JPH02123651A - Manufacture of semiconductor device manufacture device - Google Patents

Abstract

PURPOSE:To enable the drawing of high-precision charged particle beam pattern by coupling the second part comprising an insulation material to the hollow and symmetrical first part comprising a conductive semiconductor, and cutting the first part for forming an electrostatic type deflection electrode. CONSTITUTION:The first part 10 comprises a conductive SiC and is finished as a cylindrical part of high roundness. The second part 11 is made of an insulation material such as an alumina ceramic and wiring 12 is formed on the surface thereof by the screen printing method and the like. A leading form part 11a is formed integrally with the cylindrical part 11b of the second part 11 coupled to the lower end of the first part 10 for taking out the wiring 12. With the first and second parts 10 and 11 coupled to each other, a cutout part 13 is formed to divide the first part 10 into eight pieces. The cutout part 13 completely penetrates the first part 10 in an axial direction and reaches the second part 11, thereby separating electrically electrodes 3 from each other. According to the aforesaid construction, the precise operability of an electron beam can be improved.

Description

[Detailed Description of the Invention] [Summary] Regarding a method for manufacturing an electrostatic facing electrode used for charged particle beam exposure, ion implantation, etc. in the manufacturing process of semiconductor devices, it is possible to draw a highly accurate charged particle beam pattern. It is an object of the present invention to provide a method for manufacturing an electrostatic deflection type electrode, which includes: preparing a first integral part made of a conductive semiconductor or metal and having a hollow symmetrical shape; Fitting a second part made of an insulating material into the inner surface, forming a plurality of cuts extending from one end of the first part to the other end and reaching the second part, and dividing the first part by cutting. It is configured to have a predetermined number of electrodes.

[Industrial application field]

The present invention relates to a method for manufacturing an electrostatic deflection type electrode used for charged particle beam exposure, ion implantation, etc. in the manufacturing process of semiconductor devices. The electrostatic deflection type electrode of an exposure apparatus used for electron beam exposure that scans a wafer or mask to draw a pattern will be mainly described.

As a method for scanning an electron beam, a method using a magnetic field and a method using an electric field can be considered, and the present invention belongs to the latter method, which is an electrostatic steel internal mold scanning method.

[Conventional technology]

FIG. 2 shows the basic elements of an electron beam exposure apparatus. In the figure,
1 is a wafer, 2 is a focusing coil, 3 is a deflection electrode, and 4 is an electron beam. The deflection type electrode 4 is an electrode having a number of poles, such as 8 or 16 poles, and creates an electrostatic field for deflection by controlling the voltage applied thereto. The undeflected electron beam is designated 4a and the deflected electron beam is designated 4b. Electron beam exposure is performed by accurately swinging this electron beam 4 onto the wafer 1. Here, in order to accurately scan the electron beam, it is important to control the electric field created by the deflection electrode 4. Among the many factors that affect this is the position of each electrode, and if the electrode placement is not accurate, the accuracy of electron beam scanning will drop and there will be a problem that the desired pattern will not be drawn. The electrode arrangement is as shown in FIG.
are arranged symmetrically.

In the conventional method for manufacturing static single-sided electrodes, each electrode 3 was manufactured separately, assembled together, and fixed to a support using a suitable fixing method such as bolts.

[Problem to be solved by the invention]

In order to accurately draw a desired pattern using the above-mentioned electron beam exposure method, it is important for the electrode arrangement that each electrode 3 is arranged accurately and symmetrically with respect to the beam center axis 5. The deflection voltages applied to each electrode 3 are made on the premise that each voltage 3 is arranged symmetrically. However, if any of the electrodes deviates from the symmetrical position, the electron beam will not be deflected to a predetermined position by voltage application.

When patterning is performed using an electron beam exposure device incorporating an electrostatic deflection type electrode manufactured by a conventional method, the desired high-precision pattern may not be drawn. Specifically, if the electron beam exposure equipment has the same quality/performance, it should draw a pattern with the same accuracy, but depending on the individual equipment, the pattern accuracy may deteriorate in either the vertical or horizontal direction. A unique habit was recognized. Conventionally, operators have been familiar with the peculiarities of individual devices and have performed patterning while subtly modifying beam operations based on their experience and skill. The inventors investigated the cause of the inaccurate operation of the electron beam as described above, and found that some electrodes have a distance from the center axis of the electron beam of several tens of microns to 100 microns from the standard value. Or maybe there is something that is decreasing, and you need to find out what is the cause of this. It has been found that the cause of this is that each electrode is made separately and grouped together, resulting in an asymmetrical arrangement of the electrodes during operations such as bolt tightening. Although electron beam exposure has been described above, there is a possibility that the accuracy of the ion implantation pattern may similarly decrease in an ion implantation device manufactured by the conventional electrostatic deflection type electrode manufacturing method. Therefore, it is an object of the present invention to provide a method for manufacturing an electrostatic deflection type electrode that can draw a highly accurate charged particle beam pattern.

[Means to solve the problem]

The present invention is used in a charged particle beam processing device that deflects a charged particle beam, focuses it on a sample surface, and irradiates the charged particle beam to a desired position on the sample surface, and has an n-pole arrangement with respect to the central axis. A method for manufacturing an electrostatic deflection type electrode configured as a pole, the first step being to prepare a first integral part made of a conductive semiconductor or metal and having a hollow symmetrical shape; A second component made of an insulator is fitted onto the outer or inner surface of the first component, and a plurality of cuts extending from one end of the first component to the other end and reaching the second component are formed, and the first component is It is characterized by dividing the electrode into a predetermined number of electrodes, and the second
A first component made of an insulating material and having a hollow symmetrical shape is prepared, a second component made of an insulating material is fitted onto the outer surface or the inner surface of the first component, and the second component is connected from one end of the first component to the other end. A plurality of cuts are formed extending over the area and reaching the second part, the first part is divided by the cuts to form electrodes with a predetermined number of poles, and a conductive thin film is applied to the surface of the first part before or after forming the cuts. It is characterized by being coated.

(For cattle) The common feature of the first invention and the second invention is that a first part of an integral body having a hollow symmetrical shape is prepared, a second part made of an insulating material is fitted on the outer surface or inner surface of the first part, A plurality of cuts extending from one end of the first part to the other end and reaching the second part are formed, and the first part is divided by the cuts to form a predetermined number of electrodes. The reason why the first part is made into a single piece having a hollow symmetrical shape is as follows. Firstly, in order to make electrodes with a symmetrical arrangement around the electron beam, it is necessary to have a hollow shape.Secondly, in order to make electrodes with high precision symmetry, a hollow symmetrical integral body is required. is necessary. Such an integral part can be easily manufactured into a part with a roundness on the order of several tens of microns by lathe processing or the like.

Another feature common to the first invention and the second invention is that a plurality of cuts extending from one end of the first part to the other end and reaching the second part are formed, and the first part is divided by the cuts to form predetermined electrodes. The number of electrodes should be several. By forming the cut in this way, a part of the first component having excellent roundness can be used as an electrode as it is, and there is no need to stack the components together.

Further, the reason why the cut is extended to the second part is that each electrode needs to be electrically isolated.

The first invention uses a conductive material for the first part and the insulating material for the second part, and the second invention uses an insulating material coated with a conductive film for the first part. be.

If metal parts are used, non-magnetic metals must be used when a surrounding magnetic field is present. Also, if there are parts that create a fluctuating magnetic field near the beam, electromagnetic induction can cause eddy currents to flow in the metal, which may cause the beam to deflect, so metal cannot be used. Preferably, a semiconductor such as conductive SiC is used as the first component.

The shape of the first part may be any shape, such as a cylinder or a polygon, as long as it is hollow and symmetrical. The shape of the second part is usually the same as that of the first part.
Although it has the same shape as the part, it does not need to be the same shape as long as it can fix the first part after the cut is made.

〔Example〕 Hereinafter, the present invention will be explained in detail with reference to Examples.

1 and 4 are drawings showing an embodiment of the first invention.

The first part 10 is made of conductive SiC or the like, and is made of SIC which is finished as a highly circular cylindrical part by lathe processing or the like after firing. Conductive SiC has fairly high electrical conductivity and can be said to be completely non-magnetic, making it more suitable as an electrode material than metals. Its dimensions are determined by the rating of the electron beam device, and for example, the outer diameter is 20 mm. The second component is made of an insulating material such as an alumina-based ceramic. Alumina-based ceramics are fired at high temperatures and contain few gaseous impurities, so they do not emit contaminants even when exposed to high vacuum for electron beam generation, making them preferable as insulating materials for the second component. A predetermined number of wirings 12 are formed on the surface of the second component by screen printing or the like. The second part is a cylindrical part 11b that is fitted into the lower end of the first part 10, and a ring-shaped part 11a for drawing out the wiring 12.0 The roundness of the cylindrical part 11b is determined by the electron beam. Although it does not affect the deflection characteristics of the first part 10, a roundness equivalent to this is required in order to fit the first part 10. As shown in FIG. 1, when the first part 1° and the second part 11 are integrated,
As shown in FIG. 4, a cut 13 is formed to divide the first part 10 into a predetermined number of parts (eight in this embodiment), so that the roundness of the first part remains the same and the perfect symmetry of the electrode is achieved. It will be converted to This cut 13 passes completely through the first part in the axial direction and even reaches the second part 12, so that the electrodes 3 are electrically isolated from each other. 0-180° when forming notch 13
Two notches in the direction are formed by one cutting process, and then the direction is shifted by 90° and two notches in the 90-270' direction are similarly formed by one cutting process to form four notches. The shapes of these cuts then become symmetrical. That is, the shapes and dimensions of the electrodes 3 facing each other are substantially equal. Next, perform the same operation by shifting the cutting direction by 45". In this way, the circumferential dimension of the electrode 30 becomes symmetrical. The influence of this circumferential dimension on the precise operability of the electron beam. Although this is essentially less than a symmetrical arrangement of the electrodes with respect to the central axis, if the notches are formed as described above and the circumferential dimension is also symmetrical, the precision operability of the electron beam is further enhanced.

FIG. 5, FIG. 6, and FIG. 7 are drawings showing an embodiment of the second invention. Both the first part 10 and the second part 11 are made of an insulating material. After forming the cut 13 as shown in FIG. 6, a conductive skin [14] is formed on the surface of the tf 13 as shown in FIG.
form.

The parts other than the above are the same as in Example 1. In addition, the second
In the invention, the electrode lead wiring 12 may be omitted and the wiring wire may be directly bonded to the conductive film 14.

〔Effect of the invention〕

According to the present invention, the irradiation figure and area can be drawn with the same accuracy even when the charged particle beam is swung in any direction (up, down, left, right, top, bottom, right, left, etc.) of the surface to be processed. This contributes to high integration/fine patterning in manufacturing, and reduces the dependence on operator skill in operating charged particle beams.

[Brief explanation of drawings]

Figure 1 is an explanatory diagram 5 of the process of fitting the first part and the second part in the embodiment of the first invention, Figure 2 is an explanatory diagram of the basic elements of the electron beam exposure apparatus, and Figure 3 is the arrangement of the deflection electrodes. 4 is an explanatory diagram of the step of forming a notch in the first component following FIG. 1, FIG. 5 is an explanatory diagram of the step of fitting the first component and the second component in the embodiment of the second invention, FIG. 6 is an explanatory diagram of the step of forming a notch in the first component following FIG. 5, and FIG. 7 is an explanatory diagram of the conductive film and wiring forming step following FIG. 6. In the figure, 1 - wafer, 2 - electric flux coil, 3 - deflection electrode,
4 - electron beam, 5 - beam center axis, 8 poles, 10 - first part, 11 - second part, 13 - notch.

Claims (1)

[Claims] 1. A first component made of a conductive semiconductor or metal and having a hollow symmetrical shape is prepared, and a second component made of an insulating material is fitted onto the outer or inner surface of the first component, Forming a plurality of cuts extending from one end of the first part to the other end and reaching the second part, and dividing the first part with the cuts to produce an electrostatic deflection electrode having a predetermined number of electrodes. A method of manufacturing a semiconductor device manufacturing apparatus, characterized in that: 2. Prepare a first integral part made of an insulating material and having a hollow symmetrical shape, fit a second part made of an insulating material onto the outer or inner surface of the first part, and move from one end of the first part to the other end. A plurality of cuts are formed extending over the area and reaching the second part, the first part is divided by the cuts to form electrodes with a predetermined number of poles, and a conductive thin film is applied to the surface of the first part before or after forming the cuts. 1. A method of manufacturing a semiconductor device manufacturing apparatus, comprising manufacturing an electrostatic deflection electrode by coating.