JPH02250321A - Manufacture of semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To prevent a halation during an exposure process by depositing a silicon film on an upper layer of an aluminum film to be used as a wiring layer. CONSTITUTION:A barrier metal film 24 used to prevent aluminum from being penetrated to a semiconductor substrate 1 is deposited on a main face of the semiconductor substrate 1; an aluminum film 25 and a silicon film 26 are deposited on it. By this constitution, the silicon film 26 functions so as to reduce a reflection factor on the surface of the aluminum film 25, and can prevent a halation during an exposure process. Since silicon is introduced into an aluminum wiring part 21 by heat which is applied during a process after the aluminum wiring part 21 has been formed, a reflection factor on the surface of the aluminum wiring part 21 is restored and a detection by means of an image processing apparatus can be made easy. Thereby, it is possible to prevent the halation during the exposure process and to restore the reflection factor on the surface of the aluminum wiring part without executing a proprietary process after the exposure process has been finished.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor integrated circuit device, and particularly to a technique that is effective when applied to photolithography technology.

[Prior art]

Photolithography technology is an essential technology in the manufacturing process of semiconductor integrated circuit devices. When patterning the base film, a photoresist film is deposited on the base film, and the photoresist film is exposed to, for example, ultraviolet light through a mask with a desired pattern. This is a technique for forming a desired pattern on the photoresist film by performing development after changing the molecular structure. The above-mentioned photoresist film includes a multilayer resist film and a single-layer resist film, but the simple single-layer resist film is currently widely used.

By the way, when exposing the single-layer photoresist film deposited on a base layer made of metal such as aluminum, it is necessary to take into account the influence of halation. Here, halation refers to the existence of unevenness in the aluminum base film, and when the side surfaces of the unevenness are not perpendicular to the substrate, light irradiated from above is reflected in an oblique direction by the side surfaces, which is not originally exposed. This is a phenomenon in which the photoresist film in an area that should not be exposed is undesirably exposed. When halation occurs, a pattern different from the desired pattern is formed in the photoresist film. For example, when a positive resist film is used, the molecular structure of the positive resist film that has been undesirably exposed to light due to halation changes and becomes soluble in a developer. The undesirably soluble parts are removed by development, and when the aluminum base film is etched using the positive resist film as a mask, the aluminum underlying the undesirably exposed parts is also undesirably removed. removed,
Undesirable omissions and disconnections occur in the wiring pattern formed of aluminum.

On the other hand, when a negative resist film is used, the molecular structure of the negative resist film that has been undesirably exposed changes and becomes unnecessary, and remains even after development. Therefore, after the etching process, the aluminum located under the portion where the undesired exposure occurred remains undesirably, causing poor insulation of the wiring and short circuit. - In order to prevent wiring pattern defects due to the above-mentioned halation, a material with low reflectivity such as silicon (Si) or molybdenum silicide (MoSi) is deposited on the surface of the aluminum base film described in 1. Methods have been devised to reduce reflected light from the earth's surface. According to the above method, the reflectance of silicon and molybdenum silicide is about half that of aluminum, and since the resist film does not react unless a certain amount of exposure is given, the ultraviolet rays reflected from the silicon or molybdenum silicide surface The resist film cannot be made soluble or unnecessary, and it is possible to prevent undesired reactions of the resist film due to halation and the occurrence of wiring pattern defects due to the halation.

Incidentally, as an example of a document describing a technique for reducing the reflectance of an aluminum surface, V L SI Mu
ltilevel I interconnect, i
on Conference1988 June 1
There are 3-14 P, 453.

[Problem to be solved by the invention]

Machines that manufacture semiconductor integrated circuit devices are required to have high positioning accuracy. For this reason, the manufacturing machine is equipped with a highly accurate positioning table and an image processing device, and the image processing device detects the position of the semiconductor integrated circuit device and corrects the semiconductor integrated circuit device so that it is in the correct position. Let's do it. At this time, a bonding pad formed around the semiconductor substrate is often used as a reference for detecting the position of the semiconductor integrated circuit device. The above-mentioned image processing device uses the difference in reflectance between the above-mentioned bonding pad and surrounding members to detect the above-mentioned bonding pad. By the way, in the above-mentioned semiconductor integrated circuit device, when a molybdenum silicide film is formed on the aluminum film to prevent halation, when heat is applied in a post-process such as hydrogen annealing, the molybdenum silicide is formed on the surface of the aluminum film. Diffusion to form alloys. Similar to the molybdenum silicide, the reflectance of the alloy is lower than that of aluminum. If the bonding pad is made of a material with low reflectance, such as the alloy of molybdenum silicide and aluminum, it becomes difficult for the image processing device to detect the position of the bonding pad. Furthermore, in the bonding process using a wire bonder, if the alloy is present on the surface of the bonding pad, the bonding characteristics will deteriorate. Therefore, before performing the hydrogen annealing step, it is necessary to remove the molybdenum silicide film to restore the reflectance of the bonding pad surface and prevent deterioration of the bonding characteristics. Although the molybdenum silicide film is removed by etching, there are problems in that the number of steps increases and the working time becomes longer. Further, when a silicon film is formed on the aluminum film to prevent halation, the silicon is introduced into the aluminum film when heat is applied in a subsequent step. By the way, silicon is added to the aluminum film in advance to prevent the aluminum from penetrating into the semiconductor substrate. Therefore, when the silicon film is introduced into the aluminum film, the silicon twist in the aluminum film becomes excessive, and the excess silicon precipitates into the aluminum film, reducing the electrical resistance of the aluminum. The inventor of the present invention has discovered that there is a problem of undesired increase.

The purpose of the present invention is to reduce the reflectance of the aluminum film surface during the exposure process to prevent halation, and to prevent an undesired increase in the resistance value of the aluminum film without requiring a dedicated process after the exposure process. It is an object of the present invention to provide a method for manufacturing a semiconductor integrated circuit device that can easily restore the reflectance of the surface of a bonding pad without causing damage.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Means to solve the problem]

A brief overview of typical inventions disclosed in this application is as follows.

That is, a barrier metal film for preventing aluminum from penetrating into the semiconductor substrate is deposited on the main surface of the semiconductor substrate, an aluminum film is deposited on the barrier metal film, and a silicon film is deposited on the aluminum film. .

Further, the aluminum film is formed to contain an insufficient amount of silicon to prevent the aluminum from penetrating into the semiconductor substrate.

Further, silicon in the silicon film is introduced into the aluminum wiring using heat applied during the manufacturing process after forming the aluminum wiring using photolithography technology, so that the silicon film is formed on the surface of the aluminum wiring. It makes it so that it doesn't exist.

[For production]

According to the above-described means, the silicon film deposited on the upper layer of the aluminum film acts to reduce the reflectance of the surface of the aluminum film, thereby making it possible to prevent halation in the exposure process.

In addition, by introducing silicon in the silicon film into the aluminum wiring using the heat applied during the heat treatment process performed after forming the aluminum wiring, the reflectance of the surface of the bonding pad formed with the aluminum wiring can be reduced. The bonding pad can be recovered and easily identified by an image processing device. Further, the step for removing the silicon film can be omitted.

Furthermore, since the aluminum film is formed with an insufficient amount of silicon to prevent the aluminum from penetrating into the semiconductor substrate, when the silicon is introduced into the aluminum film, It is possible to prevent a situation where the silicon concentration in the aluminum film becomes excessive and its resistance value increases undesirably.

Further, by forming a barrier metal film under the aluminum film, it is possible to prevent the aluminum film from penetrating into the semiconductor substrate before introducing the silicon.

〔Example〕

f! FIG. 52 is a longitudinal sectional view of an input protection circuit section of a semiconductor integrated circuit device according to an embodiment of the present invention. The input protection circuit shown in this figure includes, for example, a bonding pad IJ, which is an address input terminal, of a DRAM (dynamic random access memory) formed on a P-type semiconductor substrate 1, but is not particularly limited thereto. It is assumed that the address input buffer is connected between the gate electrode of the transistor constituting the address input buffer. N- is formed extending on the outer periphery of the substrate.
A guard ring 9 made of an N-type semiconductor region is formed extending within the N-type semiconductor region 8 . The input protection circuit is formed immediately inside the guard ring 9, and is formed adjacent to an N-type well region 12 having a required size and serving as an input protection resistor, and the well region 12. N
It is composed of a channel type clamp MISFETQi. Further, at the center of the surface of the N-type well region 12, an N◆-type semiconductor region 20, which is smaller than the N-type well region 12 and is connected to the bonding pad 11, is provided.
is formed. The N-type well region 12 also serves as an input protection resistor. The source electrode 13 of the clamp MISFETQi is in contact with the well region 12, the drain electrode 14 of the clamp MISFETQi is formed with a predetermined distance from the source electrode 13, and a gate made of silicon oxide is formed on the upper layer. A gate electrode 15 made of polycrystalline silicon is formed with an oxide film 16 interposed therebetween.

An interlayer insulating film 19 made of silicon oxide is formed on the gate electrode 15, and sidewall spacers 26 made of silicon oxide are formed on the side surfaces of the gate electrode 15 and interlayer insulating film 19. An insulating film 30 made of silicon oxide is formed on the upper layer of the semiconductor substrate 1 including the input protection circuit elements. The insulating film 30
A contact hole 3 is formed on the N+ type semiconductor region 20 of
0A is opened, and an aluminum wiring 21 is formed which is connected to the N+ type semiconductor region 20 and the bonding pad 11 via the contact hole 30A. Although not shown in this figure, a contact hole is also opened in a required portion of the insulating film 30 above the source electrode 13, and the contact hole is connected to the source electrode 13 through the contact hole and connected to the input circuit. The wiring is formed.

Further, the gate electrode 15 of the insulating film 30. A contact hole 3 is formed in a required portion on the drain electrode 14.
0C and D are opened respectively, and the contact holes 3
An aluminum wiring 23 is formed which is connected to the gate electrode 15 and the drain electrode 14 through 0C and 0C and to the ground terminal Vss. A molybdenum silicide film 24 is formed on the lower surfaces of the bonding pad 11 and the aluminum wiring 21,23.

Interlayer insulating film 30 including the aluminum wiring 21 and 23
The upper layer is a passivation film 31 made of nitride.
is deposited, and the above passivation 1llJ31
An opening 31A is formed on the above-mentioned bonding pad 11. The opening 31 is formed to expose the bonding pad 11 when connecting the semiconductor integrated circuit device to the wiring board by wire bonding using gold wire or aluminum wire after mounting the semiconductor integrated circuit device on the wiring board. has been done. The above-mentioned bonding pad 11 is also used as a reference for detecting the position of the above-mentioned DRAM by an image processing device mounted on the above-mentioned manufacturing machine when setting the above-mentioned r) RAM in various manufacturing machines.

A suitable amount of silicon is contained in the aluminum constituting the bonding pad and wiring. When forming the bonding pads and wiring made of aluminum, an aluminum film not containing silicon is first deposited, and then a silicon film not shown in the figure is formed on top of the aluminum film.

The silicon film is used to reduce the reflectance of the aluminum film surface and prevent halation during the exposure process. Since the aluminum film does not contain silicon, the contact holes 30A to 30
There is a risk that it may penetrate into the semiconductor substrate 1 at point D.

Therefore, the molybdenum silicide film 24 formed under the aluminum film acts as a barrier metal to prevent punching. The silicon film is the aluminum wiring 21.
23. And after the bonding pad 11 is formed, the aluminum wiring 21 is
, 23 and into the bonding pad 11.

Therefore, the reflectance of the surface of the bonding pad 11 is restored, making it easier for the image processing device to detect the bonding pad. Furthermore, since silicon is not included when depositing the aluminum film, the aluminum wiring 21.23'' and the bonding pad 1
No. 1, it is possible to prevent the silicon concentration from becoming excessive after silicon is introduced.

When a positive surge flows into the input protection circuit from the bonding pad 11, the potential of the N-well region 12 increases, breakdown occurs at the junction with the substrate 1, and current flows through the substrate.

Part of the above surge is caused by the adjacent clamp MISF
It flows into the source electrode 13 which is the N1 type region of F:T.

Breakdown occurs at the junction with the substrate 1, and current flows through the substrate. The source electrode 13 is connected to, for example, the gate electrode of a transistor constituting an address input buffer, but since the N-well region 12 has a high resistance component, the surge is alleviated and a high voltage is applied to the transistor. The source electrode 13 works to prevent
Or, by the current flowing from the N-well region 12 to the P-type substrate 1, an NPN parasitic bipolar transistor formed of the N-well region 12, the P-type substrate 1, and the N-type semiconductor region 8 is formed. An emitter-base current flows, and the transistor becomes ON. Therefore, the surge current flows to the power supply terminal Vcc through the guard ring 9 formed inside the N-type semiconductor region 8. Furthermore, a current flows through the substrate due to the breakdown, and the substrate potential rises sharply, but the current flows as a forward current into the drain electrode 14, which is an N+ type semiconductor region.

That is, the power terminal ■n (1
A surge path to the ground terminal Vss is formed through the drain ff1tii4, and a surge path to the ground terminal Vss is formed to alleviate the steep rise in the substrate potential. Further, when a negative surge flows into the input protection circuit, the potential of the N-well region 12 decreases, and the adjacent clamp MIS
An attempt is made to lower the potential of the source electrode 13 of F' ET Q j. The source electrode 13 is connected to the gate electrode of the transistor constituting the address input buffer, but since the N-well region 12 has a high resistance component, the surge is alleviated and high voltage is not applied to the transistor. to work. At this time, clamp MT
The gate-source voltage of SFETQi exceeds its threshold voltage, the MISFETQi turns on, and a current flows from the ground terminal Vss to compensate for the potential drop in the region 13, so the gate of the input circuit transistor is protected. Ru. Further, since the potential of the N-well region 12 decreases, a forward current flows into the region 12 from the P-type substrate 1 in the vicinity of the region 12, and the substrate potential decreases sharply. Due to this substrate potential drop, the P- type substrate 1 and the N-
Since breakdown occurs at the junction with the type semiconductor region 8, the power supply terminal ■Cc is connected through the guard ring 8.
More current is supplied, suppressing a steep drop in substrate potential. Breakdown also occurs at the junction between the P-type substrate 1 and the drain electrode 14 of the clamp MISFET, and the ground terminal V s
Current is supplied from s. That is, a surge path is formed to the power supply terminal VQQ or the ground terminal Vss, thereby alleviating a steep drop in the substrate potential.

Next, the manufacturing process of the input protection circuit shown in FIG.
This will be explained based on FIGS. (a) to (f).

As shown in FIG. 1(a), an N-type semiconductor is formed by diffusing N-type impurities at a low concentration into required parts of a P-type semiconductor substrate 1 in which I) type impurities are diffused at a low concentration. After forming the well regions 8 and 12, a silicon oxide film serving as an element isolation insulating film 17 made of silicon oxide and a gate oxide film 16 is formed. Next, polycrystalline silicon and silicon oxide are sequentially deposited over the entire surface of the substrate, and etched to form the gate i'! A pole 15 and an insulating film 19 above it are formed.

Next, as shown in FIG. 1(b), a high concentration of N-type impurities is introduced into a predetermined position on the main surface of the substrate, and an N-type semiconductor region 20 is formed.
, source region] 3, drain electrode 14, guard ring 9
form. Next, after depositing a silicon oxide film on the semi-six substrate including the gate oxide film 15 and the insulating film 9, directional ion etching is performed to form the gate oxide film 15 and the insulating film 9.
15. Side wall spacer 26 on the side of the insulating film 19
form. Next, after depositing an insulating film 30 made of silicon oxide on the main surface of the substrate, the N+ type semiconductor region 20, the drain electrode 14. A contact hole 30 is formed in a required portion on the gate electrode 15.
Open A, D, and C, respectively.

Next, the manufacturing process of the input protection circuit shown in FIG.
This will be explained based on FIGS. (a) to (f).

As shown in FIG. 1(a), a well region is made of an N-type semiconductor by diffusing N-type impurities at a low concentration into required parts of a P-type semiconductor substrate having a low concentration of P-type impurities diffused therein. After forming 8 and 12, a silicon oxide film serving as an inter-element isolation insulating film 17 made of silicon oxide and a gate oxide film 16 is formed. Next, polycrystalline silicon and silicon oxide are sequentially deposited over the entire surface of the substrate, and etched to form a gate electrode 15 and an insulating film 19 having a desired shape.

Next, as shown in FIG. 1(b), N-type impurities are introduced at a high concentration into predetermined positions on the main surface of the substrate, and the N+-type semiconductor region 20 is
, source region 13, drain electrode 14, guard ring 9
form. Next, silicon oxide is deposited on the semiconductor substrate including the gate electrode 15 and the insulating film 19, and then directional ion etching is performed to form sidewall spacers 26 on the side surfaces of the gate electrode 15 and the insulating film 19. Next, after depositing an insulating film 30 made of silicon oxide on the main surface of the substrate, the N of the insulating film 30 is
Contact holes 30A,
Open D and C respectively.

Next, as shown in FIG. 1(o), a molybdenum silicide film 24 having a thickness of, for example, 100 [mu]
An aluminum film 25 having a thickness of approximately 600 m is deposited thereon, and a silicon film 26 having a thickness of, for example, approximately 600 m is deposited thereon. At this time, the aluminum film 25
The silicon concentration inside is set to almost zero. When the silicon concentration in aluminum is low, penetration is likely to occur in the contact hole portion. This is a phenomenon in which silicon in the semiconductor substrate is expelled into the aluminum by heat, and as a result, the aluminum enters into the semiconductor substrate. In this embodiment, the molybdenum silicide film 24 formed under the aluminum film 25 has a high reaction temperature with respect to the aluminum film 25 and the P'''' type planting board 1, so it acts as a barrier metal and acts as a barrier metal. Extraction can prevent the phenomenon.

Next, as shown in FIG. 1(d), the aluminum film 2
Although not particularly limited, a positive type resist film 27 is deposited on the upper layer of the aluminum film 25, and only the resist film 27 on the upper layer of the aluminum film 25 to be removed by etching is selectively exposed to, for example, ultraviolet light. The resist film 27 is insoluble in the developer, but when exposed to the ultraviolet rays, its molecular structure changes to become soluble.

Since the aluminum film 25 has a high reflectance, if the resist film 27 is deposited directly on the aluminum film 25, the aluminum film will be deposited 9D, in a row or perpendicularly to the substrate, for example directly above the source electrode 13. Halation occurs when ultraviolet rays are reflected in an oblique direction in areas where the area is not exposed, such as directly above the N+ type semiconductor region 20.
Parts of the resist film 27 that should not be exposed are undesirably exposed. In this embodiment, since the silicon film 26 with low reflectance is deposited on the aluminum film 25, the luminous flux of the ultraviolet rays reflected in the oblique direction is also weakened. Since the resist film 27 does not become soluble unless a certain amount of light is applied, that is, the product of luminous flux and time, it is possible to prevent the occurrence of so-called halation in which the resist film 27 is undesirably exposed to light.

Next, as shown in FIG. 1(8), a developing step is performed to selectively remove the exposed and soluble portions of the resist film 27 to form a desired pattern. The resist film 27 formed in the desired pattern serves as a mask when etching the aluminum film 25.

Next, as shown in FIG. 1(f), the aluminum film 2
5, and the aluminum wiring 21 is connected to the N1 type semiconductor region 20 through the contact hole 30A and whose one end becomes the bonding pad 11, and connected to the source electrode 13 through the contact hole 30B. At the same time, an aluminum wiring PA23 is formed which is connected to the input circuit. Next, in order to stabilize the threshold voltage of the 1-transistor formed in the semiconductor integrated circuit device and to ensure conduction between the aluminum wiring and the semiconductor substrate, hydrogen annealing is performed using heat at 400 to 500 [°C]. will be carried out. ” 1. Due to the heat of hydrogen annealing, the bonding pad 11 and the aluminum wiring 21
．． The silicon film 26 formed on the surface of 23 is
It is introduced into the bonding pad and aluminum wiring, and the reflectance of the surface of the bonding pad 11 is restored. By restoring the reflectance, it becomes easier for the image processing device to detect the bonding pad. In this embodiment, the heat of the hydrogen annealing is used to remove the silicon film 26, and there is no need to provide a separate process for removing silicon, thereby simplifying the process and shortening the working time. I can do it.

Before the silicon film 26 is introduced, the bonding pad 11 and the aluminum wiring 21.23 contain almost no silicon, so the silicon film 26
The silicon concentration of the bonding pad 11 and the aluminum interconnections 21 and 23 after the introduction of silicon nitride 6 does not become excessive.

It is possible to prevent an undesirable increase in the resistance values of the bonding pad 11 and the aluminum interconnections 21 and 23 due to the excessive deposition of silicon. Further, the silicon introduced into the bonding pad '11 and the aluminum wiring 21.23 is
．． It works to prevent the penetration of the silicon substrate 23 into the silicon substrate. In combination with the function of the molybdenum silicide film 24 as a barrier metal, the bonding pad 11
, and the effect of preventing punching of the aluminum wiring 21, 23 becomes even more reliable. The above-mentioned pounding pad 11
, and the silicon concentration in the aluminum wirings 21 and 23 can be appropriately controlled by adjusting the thickness of the silicon film 26.

In addition, the above-mentioned bonding pad 11 and aluminum 1
Silicon introduced in 1.23 tends to precipitate around the same silicon.

Therefore, the silicon may undesirably precipitate on the P-type semiconductor substrate that is in contact with the contact holes 30A-D, and the resistance value of the contact hole portion may undesirably increase. , Since silicon is contained in the molybdenum silicide film 24 formed on the lower surface of the bonding pad 11 and the aluminum 21.23, the silicon in the bonding pad 11 and the aluminum 21.23 forms a contact hole portion. This prevents an undesirable increase in the resistance value at the contact hole portion due to precipitation only in the contact hole.

According to the above embodiment, the following effects are obtained.

(1) Since the silicon film 26 formed on the upper layer of the aluminum film 25 has a lower reflectance than the aluminum film 25, halation in the exposure process can be prevented.

(2) The silicon film 26 is formed into the aluminum film 25 by heat in the hydrogen annealing process, and the bonding pad 11 formed in the aluminum film 25 is
Since the reflectance of the bonding pad 11 is restored, it becomes easy to detect the bonding pad 11 by an image processing device.

(3) Since the heat in the hydrogen annealing process is used to introduce the silicon film 26 into the aluminum film 25, there is no need to provide a new process for removing the silicon film 26, which simplifies the process and reduces work time. can be shortened.

(4) Since the silicon content of the aluminum film 25 is almost zero, after introducing the upper silicon film 26, the bonding pad 11 and the aluminum wiring 21 are
．． The silicon content of 23 is perluminium, l121,
It is possible to prevent the resistance value of 23 from increasing undesirably.

(5) Since the molybdenum silicide l]l 24 is formed in the lower layer of the aluminum film 25, it is possible to prevent the aluminum film 25, which has almost zero silicon content, from penetrating into the semiconductor substrate.

(6) The molybdenum silicide film 24 formed under the aluminum film 25 is connected to the bonding pad 11,
Since the silicon introduced into the aluminum wirings 21 and 23 can be deposited in the upper layer thereof, it is possible to prevent the silicon from depositing only in the contact hole portions and resulting in an undesirably high resistance value.

Although the invention made by the present inventor has been specifically described above based on examples, it goes without saying that the present invention is not limited thereto and can be modified in various ways without departing from the gist thereof.

For example, although the wiring layer is one layer in this embodiment, it is not necessarily limited to this, and a multilayer wiring structure having two or more layers can also be used.

Further, in this embodiment, a molybdenum silicide film is formed under the aluminum film, but the invention is not necessarily limited to this, and a barrier metal such as a titanium silicide film or a titanium tungsten film can be appropriately employed.

In the above explanation, the invention made by the present inventor has mainly been explained in the case where it is applied to r) RAM, which is the field of application that forms the background of the invention, but the present invention is not limited thereto, and is applicable to other semiconductor integrated circuits. It can be widely used in circuit devices.

The present invention can be applied to a device having at least an aluminum wiring layer and a bonding pad made of the aluminum wiring.

〔Effect of the invention〕

Among the inventions disclosed in this application, the effects obtained by typical ones are as follows.

That is, by depositing a silicon film on the aluminum film that will become the wiring layer, there is an effect that the reflectance of the surface of the aluminum film can be reduced and halation in the exposure process can be prevented.

In addition, since the silicon is introduced into the aluminum wiring by heat applied in the process after forming the aluminum wiring, the reflectance of the aluminum wiring surface is restored.
This has the effect of facilitating detection by an image processing device. Furthermore, since there is no need to provide a step for removing the silicon, there is an effect that the number of steps and working time can be reduced.

In addition, by forming the aluminum film to contain an insufficient amount of silicon to prevent the aluminum film from penetrating into the semiconductor substrate, the silicon in the aluminum wiring after the silicon is removed can be removed. This has the effect of preventing the concentration from becoming excessive.

Further, by depositing a barrier metal film on the lower layer of the aluminum film, it is possible to prevent the aluminum film formed by containing an insufficient amount of silicon from penetrating into the semiconductor substrate.

[Brief explanation of drawings]

1(a) to (f) are vertical sectional views sequentially showing an example of the manufacturing process of a semiconductor integrated circuit device to which aluminum wiring according to the present invention is applied, and FIG. 2 is a longitudinal sectional view of the semiconductor integrated circuit device shown in FIG. 1. FIG. DESCRIPTION OF SYMBOLS 1... P-type semiconductor substrate, 11... Bonding pad, 21.23... Aluminum wiring, 24... Molybdenum silicide film, 25... Aluminum film, 2
6... Silicon film, 27... Resist film. Figure (b) Figure (f) Figure (d) Figure

Claims (1)

[Claims] 1. In a method of manufacturing a semiconductor integrated circuit device in which aluminum wiring is formed using photolithography technology, a barrier metal film is provided on the main surface of the semiconductor substrate to prevent the aluminum from penetrating into the semiconductor substrate. A method for manufacturing a semiconductor integrated circuit device, comprising the steps of depositing, depositing an aluminum film on the barrier metal film, and depositing a silicon film on the aluminum film. 2. In the step of depositing an aluminum film on the upper layer of the barrier metal film, the aluminum film contains silicon in an amount insufficient to prevent the aluminum from penetrating into the semiconductor substrate. 1. The method for manufacturing a semiconductor integrated circuit device according to 1. 3. Silicon forming the silicon film is introduced into the aluminum wiring by heat applied after forming the aluminum wiring using photolithography technology, so that the silicon film is not present on the surface of the aluminum wiring. 2. The method of manufacturing a semiconductor integrated circuit device according to claim 1, further comprising the step of: