JPH0215061B2 - - Google Patents

Info

Publication number
JPH0215061B2
JPH0215061B2 JP58170012A JP17001283A JPH0215061B2 JP H0215061 B2 JPH0215061 B2 JP H0215061B2 JP 58170012 A JP58170012 A JP 58170012A JP 17001283 A JP17001283 A JP 17001283A JP H0215061 B2 JPH0215061 B2 JP H0215061B2
Authority
JP
Japan
Prior art keywords
layer
atoms
photoreceptive
carbon atoms
photoconductive member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58170012A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6062165A (ja
Inventor
Keishi Saito
Yukihiko Oonuki
Shigeru Oono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP58170012A priority Critical patent/JPS6062165A/ja
Publication of JPS6062165A publication Critical patent/JPS6062165A/ja
Publication of JPH0215061B2 publication Critical patent/JPH0215061B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
JP58170012A 1983-09-14 1983-09-14 電子写真用光導電部材 Granted JPS6062165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58170012A JPS6062165A (ja) 1983-09-14 1983-09-14 電子写真用光導電部材

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58170012A JPS6062165A (ja) 1983-09-14 1983-09-14 電子写真用光導電部材

Publications (2)

Publication Number Publication Date
JPS6062165A JPS6062165A (ja) 1985-04-10
JPH0215061B2 true JPH0215061B2 (enrdf_load_stackoverflow) 1990-04-10

Family

ID=15896951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58170012A Granted JPS6062165A (ja) 1983-09-14 1983-09-14 電子写真用光導電部材

Country Status (1)

Country Link
JP (1) JPS6062165A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4737429A (en) * 1986-06-26 1988-04-12 Xerox Corporation Layered amorphous silicon imaging members
JPS63108350A (ja) * 1986-10-25 1988-05-13 Kyocera Corp 電子写真感光体
JPS63108349A (ja) * 1986-10-25 1988-05-13 Kyocera Corp 電子写真感光体
JPS63165857A (ja) * 1986-12-27 1988-07-09 Kyocera Corp 電子写真感光体

Also Published As

Publication number Publication date
JPS6062165A (ja) 1985-04-10

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