JPH02175659A - Production of sic heater - Google Patents
Production of sic heaterInfo
- Publication number
- JPH02175659A JPH02175659A JP63327846A JP32784688A JPH02175659A JP H02175659 A JPH02175659 A JP H02175659A JP 63327846 A JP63327846 A JP 63327846A JP 32784688 A JP32784688 A JP 32784688A JP H02175659 A JPH02175659 A JP H02175659A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- heater
- compact
- shape
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000010304 firing Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 238000001354 calcination Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
Landscapes
- Resistance Heating (AREA)
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は焼°成、酸化等を行う熱処理炉用の熱源とし
て用いるＳｉＣヒータの製造方法に関し、特に面状の被
加熱物を均一に加熱できるＳｉＣヒータの製造方法に関
する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a SiC heater used as a heat source for a heat treatment furnace for firing, oxidizing, etc. The present invention relates to a method for manufacturing a heater.
従来の技術
ＳｉＣ発熱体（ヒータ）は各種の工業分野で熱処理炉用
の熱源として広く用いられている。ＳｉＣ発熱体の形状
は棒状、コの字型、ヘアピン型、オーム（Ω）型等各種
のものがある。従来のＳｉＣ発熱体は押し出し成形法に
より作られるのが常であった。押し出し成形法は、粒度
の異なるＳｉＣ粒子を配合し、所定量のバインダーを加
え混練後、押し出し成形機によって所定の形状に成形す
る方法である。押し出し成形法では、渦巻き型のような
複雑に曲りくねった形状の発熱体を製造できない。この
ため２つ以上のＳｉＣ発熱体を結合して複雑な形状の発
熱体を得ていた。BACKGROUND OF THE INVENTION SiC heating elements (heaters) are widely used as heat sources for heat treatment furnaces in various industrial fields. There are various shapes of SiC heating elements, such as a rod shape, a U-shape, a hairpin shape, and an ohm (Ω) shape. Conventional SiC heating elements were typically made by extrusion. The extrusion molding method is a method in which SiC particles with different particle sizes are blended, a predetermined amount of binder is added, kneaded, and then molded into a predetermined shape using an extrusion molding machine. Extrusion molding cannot produce a heating element with a complicated twisting shape such as a spiral. For this reason, two or more SiC heating elements have been combined to obtain a heating element with a complicated shape.
発明が解決しようとする問題点
前述の方法で複雑な形状の発熱体を製造する場合には、
接着技術が重要であるが、その信頼性が不十分であった
。特に接着部の抵抗特性に問題があった。Problems to be Solved by the Invention When manufacturing a heating element with a complicated shape using the method described above,
Adhesion technology is important, but its reliability has been insufficient. In particular, there was a problem with the resistance characteristics of the adhesive part.
また、比較的広い面積を加熱する場合には、例えば棒状
発熱体を２本以上並列に配置して使用しなければならず
、被加熱面を均一に加熱することができなかった。また
、一般に抵抗の制約から発熱部の形状はパイプ状の形状
に限定されていた。Further, when heating a relatively large area, for example, two or more rod-shaped heating elements must be arranged in parallel, making it impossible to uniformly heat the surface to be heated. Furthermore, the shape of the heat generating portion is generally limited to a pipe-like shape due to resistance constraints.
発明の目的
この発明は前述した従来技術の問題点に鑑み、複雑な形
状を持ち、面状の被加熱物を均等に加熱できる広域型の
ＳｉＣヒータの製造方法を提供することを目的とする。OBJECTS OF THE INVENTION In view of the problems of the prior art described above, an object of the present invention is to provide a method for manufacturing a wide-area SiC heater that has a complicated shape and can uniformly heat a planar object to be heated.
問題点を解決するための手段
この発明のＳｉＣヒータの製造方法は、広範囲を加熱す
るヒータ部と電極を接続する端子部を備えたＳｉＣヒー
タを製造する方法であって以下の工程を含むことを特徴
とする。Means for Solving the Problems The method for manufacturing a SiC heater of the present invention is a method for manufacturing a SiC heater that has a heater section that heats a wide area and a terminal section that connects an electrode, and includes the following steps. Features.
ａ）ＳｉＣを主原料として、全体的に平板状の成形体を
作り仮焼成を行う工程と、ｂ） レーザまたはウォー
タージェットによって仮焼成したＳｉＣ成形体を所定形
状に切断する工程と、
Ｃ） 所定形状に切断したＳｉＣ成形体を本焼結する工
程。a) A process of making an overall flat plate-shaped molded body using SiC as the main raw material and pre-firing it, b) A process of cutting the pre-baked SiC molded body into a predetermined shape using a laser or water jet, and C) A predetermined shape. A step of main sintering the SiC molded body cut into a shape.
ヒータ部と端子部は一体としてもよく、別体として製作
し本焼成後に接着してもよい。The heater part and the terminal part may be integrated, or they may be manufactured separately and bonded together after the main firing.
端子部の比抵抗を０．００２オ一ムセンチメートル（０
ｃｍ）以下に設定する場合には、端子部を別体とした方
が有利である。The specific resistance of the terminal part is 0.002 ohm centimeter (0
cm) or less, it is advantageous to separate the terminal portion.
端子部の断面積はヒータ部の断面積の１゜５倍以上であ
ることが望ましい。１．５倍よりも小さい場合には端子
部が発熱する可能性がある。It is desirable that the cross-sectional area of the terminal portion be at least 1.5 times the cross-sectional area of the heater portion. If it is smaller than 1.5 times, there is a possibility that the terminal section will generate heat.
また、ヒータ部及び端子部のエツジ部分は面取りを行う
のが望ましい。エツジ部分が鋭利であると、発熱時にエ
ツジ部分からクラックが発生し易くなる。Further, it is desirable to chamfer the edges of the heater part and the terminal part. If the edge portion is sharp, cracks are likely to occur from the edge portion when heat is generated.
作用効果
この発明によれば、面状の被加熱物を均一に加熱できる
広域型のＳｉＣヒータを製造することかできる。また、
この発明の方法によれば、被加熱物の形状にあわせてＳ
ｉＣヒータの形状を自由に設定できる。Effects According to the present invention, it is possible to manufacture a wide area type SiC heater that can uniformly heat a planar object to be heated. Also,
According to the method of this invention, the S
The shape of the iC heater can be freely set.
実施例
比表面積０．５ｒｒｒ／ｇのｓ ｉ Ｃ微粉４０重量部
と平均粒径８０ミクロンのＳｉＣ粗粉５０重量部とフェ
ノール樹脂系のバインダー１０重量部を混合し、平板状
に成形後、１８００℃で１２０分間仮焼成を行った。Example 40 parts by weight of SiC fine powder with a specific surface area of 0.5 rrr/g, 50 parts by weight of SiC coarse powder with an average particle size of 80 microns, and 10 parts by weight of a phenolic resin binder were mixed, and after molding into a flat plate, Temporary firing was performed at ℃ for 120 minutes.
得られたＳｉＣ仮焼成体をレーザ加工により第１図に示
す渦巻型形状に切断した。このとき、周囲のエツジ部分
の面取りも行った。The obtained pre-fired SiC body was cut into a spiral shape shown in FIG. 1 by laser processing. At this time, the surrounding edges were also chamfered.
切断はウォータージェットまたはＮＣ加工機を用いて行
ってもよい。Cutting may be performed using a water jet or an NC processing machine.
次に、渦巻型ＳｉＣ仮焼成体を、２３００℃で６０分間
焼結して渦巻型ＳｉＣヒーター０を得た。Next, the spiral-shaped SiC pre-sintered body was sintered at 2300° C. for 60 minutes to obtain a spiral-shaped SiC heater 0.
ヒーター０は端子部１１とヒータ部１２から構成される
。ヒータ部１２と端子部１１の断面積の比は１：５に設
定した。The heater 0 is composed of a terminal section 11 and a heater section 12. The ratio of the cross-sectional areas of the heater section 12 and the terminal section 11 was set to 1:5.
ＳｉＣヒータはＦｉｇ、２及びＦｉｇ、３のよウナ形状
にすることも可能である。このように本発明の方法によ
れば、様々な形状のＳｉＣヒータを製造できる。ヒータ
の形状を被加熱物の形状に合せることにより、被加熱物
を均等に加熱できる。The SiC heater can also be made into a shape as shown in FIGS. 2 and 3. As described above, according to the method of the present invention, SiC heaters of various shapes can be manufactured. By matching the shape of the heater to the shape of the object to be heated, the object to be heated can be heated evenly.
また、端子部とヒータ部を別々に製作し、焼成後に接着
してもよい。この場合、ヒーターと端子部とは必ずしも
同一平面上にある必要はなくヒーターに対して端子を垂
直に立てた構造も可能である。（図４）
Ｆｉｇ、１に示したＳｉＣヒータ１０と従来のヒータを
用いて、２００ ｍｍ Ｘ ２００ ｍｍの平板状の被
加熱物を加熱する実験を行った。実験では表面温度を最
大２５０℃まで加熱した。Alternatively, the terminal portion and the heater portion may be manufactured separately and bonded together after firing. In this case, the heater and the terminal portion do not necessarily have to be on the same plane, and a structure in which the terminal is perpendicular to the heater is also possible. (FIG. 4) Using the SiC heater 10 shown in FIG. 1 and a conventional heater, an experiment was conducted to heat a flat object of 200 mm x 200 mm. In the experiment, the surface temperature was heated to a maximum of 250°C.
従来のヒータは棒状ヒータを４本並列に接続したもので
ある。A conventional heater is one in which four rod-shaped heaters are connected in parallel.
実験の結果を第５図に示した。従来の４本並列棒状ヒー
タを用いた場合には、被加熱物の表面温度にむらがあっ
た。−力木発明の渦巻型ＳｉＣヒータを用いた場合には
、被加熱物は均等に加熱されることがわかった。The results of the experiment are shown in Figure 5. When a conventional four-bar heater was used, the surface temperature of the object to be heated was uneven. - It was found that when the spiral SiC heater of Rikiki's invention was used, the object to be heated was heated evenly.
なお、本発明は前述の実施例に限定されない。例えば、
ＳｉＣヒータの形状は広域を加熱できる平板状ならば様
々な形状を採用できる。また、ＳｉＣヒータの厚みは任
意でよい。Note that the present invention is not limited to the above-described embodiments. for example,
The SiC heater can have a variety of shapes as long as it is a flat plate that can heat a wide area. Further, the thickness of the SiC heater may be arbitrary.
第１〜４ａ図は本発明のＳｉＣヒータの製造方法により
製造したＳｉＣヒータの実施例を示す平面図、第４ｂ図
は第４ａ図のＡ−Ａ断面図、第５図は本発明によるＳｉ
Ｃヒータと従来のＳｉＣヒータを用いて加熱実験を行っ
た時の温度分布を示すグラフである。
１０．２０，３０．４０・・・ＳｉＣヒータ１１．２１
，３１．４１・・・端子部
１２．２２，３２．４２・・・ヒータ部Ｋ〉
棒状４本並列（従来例）
争
渦巻型（本発明品）
、−−−４−一〇−＋−膚
温度の測定位置（ｍｍ）Figures 1 to 4a are plan views showing examples of SiC heaters manufactured by the method for manufacturing SiC heaters of the present invention, Figure 4b is a sectional view taken along line A-A in Figure 4a, and Figure 5 is a
It is a graph showing temperature distribution when a heating experiment was conducted using a C heater and a conventional SiC heater. 10.20, 30.40...SiC heater 11.21
, 31.41...Terminal part 12.22, 32.42...Heater part K> 4 rods in parallel (conventional example) Spiral type (product of the present invention), ---4-10-+- Skin temperature measurement position (mm)
Claims (1)
る方法。 ａ）ＳｉＣを主原料として成形体を作り、 仮焼成を行う工程と、 ｂ）レーザ，ＮＣ加工機またはウォーター ジェットによって仮焼成したＳｉＣ成形体を所定形状に
切断する工程と、 ｃ）所定形状に切断したＳｉＣ成形体を本 焼結する工程。[Scope of Claim] A method of manufacturing a SiC heater having a heater portion and a terminal portion, the method comprising the following steps. a) A process of making a molded body using SiC as the main raw material and pre-firing it; b) A process of cutting the pre-baked SiC molded body into a predetermined shape using a laser, NC processing machine or water jet; c) A process of cutting the pre-baked SiC molded body into a predetermined shape. A process of main sintering the cut SiC molded body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63327846A JPH02175659A (en) | 1988-12-27 | 1988-12-27 | Production of sic heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63327846A JPH02175659A (en) | 1988-12-27 | 1988-12-27 | Production of sic heater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02175659A true JPH02175659A (en) | 1990-07-06 |
Family
ID=18203634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63327846A Pending JPH02175659A (en) | 1988-12-27 | 1988-12-27 | Production of sic heater |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02175659A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0484731A2 (en) * | 1990-11-05 | 1992-05-13 | Sumitomo Electric Industries, Ltd. | Method of processing an AlN circuit board |
| JP2003007433A (en) * | 2001-06-25 | 2003-01-10 | Bridgestone Corp | Ceramic heater and its manufacturing method |
| KR100856802B1 (en) * | 2006-10-19 | 2008-09-05 | (주) 이노쎄라 | Silicon carbide heater and semiconductor diffusion device having the heater |
| CN114851352A (en) * | 2022-05-23 | 2022-08-05 | 松山湖材料实验室 | Resistance heating element and method of manufacturing the same |
-
1988
- 1988-12-27 JP JP63327846A patent/JPH02175659A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0484731A2 (en) * | 1990-11-05 | 1992-05-13 | Sumitomo Electric Industries, Ltd. | Method of processing an AlN circuit board |
| JP2003007433A (en) * | 2001-06-25 | 2003-01-10 | Bridgestone Corp | Ceramic heater and its manufacturing method |
| KR100856802B1 (en) * | 2006-10-19 | 2008-09-05 | (주) 이노쎄라 | Silicon carbide heater and semiconductor diffusion device having the heater |
| CN114851352A (en) * | 2022-05-23 | 2022-08-05 | 松山湖材料实验室 | Resistance heating element and method of manufacturing the same |
| CN114851352B (en) * | 2022-05-23 | 2023-11-28 | 松山湖材料实验室 | Resistance heating element and method for manufacturing same |
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