JPH02123657A - Mass spectrograph device for secondary ion - Google Patents
Mass spectrograph device for secondary ionInfo
- Publication number
- JPH02123657A JPH02123657A JP63276606A JP27660688A JPH02123657A JP H02123657 A JPH02123657 A JP H02123657A JP 63276606 A JP63276606 A JP 63276606A JP 27660688 A JP27660688 A JP 27660688A JP H02123657 A JPH02123657 A JP H02123657A
- Authority
- JP
- Japan
- Prior art keywords
- tungsten
- objective
- diaphragm
- secondary ion
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 239000010937 tungsten Substances 0.000 claims abstract description 10
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 150000002500 ions Chemical group 0.000 claims 3
- 230000006866 deterioration Effects 0.000 abstract description 5
- 230000004927 fusion Effects 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分舒〕
本発明は、二次イオン質量分析装置の一次イオン光学系
の対物絞りの材質に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to the material of an objective aperture of a primary ion optical system of a secondary ion mass spectrometer.
［発明の概要］
本発明は、−次イオン光学系において発生するイオンビ
ームな細束化させ均一ビームを得るための対物絞りにお
いて、対物絞りの材質にタングステンを使用するもので
ある。[Summary of the Invention] The present invention uses tungsten as the material of the objective diaphragm for narrowing the ion beam generated in the -order ion optical system and obtaining a uniform beam.
［従来の技術］
従来、二次イオン質量分析装置の対物絞りの材質として
モリブデンが使用されていた。[Prior Art] Conventionally, molybdenum has been used as a material for the objective aperture of a secondary ion mass spectrometer.
［発明が解決しようとする課題］
しかし、従来の対物絞りの材質であるモリブデンを使用
した場合、−次イオンビームによるスパッタ率が他の材
質に比べ劣るため、長時１川使用していると劣下して破
損してしまい対物絞りの役目を果たさないという問題点
を有していた。[Problem to be solved by the invention] However, when molybdenum, which is the material of the conventional objective aperture, is used, the sputtering rate by the -order ion beam is inferior to other materials, so if one material is used for a long time, The problem was that it deteriorated and was damaged, and could no longer function as an objective aperture.
そこで、本発明は従来のこのような問題点を解決するた
め、対物絞りの材質に耐スパツタ率の優れているタング
ステンを使用し、対物絞りの長寿命化を計ることを目的
としている。Therefore, in order to solve these conventional problems, the present invention aims to extend the life of the objective diaphragm by using tungsten, which has excellent spatter resistance, as the material for the objective diaphragm.
［課題を解決するための手段］
上記問題点を解決するために、本発明の二次イオン質量
分析装置の対物絞りの材質にタングステンを使用するこ
とを特徴とする。[Means for Solving the Problems] In order to solve the above problems, the secondary ion mass spectrometer of the present invention is characterized by using tungsten as the material of the objective aperture.
［実施例］
以下に本発明の詳細な説明する。二次イオン質量分析装
置の対物絞りは、−次イオン光学系において発生する一
次イオンビームな直接受けるためビームスバッタによる
劣化が激しい状況下にある。このため、この劣化を抑え
るためにはスパッタ率が高く、融点の高い材質を使用す
る必要があり、本発明では対物絞りの材質としてタング
ステンを使用することにより、従来使用していたモリブ
デンの材質のものよりも寿命が１．５倍に向上し長寿命
化をはかることができた。[Example] The present invention will be described in detail below. The objective aperture of a secondary ion mass spectrometer is subject to severe deterioration due to beam scatter because it directly receives the primary ion beam generated in the -order ion optical system. Therefore, in order to suppress this deterioration, it is necessary to use a material with a high sputtering rate and a high melting point.In the present invention, by using tungsten as the material for the objective aperture, it is possible to replace the previously used molybdenum material. The lifespan has been improved by 1.5 times compared to the conventional one, making it possible to extend the lifespan.
これはアルゴンイオンエネルギー６００ ｅＶ のと・
きにおいて、スパッタ率がタングステンで（Ｌ、Ｓモリ
ブデンでα９でありこの比率と寿命が向上した比率とは
よく一致していてスパッタ率の差が大きく寄与している
ことがわかる。また−次イオンビームの照射を対物絞り
が受けると熱発生があるが、融点はタングステンの方が
モリブデンに比べ約１．５倍高いことも劣化を少なくし
長寿命化をはかることに影響している。This is an argon ion energy of 600 eV.
In the case of tungsten, the sputtering rate is α9 for L and S molybdenum, and this ratio and the ratio of improved lifespan agree well, indicating that the difference in sputtering rate makes a large contribution. Heat is generated when the objective aperture is exposed to beam irradiation, but the melting point of tungsten is approximately 1.5 times higher than that of molybdenum, which has an effect on minimizing deterioration and extending the life.
［発明の効果］
本発明は、以上述べたように対物絞りの材質をモリブデ
ンからタングステンに変更することにより、対物絞りの
寿命が約１．５倍に向上し対物絞りの長寿命化がはから
れるという大きな効果がある以
上[Effects of the Invention] As described above, in the present invention, by changing the material of the objective diaphragm from molybdenum to tungsten, the life of the objective diaphragm is increased by about 1.5 times, and the life of the objective diaphragm can be extended. As long as it has the great effect of
Claims (1)
オンビームの細束化をはかるための対物絞りの材質にタ
ングステンを使用することを特徴とする二次イオン質量
分析装置。A secondary ion mass spectrometer characterized in that, in a primary ion optical system that irradiates ions onto a sample, tungsten is used as a material for an objective aperture for narrowing the ion beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63276606A JPH02123657A (en) | 1988-11-01 | 1988-11-01 | Mass spectrograph device for secondary ion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63276606A JPH02123657A (en) | 1988-11-01 | 1988-11-01 | Mass spectrograph device for secondary ion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02123657A true JPH02123657A (en) | 1990-05-11 |
Family
ID=17571786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63276606A Pending JPH02123657A (en) | 1988-11-01 | 1988-11-01 | Mass spectrograph device for secondary ion |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02123657A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037587A (en) * | 1997-10-17 | 2000-03-14 | Hewlett-Packard Company | Chemical ionization source for mass spectrometry |
| CN107579027A (en) * | 2017-09-06 | 2018-01-12 | 上海华力微电子有限公司 | A kind of monitoring method of ion implantation apparatus tungsten metallic pollution |
-
1988
- 1988-11-01 JP JP63276606A patent/JPH02123657A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037587A (en) * | 1997-10-17 | 2000-03-14 | Hewlett-Packard Company | Chemical ionization source for mass spectrometry |
| CN107579027A (en) * | 2017-09-06 | 2018-01-12 | 上海华力微电子有限公司 | A kind of monitoring method of ion implantation apparatus tungsten metallic pollution |
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