JPH02148726A - Dry etching - Google Patents
Dry etchingInfo
- Publication number
- JPH02148726A JPH02148726A JP30054488A JP30054488A JPH02148726A JP H02148726 A JPH02148726 A JP H02148726A JP 30054488 A JP30054488 A JP 30054488A JP 30054488 A JP30054488 A JP 30054488A JP H02148726 A JPH02148726 A JP H02148726A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- silicon oxide
- oxide film
- source
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 4
- 239000011737 fluorine Substances 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 abstract description 27
- 239000010409 thin film Substances 0.000 abstract description 8
- 239000007795 chemical reaction product Substances 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 6
- 239000012495 reaction gas Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、シリコン酸化膜のエツチング方法に係り、特
に基板前処理に好適な低ダメージ光励起ドライエツチン
グ方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of etching a silicon oxide film, and particularly to a low-damage photoexcited dry etching method suitable for substrate pretreatment.
従来のシリコン酸化膜の光励起エツチング法は、特開昭
６１−５３７３２号に記載のように、波長１５７〜４０
０ｎｍの光線をフッ素源又はこれと水素源との混合物に
照射して、これにシリコン酸化膜を晒すとなっていた。The conventional photo-excited etching method for silicon oxide film uses wavelengths of 157 to 40, as described in Japanese Patent Application Laid-Open No. 61-53732.
The fluorine source or a mixture of the fluorine source and the hydrogen source was irradiated with a 0 nm light beam to expose the silicon oxide film.
水素源はエツチング速度を増大させる効果を有するが、
水素源の含有量が４容量％を越えるとシリコン酸化膜表
面に薄膜の堆積が観測される。Although the hydrogen source has the effect of increasing the etching rate,
When the content of the hydrogen source exceeds 4% by volume, a thin film is observed to be deposited on the surface of the silicon oxide film.
上記従来技術は水素源の含有量４容量％以上で、薄膜堆
積の点について配慮がされておらず、清浄なエツチング
面が得られないという問題があった。In the above-mentioned conventional technology, the content of the hydrogen source was 4% by volume or more, no consideration was given to thin film deposition, and there was a problem that a clean etched surface could not be obtained.
本発明の目的は、水素源の含有量４容量％以上でも、薄
膜の堆積のないエツチングを行うことにある。An object of the present invention is to perform etching without depositing a thin film even when the content of the hydrogen source is 4% by volume or more.
上記目的は、エツチング終了時に反応ガスの供給を中止
し、シリコン酸化膜を加熱することにより、達成される
。The above object is achieved by stopping the supply of reaction gas at the end of etching and heating the silicon oxide film.
反応ガスの供給の中止により、反応生成物は発生されな
くなり、加熱することにより、残留反応ガス・残留反応
生成物がシリコン酸化膜表面から脱離し易くなり、エツ
チング終了時ひき続き系を排気することにより、残留反
応ガス、残留反応生成物が系外へ除かれるようになるの
で、シリコン酸化膜上に薄膜が堆積することがない。By discontinuing the supply of the reaction gas, no reaction products are generated, and by heating, the residual reaction gas and residual reaction products are easily desorbed from the silicon oxide film surface, and the system must be continuously evacuated when etching is completed. As a result, residual reaction gas and residual reaction products are removed from the system, so that no thin film is deposited on the silicon oxide film.
以下、本発明の実施例を図を用いて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本実施例方法に用いたドライエツチング装置を
示す概略構成図である。ＳＵＳ製チャンバ１６中には被
エツチング材１３を搭載する試料サセプタ１４、反応ガ
ス供給系１５を有し、上部に光透過用合成石英窓１２及
び光源である低圧水銀ランプ１１を具備している。又、
チャンバ下方より、バタフライバルブ１９を介し、ター
ボ分子ポンプ１７とロータリーポンプ１８にて、チャン
バ内を排気する構成である。別の光源としてエキシマレ
ーザ２０をチャンバ１６の脇に有し、光線は合成石英窓
２１を通して被エツチング材１３上に導びかれる。FIG. 1 is a schematic diagram showing a dry etching apparatus used in the method of this embodiment. The chamber 16 made of SUS has a sample susceptor 14 on which a material to be etched 13 is mounted, a reaction gas supply system 15, and is equipped with a synthetic quartz window 12 for light transmission and a low-pressure mercury lamp 11 as a light source at the top. or,
The chamber is configured to be evacuated from below by a turbo molecular pump 17 and a rotary pump 18 via a butterfly valve 19. Another light source is an excimer laser 20 beside the chamber 16, the light beam of which is directed onto the material 13 to be etched through a synthetic quartz window 21.
実施例１
シリコンを熱酸化して得たシリコン酸化膜を被エツチン
グ材１３として試料サセプタ１４に載せ、ターボ分子ポ
ンプ１７とロータリポンプ１８によりチャンバ１６内を
Ｉ Ｘ １０−’Ｔｏｒｒまで排気した。Example 1 A silicon oxide film obtained by thermally oxidizing silicon was placed on a sample susceptor 14 as the material to be etched 13, and the inside of the chamber 16 was evacuated to I.times.10-'Torr using a turbo molecular pump 17 and a rotary pump 18.
バタフライバルブ２０を閉じ、反応ガス供給系１９より
反応ガスとして三フッ化窒素を供給し、チャンバ内を９
ＱＴｏｒｒに保った。ここに反応ガス供給系１５より水
素ガスを加え、チャンバ１６内を１００Ｔｏｒｒとした
。チャンバ１６内が水素１゜％、三フッ化窒素９０％と
なるように供給ガス系１５のガス流量を調整し、チャン
バ１６内１００Ｔｏｒｒを保つように排気量をバタフラ
イバルブ１９より調節しながら、Ａｒにエキシマレーザ
２０の光を８０１（ｚで４０分合成石英窓２１より被エ
ツチング材１３に照射した。The butterfly valve 20 is closed, nitrogen trifluoride is supplied as a reaction gas from the reaction gas supply system 19, and the inside of the chamber is
I kept it at QTorr. Hydrogen gas was added here from the reaction gas supply system 15 to set the inside of the chamber 16 to 100 Torr. The gas flow rate of the supply gas system 15 was adjusted so that the inside of the chamber 16 contained 1% hydrogen and 90% nitrogen trifluoride, and the exhaust amount was adjusted using the butterfly valve 19 so as to maintain the inside of the chamber 16 at 100 Torr. Then, the material to be etched 13 was irradiated with light from an excimer laser 20 at 801 (z) for 40 minutes through the synthetic quartz window 21.
エツチング終了後、チャンバ１６より、エツチング材１
３を取り出した所、シリコン酸化膜表面に細かい水滴の
様な跡ができた。これは、反応生成物Ｓ ｉ Ｆａ が
、反応生成物ＨＦと空気中の水分が混じったものに溶解
し、付着したものと考えられる。After etching is completed, the etching material 1 is removed from the chamber 16.
When I took out No. 3, there were traces that looked like fine water droplets on the surface of the silicon oxide film. This is considered to be because the reaction product S i Fa was dissolved in a mixture of the reaction product HF and the moisture in the air and adhered thereto.
そこでエツチング終了時、反応ガスの供給を中止し、チ
ャンバ内を排気した後、排気しながらＩＲクランプータ
により１５０℃、１５分のシリコン酸化膜の加熱を行っ
た所、表面の被膜の堆積は見られず、エツチング速度は
３０ｎｍ／ｈであった。At the end of etching, the supply of reaction gas was stopped, the chamber was evacuated, and the silicon oxide film was heated at 150°C for 15 minutes using an IR clamp while the chamber was being evacuated. No film deposition was observed on the surface. First, the etching rate was 30 nm/h.
本実施例によれば、エツチング終了時の反応ガス供給の
中止、ヒータ加熱には、シリコン酸化膜上の薄膜の堆積
を阻止する効果がある。According to this embodiment, stopping the supply of reaction gas and heating the heater at the end of etching have the effect of preventing the deposition of a thin film on the silicon oxide film.
実施例２
実施例１と同様の実験であるが反応ガス中の水素含有量
を４％とし、光源を装置上部低圧水銀ランプ１１として
、エツチング時間６０分の実験を行った。エツチング終
了後、チャンバより取り出した所、被エツチング材１３
であるシリコン酸化膜上に白い膜が観測された。この膜
は、希フッ酸に溶解した為、反応生成物Ｓｉ Ｆａ と
ＮＯｘ 。Example 2 An experiment similar to Example 1 was conducted, except that the hydrogen content in the reaction gas was 4%, the low pressure mercury lamp 11 at the top of the apparatus was used as the light source, and the etching time was 60 minutes. After etching is completed, the material to be etched 13 is removed from the chamber.
A white film was observed on the silicon oxide film. Since this film was dissolved in dilute hydrofluoric acid, the reaction products were Si Fa and NOx.
ＮｚＯが混在したシリコン酸化膜系の膜であろうと考え
られる。It is thought that it is a silicon oxide film containing NzO.
そこで、エツチング終了時に反応ガスの供給を中止し、
排気しながら低圧水銀ランプ１１の照射を続け、ランプ
によるシリコン酸化膜の加熱を行った所、被膜の堆積は
見られず、この時のエツチング速度は５０ｎｍ／ｈであ
った。Therefore, the supply of reaction gas was stopped at the end of etching, and
When the silicon oxide film was heated by continuing irradiation with the low-pressure mercury lamp 11 while exhausting the air, no film deposition was observed, and the etching rate at this time was 50 nm/h.
本実施例によれば、エツチング終了時の反応ガス供給の
中止、低圧水銀ランプによる加熱には、シリコン酸化膜
上の薄膜の堆積を阻止する効果がある。According to this embodiment, stopping the supply of reaction gas and heating with a low-pressure mercury lamp at the end of etching have the effect of preventing the deposition of a thin film on the silicon oxide film.
実施例３
実施例２と同様の実験条件であるが、反応ガス中の水素
含有量を１０％とした場合も、反応ガス供給中止、ラン
プ加熱の処理により、シリコン酸化膜上の薄膜の堆積が
防止できた。この時エツチング速度は８０ｎｍ／ｈであ
った。Example 3 Although the experimental conditions were the same as in Example 2, but the hydrogen content in the reaction gas was 10%, the deposition of a thin film on the silicon oxide film was prevented by stopping the reaction gas supply and lamp heating. It could have been prevented. At this time, the etching rate was 80 nm/h.
本実施例によれば、低圧水銀ランプ加熱により反応ガス
中の水素含有量１０％においても、シリＩコン酸化膜上
に被膜の堆積なくエツチングが可能であり、これにより
水素含有量４％の場合に比し、１．７倍のエツチング速
度となった。According to this example, even when the hydrogen content in the reaction gas is 10% by heating with a low-pressure mercury lamp, etching is possible without depositing a film on the silicon I oxide film. The etching speed was 1.7 times that of the previous one.
本発明によれば、エツチング後にシリコン酸化膜上に被
膜を堆積しない為、清浄なエツチング面を有するドライ
エツチング技術が提供できる。加えて、水素濃度の薄膜
堆積のしきい値が失くなるので、反応ガス中の水素濃度
増加が可能となり。According to the present invention, since no film is deposited on the silicon oxide film after etching, it is possible to provide a dry etching technique with a clean etching surface. In addition, since the hydrogen concentration threshold for thin film deposition is lost, it becomes possible to increase the hydrogen concentration in the reactant gas.
エツチング速度向上の効果がある。It has the effect of improving etching speed.
第１図は本発明の実施例で用いたドライエツチング装置
を示す概略構成図である。FIG. 1 is a schematic diagram showing a dry etching apparatus used in an embodiment of the present invention.
Claims (1)
との混合物に照射して、これをシリコン酸化膜に接触さ
せるシリコン酸化膜のエッチング方法においてエッチン
グ終了時にガス供給を中止し、シリコン酸化膜を加熱す
ることを特徴とするドライエッチング方法。 ２、加熱方法が熱源によることを特徴とする特許請求の
範囲第１項記載のエッチング方法。 ３、加熱方法が低圧水銀ランプ、エキシマレーザＸｅ−
Ｈｇランプの光源によることを特徴とする特許請求の範
囲第１項記載のエッチング方法。[Claims] 1. In a silicon oxide film etching method in which a mixture of a fluorine source and a hydrogen source is irradiated with a light beam with a wavelength of 157 to 400 nm and brought into contact with a silicon oxide film, the gas supply is stopped at the end of etching. A dry etching method characterized by heating the silicon oxide film. 2. The etching method according to claim 1, wherein the heating method uses a heat source. 3. Heating method is low pressure mercury lamp, excimer laser Xe-
2. The etching method according to claim 1, wherein the etching method uses an Hg lamp as a light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30054488A JPH02148726A (en) | 1988-11-30 | 1988-11-30 | Dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30054488A JPH02148726A (en) | 1988-11-30 | 1988-11-30 | Dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02148726A true JPH02148726A (en) | 1990-06-07 |
Family
ID=17886106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30054488A Pending JPH02148726A (en) | 1988-11-30 | 1988-11-30 | Dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02148726A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4926188B2 (en) * | 2006-02-22 | 2012-05-09 | アウディー アーゲー | How to machine a press tool using marking paint |
-
1988
- 1988-11-30 JP JP30054488A patent/JPH02148726A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4926188B2 (en) * | 2006-02-22 | 2012-05-09 | アウディー アーゲー | How to machine a press tool using marking paint |
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