JPH02119010A - Insulation film - Google Patents
Insulation filmInfo
- Publication number
- JPH02119010A JPH02119010A JP27216988A JP27216988A JPH02119010A JP H02119010 A JPH02119010 A JP H02119010A JP 27216988 A JP27216988 A JP 27216988A JP 27216988 A JP27216988 A JP 27216988A JP H02119010 A JPH02119010 A JP H02119010A
- Authority
- JP
- Japan
- Prior art keywords
- alicyclic
- solution
- insulating film
- polyamic acid
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009413 insulation Methods 0.000 title abstract description 6
- -1 alkylamine salt Chemical class 0.000 claims abstract description 64
- 125000002723 alicyclic group Chemical group 0.000 claims abstract description 40
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 29
- 239000002253 acid Substances 0.000 claims abstract description 23
- 229920001721 polyimide Polymers 0.000 claims description 23
- 239000004642 Polyimide Substances 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 abstract description 24
- 230000010220 ion permeability Effects 0.000 abstract description 3
- 239000002798 polar solvent Substances 0.000 abstract description 2
- 239000004952 Polyamide Substances 0.000 abstract 3
- 229920002647 polyamide Polymers 0.000 abstract 3
- 238000004321 preservation Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 58
- 239000000243 solution Substances 0.000 description 28
- 239000010410 layer Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- 150000004985 diamines Chemical class 0.000 description 12
- 239000003960 organic solvent Substances 0.000 description 10
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 9
- 150000007513 acids Chemical class 0.000 description 7
- 230000001186 cumulative effect Effects 0.000 description 7
- 239000012024 dehydrating agents Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 150000003973 alkyl amines Chemical class 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 3
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- PLZVEHJLHYMBBY-UHFFFAOYSA-N Tetradecylamine Chemical compound CCCCCCCCCCCCCCN PLZVEHJLHYMBBY-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- NAPSCFZYZVSQHF-UHFFFAOYSA-N dimantine Chemical compound CCCCCCCCCCCCCCCCCCN(C)C NAPSCFZYZVSQHF-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- HKUFIYBZNQSHQS-UHFFFAOYSA-N n-octadecyloctadecan-1-amine Chemical compound CCCCCCCCCCCCCCCCCCNCCCCCCCCCCCCCCCCCC HKUFIYBZNQSHQS-UHFFFAOYSA-N 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- QAEDZJGFFMLHHQ-UHFFFAOYSA-N trifluoroacetic anhydride Chemical compound FC(F)(F)C(=O)OC(=O)C(F)(F)F QAEDZJGFFMLHHQ-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- KJDRSWPQXHESDQ-UHFFFAOYSA-N 1,4-dichlorobutane Chemical compound ClCCCCCl KJDRSWPQXHESDQ-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- JPZYXGPCHFZBHO-UHFFFAOYSA-N 1-aminopentadecane Chemical compound CCCCCCCCCCCCCCCN JPZYXGPCHFZBHO-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- UCHNVSDXSPIKRG-UHFFFAOYSA-N 1-methoxy-3-(3-methoxyphenyl)benzene Chemical group COC1=CC=CC(C=2C=C(OC)C=CC=2)=C1 UCHNVSDXSPIKRG-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- AKCRQHGQIJBRMN-UHFFFAOYSA-N 2-chloroaniline Chemical compound NC1=CC=CC=C1Cl AKCRQHGQIJBRMN-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- MILSYCKGLDDVLM-UHFFFAOYSA-N 2-phenylpropan-2-ylbenzene Chemical class C=1C=CC=CC=1C(C)(C)C1=CC=CC=C1 MILSYCKGLDDVLM-UHFFFAOYSA-N 0.000 description 1
- JEAQJTYJUMGUCD-UHFFFAOYSA-N 3,4,5-triphenylphthalic acid Chemical compound C=1C=CC=CC=1C=1C(C=2C=CC=CC=2)=C(C(O)=O)C(C(=O)O)=CC=1C1=CC=CC=C1 JEAQJTYJUMGUCD-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- RHRNYXVSZLSRRP-UHFFFAOYSA-N 3-(carboxymethyl)cyclopentane-1,2,4-tricarboxylic acid Chemical class OC(=O)CC1C(C(O)=O)CC(C(O)=O)C1C(O)=O RHRNYXVSZLSRRP-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- UDKYPBUWOIPGDY-UHFFFAOYSA-N 3-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=CC(N)=C1 UDKYPBUWOIPGDY-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- HSBOCPVKJMBWTF-UHFFFAOYSA-N 4-[1-(4-aminophenyl)ethyl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)C1=CC=C(N)C=C1 HSBOCPVKJMBWTF-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- KIFDSGGWDIVQGN-UHFFFAOYSA-N 4-[9-(4-aminophenyl)fluoren-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 KIFDSGGWDIVQGN-UHFFFAOYSA-N 0.000 description 1
- DJBNFYNWQPBYLY-UHFFFAOYSA-N 5-(2,5-dioxooxolan-3-yl)-3-methylcyclohex-2-ene-1,1-dicarboxylic acid Chemical class C1C(C)=CC(C(O)=O)(C(O)=O)CC1C1C(=O)OC(=O)C1 DJBNFYNWQPBYLY-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- XBPCUCUWBYBCDP-UHFFFAOYSA-N Dicyclohexylamine Chemical compound C1CCCCC1NC1CCCCC1 XBPCUCUWBYBCDP-UHFFFAOYSA-N 0.000 description 1
- WJYIASZWHGOTOU-UHFFFAOYSA-N Heptylamine Chemical compound CCCCCCCN WJYIASZWHGOTOU-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- KMCMODAVNVQVIE-UHFFFAOYSA-N O=[PH2]C1=CC=CC=C1.OC(=O)C1=CC=CC=C1C(O)=O.OC(=O)C1=CC=CC=C1C(O)=O Chemical class O=[PH2]C1=CC=CC=C1.OC(=O)C1=CC=CC=C1C(O)=O.OC(=O)C1=CC=CC=C1C(O)=O KMCMODAVNVQVIE-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 150000001243 acetic acids Chemical class 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- HOPRXXXSABQWAV-UHFFFAOYSA-N anhydrous collidine Natural products CC1=CC=NC(C)=C1C HOPRXXXSABQWAV-UHFFFAOYSA-N 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- NOWBCCCXVKRUCT-UHFFFAOYSA-N bicyclo[2.2.1]heptane-2,3,5-tricarboxylic acid Chemical compound C1C2C(C(=O)O)CC1C(C(O)=O)C2C(O)=O NOWBCCCXVKRUCT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- NAJAZZSIKSSBGH-UHFFFAOYSA-N butane-1,1,1,2-tetracarboxylic acid Chemical class CCC(C(O)=O)C(C(O)=O)(C(O)=O)C(O)=O NAJAZZSIKSSBGH-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- UTBIMNXEDGNJFE-UHFFFAOYSA-N collidine Natural products CC1=CC=C(C)C(C)=N1 UTBIMNXEDGNJFE-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- HPYNZHMRTTWQTB-UHFFFAOYSA-N dimethylpyridine Natural products CC1=CC=CN=C1C HPYNZHMRTTWQTB-UHFFFAOYSA-N 0.000 description 1
- LAWOZCWGWDVVSG-UHFFFAOYSA-N dioctylamine Chemical compound CCCCCCCCNCCCCCCCC LAWOZCWGWDVVSG-UHFFFAOYSA-N 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical class C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 1
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical class C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- OPJJZAOJBTWQCY-UHFFFAOYSA-N henicosan-1-amine Chemical compound CCCCCCCCCCCCCCCCCCCCCN OPJJZAOJBTWQCY-UHFFFAOYSA-N 0.000 description 1
- KAJZYANLDWUIES-UHFFFAOYSA-N heptadecan-1-amine Chemical compound CCCCCCCCCCCCCCCCCN KAJZYANLDWUIES-UHFFFAOYSA-N 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- BUHXFUSLEBPCEB-UHFFFAOYSA-N icosan-1-amine Chemical compound CCCCCCCCCCCCCCCCCCCCN BUHXFUSLEBPCEB-UHFFFAOYSA-N 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- YWWNNLPSZSEZNZ-UHFFFAOYSA-N n,n-dimethyldecan-1-amine Chemical compound CCCCCCCCCCN(C)C YWWNNLPSZSEZNZ-UHFFFAOYSA-N 0.000 description 1
- YWFWDNVOPHGWMX-UHFFFAOYSA-N n,n-dimethyldodecan-1-amine Chemical compound CCCCCCCCCCCCN(C)C YWFWDNVOPHGWMX-UHFFFAOYSA-N 0.000 description 1
- NHLUVTZJQOJKCC-UHFFFAOYSA-N n,n-dimethylhexadecan-1-amine Chemical compound CCCCCCCCCCCCCCCCN(C)C NHLUVTZJQOJKCC-UHFFFAOYSA-N 0.000 description 1
- UQKAOOAFEFCDGT-UHFFFAOYSA-N n,n-dimethyloctan-1-amine Chemical compound CCCCCCCCN(C)C UQKAOOAFEFCDGT-UHFFFAOYSA-N 0.000 description 1
- SFBHPFQSSDCYSL-UHFFFAOYSA-N n,n-dimethyltetradecan-1-amine Chemical compound CCCCCCCCCCCCCCN(C)C SFBHPFQSSDCYSL-UHFFFAOYSA-N 0.000 description 1
- MJCJUDJQDGGKOX-UHFFFAOYSA-N n-dodecyldodecan-1-amine Chemical compound CCCCCCCCCCCCNCCCCCCCCCCCC MJCJUDJQDGGKOX-UHFFFAOYSA-N 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- IKVDMBQGHZVMRN-UHFFFAOYSA-N n-methyldecan-1-amine Chemical compound CCCCCCCCCCNC IKVDMBQGHZVMRN-UHFFFAOYSA-N 0.000 description 1
- OMEMQVZNTDHENJ-UHFFFAOYSA-N n-methyldodecan-1-amine Chemical compound CCCCCCCCCCCCNC OMEMQVZNTDHENJ-UHFFFAOYSA-N 0.000 description 1
- IHFXMTOFDQKABX-UHFFFAOYSA-N n-methylhexadecan-1-amine Chemical compound CCCCCCCCCCCCCCCCNC IHFXMTOFDQKABX-UHFFFAOYSA-N 0.000 description 1
- SEGJNMCIMOLEDM-UHFFFAOYSA-N n-methyloctan-1-amine Chemical compound CCCCCCCCNC SEGJNMCIMOLEDM-UHFFFAOYSA-N 0.000 description 1
- QWERMLCFPMTLTG-UHFFFAOYSA-N n-methyltetradecan-1-amine Chemical compound CCCCCCCCCCCCCCNC QWERMLCFPMTLTG-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical class OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- INAMEDPXUAWNKL-UHFFFAOYSA-N nonadecan-1-amine Chemical compound CCCCCCCCCCCCCCCCCCCN INAMEDPXUAWNKL-UHFFFAOYSA-N 0.000 description 1
- FJDUDHYHRVPMJZ-UHFFFAOYSA-N nonan-1-amine Chemical compound CCCCCCCCCN FJDUDHYHRVPMJZ-UHFFFAOYSA-N 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- GFYHSKONPJXCDE-UHFFFAOYSA-N sym-collidine Natural products CC1=CN=C(C)C(C)=C1 GFYHSKONPJXCDE-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- ABVVEAHYODGCLZ-UHFFFAOYSA-N tridecan-1-amine Chemical compound CCCCCCCCCCCCCN ABVVEAHYODGCLZ-UHFFFAOYSA-N 0.000 description 1
- QFKMMXYLAPZKIB-UHFFFAOYSA-N undecan-1-amine Chemical compound CCCCCCCCCCCN QFKMMXYLAPZKIB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Organic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
本発明は絶縁膜に関し、特に耐熱性、電気絶縁性、耐イ
オン透過性および保存安定性に優れ、かつピンホールの
ない有機膜からなる電気および電子素子として好適な絶
縁膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an insulating film, particularly an electrical insulating film made of an organic film that has excellent heat resistance, electrical insulation, ion permeation resistance, and storage stability, and has no pinholes. The present invention also relates to an insulating film suitable as an electronic device.
[従来の技術]
従来、電気または電子素子に用いられる耐熱性を有する
絶縁膜として、芳香族テトラカルボン酸二無水物と芳香
族ジアミンとを反応させた芳香族系ポリアミック酸溶液
を、配線を含む基板上に塗布した後、高温で加熱して形
成させたポリイミド膜が用いられてきた。[Prior Art] Conventionally, an aromatic polyamic acid solution prepared by reacting an aromatic tetracarboxylic dianhydride and an aromatic diamine has been used as a heat-resistant insulating film used in electric or electronic devices, including wiring. Polyimide films that are formed by coating on a substrate and then heating at high temperatures have been used.
[発明が解決しようとする課題]
しかし、前記従来の芳香族系ポリアミック酸は、溶液中
の水分の影響を大きく受け、そのため水分の存在により
溶液の保存安定性が低下し、また該溶液を塗布後、イミ
ド化して形成されるポリイミド膜にピンホールが生じ、
良好な絶縁膜を得るのは困難であった。[Problems to be Solved by the Invention] However, the conventional aromatic polyamic acids are greatly affected by moisture in the solution, and as a result, the storage stability of the solution decreases due to the presence of moisture, and it is difficult to apply the solution. After that, pinholes occur in the polyimide film formed by imidization,
It was difficult to obtain a good insulating film.
そこで、本発明の目的は前記問題点を解決し、保存安定
性に優れ、また耐熱性、電気絶縁性および耐イオン透過
性に優れた、ピンホールのない有機膜からなる絶縁膜を
提供することにある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-mentioned problems and provide an insulating film made of an organic film without pinholes, which has excellent storage stability, heat resistance, electrical insulation properties, and ion permeation resistance. It is in.
[課題を解決するための手段]
本発明は、脂環式系ポリイミドまたは脂環式系ポリアミ
ック酸もしくは該アミック酸のアルキルアミン塩(以下
、これらを「脂環式系ポリイミド類」という)を溶解し
てなる含水率が0.001〜15重量%・である溶液を
用いて形成した有機膜からなる絶縁膜を提供するもので
ある。[Means for Solving the Problems] The present invention provides solutions for dissolving alicyclic polyimides, alicyclic polyamic acids, or alkylamine salts of the amic acids (hereinafter referred to as "alicyclic polyimides"). The present invention provides an insulating film made of an organic film formed using a solution having a water content of 0.001 to 15% by weight.
本発明に用いられる脂環式系ポリイミド類とは、脂環式
テトラカルボン酸類とジアミンとを有機溶媒中で反応さ
せてなる脂環式系ポリアミック酸、該アミック酸と長鎖
アルキルアミン化合物とを反応させて得られる該アミッ
ク酸のアルキルアミン塩、さらに該アミック酸および該
アミック酸のアルキルアミン塩をイミド化した脂環式系
ポリイミドを含むものである。The alicyclic polyimide used in the present invention refers to an alicyclic polyamic acid obtained by reacting an alicyclic tetracarboxylic acid with a diamine in an organic solvent, or an alicyclic polyamic acid obtained by reacting an alicyclic tetracarboxylic acid with a diamine, and a long-chain alkylamine compound with the amic acid. It contains an alkylamine salt of the amic acid obtained by the reaction, and an alicyclic polyimide obtained by imidizing the amic acid and the alkylamine salt of the amic acid.
なお、本発明で用いるテトラカルボン酸類とは、テトラ
カルボン酸、テトラカルボン酸−無水物、テトラカルボ
ン酸二無水物、テトラカルボン酸モノアルキルエステル
、テトラカルボン酸ジアルキルエステル、テトラカルボ
ン酸トリアルキルエステル、およびテトラカルボン酸テ
トラアルキルエステルを表すものである。Note that the tetracarboxylic acids used in the present invention include tetracarboxylic acid, tetracarboxylic acid anhydride, tetracarboxylic dianhydride, tetracarboxylic acid monoalkyl ester, tetracarboxylic acid dialkyl ester, tetracarboxylic acid trialkyl ester, and tetracarboxylic acid tetraalkyl ester.
かかるテトラカルボン酸類としては、1,2゜3.4.
−シクロブタンテトラカルボン酸類、1゜2.3.4−
シクロペンタンテトラカルボン酸類、2.3.5−トリ
カルボキシシクロペンチル酢酸類、3,5.6−トリカ
ルボキシ−ノルボルナン2−酢酸類、5− (2,5−
ジオキソテトラヒドロフリル)−3−メチル−シクロヘ
キセンジカルボン酸類、ビシクロ(2,、2,2)−オ
クト−7−ニンーテトラカルボン酸類、1. 2. 3
.4−フランテトラカルボン酸類、3.3’ 、4゜4
′ −パーフルオロイソプロピリデンテトラカルボン酸
類などの脂環式テトラカルボン酸類を挙げることができ
る。これらのテトラカルボン酸類のうち、特に好ましい
ものとしては、2,3.5トリカルボキシシクロペンチ
ル酢酸類、1,2゜3.4−シクロペンテンテトラカル
ボン酸類を挙げることができる。Such tetracarboxylic acids include 1,2°3.4.
-Cyclobutanetetracarboxylic acids, 1°2.3.4-
Cyclopentanetetracarboxylic acids, 2.3.5-tricarboxycyclopentyl acetic acids, 3,5.6-tricarboxy-norbornane 2-acetic acids, 5- (2,5-
dioxotetrahydrofuryl)-3-methyl-cyclohexenedicarboxylic acids, bicyclo(2,,2,2)-oct-7-nin-tetracarboxylic acids, 1. 2. 3
.. 4-furantetracarboxylic acids, 3.3', 4゜4
Examples include alicyclic tetracarboxylic acids such as -perfluoroisopropylidene tetracarboxylic acids. Among these tetracarboxylic acids, particularly preferred are 2,3.5 tricarboxycyclopentyl acetic acids and 1,2°3,4-cyclopentenetetracarboxylic acids.
また、本発明においては、前記脂環式テトラカルボン酸
類に、ブタンテトラカルボン酸類、4゜4′−ビス(3
,4−ジカルボキシフェノキシ)ジフェニルスルフィド
類、4.4’−ビス(3゜4−ジカルボキシフェノキシ
)ジフェニルスルホン類、4.4′−ビス(3,4−ジ
カルボキシフェノキシ)ジフェニルプロパン類、3.3
’ 、4゜4′−パーフルオロイソプロピリデンテトラ
カルボン酸類、3.3’ 、4.4’ −ビフェニルエ
ーテルテトラカルボン酸類、ビス(フタル酸)フェニル
ホスフィンオキサイド類、p−フェニレン−ビス−(ト
リフェニルフタル酸)類、m−フ二二しンービス−(ト
リフェニルフタル酸)類、ビス(トリフェニルフタル酸
)−4,4’ −ジフェニルエーテル類、ビス(トリフ
ェニルフタル酸)4.4′−ジフェニルメタン、ピロメ
リット酸類、3.3’ 、4.4’ −ベンゾフェノン
テトラカルボン酸類、3.3’ 、4.4’ −ビフェ
ニルスルホンテトラカルボン酸類、1.4. 5.8−
ナフタレンテトラカルボン酸類、2,3,6.7−ナフ
タレンテトラカルボン酸類、3.3’、4゜4′−ビフ
ェニルエーテルテトラカルボン酸類、3.3’ 、4.
4’ −ジメチルジフェニルシランテトラカルボン酸類
、3.3’ 、4.4’ −テトラフェニルシランテト
ラカルボン酸類などの脂肪族または芳香族テトラカルボ
ン酸類を併用することができる。これらの脂肪族または
芳香族テトラカルボン酸類の併用割合は、前記脂環式テ
トラカルボン酸類に対して、通常、50モル%以下、好
ましくは20モル%以下である。In the present invention, the alicyclic tetracarboxylic acids include butanetetracarboxylic acids, 4゜4'-bis(3
, 4-dicarboxyphenoxy) diphenyl sulfides, 4.4'-bis(3゜4-dicarboxyphenoxy) diphenyl sulfones, 4.4'-bis(3,4-dicarboxyphenoxy) diphenylpropanes, 3 .3
', 4゜4'-perfluoroisopropylidene tetracarboxylic acids, 3.3', 4.4'-biphenyl ether tetracarboxylic acids, bis(phthalic acid) phenylphosphine oxides, p-phenylene-bis-(triphenyl phthalic acids), m-phinidine-bis-(triphenylphthalic acid), bis(triphenylphthalic acid)-4,4'-diphenyl ethers, bis(triphenylphthalic acid) 4,4'-diphenylmethane , pyromellitic acids, 3.3', 4.4'-benzophenonetetracarboxylic acids, 3.3', 4.4'-biphenylsulfonetetracarboxylic acids, 1.4. 5.8-
Naphthalenetetracarboxylic acids, 2,3,6.7-naphthalenetetracarboxylic acids, 3.3', 4゜4'-biphenylethertetracarboxylic acids, 3.3', 4.
Aliphatic or aromatic tetracarboxylic acids such as 4'-dimethyldiphenylsilane tetracarboxylic acids and 3.3', 4.4'-tetraphenylsilane tetracarboxylic acids can be used in combination. The proportion of these aliphatic or aromatic tetracarboxylic acids used in combination is usually 50 mol% or less, preferably 20 mol% or less, based on the alicyclic tetracarboxylic acids.
また、前記ジアミンとしては、パラフェニレンジアミン
、メタフェニレンジアミン、4,4′ジアミノジフエニ
ルメタン、4.4′ −ジアミノジフェニルエタン、ベ
ンジジン、4.4’ −ジアミノジフェニルスルフィド
、4,4′ −ジアミノジフェニルスルホン、4.4’
−ジアミノジフェニルエーテル、1.5−ジアミノナ
フタレン、3゜3′−ジメチル−4,4′ −ジアミノ
ビフェニル、3.4′−ジアミノベンズアニリド、3,
4′ジアミノジフエニルエーテル、3.3’ −ジアミ
ノベンゾフェノン、3.4’ −ジアミノベンゾフェノ
ン、4.4’−ジアミノベンゾフェノン、2゜2−ビス
(4−(4−アミノフェノキシ)フェニル〕プロパン、
ビス(1−(4−アミノフェノキシ)フェニル〕スルホ
ン、1,4−ビス(4−アミノフェノキシ)ベンゼン、
1,3−ビス(4−アミノフェノキシ)ベンゼン、1,
3−ビス(3アミノフエノキシ)ベンゼン、9,9−ビ
ス(4−アミノフェニル)−10−ヒドロ−アンスラセ
ン、9.9−ビス(4−アミノフェニル)フルオレン、
4.4’−メチレン−ビス(2−クロロアニリン)、2
.2’、5.5’ −テトラクロロ−4,4′−ジアミ
ノビフェニル、2,2′ジクロロ−4,4−ジアミノ−
5,5′ −ジメトキシビフェニル、3.3’−ジメト
キシ−4゜4′ −ジアミノビフェニルなどの芳香族ジ
アミン、1.1′−メタキシリレンジアミン、1,3−
プロパンジアミン、テトラメチレンジアミン、ペンタメ
チレンジアミン、ヘキサメチレンジアミン、ヘプタメチ
レンジアミン、オクタメチレンジアミン、ノナメチレン
ジアミン、4.4’ −ジメチルへブタメチレンジアミ
ン、1.4−ジアミノシクロヘキサン、イソホロンジア
ミン、テトラヒドロジシクロペンタジエニレンジアミン
、ヘキサヒドロ−4,7−メタノインダニレンシメチレ
ンジアミン、トリシクロ(6,2,1,02・7)−ラ
ンデシレンジメチルジアミンなどの脂肪族または脂環式
ジアミン、および
RI R1
H2N−(CH2) −3i−(0−3N (C
H2) −NH2m
n mRI R1
(式中、R1は炭素数1〜12のメチル基、エチル基、
プロピル基などのアルキル基、シクロヘキシル基などの
脂環式基、またはフェニル基などの芳香族基、mは1〜
3の整数、nは1〜2oの整数を示す。)
などで示されるジアミノオルガノシロキサンを挙げるこ
とができる。The diamines include para-phenylene diamine, meta-phenylene diamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ethane, benzidine, 4,4'-diaminodiphenyl sulfide, 4,4'-diamino Diphenylsulfone, 4.4'
-diaminodiphenyl ether, 1,5-diaminonaphthalene, 3゜3'-dimethyl-4,4'-diaminobiphenyl, 3,4'-diaminobenzanilide, 3,
4'-diaminodiphenyl ether, 3.3'-diaminobenzophenone, 3.4'-diaminobenzophenone, 4.4'-diaminobenzophenone, 2°2-bis(4-(4-aminophenoxy)phenyl)propane,
Bis(1-(4-aminophenoxy)phenyl)sulfone, 1,4-bis(4-aminophenoxy)benzene,
1,3-bis(4-aminophenoxy)benzene, 1,
3-bis(3-aminophenoxy)benzene, 9,9-bis(4-aminophenyl)-10-hydro-anthracene, 9,9-bis(4-aminophenyl)fluorene,
4.4'-methylene-bis(2-chloroaniline), 2
.. 2',5,5'-tetrachloro-4,4'-diaminobiphenyl, 2,2'dichloro-4,4-diamino-
Aromatic diamines such as 5,5'-dimethoxybiphenyl, 3,3'-dimethoxy-4゜4'-diaminobiphenyl, 1,1'-methaxylylene diamine, 1,3-
Propanediamine, tetramethylene diamine, pentamethylene diamine, hexamethylene diamine, heptamethylene diamine, octamethylene diamine, nonamethylene diamine, 4,4'-dimethylhebutamethylene diamine, 1,4-diaminocyclohexane, isophorone diamine, tetrahydrodiamine Aliphatic or cycloaliphatic diamines such as cyclopentadienylene diamine, hexahydro-4,7-methanoindanilene shimethylene diamine, tricyclo(6,2,1,02.7)-landecylene dimethyldiamine, and RI R1 H2N-(CH2)-3i-(0-3N (C
H2) -NH2m
n mRI R1 (wherein, R1 is a methyl group having 1 to 12 carbon atoms, an ethyl group,
Alkyl group such as propyl group, alicyclic group such as cyclohexyl group, or aromatic group such as phenyl group, m is 1 to
An integer of 3, n represents an integer of 1 to 2o. ) and the like are diaminoorganosiloxanes.
また、ジアミンの使用割合は、テトラカルボン酸類1モ
ルに対して、通常、0.5〜2モル、好ましくは0.8
〜1.3モルである。The proportion of diamine used is usually 0.5 to 2 mol, preferably 0.8 mol, per 1 mol of tetracarboxylic acids.
~1.3 mol.
テトラカルボン酸類とジアミンとの反応は、従来から知
られた方法により有機溶媒中で行う。The reaction between the tetracarboxylic acids and the diamine is carried out in an organic solvent by a conventionally known method.
ここにおける有機溶媒としては、得られる脂環式系ポリ
アミック酸を溶解させるものであれば特に制限はなく、
例えばN−メチル−2−ピロリドン、N、N−ジメチル
アセトアミド、N、N−ジメチルホルムアミド、ジメチ
ルスルホキシド、γ−ブチロラクトン、テトラメチル尿
素、ビス(メトキシエチル)エーテル、テトラヒドロフ
ラン、クロロホルム、1.4−ジオキサンなどを挙げる
ことができる。The organic solvent here is not particularly limited as long as it can dissolve the alicyclic polyamic acid obtained.
For example, N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethylsulfoxide, γ-butyrolactone, tetramethylurea, bis(methoxyethyl)ether, tetrahydrofuran, chloroform, 1,4-dioxane. etc. can be mentioned.
なお、この場合の有機溶媒には、そのほか一般的有機溶
媒であるエーテル類、ハロゲン化炭化水素類、炭化水素
類、例えばアセトン、メチルエチルケトン、メチルイソ
ブチルケトン、シクロヘキサノン、酢酸メチル、酢酸エ
チル、酢酸ブチル、シュウ酸ジエチル、マロン酸ジエチ
ル、ジエチルエーテル、エチレングリコールジメチルエ
ーテル、エチレングリコールエチルエーテルアセテート
、ジエチレングリコールジメチルエーテル、ジクロルメ
タン、1,2−ジクロルエタン、1,4−ジクロルブタ
ン、トリクロルエタン、クロルベンゼン、0−ジクロル
ベンゼン、ヘキサン、ヘプタン、オクタン、ベンゼン、
トルエン、キシレンなども、脂環式系ポリアミック酸を
析出させない程度に混合することができる。In addition, the organic solvent in this case includes general organic solvents such as ethers, halogenated hydrocarbons, hydrocarbons such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, Diethyl oxalate, diethyl malonate, diethyl ether, ethylene glycol dimethyl ether, ethylene glycol ethyl ether acetate, diethylene glycol dimethyl ether, dichloromethane, 1,2-dichloroethane, 1,4-dichlorobutane, trichloroethane, chlorobenzene, 0-dichlorobenzene, hexane, heptane, octane, benzene,
Toluene, xylene, etc. can also be mixed to the extent that alicyclic polyamic acid is not precipitated.
この有機溶媒の使用量は特に制限はないが、固形分濃度
が、通常、0.1〜30重量%となるような量である。The amount of this organic solvent to be used is not particularly limited, but the amount is such that the solid content concentration is usually 0.1 to 30% by weight.
また、テトラカルボン酸類とジアミンとの反応は、通常
、0〜150℃、好ましくは0〜80°Cで行う。Moreover, the reaction between tetracarboxylic acids and diamines is usually carried out at 0 to 150°C, preferably at 0 to 80°C.
また、本発明に用いる脂環式系ポリイミドは、前記によ
り得られた脂環式系ポリアミック酸を、例えば脱水剤と
塩基性触媒とにより、前記と同様の有機溶媒中で脱水閉
環させることによって合成される。ここで、脱水剤とし
ては、無水酢酸、無水プロピオン酸、無水トリフルオロ
酢酸などの酸無水物を用いることができる。また、塩基
性触媒としては特に限定されるものではないが、ピリジ
ン、コリジン、ルチジン、トリエチルアミンなどの3級
アミンを用いることができる。Furthermore, the alicyclic polyimide used in the present invention is synthesized by dehydrating and ring-closing the alicyclic polyamic acid obtained above in the same organic solvent as above using, for example, a dehydrating agent and a basic catalyst. be done. Here, as the dehydrating agent, acid anhydrides such as acetic anhydride, propionic anhydride, and trifluoroacetic anhydride can be used. Furthermore, the basic catalyst is not particularly limited, but tertiary amines such as pyridine, collidine, lutidine, and triethylamine can be used.
前記脱水剤の使用量は、脂環式系ポリアミック酸の脱水
閉環する結合量の0.8〜lO等量であり、前記塩基性
触媒の使用量は、溶解する有機溶媒中で使用する脱水剤
の0.5〜10等量であり、反応温度は、通常、0〜1
80℃である。The amount of the dehydrating agent used is 0.8 to 1O equivalent to the amount of bonds to be dehydrated and ring-closed in the alicyclic polyamic acid, and the amount of the basic catalyst used is the amount of the dehydrating agent used in the organic solvent in which the alicyclic polyamic acid is dissolved. 0.5 to 10 equivalents, and the reaction temperature is usually 0 to 1
The temperature is 80°C.
このようにして得られた脂環式系ポリイミドの溶液は、
通常、反応に用いたのと同じ有機溶媒を用いて、固形分
濃度が0.05〜20重量%、好ましくは1〜15重量
%の溶液に調製して用いられる。The alicyclic polyimide solution obtained in this way is
Usually, the same organic solvent used in the reaction is used to prepare a solution having a solid content concentration of 0.05 to 20% by weight, preferably 1 to 15% by weight.
本発明に用いる脂環式系ポリアミック酸アルキルアミン
塩は、前記により得られた脂環式系ポリアミック酸と長
鎖アルキルアミン化合物との反応で製造される。The alicyclic polyamic acid alkylamine salt used in the present invention is produced by reacting the alicyclic polyamic acid obtained above with a long-chain alkylamine compound.
この長鎖アルキルアミン化合物は、下記式:(ここで、
R2は高級アルキル基、好ましくは成膜性が良好である
点で、炭素原子数6〜30、さらに好ましくは炭素原子
数10〜25のアルキル基であり、R3およびR4は同
一でも異なってもよく、水素原子または置換もしくは非
置換の炭素数1〜6の炭化水素基である。)
で表されるアミン化合物である。上記R2の高級アルキ
ル基としては、n−アミル基、n−ヘキシル基、n−ヘ
プチル基、n−オクチル基、n−ノニル基、n−デシル
基、n−ウンデシル基、n−ドデシル基、n−トリデシ
ル基、n−テトラデシル基、n−ペンタデシル基、n−
ヘキサデシル基、n−ヘプタデシル基、n−オクタデシ
ル基、n−ノナデシル基、n−エイコシル基、n−へニ
コシル基、n−トコシル基、n−トリデシル基、n −
テトラデシル基、n−トリアコンチル基などを挙げるこ
とができる。上記R3およびR4の炭化水素基としては
、メチル基、プロピル基、ペンチル基などのアルキル基
、シクロヘキシル基などの脂環式基などを挙げることが
できる。This long-chain alkylamine compound has the following formula: (where,
R2 is a higher alkyl group, preferably an alkyl group having 6 to 30 carbon atoms, more preferably 10 to 25 carbon atoms, in view of good film forming properties, and R3 and R4 may be the same or different. , a hydrogen atom or a substituted or unsubstituted hydrocarbon group having 1 to 6 carbon atoms. ) is an amine compound represented by Examples of the higher alkyl group for R2 include n-amyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group, n-dodecyl group, n- -tridecyl group, n-tetradecyl group, n-pentadecyl group, n-
Hexadecyl group, n-heptadecyl group, n-octadecyl group, n-nonadecyl group, n-eicosyl group, n-henicosyl group, n-tocosyl group, n-tridecyl group, n-
Examples include a tetradecyl group and an n-triacontyl group. Examples of the hydrocarbon groups for R3 and R4 include alkyl groups such as methyl, propyl and pentyl groups, and alicyclic groups such as cyclohexyl.
」−2長鎖アルキルアミン化合物の具体例としては、n
−アミルアミン、n−ヘキシルアミン、nヘプチルアミ
ン、n−オクチルアミン、n−ノニルアミン、n−デシ
ルアミン、n−ウンデシルアミン、n−ドデシルアミン
、n−トリデシルアミン、n−テトラデシルアミン、n
−ペンタデシルアミン、n−ヘキサデシルアミン、n−
ヘプタデシルアミン、n−オクタデシルアミン、n−ノ
ナデシルアミン、n−エイコシルアミン、n−へニコシ
ルアミン、n−トコジルアミン、n−テトラデシルアミ
ン、n−1リアコンチルアミン、シクロヘキシルアミン
などの第一級アミン;N−メチル−n−オクチルアミン
、N−メチル−n−デシルアミン、N−メチル−n−ド
デシルアミン、N−メチル−n−テトラデシルアミン、
N−メチル−n−ヘキサデシルアミン、N−n−オクタ
デシルアミン、ジシクロヘキシルアミン、ジオクチルア
ミン、ジドデシルアミン、ジオクタデシルアミン、ジオ
クタデシルアミンなどの第二級アミン;N、N−ジメチ
ルオクチルアミン、N、N−ジメチル−n−デシルアミ
ン、N、N−ジメチル−n−ドデシルアミン、N、N−
ジメチル−n−テトラデシルアミン、N、N−ジメチル
−n−ヘキサデシルアミン、N、N−ジメチル−n−オ
クタデシルアミン、N、N−ジメチル−〇−エイコシル
アミンおよびN、N−ジメチル−n−トコジルアミンな
どの第三級アミンを挙げることができる。”-2 Specific examples of long-chain alkylamine compounds include n
-amylamine, n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine, n-undecylamine, n-dodecylamine, n-tridecylamine, n-tetradecylamine, n
-pentadecylamine, n-hexadecylamine, n-
Primary amines such as heptadecylamine, n-octadecylamine, n-nonadecylamine, n-eicosylamine, n-henicosylamine, n-tocodylamine, n-tetradecylamine, n-1 liacontylamine, cyclohexylamine; N-methyl-n-octylamine, N-methyl-n-decylamine, N-methyl-n-dodecylamine, N-methyl-n-tetradecylamine,
Secondary amines such as N-methyl-n-hexadecylamine, N-n-octadecylamine, dicyclohexylamine, dioctylamine, didodecylamine, dioctadecylamine, dioctadecylamine; N,N-dimethyloctylamine, N , N-dimethyl-n-decylamine, N,N-dimethyl-n-dodecylamine, N,N-
Dimethyl-n-tetradecylamine, N,N-dimethyl-n-hexadecylamine, N,N-dimethyl-n-octadecylamine, N,N-dimethyl-〇-eicosylamine and N,N-dimethyl-n - Tertiary amines such as tocodylamine may be mentioned.
良好な絶縁膜を得るためには、炭素数が1〜30のアル
キルアミンまたは芳香族アミン化合物を用いることが好
ましく、さらに炭素数が3〜20のアルキルアミンまた
は芳香族アミン化合物を用いることが好ましい。In order to obtain a good insulating film, it is preferable to use an alkylamine or aromatic amine compound having 1 to 30 carbon atoms, and more preferably an alkylamine or aromatic amine compound having 3 to 20 carbon atoms. .
上記脂環式系ポリアミック酸と長鎖アルキルアミン化合
物との反応は、該アミック酸を製造した後、得られる反
応生成物を含む反応液に長鎖アルキルアミン化合物をそ
のまま、または脂環式系ポリアミック酸の合成に用いる
ことができる有機溶媒に溶解させた長鎖アルキルアミン
化合物の溶液を混合することにより行うことができる。The reaction between the alicyclic polyamic acid and the long-chain alkylamine compound can be carried out by adding the long-chain alkylamine compound as it is or adding the long-chain alkylamine compound to the reaction solution containing the resulting reaction product after producing the amic acid, or This can be carried out by mixing a solution of a long-chain alkylamine compound dissolved in an organic solvent that can be used for acid synthesis.
この反応は、通常、0〜150℃、好ましくは0〜60
℃で行うことができる。This reaction is usually carried out at 0 to 150°C, preferably at 0 to 60°C.
Can be done at ℃.
この反応において、長鎖アルキルアミン化合物の使用量
は、通常、該アミック酸分子における繰り返し単位1モ
ルに対して0. 5〜5モル、好ましくは0. 5〜3
モルである。長鎖アルキルアミン化合物の使用量が、該
アミック酸分子の繰り返し単位に対して少な過ぎたり、
多過ぎると成膜性および絶縁性の高いポリイミド膜を形
成することができない。In this reaction, the amount of the long-chain alkylamine compound used is usually 0.00% per mole of repeating unit in the amic acid molecule. 5-5 mol, preferably 0. 5-3
It is a mole. The amount of the long-chain alkylamine compound used is too small relative to the repeating unit of the amic acid molecule,
If the amount is too large, a polyimide film with high film formability and insulation properties cannot be formed.
このようにして得られた脂環式系ポリアミック酸アルキ
ルアミン塩を含む反応液は、反応に用いたのと同じ溶媒
を用いて、通常、濃度0.1〜10mmol/1、好ま
しくは0. 2〜6a+mol/1程度の溶液に調製し
て用いられる。The reaction solution containing the alicyclic polyamic acid alkylamine salt obtained in this way is prepared using the same solvent as used in the reaction, and usually has a concentration of 0.1 to 10 mmol/1, preferably 0.1 to 10 mmol/1. It is used after preparing a solution of about 2 to 6a+mol/1.
なお、本発明に用いられるポリマーの固有粘度η1nh
(濃度0.5g/100m1、溶媒N、 N−ジメチル
アセトアミド、測定温度30℃)は、好ましくは0.0
5=ie/g以上、特に好ましくは0゜05〜20濯/
gである。In addition, the intrinsic viscosity η1nh of the polymer used in the present invention
(concentration 0.5g/100ml, solvent N, N-dimethylacetamide, measurement temperature 30°C) is preferably 0.0
5=ie/g or more, particularly preferably 0.05 to 20 ir/g
It is g.
以上のようにして得られた脂環式系ポリイミド類の溶液
は、含水率が0.001〜15重量%、好ましくは0.
005〜10重量%である。含水率を0.001重量%
未満に減らすことは、使用する溶媒が極性溶媒のため工
業的に困難であり、また含水率が15重量%を超えると
、使用する溶媒によってポリイミドが析出したり、基板
への塗布性が低下する。The alicyclic polyimide solution obtained as described above has a water content of 0.001 to 15% by weight, preferably 0.001 to 15% by weight.
0.005 to 10% by weight. Moisture content 0.001% by weight
It is industrially difficult to reduce the moisture content to less than 15% by weight because the solvent used is a polar solvent, and if the moisture content exceeds 15% by weight, polyimide may precipitate depending on the solvent used or the applicability to the substrate may deteriorate. .
本発明の有機膜は、前記脂環式系ポリイミド類の溶液を
塗布および乾燥して形成されるが、好ましくは前記で得
られた脂環式系ポリアミック酸アルキルアミン塩を用い
て、以下に説明するラングミュア・プロジェット法によ
り形成する。The organic film of the present invention is formed by applying and drying a solution of the alicyclic polyimide, and preferably using the alicyclic polyamic acid alkylamine salt obtained above, as described below. It is formed by the Langmuir-Prodgett method.
まず、脂環式系ポリアミック酸アルキルアミン塩の溶液
を水面上に注ぎ、水面上に該アミック酸アルキルアミン
塩の単分子層を形成する。次に、該アミック酸アルキル
アミン塩の単分子層が形成された表面圧を、通常、5〜
40dyn/cm、好ましくは10〜35 dyn/c
mに保ちながら単分子層を形成した水面上に、基板を水
面に対して任意の角度で浸漬し、一定速度、通常、0.
5〜100mm/111n s好ましくは1〜30 m
m/m1rrの速度で上下に引き上げ、および引き下げ
を繰り返すことにより、該基板の表面上に該アミック酸
アルキルアミン塩の単分子層または単分子層の累積膜を
形成させる。形成される単分子層の累積数は、基板の引
き上げ回数を適宜選択することにより、所望のものとす
ることができる。該アミック酸アルキルアミン塩からな
る単分子層または単分子層の累積膜は、本発明の絶縁膜
として好適に機能するためには、単分子層が、通常、1
〜400回、好ましくは2〜300回程度累積した膜と
するのがよい。First, a solution of an alicyclic polyamic acid alkylamine salt is poured onto the water surface to form a monomolecular layer of the amic acid alkylamine salt on the water surface. Next, the surface pressure at which the monomolecular layer of the amic acid alkylamine salt is formed is usually set to 5 to 5.
40 dyn/cm, preferably 10-35 dyn/c
The substrate is immersed onto the water surface on which a monomolecular layer has been formed while maintaining the temperature at a constant speed, usually 0.
5-100mm/111ns preferably 1-30m
A monomolecular layer or a cumulative film of monomolecular layers of the amic acid alkylamine salt is formed on the surface of the substrate by repeating lifting and lowering at a speed of m/mlrr. The cumulative number of monomolecular layers formed can be made as desired by appropriately selecting the number of times the substrate is lifted. In order for a monomolecular layer or a cumulative film of monomolecular layers made of the amic acid alkylamine salt to suitably function as an insulating film of the present invention, the monomolecular layer usually has a thickness of 1.
It is preferable to obtain a film that has been applied approximately 400 times, preferably 2 to 300 times.
単分子層の累積回数が多過ぎると絶縁膜の形成に長時間
を必要とし、素子の生産性が低下する。If the number of times the monomolecular layer is accumulated is too large, it will take a long time to form the insulating film, and the productivity of the device will decrease.
以上のようにして基板上に形成された脂環式系ポリアミ
ック酸アルキルアミン塩の単分子層または単分子層の累
積膜は、通常、40〜250℃、好ましくは100〜2
00℃で乾燥させることにより、本発明の有機膜を得る
ことができる。The monomolecular layer or cumulative film of monomolecular layers of the alicyclic polyamic acid alkylamine salt formed on the substrate as described above is usually heated at 40 to 250°C, preferably at 100 to 250°C.
The organic film of the present invention can be obtained by drying at 00°C.
また、本発明の有機膜は、単分子層または単分子層の累
積膜の形成後、脱水剤および触媒の混合溶液あるいは脱
水剤と触媒をそれぞれ単独に溶解してなる溶液に、有機
膜を形成した基板を順次浸漬した後加熱することにより
、脂環式系ポリアミック酸アルキルアミン塩を閉環させ
てポリイミド膜としてもよい。脱水剤および触媒として
は、前記脂環式系ポリアミック酸をイミド化した際に用
いたのと同じものを挙げることができる。In addition, the organic film of the present invention can be formed by forming an organic film in a mixed solution of a dehydrating agent and a catalyst or in a solution obtained by dissolving the dehydrating agent and the catalyst individually after forming a monomolecular layer or a cumulative film of monomolecular layers. By sequentially immersing and heating the substrates, the alicyclic polyamic acid alkylamine salt may be ring-closed to form a polyimide film. As the dehydrating agent and the catalyst, the same ones used when imidizing the alicyclic polyamic acid can be mentioned.
脂環式系ポリアミック酸アルキルアミン塩を閉環させる
ための加熱温度は、通常、0〜200℃、好ましくは0
〜150℃である。The heating temperature for ring-closing the alicyclic polyamic acid alkylamine salt is usually 0 to 200°C, preferably 0°C.
~150°C.
また、本発明の有機膜は、前記脂環式系ポリイミド類の
溶液を用いて一般的な塗布および乾燥によって形成され
てもよい。Further, the organic film of the present invention may be formed by general coating and drying using a solution of the alicyclic polyimide.
本発明に用いられる脂環式系ポリイミド類の溶液を用い
て形成した有機膜からなる絶縁膜を用いた電気および電
子素子は、例えば次の方法によって製造することができ
る。Electrical and electronic devices using an insulating film made of an organic film formed using a solution of alicyclic polyimide used in the present invention can be manufactured, for example, by the following method.
まず、金属または半導体を有する基板上に、脂環式系ポ
リイミド類の溶液をロールコータ−法、スピンナー法、
印刷法などで塗布し、有機膜を形成させ、この有機膜を
80〜200℃、好ましくは120〜200℃の温度で
5〜180分間、好ましくは30〜90分間乾燥する。First, a solution of alicyclic polyimide is applied onto a substrate containing a metal or a semiconductor using a roll coater method, a spinner method, or a spinner method.
It is applied by a printing method or the like to form an organic film, and this organic film is dried at a temperature of 80 to 200°C, preferably 120 to 200°C, for 5 to 180 minutes, preferably 30 to 90 minutes.
この有機膜の乾燥後の厚さは、通常、0.01〜1μm
1好ましくは0.01〜0.5μmである。The thickness of this organic film after drying is usually 0.01 to 1 μm.
1 preferably 0.01 to 0.5 μm.
なお、脂環式系ポリイミド類の溶液を塗布するに際し、
必要に応じて基板と有機膜との接着性をさらに良好にす
るために、基板上にあらかじめシランカップリング剤、
チタンカップリング剤などを塗布することもできる。In addition, when applying a solution of alicyclic polyimide,
If necessary, in order to further improve the adhesion between the substrate and the organic film, apply a silane coupling agent or
It is also possible to apply a titanium coupling agent or the like.
本発明の絶縁膜を有する電気および電子素子に用いられ
る基板としては、アルミナ、石英、フロートガラス、ソ
ーダガラスや可撓性のポリエチレンテレフタレート、ポ
リエチレンテレフタレートなどのポリエステルフィルム
、さらにはポリエーテルスルホン、ポリカーボネート、
その他のプラスチックフィルムなどからなる透明基板を
用いることができ、また、これら基板上に金属薄膜を形
成した基板、金属性の基板、S 1SGaAs。Substrates used in electrical and electronic devices having the insulating film of the present invention include alumina, quartz, float glass, soda glass, flexible polyester films such as polyethylene terephthalate, polyethylene terephthalate, polyether sulfone, polycarbonate, etc.
Transparent substrates made of other plastic films can be used, and substrates with metal thin films formed on these substrates, metallic substrates, and S1SGaAs.
ZnS、Zn5eSCdSのような半導体、BaTiO
3やL 1NbO3のような強誘電体製基板などが挙げ
られる。さらに、これら基板上に金属薄膜が用途に応じ
て配線化されていてもよい。Semiconductors such as ZnS, Zn5eSCdS, BaTiO
Examples include ferroelectric substrates such as 3 and L1NbO3. Furthermore, metal thin films may be wired on these substrates depending on the purpose.
次に、本発明の絶縁膜を用いる電気および電子素子とし
ては、例えば化合物半導体上に本発明の絶縁膜を形成し
、その上に金属電極を作った金属電極/絶縁膜/半導体
構造が挙げられ、光電変換素子やLEDなどの発光素子
などに用いられる。Next, electric and electronic devices using the insulating film of the present invention include, for example, a metal electrode/insulating film/semiconductor structure in which the insulating film of the present invention is formed on a compound semiconductor and a metal electrode is formed thereon. , used in photoelectric conversion elements and light emitting elements such as LEDs.
また、金属電極/絶縁膜/半導体構造と同様に半導体基
板上に絶縁膜を形成し、その上に2個以上の素子を形成
した構造は、CCD (Charge−coupled
devices)のような電荷移動型素子に用いられ
る。次に、絶縁基板または半導体基板上に金属電極、絶
縁膜、金属電極の順に重ね合わせた構造は、トランジス
ターやキャパシターとして用いることができる。さらに
、液晶配向膜などに用いられる絶縁膜/金属電極構造の
素子としても用いられる。Furthermore, similar to the metal electrode/insulating film/semiconductor structure, a structure in which an insulating film is formed on a semiconductor substrate and two or more elements are formed on it is a CCD (Charge-coupled
It is used in charge transfer type devices such as devices. Next, a structure in which a metal electrode, an insulating film, and a metal electrode are stacked in this order on an insulating substrate or a semiconductor substrate can be used as a transistor or a capacitor. Furthermore, it can also be used as an element with an insulating film/metal electrode structure used in liquid crystal alignment films and the like.
[実 施 例]
以下、実施例を挙げ本発明をさらに具体的に説明するが
、本発明はこれらの実施例に制限されるものではない。[Examples] Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.
実施例
N、N−ジメチルアセトアミド/ベンゼン(50150
、体積比)混合液に、2,3.5−トリカルボキシシク
ロペンチル酢酸二無水物と4゜4′−ジアミノジフェニ
ルエーテルから合成した脂環式系ポリアミック酸を溶解
して濃度1 mmol/2の溶液を調製した。この溶液
に、上記と同一の混合液にN、 N−ジメチル−n−オ
クタデシルアミンを溶解してなる濃度1 mmol/
Q溶液を、このジアミンが該アミック酸の繰り返し単位
1モルに対して2倍モルになるように混合し、さらに水
を添加して脂環式系ポリアミック酸アルキルアミン塩溶
液を調製した。この溶液の含水率は5重量%である。こ
の溶液を水槽に満たしたイオン交換水(25°C)上に
注ぎ、水槽中の表面圧を25dyn/cmに保ちながら
、基板を水面に対して4511に浸漬し、上下に移動さ
せて単分子層が10層からなる単分子層の累積膜を基板
の表面上に形成した。Example N, N-dimethylacetamide/benzene (50150
, volume ratio) in the mixed solution was dissolved an alicyclic polyamic acid synthesized from 2,3.5-tricarboxycyclopentyl acetic dianhydride and 4゜4'-diaminodiphenyl ether to make a solution with a concentration of 1 mmol/2. Prepared. In this solution, a concentration of 1 mmol/N,N-dimethyl-n-octadecylamine was dissolved in the same mixture as above.
The Q solution was mixed so that the diamine was twice the molar amount per mole of the repeating unit of the amic acid, and water was further added to prepare an alicyclic polyamic acid alkylamine salt solution. The water content of this solution is 5% by weight. This solution was poured onto ion-exchanged water (25°C) filled in a water tank, and while maintaining the surface pressure in the water tank at 25 dyn/cm, the substrate was immersed at an angle of 4511 with respect to the water surface and moved up and down to form single molecules. A monolayer cumulative film consisting of 10 layers was formed on the surface of the substrate.
使用した基板は、直径5mmの円型グラッシーカーボン
電極である。基板の引き上げ速度は5mm/minで行
い、累積膜形成後に、ピリジン/無水酢酸/ベンゼン(
1: 1 : 3重量比)の混合溶液に24時間浸漬し
、反応温度10〜30°Cでイミド化を行った。ピリジ
ン/無水酢酸/ベンゼンで処理してイミド化をさせる前
の有機膜のIRスペクトルは、波数2800〜3000
cm−’にC−H伸縮振動に帰属される強い吸収を示し
たが、処理後の膜はこの吸収を完全に消失していたこと
から、イミド化が生じポリイミドの有機膜が形成されて
いることを確認した。The substrate used was a circular glassy carbon electrode with a diameter of 5 mm. The substrate was pulled up at a rate of 5 mm/min, and after the cumulative film was formed, pyridine/acetic anhydride/benzene (
1:1:3 weight ratio) for 24 hours, and imidization was performed at a reaction temperature of 10 to 30°C. The IR spectrum of the organic film before imidization by treatment with pyridine/acetic anhydride/benzene has a wavenumber of 2800 to 3000.
cm-' showed a strong absorption attributed to C-H stretching vibration, but this absorption completely disappeared in the film after treatment, indicating that imidization occurred and an organic film of polyimide was formed. It was confirmed.
こうして形成した有機膜からなる絶縁膜を用いて得られ
た金属電極/絶縁膜構造の素子を一方の電極に用い、1
mMK4 [Fe (CN)6] −0゜1MKCl水
溶液中で、サイクリックポルタンメトリーを用いてイオ
ンの酸化還元反応を調べたところ、図1に示すように電
極間に流れる電流は観察されず、本発明のポリイミド膜
が、高い耐イオン透過性を有することが示された。An element having a metal electrode/insulating film structure obtained using the insulating film made of an organic film thus formed was used as one electrode, and 1
mMK4 [Fe (CN)6] -0゜When the redox reaction of ions was investigated using cyclic portammetry in a 1M KCl aqueous solution, no current flowing between the electrodes was observed, as shown in Figure 1. It was shown that the polyimide membrane of the present invention has high ion permeability.
次に、アルミニウム金属電極/絶縁膜構造の絶縁膜上に
、金の蒸着法で直径5mmの電極を形成し、金属電極/
絶縁膜/金属電極構造の素子を形成し、金属−金属間の
電気抵抗値を調べたところ、体積固有抵抗として101
8Ω・em以上という値が得られ、本発明の絶縁膜が絶
縁性に優れていることを示した。Next, an electrode with a diameter of 5 mm is formed on the insulating film of the aluminum metal electrode/insulating film structure by gold vapor deposition, and the metal electrode/insulating film is
When an element with an insulating film/metal electrode structure was formed and the electrical resistance value between metals was examined, the volume resistivity was 101.
A value of 8Ω·em or more was obtained, indicating that the insulating film of the present invention has excellent insulation properties.
また、同様な方法で製造したポリイミドの示差熱熱量計
で測定した熱分解開始温度は430℃を示し、本発明の
絶縁膜が耐熱性に優れていることを示した。Further, the thermal decomposition initiation temperature of polyimide produced in the same manner as measured with a differential thermal calorimeter was 430° C., indicating that the insulating film of the present invention has excellent heat resistance.
比較例
実施例に用いたポリアミック酸の代わりに、ピロメリッ
ト酸二無水物と4,4′−ジアミノジフェニルエーテル
から合成したポリアミック酸を用い、実施例と同様にポ
リアミック酸アルキルアミン塩の溶液を調製した。この
溶液の含水率は0゜1重量%である。得られたポリアミ
ック酸アルキルアミン塩の溶液を用いて、実施例と同様
にポリイミド膜を形成させた。Comparative Example Instead of the polyamic acid used in the example, a polyamic acid synthesized from pyromellitic dianhydride and 4,4'-diaminodiphenyl ether was used to prepare a solution of polyamic acid alkylamine salt in the same manner as in the example. . The water content of this solution is 0.1% by weight. Using the obtained solution of polyamic acid alkylamine salt, a polyimide film was formed in the same manner as in the example.
次に、前記ポリイミド膜を用いて実施例と同様に金属電
極/絶縁膜構造の素子を作製し、1mMK4 [Fe
(CN) 6コー0.1MKCl水溶液中でサイクリ
ックポルタンメトリーを用いてイオンの酸化還元反応を
調べたところ、5μAの電流値が観察され、イオンが透
過していることが示された。Next, an element with a metal electrode/insulating film structure was fabricated using the polyimide film in the same manner as in the example, and 1mMK4 [Fe
(CN) When the redox reaction of ions was investigated using cyclic portammetry in a 6-0.1 M KCl aqueous solution, a current value of 5 μA was observed, indicating that ions were permeating.
[発明の効果]
本発明の絶縁膜は、耐熱性、電気絶縁性、耐イオン透過
性および保存安定性に優れた、ピンホールのない有機膜
からなるために信頼性の高い絶縁膜を有する電気および
電子素子に有用である。[Effects of the Invention] The insulating film of the present invention is made of an organic film with no pinholes and has excellent heat resistance, electrical insulation, ion permeation resistance, and storage stability. and useful in electronic devices.
図1は、実施例に示した金属電極/絶縁膜構造の電極を
用いたサイクリックポルタンメトリーの結果を示すもの
であり、横軸は印加電圧、縦軸は電極間に流れる電流値
を示す。
特許出願人 日本合成ゴム株式会社Figure 1 shows the results of cyclic portammetry using the metal electrode/insulating film structure electrode shown in the example, where the horizontal axis shows the applied voltage and the vertical axis shows the current value flowing between the electrodes. . Patent applicant: Japan Synthetic Rubber Co., Ltd.
Claims (1)
くは該アミック酸のアルキルアミン塩を溶解してなる含
水率が0.001〜15重量%である溶液を用いて形成
した有機膜からなる絶縁膜。An insulating film made of an organic film formed using a solution containing an alicyclic polyimide, an alicyclic polyamic acid, or an alkylamine salt of the amic acid and having a water content of 0.001 to 15% by weight.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27216988A JPH02119010A (en) | 1988-10-28 | 1988-10-28 | Insulation film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27216988A JPH02119010A (en) | 1988-10-28 | 1988-10-28 | Insulation film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02119010A true JPH02119010A (en) | 1990-05-07 |
Family
ID=17510035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27216988A Pending JPH02119010A (en) | 1988-10-28 | 1988-10-28 | Insulation film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02119010A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015111542A1 (en) * | 2014-01-27 | 2015-07-30 | 富士フイルム株式会社 | Microstructure, multilayer wiring board, semiconductor package and microstructure manufacturing method |
-
1988
- 1988-10-28 JP JP27216988A patent/JPH02119010A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015111542A1 (en) * | 2014-01-27 | 2015-07-30 | 富士フイルム株式会社 | Microstructure, multilayer wiring board, semiconductor package and microstructure manufacturing method |
JP6084709B2 (en) * | 2014-01-27 | 2017-02-22 | 富士フイルム株式会社 | MICROSTRUCTURE, MULTILAYER WIRING BOARD, SEMICONDUCTOR PACKAGE, AND MICROSTRUCTURE MANUFACTURING METHOD |
JPWO2015111542A1 (en) * | 2014-01-27 | 2017-03-23 | 富士フイルム株式会社 | MICROSTRUCTURE, MULTILAYER WIRING BOARD, SEMICONDUCTOR PACKAGE, AND MICROSTRUCTURE MANUFACTURING METHOD |
US9799594B2 (en) | 2014-01-27 | 2017-10-24 | Fujifilm Corporation | Microstructure, multilayer wiring board, semiconductor package and microstructure manufacturing method |
TWI642068B (en) * | 2014-01-27 | 2018-11-21 | 富士軟片股份有限公司 | Microstructure, multilayer wiring substrate, semiconductor package and microstructure production method |
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