JPH0219908A - Shape memory alloy device - Google Patents
Shape memory alloy deviceInfo
- Publication number
- JPH0219908A JPH0219908A JP63170421A JP17042188A JPH0219908A JP H0219908 A JPH0219908 A JP H0219908A JP 63170421 A JP63170421 A JP 63170421A JP 17042188 A JP17042188 A JP 17042188A JP H0219908 A JPH0219908 A JP H0219908A
- Authority
- JP
- Japan
- Prior art keywords
- value
- resistance value
- memory alloy
- shape memory
- shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001285 shape-memory alloy Inorganic materials 0.000 title claims abstract description 31
- 238000006073 displacement reaction Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000011084 recovery Methods 0.000 claims description 21
- 238000005452 bending Methods 0.000 abstract description 15
- 230000004043 responsiveness Effects 0.000 abstract description 13
- 101100288434 Arabidopsis thaliana LACS2 gene Proteins 0.000 abstract description 5
- 208000033550 Proximal spinal muscular atrophy type 4 Diseases 0.000 abstract description 5
- 101100294206 Schizosaccharomyces pombe (strain 972 / ATCC 24843) fta4 gene Proteins 0.000 abstract description 5
- 201000006960 adult spinal muscular atrophy Diseases 0.000 abstract description 5
- 208000005606 type IV spinal muscular atrophy Diseases 0.000 abstract description 5
- 208000022074 proximal spinal muscular atrophy Diseases 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 10
- 238000001514 detection method Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 1
- 229910000734 martensite Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Landscapes
- Manipulator (AREA)
- Endoscopes (AREA)
- Control Of Position Or Direction (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は形状記憶合金を利用する形状記憶合金装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a shape memory alloy device that utilizes a shape memory alloy.
従来、形状記憶合金の加熱時の形状回復動作を利用する
装置が種々開発されている。例えば、特開昭６２−２６
０４１号公報に記載の内視鏡がある。ここでは、形状記
憶合金への加熱方式としては、一定電圧、または一定電
流を印加する方式、あるいはパルス幅変１凋方式か採用
されている。この場合、パルス幅変調方式ではパルス幅
は可変できても、印加電圧の振幅はｉ＋Ｊ変できない。Conventionally, various devices have been developed that utilize the shape recovery operation of shape memory alloys when heated. For example, JP-A-62-26
There is an endoscope described in Publication No. 041. Here, as a heating method for the shape memory alloy, a method of applying a constant voltage or a constant current, or a method of varying the pulse width is adopted. In this case, in the pulse width modulation method, although the pulse width can be varied, the amplitude of the applied voltage cannot be varied by i+J.
何故ならば、通電時間が最大の状態で、継続的に通電し
ても、形状記憶合金の温度か過度にト昇しないように印
加電圧の振幅を設定しであるからである。This is because the amplitude of the applied voltage is set so that the temperature of the shape memory alloy does not rise excessively even if the current is continuously applied when the current is applied for the maximum time.
このように、最大通電漬か制限されているので、応答性
や湾曲カニを一時的に増大することができなかった。こ
こで、湾曲力量とは、形状記憶合金に対して抵抗、負＜
、：ｆが印加されていて、これら抵抗、負荷に逆らって
形状記憶合金が湾曲しようとする時に発生される力を指
す。従って、挿入部の湾曲を速やかに行ないたい場合や
、挿入部の湾曲部に体腔壁が当たった場合等に対処でき
ずに、操作性が悪いという欠点があった。As described above, since the maximum energization is limited, it is not possible to temporarily increase responsiveness or bending. Here, the bending force is the resistance to the shape memory alloy, negative <
, :f is applied and refers to the force generated when the shape memory alloy tries to bend against these resistances and loads. Therefore, it is not possible to deal with cases where the insertion portion needs to be curved quickly or where the body cavity wall hits the curved portion of the insertion portion, resulting in poor operability.
また、これを解決するために本願出願人は実願昭０２−
２３２ｇｇ号で、形状記憶合金に通常の通電電圧、また
は通電電流よりも大きな電圧、または電流を一時的に印
加する手段を提案している。In addition, in order to solve this problem, the applicant of the present application
No. 232gg proposes a means for temporarily applying a voltage or current larger than a normal energizing voltage or energizing current to a shape memory alloy.
しかしながら、実願昭６２−２８２９９号に記載の装置
では、応答性や湾曲力量の向上のためには、通常の湾曲
操作や挿入操作に加えて、通電スイッチを操作する等の
特別な操作が必要であり、操作が複雑である。However, in the device described in Utility Model Application No. 62-28299, special operations such as operating an energization switch are required in addition to normal bending and insertion operations in order to improve responsiveness and bending force. , and the operation is complicated.
従って、この発明の目的は煩わしい操作を必要とせすに
形状記憶合金の湾曲応答性、湾曲力量を向上できる形状
記憶合金装置を提供することである。Therefore, an object of the present invention is to provide a shape memory alloy device that can improve the bending response and bending force of the shape memory alloy without requiring troublesome operations.
この発明による形状記憶合金装置は形状記憶合金を加熱
する通電回路と、形状記憶合金の変位量を検出する抵抗
値検出回路と、形状回復動作の開始時の変位量を第１の
閾値とし、形状回復動作の終了時の変位はを第２の閾値
とし、検出した変位はを第１１第２の閾値と比較する比
較器と、検出した変位量か第１の閾値乃至第２の閾値の
範囲外にある場合は、通電回路の加熱量を増加させる制
御部を具備する。The shape memory alloy device according to the present invention includes an energizing circuit that heats the shape memory alloy, a resistance value detection circuit that detects the amount of displacement of the shape memory alloy, and a displacement amount at the start of the shape recovery operation as a first threshold value. The displacement at the end of the recovery operation is set as a second threshold, the detected displacement is compared with an eleventh second threshold, and the detected displacement is outside the range of the first threshold or the second threshold. In this case, a control unit is provided to increase the amount of heating of the energized circuit.
この発明によれば、形状記憶合金の変位量から形状回復
動作の開始点、または終了点付近であるかを検出し、そ
れらの場合は自動的に加熱量を増加することにより、煩
わしい操作を必要とせずに形状記憶合金の湾曲応答性、
湾曲力量を向上できる。According to this invention, it is possible to detect whether the shape memory alloy is near the start or end point of the shape recovery operation based on the amount of displacement, and in such cases, the amount of heating is automatically increased, thereby eliminating the need for troublesome operations. Bending response of shape memory alloys, without and
Can improve bending strength.
以Ｆ図面を参照してこの発明による形状記憶合金装置の
実施例を説明する。ここでは、内視鏡の先端湾曲部を湾
曲させるために形状記憶合金を使った例を説明する。Hereinafter, embodiments of the shape memory alloy device according to the present invention will be described with reference to drawings F. Here, an example will be described in which a shape memory alloy is used to curve the distal end curved portion of an endoscope.
第１図に内視鏡装置全体の構成を示す。この装置は内視
鏡本体１と光源装置９からなる。内視鏡本体１の挿入部
２の先端側の湾曲部３に、線材状あるいはバネ状の形状
記憶合金（以下、ＳＭＡ：５ｂａｐｅ Ｍｅｍｏｒｙ
Ａ１１ｏｙと称する）４が設けられている。５ＭＡ４と
しては、Ｎ ｉ −Ｔ ｉ合金、Ｃｕ −Ｚ ｎ −Ａ
Ω合金等の熱弾性型マルテンサイト変態を示す材料が用
いられる。記憶させておく形状は破線で示すように上側
へ湾曲した形状とする。変態点は３０〜８ （１’Ｃ５
例えば６０℃に設定する。すなわち、５ＭＡ４は、常時
は、実線で示すように直線状であり、加熱されると、上
側に湾曲する。FIG. 1 shows the overall configuration of the endoscope device. This device consists of an endoscope main body 1 and a light source device 9. A wire-shaped or spring-shaped shape memory alloy (hereinafter referred to as SMA: 5bape memory
A11oy) 4 is provided. As 5MA4, Ni-Ti alloy, Cu-Zn-A
A material exhibiting thermoelastic martensitic transformation, such as an Ω alloy, is used. The shape to be memorized is a shape curved upward as shown by the broken line. The transformation point is 30-8 (1'C5
For example, set it to 60°C. That is, 5MA4 is normally in a straight line as shown by the solid line, but when heated, it curves upward.
５ＭＡ４の両端はそれぞれリード線５ａ、５ｂの一端に
接続される。一方のリード線５ａの他端は操作部７に設
けられた通電スイッチ６を介し、さらにユニバーサルコ
ード８内を挿通され、光源装置９内の通電回路１３、抵
抗値検出回路１０に接続される。他ｈ゛のリード線５ｂ
の他端はユニバーサルコード８内を挿通され、光源装置
９内の通電回路１３、抵抗値検出回路１０に接続される
。Both ends of 5MA4 are connected to one end of lead wires 5a and 5b, respectively. The other end of one lead wire 5a is passed through the energization switch 6 provided on the operating section 7, and further through the universal cord 8, and connected to the energization circuit 13 and the resistance value detection circuit 10 in the light source device 9. Lead wire 5b of other h
The other end is inserted through the universal cord 8 and connected to the energizing circuit 13 and resistance value detection circuit 10 in the light source device 9 .
抵抗値検出回路１０の検出値は第１、第２の比較器１２
ａ、１２ｂに供給されるとともに、制御部１１にも供給
される。第１、第２の比較器１２ａ、１２ｂは検出値を
それぞれ第１、第２の閾値と比較する。制御部１１には
第１、第２比較器１２ａ、１２ｂの比較結果も供給され
る。制御部１１からの１しす御信号が通電回路１３に供
給される。The detected value of the resistance value detection circuit 10 is detected by the first and second comparators 12.
a, 12b, and is also supplied to the control section 11. The first and second comparators 12a and 12b compare the detected values with first and second thresholds, respectively. The control unit 11 is also supplied with the comparison results of the first and second comparators 12a and 12b. A single control signal from the control section 11 is supplied to the energization circuit 13.
次に、動作を説明する。通電スイッチ６をオンすると、
５ＭＡ４と通電回路１３がリード線５ａ。Next, the operation will be explained. When the power switch 6 is turned on,
5MA4 and the energizing circuit 13 are the lead wires 5a.
５ｂを介して接続され、通電回路１３からの通電信号が
５ＭＡ４に供給される。５ＭＡ４は通電によるジュール
熱により加熱され、形状回復動作を開始する。5b, and an energization signal from the energization circuit 13 is supplied to 5MA4. 5MA4 is heated by Joule heat due to the energization, and starts a shape recovery operation.
この通電信号はパルス信号であり、抵抗値検出回路１０
は通電パルスの空き時間に５ＭＡ４の抵抗値を検出する
。この抵抗値よりＳ Ｍ Ａ ４の変位、すなわち湾曲
角度を知ることができる。この検出した抵抗値を制御部
１１に入力することにより、制御部１１では所望の湾曲
角度が得られるように通電回路１３からの通電信号量を
変化させ、湾曲角度を制御する。通電量制御は通電パル
スのパルス幅（デユーティ比）を変えることにより実現
される。すなわち、デユーティ比を抵抗値に応じて変え
ている。ただし、過大な通電によるＳ ＭＡ４の１１μ
度が過度に１．昇するのを防雨するために最大デユーテ
ィ比Ｄ ａ＋ａｘが設定されている。This energization signal is a pulse signal, and the resistance value detection circuit 10
detects the resistance value of 5MA4 during the idle time of the energization pulse. From this resistance value, the displacement of S M A 4, that is, the bending angle can be known. By inputting this detected resistance value to the control section 11, the control section 11 controls the bending angle by changing the amount of energization signal from the energization circuit 13 so as to obtain a desired bending angle. Control of the energization amount is achieved by changing the pulse width (duty ratio) of the energization pulse. That is, the duty ratio is changed depending on the resistance value. However, due to excessive energization, 11μ of SMA4
The degree is excessively 1. The maximum duty ratio Da+ax is set to prevent rain from rising.
ここで、一般に、５ＭＡ４を加熱した場合、その応答性
（変位速度）は形状回復動作の開始点と終了点付近は形
状回復動作中に比べて悪い。そのため、これらの時は通
電量を増加させて応答性を向上することが必要である。Generally, when 5MA4 is heated, its response (displacement speed) is worse near the start and end points of the shape recovery operation than during the shape recovery operation. Therefore, in these cases, it is necessary to increase the amount of current to improve responsiveness.
第２図に通電パルスのデユーティ比りを０． １〜０．
５まで０．１刻みで変化させた時の応答性の変化を示す
。第３図は通電パルスの電圧（振幅）を５Ｖ〜９Ｖまで
ＩＶ刻みで変化させた時の応答性の変化を示す図である
。これらの図から、通電パルスのデユーティ比、電圧を
増加することにより、応答性を向にできることがわかる
。Figure 2 shows the duty ratio of the energizing pulse as 0. 1~0.
It shows the change in responsiveness when changing up to 5 in 0.1 increments. FIG. 3 is a diagram showing changes in responsiveness when the voltage (amplitude) of the energizing pulse is changed from 5V to 9V in IV increments. From these figures, it can be seen that the responsiveness can be improved by increasing the duty ratio and voltage of the energizing pulse.
次に、１１シ状同復動作の開始点と終了点付近の検出を
説明する。第４図は５ＭＡ４の温度と抵抗値の関係を示
す図である。形状回復動作開始前の抵抗（Ｊ ＲＯと、
形状回復動作終了後の抵抗値Ｒ３は既知であるので、Ｒ
Ｏよりも多少低い抵抗値Ｒ１を第１の閾値とし、Ｒ３よ
りも多少高い抵抗値Ｒ２を第２の閾値とすれば、形状回
復動作の開始点と終了点付近を検出できる。ここで、抵
抗値Ｒ１，Ｒ２の値は任意に設、定可能である。Next, detection of the vicinity of the start point and end point of the 11-shape repeating operation will be described. FIG. 4 is a diagram showing the relationship between temperature and resistance value of 5MA4. Resistance before the start of shape recovery operation (JRO and
Since the resistance value R3 after the shape recovery operation is known, R
If the resistance value R1, which is slightly lower than O, is set as the first threshold value, and the resistance value R2, which is slightly higher than R3, is set as the second threshold value, the vicinity of the start and end points of the shape recovery operation can be detected. Here, the values of the resistance values R1 and R2 can be arbitrarily set.
第１、第２の比較器１２ａ、１２ｂはそれぞれ５ＭＡ４
の抵抗値をＲ１，Ｒ２と比較する。そして、制御部１１
は５ＭＡ４の抵抗値がＲ１とＲ２との間にある場合は、
通常の通電を行い、Ｒ１以−１−１またはＲ２以下の場
合は、通常の通電よりも大きな通電ごになるように通電
回路１３を制御することにより、応答性、湾曲力鑓を向
トすることができる。The first and second comparators 12a and 12b each have a 5MA4
Compare the resistance value of R1 and R2. And the control section 11
If the resistance value of 5MA4 is between R1 and R2, then
Normal energization is performed, and if R1 or more -1-1 or R2 or less, the energization circuit 13 is controlled so that the energization is larger than normal energization, thereby improving responsiveness and bending force. be able to.
第５図に制御回路１１による通電パルスの制御例を示す
。ここで、５ＭＡ４の抵抗値ＲＲ＞Ｒ１は形状回復動作
開始前、Ｒ１≧Ｒ≧Ｒ２は形状回復動作中、Ｒ２＞Ｒは
形状回復動作終了後を示す。FIG. 5 shows an example of controlling the energizing pulse by the control circuit 11. Here, the resistance value RR>R1 of 5MA4 indicates before the shape recovery operation starts, R1≧R≧R2 indicates during the shape recovery operation, and R2>R indicates after the shape recovery operation ends.
第５図（ａ）の例は形状回復動作中は最大デユーティ比
以下でパルス幅変調を行い、Ｒ＞Ｒ１。In the example shown in FIG. 5(a), pulse width modulation is performed below the maximum duty ratio during the shape recovery operation, and R>R1.
Ｒ２＞Ｒの場合には、この最大デユーティ沈思」二のパ
ルス幅を実現できるようにして、Ｒ１≧Ｒ≧Ｒ２の場合
に比べて通電パルスのパルス幅を大きくすることにより
通［ｍを増加する。In the case of R2>R, the pulse width of the maximum duty cycle can be realized, and the pulse width of the energizing pulse is increased compared to the case of R1≧R≧R2. .
同図（ｂ）の例はＲ＞Ｒ１、Ｒ２＞Ｒの場合には、イン
パルス的に大電力、大電流のパルスを供給することによ
り通電量を増加する。In the example shown in FIG. 5B, when R>R1 and R2>R, the amount of current is increased by supplying pulses of large power and large current in an impulse manner.
同図（Ｃ）の例はインパルス的ではなく均一に通電パル
スの振幅を増加する。In the example shown in FIG. 4C, the amplitude of the energization pulse is increased uniformly rather than impulsively.
同図（ｄ）の例は形状回復動作中は一定のデユーティ比
の中でバースト波形を発生させ、Ｒ＞Ｒ１、Ｒ２＞Ｒの
場合には、そのバースト波のパルス数を増加するととも
に、振幅を増加する。In the example shown in (d) of the same figure, a burst waveform is generated within a constant duty ratio during the shape recovery operation, and when R>R1, R2>R, the number of pulses of the burst wave is increased and the amplitude is increased. increase.
いずれの場合でも、Ｒ＞ＲＬ 、Ｒ２＞Ｈの場合には通
電量か増加する。In either case, when R>RL and R2>H, the amount of current flowing increases.
このように第１実施例によれば、ＳＡＭ４の変位量をそ
の抵抗値から検出し、形状回復動作の開始時、または終
了時を検出し、その際は自動的に通電はを増加させるこ
とにより、５ＭＡ４の温度をすばやく変化させることが
でき、応答性、湾曲力厘の向」−が可能となる。また、
常時、大電圧、大電流を５ＭＡ４に供給する方法に比べ
、記憶形状の喪失の可能性が少なくなる。In this way, according to the first embodiment, the amount of displacement of the SAM 4 is detected from its resistance value, and the start or end of the shape recovery operation is detected, and at that time, the energization is automatically increased. , the temperature of 5MA4 can be changed quickly, and responsiveness and bending force can be improved. Also,
Compared to the method of constantly supplying large voltage and large current to 5MA4, the possibility of losing the memory shape is reduced.
次に、第２実施例を説明する。第２実施例は第］実施例
の光源装置９の変形に関するので、その部分のみのブロ
ック図を第９図に示す。抵抗値検出回路１０の出力かメ
モリ１４のアドレス端子に人力され、メモリ１４の出力
が制御部１１に供給される。Next, a second embodiment will be described. Since the second embodiment relates to a modification of the light source device 9 of the second embodiment, a block diagram of only that part is shown in FIG. The output of the resistance value detection circuit 10 is input to the address terminal of the memory 14, and the output of the memory 14 is supplied to the control section 11.
この第２実施例では、予め、抵抗値に応じて印加するパ
ルス幅、または電圧をメモリ１４に記憶させている。こ
の記憶データは形状回復の開始、あるいは終了の前後で
大きな通電口が得られるように決められている。In this second embodiment, the pulse width or voltage to be applied according to the resistance value is stored in the memory 14 in advance. This stored data is determined so that a large energizing port can be obtained before and after the start or end of shape recovery.
第２実施例によっても、第１実施例と同様な効果が得ら
れる。なお、制御部１］でＰＩＤ制御を用いた場合には
、形状回復の開始時、あるいは終了時の前後でパラメー
タＰの値を大きくすること等によっても同様の効果が得
られる。The second embodiment also provides the same effects as the first embodiment. Note that when PID control is used in the control section 1], the same effect can be obtained by increasing the value of the parameter P before and after the start or end of shape recovery.
上述の説明では、５ＭＡ４を加熱するのにパルス通電を
用いたが、これに限らず直流通電を用いてもよい。その
例を第７図に示す。In the above description, pulse energization was used to heat the 5MA4, but the present invention is not limited to this, and direct current may also be used. An example is shown in FIG.
５ＭＡ４は１つに限らず複数個設けて、複数の方向に湾
曲を得ることも可能である。また、医療用の内視鏡以外
にも工業用の内視鏡やカテーテル処置具等の各種のアク
チュエータに適応してもよい。さらに、５ＭＡ４の変位
量を抵抗値により検出していたが、温度センサにより温
度を検出したり、歪みゲージ等により変位を検出し、各
変位量に’２１、ｍ２の閾値を設けてもよい。It is also possible to provide not only one but a plurality of 5MA4s to obtain curvature in a plurality of directions. In addition to medical endoscopes, the present invention may be applied to various actuators such as industrial endoscopes and catheter treatment instruments. Furthermore, although the amount of displacement of 5MA4 is detected by the resistance value, the temperature may be detected by a temperature sensor, the displacement may be detected by a strain gauge, etc., and threshold values of '21 and m2 may be provided for each amount of displacement.
以上説明したように、この発明によれば、形状記憶合金
の変位量から形状回復動作の開始点、または終了点付近
であるかを検出し、それらの場合は自動的に加熱量を増
加することにより、煩わしい操作を必要とせずに応答性
、湾曲力量を向−Ｅできる形状記憶合金装置が提供され
る。As explained above, according to the present invention, it is possible to detect from the amount of displacement of the shape memory alloy whether it is near the start point or end point of the shape recovery operation, and to automatically increase the amount of heating in such cases. This provides a shape memory alloy device that can improve responsiveness and bending force without requiring troublesome operations.
第１図はこの発明による形状記憶合金装置の第１実施例
としての内視鏡装置を示す図、第２図は通電パルスのデ
ユーティ比を変化させた時の形状記憶合金の応答性を示
す図、第３図は通電パルスの電圧を変化させた時の形状
記憶合金の応答性の変化を示す図、第４図は形状記憶合
金の温度と抵抗値の関係を示す図、第５図は通電量の増
加のための制御例を示す信号波形図、第６図は第２実施
例のブロック図、第７図は直流通電の場合の通電量の制
御例を示す信号波形図である。
１・・・内視鏡、４・・・形状記憶合金、５ａ、５ｂ・
・・リード線、９・・・光源装置、１０・・・抵抗値検
出回路、１１・・・制御部、１２ａ、１２ｂ・・・比較
器、１３・・・通電回路。FIG. 1 is a diagram showing an endoscope device as a first embodiment of the shape memory alloy device according to the present invention, and FIG. 2 is a diagram showing the responsiveness of the shape memory alloy when the duty ratio of the energization pulse is changed. , Figure 3 is a diagram showing the change in responsiveness of the shape memory alloy when the voltage of the energizing pulse is changed, Figure 4 is a diagram showing the relationship between the temperature and resistance value of the shape memory alloy, and Figure 5 is a diagram showing the relationship between the temperature and resistance value of the shape memory alloy. FIG. 6 is a block diagram of the second embodiment, and FIG. 7 is a signal waveform diagram showing an example of controlling the amount of energization in the case of direct current flow. 1... Endoscope, 4... Shape memory alloy, 5a, 5b.
...Lead wire, 9...Light source device, 10...Resistance value detection circuit, 11...Control unit, 12a, 12b...Comparator, 13...Electrification circuit.
Claims (1)
を検出する手段と、形状回復動作の開始時の変位量を第
１の閾値とし、形状回復動作の終了時の変位量を第２の
閾値とし、前記検出した変位量を第１、第２の閾値と比
較する手段と、前記検出した変位量が第１閾値乃至第２
の閾値の範囲外にある場合は、前記加熱手段の加熱量を
増加させる制御手段を具備する形状記憶合金装置。A means for heating the shape memory alloy, a means for detecting the amount of displacement of the shape memory alloy, the amount of displacement at the start of the shape recovery operation as a first threshold value, and the amount of displacement at the end of the shape recovery operation as a second threshold value. means for comparing the detected displacement amount with a first threshold value and a second threshold value;
A shape memory alloy device comprising: a control means for increasing the heating amount of the heating means when the temperature is outside the threshold value range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63170421A JP2702973B2 (en) | 1988-07-08 | 1988-07-08 | Shape memory alloy device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63170421A JP2702973B2 (en) | 1988-07-08 | 1988-07-08 | Shape memory alloy device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0219908A true JPH0219908A (en) | 1990-01-23 |
| JP2702973B2 JP2702973B2 (en) | 1998-01-26 |
Family
ID=15904612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63170421A Expired - Lifetime JP2702973B2 (en) | 1988-07-08 | 1988-07-08 | Shape memory alloy device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2702973B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5231989A (en) * | 1991-02-15 | 1993-08-03 | Raychem Corporation | Steerable cannula |
| JP2011080483A (en) * | 2011-01-27 | 2011-04-21 | Konica Minolta Opto Inc | Actuator drive device |
| JP2013126506A (en) * | 2011-12-19 | 2013-06-27 | Olympus Medical Systems Corp | Endoscope apparatus |
-
1988
- 1988-07-08 JP JP63170421A patent/JP2702973B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5231989A (en) * | 1991-02-15 | 1993-08-03 | Raychem Corporation | Steerable cannula |
| US5345937A (en) * | 1991-02-15 | 1994-09-13 | Raychem Corporation | Steerable cannula |
| JP2011080483A (en) * | 2011-01-27 | 2011-04-21 | Konica Minolta Opto Inc | Actuator drive device |
| JP2013126506A (en) * | 2011-12-19 | 2013-06-27 | Olympus Medical Systems Corp | Endoscope apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2702973B2 (en) | 1998-01-26 |
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