JPH02122562A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH02122562A
JPH02122562A JP63274366A JP27436688A JPH02122562A JP H02122562 A JPH02122562 A JP H02122562A JP 63274366 A JP63274366 A JP 63274366A JP 27436688 A JP27436688 A JP 27436688A JP H02122562 A JPH02122562 A JP H02122562A
Authority
JP
Japan
Prior art keywords
circuit
voltage
nmos
substrate
power source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63274366A
Other languages
Japanese (ja)
Other versions
JP2906148B2 (en
Inventor
Hiroyuki Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63274366A priority Critical patent/JP2906148B2/en
Publication of JPH02122562A publication Critical patent/JPH02122562A/en
Application granted granted Critical
Publication of JP2906148B2 publication Critical patent/JP2906148B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE: To eliminate the need for making a substrate bias generating circuit and miniaturize an integrated circuit by causing a voltage at the high logic voltage side in an NMOS or a CMOS circuit located on a semiconductor substrate to be supplied directly by a power source terminal and the voltage at its low logic voltage side to be supplied by a step-down circuit and further, the voltage on a P-type semiconductor substrate or at a P-type well in which the NOS of the NMOS or the CMOS circuit is formed to be supplied by a grounding terminal.
CONSTITUTION: A power source terminal 3 and a high voltage side of a CMOS circuit in which an NMOS circuit 1 and PMOS circuit 2 are made up are connected through a PMOS 8 and then the low voltage side of the CMOS circuit is connected to the output side of a step-down circuit 4. Further, the P-type semiconductor substrate of the NMOS circuit or a P-type well is connected directly to a connecting terminal 6. This configuration allows the voltage amplitude of a MOS circuit to be expressed by means of a following equation: Amplitude voltage = Voltage VCC of power source- generating voltage V1 of step-down circuit. And then voltage difference between the P-type substrate or the P-type well and the source side of the NMOS circuit is impressed to the NMOS circuit as a substrate bias and its bias is obtained by the following equation: Substrate bias = Grounding voltage VSS-generating voltage VL of step- down circuit.
COPYRIGHT: (C)1990,JPO&Japio
JP63274366A 1988-11-01 1988-11-01 Semiconductor integrated circuit Expired - Fee Related JP2906148B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63274366A JP2906148B2 (en) 1988-11-01 1988-11-01 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63274366A JP2906148B2 (en) 1988-11-01 1988-11-01 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPH02122562A true JPH02122562A (en) 1990-05-10
JP2906148B2 JP2906148B2 (en) 1999-06-14

Family

ID=17540658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63274366A Expired - Fee Related JP2906148B2 (en) 1988-11-01 1988-11-01 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP2906148B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02196469A (en) * 1989-01-25 1990-08-03 Fujitsu Ltd Semiconductor device
JPH04206659A (en) * 1990-11-30 1992-07-28 Toshiba Corp Semiconductor memory
JPH04253366A (en) * 1991-01-29 1992-09-09 Toshiba Corp Gate array device, input circuit, output circuit, and voltage step down circuit
JPH05145071A (en) * 1991-09-30 1993-06-11 Fujitsu Ltd Mis field-effect semiconductor device and manufacture thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749260A (en) * 1980-09-09 1982-03-23 Toshiba Corp Semiconductor integrated circuit
JPS62208715A (en) * 1986-03-10 1987-09-14 Fujitsu Ltd Semiconductor integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749260A (en) * 1980-09-09 1982-03-23 Toshiba Corp Semiconductor integrated circuit
JPS62208715A (en) * 1986-03-10 1987-09-14 Fujitsu Ltd Semiconductor integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02196469A (en) * 1989-01-25 1990-08-03 Fujitsu Ltd Semiconductor device
JPH04206659A (en) * 1990-11-30 1992-07-28 Toshiba Corp Semiconductor memory
JPH04253366A (en) * 1991-01-29 1992-09-09 Toshiba Corp Gate array device, input circuit, output circuit, and voltage step down circuit
JPH05145071A (en) * 1991-09-30 1993-06-11 Fujitsu Ltd Mis field-effect semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JP2906148B2 (en) 1999-06-14

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