JPH02157725A - Liquid crystal element - Google Patents
Liquid crystal elementInfo
- Publication number
- JPH02157725A JPH02157725A JP31127688A JP31127688A JPH02157725A JP H02157725 A JPH02157725 A JP H02157725A JP 31127688 A JP31127688 A JP 31127688A JP 31127688 A JP31127688 A JP 31127688A JP H02157725 A JPH02157725 A JP H02157725A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal element
- ferroelectric liquid
- phase
- ferroelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000005684 electric field Effects 0.000 claims abstract description 18
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 5
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 claims description 29
- 239000004990 Smectic liquid crystal Substances 0.000 claims description 12
- 230000002269 spontaneous effect Effects 0.000 claims description 12
- 230000010287 polarization Effects 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 6
- 210000002858 crystal cell Anatomy 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 125000006850 spacer group Chemical group 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 14
- 230000004044 response Effects 0.000 description 9
- 210000004027 cell Anatomy 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 101710098247 Exoglucanase 1 Proteins 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- JRXXLCKWQFKACW-UHFFFAOYSA-N biphenylacetylene Chemical compound C1=CC=CC=C1C#CC1=CC=CC=C1 JRXXLCKWQFKACW-UHFFFAOYSA-N 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は強誘電性液晶組成物を用いた液晶素子に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a liquid crystal element using a ferroelectric liquid crystal composition.
[従来の技術]
近年、液晶デイスプレィは、薄型、軽量、低消費電力等
の特徴を生かして表示素子として幅広く用いられるよう
になった。しかし、これらの表示素子のほとんどはネマ
チック液晶を用いたTN型表示素子であり、高マルチプ
レツクス化を必要とする応用分野ではまだまだ応答が遅
く、改良の必要がある。このような状況の中で注目され
ているのが光学活性部位を有するカイラルスメクチック
液晶である。[Background Art] In recent years, liquid crystal displays have come to be widely used as display elements due to their characteristics such as thinness, light weight, and low power consumption. However, most of these display elements are TN type display elements using nematic liquid crystals, and their response is still slow in application fields requiring high multiplexing, and improvements are needed. Under these circumstances, chiral smectic liquid crystals having optically active sites are attracting attention.
このカイラルスメクチック液晶のカイラルスメクチック
C相 (以下SmC”相と記す)は、強誘電性を示し、
その自発分極(以下Psと記す)と電界との大きな結合
力のため、TN型液晶表示素子では達成し得ない高速応
答性を示すことが可能である。さらにSmC”相は、十
分に薄いセル内においては、適当な配向制御をする事に
よりメモリー性を示すことが知られており、 (クラー
クら。The chiral smectic C phase (hereinafter referred to as "SmC" phase) of this chiral smectic liquid crystal exhibits ferroelectricity,
Because of the large coupling force between the spontaneous polarization (hereinafter referred to as Ps) and the electric field, it is possible to exhibit high-speed response that cannot be achieved with a TN type liquid crystal display element. Furthermore, it is known that the SmC'' phase exhibits memory properties in sufficiently thin cells by appropriately controlling the orientation (Clarke et al.
アプライド フィジックス レター、 36. 89
9.1980)高速シャッターや、高マルチプレツクス
表示素子としての開発が進んでいる。Applied Physics Letters, 36. 89
9.1980) Development is progressing for high-speed shutters and high multiplex display devices.
強誘電性液晶の応答速度を支配する因子として、Ps、
液晶の粘性、セル内での液晶の配向等が考えられる。−
船釣な液晶組成物はSmC”相の上位・温度でスメクチ
ックA相を(以下SmA相と記す)を示す、この様な相
系列の強誘電性液晶組成物はSmC’相において、温度
の降下に伴ってPSは次第に大きくなり、−船釣には1
0〜30nc/cm2となる。しかしながら、液晶の応
答速度は徐々に遅くなり室温で100〜300μsとな
る。これは温度の降下に伴い液晶の粘性が大きくなるた
めであると考えられる。また、他の液晶化合物において
は大西ら(ナショナル テクニカルレポート* VO
L33.Nol、 Feb、 1987)が示した
ように220 n c / c rrfという大きなP
sをもつ液晶化合物も知られている。この化合物の応答
速度は20μsと非常に速い。即ち液晶の高速応答化は
、Psを大きくすることで容易に達成できるが、Psの
大きな液晶化合物はC1,Coo、OCH3,ON等の
置換基が不斉炭素の部位の近くに位置している場合が多
く、分子骨格から察すると、そのバルク状態での粘性は
かなり大きいと予想される。As factors governing the response speed of ferroelectric liquid crystals, Ps,
Possible factors include the viscosity of the liquid crystal and the orientation of the liquid crystal within the cell. −
A typical liquid crystal composition exhibits a smectic A phase (hereinafter referred to as SmA phase) at a temperature above the SmC' phase.A ferroelectric liquid crystal composition with such a phase series exhibits a smectic A phase (hereinafter referred to as SmA phase) at a temperature above the SmC' phase. As the PS gradually increases, -1 for boat fishing.
0 to 30 nc/cm2. However, the response speed of liquid crystal gradually slows down to 100 to 300 μs at room temperature. This is thought to be because the viscosity of the liquid crystal increases as the temperature decreases. In addition, regarding other liquid crystal compounds, Onishi et al. (National Technical Report* VO
L33. Nol, Feb. 1987) showed that a large P of 220 nc/c rrf
Liquid crystal compounds having s are also known. The response speed of this compound is very fast at 20 μs. That is, high-speed response of liquid crystal can be easily achieved by increasing Ps, but in liquid crystal compounds with large Ps, substituents such as C1, Coo, OCH3, ON, etc. are located near the asymmetric carbon site. In many cases, the viscosity in the bulk state is expected to be quite large, judging from the molecular skeleton.
[発明が解決しようとする課題 ]しかしながら
、液晶の高速応答化のためにPsを大きくすればするほ
ど液晶と基板表面との相互が作用が大きくなり、液晶の
セル内での配向が乱れやすくなる。 第2図〜第4図
に強誘電性液晶セルのスイッチング過程を模式的に示し
た。同図において、11は基体、12は配向膜、13は
Cダイレクタ−14は自発分極、15は液晶と接する基
体表面のダイポールの向き及び大きさを示す。[Problem to be solved by the invention] However, as Ps is increased in order to increase the speed of response of the liquid crystal, the interaction between the liquid crystal and the substrate surface increases, and the alignment of the liquid crystal within the cell becomes more likely to be disturbed. . FIGS. 2 to 4 schematically show the switching process of a ferroelectric liquid crystal cell. In the figure, 11 is a substrate, 12 is an alignment film, 13 is a C director, 14 is spontaneous polarization, and 15 is the direction and size of a dipole on the surface of the substrate in contact with the liquid crystal.
第4図は、基体表面のダイポールの向き及び大きさが等
しい場合である。(b)、 (c)の様に、電界が印
加されている時は、電界の向きに自発分極14が配向す
るが、無電界時には(a)に示したように自発分極14
と基体表面のダイポール15との相互作用が大きく、ど
ちらか一方の基体表面付近でツイスト状態となりやすい
。FIG. 4 shows a case where the dipoles on the substrate surface have the same orientation and size. As shown in (b) and (c), when an electric field is applied, the spontaneous polarization 14 is oriented in the direction of the electric field, but when no electric field is applied, the spontaneous polarization 14 is oriented as shown in (a).
The interaction between the base member and the dipole 15 on the substrate surface is large, and a twisted state is likely to occur near one of the substrate surfaces.
第3図は、基体表面のダイポールの向きが異なる場合で
ある。 (b)・ (c)は、第4図と同様に電界が印
加されていれば、その向きに応じた双安定状態を示して
いる。しかし、無電界時には(a)に示したように両基
体表面のダイポール15の影響で自発分極14が配向し
てしまい、双安定状態のうち一安定状態が非常に安定と
なり片側メモリー状態となる。FIG. 3 shows a case where the orientation of the dipole on the surface of the substrate is different. (b) and (c) show a bistable state depending on the direction when an electric field is applied as in FIG. 4. However, in the absence of an electric field, as shown in (a), the spontaneous polarization 14 is oriented due to the influence of the dipoles 15 on both substrate surfaces, and one of the bistable states becomes extremely stable, resulting in a one-sided memory state.
第2図は基体表面のダイポールの向きは等しいが大きさ
が異なる場合である。電界印加時には(b)、(c)に
示す様に電界の向きに応じた双安定状態を示すが、無電
界時には基体表面のダイポール15の影響で自発分8i
14が配向しくa)の様にツイストの残った片側メモリ
ー状態となる。FIG. 2 shows a case where the dipoles on the surface of the substrate have the same direction but different sizes. When an electric field is applied, a bistable state is shown depending on the direction of the electric field as shown in (b) and (c), but when no electric field is applied, a spontaneous state 8i occurs due to the influence of the dipole 15 on the substrate surface.
14 is oriented, resulting in a one-sided memory state with remaining twist as shown in a).
これらの配向は、いずれも双安定状態のメモリーを利用
する強誘電性液晶のマルチプレックス駆動に適さない。None of these orientations are suitable for multiplex driving of ferroelectric liquid crystals using bistable memory.
この様に、応答速度を速くする目的でPsを大きくすれ
ばするほど、前述したようにツイスト状態、もしくは片
側メモリー状態をとりやすくなる。In this way, the larger Ps is made for the purpose of increasing the response speed, the more easily the twisted state or one-sided memory state is assumed as described above.
一方、液晶素子に駆動波形を印加したときにもPsの大
きさは液晶素子の光学特性に影響する。On the other hand, the magnitude of Ps also affects the optical characteristics of the liquid crystal element when a driving waveform is applied to the liquid crystal element.
我々の詳細な実験によれば液晶素子のしきい値特性はP
sの大きさによって変化する事が判明した。According to our detailed experiments, the threshold characteristic of the liquid crystal element is P
It was found that it changes depending on the size of s.
即ち、第5図に示すような電圧パルスを印加したときに
、第6図に示すように、強誘電性液晶の第一の安定状態
から第二の安定状態へ変化させる時の液晶のしきい値と
、第二の安定状態から第一の安定状態へ変化させる時の
液晶のしきい値とが異なり、マルチプレックス駆動波形
を印加したときには、液晶素子のコントラストが低下す
る。このヒステリシス現象についてのPsの影響を述べ
るならば、Psが大きければ大きいほどヒステリシスが
大きくなるという事が判明した。That is, when a voltage pulse as shown in FIG. 5 is applied, the threshold of the liquid crystal when changing from the first stable state of the ferroelectric liquid crystal to the second stable state as shown in FIG. The threshold value of the liquid crystal when changing from the second stable state to the first stable state is different, and when a multiplex drive waveform is applied, the contrast of the liquid crystal element decreases. To describe the influence of Ps on this hysteresis phenomenon, it has been found that the larger Ps is, the greater the hysteresis becomes.
本発明は前記課題を解決するためのものであり、その目
的とするところはマルチプレックス駆動時において安定
なメモリー性を有し、コントラストが良好な液晶素子を
提供することにある。The present invention is intended to solve the above problems, and its purpose is to provide a liquid crystal element that has stable memory properties and good contrast during multiplex driving.
[課題を解決するための手段]
詳細な研究の結果、我々は強誘電性液晶の自発分極の大
きさに最適値があることを見いだした。[Means for solving the problem] As a result of detailed research, we found that there is an optimal value for the magnitude of spontaneous polarization of ferroelectric liquid crystals.
即ち 本発明の液晶素子は
(1)電極を有する2組の基板間に強誘電性液晶を挟持
してなる液晶セルにおいて、少なくとも一方の電極上に
形成されたアミノシラン等のシランカップリング剤処理
層にラビング処理を施し一軸配向処理を行い、強誘電性
液晶を注入し、そののちさらに交番電界を印加して配向
状態を変化させる事を特徴とする。That is, the liquid crystal element of the present invention includes (1) a liquid crystal cell formed by sandwiching a ferroelectric liquid crystal between two sets of substrates having electrodes, and a layer treated with a silane coupling agent such as aminosilane formed on at least one electrode; It is characterized in that it is subjected to rubbing treatment to perform uniaxial alignment treatment, injected with ferroelectric liquid crystal, and then further applied with an alternating electric field to change the alignment state.
(2)上記液晶素子において、前記強誘電性液晶の、各
々の成分要素のうち少なくとも1種以上がスメクチック
C相を示す液晶化合物である事を特徴とする。(2) The above liquid crystal device is characterized in that at least one of each component of the ferroelectric liquid crystal is a liquid crystal compound exhibiting a smectic C phase.
(3)前記強誘電性液晶の自発分極の大きさの絶対値が
、強誘電性液晶相を示すすべての温度範囲にわたってO
,Inc/cn(〜40nc/cmの範囲にある事を特
徴とする。(3) The absolute value of the spontaneous polarization of the ferroelectric liquid crystal is O over the entire temperature range in which it exhibits a ferroelectric liquid crystal phase.
, Inc/cn (~40 nc/cm).
(4)前記強誘電性液晶の自発分極の大きさの絶対値が
、強誘電性液晶相を示すすべての温度範囲にわたって0
.1nc/cボ〜20 n c / c rriの範囲
にある事を特徴とする。(4) The absolute value of the spontaneous polarization of the ferroelectric liquid crystal is 0 over the entire temperature range in which it exhibits a ferroelectric liquid crystal phase.
.. It is characterized by being in the range of 1 nc/c to 20 nc/c rri.
(5)前記強誘電性液晶が、カイラルスメクチックC相
を示す事を特徴とする。(5) The ferroelectric liquid crystal is characterized in that it exhibits a chiral smectic C phase.
本発明で用いられる液晶素子は、必要に応じて偏光板を
使用することができる。The liquid crystal element used in the present invention can use a polarizing plate if necessary.
本発明で用いられる電極としては、インジウムチンオキ
サイド等の透明電極、もしくは アルミニウム、金等の
金属蒸着膜を用いることができる。As the electrode used in the present invention, a transparent electrode such as indium tin oxide or a metal vapor deposited film such as aluminum or gold can be used.
本発明で用いられる基体としては、ガラス、透明プラス
チック基板、または少なくとも一方が不透明なガラス、
プラスチック、金属等を用いることができる。Substrates used in the present invention include glass, transparent plastic substrates, or glass at least one of which is opaque;
Plastic, metal, etc. can be used.
本発明で用いられる電極上には必要に応じてSiO2等
の絶縁層を設けることができる。An insulating layer such as SiO2 can be provided on the electrode used in the present invention, if necessary.
本発明で用いられる液晶としては、ピリミジン系、ピラ
ジン系、ビフェニル系、エステル系、ピリジン系、ジエ
ステル系、アゾ系、シフ系、トラン系等の強誘電性スメ
クチック液晶を用いる事が出来る。またその他の液晶材
料を用いてもよい。As the liquid crystal used in the present invention, ferroelectric smectic liquid crystals such as pyrimidine type, pyrazine type, biphenyl type, ester type, pyridine type, diester type, azo type, Schiff type, and tolan type can be used. Also, other liquid crystal materials may be used.
本発明で用いられる強誘電性スメクチック液晶の強誘電
性液晶相としては、SmC”相が望ましいが、ほかのカ
イラルスメクチック相も用いることができる。The ferroelectric liquid crystal phase of the ferroelectric smectic liquid crystal used in the present invention is preferably the SmC'' phase, but other chiral smectic phases can also be used.
本発明で用いられる強誘電性液晶のPsの値は0.1〜
40nc/cm2が望ましいが、より望ましくは0.1
〜20 n c / cイである。The value of Ps of the ferroelectric liquid crystal used in the present invention is 0.1 to
40 nc/cm2 is desirable, more preferably 0.1
~20 nc/c i.
本発明のラビング方向は上基板、下基板の成す角度を必
要に応じて変えることができる。一方の基板のみをラビ
ングしてもよい。In the rubbing direction of the present invention, the angle formed by the upper substrate and the lower substrate can be changed as necessary. Only one substrate may be rubbed.
本発明で用いられるシランカップリング剤は、アミノシ
ランが望ましいが、ヴイニルシラン、クロロシラン等の
シランカップリング剤も、用いることができる。The silane coupling agent used in the present invention is preferably aminosilane, but silane coupling agents such as vinylsilane and chlorosilane can also be used.
本発明で印加する交番電界の波高値は、15V〜40V
が望ましいが必要に応じて高くする、または低くするこ
とができる。The peak value of the alternating electric field applied in the present invention is 15V to 40V.
is desirable, but can be made higher or lower as needed.
本発明で印加する交番電界の周波数は、強誘電性液晶が
充分に応答する周波数であり1ヘルツ〜100ヘルツが
望ましいが必要に応じて高くする、または低くすること
ができる。The frequency of the alternating electric field applied in the present invention is a frequency at which the ferroelectric liquid crystal sufficiently responds, and is preferably from 1 hertz to 100 hertz, but it can be made higher or lower as necessary.
以上述べたように本発明は、液晶材料、配向方法の限定
されるものではなく、色々の製造プロセス等にも応用で
きる。以下に実施例を挙げ本発明をさらに具体的に説明
する。As described above, the present invention is not limited to liquid crystal materials or alignment methods, and can be applied to various manufacturing processes. EXAMPLES The present invention will be explained in more detail with reference to Examples below.
[実施例] (実施例1) 本実施例で用いた液晶組成物を以下に示した。[Example] (Example 1) The liquid crystal composition used in this example is shown below.
1)CsH+v@◎0CaH+s
25χ2)CsHn@◎0C6HI3
25χ3)CeH+4COO◎◎C5Hu
15χ4)CBHI?◎◎Coo◎Cs
H++ 15χ本実施例の液晶組成物の
PsO値は14 n c / cボであった。1) CsH+v@◎0CaH+s
25χ2)CsHn@◎0C6HI3
25χ3)CeH+4COO◎◎C5Hu
15χ4) CBHI? ◎◎Coo◎Cs
H++ 15χ The PsO value of the liquid crystal composition of this example was 14 nc/cbo.
透明電極としてITO(インジウムチンオキサイド)を
スパッタした基板表面に、絶縁層としてSiO2を蒸着
し、アミノシラン溶液をスピンナーを用いて塗布した。SiO2 was deposited as an insulating layer on the surface of a substrate on which ITO (indium tin oxide) was sputtered as a transparent electrode, and an aminosilane solution was applied using a spinner.
150°Cで30分焼成しラビング処理を施した。得ら
れた基板を第1図のごとくスペーサーを介して約2μm
のセル厚となるようl二組室て、前記液晶組成物を注入
した。その後15ヘル・人 25vの交番電界を印加し
液晶の配向を整えた。この液晶素子を1 / 64 d
u t yマルチプレックス駆動したところ、メモリ
ー性が良好であり、コントラスト15であった。It was baked at 150°C for 30 minutes and rubbed. The obtained substrate is separated by about 2 μm through a spacer as shown in Figure 1.
The liquid crystal composition was injected into two chambers so that the cell thickness was . Thereafter, an alternating electric field of 15 h/25 V was applied to adjust the orientation of the liquid crystal. This liquid crystal element is 1/64 d
When driven by multiplex, the memory property was good and the contrast was 15.
(実施例2) 本実施例で用いた液晶組成物を以下に示した。(Example 2) The liquid crystal composition used in this example is shown below.
1) CvH+s@@0CaH+a
25χ2)CsHts@◎0CvH+s
25χ3)C8H17◎Coo◎◎CsHo
15χ4)C8H17G@Coo◎C5H
o 152本実施例の液晶組成物のPSの
値は13 n c / cイであった。1) CvH+s@@0CaH+a
25χ2) CsHts@◎0CvH+s
25χ3)C8H17◎Coo◎◎CsHo
15χ4) C8H17G@Coo◎C5H
o152 The PS value of the liquid crystal composition of this example was 13 n c / c i.
実施例1と同様に作成した基板を、スペーサーを介して
約2μmのセル厚となるように組立てた。A substrate prepared in the same manner as in Example 1 was assembled with a spacer interposed therebetween so that the cell thickness was approximately 2 μm.
その後上記液晶組成物を注入した。その後15ヘル・人
25vの交番電界を印加し液晶の配向を整えた。この
液晶素子を1 / 64 d u t yマルチプレッ
クス駆動したところ、メモリー性が良好であり、コント
ラスト18であった。Thereafter, the above liquid crystal composition was injected. Thereafter, an alternating electric field of 15 h/25 V was applied to adjust the orientation of the liquid crystal. When this liquid crystal element was driven at 1/64 duty multiplex, it had good memory properties and a contrast of 18.
(実施例3) 本実施例で用いた液晶組成物を以下に示した。(Example 3) The liquid crystal composition used in this example is shown below.
2) CsH+e@@octH+s
5z
3)CeH+v@Coo◎◎C5Hu
152本実施例の液晶組成物のPsの値は15nc/c
mであった。2) CsH+e@@octH+s 5z 3) CeH+v@Coo◎◎C5Hu
152 The Ps value of the liquid crystal composition of this example is 15 nc/c
It was m.
実施例1と同様に作成した基板を、スペーサーを介して
約2μmのセル厚となるように組立てた。A substrate prepared in the same manner as in Example 1 was assembled with a spacer interposed therebetween so that the cell thickness was approximately 2 μm.
その後上記液晶組成物を注入した。その後15ヘルツ、
25vの交番電界を印加し液晶の配向を整えた。この液
晶素子を1 / 64 d u t yマルチプレック
ス駆動したところ、メモリー性が良好であり、コントラ
スト15であった。Thereafter, the above liquid crystal composition was injected. Then 15 hertz,
An alternating electric field of 25 V was applied to align the liquid crystal. When this liquid crystal element was driven at 1/64 duty multiplex, the memory property was good and the contrast was 15.
(実施例4)
1)CsHn@@ocaH+a 25
$2 ) C*H+o罷o C3H1325χ3)C8
HI?◎Coo◎◎CsH目 15χ
lCH3
本実施例の液晶組成物のPsの値は16nc/cイであ
った。(Example 4) 1) CsHn@@ocaH+a 25
$2) C*H+o C3H1325χ3)C8
HI? ◎Coo◎◎CsH 15χ
lCH3 The Ps value of the liquid crystal composition of this example was 16 nc/c.
実施例1と同様に作成した基板を、スペーサーを介して
約2μmのセル厚となるように組立てた。その後上記液
晶組成物を注入した。その後15ヘルツ、25vの交番
電界を印加し液晶の配向を整えた。この液晶素子を1/
64dutyマルチブレヅクス駆動したところ、メモリ
ー性が良好であり、コントラスト1日であった。A substrate prepared in the same manner as in Example 1 was assembled with a spacer interposed therebetween so that the cell thickness was approximately 2 μm. Thereafter, the above liquid crystal composition was injected. Thereafter, an alternating electric field of 15 Hz and 25 V was applied to align the liquid crystal. This liquid crystal element is 1/
When driven with a 64 duty multi-breeding system, the memory performance was good and the contrast was 1 day.
以上実施例を述べたが、本発明は上記の実施例のみなら
ず、広く他の液晶材料、配向材料、配向方法などでも同
様の効果が得られる。さらには、本液晶素子は、液晶テ
レビ、液晶デイスプレィ、液晶シャッター等に応用が可
能である。Although the embodiments have been described above, the present invention is not limited to the above-mentioned embodiments, but similar effects can be obtained with a wide variety of other liquid crystal materials, alignment materials, alignment methods, etc. Furthermore, this liquid crystal element can be applied to liquid crystal televisions, liquid crystal displays, liquid crystal shutters, and the like.
[発明の効果]
以上述べたように、本発明によればマルチプレックス駆
動時において安定なメモリー性を有し、コントラストが
良好な液晶素子を提供することができる。[Effects of the Invention] As described above, according to the present invention, it is possible to provide a liquid crystal element that has stable memory properties and good contrast during multiplex driving.
第1図は、本発明の液晶素子を模式的に表した図である
。
第2図(al〜(C)は、強誘電性液晶の配向状態を模
式的に示した図である。
第3図(a)〜(C)は、強誘電性液晶の配向状態を模
式的に示した図である。
第4図(a)〜(C)は、強誘電性液晶の配向状態を模
式的に示した図である。
第5図は、しきい値測定時の印加電圧パルスを示した図
である。
第6図は、しきい値測定時の電圧パルスを印加したとき
の液晶の光学応答を示した図である。
1・基体
2、電極
3°配向膜
4ニスペーサ−
5、液晶
11;基板
12:配向膜
13: Cダイレクタ−
14:自発分極
15:液晶と接する基体表面のダイポールの向き及び大
きさ
以
上
出願人 セイコーエプソン株式会社
代理人 弁理士 鈴木喜三部(他1名)ナ
ト乎−
十
ヒキー
H
(αり
第一′を已
(C)FIG. 1 is a diagram schematically showing a liquid crystal element of the present invention. Figures 2 (al to (C)) are diagrams schematically showing the orientation states of ferroelectric liquid crystals. Figures 3 (a) to (C) are diagrams schematically showing the orientation states of ferroelectric liquid crystals. FIG. 4(a) to (C) are diagrams schematically showing the alignment state of ferroelectric liquid crystal. FIG. 5 is a diagram showing the applied voltage pulse during threshold measurement. FIG. 6 is a diagram showing the optical response of the liquid crystal when a voltage pulse is applied during threshold measurement. 1. Substrate 2, electrode 3° alignment film 4 varnish spacer 5 , Liquid crystal 11; Substrate 12: Alignment film 13: C director 14: Spontaneous polarization 15: Direction and size of the dipole on the surface of the substrate in contact with the liquid crystal Name) Nato - Juhiki H (αri first' wo (C)
Claims (5)
してなる液晶セルにおいて、少なくとも一方の電極上に
形成されたアミノシラン等のシランカップリング剤処理
層にラビング処理を施し一軸配向処理を行い、強誘電性
液晶を注入し、そののちさらに交番電界を印加して配向
状態を変化させる事を特徴とする液晶素子。(1) In a liquid crystal cell in which a ferroelectric liquid crystal is sandwiched between two sets of substrates having electrodes, a layer treated with a silane coupling agent such as aminosilane formed on at least one electrode is subjected to a rubbing treatment to achieve uniaxial alignment. A liquid crystal element characterized in that it undergoes processing, injects ferroelectric liquid crystal, and then further applies an alternating electric field to change its alignment state.
々の成分要素のうち少なくとも1種以上がスメクチック
C相を示す液晶化合物である事を特徴とする請求項1記
載の液晶素子。(2) The liquid crystal device according to claim 1, wherein at least one kind of each component of the ferroelectric liquid crystal is a liquid crystal compound exhibiting a smectic C phase.
、強誘電性液晶相を示すすべての温度範囲にわたって0
.1nc/cm^2〜40nc/cm^2の範囲にある
事を特徴とする請求項1又は2に記載の液晶素子。(3) The absolute value of the spontaneous polarization of the ferroelectric liquid crystal is 0 over the entire temperature range in which the ferroelectric liquid crystal phase is exhibited.
.. 3. The liquid crystal element according to claim 1, wherein the liquid crystal element is in the range of 1 nc/cm^2 to 40 nc/cm^2.
、強誘電性液晶相を示すすべての温度範囲にわたって0
.1nc/cm^2〜20nc/cm^2の範囲にある
事を特徴とする請求項1又は2に記載の液晶素子。(4) The absolute value of the spontaneous polarization of the ferroelectric liquid crystal is 0 over the entire temperature range in which it exhibits a ferroelectric liquid crystal phase.
.. The liquid crystal element according to claim 1 or 2, characterized in that the liquid crystal element is in the range of 1 nc/cm^2 to 20 nc/cm^2.
を示す事を特徴とする請求項1〜3のいずれかに記載の
液晶素子。(5) The liquid crystal device according to any one of claims 1 to 3, wherein the ferroelectric liquid crystal exhibits a chiral smectic C phase.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31127688A JPH02157725A (en) | 1988-12-09 | 1988-12-09 | Liquid crystal element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31127688A JPH02157725A (en) | 1988-12-09 | 1988-12-09 | Liquid crystal element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02157725A true JPH02157725A (en) | 1990-06-18 |
Family
ID=18015186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31127688A Pending JPH02157725A (en) | 1988-12-09 | 1988-12-09 | Liquid crystal element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02157725A (en) |
-
1988
- 1988-12-09 JP JP31127688A patent/JPH02157725A/en active Pending
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