JPH02186586A - Formation of oxidation-resistant coating on sic heating body - Google Patents
Formation of oxidation-resistant coating on sic heating bodyInfo
- Publication number
- JPH02186586A JPH02186586A JP483789A JP483789A JPH02186586A JP H02186586 A JPH02186586 A JP H02186586A JP 483789 A JP483789 A JP 483789A JP 483789 A JP483789 A JP 483789A JP H02186586 A JPH02186586 A JP H02186586A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- source
- silica
- oxidation
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 19
- 238000000576 coating method Methods 0.000 title claims abstract description 16
- 230000003647 oxidation Effects 0.000 title claims description 11
- 238000007254 oxidation reaction Methods 0.000 title claims description 11
- 239000011248 coating agent Substances 0.000 title abstract description 15
- 230000015572 biosynthetic process Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 3
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 229910052700 potassium Inorganic materials 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 230000020169 heat generation Effects 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- SXQXMCWCWVCFPC-UHFFFAOYSA-N aluminum;potassium;dioxido(oxo)silane Chemical compound [Al+3].[K+].[O-][Si]([O-])=O.[O-][Si]([O-])=O SXQXMCWCWVCFPC-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Landscapes
- Resistance Heating (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明はＳｉＣ発熱体の耐酸化性コーティングの形成
方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention This invention relates to a method of forming an oxidation-resistant coating on a SiC heating element.
従来の技術
ＳｉＣ発熱体は簡便な熱源として各種工業において、酸
化物、ガラス等の溶解、加熱、焼成等の処理に幅広く使
用されている。BACKGROUND OF THE INVENTION SiC heating elements are widely used as a simple heat source in various industries for melting, heating, firing, etc. of oxides, glass, etc.
発明が解決しようとする課題
ＳｉＣ発熱体は非酸化物であるために、酸化に対して弱
い面があり、特に高温で発熱する発熱部では、酸化によ
り生成されるシリカとＳｉＣの熱膨張差により、マイク
ロクラックが発生して折損に至り、ライフが短かかった
。Problems to be Solved by the Invention Since SiC heating elements are non-oxides, they are vulnerable to oxidation, and in particular in heat generating parts that generate heat at high temperatures, due to the difference in thermal expansion between silica and SiC produced by oxidation. , microcracks occurred, resulting in breakage, resulting in a short life.
発明の目的
この発明は、折損を生じないＳｉＣ発熱体の耐酸化性コ
ーティングの形成方法を提供することを目的とする。OBJECTS OF THE INVENTION It is an object of the present invention to provide a method for forming an oxidation-resistant coating on a SiC heating element that does not cause breakage.
発明の要旨
本発明は請求項に記載のＳｉＣ発熱体の耐酸化性コーテ
ィングの形成方法を要旨としている。SUMMARY OF THE INVENTION The present invention is directed to a method of forming an oxidation-resistant coating on a SiC heating element as set forth in the claims.
課題を解決するための手段
本発明は、ＳｉＣの表面に平均粒径１μｍ以下のＳ ｉ
Ｃ，シリカ源となる物質、ＡＪＯ３となる物質、アル
カリ金属を混合して塗布あるいは含浸させ、ＳｉＣを３
５〜５０％、シリカ源となる物質をシリカ換算で１５〜
３５％、Ｋ源を５〜１５％、Ａｌ源を１〜１０％含有さ
せ、この塗布したコーティング材料を不活性雰囲気中で
１０００℃以上の温度で焼結させる、あるいは自己発熱
により１３００℃以上に発熱させて被膜を強固に形成さ
せることを特徴とする。本発明の要旨はＳｉＣ＋シリカ
にカリウム源を添加して融点を下げることにより一旦均
−な膜を形成させ、さらに添加したＡ／源と反応させる
ことによりガラス層からカリウム・アルミニウム・シリ
ケートを形成させ、膜の強度を向」ニさせ且つ、熱膨張
をＳｉＣに近づけることを特徴としている。Means for Solving the Problems The present invention provides SiC with an average particle diameter of 1 μm or less on the surface of SiC.
C, a substance that becomes a silica source, a substance that becomes AJO3, and an alkali metal are mixed and coated or impregnated to form SiC 3.
5-50%, silica source material 15-50% in terms of silica
The applied coating material is sintered at a temperature of 1000°C or higher in an inert atmosphere, or heated to 1300°C or higher by self-heating. It is characterized by generating heat to form a strong coating. The gist of the present invention is to form a uniform film by adding a potassium source to SiC + silica to lower the melting point, and then to form potassium aluminum silicate from the glass layer by reacting with the added A/source. It is characterized by improving the strength of the film and bringing the thermal expansion closer to that of SiC.
ＳｉＣの粒度を１−μｍ以下に限定するのは、焼結時に
酸化を進行させ易くすることにより、シリカとＳｉＣと
の結合を強固にするためである。The reason why the particle size of SiC is limited to 1-μm or less is to facilitate the progress of oxidation during sintering, thereby strengthening the bond between silica and SiC.
アルカリ源を混合させるのは、シリカの融点が１８００
℃以」二であり、１３００６Ｃ程度の温度ではコーティ
ングが施されないからである。ＳｉＣが３５％より少な
いとシリカが過剰になりヒートサイクルでコーテイング
膜にクラックが入ることにより好ましくない。The reason for mixing the alkali source is that the melting point of silica is 1800.
This is because the coating is not applied at a temperature of about 13006C. If the SiC content is less than 35%, the silica content will be excessive and the coating film will crack during heat cycles, which is undesirable.
ＳｉＣが５０％より多いと膜中のガラス分が少なくなり
良好な膜が得られないことにより好ましくない。If the SiC content exceeds 50%, the glass content in the film decreases, making it impossible to obtain a good film, which is not preferable.
シリカ源がシリカ換算て」−５％より少ないと膜の強度
が低下することにより好ましくない。またシリカ源が３
５％より多いと膜の熱膨張が本体よりも２０％以」二低
くなることにより好ましくない。Ａｌ源が１％より少な
いと膜の融点が１０００ ’Ｃ以下に低下し、通常使用
で発泡することにより好ましくない。Ａｌ源が１０％よ
り多いと膜の融点が１７５０℃以上になり、均一な膜を
形成することが困難になることにより好ましくない。Ｋ
源が５％より少ないと膜の融点に対して効果が小さくな
り、加熱してもコーテイング膜が均一に分散しないこと
により好ましくない。Ｋ源が１５％より多いと過剰のＫ
がＳｉＣを腐食しＳｉＣの組織を破壊せしめることによ
り好ましくない。If the silica source is less than -5% in terms of silica, the strength of the membrane decreases, which is undesirable. Also, the silica source is 3
If it is more than 5%, the thermal expansion of the membrane becomes 20% or more lower than that of the main body, which is not preferable. If the Al source is less than 1%, the melting point of the film will drop below 1000'C, which is undesirable as it will foam during normal use. If the Al source is more than 10%, the melting point of the film will be 1750° C. or higher, making it difficult to form a uniform film, which is not preferable. K
If the amount of source is less than 5%, the effect on the melting point of the film will be small, and the coating film will not be uniformly dispersed even when heated, which is undesirable. Excess K if the K source is more than 15%
is undesirable because it corrodes SiC and destroys the structure of SiC.
間接加熱あるいは自己発熱温度が１３００００より低い
温度であると、シリカおよびＫからなるガラス成分がＡ
ｌと反応し難いことから好ましくない。If the indirect heating or self-heating temperature is lower than 130,000, the glass component consisting of silica and K
It is not preferable because it is difficult to react with l.
本発明によりコーティングを施したＳｉＣ発熱体は第１
図に示した。発熱部１は再結晶ＳｉＣからなり、耐酸化
性コーティング２が施されている。端子部３はコーティ
ングされてない。The SiC heating element coated according to the present invention is first
Shown in the figure. The heat generating part 1 is made of recrystallized SiC and is coated with an oxidation-resistant coating 2. The terminal portion 3 is not coated.
本発明の方法により得られた具体的な実施例を表−１に
示す。Table 1 shows specific examples obtained by the method of the present invention.
本発明により形成された耐酸化性コーティングを有する
ＳｉＣ発熱体と従来のＳｉＣ発熱体についてライフテス
トした結果を表−２に示す。このライフテストは、大気
中で１２００℃で５００時間連続的に通電させた場合の
抵抗増加率を測定している。抵抗増加率が太きいとライ
フが短いことは既に知られている。表−２では本発明の
方法によりコーティングを形成した実施例は従来例のも
のより４倍以上ライフがのびたことが確認された。Table 2 shows the results of a life test on a SiC heating element having an oxidation-resistant coating formed according to the present invention and a conventional SiC heating element. This life test measures the resistance increase rate when electricity is continuously applied for 500 hours at 1200° C. in the atmosphere. It is already known that the higher the resistance increase rate, the shorter the life. In Table 2, it was confirmed that the life of the examples in which coatings were formed by the method of the present invention was four times longer than that of the conventional examples.
発明の詳細
な説明したように、本発明によればコ
ティングしない従来ＳｉＣ発熱体に比べてライフを４倍
以上に長くすることができる。As described in detail, according to the present invention, the life can be extended by more than four times as compared to the conventional SiC heating element without coating.
第１図は耐酸化性コーティングの施されたＳｉＣ発熱体
の実施例を示す図である。
１・・・発熱部
２・・・コーティング
代 理 人 弁理士 １） 辺 徹表FIG. 1 shows an example of a SiC heating element provided with an oxidation-resistant coating. 1...Heating part 2...Coating agent Patent attorney 1) Toruyoshi side
Claims (1)
アルカリ金属を混合して塗布あるいは含浸させ、ＳｉＣ
を３５〜５０％、シリカ源となる物質をシリカ換算で１
５〜３５％、Ｋ源を５〜１５％、Ａｌ源を１〜１０％含
有させ、間接加熱あるいは自己発熱により１３００℃以
上に加熱させて被膜を強固に形成させることを特徴とす
るＳｉＣ発熱体の耐酸化性コーティングの形成方法。[Claims] SiC with an average particle size of 1 μm or less on the surface of SiC, a substance that becomes a silica source, a substance that becomes Al_2O_3,
SiC is coated or impregnated with an alkali metal mixture.
35 to 50%, and the silica source substance is converted to 1 silica.
5 to 35%, a K source of 5 to 15%, and an Al source of 1 to 10%, and is heated to 1300°C or higher by indirect heating or self-heating to form a strong film. Method of forming oxidation-resistant coatings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP483789A JP2727342B2 (en) | 1989-01-13 | 1989-01-13 | Method for forming oxidation-resistant coating on SiC heating element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP483789A JP2727342B2 (en) | 1989-01-13 | 1989-01-13 | Method for forming oxidation-resistant coating on SiC heating element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02186586A true JPH02186586A (en) | 1990-07-20 |
| JP2727342B2 JP2727342B2 (en) | 1998-03-11 |
Family
ID=11594805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP483789A Expired - Fee Related JP2727342B2 (en) | 1989-01-13 | 1989-01-13 | Method for forming oxidation-resistant coating on SiC heating element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2727342B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0481957U (en) * | 1990-11-26 | 1992-07-16 |
-
1989
- 1989-01-13 JP JP483789A patent/JP2727342B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0481957U (en) * | 1990-11-26 | 1992-07-16 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2727342B2 (en) | 1998-03-11 |
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