JPH02108346U - - Google Patents

Info

Publication number
JPH02108346U
JPH02108346U JP1989017429U JP1742989U JPH02108346U JP H02108346 U JPH02108346 U JP H02108346U JP 1989017429 U JP1989017429 U JP 1989017429U JP 1742989 U JP1742989 U JP 1742989U JP H02108346 U JPH02108346 U JP H02108346U
Authority
JP
Japan
Prior art keywords
resin
inclined surface
pellet
triac
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1989017429U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989017429U priority Critical patent/JPH02108346U/ja
Publication of JPH02108346U publication Critical patent/JPH02108346U/ja
Pending legal-status Critical Current

Links

Classifications

    • H10W72/0711
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • H10W72/073

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
JP1989017429U 1989-02-16 1989-02-16 Pending JPH02108346U (cg-RX-API-DMAC10.html)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989017429U JPH02108346U (cg-RX-API-DMAC10.html) 1989-02-16 1989-02-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989017429U JPH02108346U (cg-RX-API-DMAC10.html) 1989-02-16 1989-02-16

Publications (1)

Publication Number Publication Date
JPH02108346U true JPH02108346U (cg-RX-API-DMAC10.html) 1990-08-29

Family

ID=31231200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989017429U Pending JPH02108346U (cg-RX-API-DMAC10.html) 1989-02-16 1989-02-16

Country Status (1)

Country Link
JP (1) JPH02108346U (cg-RX-API-DMAC10.html)

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