JPH02140986A - Optical output controller for semiconductor laser - Google Patents

Optical output controller for semiconductor laser

Info

Publication number
JPH02140986A
JPH02140986A JP29499388A JP29499388A JPH02140986A JP H02140986 A JPH02140986 A JP H02140986A JP 29499388 A JP29499388 A JP 29499388A JP 29499388 A JP29499388 A JP 29499388A JP H02140986 A JPH02140986 A JP H02140986A
Authority
JP
Japan
Prior art keywords
pulse
semiconductor laser
optical output
current
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29499388A
Other languages
Japanese (ja)
Inventor
Yuichi Inoue
祐一 井上
Koji Morishita
森下 耕次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP29499388A priority Critical patent/JPH02140986A/en
Publication of JPH02140986A publication Critical patent/JPH02140986A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06835Stabilising during pulse modulation or generation

Abstract

PURPOSE:To suppress current consumption in a driving circuit by generating a first pulse for applying a bias current and a second pulse for monitoring the optical output of a semiconductor laser, and superposing a driving current pulse on the first pulse to driving the laser. CONSTITUTION:When a semiconductor laser 1 is driven, its optical output is detected by a photodetector 2, and a level detector 9 detects the level of the photodetection signal at a position of generating timing of a second pulse P2. A comparison controller 11 increases or decreases the amplitudes of first and second pulses P1, P2 on the basis of difference between the detected value and a reference value to control to negatively feed back so that the optical output of the laser 1 becomes constant. In this case, a bias current is applied by the pulse P1 to the pulse-modulated driving current pulse. Thus, current consumption of the driving circuit can be suppressed to a small value.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 この発明は、半導体レーザの光出力を制御するのに用い
られる半導体レーザの光出力制御装置に関する。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a semiconductor laser light output control device used to control the light output of a semiconductor laser.

〈従来の技術〉 従来、半導体レーザの駆動回路には、第4図に示す如く
、パルス変調された駆動電流パルスP0とバイアス電流
Ibとが入力され、これら入力を重畳した信号で半導体
レーザを駆動して光出力パルスP。utを出力させる。
<Prior Art> Conventionally, as shown in FIG. 4, a pulse-modulated drive current pulse P0 and a bias current Ib are input to a semiconductor laser drive circuit, and the semiconductor laser is driven by a signal obtained by superimposing these inputs. and optical output pulse P. Output ut.

前記の直流バイアス電流1bは半導体レーザの発振開始
電流■い以上の値に設定されるが、この発振開始電流t
thは温度変化により変動して、その特性も図中、鎖線
a、bで示すように変位し、前記光出力パルスもP O
IJ? ’ +  P 0117′のようになる。
The DC bias current 1b is set to a value greater than or equal to the oscillation starting current t of the semiconductor laser.
th changes due to temperature changes, and its characteristics also change as shown by chain lines a and b in the figure, and the optical output pulse also changes as P O
IJ? ' + P 0117'.

そこで半導体レーザの光出力をモニタ用のフォトダイオ
ードで受光し、その受光パルスのピーク値や平均値を検
出した後、その検出値と基準値との差に応じて直流バイ
アス電流1bを増減し、これにより一定の光出力となる
よう負帰還制御している。
Therefore, the optical output of the semiconductor laser is received by a monitoring photodiode, and after detecting the peak value and average value of the received light pulse, the DC bias current 1b is increased or decreased according to the difference between the detected value and the reference value. This performs negative feedback control to maintain a constant optical output.

〈発明が解決しようとする問題点〉 しかしながらこのような方式では、駆動回路へ直流バイ
アス電流I、を常時流す必要があるため、駆動回路の消
費電流が太き(なるという問題がある。
<Problems to be Solved by the Invention> However, in such a system, since it is necessary to constantly flow the DC bias current I to the drive circuit, there is a problem that the current consumption of the drive circuit becomes large.

この発明は、上記問題に着目してなされたもので、駆動
回路部に対しバイアス電流を必要に応じてパルス的に与
えることにより、消費電流を小さく抑えた新規な半導体
レーザの光出力制御装置を提供することを目的とする。
This invention was made with attention to the above problem, and provides a novel semiconductor laser optical output control device that suppresses current consumption by applying a bias current to the drive circuit section in pulses as needed. The purpose is to provide.

く問題点を解決するための手段〉 この発明の光出力制御装置は、半導体レーザと、パルス
変調された駆動電流パルスを、直流バイアス電流を与え
るための第1のパルスに重畳した信号で半導体レーザを
駆動するための駆動回路部と、半導体レーザの光出力を
検出するための光検出部と、前記第1のパルスを駆動電
流パルスと同じタイミングで生成すると共に、その中間
のタイミングで第2のパルスを生成するためのパルス生
成回路部とで構成される。
Means for Solving the Problems> The optical output control device of the present invention uses a semiconductor laser and a signal obtained by superimposing a pulse-modulated drive current pulse on a first pulse for providing a DC bias current to control the semiconductor laser. a drive circuit section for driving the semiconductor laser; a photodetection section for detecting the optical output of the semiconductor laser; It consists of a pulse generation circuit section for generating pulses.

そしてパルス生成回路部には、光検出器で得た受光信号
のレベルを前記第2のパルスの発生タイミングの位置で
検出するためのレベル検出回路部と、レベル検出回路部
による検出値と基準値との差に応じて第1.第2の各パ
ルスの振幅を制御する比較制御回路部とを具備させてい
る。
The pulse generation circuit section includes a level detection circuit section for detecting the level of the light reception signal obtained by the photodetector at the position of the second pulse generation timing, and a detection value and a reference value by the level detection circuit section. 1st according to the difference between The comparison control circuit section controls the amplitude of each second pulse.

〈作用〉 半導体レーザが駆動されると、その光出力は光検出部で
受光されると共に、レベル検出回路部がその受光信号の
レベルを第2のパルスの発生タイミングの位置で検出す
る。比較制御回路部はこの検出値と基準値との差に基づ
き第1゜第2の各パルスの振幅を増減し、これにより半
導体レーザの光出力が一定となるよう負帰還制御する。
<Operation> When the semiconductor laser is driven, its optical output is received by the photodetector, and the level detection circuit detects the level of the received light signal at the position of the second pulse generation timing. The comparison control circuit section increases or decreases the amplitude of each of the first and second pulses based on the difference between the detected value and the reference value, thereby performing negative feedback control so that the optical output of the semiconductor laser becomes constant.

この場合にパルス変調された駆動電流パルスに対し、第
1のパルスによりバイアス電流が与えられるので、直流
バイアス電流を常時流す方式の従来例と比較して、駆動
回路部の消費電流が小さく抑えられる。
In this case, the bias current is applied by the first pulse to the pulse-modulated drive current pulse, so the current consumption of the drive circuit section can be kept low compared to the conventional method in which a direct current bias current is constantly flowing. .

〈実施例〉 第1図は、この発明の一実施例にかかる半導体レーザの
光出力制御装置の全体構成を示すもので、半導体レーザ
1と、半導体レーザ1の出力光りを検出するモニタ用の
フォトダイオード2と、バイアス電流を与える第1のパ
ルスP。
Embodiment FIG. 1 shows the overall configuration of a semiconductor laser optical output control device according to an embodiment of the present invention. diode 2 and a first pulse P providing a bias current.

に駆動電流パルスPflを重畳した信号で半導体レーザ
1を駆動するレーザ駆動回路3と、前記駆動電流パルス
Poを生成してレーザ駆動回路3へ出力する駆動電流制
御部4と、前記第1のパルスP1を生成すると共に、第
1のパルスP1の発生タイミングの中間のタイミングで
第2のパルスP、を生成してこれらパルスP1゜P2を
レーザ駆動回路3へ出力するバイアス電流制御部5とか
ら構成されている。
a laser drive circuit 3 that drives the semiconductor laser 1 with a signal obtained by superimposing a drive current pulse Pfl on the drive current pulse Pfl; a drive current control unit 4 that generates the drive current pulse Po and outputs it to the laser drive circuit 3; The bias current controller 5 generates a pulse P1 and a second pulse P at an intermediate timing of the generation timing of the first pulse P1, and outputs these pulses P1 and P2 to the laser drive circuit 3. has been done.

第2図は、半導体レーザ1の出力特性であって、この半
導体レーザ1を第1のパルスP+に駆動電流パルスP、
を重畳した信号と、第2のパルスPtとで駆動するもの
である。第1.第2の各パルスP+、Pgの振幅は半導
体レーザの発振開始電流Iい以上に設定され、前記の重
畳信号と第2のパルスP2とで半導体レーザ1が駆動さ
れると、同図に示すような光出力パルスPou〒−1,
POLI? −2が発生する。
FIG. 2 shows the output characteristics of the semiconductor laser 1, in which the semiconductor laser 1 is driven by a first pulse P+, a driving current pulse P,
It is driven by a signal obtained by superimposing the two pulses and a second pulse Pt. 1st. The amplitude of each of the second pulses P+ and Pg is set to be greater than the oscillation starting current I of the semiconductor laser, and when the semiconductor laser 1 is driven by the superimposed signal and the second pulse P2, as shown in the figure. Optical output pulse Pou〒-1,
POLI? -2 occurs.

前記駆動電流制御部4は、変調電圧が与えられるスイッ
チ7と、第3図(1)に示すタイミングの制御パルスC
1を発生してスイッチ7に与えるパルス発生回路6とを
含むもので、スイッチ7は変調電圧により前記パルスC
1をパルス変調して駆動電流パルスP0を生成し、これ
をレーザ駆動回路3へ出力する。
The drive current control section 4 includes a switch 7 to which a modulation voltage is applied, and a control pulse C having a timing shown in FIG. 3(1).
1 and a pulse generating circuit 6 which generates the pulse C1 and applies it to the switch 7, and the switch 7 generates the pulse C1 by a modulated voltage.
1 to generate a drive current pulse P0, which is output to the laser drive circuit 3.

バイアス電流制御部5は、前記パルス発生回路6に加え
て、増幅回路8.スイッチ9.ホールビ回路10.比較
制御回路11.パルス生成回路12をその構成として含
むものである。
In addition to the pulse generation circuit 6, the bias current control section 5 includes an amplifier circuit 8. Switch 9. Holby circuit 10. Comparison control circuit 11. The configuration includes a pulse generation circuit 12.

増幅回路8はフォトダイオード2で得た受光電流を増幅
して電圧変換する。スイッチ9は増幅回路8のパルス出
力につき前記光出力パルスPout−2のタイミング位
置でレベル検出を行い、ホールド回路10はその検出値
をホールドするもので、パルス発生回路6が発生する制
御パルスC2(第3図(2)に示す)のタイミングに対
応して前記のレベル検出および検出値の保持が行われる
。ホールド回路10の出力は比較制御回路11に与えら
れ、この比較制御回路11はこの入力値と所定の基準値
との差に応じてレーザ駆動回路3へ与えるバイアス電流
の値を増減する。
The amplifier circuit 8 amplifies the light-receiving current obtained by the photodiode 2 and converts it into voltage. The switch 9 detects the level of the pulse output of the amplifier circuit 8 at the timing position of the optical output pulse Pout-2, and the hold circuit 10 holds the detected value, and the control pulse C2 ( The above-mentioned level detection and detection value holding are performed in accordance with the timing shown in FIG. 3 (2). The output of the hold circuit 10 is given to a comparison control circuit 11, and the comparison control circuit 11 increases or decreases the value of the bias current given to the laser drive circuit 3 according to the difference between this input value and a predetermined reference value.

つぎのパルス生成回路12には、パルス発生回路6より
第3図(3)に示すタイミングの制御パルスC3が与え
られるもので、このパルス生成回路12は比較制御回路
部11の出力の大きさに応じた振幅をもつ第1.第2の
パルスPI、Pzを生成して、これらをレーザ駆動回路
3へ出力する。
The next pulse generating circuit 12 is supplied with a control pulse C3 having the timing shown in FIG. 3 (3) from the pulse generating circuit 6. The first one with the corresponding amplitude. Second pulses PI and Pz are generated and output to the laser drive circuit 3.

上記の構成において、レーザ駆動回路3が第1、第2の
パルスP、、P、に駆動電流パルスP、を重畳した信号
により半導体レーザ1を駆動すると、半導体レーザlは
光出力パルスP out −1,P out−2を発生
し、その光は被測定物へ照射され、またモニタ用のフォ
トダイオード2で受光される。フォトダイオード2は光
電変換により受光電流を出力し、増幅回路8はパルス出
力をスイッチ9へ与える。スイ°ツチ9にはパルス発生
回路6より第2のパルスP!に対応するタイミングの制
御パルスC2が与えられ、この制御パルスC2のタイミ
ングで前記受光パルスのレベル検出が行われて、ホール
ド回路10でその検出値が保持される。このホールド値
は比較制御回路11に与えられ、この比較制御回路11
は所定の基準値との差に基づきレーザ駆動回路3へ与え
るバイアス電流を増減して、半導体レーザ1の光出力を
一定に維持するようになす。この比較制御回路11に与
えられる基準値は、バイアス電流が前記発振開始電流■
いよりわずかに大きくなる程度に設定されており、これ
によりバイアス電流による半導体レーザ1の発光分を最
少限度に保つようにしである。
In the above configuration, when the laser drive circuit 3 drives the semiconductor laser 1 with a signal obtained by superimposing the drive current pulse P on the first and second pulses P, , P, the semiconductor laser l outputs an optical output pulse P out - 1, P out-2 is generated, the light is irradiated onto the object to be measured, and is also received by the photodiode 2 for monitoring. The photodiode 2 outputs a light-receiving current through photoelectric conversion, and the amplifier circuit 8 provides a pulse output to the switch 9. The switch 9 receives a second pulse P! from the pulse generating circuit 6! A control pulse C2 having a timing corresponding to the control pulse C2 is applied, and the level of the received light pulse is detected at the timing of this control pulse C2, and the detected value is held in the hold circuit 10. This hold value is given to the comparison control circuit 11, and this comparison control circuit 11
increases or decreases the bias current applied to the laser drive circuit 3 based on the difference from a predetermined reference value, thereby maintaining the optical output of the semiconductor laser 1 constant. The reference value given to this comparison control circuit 11 is such that the bias current is the oscillation starting current
The bias current is set to be slightly larger than the bias current, so that the amount of light emitted by the semiconductor laser 1 due to the bias current is kept to a minimum.

この比較制御回路11の出力は、パルス生成回路12に
与えられ、このパルス生成回路12はパルス発生回路6
より制御パルスC3を受けて、比較制御回路11の出力
の大きさに応じた振幅をもつ第1.第2のパルスP、、
Ptを生成して、これらをレーザ駆動回路3へ出力する
。このためレーザ駆動回路3には、常時バイアス電流が
与えられることはな(、第1.第2の各パルスP、、P
Rのパルス幅に相当する期間だけバイアス電流が与えら
れるから、レーザ駆動回路3での消費電流は小さく抑え
られる。
The output of this comparison control circuit 11 is given to a pulse generation circuit 12, which is connected to the pulse generation circuit 6.
In response to the control pulse C3, the first . second pulse P,
Pt is generated and outputted to the laser drive circuit 3. Therefore, a bias current is not constantly applied to the laser drive circuit 3 (each of the first and second pulses P, P
Since the bias current is applied only for a period corresponding to the pulse width of R, the current consumption in the laser drive circuit 3 can be kept small.

〈発明の効果〉 この発明は上記の如く、バイアス電流を与えるための第
1のパルスと半導体レーザの光出力をモニタするための
第2のパルスとを生成し、第1のパルスに駆動電流パル
スを重畳して半導体レーザを駆動するようにしたから、
常時直流バイアス電流を与える方式の従来例と比較して
、駆動回路部での消費電流を小さく抑えることが可能と
なるなど、発明目的を達成した顕著な効果を奏する。
<Effects of the Invention> As described above, the present invention generates a first pulse for applying a bias current and a second pulse for monitoring the optical output of a semiconductor laser, and adds a drive current pulse to the first pulse. Since we drove the semiconductor laser by superimposing
Compared to the conventional method of constantly applying a direct current bias current, the current consumption in the drive circuit section can be suppressed to a small level, and the present invention has a remarkable effect of achieving the purpose of the invention.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例にかかる半導体レーザの光
出力制御装置の全体構成を示すブロック図、第2図は半
導体レーザの特性並びにこの発明の原理を示す説明図、
第3図は第1図の回路のタイムチャート、第4図は半導
体レーザの特性を示す説明図である。 1・・・・半導体レーザ 2・・・・フォトダイオード 3・・・・レーザ駆動回路 4・・・・駆動電流制御部 5・・・・バイアス電流制御部 7.9・・・・スイッチ 11・・・・比較制御回路 12・・・・パルス生成回路 舒 図 半導りトレーナの牛トド主Aひ゛Yニジiiト明り原理
求示シカf萌図せ )力 子材レーゲあす寿・1む示す説明g乙
FIG. 1 is a block diagram showing the overall configuration of a semiconductor laser optical output control device according to an embodiment of the present invention, FIG. 2 is an explanatory diagram showing the characteristics of the semiconductor laser and the principle of the present invention,
FIG. 3 is a time chart of the circuit of FIG. 1, and FIG. 4 is an explanatory diagram showing the characteristics of the semiconductor laser. 1... Semiconductor laser 2... Photodiode 3... Laser drive circuit 4... Drive current control section 5... Bias current control section 7.9... Switch 11. ... Comparison control circuit 12 ... Pulse generation circuit diagram Semiconductor trainer's cow sea lion master Explanation

Claims (1)

【特許請求の範囲】 半導体レーザと、 パルス変調された駆動電流パルスを、バイアス電流を与
えるための第1のパルスに重畳した信号で半導体レーザ
を駆動するための駆動回路部と、 半導体レーザの光出力を検出するための光検出部と、 前記第1のパルスを駆動電流パルスと同じタイミングで
生成すると共に、その中間のタイミングで第2のパルス
を生成するパルス生成回路部とから成り、 前記パルス生成回路部は、 光検出器で得た受光信号のレベルを前記第2のパルスの
発生タイミングの位置で検出するためのレベル検出回路
部と、 レベル検出回路部による検出値と基準値との差に応じて
第1、第2の各パルスの振幅を制御する比較制御回路部
とを具備して成る半導体レーザの光出力制御装置。
[Scope of Claims] A semiconductor laser; a drive circuit section for driving the semiconductor laser with a signal obtained by superimposing a pulse-modulated drive current pulse on a first pulse for applying a bias current; and light of the semiconductor laser. It consists of a photodetection section for detecting the output, and a pulse generation circuit section that generates the first pulse at the same timing as the drive current pulse and generates the second pulse at an intermediate timing, The generation circuit section includes a level detection circuit section for detecting the level of the light reception signal obtained by the photodetector at the position of the generation timing of the second pulse, and a difference between the detected value by the level detection circuit section and a reference value. 1. An optical output control device for a semiconductor laser, comprising: a comparison control circuit section that controls the amplitude of each of the first and second pulses according to the amplitude of the first and second pulses.
JP29499388A 1988-11-22 1988-11-22 Optical output controller for semiconductor laser Pending JPH02140986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29499388A JPH02140986A (en) 1988-11-22 1988-11-22 Optical output controller for semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29499388A JPH02140986A (en) 1988-11-22 1988-11-22 Optical output controller for semiconductor laser

Publications (1)

Publication Number Publication Date
JPH02140986A true JPH02140986A (en) 1990-05-30

Family

ID=17814958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29499388A Pending JPH02140986A (en) 1988-11-22 1988-11-22 Optical output controller for semiconductor laser

Country Status (1)

Country Link
JP (1) JPH02140986A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07193306A (en) * 1993-12-27 1995-07-28 Nec Corp Optical fiber amplifier and controlling method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07193306A (en) * 1993-12-27 1995-07-28 Nec Corp Optical fiber amplifier and controlling method thereof

Similar Documents

Publication Publication Date Title
EP0649201B1 (en) Amplitude detection scheme for optical transmitter control
JPH05244097A (en) Drive system for e/o array
JPH0273682A (en) Laser diode driving method and device
JPH0210615B2 (en)
JPS5842411B2 (en) distance measuring device
JP2945042B2 (en) Laser diode drive
JP2661574B2 (en) LN modulator DC bias circuit
KR900013476A (en) Method for determining monitor sensitivity of radiation emitting device and control system of the device
US5903247A (en) Servo controlled liquid crystal windows
JPH02140986A (en) Optical output controller for semiconductor laser
JPS63193583A (en) Rectangular wave modulating circuit of laser diode
JPH05323245A (en) Control system for optical modulation
JPH05232412A (en) Controller for linbo3 mach-zehnder interference type modulator
JP2000200922A (en) Optical signal detecting device and its method
JP2613670B2 (en) Drive circuit for semiconductor laser
JPS6152042A (en) Semiconductor laser driver
JPS6047782B2 (en) Light emitting element output stabilization circuit
JPH02135788A (en) Optical output controller for semiconductor laser
KR100246772B1 (en) Device for driving laser
JPH0247710B2 (en)
JPH04175679A (en) Optical transmission circuit
JPH0412701Y2 (en)
JPH0324521A (en) Optical modulation circuit
JPH04359573A (en) Optical transmission device
JPH0534459A (en) Laser distance measuring apparatus