JPH0221732U - - Google Patents
Info
- Publication number
- JPH0221732U JPH0221732U JP10036288U JP10036288U JPH0221732U JP H0221732 U JPH0221732 U JP H0221732U JP 10036288 U JP10036288 U JP 10036288U JP 10036288 U JP10036288 U JP 10036288U JP H0221732 U JPH0221732 U JP H0221732U
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- high concentration
- impurity region
- concentration impurity
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10036288U JPH0221732U (ko) | 1988-07-28 | 1988-07-28 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10036288U JPH0221732U (ko) | 1988-07-28 | 1988-07-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0221732U true JPH0221732U (ko) | 1990-02-14 |
Family
ID=31328370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10036288U Pending JPH0221732U (ko) | 1988-07-28 | 1988-07-28 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0221732U (ko) |
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1988
- 1988-07-28 JP JP10036288U patent/JPH0221732U/ja active Pending