JPH0217634A - Method of doping impurity to semiconductor - Google Patents
Method of doping impurity to semiconductorInfo
- Publication number
- JPH0217634A JPH0217634A JP16820888A JP16820888A JPH0217634A JP H0217634 A JPH0217634 A JP H0217634A JP 16820888 A JP16820888 A JP 16820888A JP 16820888 A JP16820888 A JP 16820888A JP H0217634 A JPH0217634 A JP H0217634A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- substrate
- impurity
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000002019 doping agent Substances 0.000 claims abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000005416 organic matter Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 25
- 239000000758 substrate Substances 0.000 abstract description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 229910052793 cadmium Inorganic materials 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 125000001165 hydrophobic group Chemical group 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000010408 film Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical group OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000005480 straight-chain fatty acid group Chemical group 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体への不純物添加方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of adding impurities to a semiconductor.
従来の技術
半導体への不純物添加方法として、従来、イオン注入法
、拡散法などがある。特にイオン注入法は、拡散法に比
して、制御性良く不純物を添加でき、薄い不純物添加層
を得ることが可能で現在広く用いられている。BACKGROUND OF THE INVENTION Conventional methods for adding impurities to semiconductors include ion implantation, diffusion, and the like. In particular, the ion implantation method is currently widely used because, compared to the diffusion method, it is possible to add impurities with better controllability and to obtain a thin impurity doped layer.
発明が解決しようとする課題
こうした従来のイオン注入法でも、注入エネルギーが１
０ＫＶ前後と限られているため、たとえば５００Å以下
という超極薄の添加層を得ることは、難しかった。Problems to be solved by the invention Even with these conventional ion implantation methods, the implantation energy is 1
Since it is limited to around 0 KV, it has been difficult to obtain an ultra-thin additive layer of, for example, 500 Å or less.
課題を解決するだめの手段
本発明は上記の課題に鑑みなされたもので、不純物原子
を含んだラングミュア・プロジェット膜（以下ＬＢ膜と
呼ぶ）を半導体表面に制御性よく所望の厚さの分子層数
を付着させた後、酸素（０２）プラズマを用いて、カー
ボン（Ｃ）や水１（Ｈ）等の有機物を除去した後、不純
物原子を半導体表面に制御性よく付着させた後、高温で
アニールするものである。Means for Solving the Problems The present invention has been made in view of the above problems, and it is possible to apply a Langmuir-Prodgett film (hereinafter referred to as LB film) containing impurity atoms onto a semiconductor surface to a desired thickness of molecules with good controllability. After several layers have been deposited, organic substances such as carbon (C) and water 1 (H) are removed using oxygen (02) plasma, and impurity atoms are deposited on the semiconductor surface with good control. It is annealed.
作用
本発明によれば、制御性よく不純物原子を所望の原子数
だけ半導体表面に付着することができ、再現性良く、５
００Å以下の極薄の不純物添加層を得ることが可能であ
る。According to the present invention, it is possible to attach a desired number of impurity atoms to the semiconductor surface with good controllability, and with good reproducibility.
It is possible to obtain an extremely thin impurity doped layer of 00 Å or less.
実施例
以下、半導体基板としてＧａＡｓ を用い、Ｐ型層を形
成する例について説明する。EXAMPLE An example in which a P-type layer is formed using GaAs as a semiconductor substrate will be described below.
第１図に示すように、角型水槽ＩＫ、２．５Ｘ１ｏ’Ｍ
／ｅのＣｄＣｅ２を加えた蒸留水を満たす。As shown in Figure 1, square aquarium IK, 2.5X1o'M
Fill with distilled water with /e of CdCe2 added.
この角型水槽１の内側には、ポリプロピレン製の枠２が
水平につられ、２次元のシリンダとして水面を仕切−で
いる。枠の内側には浮子３があり、２次元のピストンと
して滑らかに左右に動かせるようになっており、この浮
子はおもり４によって右方に引っ張られるが浮子上ＫＩ
＆り付けられた磁石５は、他の磁石６を近づけ反発力を
及ぼして左方へ押し戻したり停止させたりできるように
なっている。A frame 2 made of polypropylene is hung horizontally inside the rectangular water tank 1 to partition the water surface as a two-dimensional cylinder. There is a float 3 inside the frame, which can be moved smoothly from side to side as a two-dimensional piston, and this float is pulled to the right by a weight 4, but the float KI
The magnet 5 that is attached to the magnet 5 can bring another magnet 6 close to it and exert a repulsive force to push it back to the left or stop it.
浮子が左いっばいになったところで、直鎖脂肪酸ＣＨ，
−（ＯＨ２）ｎ、Ｃ０ＯＨ（以下Ｏｎと略す）を６）＜
１ｏ’Ｍ／ｇの溶度でクロロホルムに溶かした展開溶液
を数滴（〜０．０５ｍｅ ）滴下すると、クロロホルム
が速やかに蒸発し、水面は−様な単分子膜で覆われるの
で、浮子を押し戻している磁石を徐々に右方へ遠ざける
と、浮子は膜を圧縮しながら右へ移動しやがて停止し、
表面圧がかかる。When the float is all the way to the left, straight chain fatty acids CH,
-(OH2)n, C0OH (hereinafter abbreviated as On) is 6)<
When a few drops (~0.05 me) of a developing solution dissolved in chloroform with a solubility of 1 o'M/g are dropped, the chloroform evaporates quickly and the water surface is covered with a --like monomolecular film, which pushes the float back. When the magnet is gradually moved away to the right, the float moves to the right while compressing the membrane and eventually stops.
Surface pressure is applied.
表面圧としては３０Ｘ１０−’Ｎ／ｍが適している。A suitable surface pressure is 30 x 10-'N/m.
ＬＢ単分子膜の展開に先立ってＧａＡｓ基板７を下降さ
せ水相に浸し、単分子膜を展開、圧縮した後基板を徐々
に引き上げると、第２図ａに示すように、基板表面に第
１層だけ分子膜が形成される。Prior to the development of the LB monomolecular film, the GaAs substrate 7 is lowered and immersed in the aqueous phase, and after the monomolecular film is developed and compressed, the substrate is gradually pulled up. As shown in FIG. Only the layers form a molecular film.
この分子膜の親水基部分ＫＣｄ原子が含まれている。引
き続き浸漬、引き上げを繰り返して任意の単分子層を累
積する。（第２図す、ｃ）こうして得られたＧａＡｓ基
板Ｔ上の３分子層を０２ プラズマ中で処理すると疎水
基の炭化水素鎖を除去することができ、第３図ＩＬＶｃ
示すようにＣｄ原子４０からなる原子層８をＧａＡＳ基
板上に形成することが可能となる。The hydrophilic group portion of this molecular membrane contains KCd atoms. Subsequently, dipping and pulling are repeated to accumulate an arbitrary monolayer. (Fig. 2, c) When the triple molecular layer thus obtained on the GaAs substrate T is treated in 02 plasma, the hydrocarbon chains of the hydrophobic groups can be removed, and Fig. 3 ILVc
As shown, it becomes possible to form an atomic layer 8 consisting of Cd atoms 40 on the GaAS substrate.
次に同図ｂＫ示すように、Ｃｄ原子層８上に５ｉｎ２又
はＳｉＮ等の絶縁膜又はＷＳｉ等の高融点金属膜よりな
る保護膜９を形成した後、高温でアニール（たとえば、
赤外線ランプ等で、９００’Ｃ。Next, as shown in FIG.
900'C with an infrared lamp etc.
１０秒程度）を行ない、同図Ｃに示すようＫＣａ拡散の
Ｐ型層１ｏを形成するものである。こうして形成された
Ｐ型層１０は、数原子層の不純物原子から形成されるた
め、ＳＯＯ八以への極薄層を形成することが可能である
。Ｐ型層１０の厚さは、形成する不純物原子層の数、お
よび、アニール条件を選ぶことにより、所望の厚さに調
節することができる。10 seconds) to form a KCa-diffused P-type layer 1o as shown in FIG. Since the P-type layer 10 thus formed is formed from several atomic layers of impurity atoms, it is possible to form an extremely thin layer of SOO. The thickness of the P-type layer 10 can be adjusted to a desired thickness by selecting the number of impurity atomic layers to be formed and the annealing conditions.
発明の効果
以上のべたように、ドーパントとなる不純物原子を含ん
だＬＢ膜を所望の分子層だけ半導体表面に付着させた後
、０２ プラズマ処理により、有機物（ＣとＨ）を除去
して、不純物原子層だけを半導体表面に付着した後、保
護膜を用いて高温でアニールすることにより、制御性良
く６００Å以下の極薄の不純物添加層を得ることが可能
である。Effects of the Invention As described above, after attaching a desired molecular layer of the LB film containing impurity atoms serving as dopants to the semiconductor surface, 02 plasma treatment is performed to remove organic substances (C and H) and remove the impurities. By depositing only an atomic layer on the semiconductor surface and then annealing it at high temperature using a protective film, it is possible to obtain an extremely thin doped layer of 600 Å or less with good controllability.
以上の説明ではＧａＡｓ［Ｃｄを添加した場合について
述べたが、他の半導体基板、不純物原子についても同様
であることはいうまでもない。In the above description, the case where GaAs[Cd is added is described, but it goes without saying that the same applies to other semiconductor substrates and impurity atoms.
第１図はラングミュア・プロジェット法のＬＢ膜作製装
置の概略図、第２図はＬＢ膜の累積状況を示す要部断面
図、第３図はＧａＡｓ基板への本発明の一実施例のＣ（
１不純物添加方法を示す工程断面図である。
７・・・・・・ＧａＡｓ基板、８・・・・・・Ｃｄ ３
原子層、９・・・・・・保護膜、１０・・・・・・Ｐ型
層。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名第
図
５８子
第
図
（ａ−）Fig. 1 is a schematic diagram of an LB film manufacturing apparatus using the Langmuir-Prodgett method, Fig. 2 is a cross-sectional view of essential parts showing the accumulation state of the LB film, and Fig. 3 is a C coating of an embodiment of the present invention on a GaAs substrate. (
FIG. 1 is a process cross-sectional view showing a method of adding impurities. 7...GaAs substrate, 8...Cd 3
Atomic layer, 9...protective film, 10...P type layer. Name of agent: Patent attorney Shigetaka Awano and one other person Figure 58 (a-)
Claims (1)
ドーパントとなる不純物原子を含んだラングミュア・プ
ロジェット膜を所望の層数付着する工程と、このラング
ミュア・プロジェット膜に酸素プラズマ処理を施し、有
機物を除去する工程と、保護膜を付着させた後、熱処理
を施して前記不純物原子を半導体中に拡散する工程を含
むことを特徴とする半導体への不純物添加方法。On the semiconductor surface, by the Langmuir-Prodgett method,
A process of depositing a desired number of layers of Langmuir-Prodgett film containing impurity atoms to serve as dopants, a process of subjecting this Langmuir-Prodgett film to oxygen plasma treatment to remove organic matter, and after depositing a protective film. A method for adding impurities to a semiconductor, comprising the step of performing heat treatment to diffuse the impurity atoms into the semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16820888A JPH0217634A (en) | 1988-07-06 | 1988-07-06 | Method of doping impurity to semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16820888A JPH0217634A (en) | 1988-07-06 | 1988-07-06 | Method of doping impurity to semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0217634A true JPH0217634A (en) | 1990-01-22 |
Family
ID=15863793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16820888A Pending JPH0217634A (en) | 1988-07-06 | 1988-07-06 | Method of doping impurity to semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0217634A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7732325B2 (en) | 2002-01-26 | 2010-06-08 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US7781326B2 (en) | 2001-02-02 | 2010-08-24 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US10280509B2 (en) | 2001-07-16 | 2019-05-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
-
1988
- 1988-07-06 JP JP16820888A patent/JPH0217634A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7781326B2 (en) | 2001-02-02 | 2010-08-24 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US10280509B2 (en) | 2001-07-16 | 2019-05-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7732325B2 (en) | 2002-01-26 | 2010-06-08 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
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