retention layer member CML, which is provided so as to face the photoconductive layer member PCL, there is a voltage that corresponds to the state of change in the electrical resistance value in the photoconductive layer member PCL. As a result, a latent charge image corresponding to the optical image of the object is formed on the charge retention layer member CML.

FIG. 2 shows an example of the charge retention layer member CML in which a charge latent image corresponding to the optical image of the object is formed as described above, while FIG. Adjacent to the recording area 1 where the charge latent image is formed, -
This is an example of a charge retention layer member CML in which charge latent image formation portions 2 corresponding to optical black on the sides are set.

Then, the charge retention layer member CM illustrated in FIG.
A charge ms corresponding to optical black is formed in the charge latent image forming portion 2 corresponding to optical black set to L.

As a means for forming a charge latent image corresponding to optical black in the charge latent image forming portion 2 corresponding to optical black set in the charge retention layer member CML, for example, when imaging the subject 0, the above-mentioned method is used. A light shielding pattern is provided on the photoconductive layer member PC to prevent light from being irradiated onto the charge latent image formation portion 2 corresponding to the optical black in the charge retention layer member CML.
For example, an electrode may be provided in the optical path up to L, or, for example, an electrode may be provided for applying a constant potential corresponding to optical black to the charge latent image forming portion 2 corresponding to optical black in the charge retention layer member CML. Measures can be taken to do so.

The charge latent image of the charge latent image forming portion 2 corresponding to the optical black described above is read out during the blanking period of the video signal as described later, and is used as a reference for setting the black level of the video signal. It is used.

Each complete latent charge image sequentially formed on the surface of the charge retention layer member CML as described above is determined by the amount of light at each part of the optical information to be recorded that is given to the photoconductive layer member PCL. The charge latent image has a charge amount corresponding to that of the photoconductive layer member PCL, and the charge latent image has a high definition corresponding to that of the photoconductive layer member PCL having a sufficiently high resolution. As illustrated in FIG. 4, the charge retention layer member CML on which the charge latent image corresponding to the optical image of the subject is formed is read out from the charge retention layer member CML where the charge latent image is formed. By moving the charge latent image to the end of the charge latent image reading section and reading it out by a charge latent image reading means having high resolution at the charge latent image reading section, it is possible to generate a video signal that can reproduce a reproduced image with extremely high definition.

Charge retention layer member C shown in FIG. 2 or FIG. 4
The charge latent image readout operation performed in the charge latent image readout section after moving the charge latent image formation portion in the ML to the charge latent image readout section is as described above with reference to FIGS. 11 and 12, for example. This can be done by using a reading unit having the configuration as described above.

Pj is a laser beam in FIGS. 11 and 12, which has a configuration such that light showing a change in the amount of light corresponding to the amount of charge of the latent charge image in the charge retention layer member CML on which the latent charge image is formed is obtained. , 10 is a polarizer, 11 is an analyzer, 12
13 is a wavelength plate, and 13 is an optical 2*a material (for example, a single crystal of niobium oxide, which has an electro-optical effect, which exhibits the property of changing the state of light depending on the applied voltage, or a nematic material, which exhibits an electric field scattering effect. The reading elements each include a liquid crystal (liquid crystal). In addition, the 12th
14 in the figure is a beam splitter.

FIG. 11 shows that light showing a change in the amount of light corresponding to the amount of charge of the latent charge image in the charge retention layer member CML is shown in FIG.
FIG. 12 shows a configuration example in which the light is obtained as transmitted light of the charge retention layer member CML, and FIG. This is an example of a configuration in which the light is obtained as reflected light from a reading element having a configuration as illustrated in FIG. 8, which is arranged close to the reading element 13 shown in FIG. Etr is a transparent electrode,
PML is a light modulating material layer (for example, lithium niobate single crystal), and DM is a dielectric mirror.

Now, the light modulating material layer (for example, lithium niobate single crystal) in the reading element 13 that includes the light modulating material latent image (for example, lithium niobate single crystal) has a charge latent image of the charge retention layer member CML. Since the electric field Vl due to the image is applied, the light passing through the light modulating material latent image (for example, lithium niobate single crystal) of the reading element 13 is transmitted through the light modulating material layer (for example, lithium niobate single crystal) described above. The plane of polarization changes due to the primary electro-optic effect generated in the light modulating material layer (for example, lithium niobate single crystal) in response to the electric field applied to the light modulating material layer (for example, lithium niobate single crystal).

Therefore, if the laser beam PJ incident on the reading element 13 is made linearly polarized by the polarizing element 10, the reading element 1
The polarization plane of the laser beam emitted from the reading element 13 depends on the magnitude of the electric field v11 applied from the charge latent image of the charge retention layer member CML to the light modulating material R (for example, lithium niobate single crystal) in the reading element 13. It will change accordingly.

Then, by passing the laser light emitted from the reading element 13 through the analyzer 11, the intensity of the emitted light from the analyzer 11 (the amount of light l in FIGS. 9 to 12) is determined by the charge potential of the charge retention layer member CML. Since the amount of charge corresponds to the charge amount of the image, by photoelectrically converting the light whose amount of light changes in correspondence with the amount of charge of the charge latent image of the charge retention layer member CML, the charge retention layer member CML is A video signal corresponding to the charge latent image is obtained.

The applied voltage V- of the light modulating material layer in the case where the light modulating material layer in the reading element 13 is a lithium niobate single crystal, and the optical latent image of the light that has passed through the light modulating material layer and further passed through the analyzer. The relationship is as exemplified in FIG. 9, and when the light modulating material layer in the reading element 13 is liquid crystal, the applied voltage v- of the light modulating material layer and the light passing through the light modulating material layer are The relationship between the light that has passed through the analyzer and the light fit is as illustrated in Figure 10, so
As mentioned above, the black level of the latent charge image does not correspond to the black level of optical information in the case of light whose light intensity changes in accordance with the amount of charge of the latent charge image of the charge retention layer member CML. Therefore, even if the video signal obtained by photoelectric conversion of the light is displayed on a monitor receiver, only an image with a small contrast ratio can be obtained.

Therefore, in the charge latent image recording and reproducing apparatus of the present invention, the amount of light is adjusted in accordance with the amount of charge of the charge latent image of the electric retention layer member CML in the reading section having the configuration described with reference to FIGS. After generating changing light, the light is photoelectrically converted into a video signal S1 corresponding to [1 image of the charge retention layer member CML, and then the black level of the video signal $1 is changed. , the signal level of the video signal generated by reading out the charge latent image corresponding to the black part in the optical image of the subject is set as a reference, or the fourth
The charge latent image of the charge latent image forming portion 2 corresponding to the optical black set on at least one side of the recording area 1 of the charge retaining member 11 as shown by the drawing reference numeral 2 in the figure is reflected in the video signal. The black level of the video signal S1 is set based on the information read out during the line erasing period.

6 and 7 are block diagrams showing configuration examples of a black level setting circuit for the video signal S1. First, in the circuit arrangement illustrated in FIG. 9, the black level in the video signal S1 is supplied to the clamp circuit 9 and the signal generating circuit (
The configuration is such that the voltage is set to Vc by the clamp pulse P3 supplied from SG)8. Note that the signal SC sent out from the signal generation circuit (SG) 8
7 shows timing signals, opening signals, etc. used in other components of the imaging device, and the same applies to FIG.

Furthermore, in the circuit arrangement illustrated in FIG.
The sample hold circuit (S/H) 7 controls the blanking period in the video signal S1 by the sampling pulse P1 sent from the signal generation circuit (SG) 8. The signal level corresponds to the optical black existing in the area, that is, the optical black set on at least one side of the recording area 1 of the charge retention layer member indicated by the drawing reference numeral 2 in FIG. A signal resulting from the charge latent image of the charge latent image forming section 2 is read out during the blanking period, held, and supplied as a signal P2 to the black level generation circuit 6, and from the black level generation circuit 6 to the subtraction circuit 4. Supplied as a subtraction signal.

Since the video signal S1 is supplied as the minuend signal to the subtraction circuit 4, the black level of the video signal $1 is supplied from the subtraction circuit 4 and is indicated by the reference numeral 2 in FIG. The signal is set based on the signal based on the charge latent image of the charge latent image forming portion 2 corresponding to the optical black set on at least one side of the recording area 1 of the charge retention layer member.

The above operation can be easily understood by referring to the waveform diagram of each signal shown in FIG.

The output video signal sent to the output terminal 5 from the circuit arrangement shown in FIGS. 6 and 7, respectively, has a black level set corresponding to optical black, and It is clear that if the signal is supplied to a monitor receiver, a reproduced image with a large contrast ratio can be displayed on a display.

Note that, as described above, the present invention is not limited to setting the black level of a video signal based on a signal from a charge latent image formed in a charge latent image formation area corresponding to optical black; The white level of the video signal may be set based on the signal generated by the charge latent image of the corresponding charge latent image forming portion.

In this case, the charge retention layer member C illustrated in FIG.
A charge latent image corresponding to optical white is formed in advance at the same position as the formation portion 2 of the charge latent image corresponding to optical black set in ML.

A charge latent image corresponding to the optical white set on the charge retention layer member CML is formed in the forming part (the forming part at the same position as the charge corresponding to the optical black @ image forming part 2), and the optical white is For example, as a means for forming a charge latent image corresponding to the subject 0,
am, white light from a separately provided white light light source is irradiated onto the position of the formation portion of the charge latent image corresponding to the optical white set on the charge retention layer member CML. Alternatively, for example, an electrode for applying a constant potential corresponding to optical white may be provided at the position of the portion where a charge latent image corresponding to optical white set on the charge retention layer member CML is formed. Measures can be taken to do so.

In addition, the charge latent image in the formation part of the charge latent image used to obtain the reference signal may be a single color other than optical black or white, a color that is a combination of two or more colors including black or white, or the average of the subject. It may be formed in correspondence with a specific color among the colors.

In this case, the means for forming a latent charge image corresponding to a specific color may be the same as the means for forming a latent charge image corresponding to white, or the means for forming a latent charge image corresponding to each color may be used as appropriate. All you have to do is combine them.

Then, the charge latent image of the charge latent image forming part for obtaining the reference signal mentioned above is read out during the blanking period of the video signal, and it is determined that the charge latent image is of the same color as the above-described specific color of the video signal. It is used as a standard for setting levels.

Gap (fit gap) between photoconductive layer member PCL and charge retention layer member CML forming a charge latent image in FIG.
When optical information to be recorded that is applied to the photoconductive layer member PCL is formed as a charge latent image on the charge retention layer member CML in a state where the charge retention layer member CML is not uniform, the charge latent image formed on the charge retention layer member CML As mentioned above, shading, contrast errors, etc. occur in the image.

Therefore, in the charge latent image recording and reproducing apparatus of the present invention, in the reading section having the configuration described with reference to FIGS. 11 and 12, the light m is After generating light that is changing, the light is photoelectrically converted into a video signal S1 corresponding to the charge latent image of the charge retention layer member CML, and then the level of the video signal S1 is changed to The black part in the optical image of (
Alternatively, the signal level of the video signal generated by reading out the charge M image corresponding to the white or other specific color portion may be read out, or the signal level may be adjusted based on the signal level of the generated video signal. A charge latent image forming portion 2 corresponding to optical black (or white or other specific color) set on at least one side of the recording area 1 of the charge retention layer member
The information obtained by reading out the charge latent image during the blanking period of the video signal! ! As a standard, the level of the video signal S1 is adjusted.

131st! 1 is a block diagram showing a configuration example of a circuit for adjusting the level of the video signal S1.

In the circuit arrangement illustrated in the figure, the video signal S1 described above is supplied to the automatic gain control circuit (AGC circuit) 15 and the sample hold circuit (S/H) 7, but the sample hold circuit (S/H) 7 is supplied with the video signal S1 described above. S/H) 7 is the sampling pulse P1 sent out from the signal generation circuit (SG) 8.
, the signal level corresponding to the optical black, white, or other specific color present during the nullification period in the video signal S1, that is, the signal level corresponding to the optical black, white, or other specific color present during the nullification period in the video signal S1, that is, the signal level corresponding to the signal level 2 in FIG. During the blanking period, a signal is generated by a charge latent image in the charge latent image forming portion 2 corresponding to optical black (or white or other specific color) set on at least one side of the recording area 1 of the charge retention layer member. It is read out, held, and supplied as a signal P2 to the AGC circuit 15 as a control signal.

The above-mentioned AGC circuit 15 receives the video signal S1 with a gain of 1.
Since it is supplied as the i latent image IXl signal, the level of the above-mentioned video signal S1 from the AGC circuit 15 is at least on one side in the recording area 1 of the charge retention layer member indicated by reference numeral 2 in FIG. The adjustment is made based on the signal generated by the charge latent image of the charge latent image forming section 2 corresponding to the optical black (or white or other specific color) set in .

The output video signal sent to the output terminal 5 from the circuit arrangement shown in FIG. It is clear that a reproduced image with suppressed shading and contrast errors can be displayed on a display.

The charge retention layer member CM in a state where the gap between the charge retention layer member CML on which the latent charge image is formed and the reading element 13 in FIGS.
As described above, when reading the charge latent image in L, variations such as shading occur in the video signal obtained corresponding to the charge latent image read by the reading element 13.

Therefore, in the charge latent image recording and reproducing apparatus of the present invention, in the reading section having the configuration described with reference to FIGS. 11 and 12, the charge retention layer member CML of the reading element 13 constituting the reading section is What is the relative position interval of the charge corresponding to the black part (or white or other specific color part) in the optical image of the object? Control may be based on the signal level of a video signal generated by reading out one image, or at least one side of the recording area 1 of the charge retention layer member as indicated by reference numeral 2 in FIG. The reading section is set based on the information obtained by reading out the charge latent image of the charge latent image forming section 2 corresponding to the set optical black (or white or other specific color) to the video signal blanking 1lIWA. i! of the reading elements 13 that constitute it! The relative positional interval with the load holding layer member CML is set to 111 tm.

FIG. 14 is a block diagram showing an example of the configuration of the reading element 130th @l1ltI11 circuit constituting the reading section.

In the circuit arrangement illustrated in the figure, the video signal S1 obtained from the reading section 16 is supplied to the output terminal 5 and the sample and hold circuit (S/H) 7. )7 corresponds to the optical black, white, or other specific color that exists during the blanking period in the video signal S1 by the sampling pulse P1 sent from the signal generation circuit (SG) 8. The signal level 7 indicated by the drawing number 2 in FIG.
(4) Optical black, white, or other specific color set on at least one side of the recording area 1 of the load-retaining layer member)
A signal resulting from the charge latent image of the charge latent image forming portion 2 corresponding to the charge latent image is read out during the blanking period and held, and a signal P2 is generated.
The signal is supplied to the control signal generation circuit 17 as a control signal, and the control signal generation circuit 17 supplies it to the position ti control mechanism 18 as a control signal.

The above-mentioned 11 & 1 JilO mechanism 18 performs I control of the relative positional interval between the readout collector 13 and the charge retention layer member CML constituting the readout unit 16 according to the supplied control signal, as shown in the screen in FIG. A charge latent image in a charge latent image forming portion 2 corresponding to optical black (or white or other specific color) set on at least one side of the recording WA area 1 of the charge retention layer member indicated by reference numeral 2. This will be done based on the signal from

For example, when the level of the reference signal is high, the relative position interval is controlled to be widened, and when it is low, the relative position interval is controlled to be narrowed.

The output video signal sent to the output terminal 5 from the circuit arrangement shown in FIG. It is clear that if the image is supplied to a monitor receiver, a reproduced image with suppressed fluctuations such as shading that occurs during reading can be displayed on the display.

Note that the information to be recorded in the present invention is not limited to the optical image of the subject, but may be information based on other electromagnetic radiation such as xwA, γ rays, and radio waves.

In addition, in a broad sense, the charge latent image of the formation part of the charge latent image for obtaining a reference signal is defined as a specific single level of electromagnetic radiation information, a level that is a combination of levels above 2LX, or a level of electromagnetic radiation information. It may be formed in correspondence with a specific level among the average levels.

(Effects of the Invention) As is clear from the detailed explanation, the charge latent image recording and reproducing apparatus of the present invention can generate a signal set at the reference signal level or information level. If this signal is supplied as a video signal to a monitor receiver, a reproduced image with a large contrast ratio can be displayed on the display, and a signal adjusted according to the level or information of the reference signal can be generated. Furthermore, the relative position of the reading member with respect to the charge retention layer member can be controlled by the reference signal level or information.
Fluctuations such as shading and contrast errors that occur when forming or reading a charge latent image are suppressed, and the present invention can satisfactorily solve the above-mentioned conventional problems.

[Brief explanation of drawings]

FIG. 1 is a block diagram showing an example of the configuration of a light-to-charge converter in an imaging device; FIGS. 2 and 4 are diagrams illustrating a charge holding part and a latent charge image on a material; FIGS. 3 and 9; Fig. 10 is a characteristic curve contingency for explanation, Fig. 5 is a signal waveform contingency, Figs. 6 and 7 are block diagrams showing a configuration example of a black level setting circuit, and Fig. 8 is a configuration of a reading element. FIG. 11 and FIG. 12 are block diagrams showing an example of the configuration of the reading section, FIG. 13 is a diagram showing an example of the configuration of the level adjustment circuit, and FIG. 14 is an example of the configuration of the reading member position control circuit. FIG. 1... Recording area where a charge latent image corresponding to the optical image of the subject is formed, 2... Forming part of the charge latent image corresponding to optical black, 4...
...Subtraction circuit, 5...Output terminal, 6...Black level generation circuit, 7...Sample hold circuit (S/H), 8...Signal generation circuit (SG), 9...Clamp Circuit, 10...
・Polarizer, 11... Analyzer, 12... Wave plate, 13
...reading element, 14...beam splitter, 15
...AGC circuit, 16...reading section, 17...v
4 control signal generation circuit, 18... position control mechanism, CML.
...Charge retention layer member, DML...Dielectric mirror E...
・Electrode, Et...transparent electrode, Etr...transparent electrode,
■...Amount of light passing through the analyzer,...Latent image lens, PCL...Photoconductive layer member, Pj...Laser light,
PML...light modulating material layer, SW...switch, Vl.
...Electric field, VS...power supply. Patent Applicant: Japan Victor Co., Ltd. Representative Umiki
Figure of the Japanese person in the − M -Figure − Fig. 3 Figure 3 Figure (A) (b) (C) Fig. Fig. Fig. Fig. Fig. Fig. Fig. Fig. Figure Fig. Display of the case 1989 Patent Application No. 72635 2. Name of the invention Charge latent image recording reproduction bag - 3. Person making the amendment Relationship to the case Patent applicant address 3-12 Moriya-cho, Kanayō-ku, Yokohama-shi, Kanagawa Prefecture 6
, Contents of amendment (1) Specification, page 42, line 11, “Figure 13 is” and “
Insert "Figure 14, a diagram illustrating the arrangement position of the light-shielding pattern," between "Level" and "Level". (2) Same, page 42, line 12, “Figure 14” was changed to “Figure 15.”
Correct it to "Fig." Written amendment of the above procedure 1. Display of the case 1989 Patent Order No. 72635 2 Name of the invention Charge latent image recording and reproducing device 3 Person making the amendment Relationship to the case Patent applicant Address 3-12 Moriya-cho, Kanayō-ku, Yokohama-shi, Kanagawa Prefecture Voluntary Amendment 5, Detailed explanation of the invention column and Brief explanation of drawings column 6 of the specification subject to amendment, Contents of amendment (1) Specification, "Shading pattern" on page 24, line 20
is corrected so that the light-shielding pattern SP is as shown in FIG. (2) Insert the following sentence between page 25, line 5 and line 6 of the same. [As shown in FIG. 13(a), the above light shielding pattern SP
For example, in the optical path up to the photoconductive layer member PCL of each component of the light-charge conversion section, the recording area 1 where a charge latent image is formed in the charge retention layer member CML as shown in FIG. It is arranged such that a charge latent image forming portion 2 corresponding to optical black is set on at least one side. At this time, the light-shielding pattern SP may be provided on the surface of the transparent electrode Et on the image carrier L side as shown in FIG. 13(b), or the transparent electrode Et may be provided as shown in FIG. and photoconductive layer member PC
It may be arranged between the L and L. (3) Same, p. 36, No. 4
and “Figure 13” on page 37, line 9, respectively.
Figure 4” is corrected. (4) Same, page 38, line 19 and page 40, line 11 [
"Fig. 14" is corrected to "Fig. 15" respectively. (5) "Light modulating material layer" and "SW
"SP...shading pattern," is inserted between "...". that's all

Claims (7)

[Claims] (1) Input electromagnetic radiation information to be recorded into at least a photoconductive layer member and a charge retention layer member disposed between two electrodes to which a predetermined voltage is applied; means for forming a charge latent image on a charge retention layer member that corresponds to the input electromagnetic radiation information; In a charge latent image recording and reproducing device comprising means for reading out a latent image by a reading member disposed close to a charge retention layer member and generating a signal, the charge latent image corresponding to the electromagnetic radiation information is A charge latent image recording/reproducing device in which the level of a signal read out and generated is set based on the level of a reference signal. (2) Input electromagnetic radiation information to be recorded into at least a photoconductive layer member and a charge retention layer member disposed between two electrodes to which a predetermined voltage is applied; means for forming a charge latent image on a charge retention layer member that corresponds to the input electromagnetic radiation information; In a charge latent image recording/reproducing device comprising means for reading a latent image by a reading member disposed close to the charge retention layer member to generate a video signal, a reference is provided on at least one side of the recording area of the charge retention layer member. A charge latent image forming area is set, and the level of the signal generated by reading out the charge latent image corresponding to the electromagnetic radiation information is determined as the charge of the charge latent image forming area using the reference as described above. A charge latent image recording and reproducing device configured to set a level based on the level of information obtained by reading out a latent image. (3) In the charge latent image recording and reproducing device according to claim 1 or 2, the charge latent image corresponds to the electromagnetic radiation information according to a reference signal level or information level. A charge latent image recording and reproducing device that adjusts the level of a signal generated by reading out a charge latent image. (4) In the charge latent image recording and reproducing device according to claim 1 or 2, the charge latent image reading member and the charge retention layer member are arranged in accordance with the reference signal level or the information level. A charge latent image recording and reproducing device that controls relative position. (5) In the charge latent image recording and reproducing device according to any one of claims 1 to 4, the charge latent image for obtaining a reference signal level or information level is recorded during a blanking period in the video signal. A charge latent image recording and reproducing device configured to read out latent charge images. (6) The reference signal level or information level in the charge image recording and reproducing apparatus according to claim 1 or 2 is a specific single level or two or more levels of electromagnetic radiation information. A charge image recording and reproducing device that obtains a charge latent image by reading out a charge latent image formed in a charge latent image forming portion corresponding to a combined level. (7) The reference signal level or information level in the charge image recording and reproducing apparatus according to claim 1 or 2 is the average level of electromagnetic radiation information and the corresponding charge latent image. A charge latent image recording and reproducing device that reads and obtains a charge latent image from a forming portion.