JPH02121276A - Manufacture of storage battery - Google Patents

Abstract

PURPOSE:To make it possible to form a photo-charging member simply by forming an amorphous silicon membrane on a collector at the cathode side of a sheet-form storage battery, and forming a p/n connection of a polycrystal silicon on the silicon membrane. CONSTITUTION:On the upper collector 101 of a sheet-form storage battery 100, an intrinsic amorphous silicon membrane 106 is formed by an electric plating, and over the silicon membrane 106, a light is radiated to heat while letting flow an impure gas to form a p-type semiconductor membrane, to convert from the amorphous silicon 106 to a polycrystal p-type silicon membrane 107. The light is radiated to heat again while letting flow an impure gas to form an n-type semiconductor membrane on the p-type silicon membrane 107, to convert the surface layer of the p-type silicon membrane into the n-type silicon membrane 108. By receiving the radiation of light to the photo-charging member 200 formed in the p/n connection, an electromotive force is generated. Consequently, the photo-charging member 200 can be formed in a large area by a simple wet process.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing a storage battery capable of producing 1U of light.

[Prior Art] When charging a conventional storage battery, an adapter between the external power source and the storage battery was used to charge the battery using an external power source.

[Problems to be Solved by the Invention] However, the frequency of use of storage batteries is not constant, and therefore the frequency of charging is also irregular. Therefore, when using a portable device equipped with a storage battery, it may be necessary to charge the storage battery in a place where a charging power source and an adapter are not available, and in such cases, there is a problem that the portable device becomes unusable from then on. .

The present invention was made in order to solve the above-mentioned problems, and an object of the present invention is to provide a method for manufacturing a self-chargeable storage battery that does not require special charging equipment.

[Means for Solving the Problems] In order to achieve this object, the present invention includes the steps of: forming an intrinsic amorphous silicon film on the current collector on the anode side of a sheet storage battery by electroplating; A step of changing the intrinsic amorphous silicon to a polycrystalline n-type silicon film by irradiating light and heating while flowing an impurity gas for forming a p-type semiconductor film on the silicon film; A step of changing the surface layer of the n-type silicon film into an n-type silicon film by irradiating light and heating again while flowing an impurity gas for forming an n-type semiconductor film on the n-type silicon film. including.

[Function] With this method, a polycrystalline silicon p/n junction is formed on the current collector on the anode side, and when the p/n junction is irradiated with light, an electromotive force is generated at the p/n junction. A storage battery can be charged by the electromotive force generated by the shiso.

[Example] Hereinafter, an example embodying the present invention will be described with reference to the drawings.

As shown in FIG. 2, the sheet battery 100 includes a lower current collector 105 at the bottom layer, and further includes a lower current collector 105.
a cathode section 104 disposed above the cathode section 104;
an electrolyte section 103 disposed above the electrolyte section 103;
3 and the anode section 102 disposed above the anode section 3.
and an upper current collector 101 disposed above the current collector 2.

The lower current collector 105 is made of copper (Cu) metal foil. The cathode section 104 is made of lithium (Li) or lithium aluminum alloy (Li-AI) metal foil. The electrolyte section 103 is made of a solid polymer electrolyte. The anode portion 102 is made of a composite material (synthesized resin and inorganic powder) such as palladium oxide (60°). The lower current collector 101 is made of nickel (Ni) metal foil.

Above the sheet-like battery 100 configured as described above, there is a front-light type part 200 that allows the sheet-like battery 100 to be charged.
is formed, and the process of forming it will be explained below.

First, since the first light mold part 200 is formed by electroplating, the lower current collector 1 is made of copper (Cu).
Temporarily seal 05.

Next, on the upper current collector 101 of the sheet battery 100 shown in FIG. 1(a), a thickness of 0.5 [
In order to form an intrinsic amorphous silicon (Si) film 106 on the order of [μm], the upper current collector 1
After pre-degreasing the surface of 01, the sheet battery 100 is immersed in an organic solvent containing a silicon compound as shown in Table TS1, and silicon (Si) is electrodeposited. Then, blue intrinsic amorphous is precipitated.

Table 1 Acetic acid 60 m ISi
(OC2H6) 4 4ml tetramethylammonium fluoride 2g acetone
2ml temperature 20℃
Current density 0.5 mA/c4 Next, the sheet battery 100 on which the amorphous silicon film 106 shown in FIG. In order to form a p-type semiconductor film in the atmosphere, an impurity gas of boron bromide (BBr3) is passed. Then, when the silicon coating 106 is irradiated with a laser beam or a halogen lamp for several seconds and heated to about 900°C, bromine (B) is converted into silicon (
The annealing effect (annealing from 900° C.) causes silicon (Si) to become polycrystalline.

As a result, a polycrystalline p-type silicon limb film 107 is formed, as shown in FIG. 1(C).

Next, polycrystalline p-type silicon (
The sheet storage battery 100 on which the Si) coating 107 is formed is placed in a reducing atmosphere (for example, a hydrogen gas atmosphere), and an impurity gas of phosphorus hydride (PH3) is added to the reducing atmosphere to form an n-type semiconductor coating. flow. Then, the polycrystalline p-type silicon film 107 is irradiated with a laser beam or a halogen lamp for several seconds and heated to about 900°C to heat the surface layer of the p-type silicon film 107 and diffuse phosphorus (P). do. In this way, Figure 1(d)
As shown in FIG. 1, a polycrystalline n-type silicon layer 108 is formed on the surface layer of the p-type silicon layer 107, and the upper current collector 101
A polycrystalline silicon p/n junction is formed on top. When such a method is used, a p/n junction of thin film silicon is easily formed on the upper current collector 101.

Finally, as shown in FIG. 1(e), a surface electrode 109 made of aluminum or the like is formed, and an anti-reflection film 110 is formed on the amorphous n-type silicon 1111i108 to a thickness of 600 Å using the pale blue method or coating method. '~700A'
(7) Apply nia oxide +)-1> (S i 02 ). This anti-reflection film 110 is formed to prevent specular reflection on the amorphous n-type silicon film 108 and improve the efficiency of light incidence.

In the sheet battery 100 having the forward-lighting part 200 formed as described above, as shown in FIG. 2, an electrical quality 1=:
If the electrical connection is made via j 13o, the load 13
Current flows through 0 and it is used as a storage battery. Furthermore, when an electrical connection is made between the surface electrode 109 and the lower electrode part 105, the front-light type part 200 formed by the p/n junction generates an electromotive force when irradiated with light, and the electromotive force is generated. The electromotive force charges the sheet electrode 100.

Note that the present invention is not limited to the above-mentioned embodiments,
Various other modifications are possible. For example, as shown in FIG. 3, a plurality of forward-lighting parts 302 are formed on a sheet storage battery 300 in which an insulating film 301 is formed of a spin cord or the like, and a silver paste 303 or the like is formed. They are connected in series, and a part of the leading edge film 301 is removed by etching or the like to form a front light type part 304.
Needless to say, if it is connected in series with the forward light type part 302, the storage battery can be charged with any electromotive force.

Alternatively, a plurality of amorphous p/n junctions may be formed in the membrane surface direction on the sheet-like storage battery so that the storage battery can be charged with an arbitrary electromotive force.

〔Effect of the invention〕

As is clear from the detailed description above, according to the present invention, a forward-lighting type part having an amorphous silicon p/n junction on a current collector as a charging source for a sheet storage battery can be produced by a simple wet method at low cost. It can be formed over a large area, eliminating the need for adapters and chargers for portable devices.

[Brief explanation of the drawing]

FIGS. 1(a) to 1(e) are diagrams showing the process of forming a storage battery according to an embodiment of the present invention, FIG. 2 is a perspective view of the storage battery according to the embodiment, and FIG. 3 is a diagram showing other steps. FIG. In the figure, 100 is a sheet battery, 101 is a lower current collector, 1
02 is an anode part, 103 is an electrolyte part, 104 is a cathode part, 1
05 is a lower current collector, 106 is an amorphous p-type silicon film, 107 is a p-type silicon layer, 108 is an n-type silicon layer, and 109 is a surface electrode. Figure 2 Figure

Claims (1)

[Scope of Claims] 1. A method for directly forming a photocharging part on a sheet storage battery that can charge the storage battery by irradiating light, the method comprising: directly forming a photocharging part on a current collector on the anode side of the sheet storage battery by electroplating; A step of forming an intrinsic amorphous silicon film, and a step of forming a multilayer film from the intrinsic amorphous silicon by irradiating light and heating while flowing an impurity gas to form a p-type semiconductor film on the silicon film. A step of converting the p-type silicon film into a crystalline p-type silicon film, and irradiating the p-type silicon film with light and heating while flowing an impurity gas to form an n-type semiconductor film on the p-type silicon film. The surface layer of n
1. A method for manufacturing a storage battery, comprising the step of converting it into a molded silicon film.