JPH0215643A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0215643A
JPH0215643A JP16530588A JP16530588A JPH0215643A JP H0215643 A JPH0215643 A JP H0215643A JP 16530588 A JP16530588 A JP 16530588A JP 16530588 A JP16530588 A JP 16530588A JP H0215643 A JPH0215643 A JP H0215643A
Authority
JP
Japan
Prior art keywords
cylinder
electrode
welding ring
cap
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16530588A
Other languages
Japanese (ja)
Inventor
Kazuya Urakawa
和也 浦川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16530588A priority Critical patent/JPH0215643A/en
Publication of JPH0215643A publication Critical patent/JPH0215643A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To reduce the assembling cost through repeated use of components by a method wherein a semiconductor element in a stud-type semiconductor device and a spring, the spring applying pressure to and being in contact with a first electrode provided with a bottom-equipped cylinder, are fixed immovable to said bottom-equipped cylinder using a cylindrical screw, and a cap is welded along its flange to said bottom-equipped cylinder using welding rings. CONSTITUTION:A threaded section 12 is provided along the inner circumference of an opening in a first electrode bottom-equipped cylinder 11a, and a flange 13 equipped with a welding ring 13a is provided along the outer circumference. To a part of the circumference of the welding ring 13a facing the outer circumference of a cylinder 11a, a flange 15 is welded, equipped with a welding ring 15a capable of engagement with the welding ring 13a. A semiconductor element 2 is held between electrodes 4 and 11, subjected to pressure exerted by a cylinder equipped with a threaded section 16a engaging the threaded section 12, which cylinder may for example be a Fe-Ni alloy cylinder 14a. The first electrode 11 of an already-assembled semiconductor device may be repeatedly used after unscrewing a cylinder 10 from the bottom-equipped cylinder 11a and dewelding a cap 14 (welding ring 15a) from the electrode 11 (welding ring 13a).

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、スプリングによって半導体素子を押圧保持す
るスタンド形の半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a stand-type semiconductor device in which a semiconductor element is pressed and held by a spring.

〔従来の技術〕[Conventional technology]

従来、この種の半導体装置は第2図に示すように構成さ
れている。これを同図に基づいて説明すると、同図にお
いて、符号1で示すものはその底面上に半導体素子2が
載置された有底筒1aおよびこの有底筒1aの内周面に
突子1bを有しCuあるいはFe−Ni合金からなる第
1の電極、3はこの第1の電極lに溶接され前記有底筒
1aの開口部を閉塞するキャップ、4はこのキャップ1
および前記有底筒1aの内部に設けられスプリングとし
ての皿ばね5によって前記半導体素子2に押圧接触する
フランジ4aを有する第2の電極、6はこの第2の電極
4の周囲に設けられかつ前記フランジ4aと前記皿ばね
5との間に介装されたテフロン製の絶縁筒である。また
、7は前記キャップ3および前記有底筒1a内にN2ガ
スを封入するための管体である。この管体7からN2ガ
スを封入することにより前記半導体素子2の特性が安定
する。なお、前記キャップ3は、Fe−Ni合金からな
る筒体3aと、セラミッりからなるリング3bと、Cu
からなる中継筒3Cとによって構成され、各々が互いに
ろう付けされている。
Conventionally, this type of semiconductor device has been constructed as shown in FIG. To explain this based on the same figure, in the same figure, what is indicated by reference numeral 1 is a bottomed cylinder 1a on which a semiconductor element 2 is placed on the bottom surface, and a protrusion 1b on the inner circumferential surface of this bottomed cylinder 1a. a first electrode made of Cu or Fe-Ni alloy; 3 a cap welded to the first electrode l and closing the opening of the bottomed tube 1a; 4 a cap 1;
A second electrode 6 is provided around the second electrode 4 and has a flange 4a which is provided inside the bottomed cylinder 1a and is pressed into contact with the semiconductor element 2 by a disc spring 5 as a spring. This is an insulating tube made of Teflon that is interposed between the flange 4a and the disc spring 5. Further, 7 is a tube for sealing N2 gas into the cap 3 and the bottomed cylinder 1a. By filling N2 gas from this tube 7, the characteristics of the semiconductor element 2 are stabilized. The cap 3 includes a cylindrical body 3a made of Fe-Ni alloy, a ring 3b made of ceramic, and a Cu
and a relay tube 3C, each of which is brazed to each other.

このようにして、半導体装置を組み立てることができる
In this way, a semiconductor device can be assembled.

先ず、電極1の有底筒1aの底面上に半導体素子2を載
置する。次いで、この半導体素子2上に電極4を載置す
る。しかる後、この電極4のフランジ4a上に絶縁筒6
1皿ばね5を順次載置し、この皿ばね5に所定の圧力を
加えた状態でステーキングによって有底筒1aに突子1
bを設ける。そして、キャップ3によって有底筒1aの
開口部を閉塞し、これを電極1に溶接してから、管体7
から電極1内にN2ガスを封入する。
First, the semiconductor element 2 is placed on the bottom surface of the bottomed cylinder 1a of the electrode 1. Next, an electrode 4 is placed on this semiconductor element 2. After that, an insulating tube 6 is placed on the flange 4a of this electrode 4.
1 disc springs 5 are placed one after another, and with a predetermined pressure applied to the disc springs 5, the projections 1 are placed on the bottomed cylinder 1a by staking.
b. Then, after closing the opening of the bottomed tube 1a with the cap 3 and welding it to the electrode 1, the tube body 7
N2 gas is then filled into the electrode 1.

このようにして、半導体装置を組み立てることができる
In this way, a semiconductor device can be assembled.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで、この種の半導体装置においては、有底筒1a
の底面と突子1bによって第2の電極4が保持され、か
つ第1の電極工とキャップ3の溶接面が小さい寸法に設
定されていることから、−旦半導体装置の組み立てを行
うと、例えば電極1等の構成部品を再度使用することが
できなかった。この結果、組立済みの半導体装置から構
成部品を集めて再度半導体装置を組み立てる場合に、高
価な電極1を新規製作する必要が生じ、組立コストが嵩
むという問題があった。
By the way, in this type of semiconductor device, the bottomed cylinder 1a
Since the second electrode 4 is held by the bottom surface and the protrusion 1b, and the welding surface between the first electrode part and the cap 3 is set to a small size, once the semiconductor device is assembled, for example, Components such as electrode 1 could not be used again. As a result, when assembling the semiconductor device again by collecting component parts from the assembled semiconductor device, it becomes necessary to newly manufacture the expensive electrode 1, resulting in a problem that the assembly cost increases.

本発明はこのような事情に鑑みてなされたもので、構成
部品の再利用による半導体装置の組立時に第1の電極の
新規製作を不要にし、組立コス)−の低廉化を図ること
ができる半導体装置を提供するものである。
The present invention has been made in view of the above circumstances, and provides a semiconductor that eliminates the need to newly manufacture a first electrode when assembling a semiconductor device by reusing component parts, thereby reducing assembly costs. It provides equipment.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係る半導体装置は、その底面上に半導体素子が
載置された有底筒を有する第1の電極と、この第1の電
極に溶接され有底筒の開口部を閉塞するキャップと、こ
のキャップおよび有底筒の内部に設けられ半導体素子に
スプリングによって押圧接触する第2の電極と、この第
2の電極の周囲に設けられかつスプリングの上方に固定
されその周面にねじ部を有する筒体とを備え、この筒体
のねじ部に螺合するねじ部を有底筒の周面に設けると共
に、キャップの周面に嵌合する溶接リングを有するフラ
ンジを設け、このフランジの溶接リング一部を有底筒の
周面に対向させたものである。
A semiconductor device according to the present invention includes: a first electrode having a bottomed tube on the bottom surface of which a semiconductor element is placed; a cap welded to the first electrode to close an opening of the bottomed tube; A second electrode is provided inside the cap and the bottomed cylinder and is pressed into contact with the semiconductor element by a spring, and the second electrode is provided around the second electrode and fixed above the spring, and has a threaded portion on its peripheral surface. A cylindrical body, a threaded portion screwed into the threaded portion of the cylindrical body is provided on the circumferential surface of the bottomed tube, and a flange having a welding ring that fits on the circumferential surface of the cap is provided, and the welding ring of this flange is provided. A part of the cylinder faces the circumferential surface of the bottomed cylinder.

(作 用〕 本発明においては、筒体と有底筒の螺合状態およびキャ
ップと溶接リングの溶接状態を解除することにより、組
立済み半導体装置の第1の電極を再度利用することがで
きる。
(Function) In the present invention, the first electrode of the assembled semiconductor device can be used again by releasing the screwed state between the cylinder and the bottomed pipe and the welded state between the cap and the welding ring.

〔実施例〕〔Example〕

以下、本発明の構成等を図に示す実施例によって詳細に
説明する。
EMBODIMENT OF THE INVENTION Hereinafter, the structure etc. of this invention will be explained in detail by the Example shown in the figure.

第1図は本発明に係る半導体装置を示す断面図で、同図
において第2図と同一の部材およびこの部材に相当する
部材については同一の符号を付し、詳細な説明は省略す
る。同図において、符号11で示す第1の電極における
有底筒11aの開口部内周面にはねじ部12が設けられ
ており、外周面には溶接リング13aを有するフランジ
13が設けられている。このフランジ13の溶接リング
13aの周面一部は、前記有底筒11aの外周面に対向
している。14は前記キャップ3と同一の機能を有する
キャップで、例えばFe−Ni合金からなる筒体14a
、例えばセラミックからなるリング14bおよび例えば
Cuからなる中継筒14cによって構成されている。こ
のうち筒体14aの外周面には、前記溶接リング13a
に嵌合する溶接リング15aを有するフンリング15が
設けられている。16は前記ねじ部12に螺合するねじ
部16aをその外周面に有する筒体で、前記第1の電極
11に着脱自在に装着されており、前記画電極4.11
間に前記半導体素子2を挟圧保持するように構成されて
いる。
FIG. 1 is a cross-sectional view showing a semiconductor device according to the present invention. In the figure, the same members and members corresponding to those in FIG. 2 are designated by the same reference numerals, and detailed explanations thereof will be omitted. In the figure, a threaded portion 12 is provided on the inner circumferential surface of the opening of a bottomed cylinder 11a in the first electrode designated by reference numeral 11, and a flange 13 having a weld ring 13a is provided on the outer circumferential surface. A part of the circumferential surface of the weld ring 13a of this flange 13 faces the outer circumferential surface of the bottomed cylinder 11a. Reference numeral 14 denotes a cap having the same function as the cap 3, and includes a cylindrical body 14a made of, for example, an Fe-Ni alloy.
, a ring 14b made of, for example, ceramic and a relay tube 14c made of, for example, Cu. Of these, the welding ring 13a is provided on the outer peripheral surface of the cylinder 14a.
A ferrule 15 is provided which has a weld ring 15a that fits into the ferrule. Reference numeral 16 denotes a cylindrical body having a threaded portion 16a on its outer peripheral surface that is screwed into the threaded portion 12, and is detachably attached to the first electrode 11.
The structure is such that the semiconductor element 2 is held under pressure therebetween.

したがって、本発明においては、筒体16と有底筒11
aの螺合状態およびキャップ14(溶接リング15a)
と電極11 (溶接リング13a)の溶接状態を解除す
ることにより、組立済み半導体装置の第1の電極11を
再度利用することができるから、構成部品の再利用によ
る半導体装置の組立時に第1の電極11を新規製作する
必要がなくなる。
Therefore, in the present invention, the cylinder body 16 and the bottomed cylinder 11
The screwed state of a and the cap 14 (welding ring 15a)
By releasing the welded state of the electrode 11 (welding ring 13a), the first electrode 11 of the assembled semiconductor device can be reused. There is no need to newly manufacture the electrode 11.

次に、本発明における半導体装置の組立方法について説
明する。
Next, a method for assembling a semiconductor device according to the present invention will be explained.

先ず、電極11の有底筒11aの底面上に半導体素子2
を載置する。次いで、この半導体素子2上に電極4を載
置する。しかる後、この電極4のフランジ4a上に絶縁
筒62皿ばね5を順次載置し、この皿ばね5に所定の圧
力を加えた状態で各ねじ部12、16aを互い螺合する
ことにより筒体16を電極11に装着する。そして、キ
ャップ14によって有底筒11aの開口部を閉塞し、再
溶接リング13a、 15aの一部を溶接してから、管
体7から電極ll内にNZガスを封入する。
First, the semiconductor element 2 is placed on the bottom surface of the bottomed cylinder 11a of the electrode 11.
Place. Next, an electrode 4 is placed on this semiconductor element 2. Thereafter, the insulating tube 62 and the disc spring 5 are sequentially placed on the flange 4a of the electrode 4, and the screw parts 12 and 16a are screwed together while applying a predetermined pressure to the disc spring 5, thereby forming the cylinder. The body 16 is attached to the electrode 11. Then, the opening of the bottomed tube 11a is closed with the cap 14, and after welding a part of the rewelding rings 13a and 15a, NZ gas is sealed into the electrode 11 from the tube body 7.

このようにして、半導体装置を組み立てることができる
In this way, a semiconductor device can be assembled.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、その底面上に半導
体素子が載置された有底筒を有する第1の電極と、この
第1の電極に溶接され有底筒の開口部を閉塞するキャッ
プと、このキャップおよび有底筒の内部に設けられ半導
体素子にスプリングによって押圧接触する第2の電極と
、この第2の電極の周囲に設けられかつスプリングの上
方に固定されその周面にねじ部を有する筒体とを備え、
この筒体のねじ部に螺合するねじ部を有底筒の周面に設
けると共に、キャップの周面に嵌合する溶接リングを有
するフランジを設け、ごのフランジの溶接リング一部を
有底筒の周面に対向させたので、筒体と有底筒の螺合状
態およびキャップと溶接リングの溶接状態を解除するこ
とにより、組立済み半導体装置の第1の電極を再度利用
することができる。したがって、構成部品の再利用によ
る半導体装置の組立時に第1の電極を新規製作する必要
がないから、組立コストの低廉化を図ることができる。
As explained above, according to the present invention, there is provided a first electrode having a bottomed tube on which a semiconductor element is placed, and a first electrode that is welded to the first electrode to close the opening of the bottomed tube. A cap, a second electrode provided inside the cap and the bottomed cylinder and pressed into contact with the semiconductor element by a spring, and a screw provided on the circumferential surface of the second electrode provided around the second electrode and fixed above the spring. A cylindrical body having a section,
A threaded part that is screwed into the threaded part of this cylinder is provided on the circumferential surface of the bottomed cylinder, and a flange having a welding ring that fits on the circumferential surface of the cap is provided, and a part of the welded ring of the flange is attached to the bottomed cylinder. Since it is opposed to the circumferential surface of the cylinder, the first electrode of the assembled semiconductor device can be used again by releasing the screwed state between the cylinder body and the bottomed cylinder and the welded state between the cap and the welding ring. . Therefore, since there is no need to newly manufacture the first electrode when assembling the semiconductor device by reusing the component parts, the assembly cost can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係る半導体装置を示す断面図、第2図
は従来の半導体装置を示す断面図である。 2・・・・半導体素子、4・・・・第2の電極、5・・
・・皿ばね、11・・・・第1の電極、lla・・・・
有底筒、12・・・・ねじ部、13・・・・フランジ、
13a  ・・・・溶接リング、14・・・・キャップ
、14a  ・・・・筒体、15・・・・フランジ、1
5a  ・・・・溶接リング、16・・・・筒体、16
a  ・・・・ねじ部。 第1図 代 理 人 人岩増雄 tba  朴し介
FIG. 1 is a sectional view showing a semiconductor device according to the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor device. 2... Semiconductor element, 4... Second electrode, 5...
... Disc spring, 11... First electrode, lla...
Bottomed cylinder, 12... threaded part, 13... flange,
13a...Welding ring, 14...Cap, 14a...Cylinder body, 15...Flange, 1
5a...Welding ring, 16...Cylinder body, 16
a...Threaded part. Figure 1 Agent Masuo Hitoiwa TBA Shisuke Park

Claims (1)

【特許請求の範囲】[Claims] その底面上に半導体素子が載置された有底筒を有する第
1の電極と、この第1の電極に溶接され前記有底筒の開
口部を閉塞するキャップと、このキャップおよび前記有
底筒の内部に設けられ前記半導体素子にスプリングによ
って押圧接触する第2の電極と、この第2の電極の周囲
に設けられかつ前記スプリングの上方に固定されその周
面にねじ部を有する筒体とを備え、この筒体のねじ部に
螺合するねじ部を前記有底筒の周面に設けると共に、前
記キャップの周面に嵌合する溶接リングを有するフラン
ジを設け、このフランジの溶接リング一部を前記有底筒
の周面に対向させたことを特徴とする半導体装置。
a first electrode having a bottomed tube on which a semiconductor element is placed; a cap welded to the first electrode to close an opening of the bottomed tube; the cap and the bottomed tube; a second electrode provided inside the semiconductor element and pressed into contact with the semiconductor element by a spring; and a cylindrical body provided around the second electrode and fixed above the spring and having a threaded portion on its peripheral surface. A threaded portion that is screwed into the threaded portion of the cylinder is provided on the circumferential surface of the bottomed tube, and a flange having a welding ring that fits on the circumferential surface of the cap is provided, and a part of the welding ring of this flange is provided. A semiconductor device characterized in that: is opposed to the circumferential surface of the bottomed cylinder.
JP16530588A 1988-07-01 1988-07-01 Semiconductor device Pending JPH0215643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16530588A JPH0215643A (en) 1988-07-01 1988-07-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16530588A JPH0215643A (en) 1988-07-01 1988-07-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0215643A true JPH0215643A (en) 1990-01-19

Family

ID=15809809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16530588A Pending JPH0215643A (en) 1988-07-01 1988-07-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0215643A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8581422B2 (en) 2011-10-24 2013-11-12 Toyota Jidosha Kabushiki Kaisha Semiconductor module
US8659150B2 (en) 2011-09-13 2014-02-25 Toyota Jidosha Kabushiki Kaisha Semiconductor module
US8786107B2 (en) 2011-10-13 2014-07-22 Toyota Jidosha Kabushiki Kaisha Semiconductor module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8659150B2 (en) 2011-09-13 2014-02-25 Toyota Jidosha Kabushiki Kaisha Semiconductor module
US8786107B2 (en) 2011-10-13 2014-07-22 Toyota Jidosha Kabushiki Kaisha Semiconductor module
US8581422B2 (en) 2011-10-24 2013-11-12 Toyota Jidosha Kabushiki Kaisha Semiconductor module

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