JPH0222664A - Production of electrophotographic sensitive body - Google Patents
Production of electrophotographic sensitive bodyInfo
- Publication number
- JPH0222664A JPH0222664A JP17234888A JP17234888A JPH0222664A JP H0222664 A JPH0222664 A JP H0222664A JP 17234888 A JP17234888 A JP 17234888A JP 17234888 A JP17234888 A JP 17234888A JP H0222664 A JPH0222664 A JP H0222664A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- temperature
- oxide hydrate
- layer
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000005406 washing Methods 0.000 claims abstract description 6
- 108091008695 photoreceptors Proteins 0.000 claims description 15
- 229910000838 Al alloy Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 5
- 229910001370 Se alloy Inorganic materials 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 23
- 230000000694 effects Effects 0.000 abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000007864 aqueous solution Substances 0.000 abstract 2
- 238000007664 blowing Methods 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 239000002585 base Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003925 fat Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 241000519995 Stachys sylvatica Species 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/142—Inert intermediate layers
- G03G5/144—Inert intermediate layers comprising inorganic material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はアルミニウムまたはアルミニウム合金製の基
体の表面に感光層を被着した電子写真感光体の製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing an electrophotographic photoreceptor in which a photosensitive layer is coated on the surface of a substrate made of aluminum or an aluminum alloy.
電子写真複写機に用いられる電子写真感光体は通常アル
ミニウムまたはアルミニウム合金のような導電性金属を
円筒状に形成した基体の表面にセレンまたはセレン合金
などの無機材料を真空蒸着して製造される。この場合真
空蒸着前の基体の表面に形成される酸化膜は帯電位保持
率、残留電位。An electrophotographic photoreceptor used in an electrophotographic copying machine is usually manufactured by vacuum-depositing an inorganic material such as selenium or a selenium alloy onto the surface of a cylindrical base made of a conductive metal such as aluminum or an aluminum alloy. In this case, the oxide film formed on the surface of the substrate before vacuum deposition has a charge potential retention rate and residual potential.
繰り返し疲労特性等に影響を与える。たとえばこの酸化
膜の厚さが自然酸化膜の厚さ程度(10〜15A0)の
ように薄い場合には基体からの電荷注入に対してブロッ
キング層としての作用を十分果さないので所要の帯電位
保持率が得られない。これとは逆に酸化膜の厚さが著し
く厚い場合は、残留電位が高くなり複写画源にかぶり現
象が生じたり、aiコントラストの低下を来すなどの不
具合がある。さらに蒸着前の基体表面の清浄度がよくな
いと部分的に酸化膜の密着度が悪くなったり、酸化膜面
内でバラツキを生じ、これがため複写画像に黒点や白抜
けが生じたり、最悪の場合には膜剥離によるピンホール
が発生する。Affects cyclic fatigue characteristics, etc. For example, if the thickness of this oxide film is as thin as the thickness of a natural oxide film (10 to 15 A0), it will not function sufficiently as a blocking layer against charge injection from the substrate, so the required charge potential will not be sufficient. Unable to obtain retention rate. On the other hand, if the oxide film is extremely thick, the residual potential becomes high, causing problems such as fogging of the copy image source and a decrease in AI contrast. Furthermore, if the cleanliness of the substrate surface before vapor deposition is not good, the adhesion of the oxide film may be poor in some areas, and variations may occur within the oxide film surface, resulting in black spots or white spots on the copied image, or in the worst case scenario. In some cases, pinholes occur due to film peeling.
このため感光体の基体に感光膜を被着させる工程の前に
前処理工程を採り入れるが、従来は次のような前処理工
程を行なっていた。すなわちまず基体をトリクレン、硝
醪、アルカリあるいは純水によって洗浄作業が行なわれ
る。次いで電荷注入のブロッキング層として十分な膜厚
の酸化膜を設けるため熱酸化作業に入る。そのため作業
時間と作業工数が多くかかるという問題があった。しか
も熱酸化後のアルミニウムまたはアルミニウム合金製基
体と蒸着膜との密着性は必ずしも高いものでなく、より
高い密着性が要求されていた。For this reason, a pretreatment step is adopted before the step of applying a photoresist film to the substrate of the photoreceptor, and conventionally, the following pretreatment step has been carried out. That is, first, the substrate is cleaned with trichlene, nitrile, alkali, or pure water. Next, a thermal oxidation operation is started to provide an oxide film of sufficient thickness as a blocking layer for charge injection. Therefore, there was a problem in that it required a lot of work time and man-hours. Furthermore, the adhesion between the aluminum or aluminum alloy substrate and the deposited film after thermal oxidation is not necessarily high, and higher adhesion has been required.
この発明は上述した欠点を除去し、前処理工程を簡単に
して、短時間で良好な洗浄効果が得られ、しかも基体か
らの電荷注入に対するプロ、キング層としての酸化膜を
形成することができ良質な画像が得られる電子写真感光
体の製造方法を提供することを目的とする。This invention eliminates the above-mentioned drawbacks, simplifies the pretreatment process, provides good cleaning effects in a short time, and forms an oxide film as a protective and king layer for charge injection from the substrate. An object of the present invention is to provide a method for manufacturing an electrophotographic photoreceptor that provides high-quality images.
発明
この#尖では上述した目的達成のため感光層形成の前に
次のような前処理工程を行なった。すなわちアルミニウ
ムまたはアルミニウム合金製の基体の表面にセレンまた
はセレン合金を真空蒸着して感光層を形成する電子写真
感光体の製造方法において、感光層を形成する前の前処
理工程として基体を温度(3)℃以上の水系処理による
洗浄を行なって基体表面に水和酸化物を形成させ、この
水和酸化物を介して感光膜を被着した。In order to achieve the above-mentioned purpose, the following pretreatment process was carried out before the formation of the photosensitive layer. That is, in a method for producing an electrophotographic photoreceptor in which a photosensitive layer is formed by vacuum-depositing selenium or a selenium alloy on the surface of a substrate made of aluminum or an aluminum alloy, the substrate is heated to a temperature of ) A water-based treatment was performed to form a hydrated oxide on the surface of the substrate, and a photoresist film was applied via the hydrated oxide.
基体を90”C以上の温水に浸漬、基体表面に水蒸気を
吹付けなど行なうことにより基体表面に水和酸化物層を
形成し、洗浄と同時(こプロ、キング層としての酸化膜
を形成する。A hydrated oxide layer is formed on the surface of the substrate by immersing the substrate in hot water of 90"C or higher and spraying water vapor onto the surface of the substrate, and at the same time as cleaning (this process forms an oxide film as a king layer). .
第1図はこの発明の第1の実施例で使用する処理槽の縦
断面図で、側壁面1に電気ヒータ2が埋め込まれ、内部
に水Wが貯溜される。電気ヒータ2は槽外に設けられた
ヒータ電源3と温度制御回路4により入力電流が制御さ
れて温度調整されるが、水W中に設置された温度測定グ
ローブ5からの水温フィードパ、りによって温度制御回
路4は調整される。なお水Wは攪拌羽根6により攪拌さ
れて水温が均一となる。基体7は支持器8により支持さ
れながら水W中に浸漬される。FIG. 1 is a longitudinal sectional view of a processing tank used in a first embodiment of the present invention, in which an electric heater 2 is embedded in a side wall surface 1 and water W is stored inside. The temperature of the electric heater 2 is adjusted by controlling the input current by a heater power supply 3 and a temperature control circuit 4 provided outside the tank. The control circuit 4 is regulated. Note that the water W is stirred by the stirring blade 6 so that the water temperature becomes uniform. The base body 7 is immersed in water W while being supported by a supporter 8.
以下に第1の実施例による前処理工程を説明する。まず
アルミニウムまたはアルミニウム合金製の円筒管状の基
体7に付着している油脂を除去するためトリクレン洗浄
を行なう。次いでこの洗浄済の基体7を支持器8ζこて
支持させながら第1図;こ示す処理槽に浸漬させる。こ
の時の処理槽内の水Wの温度を50℃、70℃、90°
Cに設定し浸漬時間を変えて下表に示すような6種類の
実験を行なった0
12.5wt%Te層を約5μm真空蒸着した、この場
合の蒸着条件は下記の通りである。The pretreatment process according to the first embodiment will be explained below. First, triclean cleaning is performed to remove fats and oils adhering to the cylindrical tubular substrate 7 made of aluminum or aluminum alloy. Next, the cleaned substrate 7 is immersed in a treatment bath shown in FIG. 1 while being supported by a supporter 8ζ. At this time, the temperature of water W in the treatment tank is 50℃, 70℃, 90℃.
Six types of experiments were conducted as shown in the table below by setting the temperature to C and changing the immersion time. A 0.12.5 wt % Te layer was vacuum deposited to a thickness of about 5 μm. The deposition conditions in this case were as follows.
(I)軸温度 60℃
(II)真空度 10−0−5To
rr(蒸発源温度 340°C
(IV)蒸着速度 1μm/m i n以上の第1の
実施例1こ対する比較例として基体を従来の代表的な工
程と同様にトリクレン洗浄後、純水洗浄を5分間行なっ
たのち温度275°Cの加熱処理を45分間行なう。こ
の前処理工程ののち基体に前記と同じ蒸着条件で真空蒸
着を行なった。(I) Shaft temperature: 60°C (II) Degree of vacuum: 10-0-5Torr (evaporation source temperature: 340°C As in the typical conventional process, after cleaning with trichlorethylene, cleaning with pure water is performed for 5 minutes, and then heat treatment at a temperature of 275°C is performed for 45 minutes.After this pretreatment process, vacuum evaporation is performed on the substrate under the same evaporation conditions as above. I did it.
上記のようにして作成した第1の実施例による感光体お
よび比較例としての感光体を複写機に装着して行なった
コピー画像テストおよび電気的特性、密着性テストの結
果を第1表に示す。Table 1 shows the results of copy image tests, electrical characteristics, and adhesion tests conducted by installing the photoreceptor according to the first example prepared as described above and the photoreceptor as a comparative example in a copying machine. .
浸漬後基体7を処理槽より取り出し、水分が蒸発した後
、図示せぬ蒸着装置の支持軸に取付け、基体7の表面上
に第1層目にSe−5wt%Te層を約55Pm真空蒸
着し、さらに第2層目としてSe−第
表
O・・・極めて良好 O・・・良好 Δ・・・実用
上可第1表の中で電気的特性(こおける感度v2 zよ
び残留電位v3は、それぞれ帯!電位を700V−定と
してハーフトーン対応した露光を行なった時の表面電位
および白紙露光電位である。帯電低下ΔVB3ooおよ
び300回後の残留電位vR3ooはそれぞれ通常の複
写工程を300回繰り返した後の帯電位の初期の値に対
する低下量および300回繰り返した後の残留電位であ
る。After the immersion, the substrate 7 was taken out from the processing tank, and after the moisture had evaporated, it was attached to a support shaft of a vapor deposition device (not shown), and a Se-5wt% Te layer of about 55 Pm was vacuum-deposited as a first layer on the surface of the substrate 7. , and further Se as the second layer - Table 0...Extremely good O...Good Δ...Practically acceptable In Table 1, the electrical characteristics (sensitivity v2 z and residual potential v3 are These are the surface potential and blank paper exposure potential when exposure corresponding to halftone is performed with the band potential at 700 V-constant.Charging drop ΔVB3oo and residual potential after 300 times vR3oo are obtained by repeating the normal copying process 300 times. These are the amount of decrease in the charged potential after the initial value and the residual potential after repeating 300 times.
第1の実施例による感光体は第1表で明らかなように画
像の均一性は比較例(従来の前処理方法)と同様の良好
な結果が得られた。基体の処理条件90”C1分間以上
(実験4,5.6)では比較例に比べて優れた密着性が
得られる。なお処理条件(資)°C1分間(実験1)と
70°C1分間(実験2)とでは密着性の改善は認めら
れなかった。また実用上の画像にはほとんど影響しない
が処理条件(3)℃5分間(実験5)、90 ”C30
分間(実験6)では感度および残留電位にわずかに劣化
の傾向が見られるがこれは酸化膜が厚く形成され過き“
たためと推測される。したがって浸漬条件は90℃で1
〜2分程程度好ましい。As is clear from Table 1, the photoreceptor according to the first example had good image uniformity similar to that of the comparative example (conventional pretreatment method). Under the substrate processing conditions of 90°C for 1 minute or more (Experiments 4, 5.6), superior adhesion can be obtained compared to the comparative example. No improvement in adhesion was observed in experiment 2). Although it had little effect on practical images, processing conditions (3) 5 minutes at ℃ (experiment 5), 90"C30
(Experiment 6), there is a slight tendency for sensitivity and residual potential to deteriorate, but this is due to the oxide film being too thick.
It is presumed that this was due to an accident. Therefore, the immersion conditions are 90℃ and 1
About 2 minutes is preferable.
第2図はこの発明の第2の実施例で使用する処理槽の縦
断面図で槽壁面11で密閉された槽内には中心部に同筒
状でその側壁面に電気ヒータ12を有する支持器13が
設けられる。基体14はこの支持器13に嵌込まれる。FIG. 2 is a longitudinal cross-sectional view of a processing tank used in a second embodiment of the present invention. Inside the tank, which is sealed with a tank wall 11, there is a cylindrical support in the center with an electric heater 12 on the side wall. A container 13 is provided. The base body 14 is fitted into this supporter 13.
この支持器13および基体14の外周部には、管壁に多
数のノズル15aを有する水蒸気導入管15が複数本植
設されている。16は排出口である。この処理槽におい
ては水蒸気導入管15より導入された水蒸気はノズル1
5aより噴出し、この水蒸気は基体14に吹付けられて
基体表面に水和酸化物層を形成するもので、基体表面に
付着した塵埃を除去することができ洗浄と同時に、ブロ
ッキング層としての酸化膜を形成することができ、感光
層被着前の前処理時間を短縮することができる。しかも
この水和酸化物層を形成した基体と真空蒸着lこより被
着される感光膜との密着性は極めて良好である。A plurality of water vapor introduction pipes 15 having a plurality of nozzles 15a on the pipe wall are installed on the outer periphery of the supporter 13 and the base body 14. 16 is a discharge port. In this treatment tank, the water vapor introduced from the water vapor introduction pipe 15 is transferred to the nozzle 1.
5a, this water vapor is sprayed onto the substrate 14 to form a hydrated oxide layer on the surface of the substrate, which can remove dust adhering to the surface of the substrate. A film can be formed, and the pretreatment time before photosensitive layer deposition can be shortened. Moreover, the adhesion between the substrate on which the hydrated oxide layer is formed and the photoresist film deposited by vacuum deposition is extremely good.
以下に第2の実施例による前処理工程を説明する。まず
アルミニウムまたはアルミニウム合金製の円筒管状の基
体14に付着している油脂を除去するためトリクレン洗
浄を行なう。この洗浄が終了した基体を第2図1こ示す
処理槽ζこ入れて支持器13に取付け、電気ヒータ12
により加熱する。この加熱は、常温状態の基体14に直
接水蒸気を吹き付けると水滴が生ずるのでこの水滴を防
止するために行なうものである。基体の温度が100”
Cに達すれば水蒸気導入管15より導入した水蒸気をノ
ズル15aより噴出し基体14の表面lこ水蒸気を3分
間吹付ける。水蒸気吹付けを終れば基体14を処理槽よ
り出し、図示せぬ蒸着装置の支持軸に取付けて基体14
の表面に第1層目としてSe−5w1%Te層を約55
μmJ空蒸着し、さらに第2層目として8e−12,5
wt%Te9層を約5μm蒸着した。この場合の蒸着条
件は下記の通りである。The pretreatment process according to the second embodiment will be explained below. First, triclean cleaning is performed to remove fats and oils adhering to the cylindrical tubular base 14 made of aluminum or aluminum alloy. The substrate that has been cleaned is placed in the treatment tank ζ shown in FIG.
Heat. This heating is performed to prevent water droplets from forming if water vapor is directly sprayed onto the base 14 at room temperature. Base temperature is 100”
When the temperature reaches C, the steam introduced from the steam introduction pipe 15 is jetted out from the nozzle 15a, and the steam is sprayed onto the surface of the base 14 for 3 minutes. When the water vapor spraying is finished, the substrate 14 is taken out of the processing tank and attached to a support shaft of a vapor deposition device (not shown).
Se-5w1%Te layer is applied as the first layer on the surface of the
8e-12,5 as the second layer.
A wt% Te9 layer was deposited to a thickness of approximately 5 μm. The vapor deposition conditions in this case are as follows.
(I)軸温度 60°C
(II)真空度 lQ Torr
(III)蒸発源温度 340゛C(IV)蒸着速
度’ l pm/min以上の第2の実施例に対
する比較例として基体を従来の代表的な工程と同様にト
リクレン洗浄後、純水洗浄を5分間なったのち温度27
5°Cの加熱処理を45分間行なう。この前処理工程の
のち基体上に前記と同じ蒸着条件で真空蒸着を行なった
。(I) Shaft temperature: 60°C (II) Degree of vacuum: 1Q Torr (III) Evaporation source temperature: 340°C (IV) Evaporation rate: 1 pm/min As a comparative example for the second embodiment, the substrate was used as a conventional representative substrate. Similar to the process, after washing with Triclean, wash with pure water for 5 minutes, and then reduce the temperature to 27℃.
Heat treatment at 5°C is performed for 45 minutes. After this pretreatment step, vacuum deposition was performed on the substrate under the same deposition conditions as above.
上記のようにして作成した第2の実施例による感光体お
よび比較例としての感光体を複写機に装着して行なった
コピー画像テストおよび電気的特性、密着性テストの結
果を第2表に示す。Table 2 shows the results of copy image tests, electrical characteristics, and adhesion tests conducted by installing the photoreceptor according to the second example prepared as described above and the photoreceptor as a comparative example in a copying machine. .
第
表
第2表の中で電気的特性における感度■2 および残留
電位を700 V一定として、それぞれハーフトーンに
対応した露光を行なった時の表面電位および白紙露光電
位である。帯電位低下Δ■B3oo および300回
後の残留電位vR300は、それぞれ通常の複写サイク
ルを300回繰り返した後の帯電位の初期の値(こ対す
る低下量および300回繰り返した後の残留電位である
。Table 2 shows the surface potential and blank paper exposure potential when exposure corresponding to halftone is carried out with the sensitivity (2) in the electrical characteristics and the residual potential being constant at 700 V, respectively. The charge potential drop Δ■B3oo and the residual potential after 300 times vR300 are the initial values of the charge potential after repeating the normal copying cycle 300 times (the corresponding reduction amount and the residual potential after repeating 300 times), respectively. .
第2の実施例による感光体は第2表に示したように、画
像濃度および画像均一性は比較例(従来の前処理方法)
と同様lこ良好な結果が得られた。As shown in Table 2, the image density and image uniformity of the photoreceptor according to the second embodiment are comparative examples (conventional pretreatment method).
Similar good results were obtained.
またこの第2の実施例による感光体は比較例に比べてよ
り殴れた密着性が得られた。これは水和酸化物層とSe
蒸着層との密着性が良いためと考えられる。第2の実施
例の感度および残留電位は比較例と同レベルであった。Furthermore, the photoreceptor according to the second example had better adhesion than the comparative example. This is a hydrated oxide layer and Se
This is thought to be due to good adhesion with the vapor deposited layer. The sensitivity and residual potential of the second example were at the same level as the comparative example.
また通常の複写サイクルを300回繰り返した後の実施
例の帯電低下量および残留電位は低いレベルであり、比
較例のそれらと比べても同じレベルである。Further, the charge reduction amount and residual potential of the example after repeating the normal copying cycle 300 times are at a low level, and are at the same level as those of the comparative example.
この発明によれば感光体の製造工程における蒸着前の基
体を高温水に浸漬、基体表面に水蒸気の吹付けなどによ
る洗浄処理を施して基体表面に水和酸化物層を形成させ
ることにより短時間で良好な洗浄効果が得られる。また
同時に得られる水和酸化物層により基体と蒸着膜との密
着性は著しく向上した。前処理工程として従来性なって
いた熱酸化工程を省略することができるため前処理工程
は短縮化され、作業工数も減少した。According to this invention, in the process of manufacturing a photoreceptor, a substrate before vapor deposition is immersed in high-temperature water, and a cleaning treatment such as spraying water vapor is applied to the substrate surface to form a hydrated oxide layer on the substrate surface in a short period of time. A good cleaning effect can be obtained. Furthermore, the adhesion between the substrate and the deposited film was significantly improved due to the hydrated oxide layer obtained at the same time. Since the conventional thermal oxidation process can be omitted as a pretreatment process, the pretreatment process is shortened and the number of work steps is also reduced.
第1図はこの発明の第1の実施例に使用する処理槽装置
の縦断面図、第2図はこの発明の第2の実施例に使用す
る処理槽装置の縦断面図である。
1.11:側壁面% 2,12:電気ヒータ、3:ヒー
タ電源、4:温度制御回路、6:攪拌羽根、7.14:
基体、8.13:支持器、15:水蒸気導入管、第 1
区FIG. 1 is a longitudinal sectional view of a processing tank device used in a first embodiment of the invention, and FIG. 2 is a longitudinal sectional view of a processing tank device used in a second embodiment of the invention. 1.11: Side wall surface % 2,12: Electric heater, 3: Heater power supply, 4: Temperature control circuit, 6: Stirring blade, 7.14:
Base, 8.13: Supporter, 15: Steam introduction pipe, 1st
Ward
Claims (1)
面にセレンまたはセレン合金を真空蒸着して感光層を形
成する電子写真感光体の製造方法において、感光層を形
成する前の前処理工程として基体を温度90℃以上の水
系処理による洗浄を行なって基体表面に水和酸化物を形
成させ、この水和酸化物を介して感光膜を被着したこと
を特徴とする電子写真感光体の製造方法。1) In a method for manufacturing an electrophotographic photoreceptor in which a photosensitive layer is formed by vacuum-depositing selenium or a selenium alloy on the surface of a substrate made of aluminum or an aluminum alloy, the substrate is heated to a temperature of 90°C as a pretreatment step before forming the photosensitive layer. 1. A method for producing an electrophotographic photoreceptor, which comprises washing the substrate with an aqueous treatment at a temperature of at least .degree.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17234888A JPH0222664A (en) | 1988-07-11 | 1988-07-11 | Production of electrophotographic sensitive body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17234888A JPH0222664A (en) | 1988-07-11 | 1988-07-11 | Production of electrophotographic sensitive body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0222664A true JPH0222664A (en) | 1990-01-25 |
Family
ID=15940241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17234888A Pending JPH0222664A (en) | 1988-07-11 | 1988-07-11 | Production of electrophotographic sensitive body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0222664A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57104938A (en) * | 1980-12-22 | 1982-06-30 | Canon Inc | Image forming member for electrophotography |
JPS5814841A (en) * | 1981-07-20 | 1983-01-27 | Ricoh Co Ltd | Production of photoreceptor for electrophotography |
JPS58173750A (en) * | 1982-04-05 | 1983-10-12 | Hitachi Ltd | Electrophotographic receptor and its manufacture |
JPS60174865A (en) * | 1984-02-15 | 1985-09-09 | Showa Alum Corp | Surface treatment of aluminum substrate for forming thin film |
-
1988
- 1988-07-11 JP JP17234888A patent/JPH0222664A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57104938A (en) * | 1980-12-22 | 1982-06-30 | Canon Inc | Image forming member for electrophotography |
JPS5814841A (en) * | 1981-07-20 | 1983-01-27 | Ricoh Co Ltd | Production of photoreceptor for electrophotography |
JPS58173750A (en) * | 1982-04-05 | 1983-10-12 | Hitachi Ltd | Electrophotographic receptor and its manufacture |
JPS60174865A (en) * | 1984-02-15 | 1985-09-09 | Showa Alum Corp | Surface treatment of aluminum substrate for forming thin film |
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