JPH0214427B2 - - Google Patents
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- Publication number
- JPH0214427B2 JPH0214427B2 JP18822286A JP18822286A JPH0214427B2 JP H0214427 B2 JPH0214427 B2 JP H0214427B2 JP 18822286 A JP18822286 A JP 18822286A JP 18822286 A JP18822286 A JP 18822286A JP H0214427 B2 JPH0214427 B2 JP H0214427B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- gas
- sputtering
- particles
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 13
- 230000007246 mechanism Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 33
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000011882 ultra-fine particle Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- -1 argon ions Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、金属、半導体、絶縁体等の各種膜の
形成に利用される輸送型スパツタリング成膜法に
関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a transport sputtering film forming method used for forming various films such as metals, semiconductors, and insulators.
（従来の技術）
従来、基板上に各種物質をスパツタして膜を形
成するスパツタリング法には、原理上２つの方
式、すなわちプラズマスパツタリング法とイオン
ビームスパツタリング法が考えられている。さら
に、これらのスパツタリング法は電子の封じ込め
方法や電極の形状等によつて種々のスパツタリン
グ装置に区分されている。そして、これらのスパ
ツタリング装置では雰囲気ガスの圧力が102Pa
（パスカル）程度以下の雰囲気中でスパツタリン
グ及び膜形成が行われている。(Prior Art) Conventionally, two methods have been considered in principle for the sputtering method for forming a film by sputtering various substances onto a substrate, namely, the plasma sputtering method and the ion beam sputtering method. Furthermore, these sputtering methods are classified into various sputtering apparatuses depending on the method of confining electrons, the shape of the electrodes, and the like. In these sputtering devices, the atmospheric gas pressure is 10 2 Pa.
Sputtering and film formation are performed in an atmosphere of (Pascal) or less.
（発明が解決しようとする問題点）
従来のスパツタリング装置では、陰極からスパ
ツタされた原子であるスパツタ粒子は、雰囲気ガ
ス中を散乱過程あるいは拡散過程を経て飛来し、
これらの過程に支配されて膜形成がなされる。こ
のため、102Pa程度以上の高圧力下ではスパツタ
リング成膜ができない。また、102Pa程度以下の
雰囲気中で膜形成を行うので、スパツタ粒子の平
均自由行程が長くなるので、高エネルギーのイオ
ン電子、また中性原子が基板面上に入射するの
で、形成された膜に損傷を与える場合がある。さ
らに、スパツタ粒子も平均自由行程が長いために
真空槽内で広い範囲にわたりスパツタ粒子が飛ぶ
ので、基板上への材料の回収率を高くすることが
難しいという問題がある。さらに、近時ガスセン
サや磁気メモリ媒体等に用いられる各種超微粒子
を生成するためには、従来のスパツタリング法を
利用することができない場合が多い。(Problems to be Solved by the Invention) In conventional sputtering equipment, sputter particles, which are atoms sputtered from a cathode, fly through an atmospheric gas through a scattering process or a diffusion process.
Film formation is controlled by these processes. For this reason, sputtering film formation cannot be performed under high pressures of about 10 2 Pa or higher. In addition, since the film is formed in an atmosphere of about 10 2 Pa or less, the mean free path of the sputtered particles becomes long, so high-energy ions, electrons, and neutral atoms are incident on the substrate surface. May damage the membrane. Furthermore, since the spatter particles also have a long mean free path, they fly over a wide range within the vacuum chamber, making it difficult to increase the recovery rate of the material onto the substrate. Furthermore, in order to generate various ultrafine particles used in recent gas sensors, magnetic memory media, etc., conventional sputtering methods cannot often be used.
（問題点を解決するための手段）
本発明に係るスパツタリング成膜法は、中空形
状になされた陽極内に、同じく中空形状になされ
たスパツタすべき原子からなる陰極を内挿して放
電機構を構成し、該陰極の一端側から他端側に設
けた基板へ雰囲気ガスを導入し、陰極内部で生成
されたスパツタ粒子を前記雰囲気ガスの流れによ
り基板側へ輸送する方法である。(Means for Solving the Problems) The sputtering film forming method according to the present invention constructs a discharge mechanism by inserting a hollow cathode made of atoms to be sputtered into a hollow anode. In this method, an atmospheric gas is introduced from one end of the cathode to a substrate provided at the other end, and spatter particles generated inside the cathode are transported to the substrate by the flow of the atmospheric gas.
（作用）
陽極と陰極間は、例えば２重構造になされてお
り、これらの間に電圧が印加され放電が行われ
る。この陰極内に雰囲気ガス（例えばArガス）
を導入すると、イオン化されたガス成分が電界に
加速されて陰極に衝突しスパツタ原子をはじき出
す。かかる状態において、雰囲気ガスの流れに沿
つて陰極からスパツタされたスパツタ粒子が輸送
され、基板上に堆積される。(Function) The anode and cathode have, for example, a double structure, and a voltage is applied between them to cause discharge. There is an atmospheric gas (e.g. Ar gas) inside this cathode.
When introduced, ionized gas components are accelerated by the electric field and collide with the cathode, kicking out spatter atoms. In this state, sputtered particles sputtered from the cathode are transported along the flow of atmospheric gas and deposited on the substrate.
（実施例）
以下、本発明の実施例について図面を参照して
説明する。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は、本発明に係る輸送型スパツタリング
成膜法に供されるスパツタリング装置の実施例を
示す概略図である。 FIG. 1 is a schematic diagram showing an embodiment of a sputtering apparatus used in the transport type sputtering film forming method according to the present invention.
真空槽１は２つの排気系を有するとともに、雰
囲気ガス（本例ではArガス）の導入系を有して
いる。排気系としては、本例では高真空用の予備
排気系としてバルブ２の開閉によつて真空槽１内
を排気するオイル拡散ポンプ３と、バルブ４の開
閉によつて排気する低真空用の大容量排気系であ
る油回転ポンプ５が設けられている。 The vacuum chamber 1 has two exhaust systems as well as an introduction system for atmospheric gas (Ar gas in this example). In this example, the evacuation system includes an oil diffusion pump 3 as a preliminary evacuation system for high vacuum, which evacuates the inside of the vacuum chamber 1 by opening and closing valve 2, and a large pump for low vacuum, which evacuates the inside of vacuum chamber 1 by opening and closing valve 4. An oil rotary pump 5, which is a capacity exhaust system, is provided.
スパツタすべき金属原子からなる陰極６は、円
筒形になされている。この陰極６は、同じく円筒
形になされた陽極７と絶縁体（例えばアルミナ
等）８を介して一定間隔を保持して内挿されてい
る。なお、陰極６及び陽極７の形状は本例の如く
円筒形の場合に限らず中空形状であればよい。直
流電源９は陰極６と陽極７間で放電を起こすため
の電源で、陰極６側を負電位とし、陽極７を接地
電位とする電圧が印加されている。一方、Arガ
スの導入系は陰極６の一端側（本例では上端側）
に設けたニードルバルブ１０の開閉によつて導入
されるようになされている。陰極６の他端側（本
例では下端側）には、所定間隔をおいて、膜を堆
積すべき基板１１が基板ホルダ１２上に載置され
て設けられている。陰極６と基板１１との間に
は、シヤツター１４が設けられており、このシヤ
ツター１４の開閉によつて膜堆積の開始タイミン
グ及び堆積量の調整がなされる。さらに、真空槽
１内の圧力を確認するための真空計１５及び導入
ガスの圧力を計測するための圧力計１６がそれぞ
れ設けられている。 The cathode 6 consisting of metal atoms to be sputtered is cylindrical. This cathode 6 is interposed with an anode 7, which is also cylindrical, and an insulator (eg, alumina) 8 interposed therebetween at a constant distance. Note that the shape of the cathode 6 and the anode 7 is not limited to the cylindrical shape as in this example, but may be any hollow shape. The DC power supply 9 is a power supply for causing a discharge between the cathode 6 and the anode 7, and a voltage is applied that sets the cathode 6 side at a negative potential and the anode 7 at a ground potential. On the other hand, the Ar gas introduction system is on one end side of the cathode 6 (in this example, the upper end side)
It is designed to be introduced by opening and closing a needle valve 10 provided in the. On the other end side (lower end side in this example) of the cathode 6, a substrate 11 on which a film is to be deposited is placed on a substrate holder 12 at a predetermined interval. A shutter 14 is provided between the cathode 6 and the substrate 11, and opening and closing of the shutter 14 adjusts the timing of starting film deposition and the amount of deposition. Furthermore, a vacuum gauge 15 for checking the pressure inside the vacuum chamber 1 and a pressure gauge 16 for measuring the pressure of the introduced gas are provided, respectively.
第２図は、前記陰極６の形状を詳細に示す断面
図である。 FIG. 2 is a sectional view showing the shape of the cathode 6 in detail.
本例の陰極６は軸方向に沿つて向い合せに小孔
１７が複数個穿設されている。この小孔１７は、
陰極６内のプラズマ電位を陰極６の軸方向にわた
つて一定の値に保ち、均一なスパツタ侵食を行わ
せる働きをする。すなわち、陰極６と陽極７間の
放電によつて生成された電子がある一定の割合で
この小孔１７を通して陽極７側に流れ込むことに
より、陰極６内の放電が維持されるのである。 In the cathode 6 of this example, a plurality of small holes 17 are formed facing each other along the axial direction. This small hole 17 is
It serves to maintain the plasma potential within the cathode 6 at a constant value across the axial direction of the cathode 6 and to perform uniform spatter erosion. That is, the electrons generated by the discharge between the cathode 6 and the anode 7 flow into the anode 7 side through the small holes 17 at a certain rate, thereby maintaining the discharge within the cathode 6.
前記雰囲気ガスであるArガスには高純度なガ
スを使用し、一定の流量で導入し、陰極６と陽極
７との間で放電を発生させ持続させる作用を果た
すとともに、イオン化されたArガスが陰極６の
内面に衝突し、陰極原子をスパツタさせ、さらに
このスパツタされた粒子を基板１１側に輸送する
働きを有する。 A high-purity Ar gas is used as the atmospheric gas, and it is introduced at a constant flow rate to generate and sustain a discharge between the cathode 6 and anode 7, and the ionized Ar gas It collides with the inner surface of the cathode 6, sputters cathode atoms, and has the function of transporting the sputtered particles to the substrate 11 side.
陰極６と陽極７との放電が開始することにより
発生するプラズマは、陰極６の内周面側と外周面
側の双方の領域に存在するが、陰極６の内周面側
ではγ電子の閉じ込め作用により、外周面側に比
べてバルブ密度が高くなる。この結果、陰極６に
入射する正イオン（アルゴンイオン）の量は、陰
極６の内周面側の方が多くなり、スパツタ侵食も
内周面側の方が多くなる。つまり、陰極６の内周
面がおもにスパツタされることになり、このスパ
ツタされた粒子がArガスの流れに乗つて基板１
１上に輸送されることになる。 Plasma generated by the start of discharge between the cathode 6 and the anode 7 exists on both the inner and outer peripheral surfaces of the cathode 6, but on the inner peripheral surface of the cathode 6, γ electrons are confined. Due to this action, the bulb density becomes higher than that on the outer peripheral surface side. As a result, the amount of positive ions (argon ions) incident on the cathode 6 is greater on the inner peripheral surface side of the cathode 6, and spatter erosion is also greater on the inner peripheral surface side. In other words, the inner circumferential surface of the cathode 6 is mainly sputtered, and the sputtered particles ride the flow of Ar gas to the substrate 1.
1 will be transported.
前記陰極６と陽極７との放電を維持するための
圧力は、陰極６と陽極７間の距離に関係するが、
本例のスパツタリング装置では、陰極径に比べ陰
極長を長くしており、スパツタ粒子の平均自由行
程がこの長さに比べて十分小さくなるようにAr
ガスの圧力を決定しているので、スパツタ粒子は
陰極６から外へ流出することがほとんどない。そ
こで、この陰極６内に高速でArガスを導入する
ことにより、その流れにスパツタ粒子をのせて外
部へ放出させている。 The pressure for maintaining the discharge between the cathode 6 and the anode 7 is related to the distance between the cathode 6 and the anode 7,
In the sputtering device of this example, the cathode length is longer than the cathode diameter, and Ar
Since the gas pressure is determined, almost no spatter particles flow out from the cathode 6. Therefore, by introducing Ar gas into the cathode 6 at high speed, spatter particles are carried by the flow and released to the outside.
陰極６内に導入されるArガスの流れは、スパ
ツタ粒子を外部へ押し出すためにいわゆる粘性流
の働きをすることが好ましい。このために例えば
陰極６内の圧力が300Pa以上とすると、その時の
平均自由行程は10-2cm程度以下となるので、例え
ば陰極内径を数mmとすればよい。そしてこの時、
真空槽１内のArガスの圧力は、陰極６内の圧力
より１桁程度低い値になつている。すなわち、
Arガスは粘性流となつて、陰極６内を通過し、
圧力の十分低い領域へ噴出している状態になつて
いる。 It is preferable that the flow of Ar gas introduced into the cathode 6 acts as a so-called viscous flow in order to push spatter particles to the outside. For this purpose, for example, if the pressure inside the cathode 6 is 300 Pa or more, the mean free path at that time will be about 10 -2 cm or less, so the inner diameter of the cathode may be set to several mm, for example. And at this time,
The pressure of Ar gas in the vacuum chamber 1 is about one digit lower than the pressure in the cathode 6. That is,
Ar gas becomes a viscous flow and passes through the cathode 6,
It is now in a state where it is ejecting into an area where the pressure is sufficiently low.
上記構成からなるスパツタリング装置におい
て、基板１１上に膜を堆積するためには、まず真
空槽１内を前記オイル拡散ポンプ３の作動によつ
て十分排気して、不純物の影響を少なくした後に
前記ニードルバルブ１０を開き、高純度のArガ
スを導入するとともに、前記油回転ポンプ５を作
動させ大容量の排気を行い、Arガスの流れを設
定する。次に、前記直流電源９を印加し、陰極６
を負電位とする放電を開始し、前記Arガスのイ
オン化とともに、陰極６にアルゴンイオンを衝突
させ、スパツタを開始する。そして、同じくAr
ガスの流れにより、このスパツタ粒子を下方へ輸
送させる。そして、この輸送状態が定常状態にな
つたのを一定時間後確認すると、前記シヤツター
１４を開いて基板１１上に膜を形成する。 In the sputtering apparatus having the above configuration, in order to deposit a film on the substrate 11, the inside of the vacuum chamber 1 is first sufficiently evacuated by operating the oil diffusion pump 3 to reduce the influence of impurities, and then the needle The valve 10 is opened to introduce high-purity Ar gas, and the oil rotary pump 5 is operated to exhaust a large amount of air to set the flow of the Ar gas. Next, the DC power source 9 is applied, and the cathode 6
A discharge with a negative potential is started, and as the Ar gas is ionized, argon ions collide with the cathode 6 to start sputtering. And also Ar
The gas flow transports the spatter particles downward. When it is confirmed that the transportation state has reached a steady state after a certain period of time, the shutter 14 is opened to form a film on the substrate 11.
次に、上述したスパツタリング装置における実
験例をグラフを参照して説明する。 Next, an experimental example using the above-mentioned sputtering apparatus will be explained with reference to graphs.
第３図ないし第５図に示すグラフを参照して説
明する。なお、以下に示す実験では、陰極の材料
を銅（Cu）によつて作成し、陰極内径を８mm、
陽極内径を20mm、小孔１７のピツチ間隔を10mm、
小孔１７の内径を５mmに設定している。 This will be explained with reference to the graphs shown in FIGS. 3 to 5. In the experiment shown below, the cathode material was made of copper (Cu), and the inner diameter of the cathode was 8 mm.
The inner diameter of the anode is 20 mm, the pitch interval of small holes 17 is 10 mm,
The inner diameter of the small hole 17 is set to 5 mm.
第３図は、前記直流電源９の印加電圧とこの電
圧による放電電流の関係を示すグラフであり、こ
のグラフによれば、印加電圧が350ボルト以下の
比較的低電圧で大きな放電電流が得られており、
この時に陰極６内に高いイオン化が行われている
のが理解される。 FIG. 3 is a graph showing the relationship between the applied voltage of the DC power supply 9 and the discharge current due to this voltage. According to this graph, a large discharge current can be obtained with a relatively low applied voltage of 350 volts or less. and
It is understood that high ionization occurs within the cathode 6 at this time.
なお、第３図ではガス導入口のアルゴン圧力を
540Paとし、真空槽１内の圧力を20Paとしてお
り、グラフ２０，２１，２２は陰極６の全長ｌ
（第２図参照）をそれぞれ100mm、150mm、300mmに
変更した場合の特性を示している。 In addition, in Figure 3, the argon pressure at the gas inlet is
540Pa, and the pressure inside the vacuum chamber 1 is 20Pa, and graphs 20, 21, and 22 show the total length l of the cathode 6.
(See Figure 2) is changed to 100mm, 150mm, and 300mm, respectively.
第４図は、入力電力（印加電圧×放電電流）に
対するスパツタ膜の堆積速度（Depositi on
rate、単位Å／min）を示しており、このグラフ
はガス導入口のArガス圧力を540Paとし、陰極６
と基板１１間の距離を１cmとした場合であり、グ
ラフ２３，２４，２５はそれぞれ前記陰極６の全
長ｌが150mm、100mm、300mmの場合を示している。
同図によれば、比較的低入力電力でも高速でスパ
ツタ膜の形成が確認された。 Figure 4 shows the deposition rate of the sputtered film relative to the input power (applied voltage x discharge current).
This graph shows the Ar gas pressure at the gas inlet port being 540Pa, and the cathode 6
Graphs 23, 24, and 25 show cases where the total length l of the cathode 6 is 150 mm, 100 mm, and 300 mm, respectively.
According to the figure, it was confirmed that spatter films were formed at high speed even with relatively low input power.
第５図は、スパツタ膜の堆積速度のArガス圧
力の依存性を示すグラフである。 FIG. 5 is a graph showing the dependence of the sputtered film deposition rate on the Ar gas pressure.
陰極６と基板１１の距離を１cmとし、グラフ２
６はｌ＝100mm、入力電力55w、グラフ２７はｌ
＝300、入力電力160w、グラフ２８はｌ＝150mm、
入力電力80wの場合をそれぞれ示している。ま
た、これらの３つの特性と同じ条件でArの流れ
がない場合におけるスパツタ膜の堆積速度はそれ
ぞれ零に近いので、Arガスの流れが本例におけ
る膜形成に重要な条件となつているのがわかる。 The distance between the cathode 6 and the substrate 11 is 1 cm, and graph 2
6 is l=100mm, input power is 55w, graph 27 is l
= 300, input power 160w, graph 28 is l = 150mm,
Each figure shows the case where the input power is 80W. Furthermore, under the same conditions as these three characteristics, the deposition rate of the sputtered film in the absence of Ar flow is close to zero, so the flow of Ar gas is an important condition for film formation in this example. Recognize.
なお、上述した実験例では陰極６をCuによつ
て作成し、Cu膜を生成する場合を例示したが、
この他にFe膜、Ni膜や他の物質についても同様
にスパツタ膜を生成することができる。また、上
述した実施例では陰極６と陽極７とを２重筒構造
に構成しているので、スパツタ粒子は陰極６の下
方だけに輸送され、一定範囲に限つて膜堆積を行
うことができる。 In addition, in the above-mentioned experimental example, the case where the cathode 6 is made of Cu and a Cu film is generated is illustrated.
In addition, sputtered films can be similarly produced using Fe films, Ni films, and other materials. Further, in the above-described embodiment, the cathode 6 and the anode 7 are configured in a double cylinder structure, so that the spatter particles are transported only below the cathode 6, and film deposition can be performed only in a certain range.
また、上述した実験例の他に本例の輸送型スパ
ツタリング成膜法を用いることで超微粒子が生成
されるのを確認した。すなわち、放電に要する入
力電力を増した場合に生成される膜を電子顕微鏡
で観察すると、この粒径が数10Åの超微粒子が生
成されていた。これは、スパツタ粒子がArガス
に輸送されている間に相互に合体して、超微粒子
が生成されたと考えられる。よつて、本例のスパ
ツタリング装置のスパツタ条件をコントロールす
れば、スパツタ粒子が相互に合体して超微粒子が
生成される条件と、合体せずに原子上で基板１１
まで到達する条件とを適宜変更することができる
ので、超微粒子と通常のスパツタ粒子の生成切換
を容易に行うことができる。 In addition to the experimental examples described above, it was also confirmed that ultrafine particles were produced by using the transport sputtering film forming method of this example. That is, when the film produced when the input power required for discharge was increased was observed using an electron microscope, it was found that ultrafine particles with a particle size of several tens of angstroms were produced. This is considered to be because the spatter particles coalesced with each other while being transported by Ar gas, and ultrafine particles were generated. Therefore, by controlling the sputtering conditions of the sputtering apparatus of this example, it is possible to create conditions where the sputtered particles coalesce with each other to produce ultrafine particles, and conditions where the sputtered particles do not coalesce and form ultrafine particles on the substrate 11.
Since the conditions for reaching this point can be changed as appropriate, it is possible to easily switch between the production of ultrafine particles and normal sputter particles.
（発明の効果）
以上述べたように、本発明によれば、従来より
も高圧力下で高速スパツタ膜の作成ができる。こ
のため、原子イオン等の平均自由行程が短い状態
でスパツタを行うことができるので、成長膜面に
高エネルギー粒子が入射せず、膜の損傷が防止さ
れる。また、このとき平均自由行程が短いので、
スパツタ粒子は基板に対し２次元的な広がりをも
つて入射して、いわゆるステツプカバレツジがよ
い。さらに、スパツタ粒子は雰囲気ガスの流れで
輸送されるので、膜の堆積場所を任意にコントロ
ールできる。また、陽極と陰極間に入力する電力
を制御することで、超微粒子の生成も可能となつ
た。(Effects of the Invention) As described above, according to the present invention, a sputtered film can be formed at high speed under a higher pressure than before. Therefore, since sputtering can be performed in a state where the mean free path of atomic ions or the like is short, high-energy particles do not enter the surface of the grown film, and damage to the film is prevented. Also, since the mean free path is short at this time,
The sputter particles are incident on the substrate with a two-dimensional spread, resulting in good so-called step coverage. Furthermore, since the spatter particles are transported by the flow of atmospheric gas, the location where the film is deposited can be controlled as desired. Furthermore, by controlling the power input between the anode and cathode, it has become possible to generate ultrafine particles.
第１図は本発明に係る輸送型スパツタリング成
膜法に供されるスパツタリング装置の全体構成を
示すブロツク図、第２図は陽極と陰極の形状を詳
細に示す断面図、第３図ないし第５図は実験例を
示すグラフであり、第３図は印加電圧と放電電流
の関係を例示するグラフ、第４図は入力電力とス
パツタ膜の堆積速度の関係を例示するグラフ、第
５図はガス導入口のAr圧力とスパツタ膜の堆積
速度の関係を例示するグラフである。
１…真空槽、３…オイル拡散ポンプ、５…油回
転ポンプ、６…陰極、７…陽極、１１…基板、１
７…小孔。
FIG. 1 is a block diagram showing the overall configuration of a sputtering apparatus used in the transport type sputtering film forming method according to the present invention, FIG. 2 is a sectional view showing details of the shapes of an anode and a cathode, and FIGS. 3 to 5 The figures are graphs showing experimental examples, Fig. 3 is a graph illustrating the relationship between applied voltage and discharge current, Fig. 4 is a graph illustrating the relationship between input power and sputtering film deposition rate, and Fig. 5 is a graph illustrating the relationship between applied voltage and discharge current. 3 is a graph illustrating the relationship between the Ar pressure at the inlet and the deposition rate of a sputtered film. 1... Vacuum chamber, 3... Oil diffusion pump, 5... Oil rotary pump, 6... Cathode, 7... Anode, 11... Substrate, 1
7...Small hole.
Claims (1)
状になされたスパツタすべき原子からなる陰極を
内挿して放電機構を構成し、該陰極の一端側から
他端側に設けた基板へ雰囲気ガスを導入し、陰極
内部で生成されたスパツタ粒子を前記雰囲気ガス
の流れにより基板側へ輸送することを特徴とする
輸送型スパツタリング成膜法。1 A discharge mechanism is constructed by inserting a hollow cathode made of atoms to be sputtered into a hollow anode, and an atmospheric gas is introduced from one end of the cathode to a substrate provided at the other end. A transport type sputtering film forming method characterized in that the sputter particles generated inside the cathode are transported to the substrate side by the flow of the atmospheric gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18822286A JPS6345367A (en) | 1986-08-11 | 1986-08-11 | Film formation by transporting type sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18822286A JPS6345367A (en) | 1986-08-11 | 1986-08-11 | Film formation by transporting type sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6345367A JPS6345367A (en) | 1988-02-26 |
| JPH0214427B2 true JPH0214427B2 (en) | 1990-04-09 |
Family
ID=16219908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18822286A Granted JPS6345367A (en) | 1986-08-11 | 1986-08-11 | Film formation by transporting type sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6345367A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0399833U (en) * | 1990-01-31 | 1991-10-18 | ||
| JP2007138293A (en) | 2005-11-14 | 2007-06-07 | Sulzer Metco Coatings Bv | Method for coating of base body and also workpiece |
| WO2022009536A1 (en) * | 2020-07-07 | 2022-01-13 | ソニーグループ株式会社 | Sputtering apparatus and sputtering film forming method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009037853B3 (en) | 2009-08-18 | 2011-03-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gas flow sputtering source |
| SE535381C2 (en) * | 2010-02-24 | 2012-07-17 | Plasmadvance Ab | Plasma sputtering process to produce particles |
| CN103751305B (en) * | 2013-12-11 | 2016-03-30 | 内蒙古元和药业股份有限公司 | A kind of medicine for the treatment of rheumatoid arthritis and preparation method thereof |
-
1986
- 1986-08-11 JP JP18822286A patent/JPS6345367A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0399833U (en) * | 1990-01-31 | 1991-10-18 | ||
| JP2007138293A (en) | 2005-11-14 | 2007-06-07 | Sulzer Metco Coatings Bv | Method for coating of base body and also workpiece |
| WO2022009536A1 (en) * | 2020-07-07 | 2022-01-13 | ソニーグループ株式会社 | Sputtering apparatus and sputtering film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6345367A (en) | 1988-02-26 |
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