JPH02186351A - Photosensitive agent for positive type photoresist - Google Patents

Photosensitive agent for positive type photoresist

Info

Publication number
JPH02186351A
JPH02186351A JP470089A JP470089A JPH02186351A JP H02186351 A JPH02186351 A JP H02186351A JP 470089 A JP470089 A JP 470089A JP 470089 A JP470089 A JP 470089A JP H02186351 A JPH02186351 A JP H02186351A
Authority
JP
Japan
Prior art keywords
positive type
type photoresist
quinonediazide compound
photosensitive agent
alkali
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP470089A
Inventor
Masazumi Hasegawa
Teruhisa Kamimura
Yoshitaka Tsutsumi
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Priority to JP470089A priority Critical patent/JPH02186351A/en
Publication of JPH02186351A publication Critical patent/JPH02186351A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To enhance sensitivity, resolution, heat resistance, and a pattern form by forming a photoresist made of a specified 1,2-quinonediazide compound and an alkali-soluble resin.
CONSTITUTION: The photosensitive agent to be used for the positive type photoresist comprises the 1,2-quinonediazide compound represented by formula I in which at least 2 of A1-A10 are -O-D, each independent of each other, and D is -R, -COR, or -SO2R; R is alkyl, aralkyl, or aryl; the rest of them are H, halogen, or alkyl, and at least one is a group having a quinone-diazide group; and X is a single bond, -CO-, -COO-, or the like. The positive type photoresist material comprising the alkali-soluble resin and the 1,2-quinonediazide compound can be used for forming a resist patterns by using ultraviolet rays, far ultraviolet rays, electron beams, X-rays, etc., thus permitting sensitivity, resolution, heat resistance, and process stability to be enhanced.
COPYRIGHT: (C)1990,JPO&Japio
JP470089A 1989-01-13 1989-01-13 Photosensitive agent for positive type photoresist Pending JPH02186351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP470089A JPH02186351A (en) 1989-01-13 1989-01-13 Photosensitive agent for positive type photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP470089A JPH02186351A (en) 1989-01-13 1989-01-13 Photosensitive agent for positive type photoresist

Publications (1)

Publication Number Publication Date
JPH02186351A true JPH02186351A (en) 1990-07-20

Family

ID=11591160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP470089A Pending JPH02186351A (en) 1989-01-13 1989-01-13 Photosensitive agent for positive type photoresist

Country Status (1)

Country Link
JP (1) JPH02186351A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02245754A (en) * 1989-03-17 1990-10-01 Sumitomo Chem Co Ltd Positive type resist composition
US5728504A (en) * 1995-05-25 1998-03-17 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist compositions and multilayer resist materials using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02245754A (en) * 1989-03-17 1990-10-01 Sumitomo Chem Co Ltd Positive type resist composition
US5728504A (en) * 1995-05-25 1998-03-17 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist compositions and multilayer resist materials using the same

Similar Documents

Publication Publication Date Title
JPH04216548A (en) Photomask
JPS6258241A (en) Photosensitive composition
JPH01233443A (en) Pattern forming method
JPH0296755A (en) Photosensitive composition
EP0810475A3 (en) Pattern exposing method using phase shift and mask used therefor
EP0361907A3 (en) Photoresist compositions for deep uv image reversal
JPS561044A (en) Photosensitive composition
JPH01124848A (en) Image forming method
JPS6325650A (en) Developer for positive type photoresist
JPH025060A (en) Resist pattern forming method
JPS6326653A (en) Photoresist material
JPH04350661A (en) Positive working photosensitive electrostatic master
KR930008139B1 (en) Method for preparation of pattern
JPS57202537A (en) Resist composition for dry development
JPH04251259A (en) Novel resist material and pattern forming method
JPH04233543A (en) Positive type photoresist composition
JPH02285351A (en) Positive type photoresist composition
EP0962825A4 (en) Photosensitive resin composition and process for producing the same
JPH04151156A (en) Photosensitive resin composition
JPH03144650A (en) Near ultraviolet photoresist
JPS6231844A (en) Lithographic plate material
JPS582845A (en) Photomask and pattern evaluating method
JPH04251850A (en) Production of semiconductor element
JPS6221223A (en) Projecting and image-forming device for soft x-rays
JP2003270791A5 (en)