JPH02250245A - Image display device - Google Patents
Image display deviceInfo
- Publication number
- JPH02250245A JPH02250245A JP6939289A JP6939289A JPH02250245A JP H02250245 A JPH02250245 A JP H02250245A JP 6939289 A JP6939289 A JP 6939289A JP 6939289 A JP6939289 A JP 6939289A JP H02250245 A JPH02250245 A JP H02250245A
- Authority
- JP
- Japan
- Prior art keywords
- electron
- electrode
- image
- electron emitting
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000010276 construction Methods 0.000 abstract 2
- 239000002784 hot electron Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、真空中で電子放出を行う素子と蛍光体を塗布
したフェースプレートから成る画像表示装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an image display device comprising an element that emits electrons in a vacuum and a face plate coated with a phosphor.
[従来の技術]
平板状デイスプレィ装置は現在数々のクイズが提案され
ている。代表的なものにエレクトロルミネッセンス方式
、プラズマ方式、液晶方式がある。しかし、・これらの
方式の平面状デイスプレィ装置をカラーテレビジョン用
などの高速走査で画像密度の高い画像が必要なものに応
用しようとした場合、発光効率等に問題があり、また大
画面用としては実用的ではない。このためテレビジョン
用などには真空中で電子源より放出された電子を高電圧
で加速し蛍光体に衝突発光させ画像を再現させる電子線
加速型の平板状デイスプレィ装置が有力候補の一つとな
っている。[Prior Art] Currently, a number of quizzes have been proposed for flat display devices. Representative methods include electroluminescence method, plasma method, and liquid crystal method. However, when trying to apply these types of flat display devices to applications that require high-speed scanning and high-density images, such as color televisions, there are problems with luminous efficiency, and they are not suitable for large screens. is not practical. For this reason, an electron beam acceleration type flat display device, which reproduces images by accelerating electrons emitted from an electron source in a vacuum with high voltage and colliding with a phosphor to reproduce an image, has therefore become a promising candidate for televisions and other applications. ing.
この電子線デイスプレィは、平板状のため耐大気圧構造
を考えた場合、これに適した方法の一つとして画素に電
子源が1対1で対応しているマルチ電子源構造が考えら
れており、電子源についても薄膜による電子源の実現が
提案されている。これらの例として特開昭58−195
6号、特開昭60−225342号等がある。これら電
子線デイスプレィ装置は次のような構造からなる。This electron beam display has a flat plate shape, so when considering atmospheric pressure resistance, one method suitable for this is a multi-electron source structure in which each pixel corresponds to an electron source on a one-to-one basis. Regarding the electron source, it has also been proposed to realize an electron source using a thin film. An example of these is JP-A-58-195.
No. 6, JP-A No. 60-225342, etc. These electron beam display devices have the following structure.
第1図は従来デイスプレィ装置の概要を示すものである
。1はガラス基板、2は支持体、3は配線電極、4は電
子放出部、5は電子通過孔、6は変調電極、7はガラス
板、8は透明電極、9は蛍光体、レジスト材等電子が衝
突することにより発光、変色、帯電、変質等する画像形
成部材、10はフェースプレート、11は蛍光体の輝点
である。電子放出部4は薄膜技術により作成され、ガラ
ス基板1とは接触することがない中空構造を成すもので
ある。配線電極3は電子放出部材と同一の材料を用いて
形成しても、別材料を用いても良(一般に融点が高く電
気抵抗の小さいものが用いられる。支持体2は絶縁体材
料もしくは導電体材料で形成されている。FIG. 1 shows an outline of a conventional display device. 1 is a glass substrate, 2 is a support body, 3 is a wiring electrode, 4 is an electron emission part, 5 is an electron passage hole, 6 is a modulation electrode, 7 is a glass plate, 8 is a transparent electrode, 9 is a phosphor, a resist material, etc. The image forming member emits light, changes color, is charged, changes in quality, etc. by collision with electrons, 10 is a face plate, and 11 is a bright spot of phosphor. The electron emitting section 4 is created by thin film technology and has a hollow structure that does not come into contact with the glass substrate 1. The wiring electrode 3 may be formed using the same material as the electron emitting member, or may be formed using a different material (generally, a material with a high melting point and low electrical resistance is used. The support 2 may be formed of an insulating material or a conductive material. made of material.
これら電子線デイスプレィ装置は、配線電極3に電圧な
印加せしめ中空構造をなす電子放出部より電子を放出さ
せ、これら電子流を情報信号に応じて変調する変調電極
6により電子を取り出し、取り出した電子を加速させ画
像形成部材(蛍光体)9に衝突させるものである。また
、配線電極と変調電極でXYマトリックス電極を形成せ
しめ、画像形成部材上に画像表示を行うものである。These electron beam display devices apply a voltage to a wiring electrode 3 to emit electrons from an electron emitting portion having a hollow structure, and extract the electrons by a modulating electrode 6 that modulates the electron flow according to an information signal. is accelerated to collide with the image forming member (phosphor) 9. Further, an XY matrix electrode is formed by the wiring electrode and the modulation electrode, and an image is displayed on the image forming member.
この電子線デイスプレィは通常I X 10−7〜I
X 10−’torrの真空状態で駆動させる為に、系
全体を真空封止することによりデイスプレィ装置を製作
しなければならない。This electron beam display usually has an IX 10-7 to I
In order to operate in a vacuum state of X 10-'torr, the display device must be manufactured by vacuum-sealing the entire system.
[発明が解決しようとする課題]
しかしながら、上記従来例では次のような問題点があっ
た。[Problems to be Solved by the Invention] However, the above conventional example has the following problems.
1、画像形成部材(蛍光体)9と変調電極6と電子放出
部4の位置合わせが難しい為、大画面で高精細なデイス
プレィが作成できない。1. Because it is difficult to align the image forming member (phosphor) 9, the modulation electrode 6, and the electron emission section 4, it is impossible to create a large-screen, high-definition display.
2、変調電極6と電子放出部4の距離が場所によって異
なる為に表示画像にムラが生じる。これは、熱電子源を
用いたデイスプレィの共通の問題である。電子放出部4
と変調電極6の距離が場所によって変わらないように正
確に製造する必要がある。2. Since the distance between the modulation electrode 6 and the electron emission section 4 varies depending on the location, unevenness occurs in the displayed image. This is a common problem in displays using thermionic sources. Electron emission part 4
It is necessary to manufacture it accurately so that the distance between the modulating electrode 6 and the modulating electrode 6 does not change depending on the location.
3.1.2を鑑みて大画面で高精細なデイスプレィを製
造するには、多大な設備投資が必要であり、デイスプレ
ィの価格も非常に高価になる。In view of 3.1.2, manufacturing a large-screen, high-definition display requires a large amount of capital investment, and the price of the display becomes very high.
[課題を解決するための手段及び作用]本発明は、変調
電極を電子放出部の下、つまり電子源が形成されている
基板上もしくは基板内に設けることにより上述問題点を
解決したものである。[Means and effects for solving the problems] The present invention solves the above-mentioned problems by providing a modulation electrode under the electron emission part, that is, on or in the substrate on which the electron source is formed. .
次に実施例で本発明を詳述する。Next, the present invention will be explained in detail with reference to Examples.
[実施例]
衷l」し2
第2図は本実施例の電子源と変調電極12を示すもので
ある。[Embodiment] Figure 2 shows the electron source and modulation electrode 12 of this embodiment.
本実施例は従来例で電子放出部と蛍光体の間にある変調
電極をガラス基板上に置き変えたものである。This embodiment is a conventional example in which the modulation electrode between the electron emitting part and the phosphor is placed on a glass substrate.
第3図は実施例の画像表示装置の作成法を示すもので、
第2図のA −’A ’の断面である。FIG. 3 shows a method for creating an image display device according to an embodiment.
It is a cross section taken along line A-'A' in FIG.
a、ガラス基板1を充分洗浄し通常良(用いられる蒸着
技術とフォトリソグラフィー技術によりライン状の変調
電極12群を形成する。基板はガラス以外にもアルミナ
セラミックスなどの絶縁体であれば良い。また変調電極
は金、ニッケル、タングステンなどの導電性材料であれ
ば良いが、高融点の熱損傷の少ない材料が好ましく、タ
ングステンやタングステン合金、タンタル等が好適であ
る。a. The glass substrate 1 is thoroughly cleaned, and a group of 12 line-shaped modulation electrodes is formed using the vapor deposition technique and photolithography technique used. The substrate may be made of an insulator such as alumina ceramics other than glass. The modulation electrode may be made of a conductive material such as gold, nickel, or tungsten, but a material with a high melting point and little thermal damage is preferable, and tungsten, a tungsten alloy, tantalum, or the like is preferable.
51次に、蒸着技術により支持体2及び配線電極3、電
子放出部4を順次成膜した。支持体2はガラスを用いた
が熱劣化の少ない絶縁体であればこれに限るものではな
い。本実施例では、配線電極3と電子放出部4をタング
ステンで作成した。ここで、電子放出部4は低仕事関数
材料、配線電極3は熱劣化の少ない低抵抗率材料で形成
することが望ましい。51 Next, the support 2, the wiring electrode 3, and the electron emitting part 4 were sequentially formed into films using a vapor deposition technique. Although glass is used as the support 2, it is not limited to this as long as it is an insulator that is less susceptible to thermal deterioration. In this example, the wiring electrode 3 and the electron emission part 4 were made of tungsten. Here, it is desirable that the electron emitting portion 4 be formed of a low work function material, and that the wiring electrode 3 be formed of a low resistivity material that is less subject to thermal deterioration.
C0次に、フォトリソグラフィー技術とエツチング技術
により、所望の電子放出部4の形状を作成する。C0 Next, a desired shape of the electron emitting section 4 is created by photolithography and etching techniques.
61次に、エツチング技術により、電子放出部4の下の
ガラスを取り除き中空構造を有する電子源と変調電極1
2を作成する。タングステン材料からなる電子放出部4
は厚さ0.8〜2.0pm、幅5〜30pm、長さ50
〜500gmで作成することが望ましいがこの数値に限
るものではない。本実施例では、厚さ1.0μm、幅1
5ルm、長さ200μmで作成した。変調電極12の幅
は800μmで作成し、電子放出部のピッチを1mmと
した。また、ガラス支持体の厚さは5〜1100pが好
適で本実施例では10μmで作成した。変調電極12と
電子放出部4の距離は支持体2の厚さで決まるもので、
従来例と比較すると精度が高いものである。61 Next, by using etching technology, the glass below the electron emitting part 4 is removed to form an electron source with a hollow structure and the modulation electrode 1.
Create 2. Electron emission part 4 made of tungsten material
is 0.8~2.0pm thick, 5~30pm wide, and 50mm long.
Although it is desirable to make the film with a thickness of ~500 gm, it is not limited to this value. In this example, the thickness is 1.0 μm and the width is 1.0 μm.
It was made with a diameter of 5 lumen and a length of 200 μm. The width of the modulating electrode 12 was 800 μm, and the pitch of the electron emission parts was 1 mm. Further, the thickness of the glass support is preferably 5 to 1100 μm, and in this example, the thickness was 10 μm. The distance between the modulation electrode 12 and the electron emission section 4 is determined by the thickness of the support 2.
The accuracy is higher than that of the conventional example.
上述した電子源と変調電極を有するプレートの上に、従
来例で説明したフェースプレートlOを設は画像表示装
置を作成した(図示省略)次に本実施例の駆動法を概説
する。On the plate having the electron source and modulation electrode described above, the face plate lO described in the conventional example was installed to create an image display device (not shown).Next, the driving method of this example will be outlined.
配線電極3に電圧を印加すると電子放出部4が加熱し電
子が放出する。放出した電子は電子放出部4のまわりに
空間的に蓄積し、ここで変調電極12の電圧により該放
出電子の電子流を変調せしめる。変調電極12へ印加す
る電圧は、蛍光体の電圧や、電子放出部4と変調電極1
2の形状、及び電子放出部と変調電極の間隔により異な
る。本実施例では、変調電極12に+IOVの電圧を印
加すると電子流は、蛍光体側へ引き出すことができ、−
30vの電圧を印加すると電子流は引き出すことができ
なかった。また、−30v〜IOVの間の電圧を印加す
ることにより放出電流量を変えることができた。When a voltage is applied to the wiring electrode 3, the electron emitting section 4 is heated and electrons are emitted. The emitted electrons are spatially accumulated around the electron emitting part 4, and the voltage of the modulation electrode 12 modulates the electron flow of the emitted electrons. The voltage applied to the modulation electrode 12 is the voltage of the phosphor and the voltage applied to the electron emission part 4 and the modulation electrode 1.
2 and the distance between the electron emitting part and the modulation electrode. In this example, when a voltage of +IOV is applied to the modulation electrode 12, the electron flow can be drawn out to the phosphor side, and -
When a voltage of 30 V was applied, no electron current could be extracted. Furthermore, the amount of emitted current could be changed by applying a voltage between -30v and IOV.
フェースプレートの位置は電子放出部から1〜10mm
の位置に設は透明電極8の電圧は100〜10.0OO
Vが望ましいがこれに限るものではない。The position of the face plate is 1 to 10 mm from the electron emission part.
The voltage of the transparent electrode 8 set at the position is 100 to 10.0 OO
Although V is preferable, it is not limited to this.
配線電極3と変調電極によりXYマトリックス電極を形
成し、配線電極3を線順次で走査することにより電子を
放出せしめ、情報信号に応じて変調電極12に電圧を印
加し、電子源から電子流を弓き出し、引き出された電子
流を加速させ蛍光体に衝突させ画像表示を行うものであ
る。An XY matrix electrode is formed by the wiring electrode 3 and the modulation electrode, and electrons are emitted by scanning the wiring electrode 3 line-sequentially, and a voltage is applied to the modulation electrode 12 according to the information signal to cause an electron flow from the electron source. The electron flow is accelerated and collided with the phosphor to display an image.
本実施例は、基板上に電子放出部と変調電極が一体に形
成されている為アライメントが容易であり、かつ、薄膜
製造技術で作成している為大画面で高精細なデイスプレ
ィを得ることができた。さらに、電子放出部と変調電極
の間隔を極めて精度良(作成することができるので、輝
度ムラのない極めて−様な画像を形成できた。In this example, the electron emission part and the modulation electrode are integrally formed on the substrate, so alignment is easy, and since it is manufactured using thin film manufacturing technology, it is possible to obtain a large-screen, high-definition display. did it. Furthermore, since the distance between the electron emitting part and the modulation electrode can be created with extremely high precision, it is possible to form an extremely uniform image with uniform brightness.
見立■ユ
第4図は、実施例2の画像表示装置であるところの電子
源と変調電極部である。FIG. 4 shows the electron source and modulation electrode section of the image display device of the second embodiment.
ここでは、実施例1に対し、変調電極12の上部に絶縁
体膜13を設けた。Here, in contrast to Example 1, an insulator film 13 was provided above the modulation electrode 12.
絶縁体膜13の材料はガラス、セラミックス等の熱変質
しにくい絶縁体膜が望ましく、その厚さは1〜15gm
程度が好ましい。変調電極12は、金、ニッケル、アル
ミニウム、タングステン等の導電性材料が好適である。The material of the insulating film 13 is preferably an insulating film such as glass or ceramics that is difficult to change due to heat, and its thickness is 1 to 15 gm.
degree is preferred. The modulation electrode 12 is preferably made of a conductive material such as gold, nickel, aluminum, or tungsten.
実施例1と同様な方法で作成し、評価をしたが実施例1
と同等な変調効果を得た。また、変調電極12は絶縁体
膜13と基板1の間にある為、電子放出部4の輻射熱の
影響が小さく、劣化が小さいことが分かった。よって変
調電極材料の適用範囲は低融点のものまで利用でき得る
。Example 1 was prepared and evaluated in the same manner as in Example 1.
The same modulation effect was obtained. Furthermore, since the modulating electrode 12 is located between the insulating film 13 and the substrate 1, it was found that the influence of radiant heat from the electron emitting section 4 is small, and deterioration is small. Therefore, the modulating electrode material can be applied to materials with low melting points.
1嵐■ユ
本実施例は、第4図に示す実施例2における支持体2を
金属材料で形成したものである。電子放出部4、絶縁体
膜13は実施例2と同様に作成した。また本実施例にお
ける配線電極3は、電子放出部材であるところのタング
ステンとこれを支持する支持体2から形成するものであ
る。1. In this example, the support body 2 in Example 2 shown in FIG. 4 is formed of a metal material. The electron emitting portion 4 and the insulating film 13 were created in the same manner as in Example 2. Further, the wiring electrode 3 in this embodiment is formed from tungsten, which is an electron emitting member, and the support 2 that supports the tungsten.
本実施例における支持体2は銅材料を用いて、その厚さ
を10pn+に形成した。The support 2 in this example was made of copper material and had a thickness of 10 pn+.
本実施例は、実施例1と同等な効果を得るだけでなく、
配線電極3の抵抗を大幅に下げることができるので、特
に大画面で高精細な表示装置に対して有効である。This example not only obtains the same effect as Example 1, but also
Since the resistance of the wiring electrode 3 can be significantly lowered, this is particularly effective for large-screen, high-definition display devices.
[発明の効果]
以上説明したように、変調電極を中空構造を成す熱電子
源下部の基板に設けることにより、電子源と変調電極の
位置合わせが容易となり、さらに表示ムラのない画像を
得るのに効果がある。また、薄膜製造技術で上記熱電子
源と変調電極を製造することにより、大画面でかつ高精
細な画像表示装置を低価格で製造できる。[Effects of the Invention] As explained above, by providing the modulating electrode on the substrate below the thermionic source having a hollow structure, it becomes easy to align the electron source and the modulating electrode, and furthermore, it is possible to obtain an image without display unevenness. is effective. Furthermore, by manufacturing the thermionic source and modulation electrode using thin film manufacturing technology, a large-screen, high-definition image display device can be manufactured at low cost.
第1図は従来の電子線デイスプレィの概要図である。第
2図は実施例1における電子線デイスプレィの電子源と
変調電極部を表わす図である。第3図は実施例1におけ
る電子線デイスプレィの電子源と変調電極部の製法図で
ある。第4図は実施例2,3における電子線デイスプレ
ィの電子源と変調電極及び絶縁体膜を表わす図である。FIG. 1 is a schematic diagram of a conventional electron beam display. FIG. 2 is a diagram showing the electron source and modulation electrode section of the electron beam display in Example 1. FIG. 3 is a diagram showing a manufacturing method of an electron source and a modulation electrode section of an electron beam display in Example 1. FIG. 4 is a diagram showing an electron source, a modulation electrode, and an insulating film of an electron beam display in Examples 2 and 3.
Claims (2)
配置した熱電子線源群と、該熱電子源からの電子流を変
調する変調電極群と電子流の衝突により画像を形成する
画像形成部材とを備えた画像表示装置において、熱電子
放出素子が中空構造を成し、変調電極が電子放出部の下
部に位置し、かつ基板上もしくは基板内に一体に形成さ
れていることを特徴とする画像表示装置。(1) An image is formed by the collision of the electron stream with a thermionic source group in which a plurality of thermionic beam sources each having a plurality of thermionic emission elements arranged in parallel, and a modulation electrode group that modulates the electron flow from the thermionic source. In an image display device equipped with an image forming member, the thermionic emission element has a hollow structure, the modulation electrode is located below the electron emission part, and is integrally formed on or in the substrate. Characteristic image display device.
し、画像を形成することを特徴とする請求項1記載の画
像表示装置。(2) The image display device according to claim 1, wherein the electron source and the modulation electrode group perform matrix driving to form an image.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6939289A JPH02250245A (en) | 1989-03-23 | 1989-03-23 | Image display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6939289A JPH02250245A (en) | 1989-03-23 | 1989-03-23 | Image display device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02250245A true JPH02250245A (en) | 1990-10-08 |
Family
ID=13401284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6939289A Pending JPH02250245A (en) | 1989-03-23 | 1989-03-23 | Image display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02250245A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5385631A (en) * | 1993-02-26 | 1995-01-31 | E. I. Du Pont De Nemours And Company | Method of making plasma display apparatus |
US5635334A (en) * | 1992-08-21 | 1997-06-03 | E. I. Du Pont De Nemours And Company | Process for making plasma display apparatus with pixel ridges made of diffusion patterned dielectrics |
-
1989
- 1989-03-23 JP JP6939289A patent/JPH02250245A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5635334A (en) * | 1992-08-21 | 1997-06-03 | E. I. Du Pont De Nemours And Company | Process for making plasma display apparatus with pixel ridges made of diffusion patterned dielectrics |
US5385631A (en) * | 1993-02-26 | 1995-01-31 | E. I. Du Pont De Nemours And Company | Method of making plasma display apparatus |
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