JPH02202430A - Manufacture of semi-conductive roll - Google Patents

Manufacture of semi-conductive roll

Info

Publication number
JPH02202430A
JPH02202430A JP2331089A JP2331089A JPH02202430A JP H02202430 A JPH02202430 A JP H02202430A JP 2331089 A JP2331089 A JP 2331089A JP 2331089 A JP2331089 A JP 2331089A JP H02202430 A JPH02202430 A JP H02202430A
Authority
JP
Japan
Prior art keywords
roll
conductive
tube
semi
high molecular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2331089A
Other languages
Japanese (ja)
Inventor
Saburo Hayashi
三郎 林
Hiroyasu Kato
加藤 宏泰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Riko Co Ltd
Original Assignee
Sumitomo Riko Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Riko Co Ltd filed Critical Sumitomo Riko Co Ltd
Priority to JP2331089A priority Critical patent/JPH02202430A/en
Publication of JPH02202430A publication Critical patent/JPH02202430A/en
Pending legal-status Critical Current

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  • Dry Development In Electrophotography (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Discharging, Photosensitive Material Shape In Electrophotography (AREA)

Abstract

PURPOSE:To obtain a stabilized electric resistance level and prepare a semi- conductive high molecular layer without surface pollution with an eluted material by using a semi-conductive high molecular composition dispersed in the complex ionized state of a conductive material in a matrix. CONSTITUTION:A high molecular compound having an ether bonding in repeating unit is used as a matrix, and a semi-conductive high molecular composition containing 0.1-10pts.wt. of perchlorate to 100pts.wt. of said matrix component is prepared. A conductive high molecular composition is formed into a film tube shape and a roll having a conductive elastic material layer 3 formedon the outer periphery of a shaft is manufactured. A tube-shaped molding material is covered around a roll having a conductive elastic material layer 3, while air is blown into the tube-shaped molded material. In other words, air is introduced into a tube 10 to expand the same into a cylindrical shape. Then, the tube 10 is moved and covered on the outer periphery of a shaft 10 having the conductive elastic material layer 3 to manufacture a semi-conductive roll having a filmy semi-conductive high molecular layer 2.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、電子写真複写機等に用いられる半導電性ロ
ールの製法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing semiconductive rolls used in electrophotographic copying machines and the like.

〔従来の技術〕[Conventional technology]

電子写真複写機の帯電ロールや現像ロール、あるいはフ
ィルム製造装置のフィルム搬送ロール等の半導電性ロー
ルは、一般に、第3図に示すように、金属製の軸体1の
外周に直接半導電性高分子層2が形成された単層構造か
、あるいは第4図に示すように、軸体1の外周にまず導
電性の樹脂やゴムからなる導電性弾性体層3が形成され
その外側に半導電性高分子層2が形成された2層構造を
とる。
Generally, semiconductive rolls such as charging rolls and developing rolls of electrophotographic copying machines, or film conveying rolls of film manufacturing equipment, have a semiconductive layer directly attached to the outer periphery of a metal shaft 1, as shown in FIG. Either a single-layer structure in which a polymer layer 2 is formed, or a conductive elastic layer 3 made of conductive resin or rubber is first formed on the outer periphery of the shaft body 1, and a half-layer structure is formed on the outside, as shown in Fig. 4. It has a two-layer structure in which a conductive polymer layer 2 is formed.

これらのうち、2層構造の半導電性ロールは、例えば、
つぎのようにして得られる。すなわち、まず軸体1の外
周に導電性弾性体物質を押し出し成形するか、あるいは
軸体1を円柱状空洞内に同軸的に配置させた状態で金型
成形をして軸体1の外周に導電性弾性体層3を形成する
。つぎに、この導電性弾性体N3の外周に半導電性高分
子組成物を押し出し成形することによって得られる。し
かし、このような押し出し成形では半導電性高分子層2
を一定の厚みより簿(できないため、高度に静電容量が
規制されたロールを得ることができない、そこで、この
ような場合には、半導電性高分子組成物を溶媒に溶かし
てデイツプ液とし、この液に上記導電性弾性体層3が形
成された軸体1を浸漬して皮膜を形成させたのち乾燥し
て半導電性高分子層2を形成する方法が用いられる。
Among these, the two-layer structure semiconductive roll is, for example,
It can be obtained as follows. That is, first, a conductive elastic material is extruded around the outer periphery of the shaft 1, or the shaft 1 is placed coaxially within a cylindrical cavity and then molded with a mold to form a conductive elastic material around the outer periphery of the shaft 1. A conductive elastic layer 3 is formed. Next, a semiconductive polymer composition is extruded around the outer periphery of this conductive elastic body N3. However, in such extrusion molding, the semiconductive polymer layer 2
Therefore, it is not possible to obtain a roll with highly regulated capacitance because it is not possible to obtain a roll with a highly regulated capacitance. A method is used in which the shaft 1 on which the conductive elastic layer 3 is formed is immersed in this liquid to form a film, and then dried to form the semiconductive polymer layer 2.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、上記ディッピング法では、均一厚みの皮
膜を形成することが困難であり、また、デイツプ液の粘
度や浸漬時間等の設定が困難であるという難点を有する
However, the dipping method described above has the disadvantage that it is difficult to form a film of uniform thickness, and it is also difficult to set the viscosity of the dipping liquid, the dipping time, etc.

そして、皮膜となる半導電性高分子組成物としては、従
来から、一定の弾性を有するゴムや樹脂をマトリックス
とし、この中に、カーボン、金属粉等の導電性粒子を分
散含有させたものが知られているが、この組成物は、マ
トリックス中に分散された導電性粒子同士が接触して導
電性を発現するため、必ずしも均一な粒子間接触が得ら
れず、適正な電気抵抗レベルのものが得られにくいとい
う難点を有する。しかも、成形後に加圧を受けた場合に
も粒子間接触の程度が変化して電気抵抗が変化するため
、使用時に電気抵抗レベルが不安定になりやすいという
問題もある。
Conventionally, the semiconductive polymer composition that becomes the film has a matrix of rubber or resin with a certain elasticity, and conductive particles such as carbon or metal powder are dispersed in this matrix. However, in this composition, the conductive particles dispersed in the matrix contact each other to develop conductivity, so it is not always possible to obtain uniform contact between the particles, and it is difficult to achieve an appropriate level of electrical resistance. The problem is that it is difficult to obtain. Moreover, even when pressurized after molding, the degree of contact between particles changes and the electrical resistance changes, so there is a problem that the electrical resistance level tends to become unstable during use.

そこで、半導電性をより制御しやすい組成物として、最
近、界面活性剤を主成分とする帯電防止剤を練り込んだ
ものや、テトラブトキシホスフェート(TBXP)等の
ような高誘電性の液体を練り込んだもの等が用いられる
ようになっている。
Therefore, recently, compositions incorporating antistatic agents mainly composed of surfactants and highly dielectric liquids such as tetrabutoxyphosphate (TBXP) have been developed as compositions whose semiconductivity can be more easily controlled. Those that have been kneaded are now used.

しかしながら、これらの組成物は、電荷の流れが、系に
存在する水分量によって左右されるため一定の°水分存
在下で低い電気抵抗値を得ることができず、しかも低湿
度の環境下では抵抗値の上昇が大きいという難点を有す
る。しかも、これらの組成物は、導電効果が小さいため
比較的多量に使用される関係上、先に述べたようにデイ
ツプ液中に軸体1を浸漬して皮膜を形成し乾燥する場合
、皮膜乾燥時に組成物内から導電性介在物である界面活
性剤や高誘電性液体が滲み出るため、乾燥条件をきめ細
かく選択しなければ得られるロール表面が汚染されやす
いという問題もある。
However, these compositions cannot obtain low electrical resistance values in the presence of a certain amount of moisture because the flow of charge depends on the amount of water present in the system, and furthermore, the resistance decreases in low humidity environments. The problem is that the increase in value is large. Furthermore, since these compositions have a small conductive effect and are used in relatively large amounts, when the shaft body 1 is immersed in the dip liquid to form a film and then dried as described above, the film drying process is difficult. Since conductive inclusions such as surfactants and highly dielectric liquids sometimes ooze out from within the composition, there is also the problem that the resulting roll surface is likely to be contaminated unless the drying conditions are carefully selected.

この発明は、このような事情に迄みなされたもので、全
体として湿度や加圧等に左右されない安定した電気抵抗
レベルを有し、かつ高度に静電容量が規制された2層構
造の半導電性ロールを、表面汚染を生じさせることなく
簡単に製造することができるような半導電性ロールの製
法の提供をその目的とする。
This invention was developed in light of these circumstances, and is a two-layer half-layer with a stable electrical resistance level unaffected by humidity, pressure, etc. as a whole, and a highly regulated capacitance. The purpose of the present invention is to provide a method for manufacturing a semi-conductive roll that allows the conductive roll to be easily manufactured without causing surface contamination.

〔問題点を解決するための手段〕[Means for solving problems]

上記の目的を達成するため、この発明の半導電性ロール
の製法は、繰り返し単位中にエーテル結合を有する高分
子化合物をマトリックスとし、このマトリックス成分1
00重量部に対し過塩素酸塩が0.1〜10重量部含有
されている半導電性高分子組成物を準備する工程と、上
記半導電性高分子組成物を薄膜のチューブ状に成形する
工程と、軸体の外周に導電性弾性体層が形成されたロー
ルを準備する工程と、前記チューブ状成形体を、チュー
ブ状成形体内に空気を吹き込みながら上記導電性弾性体
層が形成されたロールに外嵌する工程とを備えたという
構成をとる。
In order to achieve the above object, the method for manufacturing a semiconductive roll of the present invention uses a polymer compound having an ether bond in the repeating unit as a matrix, and this matrix component 1
A step of preparing a semiconductive polymer composition containing 0.1 to 10 parts by weight of perchlorate per 00 parts by weight, and molding the semiconductive polymer composition into a thin film tube shape. a step of preparing a roll having a conductive elastic layer formed on the outer periphery of the shaft body; and a step of preparing a roll having a conductive elastic layer formed on the outer periphery of the shaft body; The structure includes a step of externally fitting the roll onto the roll.

〔作用〕[Effect]

すなわち、本発明者らは、湿度等に左右されない安定し
た電気抵抗レベルを有し、高度に静電容量が制限された
半導電性ロールを、表面汚染を生じさせることなく得る
ために一連の研究を行った。その結果、半導電性高分子
層を形成する半導電性高分子組成物として、繰り返し単
位中にエーテル結合を有する高分子化合物(ゴム、樹脂
、これらの混合物を含む)をマトリックスとし、このマ
トリックス中に過塩素酸塩を特定量だけ配合したものを
用いると、上記マトリックス中の、エーテル結合を構成
する酸素原子の非共有電子対(ローンペア)が過塩素酸
塩に作用して、過塩素酸塩をプラスの金属イオンとマイ
ナスの過塩素酸イオンとに解離させるためか、水分の介
在なしに導電性のイオン物質が形成され、しかも上記各
イオンがマトリックス内で固定され組成物表面に滲み出
すことがないことをつきとめた。そして、この半導電性
高分子組成物は、非常に安定な電気抵抗レベルを示すの
みならず、マトリックス成分の配合割合が多いため機械
的強度に優れ、薄膜のチューブに成形して取り扱うこと
ができることがわかった。したがって、このチューブを
、チューブ内に空気を吹き込むことによって中空状に保
ちながら導電性弾性体層外周に被せるよう゛にすると、
簡単に静電容量値の低い半導電性ロールを得ることがで
きることを見いだしこの発明に到達した。
That is, the present inventors conducted a series of studies in order to obtain a semiconductive roll with a stable electrical resistance level unaffected by humidity, etc., and with highly limited capacitance, without causing surface contamination. I did it. As a result, as a semiconductive polymer composition forming a semiconductive polymer layer, a polymer compound (including rubber, resin, and a mixture thereof) having an ether bond in the repeating unit is used as a matrix, and in this matrix, When a specific amount of perchlorate is mixed in, the lone pair of oxygen atoms in the ether bond in the matrix acts on the perchlorate, and the perchlorate Probably because the salt is dissociated into positive metal ions and negative perchlorate ions, a conductive ionic substance is formed without the intervention of water, and each of the above ions is fixed within the matrix and oozes out to the surface of the composition. I found out that there is nothing wrong with that. This semiconductive polymer composition not only exhibits a very stable electrical resistance level, but also has excellent mechanical strength due to the high proportion of matrix components, and can be handled by being formed into a thin film tube. I understand. Therefore, if this tube is kept hollow by blowing air into the tube and is placed over the outer periphery of the conductive elastic layer,
The inventors have discovered that it is possible to easily obtain a semiconductive roll with a low capacitance value, and have thus arrived at this invention.

つぎに、この発明の詳細な説明する。Next, the present invention will be explained in detail.

この発明では、第4図に示す2層構造の半導電性ロール
の半導電性高分子層2の形成材料として、繰り返し単位
中にエーテル結合を有する高分子化合物をマトリックス
とし、このマトリックス中に過塩素酸塩が含有された特
殊な半導電性高分子組成物を用いる。
In this invention, as a material for forming the semiconductive polymer layer 2 of the two-layer structure semiconductive roll shown in FIG. 4, a polymer compound having an ether bond in the repeating unit is used as a matrix, A special semiconducting polymer composition containing chlorate is used.

上記繰り返し単位中にエーテル結合を有する高分子化合
物としては、ポリエチレンオキサイド。
The polymer compound having an ether bond in its repeating unit is polyethylene oxide.

ポリプロピオンオキサイド、エピクロルヒドリンゴム、
エピクロルヒドリン−エチレンオキサイド共重合ゴム、
ウレタン樹脂、ナイロン−ウレタン共重合樹脂等があげ
られ、これらは単独で用いても2種以上を併用してもよ
い、なお、これらのうち、特にナイロン−ウレタン共重
合樹脂(ナイロン/ウレタンが重量基準で90/10〜
50150のもの)が好適である。
polypropion oxide, epichlorohydrin rubber,
epichlorohydrin-ethylene oxide copolymer rubber,
Examples include urethane resins, nylon-urethane copolymer resins, etc., and these may be used alone or in combination of two or more. Among these, nylon-urethane copolymer resins (nylon/urethane 90/10~
50150) is suitable.

また、上記マトリックス中に含有させる過塩素酸塩とし
ては、過塩素酸ナトリウム、過塩素酸カリウム等があげ
られ、これらも単独で用いても2種以上を併用してもよ
い、これらの過塩素酸塩は下記の一般式で示される。
In addition, examples of the perchlorate to be contained in the matrix include sodium perchlorate, potassium perchlorate, etc. These perchlorates may be used alone or in combination of two or more. The acid salt is represented by the general formula below.

M−(40,(Mは金属原子〕 なお、本発明において、上記過塩素酸塩は、前記マトリ
ックス成分100重量部(以下「部」と略す)に対し0
.1〜50部の範囲内で配合することが必要である。す
なわち、0.1部よりも少ないと実質的に抵抗低下に効
果がなくマトリックス成分と同等の抵抗となり、50部
を超えると詭(なり耐久性に問題が生じるからである。
M-(40, (M is a metal atom) In the present invention, the perchlorate is 0% per 100 parts by weight (hereinafter abbreviated as "parts") of the matrix component.
.. It is necessary to mix within the range of 1 to 50 parts. That is, if it is less than 0.1 part, it is substantially ineffective in lowering the resistance and the resistance becomes the same as that of the matrix component, and if it exceeds 50 parts, it becomes undesirable and a problem arises in durability.

この発明では、上記半導電性高分子組成物を用い、例え
ばつぎのようにして2層構造の半導電性ロール(第4図
参照)を得る。すなわち、まず金属製の軸体1の外周に
、エチレン−プロピレン−ジエンゴム(EPDM)等の
導電性弾性体物質を押し出し成形して導電性弾性体層3
番形成する。
In the present invention, a two-layer structure semiconductive roll (see FIG. 4) is obtained using the above-mentioned semiconductive polymer composition, for example, in the following manner. That is, first, a conductive elastic material such as ethylene-propylene-diene rubber (EPDM) is extruded onto the outer periphery of a metal shaft 1 to form a conductive elastic layer 3.
form a number.

一方、上記過塩素酸塩と前記マトリックス成分である高
分子化合物とを充分に練って粉状混合物として調製した
のち、押し出し成形機を用い、これを薄膜のチューブ状
に押し出し成形する。このチューブは薄膜で保形性に乏
しいため、常態では平たく潰れている。そこで、このチ
ューブを、前記導電性弾性体N3が形成された軸体1の
近傍に同軸的に配置した上で、チューブ10内に、第1
図に矢印Pで示すように、空気を送り込んで円筒状に膨
らませる。そして、矢印Qで示すようにチューブlOを
移動させ、上記導電性弾性体層3が形成された軸体1の
外周に被せて薄膜状の半導電性高分子層2が形成された
半導電性ロールを得るのである。このように、半導電性
高分子組成物を薄膜チューブ化して取り扱うことができ
るのは、この半導電性高分子組成物において導電性物質
(過塩素酸塩)の配合が少なくマトリックス成分の特性
が維持されているからに他ならない。したがつて、この
製法によれば、ディッピング法を用いることなく非常に
薄い半導電性高分子層2を形成することができる。
On the other hand, the perchlorate and the polymer compound as the matrix component are sufficiently kneaded to prepare a powder mixture, and then extruded into a thin film tube using an extrusion molding machine. This tube is a thin film with poor shape retention, so it is flattened under normal conditions. Therefore, this tube is coaxially arranged near the shaft body 1 on which the conductive elastic body N3 is formed, and the first tube is placed inside the tube 10.
As shown by arrow P in the figure, air is pumped in to inflate it into a cylindrical shape. Then, as shown by the arrow Q, the tube lO is moved, and the semiconductive material on which the thin film-like semiconductive polymer layer 2 is formed is placed over the outer periphery of the shaft body 1 on which the conductive elastic layer 3 is formed. You get a roll. In this way, the semiconductive polymer composition can be made into thin film tubes and handled because it contains a small amount of conductive substance (perchlorate) and the characteristics of the matrix component. This is only because it is maintained. Therefore, according to this manufacturing method, a very thin semiconductive polymer layer 2 can be formed without using the dipping method.

なお、上記製法において、半導電性高分子組成物からな
るチューブ10の厚みは、目的とするロールに付与した
い静電容量にもよるが、通常、0゜1〜3mmの範囲内
に設定することが好適である。
In addition, in the above manufacturing method, the thickness of the tube 10 made of the semiconductive polymer composition is usually set within the range of 0°1 to 3 mm, although it depends on the capacitance desired to be imparted to the intended roll. is suitable.

また、チューブ10を膨らませるための空気吹き込み量
は、1〜501!、/秒程度に設定することが好適であ
る。ただし、チューブ10の膜厚がより厚くて柔軟性に
乏しい場合には、そのままでは導電性弾性体層3に被せ
にくいので、第2図に示すように、チューブlOの差し
込み開口と反対側の開口10aを折り畳んで閉じ、その
状態で大量の空気吹き込みを行い、チューブ10を内側
から押し拡げて内径をやや大きくして被せるようにする
ことが好適である。このような場合の空気吹き込み量は
、チューブ10の膜厚にもよるが、0.2〜101/秒
程度に設定することが好適である。
Also, the amount of air blown to inflate the tube 10 is 1 to 501! ,/second. However, if the tube 10 is thicker and less flexible, it will be difficult to cover the conductive elastic layer 3 as it is, so as shown in FIG. It is preferable to fold and close the tube 10a, blow in a large amount of air in this state, and expand the tube 10 from the inside to slightly enlarge the inner diameter and cover the tube 10a. The amount of air blown in such a case is preferably set to about 0.2 to 101/sec, although it depends on the thickness of the tube 10.

このようにして得られた半導電性ロールは、最外層であ
る半導電性弾性体層2において、過塩素酸塩の金属原子
Mと、前記マトリックス成分のエーテル結合を構成する
酸素原子とが配位結合して下記のような錯イオンを形成
しており、ロール表面が半導電性を呈する。
In the semiconductive roll thus obtained, the metal atoms M of the perchlorate and the oxygen atoms constituting the ether bond of the matrix component are arranged in the semiconductive elastic layer 2, which is the outermost layer. They bond to form complex ions as shown below, and the roll surface exhibits semiconductivity.

〜0−J /S+0\ノ このような錯イオンが形成されるのは、上記エーテル結
合を構成する酸素原子の非共有電子対(上記式参照)が
金属原子Mに作用すると考えられる。
~0-J/S+0\no Such a complex ion is formed because the lone pair of electrons (see the above formula) of the oxygen atom constituting the ether bond acts on the metal atom M.

したがって、この半導電性ロールは、半導電性弾性体層
2において水分の介在なしにイオン解離が行われて導電
性が発現されるため、環境に左右されず非常に安定な電
気抵抗レベルを有し、特に、低湿環境下に置いても、電
気抵抗値の上昇が少ないという利点を有する0組成物中
からの導電性物質滲み出しによる表面汚染もない、しか
も、半導電性高分子182が非常に薄いため、ロール表
面の静電容量が高度に規制されるような使用に適してい
る。
Therefore, this semiconductive roll exhibits conductivity through ion dissociation in the semiconductive elastic layer 2 without the presence of moisture, so it has a very stable electrical resistance level regardless of the environment. In particular, it has the advantage that the increase in electrical resistance is small even when placed in a low-humidity environment.There is no surface contamination due to conductive material exuding from the composition, and the semiconductive polymer 182 is extremely Because of its thinness, it is suitable for applications where the roll surface capacitance is highly regulated.

つぎに、実施例について、比較例と併せて説明する。Next, examples will be described together with comparative examples.

〔実施例1〜10、比較例1〜7〕 下記の表に従い、各原料を下記の割合で配合し、各種の
半導電性高分子組成物を得た。そして、この組成物を押
し出し成形して、厚み0.5mm、外径17IIIIa
のチューブを作製した。ただし、組成物のマトリックス
がゴムの場合には、常法に従い加熱加硫を施した。一方
、エチレン−プロピレン−ジエンゴム(EPDM)に導
電性カーボンブラック(商品名ケッチエンブラック酸E
−C1日本イー・シー社製)を配合した導電性ゴム組成
物(硬度40°、体積固有抵抗103Ω・cm)を直径
10mの金属シャフト外周上に押し出し成形し、加硫後
研摩して3am厚の導電性弾性層を備えたロールを形成
した。そして、第1図に示すように、このロールの導電
性弾性層3の外周に、前記半導電性高分子組成物製チュ
ーブ10を被せて半導電性高分子N2を形成し、第3図
に示すような構造のロールを得た。
[Examples 1 to 10, Comparative Examples 1 to 7] According to the table below, each raw material was blended in the following proportions to obtain various semiconductive polymer compositions. Then, this composition was extruded to a thickness of 0.5 mm and an outer diameter of 17IIIa.
A tube was made. However, when the matrix of the composition was rubber, heat vulcanization was performed according to a conventional method. On the other hand, conductive carbon black (trade name: Ketchenblack Acid E) was added to ethylene-propylene-diene rubber (EPDM).
A conductive rubber composition (hardness: 40°, volume resistivity: 103 Ωcm) containing C1 (manufactured by Japan EC Co., Ltd.) is extruded and molded onto the outer periphery of a metal shaft with a diameter of 10 m, and after vulcanization, it is polished to a thickness of 3 am. A roll with a conductive elastic layer was formed. Then, as shown in FIG. 1, the semiconductive polymer composition tube 10 is placed over the outer periphery of the conductive elastic layer 3 of this roll to form a semiconductive polymer N2, and as shown in FIG. A roll with the structure shown was obtained.

上記ロールを用い、温度および湿度の異なる環境下に一
夜以上放置した場合の電気抵抗を測定した。また、ロー
ル内における電気抵抗のばらつきを評価するために、半
導電性高分子層2の外表面の5個所に銀ペーストで10
mm四方の電極を描き(ガード電極付)、金属シャフト
4と上記電極との抵抗を測定した。さらに、下記の方法
に従って耐電圧性、汚染性および耐久性を調べた。
Using the above roll, the electrical resistance was measured when it was left in environments with different temperatures and humidity for more than one night. In addition, in order to evaluate the variation in electrical resistance within the roll, silver paste was applied to five locations on the outer surface of the semiconductive polymer layer 2 for 10 minutes.
A mm square electrode was drawn (with a guard electrode), and the resistance between the metal shaft 4 and the electrode was measured. Furthermore, voltage resistance, stain resistance, and durability were examined according to the following methods.

く耐電圧性〉 金属ロール(外径30薗)に上記ロールを一定荷重で密
着回転させ、上記ロールと金属ロール間に直流電圧を印
加し、火花放電の発生する電圧を調べた。
Voltage Resistance> The roll was rotated in close contact with a metal roll (outer diameter: 30 mm) under a constant load, a DC voltage was applied between the roll and the metal roll, and the voltage at which spark discharge occurred was examined.

〈汚染性〉 上記ロールを、市販の電子写真複写機の有機感光体に一
定荷重で押しつけ、32°c×85%RHの雰囲気下に
72時間放置して感光体表面の状態を観察し、汚染の有
無を調べた。
<Stainability> The above roll was pressed against the organic photoreceptor of a commercially available electrophotographic copying machine with a constant load, left in an atmosphere of 32°C x 85% RH for 72 hours, and the condition of the photoreceptor surface was observed. The presence or absence of was investigated.

〈耐久性〉 金属ロール(外径30mm)に上記ロールを一定荷重で
押しつけ、60rpmの回転数で10万回の耐久試験を
行った。
<Durability> The roll was pressed against a metal roll (outer diameter 30 mm) under a constant load, and a durability test was conducted 100,000 times at a rotation speed of 60 rpm.

これらの結果を下記の表に併せて示す。These results are also shown in the table below.

(以下余白) 上記の結果から、実施例品はいずれも電気抵抗値が環境
に殆ど左右されないことがわかる。しかもロール内での
抵抗のばらつきが小さい。また、耐電圧性、汚染性およ
び耐久性のいずれの性能も良好である。
(The following is a blank space) From the above results, it can be seen that the electrical resistance values of all the example products are hardly influenced by the environment. Moreover, the variation in resistance within the roll is small. Moreover, the performance of voltage resistance, stain resistance, and durability is good.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明の半導電性ロールの製法によれ
ば、半導電性高分子組成物としてマトリックス中で導電
性物質(過塩素酸塩)が錯イオン化した状態で分散され
た特殊な組成物を用いるため、非常に安定な電気抵抗レ
ベルを示すとともに、滲み出し物質による表面汚染のな
い半導電性高分子層を得ることができる。しかも、半導
電性高分子層形成材料である組成物において導電性物質
の配合量が少ないため、組成物を薄膜チューブ化して取
り扱うことができ、ディッピングによらず上記チューブ
を、空気を吹き込みながら導電性弾性体層に被せるだけ
で簡単に2N構造の半導電性ロールを得ることができる
As described above, according to the method for manufacturing a semiconductive roll of the present invention, a special composition in which a conductive substance (perchlorate) is dispersed in a complex ionized state in a matrix as a semiconductive polymer composition is used. Because of the use of a material, it is possible to obtain a semiconductive polymer layer that exhibits a very stable electrical resistance level and is free from surface contamination due to oozing substances. Moreover, since the amount of conductive substance blended in the composition, which is a material for forming a semiconductive polymer layer, is small, the composition can be made into a thin film tube and handled. A semiconductive roll with a 2N structure can be easily obtained by simply covering the elastic material layer.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例における半導電性高分子層
形成の手順を示す説明図、第2図は異なる手順を示す説
明図、第3図は半導電性ロールの一般的な構成を示す縦
断面図、第4図は他の構成を示す縦断面図である。 1・・・軸体 2・・・半導電性高分子層 3・・・導
電性弾性体層 10・・・チューブ 特許出願人 東海ゴム工業株式会社 代理人  弁理士 西 藤 征 彦
FIG. 1 is an explanatory diagram showing the procedure for forming a semiconductive polymer layer in one embodiment of the present invention, FIG. 2 is an explanatory diagram showing a different procedure, and FIG. 3 is an explanatory diagram showing the general structure of a semiconductive roll. FIG. 4 is a longitudinal sectional view showing another configuration. 1... Shaft body 2... Semi-conductive polymer layer 3... Conductive elastic layer 10... Tube patent applicant Tokai Rubber Industries Co., Ltd. agent Patent attorney Yukihiko Nishifuji

Claims (1)

【特許請求の範囲】[Claims] (1)繰り返し単位中にエーテル結合を有する高分子化
合物をマトリックスとし、このマトリックス成分100
重量部に対し過塩素酸塩が0.1〜50重量部含有され
ている半導電性高分子組成物を準備する工程と、上記半
導電性高分子組成物を薄膜のチューブ状に成形する工程
と、軸体の外周に導電性弾性体層が形成されたロールを
準備する工程と、前記チューブ状成形体を、チューブ状
成形体内に空気を吹き込みながら上記導電性弾性体層が
形成されたロールに外嵌する工程とを備えたことを特徴
とする半導電性ロールの製法。
(1) A polymer compound having an ether bond in the repeating unit is used as a matrix, and this matrix component 100
A step of preparing a semiconductive polymer composition containing 0.1 to 50 parts by weight of perchlorate, and a step of molding the semiconductive polymer composition into a thin film tube shape. a step of preparing a roll having a conductive elastic layer formed on the outer periphery of the shaft body; and a step of preparing a roll having the conductive elastic layer formed thereon while blowing air into the tubular molded body. A method for manufacturing a semiconductive roll, comprising the step of fitting the roll onto the outside of the roll.
JP2331089A 1989-01-31 1989-01-31 Manufacture of semi-conductive roll Pending JPH02202430A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2331089A JPH02202430A (en) 1989-01-31 1989-01-31 Manufacture of semi-conductive roll

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2331089A JPH02202430A (en) 1989-01-31 1989-01-31 Manufacture of semi-conductive roll

Publications (1)

Publication Number Publication Date
JPH02202430A true JPH02202430A (en) 1990-08-10

Family

ID=12107018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2331089A Pending JPH02202430A (en) 1989-01-31 1989-01-31 Manufacture of semi-conductive roll

Country Status (1)

Country Link
JP (1) JPH02202430A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0602395A2 (en) * 1992-12-16 1994-06-22 Tokai Rubber Industries, Ltd. Roll including foam body and method of producing the roll

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0602395A2 (en) * 1992-12-16 1994-06-22 Tokai Rubber Industries, Ltd. Roll including foam body and method of producing the roll
EP0602395A3 (en) * 1992-12-16 1995-05-24 Tokai Rubber Ind Ltd Roll including foam body and method of producing the roll.
EP0779562A1 (en) * 1992-12-16 1997-06-18 Tokai Rubber Industries, Ltd. Roll including foam body and method of producing the roll
US6096395A (en) * 1992-12-16 2000-08-01 Tokai Rubber Industries, Ltd. Roll including foam body and method of producing the roll

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