JPH0211796Y2 - - Google Patents

Info

Publication number
JPH0211796Y2
JPH0211796Y2 JP1982069969U JP6996982U JPH0211796Y2 JP H0211796 Y2 JPH0211796 Y2 JP H0211796Y2 JP 1982069969 U JP1982069969 U JP 1982069969U JP 6996982 U JP6996982 U JP 6996982U JP H0211796 Y2 JPH0211796 Y2 JP H0211796Y2
Authority
JP
Japan
Prior art keywords
bimorph
piezoelectric ceramic
tip
plate
thermal expansion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982069969U
Other languages
Japanese (ja)
Other versions
JPS58173260U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6996982U priority Critical patent/JPS58173260U/en
Publication of JPS58173260U publication Critical patent/JPS58173260U/en
Application granted granted Critical
Publication of JPH0211796Y2 publication Critical patent/JPH0211796Y2/ja
Granted legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案はVTR用、光通信用等のバイモルフに
係り、圧電磁器よりなるバイモルフの、金属ベー
ス台への取付け絶縁材料として、前記バイモルフ
と熱膨張係数が等しい圧電磁器板を接着したこと
を特徴とするものである。
[Detailed description of the invention] The present invention relates to a bimorph for VTR, optical communication, etc., and a piezoelectric ceramic plate having a coefficient of thermal expansion equal to that of the bimorph is used as an insulating material for mounting the bimorph made of piezoelectric ceramic on a metal base. It is characterized by having been glued.

VTR用、光通信用等のバイモルフは、バイモ
ルフの一端を金属ベース台に固定し、バイモルフ
に電界を与えて先端を歪曲し、該歪曲により磁気
ヘツドセンサーの切換、光通路の切換等を制御す
る用途に利用するものであるが、室温の変化によ
つて低温度時には第1図aに誇張して示すように
絶縁板側に反り、高温度時には第1図bに誇張し
て示すようにセンサー側に反つて先端の位置ずれ
になるため、精密な用途への大量使用を阻まれて
いる。しかしバイモルフ自体は室内温度の変化に
よつて先端に位置ずれを来たすほどの温度特性も
ないので、その真因を探究したところ、バイモル
フとこれを金属ベース台に取付ける絶縁板との熱
膨張係数に相違があるためではないかと疑われ
た。
Bimorphs for VTRs, optical communications, etc. are used by fixing one end of the bimorph to a metal base, applying an electric field to the bimorph to distort the tip, and using this distortion to control switching of the magnetic head sensor, switching of the optical path, etc. However, due to room temperature changes, at low temperatures the sensor warps toward the insulating board as shown exaggeratedly in Figure 1a, and at high temperatures the sensor warps as shown exaggeratedly in Figure 1b. This causes the tip to be misaligned against the side, which prevents its mass use in precision applications. However, the bimorph itself does not have temperature characteristics that would cause the tip to shift due to changes in indoor temperature, so when we investigated the real cause, we found that the coefficient of thermal expansion between the bimorph and the insulating plate that attaches it to the metal base. It was suspected that this was due to a discrepancy.

即ち従来はバイモルフと金属ベース板の間に介
在する絶縁材料に専らガラスエポキシ板が使用さ
れて来たが、バイモルフに於ける圧電磁器との熱
膨張係数がかなり違い、測定の結果によつても位
置ずれが明白になつた。本考案はかかる欠点を除
くことを目的とするものである。
In other words, in the past, glass epoxy plates were exclusively used as the insulating material between the bimorph and the metal base plate, but the coefficient of thermal expansion of the bimorph is quite different from that of the piezoelectric ceramic, and measurement results indicate that positional deviations may occur. became clear. The present invention aims to eliminate such drawbacks.

第2〜4図は本考案の一実施例を示したもので
あつて、シム1を挾んで両側に例えばPb(Zr・
Ti)O3等の公知の圧電材料からなる圧電磁器板
2,3を接合し、夫々の表面に焼付銀電極2a,
3aを形成してバイモルフ4とし、一側の銀電極
2a上にセンサー電極5を設け、各電極にリード
線を接続すると共に、銀電極3aの一端部に前記
圧電磁器板2,3と熱膨張係数の等しい例えば上
記圧電磁器からなる絶縁板6を接着する。
Figures 2 to 4 show an embodiment of the present invention, in which a shim 1 is sandwiched between the sides, for example, Pb (Zr,
Piezoelectric ceramic plates 2 and 3 made of a known piezoelectric material such as Ti)O 3 are joined, and baked silver electrodes 2a and
3a to form a bimorph 4, a sensor electrode 5 is provided on one side of the silver electrode 2a, a lead wire is connected to each electrode, and one end of the silver electrode 3a is connected to the piezoelectric ceramic plates 2 and 3 for thermal expansion. Insulating plates 6 made of, for example, the piezoelectric ceramic described above and having the same coefficient are bonded.

前記実施例に準じ、絶縁板6とバイモルフ4の
先端の間の距離を25mmとした実施例品を資料Aと
し、絶縁板だけをガラスエポキシ板として他は同
一にした従来の製品を資料Bとし、資料Aは二個
の資料A1,A2を用い、資料Bは二個の資料B1
B2を用い、0℃→常温→45℃→常温→0℃→常
温と温度変化を繰返して、先端の位置ずれを測定
したところ、第5図の成積を得た。即ち資料Aは
先端の位置ずれが最大で−20〜20μm、その位置
ずれの振幅は最高で40μmであつたが、資料Bは
最大で−40〜80μm、その位置ずれの振幅は最高
で120μmであつて、本考案の優秀性を証明し得
た。
Document A is an example product in which the distance between the insulating plate 6 and the tip of the bimorph 4 is 25 mm according to the above example, and Document B is a conventional product in which only the insulating plate is a glass epoxy plate and the other parts are the same. , Material A uses two materials A 1 and A 2 , and Material B uses two materials B 1 ,
Using B2 , the temperature change was repeated as follows: 0°C → room temperature → 45°C → room temperature → 0°C → room temperature, and the positional deviation of the tip was measured, and the formation shown in FIG. 5 was obtained. That is, in Material A, the maximum misalignment of the tip was -20 to 20 μm, and the maximum amplitude of the misalignment was 40 μm, whereas in Material B, the maximum misalignment was -40 to 80 μm, and the maximum amplitude of the misalignment was 120 μm. In this way, we were able to prove the superiority of the present invention.

本考案は前記実施例により明らかにしたよう
に、金属ベース台(主としてアルミ)への取付絶
縁材として、バイモルフ4に、該バイモルフを構
成する圧電磁器板と熱膨張係数が等しい圧電磁器
板を接着した構成によつて、絶縁板6自体がバイ
モルフ4とは異つた熱伸縮を生ずるのを防止し得
た。
As clarified by the above embodiments, the present invention is to attach a piezoelectric ceramic plate having the same coefficient of thermal expansion as the piezoelectric ceramic plate constituting the bimorph to the bimorph 4 as an insulating material for mounting on a metal base (mainly aluminum). With this configuration, it was possible to prevent the insulating plate 6 itself from undergoing thermal expansion and contraction different from that of the bimorph 4.

【図面の簡単な説明】[Brief explanation of drawings]

第1図a,bはガラスエポキシ板を絶縁板とし
て接着した従来品の室温変化による先端の位置ず
れを例示した側面図、第2〜4図は本考案の一実
施例を示し、第2図は側面図、第3図は平面図、
第4図は裏部平面図である、第5図は本考案に基
く資料Aと従来製品の資料Bとの先端の位置数値
の曲線図である。 2,3……圧電磁器板、4……バイモルフ、6
……絶縁板。
Figures 1a and 1b are side views illustrating the displacement of the tip due to room temperature changes in a conventional product in which a glass epoxy plate is bonded as an insulating plate; Figures 2 to 4 show an embodiment of the present invention; is a side view, Figure 3 is a plan view,
FIG. 4 is a plan view of the back side, and FIG. 5 is a curve diagram of the positional numerical values of the tip of material A based on the present invention and material B of the conventional product. 2, 3...piezoelectric ceramic plate, 4...bimorph, 6
...Insulating board.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 圧電磁器よりなるバイモルフの、金属ベース台
への取付け絶縁材料として、前記バイモルフと熱
膨張係数が等しい圧電磁器板を接着したことを特
徴とするVTR用等のバイモルフ。
1. A bimorph for VTR, etc., characterized in that a piezoelectric ceramic plate having the same coefficient of thermal expansion as the bimorph is adhered as an insulating material for mounting the bimorph made of piezoelectric ceramic on a metal base.
JP6996982U 1982-05-13 1982-05-13 Bimorph for VTR etc. Granted JPS58173260U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6996982U JPS58173260U (en) 1982-05-13 1982-05-13 Bimorph for VTR etc.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6996982U JPS58173260U (en) 1982-05-13 1982-05-13 Bimorph for VTR etc.

Publications (2)

Publication Number Publication Date
JPS58173260U JPS58173260U (en) 1983-11-19
JPH0211796Y2 true JPH0211796Y2 (en) 1990-04-03

Family

ID=30079667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6996982U Granted JPS58173260U (en) 1982-05-13 1982-05-13 Bimorph for VTR etc.

Country Status (1)

Country Link
JP (1) JPS58173260U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478994A (en) * 1977-12-06 1979-06-23 Sony Corp Electric mechanical conversion element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478994A (en) * 1977-12-06 1979-06-23 Sony Corp Electric mechanical conversion element

Also Published As

Publication number Publication date
JPS58173260U (en) 1983-11-19

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