JPH02194567A - Ceramic superconductive wire - Google Patents
Ceramic superconductive wireInfo
- Publication number
- JPH02194567A JPH02194567A JP1013103A JP1310389A JPH02194567A JP H02194567 A JPH02194567 A JP H02194567A JP 1013103 A JP1013103 A JP 1013103A JP 1310389 A JP1310389 A JP 1310389A JP H02194567 A JPH02194567 A JP H02194567A
- Authority
- JP
- Japan
- Prior art keywords
- silver
- yba2cu3o7
- delta layer
- ceramic
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910000510 noble metal Inorganic materials 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052709 silver Inorganic materials 0.000 abstract description 18
- 239000004332 silver Substances 0.000 abstract description 18
- 239000000463 material Substances 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 229910003097 YBa2Cu3O7−δ Inorganic materials 0.000 abstract 6
- 230000008021 deposition Effects 0.000 abstract 3
- 238000000059 patterning Methods 0.000 abstract 3
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 239000010970 precious metal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002887 superconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- -1 3.=YBa Substances 0.000 description 1
- SIKJAQJRHWYJAI-UHFFFAOYSA-O 1H-indol-1-ium Chemical compound C1=CC=C2[NH2+]C=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-O 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
［概 要〕
セラミックス超伝導配線に関し、
電流密度の向上、配線の劣化の防止、配線間や電極との
接触特性の向上、配線と周辺材料との反応防止を目的と
して、
セラミックス配線の横断面の周りを貴金属で覆うように
構成する。[Detailed Description of the Invention] [Summary] Regarding ceramic superconducting wiring, this invention aims to improve current density, prevent wiring deterioration, improve contact characteristics between wirings and with electrodes, and prevent reactions between wiring and surrounding materials. , The cross section of the ceramic wiring is covered with precious metal.
［産業上の利用分野〕
本発明はセラミックス超伝導配線に関する。近年、高温
超伝導材の開発は目ざましく、液体窒素温度以上で超伝
導を示す材料が多く発見されている。このような材料の
応用としてＩＣ配線や基板間配線材は、半導体素子の低
温動作化と線幅の微細化により、抵抗がゼロというこの
材料の特長がクローズアップされている。[Industrial Field of Application] The present invention relates to ceramic superconducting wiring. In recent years, the development of high-temperature superconducting materials has been remarkable, and many materials that exhibit superconductivity at temperatures above liquid nitrogen temperatures have been discovered. Applications of such materials include IC wiring and inter-substrate wiring materials, and due to lower temperature operation of semiconductor elements and miniaturization of line widths, the feature of this material, which is zero resistance, is attracting attention.
（従来の技術］
上記のような高温超伝導材の配線化については盛んに研
究、開発が続けられている段階であるが、基本的には、
従来法に従い、にｇＯ単結晶その他の基板上に、薄膜法
あるいは厚膜法でセラミックス超伝導膜を形成した後、
必要に応じてエツチングその他でバターニングして作製
される。(Prior art) Although the wiring of high-temperature superconducting materials as described above is currently being actively researched and developed, basically,
After forming a ceramic superconducting film on a gO single crystal or other substrate by a thin film method or a thick film method according to a conventional method,
It is manufactured by etching or other buttering as necessary.
上記の如くして作製されるセラミックス超伝導配線は、
セラミックス特有の粒界の存在のために、電流密度は必
要な数１０万Ａ／ｃ４に達せず、また磁界にも弱い特性
を示す。また、セラミックス超伝導材は組成の変化に敏
感で、劣化が早く、数ケ月で特性が劣化する問題もある
。さらに１．結晶自体に異方性がある、アルミニウムや
ｉｌｌとの接点がシゴソトキー接合になる、などの問題
のために、配線コンタクトに問題がある。また、セラミ
ックス超伝導材は、シリコンやアルミニウムなどの材料
と反応し２易いという問題もある。The ceramic superconducting wiring produced as described above is
Due to the presence of grain boundaries unique to ceramics, the current density cannot reach the required several hundred thousand A/c4, and it also exhibits weak characteristics against magnetic fields. Additionally, ceramic superconducting materials are sensitive to changes in composition and deteriorate quickly, with the problem that their properties deteriorate in just a few months. Furthermore 1. There are problems with wiring contacts due to problems such as the crystal itself having anisotropy and the contact with aluminum or ill forming a Shigo-Sotky junction. Another problem is that ceramic superconducting materials tend to react with materials such as silicon and aluminum.
従って、本発明は、セラミックス超伝導配線における上
記の如き問題点を解決し、実用レヘルのセラミ２．・ク
ス超伝導配線を提供することを目的とする。Therefore, the present invention solves the above-mentioned problems in ceramic superconducting wiring, and achieves a practical level of ceramic 2.・The purpose is to provide superconducting wiring.
［課題を解決するための手段］
上記目的を達成するために、本発明は、基板上に形成さ
れたセラミックス超伝導配線において、セラミックス超
伝導配線の横断面の周りを貴金属で覆ったことを特徴と
するセラミックス超伝導配線を提供する。[Means for Solving the Problems] In order to achieve the above object, the present invention is characterized in that, in a ceramic superconducting wiring formed on a substrate, a cross section of the ceramic superconducting wiring is covered with a noble metal. We provide ceramic superconducting wiring with
用いるセラミ・ンクス超伝導配線は特に限定されず、１
、ａ系、Ｙ系、Ｂｉ系、ＴＮ系オのいずれにも適用され
る。Ceraminx superconducting wiring to be used is not particularly limited, and 1
, a-based, Y-based, Bi-based, and TN-based.
貴金属としては銀、金、白金などを用いる。貴金属の膜
厚としては、一般に、１０００Å以下であるが、３００
人程度が好適である。Silver, gold, platinum, etc. are used as the precious metal. The thickness of the noble metal film is generally 1000 Å or less, but 300 Å or less
Approximately one person is suitable.
［作 用］
セラミックス超伝導配線の表面を貴金属で覆うことによ
って、１）超伝導電流が貴金属中に数１００人浸み出す
こと（ｐｒｏｘｉｍｉ ｔｙ効果）により、超伝導セラ
ミックスの粒界があっても、周囲の貴金属を介して超伝
導電流が流れて、電流密度が向上する。ｉｉ）貴金属が
保護膜として作用し、セラミックス超伝導材の劣化を防
止する。１１１）配線間や電極との接触も貴金属を介す
るので、良好なオーミックコンタクトになる。ｉｖ）シ
リコンやアルミニウムなどの基板、絶縁材その他とセラ
ミックス超伝導材の間で貴金属がハンファー層として作
用し、これらの間の反応を防止する。[Function] By covering the surface of the ceramic superconducting wiring with a precious metal, 1) superconducting current seeps into the precious metal (proximity effect), even if there are grain boundaries of the superconducting ceramic. , a superconducting current flows through the surrounding noble metal, increasing the current density. ii) The noble metal acts as a protective film and prevents the ceramic superconductor from deteriorating. 111) Since contact between wirings and electrodes is also made via noble metal, good ohmic contact is achieved. iv) The noble metal acts as a Humfer layer between the substrate, insulating material, etc. such as silicon or aluminum, and the ceramic superconducting material to prevent reactions between them.
（実施例〕 添付図面を参照して説明する。(Example〕 This will be explained with reference to the attached drawings.
第１図（ａ）を参照すると、ＭｇＱ 、 ５ｒｒｉ０
３サフア・イア、インドリウム安定化ジルコニア（ＹＳ
Ｚ）、シリコンなどの基板１上に恨２を蒸着で厚み３０
０人堆積した上に、スバンタでＹＢａ２Ｃｕ３０ｔ−ｓ
を基板温度６００’Ｃで厚み３０００人形成しくＹＢａ
ｚＣｕＪ□４層３）、さらにその上に銀３を厚み３００
人に蒸着で堆積する。Referring to FIG. 1(a), MgQ, 5rri0
3 Safaia, Indolium Stabilized Zirconia (YS
Z), a layer 2 is deposited on a substrate 1 such as silicon to a thickness of 30 mm.
0 people deposited, and YBa2Cu30t-s at Svantha
The substrate temperature is 600'C and the thickness is 3000mm.
zCuJ□4 layer 3), and then add silver 3 to a thickness of 300
It is deposited on people by vapor deposition.
第１図（ｂ）を参照すると、次に銀膜３上にレジスｌ−
４を塗布し、常法に従って露光し、バターニングする。Referring to FIG. 1(b), next, a resist l-
4 is applied, exposed and buttered according to a conventional method.
第１図（Ｃ）を参照すると、レジストパターン４をマス
クとして銀膜４、ＹＢａｚＣｕｘＯｌ−５層３、及びｉ
艮ＩＦＪ２をバターニングする。これによってＹＢａ２
Ｃｕ１０７→層３の配線パターンが得られる。Referring to FIG. 1(C), using the resist pattern 4 as a mask, the silver film 4, the YBazCuxOl-5 layer 3, and the i
Buttering the IFJ2. By this, YBa2
A wiring pattern of Cu107→layer 3 is obtained.
第１図（ｄ）を参照すると、本発明では、超伝導配線の
側面も銀で覆うために、再び根５を厚み２００人に蒸着
する。このとき、ＹＢａ２Ｃｕ３０ｔ−５層３の側面を
も銀が覆うように蒸着する。Referring to FIG. 1(d), in the present invention, in order to cover the sides of the superconducting wiring with silver, the root 5 is again deposited to a thickness of 200 mm. At this time, silver is deposited so as to cover the side surfaces of the YBa2Cu30t-5 layer 3 as well.
それから、第１図（ｅ）に示す如く、銀膜５をバターニ
ングして、ＹＢａｚＣｕ、０−＋−１層３の横断面の周
りを銀で覆った超伝導配線を得る。Then, as shown in FIG. 1(e), the silver film 5 is patterned to obtain a superconducting wiring in which the cross section of the YBazCu 0-+-1 layer 3 is covered with silver.
上記実施例の変形は自明である。例えば、第２図の如く
、多層化して超伝導体の表面積を増やして超伝導電流を
増加させることができる（超伝導電流は超伝導体の表面
から数１００人の範囲内の貴金属中を流れる。）第２図
中、１は基板、７は超伝導層、８は貴金属膜である。ま
た、貴金属は、上下面と側面などで異なる貴金属でよい
。さらに、貴金属で覆った超伝導配線の基板表面には絶
Ｉｉ物層を設けてもよい。Variations on the above embodiment are obvious. For example, as shown in Figure 2, it is possible to increase the superconducting current by increasing the surface area of the superconductor by adding multiple layers (superconducting current flows through precious metals within a range of several hundred people from the surface of the superconductor). ) In Fig. 2, 1 is a substrate, 7 is a superconducting layer, and 8 is a noble metal film. Further, the noble metal may be a different noble metal for the upper and lower surfaces and the side surfaces. Furthermore, an insulating material layer may be provided on the surface of the substrate of the superconducting wiring covered with noble metal.
本発明によれば、セラミックス超伝導配線において、ｉ
）電流密度が数１０万Ａ ／ ｃｍ！に向上し、ｉｉ）
電気特性の経時劣化が防止、抑制され、ｉｉｉ ）配線
間や電極とのオーミンクコンタクトをとることが可能に
なり、ｉｖ）シリコンなどの反応し易い基板上などにも
配線を形成できるようになる。According to the present invention, in the ceramic superconducting wiring, i
) Current density is several hundred thousand A/cm! ii)
Deterioration of electrical properties over time is prevented and suppressed, iii) it becomes possible to make ohmink contact between wirings and with electrodes, and iv) wiring can be formed even on reactive substrates such as silicon. .
第１図（ａ）〜（ｅ）は本発明の実施例の超伝導配線の
製造工程要部を示す断面図、第２図は本発明の他の実施
例を示す断面図である。
１・・・基板、 ２．４．６・・・銀膜、
３ ・＝ＹＢａ、Ｃｕ＊０７−８層、 ５・・・レジ
スト、７・・・超伝導層、 ８・・・貴金属膜。FIGS. 1(a) to 1(e) are cross-sectional views showing the main parts of the manufacturing process of a superconducting interconnection according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing another embodiment of the present invention. 1...Substrate, 2.4.6...Silver film,
3.=YBa, Cu*07-8 layer, 5... Resist, 7... Superconducting layer, 8... Noble metal film.
Claims (1)
て、セラミックス超伝導配線の横断面の周りを貴金属で
覆ったことを特徴とするセラミックス超伝導配線。1. A ceramic superconducting wiring formed on a substrate, characterized in that a cross section of the ceramic superconducting wiring is covered with a noble metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1013103A JPH02194567A (en) | 1989-01-24 | 1989-01-24 | Ceramic superconductive wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1013103A JPH02194567A (en) | 1989-01-24 | 1989-01-24 | Ceramic superconductive wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02194567A true JPH02194567A (en) | 1990-08-01 |
Family
ID=11823818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1013103A Pending JPH02194567A (en) | 1989-01-24 | 1989-01-24 | Ceramic superconductive wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02194567A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011052736A1 (en) * | 2009-10-30 | 2011-05-05 | 財団法人国際超電導産業技術研究センター | Low ac-loss multi-filament type superconductive wire material, and manufacturing method thereof |
-
1989
- 1989-01-24 JP JP1013103A patent/JPH02194567A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011052736A1 (en) * | 2009-10-30 | 2011-05-05 | 財団法人国際超電導産業技術研究センター | Low ac-loss multi-filament type superconductive wire material, and manufacturing method thereof |
| JP2011096566A (en) * | 2009-10-30 | 2011-05-12 | International Superconductivity Technology Center | Low ac-loss multifilament type superconductive wire material, and method of manufacturing the same |
| CN102598156A (en) * | 2009-10-30 | 2012-07-18 | 公益财团法人国际超电导产业技术研究中心 | Low ac-loss multi-filament type superconductive wire material, and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2538096B2 (en) | Superconducting element | |
| CA1140682A (en) | Intermetallic barrier region for gold conductor contacts | |
| JPH0715990B2 (en) | Semiconductor device | |
| JP2002522927A (en) | Electrically stabilized thin film high temperature superconductor and method of manufacturing the same | |
| US5219828A (en) | Method for fabricating oxide superconducting coatings | |
| JP3365945B2 (en) | In-line resistor for superconducting circuit and method of manufacturing the same | |
| EP0419361B1 (en) | Electrode for electrical connection to oxide superconductor and method for forming the same | |
| JPH02194567A (en) | Ceramic superconductive wire | |
| JP2954562B2 (en) | Superconducting planar circuit and manufacturing method thereof | |
| US5212150A (en) | Oxide superconducting lead for interconnecting device component with a semiconductor substrate via at least one buffer layer | |
| JPS5923120B2 (en) | Josephson integrated circuit with multilayer structure | |
| JP2504498B2 (en) | Semiconductor device | |
| JP2955407B2 (en) | Superconducting element | |
| US5227361A (en) | Oxide superconducting lead for interconnecting device component with a semiconductor substrate via at least one buffer layer | |
| JP2825374B2 (en) | Superconducting element | |
| JP3011411B2 (en) | Superconducting element | |
| JP2945010B2 (en) | Semiconductor device | |
| JP2829173B2 (en) | Superconducting element | |
| JP2747557B2 (en) | Superconductor device | |
| JPH01125957A (en) | Superconductor device | |
| JPS63275144A (en) | Superconductor device | |
| JPH03156983A (en) | Superconducting device | |
| JP2698364B2 (en) | Superconducting contact and method of manufacturing the same | |
| JPS63299250A (en) | Manufacture of semiconductor device | |
| JPH01135064A (en) | Semiconductor device |