JPH02231786A - Surface-emission laser device and manufacture thereof - Google Patents
Surface-emission laser device and manufacture thereofInfo
- Publication number
- JPH02231786A JPH02231786A JP1053101A JP5310189A JPH02231786A JP H02231786 A JPH02231786 A JP H02231786A JP 1053101 A JP1053101 A JP 1053101A JP 5310189 A JP5310189 A JP 5310189A JP H02231786 A JPH02231786 A JP H02231786A
- Authority
- JP
- Japan
- Prior art keywords
- laser device
- emitting laser
- liquid substance
- surface emitting
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000605 extraction Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光通信、光計測、光コンピューティング等の
産業上用いられる面発光レーザ装置およびその製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a surface emitting laser device used in industries such as optical communication, optical measurement, and optical computing, and a method for manufacturing the same.
従来の技術
面発光レーザ装置は、光取出方向が半導体基板面に対し
て垂直方向であることから、２次元アレイ化が容易であ
り、並列光伝送、電子集積回路間光結合、並列情報処理
、画像処理等のシステムを構築する上で非常に有用な素
子となる。現在、提案され、あるいは開発されている面
発光レーザ装置は、主として
（１）垂直方向キャビティ型
（２）水平方向キャビティ＋４５゛傾斜反射鏡型（３）
水平′方向キャビティ＋［） Ｂ Ｒ （Ｄｌｓｔｒｉ
ｂｕｔｅｄＢｒａｇｇ Ｒｅｆｌｅｃｔｏｒ）型
の３つの基本型に分類出来る（例えば、「レーザフォー
カス／エレクトローオプ．ティクスＪ （Ｊ．Ｎ，Ｗａ
ｌｐｏｌｅ，ＬＡＳＥＲ ＦＯＣＩＩＳ／ＥＬＥＣＴ
ＲＯ−ＯＰＴＩＣＳ，Ｓｅｐｔｅｍｂｅｒ，（１９８７
）ｐ．８Ｇ））。これらの中で、水平方向キャビティを
有する半導体レーザと４５゜傾斜反射鏡とをモノリシッ
ク集積した面発光レーザ装置の従来技術の一例を第４図
に示す。同図（ａ）は、面発光レーザ装置の端面１と４
５゜傾斜反射鏡２とのなす溝３の部分拡大図であり、同
図（ｂ）は面発光レーザ装置の概略図である。基本構成
は、水平方向キャビティ４および端面１と端面５とで成
るファブリペロー型共振器から構成される半導体レーザ
６、並びに反射鏡２である。半導体レーザ６は従来より
良く研究されているレーザ構造であること、溝３は質量
輸送法（前出文献を参照のこと）、イオンビームエッチ
ング法等により容易に形成し得ること等から第４図に示
した面発光レーザ装置は、他の型の面発光レーザ装置に
比べ、製造が簡単で、レーザ特性が容易に得られるとい
う特徴を有する。Conventional surface-emitting laser devices have a light extraction direction perpendicular to the semiconductor substrate surface, so they can be easily formed into a two-dimensional array, and are useful for parallel optical transmission, optical coupling between electronic integrated circuits, parallel information processing, It is a very useful element in building systems such as image processing. Currently, surface emitting laser devices that have been proposed or developed are mainly (1) vertical cavity type (2) horizontal cavity + 45° inclined reflector type (3)
Horizontal cavity + [) B R (Dlstri
Butted Bragg Reflector) type can be classified into three basic types (for example, "Laser Focus/Electro-Optics J (J.N., Wa
lpole, LASER FOCIIS/ELECT
RO-OPTICS, September, (1987
) p. 8G)). Among these, an example of a conventional surface emitting laser device in which a semiconductor laser having a horizontal cavity and a 45° inclined reflecting mirror are monolithically integrated is shown in FIG. Figure (a) shows end faces 1 and 4 of a surface emitting laser device.
It is a partially enlarged view of the groove 3 formed by the 5° inclined reflecting mirror 2, and FIG. 2B is a schematic diagram of the surface emitting laser device. The basic configuration is a semiconductor laser 6 composed of a horizontal cavity 4 and a Fabry-Perot resonator consisting of an end face 1 and an end face 5, and a reflecting mirror 2. The semiconductor laser 6 has a well-researched laser structure, and the groove 3 can be easily formed by a mass transport method (see the above-mentioned document), an ion beam etching method, etc. The surface emitting laser device shown in 1 has the characteristics that it is easier to manufacture and the laser characteristics can be easily obtained compared to other types of surface emitting laser devices.
発明が解決しようとする課題
しかし、第４図に示した面発光レーザ装置は、端面１か
ら出射されるレーザ光の広がりを反映して、光取出方向
に対しても広がってしまうという問題点があった。Problems to be Solved by the Invention However, the surface emitting laser device shown in FIG. 4 has a problem in that the laser light emitted from the end face 1 also spreads in the light extraction direction, reflecting the spread of the laser light. there were.
本発明は、上述の問題点に鑑み、光取出方向にコリメー
トされた、あるいは、所望の広がり角あるいは集束角を
存するレーザ光が得られる水平方向キャビティを有する
半導体レーザと４５゜傾斜反射鏡とをモノリシック集積
した面発光レーザ装置およびその製造方法を提供するこ
とを目的とする。In view of the above-mentioned problems, the present invention utilizes a semiconductor laser having a horizontal cavity and a 45° inclined reflecting mirror, which can obtain laser light that is collimated in the light extraction direction or has a desired divergence angle or convergence angle. An object of the present invention is to provide a monolithically integrated surface emitting laser device and a method for manufacturing the same.
課題を解決するための手段
上記目的を達成するために本発明は、水平方向キャビテ
ィを有する半導体レーザ端面と４５゜傾斜反射鏡とのな
す溝に、光取出方向に凸なる透明絶縁体層を形成すると
いう構成を有するものである。Means for Solving the Problems In order to achieve the above object, the present invention forms a transparent insulating layer convex in the light extraction direction in a groove formed between a semiconductor laser end face having a horizontal cavity and a 45° inclined reflecting mirror. It has the structure that.
また、その製造方法においては、前記溝内に液体状物質
を注入する工程と、この後、加熱処理により前記液体状
物質を固化させる工程を有するものである。Further, the manufacturing method includes a step of injecting a liquid substance into the groove, and then a step of solidifying the liquid substance by heat treatment.
作用
光取出方向に凸なる透明絶縁体層を形成することにより
、これがレンズの役割を果たし、光取出方向にコリメー
トされたレーザ光を得ることが出来る。また、前記透明
絶縁体層の凸表面形状を変化させることにより、所望の
広がり角あるいは集束角を有するレーザ光が得られる。By forming a transparent insulating layer that is convex in the working light extraction direction, this plays the role of a lens, and it is possible to obtain collimated laser light in the light extraction direction. Further, by changing the shape of the convex surface of the transparent insulating layer, laser light having a desired divergence angle or convergence angle can be obtained.
一方、その製造方法においては、溝内に液体状物質を注
入する工程と、この後、加熱処理により前記液体状物質
を固化させる工程とを設けることにより、前記凸表面形
状は、液体吠物質の粘性を適当に選べば、任意に変化さ
せることが出来、その後の熱処理で安定した固体状の透
明絶縁体層を得ることが出来る。On the other hand, the manufacturing method includes a step of injecting a liquid substance into the groove, and then a step of solidifying the liquid substance by heat treatment, so that the convex surface shape is formed by the liquid substance. If the viscosity is selected appropriately, it can be changed arbitrarily, and a stable solid transparent insulating layer can be obtained by subsequent heat treatment.
実施例 本発明の面発光レーザ装置の一実施例を第１図に示す。Example An embodiment of the surface emitting laser device of the present invention is shown in FIG.
基本構成は、第４図に示した従来例の面発光レーザ装置
の溝３に透明絶縁体層７が形成されたものである。この
光取出方向に凸なる透明絶縁体層７のレンズ効果により
、同図に示したような、光取出方向にコリメートされた
レーザ光が得られる。さらに、本発明の構造は面発光レ
ーザ装置七レンズ（コリメータ）がモノリシックに集積
された装置ともいえる。The basic structure is that of the conventional surface emitting laser device shown in FIG. 4, with a transparent insulating layer 7 formed in the groove 3. Due to the lens effect of the transparent insulating layer 7 that is convex in the light extraction direction, a laser beam collimated in the light extraction direction as shown in the figure is obtained. Furthermore, the structure of the present invention can be said to be a device in which seven lenses (collimators) of a surface emitting laser device are monolithically integrated.
第２図には透明絶縁体層７の凸表面形吠（球面としたと
き）を変化させた場合のレーザ光の光路および広がりが
示されている。同図（ａ）、（ｂ）、＜ｃ）のように凸
表面形状を変化させる（曲率半径Ｒａ，Ｒｈ ．Ｒｃの
関係は、Ｒａ＞ Ｒｈ＞ Ｒｅ）ことにより、所望の広
がり角を有する、コリメートされた、あるいは、所望の
集束角を有するレーザ光を得ることが出来る。また、透
明絶縁体層７には例えば、レジスト材料として良く用い
られる有機物質等を用いることが、後に述べる本発明の
製造方法の一実施例の観点、あるいは、本発明の面発光
レーザ装置に用いられる半導体材料との密着性等の観点
から宵効である。FIG. 2 shows the optical path and spread of laser light when the convex surface shape (when it is made into a spherical surface) of the transparent insulating layer 7 is changed. By changing the convex surface shape as shown in FIG. Laser light that is collimated or has a desired focusing angle can be obtained. Furthermore, it is preferable to use, for example, an organic substance that is often used as a resist material for the transparent insulating layer 7, from the viewpoint of an embodiment of the manufacturing method of the present invention described later, or for use in the surface emitting laser device of the present invention. It is effective in terms of adhesion to semiconductor materials used.
本発明の面発光レーザ装置の製造方法の一実施例を第３
図に示す。第４図に示した従来例の面発光レーザ装置（
第３図（ａ））の溝３内へ、細管（あるいはピンホール
）８を通して、加熱処理後固化する液体状物質（例えば
、レジスト材料として良く用いられる有機物質等を当該
溶媒に溶かしたもの）８を注入する（第３図（ｂ））。A third embodiment of the method for manufacturing a surface emitting laser device of the present invention will be described in the third embodiment.
As shown in the figure. The conventional surface emitting laser device shown in Fig. 4 (
Pass a thin tube (or pinhole) 8 into the groove 3 in FIG. 3(a)) and pass a liquid substance that solidifies after heat treatment (for example, an organic substance often used as a resist material dissolved in the solvent). 8 (Fig. 3(b)).
このとき、溶媒の量を変えることにより、液体状物質θ
の粘性を変え、この粘性の変化によって、第２図（ａ）
，（ｂ），（Ｃ）に示したごとく、透明絶縁体層７の表
面凸形吠を所望の形状に変化させることが出来る。この
後、加熱処理によって、液体状物質９を固化させる（第
３図（Ｃ））。加熱処理手段としては、ランプ加熱、電
気炉（ベータ炉）加熱等が用いられる。加熱温度は、例
えば、透明絶縁体層７にポリイミドを用いた場合は３０
０℃程度である。以上の工程により、本発明の面発光レ
ーザ装置の製造方法を与えることが出来る。At this time, by changing the amount of solvent, the liquid substance θ
By changing the viscosity of
, (b) and (C), the surface convex shape of the transparent insulating layer 7 can be changed to a desired shape. Thereafter, the liquid substance 9 is solidified by heat treatment (FIG. 3(C)). As the heat treatment means, lamp heating, electric furnace (beta furnace) heating, etc. are used. For example, when polyimide is used for the transparent insulating layer 7, the heating temperature is 30°C.
The temperature is about 0°C. Through the above steps, it is possible to provide a method for manufacturing a surface emitting laser device of the present invention.
なお本実施例は粘性の異なる液体杖物質を用いて所望の
凸形状を有する透明絶縁体履を形成したが、液体状物質
を固化させる加熱温度を変えることにより所望の凸形状
を有する透明絶縁体層を形成してもよい。In this example, a transparent insulator having a desired convex shape was formed using liquid substances with different viscosities, but a transparent insulator having a desired convex shape could be formed by changing the heating temperature for solidifying the liquid substance. A layer may be formed.
発明の効果
以上の説明から明かなように本発明は、光取出方向にコ
リメートされた、あるいは、所望の広がり角あるいは集
束角を有するレーザ光が得られので、フレキシビリティ
の高い、かつ、光通信、光計測、光コンビューティグ等
のシステムを構築する上で非常に宵用な面発光レーザ装
置を提供することが出来る。また、具体的かつ有効な面
発光レーザ装置の製造方法を提供することが出来る等の
多大なる効果をもたらす。Effects of the Invention As is clear from the above explanation, the present invention provides a laser beam that is collimated in the light extraction direction or has a desired spread angle or convergence angle, and is therefore highly flexible and suitable for optical communication. It is possible to provide a surface-emitting laser device that is very useful in constructing systems such as optical measurement, optical computing, and the like. Moreover, it brings about great effects such as being able to provide a specific and effective manufacturing method for a surface emitting laser device.
第１図は本発明の面発光レーザ装置の一実施例を示す概
略図、第２図は本発明の面発光レーザ装置の一実施例に
おいて透明絶縁体層の凸表面形伏を変化させた場合のレ
ーザ光の光路および広がりを示す概略図、第３図は本発
明の面発光レーザ装置の製造方法の一実施例を示す工程
図、第４図は従来技術の面発光レーザ装置の一例を示す
概略図である。
１・・・・端面、２・・・・４５”傾斜反射鏡、３・・
・・溝、７・・・・透明絶縁体層、８・・・・細管、９
・・・・液体状物質。
代理人の氏名 弁理士 栗野重孝 はか１名搭
図
第
図
（Ｑ冫FIG. 1 is a schematic diagram showing an embodiment of the surface emitting laser device of the present invention, and FIG. 2 is a schematic diagram showing an embodiment of the surface emitting laser device of the present invention in which the shape of the convex surface of the transparent insulating layer is changed. FIG. 3 is a process diagram showing an embodiment of the method for manufacturing a surface emitting laser device of the present invention, and FIG. 4 shows an example of a conventional surface emitting laser device. It is a schematic diagram. 1... End face, 2... 45" inclined reflector, 3...
...Groove, 7...Transparent insulator layer, 8...Thin tube, 9
...Liquid substance. Name of agent: Patent attorney Shigetaka Kurino
Claims (4)
°傾斜反射鏡とをモノリシック集積した面発光レーザ装
置において、前記半導体レーザ端面と前記反射鏡とのな
す溝に、光取出方向に凸なる透明絶縁体層が形成されて
いることを特徴とする面発光レーザ装置。(1) Semiconductor laser with horizontal cavity and 45
A surface emitting laser device monolithically integrated with an inclined reflecting mirror, characterized in that a transparent insulating layer convex in the light extraction direction is formed in a groove formed between the end face of the semiconductor laser and the reflecting mirror. Light emitting laser device.
あることを特徴とする特許請求の範囲第１項記載の面発
光レーザ装置。(2) The surface emitting laser device according to claim 1, wherein the transparent insulating layer is a liquid substance before being heat-treated.
体レーザと４５°傾斜反射鏡とをモノリシック集積した
後、前記半導体レーザ端面と前記反射鏡とのなす溝内に
、液体状物質を注入する工程と、この後、加熱処理によ
り前記液体状物質を固化させる工程とを備えたことを特
徴とする面発光レーザ装置の製造方法。(3) After monolithically integrating a semiconductor laser having a horizontal cavity and a 45° inclined reflection mirror on a semiconductor substrate, a step of injecting a liquid substance into a groove formed between the end face of the semiconductor laser and the reflection mirror; . A method for manufacturing a surface emitting laser device, comprising the steps of: solidifying the liquid substance by heat treatment.
通して行い、注入された前記液体状物質表面が加熱処理
後、所望の曲率半径を有する凸形状となる粘性を有する
液体状物質を用いることを特徴とする特許請求の範囲第
３項記載の面発光レーザ装置の製造方法。(4) The liquid substance is injected through a thin tube or pinhole, and the liquid substance has a viscosity such that the surface of the injected liquid substance becomes convex with a desired radius of curvature after heat treatment. A method of manufacturing a surface emitting laser device according to claim 3, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1053101A JPH02231786A (en) | 1989-03-06 | 1989-03-06 | Surface-emission laser device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1053101A JPH02231786A (en) | 1989-03-06 | 1989-03-06 | Surface-emission laser device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02231786A true JPH02231786A (en) | 1990-09-13 |
Family
ID=12933397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1053101A Pending JPH02231786A (en) | 1989-03-06 | 1989-03-06 | Surface-emission laser device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02231786A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1263098A2 (en) * | 2001-05-25 | 2002-12-04 | Seiko Epson Corporation | Surface emission laser and manufacturing method for surface emission laser, light reception element and manufacturing method for light reception element, and optical transceiver module |
| WO2001093385A3 (en) * | 2000-05-31 | 2003-11-06 | Nova Crystals Inc | Surface-emitting laser devices with integrated beam-shaping optics and power-monitoring detectors |
| JP2009135528A (en) * | 2009-03-13 | 2009-06-18 | Hitachi Ltd | Semiconductor optical element |
| JP2009283639A (en) * | 2008-05-21 | 2009-12-03 | Opnext Japan Inc | Surface light emitting laser element and its production process |
| US8315287B1 (en) | 2011-05-03 | 2012-11-20 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device |
| US8582618B2 (en) | 2011-01-18 | 2013-11-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device |
| JP2017028125A (en) * | 2015-07-23 | 2017-02-02 | 日本電信電話株式会社 | Semiconductor laser element |
-
1989
- 1989-03-06 JP JP1053101A patent/JPH02231786A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001093385A3 (en) * | 2000-05-31 | 2003-11-06 | Nova Crystals Inc | Surface-emitting laser devices with integrated beam-shaping optics and power-monitoring detectors |
| EP1263098A2 (en) * | 2001-05-25 | 2002-12-04 | Seiko Epson Corporation | Surface emission laser and manufacturing method for surface emission laser, light reception element and manufacturing method for light reception element, and optical transceiver module |
| EP1263098A3 (en) * | 2001-05-25 | 2004-12-29 | Seiko Epson Corporation | Surface emission laser and manufacturing method for surface emission laser, light reception element and manufacturing method for light reception element, and optical transceiver module |
| US6999493B2 (en) | 2001-05-25 | 2006-02-14 | Seiko Epson Corporation | Surface emission laser and manufacturing method for surface emission laser, light reception element and manufacturing method for light reception element, and optical transceiver module |
| JP2009283639A (en) * | 2008-05-21 | 2009-12-03 | Opnext Japan Inc | Surface light emitting laser element and its production process |
| JP2009135528A (en) * | 2009-03-13 | 2009-06-18 | Hitachi Ltd | Semiconductor optical element |
| US8582618B2 (en) | 2011-01-18 | 2013-11-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device |
| US8315287B1 (en) | 2011-05-03 | 2012-11-20 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device |
| JP2017028125A (en) * | 2015-07-23 | 2017-02-02 | 日本電信電話株式会社 | Semiconductor laser element |
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