JPH02202227A - D-a converter - Google Patents

D-a converter

Info

Publication number
JPH02202227A
JPH02202227A JP2134189A JP2134189A JPH02202227A JP H02202227 A JPH02202227 A JP H02202227A JP 2134189 A JP2134189 A JP 2134189A JP 2134189 A JP2134189 A JP 2134189A JP H02202227 A JPH02202227 A JP H02202227A
Authority
JP
Japan
Prior art keywords
resistance
converter
section
normally closed
resistance value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2134189A
Other languages
Japanese (ja)
Inventor
Masako Suzuki
鈴木 眞子
Katsuya Ishikawa
勝哉 石川
Chikara Tsuchiya
主税 土屋
Yasunari Yamamoto
山本 康成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu VLSI Ltd
Fujitsu Ltd
Original Assignee
Fujitsu VLSI Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu VLSI Ltd, Fujitsu Ltd filed Critical Fujitsu VLSI Ltd
Priority to JP2134189A priority Critical patent/JPH02202227A/en
Publication of JPH02202227A publication Critical patent/JPH02202227A/en
Pending legal-status Critical Current

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  • Analogue/Digital Conversion (AREA)

Abstract

PURPOSE:To easily realize an R-2R ladder type resistance circuit by inserting a normally closed switch for resistance correction in series with an R resistance section of the R-2R ladder type resistance circuit and selecting the sum of the resistance of resistors of an 2R resistance section and a resistance of a changeover switch to be nearly twice the sum of the resistance of the resistors of the R resistance section and the resistance of normally closed switches. CONSTITUTION:Normally closed switches SWC1-SWCn for resistance correction are provided to each R resistance section of the R-2R ladder type resistance circuit. Then the resistance of the 2R resistance section up to the changeover switches SW1-SWn is selected twice the resistance of the R resistor section up to the normally closed switches SWC1-SWCn. Thus, even when number of bits is increased, since the size of a D-A converter is only increased proportional to the bit number, the D-A converter is easily realized by employing a multi-bit D-A converter.

Description

【発明の詳細な説明】 [概要] R−2Rはしご形抵抗回路を用いたD−A変換器に関し
、 多数ビットのデジタル信号をアナログ信号に変換するの
に適したR−2Rはしご形抵抗回路を用いたD−A変換
器を提供することことを目的とし、R−2Rはしご形抵
抗回路の2R抵抗部に、入力デジタル信号に応じて切換
えられる切換スイッチが直列に挿入されたD−A変換器
において、前記R−2Rはしご形抵抗回路のR抵抗部に
、抵抗値補正用の常閉スイッチが直列に挿入され、前記
2R抵抗部の抵抗の抵抗値と前記切換スイッチの抵抗値
の合計値が、前記R抵抗部の抵抗の抵抗値と前記常閉ス
イッチの抵抗値の合計値のほぼ2倍であるように構成す
る。
[Detailed Description of the Invention] [Summary] Regarding a D-A converter using an R-2R ladder resistor circuit, the present invention relates to a D-A converter using an R-2R ladder resistor circuit suitable for converting a multi-bit digital signal into an analog signal. A D-A converter in which a changeover switch that is switched according to an input digital signal is inserted in series in the 2R resistance section of an R-2R ladder resistance circuit. In this case, a normally closed switch for resistance value correction is inserted in series with the R resistance part of the R-2R ladder type resistance circuit, and the total value of the resistance value of the resistor of the 2R resistance part and the resistance value of the changeover switch is , the resistance value of the resistor of the R resistance section and the resistance value of the normally closed switch are approximately twice the sum of the resistance values.

[産業上の利用分野] 本発明はR−2Rはしご形抵抗回路を用いたD−A変換
器に関する。
[Industrial Application Field] The present invention relates to a DA converter using an R-2R ladder resistance circuit.

[従来の技術] 従来のR−2Rはしご形抵抗回路を用いたD−A変換器
の一例を第6図に示す。
[Prior Art] FIG. 6 shows an example of a DA converter using a conventional R-2R ladder resistance circuit.

入力電圧■、Nは、R−2Rはしご形抵抗回路の初段の
R抵抗部と2R抵抗部の接続点に入力される。R−2R
はしご形抵抗回路の各2R抵抗部には、変換されるべき
デジタル信号のビット信号81〜Bnに応じて切換えら
れる切換スイッチSW1〜SWnが直列に挿入されてい
る。切換スイッチSW1〜S W nは、ビット信号8
1〜Bnに応じて、各2R抵抗部の抵抗2Rをオペアン
プOPの正入力端に接続するか負入力端に接続するかを
切換えるものである。すなわち、切換スイッチSW1〜
SWnの端子t a 1〜t a nは各抵抗2Rに接
続され、端子tbl〜tbnは共通接続されて接地され
ると共にオペアンプOPの正入力端に接続され、端子t
cl〜tcnは共通接続されてオペアンプoPの負入力
端に接続されている。R−2Rはしご形抵抗回路の最終
段の2R抵抗部は常閉スイッチSWn+1を介して接地
されると共にオペアンプOPの正入力端に接続されてい
る。オペアンプOPの負入力端と出力端間には抵抗Rが
挿入されている。アナログ変換された出力電圧V01J
TはオペアンプOPから出力される。
The input voltages (1) and N are input to the connection point between the first-stage R resistance section and the 2R resistance section of the R-2R ladder resistance circuit. R-2R
Changeover switches SW1 to SWn, which are switched according to bit signals 81 to Bn of the digital signal to be converted, are inserted in series in each 2R resistance section of the ladder type resistance circuit. Changeover switches SW1 to SWn are bit signals 8
1 to Bn, it is switched whether the resistor 2R of each 2R resistance section is connected to the positive input terminal or the negative input terminal of the operational amplifier OP. That is, selector switch SW1~
The terminals t a 1 to t a n of SWn are connected to each resistor 2R, and the terminals tbl to tbn are commonly connected and grounded, and are also connected to the positive input terminal of the operational amplifier OP, and the terminal t
cl to tcn are commonly connected and connected to the negative input terminal of the operational amplifier oP. The final stage 2R resistance section of the R-2R ladder resistance circuit is grounded via a normally closed switch SWn+1 and connected to the positive input terminal of the operational amplifier OP. A resistor R is inserted between the negative input terminal and the output terminal of the operational amplifier OP. Analog converted output voltage V01J
T is output from the operational amplifier OP.

アナログ信号に変換されるべきデジタル信号の各ビット
に応じて切換スイッチSWI〜S W n 全切換える
0例えば、デジタル信号が「111・・・1」であれば
、切換スイッチSWI、SW2、SW3、・・・、S 
W nの端子tal、ta2、t a 3、−・tan
が端子tcl 〜tc2、tc3、−・−tcnに接続
されるように切換える。このようにすることによりオペ
アンプOPからデジタル信号に応じたアナログ信号■。
Depending on each bit of the digital signal to be converted into an analog signal, the changeover switches SWI to SW n all switch to 0. For example, if the digital signal is "111...1", the changeover switches SWI, SW2, SW3, . ..., S
W n terminals tal, ta2, ta 3, -・tan
are connected to terminals tcl to tc2, tc3, ---tcn. By doing this, an analog signal (■) corresponding to the digital signal from the operational amplifier OP is generated.

υ↑が出力端から出力される。υ↑ is output from the output terminal.

R−2Rはしご形抵抗回路を用いた従来のD−A変換器
の他の例を第7図に示す、この例では切換スイッチS 
W 1〜S W nの端子tb1〜tbnは接地され、
端子tel〜tcnは入力電圧■、が入力する入力端に
接続されている。オペアンプOPの正入力端は接地され
、負入力端はR−2Rはしご形抵抗回路の最終段のR抵
抗部に接続されている。オペアンプOPの負入力端と出
力端間には抵抗RFが挿入されている。
Another example of a conventional D-A converter using an R-2R ladder resistance circuit is shown in FIG.
Terminals tb1 to tbn of W1 to SWn are grounded,
The terminals tel to tcn are connected to an input terminal to which an input voltage . The positive input terminal of the operational amplifier OP is grounded, and the negative input terminal is connected to the final stage R resistance section of the R-2R ladder resistance circuit. A resistor RF is inserted between the negative input terminal and output terminal of the operational amplifier OP.

このD−A変換器においても、アナログ信号に変換され
るべきデジタル信号の各ビットに応じて切換スイッチS
WI〜S W nを切換えると、オペアンプOPからデ
ジタル信号に応じたアナログ信号V。LITが出力端か
ら出力される。
In this D-A converter as well, the changeover switch S is set according to each bit of the digital signal to be converted into an analog signal.
When WI to S W n are switched, an analog signal V corresponding to the digital signal from the operational amplifier OP is generated. LIT is output from the output end.

[発明が解決しようとする課題] しかしながら、これら従来のD−A変換器の場合、ビッ
ト数が多くなると製造が困難になるという問題があった
[Problems to be Solved by the Invention] However, in the case of these conventional D-A converters, there is a problem in that as the number of bits increases, manufacturing becomes difficult.

例えば第6図のD−A変換器の場合で説明すると、デジ
タル信号が正しくアナログ信号に変換されるためには、
R−2Rはしご形抵抗回路として正しく動作しなければ
ならないが、そのためには、各2R抵抗部の抵抗2Rの
端子、すなわち、各切換スイッチSW1〜SWnの端子
ta1〜tanの電位が一定でなければならない、今、
入力端子■、から電流lが流れ込んだとすると、第1段
のR抵抗部及び2R抵抗部にはそれぞれ電流i / 2
が流れ、第2段のR抵抗部及び2R抵抗部にはそれぞれ
電流i/22が流れ、第3段のR抵抗部及び2R抵抗部
にはそれぞれ電流i/23が流れ、・・・、第n段のR
抵抗部及び2R抵抗部にはそれぞれ電流l/21が流れ
る。各切換スイッチSWI〜S W nの端子tal〜
janの電位を一定にするために、切換スイッチSWI
〜S W nの端子間の抵抗の比を調節する。すなわち
、切換スイッチSW1〜SWnの抵抗をr 1〜r n
とすると、r I X i / 2 = r 2 X 
i / 22= r 3 X i / 2 ’ = r n X  i / 2 ” なる式が成立するように抵抗r1〜rnの比を次のごと
く調節しなければならなかった。
For example, in the case of the D-A converter shown in Figure 6, in order for a digital signal to be correctly converted into an analog signal,
The R-2R ladder resistance circuit must operate correctly, but in order to do so, the potentials of the terminals of the resistor 2R in each 2R resistance section, that is, the terminals ta1 to tan of the changeover switches SW1 to SWn, must be constant. Not now,
Assuming that a current l flows into the input terminal ■, the current i/2 flows into the R resistance section and the 2R resistance section of the first stage, respectively.
flows, current i/22 flows through the R resistance section and 2R resistance section of the second stage, current i/23 flows through the R resistance section and 2R resistance section of the third stage, and so on. n stage R
A current 1/21 flows through each of the resistance section and the 2R resistance section. Terminal tal of each changeover switch SWI~SWn
In order to keep the potential of jan constant, selector switch SWI
~Adjust the ratio of resistances between the terminals of S W n. That is, the resistances of the changeover switches SW1 to SWn are r1 to rn
Then, r I X i / 2 = r 2
The ratio of the resistors r1 to rn had to be adjusted as follows so that the following formula holds: i/22=r3Xi/2'=rnXi/2''.

rl:r2:r3: ・・・: rn =1:2:22 : ・・・=211−1このようにR
−2Rはしご形抵抗回路として正しく動作させるために
は、切換スイッチSWI〜SWnの抵抗r1〜rnを後
段になるほど2の指数倍で増加させなければならない、
このためD−A変換器のビット数が多くなると後段の切
換スイッチの抵抗が極めて大きくなるという問題があっ
た0例えば16ビツトのD−A変換器の場合、スイッチ
5W16の抵抗r16は、スイッチSWIの抵抗r1の
2”(=32768倍)にもなってしまう、特にD−A
変換器を半導体装置として構成する場合、後段の切換ス
イッチに必要な面積が非常に大きくなってしまい、実現
不可能になるという問題があった。
rl:r2:r3: ...: rn =1:2:22: ...=211-1 Like this R
- In order to operate correctly as a 2R ladder resistance circuit, the resistances r1 to rn of the changeover switches SWI to SWn must be increased by an exponential factor of 2 toward the later stages.
For this reason, as the number of bits in the D-A converter increases, there is a problem that the resistance of the changeover switch in the subsequent stage becomes extremely large.For example, in the case of a 16-bit D-A converter, the resistor r16 of switch 5W16 is The resistance r1 becomes 2" (=32768 times), especially for D-A.
When the converter is configured as a semiconductor device, there is a problem in that the area required for the subsequent changeover switch becomes extremely large, making it impossible to implement.

本発明は上記事情を考慮してなされたもので、多数ビッ
トのデジタル信号をアナログ信号に変換するのに適した
R−2Rはしご形抵抗回路を用いたD−A変換器を提供
することを目的とする。
The present invention has been made in consideration of the above circumstances, and an object of the present invention is to provide a D-A converter using an R-2R ladder resistor circuit suitable for converting a multi-bit digital signal into an analog signal. shall be.

[課題を解決するための手段] 上記目的は、R−2Rはしご形抵抗回路の2R抵抗部に
、入力デジタル信号に応じて切換えられる切換スイッチ
が直列に挿入されたD−A変換器において、前記R−2
Rはしご形抵抗回路のR抵抗部に、抵抗値補正用の常閉
スイッチが直列に挿入され、前記2R抵抗部の抵抗の抵
抗値と前記切換スイッチの抵抗値の合計値が、前記R抵
抗部の抵抗の抵抗値と前記常閉スイッチの抵抗値の合計
値のほぼ2倍であることを特徴とするD−A変換器によ
って達成される。
[Means for Solving the Problem] The above object is to provide a D-A converter in which a changeover switch that is switched in accordance with an input digital signal is inserted in series in the 2R resistance section of the R-2R ladder resistance circuit. R-2
A normally closed switch for resistance value correction is inserted in series with the R resistance part of the R ladder type resistance circuit, and the sum of the resistance value of the resistor of the 2R resistance part and the resistance value of the changeover switch is the sum of the resistance values of the resistance of the 2R resistance part and the resistance value of the changeover switch. This is achieved by a D-A converter characterized in that the resistance value is approximately twice the sum of the resistance value of the resistor and the resistance value of the normally closed switch.

[作用] 本発明によれば、R−2Rはしこ形抵抗回路のR抵抗部
に、抵抗値補正用の常閉スイッチを直列に挿入し、2R
抵抗部の抵抗の抵抗値と切換スイッチの抵抗値の合計値
が、R抵抗部の抵抗の抵抗値と常閉スイッチの抵抗値の
合計値のほぼ2倍であるようにしているので、切換スイ
ッチや常閉スイッチも含めて抵抗値がR−2Rはしご形
抵抗回路として構成している。
[Function] According to the present invention, a normally closed switch for resistance value correction is inserted in series with the R resistance part of the R-2R wedge-shaped resistance circuit, and the 2R
The total value of the resistance value of the resistor in the resistor section and the resistance value of the changeover switch is approximately twice the total value of the resistance value of the resistor in the R resistance section and the resistance value of the normally closed switch, so the changeover switch It is constructed as a ladder-type resistance circuit with a resistance value of R-2R, including the normally closed switch.

[実施例] 本発明の第1の実施例によるD−A変換器を第1図に示
す0本実施例は第6図に示す従来のD−A変換器に本発
明を適用したものである。第6図に示す従来のD−A変
換器と同一の構成要素には同一の符号を付して説明を省
略又は簡略にする。
[Embodiment] A D-A converter according to a first embodiment of the present invention is shown in FIG. 1. This embodiment is an application of the present invention to a conventional D-A converter shown in FIG. . Components that are the same as those of the conventional DA converter shown in FIG. 6 are denoted by the same reference numerals, and description thereof will be omitted or simplified.

本実施例ではR−2Rはしご形抵抗回路の各R抵抗部に
抵抗値補正用の常閉スイッチ5WC1〜5WCnを設け
る。そして、2R抵抗部の切換スイッチSWI〜S W
 nまで含めた抵抗値が、R抵抗部の常閉スイッチ5W
C1〜5WCnまで含めた抵抗値の2倍になるようにす
る。
In this embodiment, normally closed switches 5WC1 to 5WCn for resistance value correction are provided in each R resistance section of the R-2R ladder resistance circuit. Then, selector switches SWI to S W of the 2R resistance section
The resistance value including up to n is the normally closed switch 5W of the R resistance part.
Make it twice the resistance value including C1 to 5WCn.

常閉スイッチ5WC1〜5WCnの抵抗値をr、切換ス
イッチSW1〜S W n及び常閉スイッチSWn+1
の抵抗値を2rにすると、2R抵抗部の全抵抗1i2R
+2rがR抵抗部の全抵抗値R7t−rの2倍になり、
スイッチまで含めて考えればR−2Rはしご形抵抗回路
として正しく構成される。
The resistance value of the normally closed switches 5WC1 to 5WCn is r, the changeover switches SW1 to SWn and the normally closed switch SWn+1
If the resistance value of is set to 2r, the total resistance of the 2R resistance part is 1i2R
+2r is twice the total resistance value R7t-r of the R resistance section,
If the switch is included, it is correctly configured as an R-2R ladder resistance circuit.

また、オペアンプOPの負入力端と正入力端間に挿入さ
れた抵抗Rにも抵抗値補正用の抵抗rの常閉スイッチS
WCを直列に挿入する。
In addition, a normally closed switch S of a resistor r for resistance value correction is also connected to the resistor R inserted between the negative input terminal and the positive input terminal of the operational amplifier OP.
Insert WC in series.

このように本実施例によれば、ビット数が増えてもビッ
ト数に比例してD−A変換器が太き(なるだけであるの
で、多ビツト用のD−A変換器でも容易に実現できる。
In this way, according to this embodiment, even if the number of bits increases, the D-A converter becomes thicker in proportion to the number of bits, so it can be easily realized even in a multi-bit D-A converter. can.

本実施例の具体例を第2図に示す、この具体例では第3
図に示すようにPMOSFETとNMO3FETを並列
接続したトランスファーゲートによりスイッチを構成し
ている。
A specific example of this embodiment is shown in FIG.
As shown in the figure, the switch is configured by a transfer gate in which a PMOSFET and an NMO3FET are connected in parallel.

2R抵抗部の切換スイッチSWI〜SWnは、PMOS
FETとNMO3FETが並列接続されたト・ランスフ
ァーゲートG T 1 a〜GTna、GTlb〜GT
nbで構成される。トランスファーゲートGT1a〜G
Tnaは、オペアンプopの正入力端に接続され、トラ
ンスファーゲートGT1b〜GTnbは、オペアンプo
Pの負入力端に接続される。入力デジタル信号のビット
信号81〜Bnは、トランスファーゲートGT1a〜G
TnaのPMoSFETのゲートとトランスファーゲー
トGT1b〜GTnbのNMO3FETのゲートには、
直接入力され、トランスファーゲートGT1a〜GTn
aのNMO3FF、Tのゲートとトランス7y−ゲート
GT1b 〜GTnbのPMoSFETのゲートには、
インバータINI〜INnにより反転されて入力される
The changeover switches SWI to SWn of the 2R resistance section are PMOS
Transfer gates GT1a~GTna, GTlb~GT in which FET and NMO3FET are connected in parallel
Consists of nb. Transfer gate GT1a~G
Tna is connected to the positive input terminal of operational amplifier op, and transfer gates GT1b to GTnb are connected to operational amplifier o
Connected to the negative input terminal of P. Bit signals 81 to Bn of the input digital signal are transferred to transfer gates GT1a to G
At the gate of PMoSFET of Tna and the gate of NMO3FET of transfer gates GT1b to GTnb,
directly input to transfer gates GT1a to GTn
NMO3FF of a, gate of T and gate of PMoSFET of transformer 7y-gate GT1b ~ GTnb,
The signal is inverted by inverters INI to INn and inputted.

ビット信号B1〜BnがVeeであると、トランスファ
ーゲートGT 1 a〜GT n aのPMoSFET
とNMO3FETは共にオフで、トランスファーゲート
GT1b〜GTnbのPMoSFETとNMO3FET
は共にオンとなり、2R抵抗部がオペアンプOPの負入
力端に接続される。逆に、と、ット信号B1〜BnがV
ccであると、トランスファーゲートGT1a〜GTn
aのPMoSFETとNMO3FETは共にオンで、ト
ランスファーゲートGT1b〜GTnbのPMO3FF
、TとNMO3FETは共にオフとなり、2R抵抗部が
オペアンプOPの正入力端に接続される。
When the bit signals B1 to Bn are Vee, the PMoSFETs of the transfer gates GT 1 a to GT na
and NMO3FET are both off, and PMoSFET and NMO3FET of transfer gates GT1b to GTnb are off.
are both turned on, and the 2R resistance section is connected to the negative input terminal of the operational amplifier OP. Conversely, the cut signals B1 to Bn are V
cc, transfer gates GT1a to GTn
PMoSFET and NMO3FET of a are both on, and PMO3FF of transfer gates GT1b to GTnb
, T and NMO3FET are both turned off, and the 2R resistance section is connected to the positive input terminal of the operational amplifier OP.

R抵抗部の常閉スイッチ5WCI〜5WCnと、最終段
の2R抵抗部の常閉スイッチSWn÷1と、オペアンプ
OPの負入力端と正入力端間の常閉スイッチSWCもP
MoSFETとNMO3FETが並列接続されたトラン
スファーゲートGT1c〜GTncにより構成される。
The normally closed switches 5WCI to 5WCn in the R resistance section, the normally closed switch SWn÷1 in the 2R resistance section in the final stage, and the normally closed switch SWC between the negative input terminal and positive input terminal of the operational amplifier OP are also connected to P.
It is composed of transfer gates GT1c to GTnc in which MoSFET and NMO3FET are connected in parallel.

PMoSFETのゲートにはVeeが、NMO8FET
のゲートにはVccが入力されて常に閉じている。
Vee is on the gate of PMoSFET, NMO8FET
Vcc is input to the gate and it is always closed.

トランスファーゲートを構成するPMoSFETとNM
O3FETの面積を調整することにより、2R抵抗部の
切換スイッチSWI〜S W nのオン抵抗を常閉スイ
ッチ5WC1〜5WCn、SWCのオン抵抗の2倍にな
るようにする。
PMoSFET and NM that make up the transfer gate
By adjusting the area of the O3FET, the on-resistance of the changeover switches SWI to SWn of the 2R resistance section is made to be twice the on-resistance of the normally closed switches 5WC1 to 5WCn and SWC.

このようにスイッチにトランスファーゲートを用いても
本実施例のようにオン抵抗を大きくする必要がないので
、寄生容量を小さく構成でき、リンギングが小さくセト
リングタイムが短くできる。
Even if a transfer gate is used as a switch in this way, there is no need to increase the on-resistance as in this embodiment, so the parasitic capacitance can be configured to be small, ringing is small, and settling time can be shortened.

また、スイッチにPMoSFETとNMO3FETを並
列接続したトランスファーゲートを用いなので、第3図
に示すようにゲートへの入力電圧によるオン抵抗の変動
が少なく精度のよいD−A変換が行える。
Further, since a transfer gate in which a PMoSFET and an NMO3FET are connected in parallel is used as a switch, as shown in FIG. 3, there is little variation in on-resistance due to the input voltage to the gate, and highly accurate D-A conversion can be performed.

本発明の第2の実施例によるD−A変換器を第4図に示
す。本実施例は第7図に示す従来のD−A変換器に本発
明を適用したものである。第7図に示す従来のD−A変
換器及び第1図に示す第1の実施例のD−A変換器と同
一の構成要素には同一の符号を付して説明を省略又は簡
略にする。
A DA converter according to a second embodiment of the present invention is shown in FIG. In this embodiment, the present invention is applied to the conventional DA converter shown in FIG. Components that are the same as those of the conventional D-A converter shown in FIG. 7 and the D-A converter of the first embodiment shown in FIG. .

本実施例のD−A変換器のR−2Rはしご形抵抗回路は
第1の実°施例のR−2Rはしこ形抵抗回路と同様に、
各R抵抗部に抵抗値補正用の常閉スイッチ5WC1〜5
WCnを設けると共に、第1段の前に設けられた2R抵
抗部にも常閉スイッチSWOを設け、2R抵抗部の切換
スイッチSWI〜S W nまで含めた抵抗値が、R抵
抗部の常閉スイッチ5WCI〜5WCnまで含めた抵抗
値の2倍になるようにする。
The R-2R ladder resistance circuit of the DA converter of this embodiment is similar to the R-2R ladder resistance circuit of the first embodiment.
Normally closed switch 5WC1-5 for resistance value correction in each R resistance part
WCn is provided, and a normally closed switch SWO is also provided in the 2R resistor section provided before the first stage, so that the resistance value including the changeover switches SWI to S Wn of the 2R resistor section is equal to the normally closed switch of the R resistor section. The resistance value should be twice the resistance value including switches 5WCI to 5WCn.

オペアンプOPの負入力端と正入力端間に挿入された抵
抗R2にも抵抗値補正用の抵抗R,−r/Rの常閉スイ
ッチSWCを直列に挿入する。
A normally closed switch SWC of resistance value correction resistors R and -r/R is also inserted in series with the resistor R2 inserted between the negative input terminal and the positive input terminal of the operational amplifier OP.

本実施例の具体例を第5図に示す、この具体例でも第3
図に示すPMoSFETとNMO3FETを並列接続し
たトランスファーゲートによりスイッチを構成したもの
であり、第2図に示す第1の実施例の具体例と同様であ
るので詳細な説明を省略する。
A specific example of this embodiment is shown in FIG.
The switch is constituted by a transfer gate in which the PMoSFET and NMO3FET shown in the figure are connected in parallel, and since it is the same as the specific example of the first embodiment shown in FIG. 2, detailed explanation will be omitted.

[発明の効果] 以上の通り、本発明によれば、R−2Rはしご形抵抗回
路のR抵抗部に、抵抗値補正用の常閉スイッチを直列に
挿入し、2R抵抗部の抵抗の抵抗値と切換スイッチの抵
抗値の合計値が、R抵抗部の抵抗の抵抗値と常閉スイッ
チの抵抗値の合計値のほぼ2倍であるようにしているの
で、切換スイッチや常閉スイッチも含めて抵抗値がR−
2Rはしこ形抵抗回路として構成できる。したがって、
ビット数が増えてもビット数に比例して回路が大きくな
るだけであり容易に実現できる。
[Effects of the Invention] As described above, according to the present invention, a normally closed switch for resistance value correction is inserted in series with the R resistance section of the R-2R ladder resistance circuit, and the resistance value of the resistance of the 2R resistance section is adjusted. The total resistance value of the changeover switch and the changeover switch is approximately twice the sum of the resistance value of the resistance of the R resistance part and the resistance value of the normally closed switch, so the changeover switch and the normally closed switch are included. The resistance value is R-
2R can be constructed as a wedge-shaped resistance circuit. therefore,
Even if the number of bits increases, the circuit will simply become larger in proportion to the number of bits, so it can be easily realized.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の第1の実施例によるD−A変換器の回
路図、 第2図は同D−A変換器の具体例の回路図、第3図は同
D−A変換器に用いるトランスファーゲートのオン抵抗
特性を示すグラフ、第4図は本発明の第2の実施例によ
るD−A変換器の回路図、 第5図は同D−A変換器の具体例の回路図、第6図、第
7図は従来のD−A変換器の回路図である。 図において、 SWI〜SWn・・・切換スイッチ 5WC1〜5WCn、SWC,SWn+1 、SWO・
・・常閉スイッチ OP・・・オペアンプ GT 1 a〜GT 1 b、 GT 1 b 〜GT
n b、 GTlczGTnc・・・トランスファーゲ
ートトランスファーケートのオン″!A机符性充示彷グ
ラフ第3図
Fig. 1 is a circuit diagram of a D-A converter according to a first embodiment of the present invention, Fig. 2 is a circuit diagram of a specific example of the D-A converter, and Fig. 3 is a circuit diagram of a specific example of the D-A converter. A graph showing the on-resistance characteristics of the transfer gate used, FIG. 4 is a circuit diagram of a D-A converter according to the second embodiment of the present invention, and FIG. 5 is a circuit diagram of a specific example of the same D-A converter. FIGS. 6 and 7 are circuit diagrams of conventional DA converters. In the figure, SWI~SWn... changeover switches 5WC1~5WCn, SWC, SWn+1, SWO・
...Normally closed switch OP...Operational amplifier GT1a~GT1b, GT1b~GT
n b, GTlczGTnc...Transfer gate transfer gate ON''!

Claims (1)

【特許請求の範囲】 1、R−2Rはしご形抵抗回路の2R抵抗部に、入力デ
ジタル信号に応じて切換えられる切換スイッチが直列に
挿入されたD−A変換器において、 前記R−2Rはしご形抵抗回路のR抵抗部に、抵抗値補
正用の常閉スイッチが直列に挿入され、前記2R抵抗部
の抵抗の抵抗値と前記切換スイッチの抵抗値の合計値が
、前記R抵抗部の抵抗の抵抗値と前記常閉スイッチの抵
抗値の合計値のほぼ2倍であることを特徴とするD−A
変換器。 2、請求項1記載のD−A変換器において、前記切換ス
イッチ及び常閉スイッチは、並列接続されたPMOSF
ETとNMOSFETを有するトランスファーゲートで
あることを特徴とするD−A変換器。
[Claims] 1. In a D-A converter in which a changeover switch that is switched according to an input digital signal is inserted in series in the 2R resistance section of the R-2R ladder resistance circuit, the R-2R ladder resistance circuit has the following features: A normally closed switch for resistance value correction is inserted in series with the R resistance section of the resistance circuit, and the total value of the resistance value of the resistor of the 2R resistance section and the resistance value of the changeover switch is equal to the resistance value of the resistance of the R resistance section. A D-A characterized in that the resistance value is approximately twice the sum of the resistance value and the resistance value of the normally closed switch.
converter. 2. In the D-A converter according to claim 1, the changeover switch and the normally closed switch are PMOSFs connected in parallel.
A DA converter characterized in that it is a transfer gate having an ET and an NMOSFET.
JP2134189A 1989-01-31 1989-01-31 D-a converter Pending JPH02202227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2134189A JPH02202227A (en) 1989-01-31 1989-01-31 D-a converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2134189A JPH02202227A (en) 1989-01-31 1989-01-31 D-a converter

Publications (1)

Publication Number Publication Date
JPH02202227A true JPH02202227A (en) 1990-08-10

Family

ID=12052403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2134189A Pending JPH02202227A (en) 1989-01-31 1989-01-31 D-a converter

Country Status (1)

Country Link
JP (1) JPH02202227A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0663108A (en) * 1992-08-25 1994-03-08 Sani Clean Nagano:Kk Movable device using ultraviolet lamp for sterilizing and dixinfecting floor of room and corridor
US6778120B2 (en) 2002-01-28 2004-08-17 Sharp Kabushiki Kaisha D/A converter circuit, and portable terminal device and audio device using the D/A converter circuit
KR100681685B1 (en) * 2004-12-30 2007-02-09 동부일렉트로닉스 주식회사 Repairable Digital-Analog Converter
JP2011029417A (en) * 2009-07-27 2011-02-10 Fujitsu Semiconductor Ltd Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0663108A (en) * 1992-08-25 1994-03-08 Sani Clean Nagano:Kk Movable device using ultraviolet lamp for sterilizing and dixinfecting floor of room and corridor
US6778120B2 (en) 2002-01-28 2004-08-17 Sharp Kabushiki Kaisha D/A converter circuit, and portable terminal device and audio device using the D/A converter circuit
KR100681685B1 (en) * 2004-12-30 2007-02-09 동부일렉트로닉스 주식회사 Repairable Digital-Analog Converter
JP2011029417A (en) * 2009-07-27 2011-02-10 Fujitsu Semiconductor Ltd Semiconductor device

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