JPH02122070A - Plasma treatment-ion plating device - Google Patents

Abstract

PURPOSE:To stably, efficiently, and continuously treat a material by providing a plasma treating device in a vacuum vessel, and furnishing an ion-plating device through a sealing part. CONSTITUTION:Plural isolated electrodes 4 are radially set toward the outside in the vacuum vessel 1 through a power-transmission line 3 from a power supply part 2. A grounded electrode 5 is opposed to the isolated electrodes 4 so that the distances (<= about 10cm) between the surface and the surfaces of the isolated electrodes 4 are equalized to form a plasma treating space. A desired gas is introduced from an inlet hole 6, the space is evacuated to about 0.01-10mmHg, and a traveling material 29 is treated with plasma. An ion-plating space is provided in the vessel 1 through the sealing part 17 and evacuated to about 10<-2>Torr or less through a passage 16, a DC voltage is impressed on a cathode 7, and the traveling material 29 is ion-plated. By this method, the plasma treatment and ion plating can be continuously applied without the material 29 being discharged to the outside.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an apparatus capable of performing plasma processing and ion plating processing within the same apparatus.

More specifically, plasma treatment and ion plating are continuously and stably performed on membranes, films, cloth, fiber aggregates, equiplanar or relatively thin and medium-wide long sample rl. Regarding equipment.

(Conventional technology) Recently, membranes, films, fabrics, fiber aggregates, etc. have become highly functional and have high additive properties! i! In order to realize lI value conversion, those trials t'
There is an increasing demand for coating materials such as metals, ceramics, organic substances, inorganic compounds, etc. by ion plating, but at present there is no equipment that can perform the process continuously, uniformly, and efficiently.

For example, Japanese Patent Publication No. 63-35751 proposes a device for carrying out back separation, but this proposal requires one processing chamber for each unit process, and therefore requires partitions between each processing chamber. The equipment and overall size will become too large, and the processing +
111 is not sufficient as it cannot be easily changed. JP-A-58-120876 proposes an apparatus that performs metal coating after or simultaneously with ion bombardment, which consists of an ion bombardment zone and a metal coating zone. , the degree of vacuum is the same, and the effect of each zone is incomplete, or the effects of both zones are mixed, so it cannot necessarily be said to be perfect. These proposals are a kind of vacuum vessel. If you are only capable of processing, and you want to perform multiple treatments, you will need the same number of processing containers as the number of treatments, resulting in an extremely large-scale device, or you can change the type of processing and the order of processing arbitrarily. Or, it is difficult to ensure the purity of the effects of the two treatments. That is, at present, no apparatus has yet been proposed that can simultaneously perform plasma treatment, plasma polymerization, and ion plating treatment on relatively large samples.

(Problems to be Solved by the Invention) The purpose of the present invention is to propose an apparatus for efficiently ion plating a wide sample. The purpose of the present invention is to propose an apparatus capable of performing plasma processing (including plasma polymerization) as a treatment and then continuously performing ion plating treatment.

(Means for solving the problem) The plasma processing-ion plating processing apparatus of the present invention includes at least a plurality of non-grounded electrodes in a vacuum container,
A plasma processing apparatus having a grounded electrode facing the non-grounded electrode, a guiding means for passing the processed material between the non-grounded electrode and the grounded electrode, and a power introduction part disposed in the center of the non-grounded electrode group. The non-grounded electrode is connected to the power introduction part and is arranged radially outward, and has an ion plating processing space.

The treated objects to which the present invention can be applied are preferably flat objects such as membranes, films, fabrics, and fibrous structures, or objects that are relatively thin.

The shape and size of the vacuum container are not particularly limited as long as it can withstand a pressure difference of 1 atm between the inside and outside, but an opening/closing device is required to allow the materials to be processed and electrodes to enter and exit, and a peephole is provided to view the inside. Preferably, a plurality of non-grounded electrodes 4 are provided as shown in FIG. 1, and each of them is installed toward the outside from the power introduction section 2 via the power transmission path 3. 3 and 4 do not necessarily have to be straight lines, and the angles formed by the plurality of non-grounded electrodes do not have to be constant. The surface 5 of the pole faces the surface of the non-grounded electrode 4, preferably with a constant distance between the surfaces 6. The apparatus of the present invention comprises at least one plasma processing space and one ion plating processing space in the same container. has. The plasma processing space consists of a non-grounded dragon f7i4 extending radially from the power introduction part 2 in the center, and a grounded electrode 5 facing the non-grounded dragon f7i4. Note that it is preferable that a differential pumping device and a differential pressure holding device be provided in the ion plating processing space in order to have a higher degree of vacuum than in the plasma processing space.

FIG. 1 is a schematic front view showing an example of the device of the present invention,
Figure 2 shows the W-Z cut plane of the schematic front view, and Figure 3 shows the A power transmission path to a non-grounded electrode 4 in the space, 4 is a non-grounded electrode for plasma processing or plasma polymerization, 5 is a grounded electrode for plasma processing or plasma polymerization, and 76 is a gas or plasma for plasma processing. reactor.

Is it the introduction hole for monomer for polymerization? , 7 is an ion bus matching device, 11 is an introduction hole for ionizing plasma electricity, 1
6 is a passage leading to the differential exhaust device. 18.1
9 is the unwinding and winding roller of processing 11FI21 20
．． 21 and 22 are running guide rollers for the processed material 29. 17 is a seal portion for maintaining a pressure difference between the ion plating processing space and other spaces.

FIG. 2 is an xY cross-sectional view of FIG. 1. 24 is a power transmission section leading to the electrode for plasma treatment and/or alternating plasma polymerization; 23 is an insulating section between the power transmission section and the container; 25 is a frame supporting the processing roller, electrode plate, etc.; 26.2
7 is a lid for opening and closing forward or backward.

FIG. 3 is a sectional view taken along the line W-Z in FIG. 1. Figure 4a
``-'' C is a detailed drawing of the seal portion 17 in FIG. 1, where a is a labyrinth seal, b is a ripple type, and C is a seal roller one-type differential pressure holding device.The differential pressure is usually 8P = about 0.1 to 1 Lorr.The seal part that may come into contact with the processed material is made of relatively soft material such as plastic, soft metal, soft ceramic, etc. to prevent scratches on the surface of the processed material. And it is preferable to have a smooth surface, that is, a plastic labyrinth mountain, a plastic or rubber ripple, a seal roller with a plastic or rubber coating, etc. are preferable.

The material of the processing container 1 is not particularly limited as long as it can withstand a maximum differential pressure of 1 atmosphere, but the ion plating processing space should be made of metal that is difficult to absorb and desorb gas, or one that has been treated with a resin coating, glass coating, etc. preferable,
Electric power for plasma is introduced centrally from the power introduction part 2. It is transmitted to each non-grounded electrode through the power introduction part 2 to 3 arranged in the center, but from the power introduction part 2 to the non-grounded electrode 4. It is preferable that the electrical resistance and distance be equal in terms of power balance.In the device of the present invention, since the power introduction part is in one place, a single power source can be used, and multiple
Compared to when Itlf[ is used, mutual interference of high frequencies and plasma imbalance are almost eliminated.

The non-grounded dragon 8ii4 has 50 t(z
.

(By introducing power at a commercial frequency of ioHz, a low frequency of kilohertz, and a high frequency in the megahertz to gigahertz range, a low-temperature gas plasma is generated between the ground electrode. For stable generation of low-temperature gas plasma. is several KHz
A low frequency wave or a high frequency wave from several tens of KHz is preferable, but 1
A high frequency of 3.56 MHz is particularly preferable in terms of processing efficiency, processing cost, and the like.

The shape of the non-grounded electrode can be changed to flat, convex, or concave depending on the purpose. In addition, the shape of the ground electrode may normally be flat, but in order to maintain a uniform distance between the electrodes and the non-ground electrode, it may be flat, concave, or convex depending on the shape of the non-ground electrode. I can do it. The distance between the electrodes varies depending on the input energy, electrode shape, degree of vacuum, processing speed, and processing method such as plasma etching, plasma polymerization, or plasma CVD. It is better to do, usually 10
cm or less, preferably 5 cm 0 For example, in the case of oxygen plasma and the degree of vacuum is about 1 mmHg, 0.5 to 3
About crn is effective. The material of the electrodes/and 2 is preferably a highly conductive metal, such as aluminum, copper, iron, stainless steel, and various metal coatings thereof.As for the shape, flat plates, punched plates, meshes (gold m), etc. can be used. However, if the human power is 0.1 W/cm" or more, a flat plate without holes or recesses is preferable.

It is preferable that the non-grounded electrode 4 and the grounded electrode 5 be provided with a temperature-controlling bar passage therein to enable temperature control, particularly cooling. Any medium can be used as long as it has fluidity, but pure water, which is an electrical insulator, organic solvents, various heat exchange gases, and steam are preferable.As a temperature control device or cooling device, Various plasma treatments (
For example, the substrate temperature can be set to the most appropriate temperature according to the process (for example, plasma polymerization, plasma CVD, plasma etching, etc.), and the effects of each process can be maximized.

The degree of vacuum in the plasma processing space is a region where low-temperature gas plasma is stably generated, which is usually 0.01 to 10 mmHg.
, preferably 0.1 to 5 mm HB, more preferably 0.2 to lmmHg. To adjust the degree of vacuum,
This can be carried out by introducing gas or monomer gas together with the pumping speed, but in order to perform the desired treatment preferably, it is preferable to introduce 11 g of gas.

It is preferable that the gas is introduced through the gas introduction pipe 6 and blown out toward the processing surface of the object to be processed.This ensures that the newly introduced gas is always in contact with the processing surface of the object, and furthermore, the decomposed gas generated by the plasma treatment is removed. is efficiently exhausted from the plasma space. The shape of the gas outlet of the gas introduction pipe should be a long slit or one with many small holes. This is preferable because a stable treatment effect can be obtained. Organic materials such as plastic can be used as the material for the gas introduction piping, but in order to use it stably over a long length, metals that are chemically stable, have high plasma resistance, and can withstand high temperatures, such as stainless steel pipes, Steel pipes, aluminum pipes, glass pipes, etc. are preferable.

The degree of vacuum in the ion plating processing space is usually 10-”
lorr or less, preferably 10-"torr or less. If the pressure in other spaces in the reaction vessel is high and it is necessary to maintain the degree of vacuum in the ion plating processing space, it is preferable to provide a sealing mechanism. The vapor deposition heat source is heating with a nichrome wire, usually 100 V or higher, preferably 8-()=0- This voltage accelerates the ionized particles in the plasma and collides with the sample surface to form a thin film. is ionized and accelerated, resulting in a high film-forming state and film-forming strength.Substances used for ion plating include metals such as gold, silver, zinc, copper, and aluminum, various existing organic compounds, and various inorganic compounds. Any gas that can be equally deposited can be used depending on the purpose. Gases for plasma generation in ion plating include Nz, Hx,
Clz, Ar, He.

Non-polymerizable gases such as H□0 and C) [,,C! H,,C4
A polymerizable gas such as H6 can be used. Since it is possible to create a film of a compound with the vapor-deposited metal depending on the type of gas and conditions, it is possible to form a thin film with higher functionality than with vacuum evaporation, plasma CVD, or plasma polymerization. The power source for plasma generation can be DC, AC, or high frequency power, but high frequency is superior in terms of ease of plasma generation, uniformity, stability, etc. Also, for plasma generation!
As shown in FIG. 5, various types of electrodes can be used, such as a flat plate electrode, a ring-shaped electric rod, and a coil-shaped electrode.

It is preferable to perform the ion plating treatment after the plasma treatment because the adhesion of the vapor deposited film is stronger.It is even more preferable to carry out plasma polymerization after the ion plating treatment to form a protective film for the vapor deposited film. In the device of the present invention,
For example, there is a great advantage that the above-mentioned plasma treatment → ion plating treatment → plasma polymerization can be performed continuously in the same apparatus without ever having to be taken out of the vacuum. It also has great advantages over conventional devices, such as the ability to arbitrarily change the processing order by changing the arrangement and the order in which the objects are passed through.

In the plasma processing space, non-polymerizable gas such as O2, N
z, A r, C0XIC! The method uses low-temperature gas plasma such as to form irregularities and various functional groups on the surface of the treated object and activate it. Also, in the plasma polymerization book, polymerizable gases such as CHa, Cz H&, C2Hm are used.

A plasma-polymerized film of these monomers is formed on the surface of the treated object by low-temperature gas plasma of C, H&, MMA, MA, etc.

Guide roller 20 for running continuous processed materials
．． The material for 21.22 is preferably a metal, ceramic, metal-coated ceramic, or rubber coating such as NBR or silicone, which has less etching property than the treated material and has excellent heat resistance.It is also better for the roller to be grounded. good.

The surface of the roller is designed to prevent the processed material from slipping.
It is preferable to have some unevenness rather than perfect smoothness. More preferably, for running stability of the processed material and prevention of heating,
Silicone rubber, NBR rubber.

It is preferable to use a rubber coating such as SBR rubber or fluororubber, or a rubber tube.

Below, preferred embodiments of the device of the present invention will be summarized.

(A) The apparatus according to claim 1, wherein the non-grounded electrode in the plasma processing space is flat.

(b) The apparatus according to claim 1, wherein the non-grounded electrode in the plasma processing space has a convex shape.

(I→ The apparatus according to claim 1, wherein the non-grounded electrode in the plasma processing space has a concave shape.

2) The apparatus according to claim 1, wherein the ungrounded electric bridge and the grounded electrode in the plasma processing space face each other at an equal distance.

(e) The degree of vacuum in the ion plating processing space is 10
2. The device according to claim 1, wherein the device has a temperature of less than -"torr.

(v) The apparatus according to claim 1, wherein the ion plating processing space is separated from other spaces by a roller seal type or labyrinth type seal.

(Effects of the Invention) The apparatus according to the present invention can perform plasma treatment, plasma polymerization, ion plating treatment, etc. all at once and continuously without letting the processed material out of the system, and if necessary, It can be carried out sequentially, and is extremely useful for increasing the functionality and adding value of films, sheets, membranes, fabrics, fiber structures, etc.

In addition, ungrounded electric bridges are arranged radially from the power introduction section installed in the center of the plasma processing and plasma polymerization space, which is extremely effective in stabilizing and uniformizing the plasma and increasing the efficiency of power.

[Brief explanation of the drawing]

Claims (1)

[Claims] 1) At least a plurality of ungrounded electrodes in a vacuum container,
A plasma processing apparatus having a grounded electrode facing the non-grounded electrode, a guiding means for passing the processed material between the non-grounded electrode and the grounded electrode, and a power introduction part disposed in the center of the non-grounded electrode group. A plasma processing/ion plating processing apparatus characterized in that the non-grounded electrode is connected to the power introduction part and is arranged radially outward, and has an ion plating processing space.