JPH02196477A - Manufacture of photosemiconductor device - Google Patents

Manufacture of photosemiconductor device

Info

Publication number
JPH02196477A
JPH02196477A JP1016731A JP1673189A JPH02196477A JP H02196477 A JPH02196477 A JP H02196477A JP 1016731 A JP1016731 A JP 1016731A JP 1673189 A JP1673189 A JP 1673189A JP H02196477 A JPH02196477 A JP H02196477A
Authority
JP
Japan
Prior art keywords
heat sink
light emitting
array
dicing
emitting elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1016731A
Other languages
Japanese (ja)
Inventor
Tsuneo Mizuno
水野　恒生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1016731A priority Critical patent/JPH02196477A/en
Publication of JPH02196477A publication Critical patent/JPH02196477A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management

Abstract

PURPOSE:To reduce manhours of manufacturing and decrease of rejection rate and simplify designs of automatic mounting facilities and the like by mounting light emitting elements on each silicon sink of a heat sink array which is formed into a wafer-like shape. CONSTITUTION:A silicon wafer is treated with dicing and metallization to have a heat sink array in which each heat sink 1 is separated and disposed by slots 3. Light emitting elements 2 consisting of a multilayer structure involving light emitting regions are mounted to each heat sink 1 of its heat sink array and after that, the elements 2 are divided and are loaded on each stem. For example, involving the light emitting regions, the light emitting elements 2 are formed and dicing, metallization, and vapor deposition of solder 4 are performed at a silicon wafer and then, a heat sink, array which is separated by dicing slots 3 is formed. The light emitting elements 2 are pressed slightly and are heated to perform mounting. Then breaking is performed to divide the elements into each disk and respective disks are loaded on the stem.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光半導体装置の製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for manufacturing an optical semiconductor device.

〔従来の技術〕[Conventional technology]

従来、光半導体装置は、発光領域を内包する多層構造か
ら成る発光素子を形成した後、バラバラに分離された、
個々のヒートシンク上に、発光素子を各々マウントして
製造していた。Conventionally, optical semiconductor devices are made by forming a light-emitting element consisting of a multilayer structure containing a light-emitting region, and then separating it into pieces.
The light emitting devices were manufactured by mounting them on individual heat sinks.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の光半導体装置の製造方法は、バラバラに
分離された個々のヒートシンクに個々の発光素子をそれ
ぞれマウントするため、自動マウンター等により、量産
を図る場合、その装置が複雑になり、工数がかかり、さ
らに不良の発生率が上がるという欠点がある。In the conventional manufacturing method for optical semiconductor devices described above, each light emitting element is mounted on each separately separated heat sink, so when mass production is attempted using an automatic mounter, etc., the equipment becomes complicated and the number of man-hours increases. However, there is a disadvantage that the rate of occurrence of defects further increases.

本発明はこのような問題点を解決し生産性の良い製造方
法を提供することを目的としている。The present invention aims to solve these problems and provide a manufacturing method with high productivity.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の製造方法は、シリコンのヒートシンクをダイシ
ング実施後、メタルの蒸着を行ないヒートシンクアレイ
を形成しておき、そのウェハー状態（ヒートシンクアレ
イ）のままで、前もって作っておいた発光素子を各ヒー
トシンクにマウントする。この後、プローブ付のテスタ
ーにて各発光素子の電気的特性選別を行ない、ブレーキ
ングにより個々のディスクに分けて各ディスクをステム
に搭載して光半導体装置とする。In the manufacturing method of the present invention, after dicing a silicon heat sink, metal is vapor-deposited to form a heat sink array, and while the wafer remains in its wafer state (heat sink array), a prefabricated light emitting element is attached to each heat sink. mount. Thereafter, the electrical characteristics of each light emitting element are selected using a tester equipped with a probe, and the light emitting elements are divided into individual disks by braking, and each disk is mounted on a stem to form an optical semiconductor device.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図は本発明の一実施例を示す図で、第２図は第１図
の部分的拡大図である。まず、半導体基板上に半導体層
を複数層成長して発光領域を内包する多層構造から成る
発光素子を前もって形成しておく。シリコンウェハーも
前もってダイシング及びメタライズ、ソルダ４の蒸着を
行なって、ダイシング溝３で分離されたヒートシンクア
レイを形成しておく。次にウェハー形状のヒートシンク
アレイの個々のシリコン・ヒートシンク１上に発光素子
２を軽く圧着、加熱し、マウントを実施する。これをブ
レーキングして個々のディスクに分けてその各々を１つ
づつステムに搭載して光半導体装置とする。FIG. 1 is a diagram showing one embodiment of the present invention, and FIG. 2 is a partially enlarged view of FIG. 1. First, a light emitting element having a multilayer structure including a light emitting region is formed in advance by growing a plurality of semiconductor layers on a semiconductor substrate. The silicon wafer is also previously diced, metalized, and vapor-deposited with solder 4 to form heat sink arrays separated by dicing grooves 3. Next, the light emitting elements 2 are lightly pressed onto the individual silicon heat sinks 1 of the wafer-shaped heat sink array, heated, and mounted. This is braked and divided into individual disks, each of which is mounted one by one on a stem to form an optical semiconductor device.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明は、発光素子をウェハー形
状のヒートシンクアレイの各シリコン・ヒートシンク上
にマウントする事により、個々のマウント作業、及び素
子の電気特性選別の実施に際し、個々のヒートシンクを
１つづつ取扱うのでなく、ヒートシンクアレイとして一
括して扱うので大幅な工数削減が計れ、不良発生率の低
下、及び自動マウンター設備の設計の簡易化等の効果が
ある。As explained above, the present invention mounts a light emitting element on each silicon heatsink of a wafer-shaped heatsink array. Rather than handling them one by one, they are handled all at once as a heat sink array, resulting in a significant reduction in man-hours, a reduction in the incidence of defects, and simplification of the design of automatic mounter equipment.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本発明の一実施例の概略図、第２図は、第１
図の部分的拡大図である。 １・・・シリコン・ヒートシンク、２・・・発光素子、
３・・・ダイシング溝、４・・・ソルダ。FIG. 1 is a schematic diagram of one embodiment of the present invention, and FIG. 2 is a schematic diagram of an embodiment of the present invention.
It is a partially enlarged view of the figure. 1... Silicon heat sink, 2... Light emitting element,
3...Dicing groove, 4...Solder.

Claims (1)

【特許請求の範囲】[Claims] シリコンウェハーをダイシング、メタライズして、溝で
各ヒートシンクが分離・配列しているヒートシンクアレ
イとし、このヒートシンクアレイの各ヒートシンクに、
発光領域を内包する多層構造から成る発光素子をマウン
トした後、分割し、ステムに搭載する事を特徴とする光
半導体装置の製造方法。A silicon wafer is diced and metallized to create a heat sink array in which each heat sink is separated and arranged by a groove, and each heat sink in this heat sink array is
A method for manufacturing an optical semiconductor device, which comprises mounting a light-emitting element having a multilayer structure containing a light-emitting region, dividing the light-emitting element into parts, and mounting the light-emitting element on a stem.
JP1016731A 1989-01-25 1989-01-25 Manufacture of photosemiconductor device Pending JPH02196477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1016731A JPH02196477A (en) 1989-01-25 1989-01-25 Manufacture of photosemiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1016731A JPH02196477A (en) 1989-01-25 1989-01-25 Manufacture of photosemiconductor device

Publications (1)

Publication Number Publication Date
JPH02196477A true JPH02196477A (en) 1990-08-03

Family

ID=11924409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1016731A Pending JPH02196477A (en) 1989-01-25 1989-01-25 Manufacture of photosemiconductor device

Country Status (1)

Country Link
JP (1) JPH02196477A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0588406A1 (en) * 1992-09-07 1994-03-23 Koninklijke Philips Electronics N.V. Method of manufacturing a block-shaped support body for a semiconductor component
WO2001026153A1 (en) * 1999-10-05 2001-04-12 Drukker International B.V. Method of bonding a plurality of thermally conductive elements to a substrate
US7842553B2 (en) * 2002-12-09 2010-11-30 Intel Corporation Cooling micro-channels
US8581291B2 (en) 2008-12-08 2013-11-12 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0588406A1 (en) * 1992-09-07 1994-03-23 Koninklijke Philips Electronics N.V. Method of manufacturing a block-shaped support body for a semiconductor component
WO2001026153A1 (en) * 1999-10-05 2001-04-12 Drukker International B.V. Method of bonding a plurality of thermally conductive elements to a substrate
US7842553B2 (en) * 2002-12-09 2010-11-30 Intel Corporation Cooling micro-channels
US8581291B2 (en) 2008-12-08 2013-11-12 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US8906716B2 (en) 2008-12-08 2014-12-09 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US9431588B2 (en) 2008-12-08 2016-08-30 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same

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