JPH02139082A - Apparatus for heating extra-high purity water - Google Patents
Apparatus for heating extra-high purity waterInfo
- Publication number
- JPH02139082A JPH02139082A JP29161388A JP29161388A JPH02139082A JP H02139082 A JPH02139082 A JP H02139082A JP 29161388 A JP29161388 A JP 29161388A JP 29161388 A JP29161388 A JP 29161388A JP H02139082 A JPH02139082 A JP H02139082A
- Authority
- JP
- Japan
- Prior art keywords
- extra
- high purity
- purity water
- heating
- quartz tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 33
- 239000012498 ultrapure water Substances 0.000 title claims abstract description 24
- 239000010453 quartz Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 20
- 238000011109 contamination Methods 0.000 abstract description 6
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 3
- 239000010935 stainless steel Substances 0.000 abstract description 3
- 238000010828 elution Methods 0.000 abstract description 2
- 229910021645 metal ion Inorganic materials 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体製造工程中で用いる超純水の加熱装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heating device for ultrapure water used in a semiconductor manufacturing process.
従来、この稀の超純水の加熱装置としては、電気ヒータ
ー式や蒸気熱交換方式があり、電気ヒーター式において
は第５図に示すように、−純水を槽内に満たして槽中に
入れたステンレスヒーター又は石英ヒーターに通電し純
水を加熱し所定の高温純水を得るものであり主として半
導体製・造装置の一部に組み込まれ、第６図に示すよう
に、蒸気熱交換方式においては蒸気で加熱した熱媒体を
熱交換機に通し純水を加熱するもので工場の施設の一部
とする大規模のものが一般的である。Conventionally, there are electric heater type and steam heat exchange type as heating devices for this rare ultrapure water.In the electric heater type, as shown in Figure 5, - Pure water is filled in the tank and the tank is heated. This device heats pure water by applying electricity to a stainless steel heater or quartz heater placed in the container to obtain pure water at a specified high temperature.It is mainly incorporated into a part of semiconductor manufacturing equipment, and as shown in Figure 6, it uses a steam heat exchange method. In , pure water is heated by passing a heat medium heated by steam through a heat exchanger, and it is generally a large-scale device that is part of the factory facility.
上述した従来の超純水の加熱装置のうち電気ヒーター式
は、昇温に時間がかかり、かつ槽式の為に高温純水が連
続的に得られない、高純度の高温純水が得られない等の
欠点がある。又蒸気熱交換機方式においては、熱交換機
部において交換機からの重金属イオンによるコンタミネ
ーションを防げないという欠点を有していた。Among the conventional ultrapure water heating devices mentioned above, the electric heater type takes time to raise the temperature, and because it is a tank type, high temperature pure water cannot be obtained continuously. There are some disadvantages such as no. Furthermore, the steam heat exchanger system has the disadvantage that it cannot prevent contamination of the heat exchanger section with heavy metal ions from the exchanger.
本発明の超純水の加熱装置は、金属によるシールド部を
内面に有する容器内に、石英パイプによる加熱部を設け
、前記容器の一部に設けられた窓を通して前記容器外部
から前記容器内部の前記加熱部に電磁波を放射し、これ
により前記石英パイプ内を流れる超純水を所定温度に加
熱することを特徴とする。In the ultrapure water heating device of the present invention, a heating section made of a quartz pipe is provided in a container having a metal shield section on the inner surface, and a heating section made of a quartz pipe is provided inside the container from the outside of the container through a window provided in a part of the container. It is characterized in that electromagnetic waves are radiated to the heating section, thereby heating the ultrapure water flowing in the quartz pipe to a predetermined temperature.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of one embodiment of the present invention.
１ａは本装置加熱部本体外装で、ｌｂは銅又は他の良導
体で構成された電磁シールド箱、１ｃはマグネトロンに
よる高周波加熱源、１ｄは高圧電源部、１ｇは石英管に
よるコイルであり、ウィンド一部１１を通して１０より
放射される２４５０ＭＨｚのマイクロ波を効率よく吸収
出来る様に１ｂ内においてコイル状になっており、ｌｆ
側より導入された冷純水は１ｇ部においてマイクロ波に
より加熱されて高温となりｌｊ側へ排出される。1a is the exterior of the heating section of this device, lb is an electromagnetic shielding box made of copper or other good conductor, 1c is a high frequency heating source using a magnetron, 1d is a high voltage power source, 1g is a coil made of a quartz tube, In order to efficiently absorb the 2450 MHz microwave radiated from 10 through part 11, it is coiled in 1b, and lf
The cold pure water introduced from the side is heated by microwaves in the 1 g portion to reach a high temperature and is discharged to the lj side.
このとき温度測定部１ｈで高温純水の水温を測定し所定
の温度になる様１０部のエアーオペレートバルブをコン
トロールして純水流入流量を調整する。本装置において
は第１図のごとく加熱部は全て石英管にて構成すること
が出来、ステンレス管ヒーター使用時のときの様に金属
イオンの溶出などコンタミネーションが全くない。流入
側とまったく同じ比抵抗の高温純水を得ることが出来る
。At this time, the temperature of the high-temperature pure water is measured by the temperature measuring section 1h, and the flow rate of pure water inflow is adjusted by controlling the 10 air operated valves so that the temperature reaches a predetermined temperature. In this device, as shown in Fig. 1, all the heating parts can be constructed of quartz tubes, and there is no contamination such as elution of metal ions, unlike when using a stainless steel tube heater. High-temperature pure water with exactly the same resistivity as the inlet side can be obtained.
第２図は本装置の高周波加源部馴すものであり、第１図
の１０及び１ｄの部分である。第２図において２ａは高
電圧発生トランス、２ｂは高耐圧コンデンサ、２ｃは整
流器、２ｄはマグネトロンであり、２ｄに高電圧を印加
し発生した電磁波を第１図の１１の窓を通して１ｇに照
射することにより１ｇ中に流れる超純水が分子振動を生
じ加熱することが出来る。２ｄによる発振周波数は１０
０１００Ｏより３０００ＭＨｚ前後迄使用可能であり、
周波数の高い方が本装置の加熱効率を高くすることが出
来る。FIG. 2 shows the high frequency source section of the present device, and corresponds to portions 10 and 1d in FIG. 1. In Figure 2, 2a is a high voltage generation transformer, 2b is a high voltage capacitor, 2c is a rectifier, and 2d is a magnetron.A high voltage is applied to 2d, and the generated electromagnetic waves are irradiated to 1g through the window 11 in Figure 1. As a result, the ultrapure water flowing in 1 g causes molecular vibrations and can be heated. The oscillation frequency due to 2d is 10
Can be used from 0100O to around 3000MHz,
The higher the frequency, the higher the heating efficiency of this device can be.
第４図は本発明の一実施例の効果を示すものであり、横
軸に加熱前の超純水比抵抗値を示し縦軸に加熱後の比抵
抗値を示す。４ｃは第５図の加熱装置を使用したときの
出力側超純水の比抵抗値を示す曲線であり、４ｂは第６
図の加熱装置を使用したときの出力側超純水の比抵抗値
を示す曲線である。いずれも比抵抗値が高い領域で出力
側の比抵抗値が下ってきており高温純水が加熱中に汚染
され比抵抗値の高い純度の高い高温純水が得られないが
、４ａに示す本発明の高温純水では加熱部における金属
汚染が皆無である為、非常に純度の高い比抵抗の高い高
温純水が得らるれことかわかる。FIG. 4 shows the effect of one embodiment of the present invention, in which the horizontal axis shows the specific resistance value of ultrapure water before heating, and the vertical axis shows the specific resistance value after heating. 4c is a curve showing the specific resistance value of the ultrapure water on the output side when the heating device shown in FIG.
This is a curve showing the specific resistance value of ultrapure water on the output side when the heating device shown in the figure is used. In both cases, the specific resistance value on the output side decreases in the region where the specific resistance value is high, and the high-temperature pure water is contaminated during heating, making it impossible to obtain high-temperature pure water with a high specific resistance value. It can be seen that the high temperature pure water of the invention has no metal contamination in the heating section, so it is possible to obtain high temperature pure water with very high purity and high specific resistance.
第３図は本発明の他の実施例を示す縦断面図である。本
図において３ａは金属導体で形成された外箱兼シールド
箱であり、マイクロ波発振部３ｃは３ａの一部に開けら
れた窓３ｈにより石英細管３ｂに向って２４５０ＭＨｚ
のマイクシウェーブを放射する。３ｆから注入された純
水は３ｅの加圧ポンプ３ｄのフィルターを通って加熱部
３ｂに送られる。３ｆ、３ｇは石英管であり３ｂは石英
細管である。３１：１部で純水はマイクロ波により加熱
され３ｇより高温純水として必要な半導体装置へ供され
る効果について該−実施例と同様なことはいうまでもな
い。FIG. 3 is a longitudinal sectional view showing another embodiment of the present invention. In this figure, 3a is an outer box/shield box made of a metal conductor, and a microwave oscillating part 3c emits 2450 MHz toward the quartz tube 3b through a window 3h opened in a part of 3a.
Emits a microphone wave. The pure water injected from 3f passes through the filter of the pressure pump 3d of 3e and is sent to the heating section 3b. 3f and 3g are quartz tubes, and 3b is a quartz tube. It goes without saying that the pure water at a ratio of 31:1 is heated by microwaves, and the effect of supplying the purified water at a higher temperature than 3 g to the required semiconductor device is similar to that of the above embodiment.
以上説明したように本発明は、石英管中に通した超純水
をマイクロ波により分子間振動を利用して直接加熱する
ことにより、加熱機構での金属汚染を完全に防ぐことが
出来、高温の超純水を連続的に得ることが出来る効果が
ある。As explained above, the present invention can completely prevent metal contamination in the heating mechanism by directly heating ultrapure water passed through a quartz tube using microwaves using intermolecular vibrations, and can achieve high temperatures. This has the effect of being able to continuously obtain ultrapure water.
第１図は本発明の一実施例の超純水連続加熱装置の縦断
面図、第２図は第１図のマイクロ波発振部及び高圧電源
部回路図、第３図は本発明の超純水連続加熱装置の他の
実施例の縦断面図、第４図は本発明の一実施例及び従来
装置での入力超純水と出力超純水の比抵抗の相関図、第
５図は従来の石英ヒーター式純水加熱機の縦断面図、第
６図は従来の熱交換式純水加熱装置の縦断面図である。
ｌａ・・・・・・本装置外装、ｌｂ・・・・・・シール
ド、ｌｃ・・・・・・高周波発生部、１ｄ・・・・・・
電源部、１ｅ・・・・・・弁、１ｆ・・・・・・石英管
（入力側）、１ｇ・・・・・・石英管コイル、ｌｈ・・
・・・・温度測定機、１１・・・・・・電磁波放射窓、
１ｊ・・・・・・石英管（出力側）、２ａ・・・・・・
高圧トランス、２ｂ・・・・・・高圧コンデンサ、２ｃ
・・・・・・整流機、２ｄ・・・・・・マグネトロン、
３ａ・・・・・・本装置外わく、３ｂ・・・・・・石英
細管、３ｃ・・・・・・電磁波発生部、３ｄ・・・・・
・フィルタ、３ｅ・・・・・・加圧ポンプ、３ｆ・・・
・・・石英管（入力側）、３ｇ・・・・・・石英管（出
力側）、３ｈ・・・・・・電磁波放射窓、４ａ・・・・
・・本装置による超純水比抵抗入出力比較線、４ｂ・・
・・・・従来装置（第５図）による超純水比抵抗入出力
比較線、４ｃ・・・・・・従来装置（第６図）による超
純水比抵抗入出力比較線、５ａ・・・・・・従来装置の
槽、５ｂ・・・・・・ヒーター５ｃ・・・・・・石英管
、５ｄ・・・・・・純水、６ａ・・・・・・熱交換機、
６ｂ・・・・・・熱媒体加熱機、６ｃ・・・・・・加圧
ポンプ、６ｄ・・・・・・熱交換チューブ、６ｅ・・・
・・・フィルター ６ｆ・・・・・・加圧ポンプ。
代理人 弁理士 内 原 晋
芽
菌
第
オ
畢FIG. 1 is a vertical cross-sectional view of a continuous ultrapure water heating device according to an embodiment of the present invention, FIG. 2 is a circuit diagram of the microwave oscillation section and high voltage power supply section of FIG. 1, and FIG. FIG. 4 is a longitudinal cross-sectional view of another embodiment of the continuous water heating device, FIG. FIG. 6 is a vertical sectional view of a conventional heat exchange type pure water heating device. la... Exterior of this device, lb... Shield, lc... High frequency generator, 1d...
Power supply section, 1e... Valve, 1f... Quartz tube (input side), 1g... Quartz tube coil, lh...
... Temperature measuring device, 11 ... Electromagnetic radiation window,
1j...Quartz tube (output side), 2a...
High voltage transformer, 2b...High voltage capacitor, 2c
... Rectifier, 2d ... Magnetron,
3a... Outer frame of this device, 3b... Quartz tube, 3c... Electromagnetic wave generating section, 3d...
・Filter, 3e... Pressure pump, 3f...
...Quartz tube (input side), 3g...Quartz tube (output side), 3h...Electromagnetic radiation window, 4a...
・・Ultra pure water specific resistance input/output comparison line using this device, 4b・・
...Ultra pure water specific resistance input/output comparison line using the conventional device (Fig. 5), 4c...Ultra pure water specific resistance input/output comparison line using the conventional device (Fig. 6), 5a... ... Tank of conventional device, 5b ... Heater 5c ... Quartz tube, 5d ... Pure water, 6a ... Heat exchanger,
6b... Heat medium heating machine, 6c... Pressure pump, 6d... Heat exchange tube, 6e...
... Filter 6f ... Pressure pump. Agent Patent Attorney Uchihara Shinbokudai
Claims (1)
イプによる加熱部を設け、前記容器の一部に設けられた
窓を通して前記容器外部から前記容器内部の前記加熱部
に電磁波を放射し、これにより前記石英パイプ内を流れ
る超純水を所定温度に加熱することを特徴とする超純水
の加熱装置。A heating part made of a quartz pipe is provided in a container having a metal shield part on the inner surface, and electromagnetic waves are radiated from the outside of the container to the heating part inside the container through a window provided in a part of the container. An ultrapure water heating device, characterized in that the ultrapure water flowing in the quartz pipe is heated to a predetermined temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29161388A JPH02139082A (en) | 1988-11-18 | 1988-11-18 | Apparatus for heating extra-high purity water |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29161388A JPH02139082A (en) | 1988-11-18 | 1988-11-18 | Apparatus for heating extra-high purity water |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02139082A true JPH02139082A (en) | 1990-05-29 |
Family
ID=17771218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29161388A Pending JPH02139082A (en) | 1988-11-18 | 1988-11-18 | Apparatus for heating extra-high purity water |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02139082A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002067308A1 (en) * | 2001-02-20 | 2002-08-29 | Tokyo Electron Limited | System and method for utilization of waste heat of semiconductor equipment and heat exchanger used for utilization of waste heat of semiconductor equipment |
| CN103994582A (en) * | 2014-06-11 | 2014-08-20 | 太原理工大学 | Microwave heating type kitchen electric water heater |
| CN104341070A (en) * | 2014-10-21 | 2015-02-11 | 苏州富奇诺水治理设备有限公司 | Microwave water treatment device capable of self heat dissipation |
-
1988
- 1988-11-18 JP JP29161388A patent/JPH02139082A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002067308A1 (en) * | 2001-02-20 | 2002-08-29 | Tokyo Electron Limited | System and method for utilization of waste heat of semiconductor equipment and heat exchanger used for utilization of waste heat of semiconductor equipment |
| US6799539B2 (en) | 2001-02-20 | 2004-10-05 | Tokyo Electron Limited | System and method for utilization of waste heat of semiconductor equipment and heat exchanger used for utilization of waste heat of semiconductor equipment |
| CN103994582A (en) * | 2014-06-11 | 2014-08-20 | 太原理工大学 | Microwave heating type kitchen electric water heater |
| CN104341070A (en) * | 2014-10-21 | 2015-02-11 | 苏州富奇诺水治理设备有限公司 | Microwave water treatment device capable of self heat dissipation |
| CN104341070B (en) * | 2014-10-21 | 2016-04-27 | 苏州富奇诺水治理设备有限公司 | A kind of Microwave Water treatment facility that can certainly dispel the heat |
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