JPH02106987A - semiconductor laser - Google Patents
semiconductor laserInfo
- Publication number
- JPH02106987A JPH02106987A JP63261871A JP26187188A JPH02106987A JP H02106987 A JPH02106987 A JP H02106987A JP 63261871 A JP63261871 A JP 63261871A JP 26187188 A JP26187188 A JP 26187188A JP H02106987 A JPH02106987 A JP H02106987A
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- semiconductor laser
- disordered
- diffraction grating
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、波長選択用の回折格子を備えた半導体レー
ザに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser equipped with a diffraction grating for wavelength selection.
第３図は例えば従来のＤ Ｂ Ｒ（Ｄｉｓｔｒｉｂｕｔ
ｅｄＢｒａｇｇ Ｒｅｆ！ｅｅｔｏｒ） レーザを示す
断面図である。この図において、１はｎ −Ｇ ａ Ａ
ｓ基板、２はｎ−Ａ ／ Ｇ ａ Ａ ｓクラッド層
、４はｐ −Ａ Ｉ Ｇ ａ Ａ ｓクラッド層、５は
ｐ−ＧａＡｓコンタクト層、９はｐｆ４ｉ、１０はｎ−
電極、１１はＧａＡｓ活性層、１２は回折格子である。FIG. 3 shows, for example, a conventional DBR (Distribute).
edBragg Ref! eetor) is a cross-sectional view showing a laser. In this figure, 1 is n - Ga A
s substrate, 2 is n-A/GaAs cladding layer, 4 is p-AIGaAs cladding layer, 5 is p-GaAs contact layer, 9 is pf4i, 10 is n-
11 is a GaAs active layer, and 12 is a diffraction grating.
次に動作について説明する。Next, the operation will be explained.
ｐ ｆｌＫ 極９ ｐ ｎ電極１０によりダブルへテ［
ｌ構造に順バイアスをかけると、電子および正孔がにａ
Ａｓ活性層１１に注入されて再結合゛により光が生じる
。この光は回折格子１２で選択的に反射さね、反射され
て戻った光の位相が一致することにより回折格子１２の
周期の整数倍の特定の波長について大きな反射率が得ら
れ、単一モードでレーザ発振する。p flK pole 9 p n electrode 10 double hete [
When a forward bias is applied to the l structure, electrons and holes are
Light is generated by injecting As into the active layer 11 and recombining it. This light is selectively reflected by the diffraction grating 12, and by matching the phases of the reflected and returned light, a large reflectance is obtained for a specific wavelength that is an integral multiple of the period of the diffraction grating 12, resulting in a single mode. Laser oscillates.
上記のような従来のＤＢＲレーザは、素子の片側に回折
格子１２を形成する必要があるｔコめ、ウェハ表面に段
差が生じ、ＯＦ、 Ｉ Ｃ化（ζ不向きであった。In the conventional DBR laser as described above, it is necessary to form the diffraction grating 12 on one side of the device, which creates a step on the wafer surface, making it unsuitable for OF, IC (ζ).
この発明は、上記のような問題点を解消す７５ｔ７めに
なされたもので、ＤＢＲ領域を形成するためにウニ八表
面に段差を生じさせることなく、簡単な工程で実現でき
る半導体し〜ザを得ることを目的とする。This invention was made to solve the above-mentioned problems, and it is a semiconductor device that can be realized in a simple process without creating a step on the surface of the DBR region. The purpose is to obtain.
この発明に係る半導体レーザは、量子井戸構造の導波方
向に、周期的に無秩序化された領域を少なくとも２箇所
以上備えたものである。The semiconductor laser according to the present invention has at least two periodically disordered regions in the waveguide direction of the quantum well structure.
乙の発明においては、量子井戸構造の周期的に無秩序化
されて屈折率が低くなった領域と、無秩序化されていな
い領域とから等価的に回折格子が形成される。In the invention of B, a diffraction grating is equivalently formed from regions of the quantum well structure that are periodically disordered and have a low refractive index and regions that are not disordered.
以下、この発明の一実施例について説明する。 An embodiment of the present invention will be described below.
第１図（ａ）、（ｂ）はこの発明の半導体レーザの一実
施例の製造方法を示す断面図である。これらの図におい
て、１はｎ −Ｇ ａ Ａ ｓ基板、２はｎ−ＡｊＧａ
Ａｓクラッド層、３はＭ Ｑ Ｗ （Ｍｕ Ｉ ｔ ｉ
Ｑｕａｎｔｕｍ Ｗｅｌｌ：多重量子井戸）活性層、４
はｐ−ＡＩ！ＧａＡｓクラッド層、５はｐ −Ｇ ａ
Ａ Ｓ ：！ ンクク＋−Ｊｌ、６はレジスト、７はＢ
ｅイオンビーム、８はＢｅイオン注入領域、９はｐ電極
、１０はｎ電極である。FIGS. 1(a) and 1(b) are cross-sectional views showing a method of manufacturing an embodiment of the semiconductor laser of the present invention. In these figures, 1 is an n-GaAs substrate, 2 is an n-AjGa
As cladding layer, 3 is M Q W (Mu I t i
Quantum Well: active layer, 4
is p-AI! GaAs cladding layer, 5 is p-Ga
AS:! Nkuku+-Jl, 6 is resist, 7 is B
8 is a Be ion implantation region, 9 is a p-electrode, and 10 is an n-electrode.
次に製造方法について説明する。Next, the manufacturing method will be explained.
まず、第１図（ａ）に示すように、ｎ −Ｇ ａ Ａ
ｓ基板１上にｎ −Ａ Ｉ Ｇ ａ Ａ ｓクラッド層
２．ＭＱＷ活性層３．ｐ−Ａｔ’ＧａＡｓクラッド層４
ｔ ｐ−Ｇ ａ Ａ ｓコンタクト層５を成長させ
、その上にレジスト６を導波方向に周期的なパターン状
に形成した後、Ｂｅイオンビーム７を照射することによ
って、第１図（ｂ）に示すようなりｅイオン注入領域８
を形成する。このＢｅイオン注入領域８内のＭＱＷ活性
層３は、無秩序化されて周囲の無秩序化されていないＭ
ＱＷ活性層３よりも低い屈折率となっている。この後、
レジスト６を除去し、ｐｍ電極およびｎｆ４１ｉｉ１０
を形成すれば素子が完成する。First, as shown in FIG. 1(a), n −G a A
An n-AIGaAs cladding layer 2 is formed on the s-substrate 1. MQW active layer 3. p-At'GaAs cladding layer 4
After growing the tp-G a As contact layer 5 and forming a resist 6 on it in a periodic pattern in the waveguide direction, a Be ion beam 7 is irradiated to form the contact layer 5 shown in FIG. 1(b). e ion implantation region 8 as shown in
form. The MQW active layer 3 in this Be ion-implanted region 8 is disordered and the surrounding non-disordered MQW active layer 3 is
It has a lower refractive index than the QW active layer 3. After this,
Remove resist 6, pm electrode and nf41ii10
The device is completed by forming .
次に動作について説明する。Next, the operation will be explained.
ｐ電極９およびｎ電極１０によりダブルテヘロ構造に対
して順方向にバイアスをかけると、ＭＱＷ活性層３で光
が生じ、生じた光はＢｅイオン注入領域８の各々の境界
部分によって反射を受ける。When a forward bias is applied to the double Tehero structure by the p-electrode 9 and the n-electrode 10, light is generated in the MQW active layer 3, and the generated light is reflected by the respective boundary portions of the Be ion-implanted regions 8.
ここで、個々の反射率は高（ないが、Ｂｅイオン注入領
域８を周期的に多数形成してＤＢＲ領域を形成している
ので、反射されて戻った光の位相が一致することによっ
て全体として大きな反射率を得ることが可能になる。こ
のとき、ＭＱＷ活性層３内に反射されて伝搬しうる光の
波長はＢｅイオン注入領域８の周期の整数倍に限られて
いるため、発振波長は選択され単一モードとなる。Here, although the individual reflectance is high (not high), since a large number of Be ion-implanted regions 8 are formed periodically to form the DBR region, the phase of the reflected and returned light matches, resulting in the overall reflection rate being high. It becomes possible to obtain a large reflectance.At this time, since the wavelength of light that can be reflected and propagated within the MQW active layer 3 is limited to an integral multiple of the period of the Be ion implanted region 8, the oscillation wavelength is Selected and becomes single mode.
すなオ〕ち、この半導体レーザは、活性層をＭＱＷで構
成し、このＭＱＷ活性層３に選択的にイオン注入（７て
無秩序化を行うことにより屈折率を下げて回折格子を形
成しているので、ウェハ表面に段差を生じさせろことな
く簡単な工程でＤＢＲレザを実現できる。In other words, in this semiconductor laser, the active layer is composed of MQW, and the MQW active layer 3 is selectively implanted with ions (7) to be disordered to lower the refractive index and form a diffraction grating. Therefore, a DBR laser can be realized through a simple process without creating a step on the wafer surface.
なお、上記実施例ではＧａＡｓ系の材料を用いたが、他
の材料、例えばＩｎＰ系を使用してもよい。Note that although GaAs-based material was used in the above embodiment, other materials such as InP-based material may be used.
また、活性層はＭＱＷを用いたが、他の構造、例えｉｆ
Ｓ Ｑ Ｗ構造の活性層にイオン注入をすることによ
っても回折格子を形成できる。In addition, although MQW was used for the active layer, other structures, such as if
A diffraction grating can also be formed by implanting ions into the active layer of the SQW structure.
さらに、イオン注入でなく拡散を用いても同様の効果が
期待できる。Furthermore, similar effects can be expected even if diffusion is used instead of ion implantation.
また、上記実施例では、Ｂｅイオン注入領域８を素子の
後部に形成してＤＢＲレーザとしたが、他の部分、例え
ば素子中央部分に形成しても同様の効果が得られるほか
、ＭＱＷ活性層３全体に形成しても、第２図に示すよう
なり Ｆ Ｂ （Ｄｉｓｔｒｉｂｕｔｅｄ Ｆｅｅｄｂ
ａｃｋ ）レーザが得られ、やはり単一モード発振動作
が可能になる。Further, in the above embodiment, the Be ion implantation region 8 was formed at the rear of the device to create a DBR laser, but the same effect can be obtained by forming it in other parts, for example, the central part of the device, and the MQW active layer Even if it is formed over the entirety of F B (Distributed Feedb) as shown in Fig.
ack) laser is obtained, and single mode oscillation operation is also possible.
この発明は以上説明したとおり、量子井戸構造の導波方
向に、周期的に無秩序化された領域を少なくとも２箇所
以上備えたので、多重量子井戸構造の周期的に無秩序化
されて屈折率が低くなった領域と、無秩序化されていな
い領域とから等価的に回折格子が形成され、ウェハ表面
に段差を生じさせることなく、イオン注入や拡散等によ
って無秩序化を行うことにより容易に回折格子を形成で
き、０ＥＩＣ化に適した低１７きい値の単一モードレー
ザが実現できるという効果がある。As explained above, this invention has at least two periodically disordered regions in the waveguide direction of the quantum well structure, so that the refractive index of the multi-quantum well structure is reduced by being periodically disordered. A diffraction grating is equivalently formed from the disordered region and the non-disordered region, and the diffraction grating can be easily formed by disordering by ion implantation, diffusion, etc. without creating a step on the wafer surface. This has the effect of realizing a single mode laser with a low 17 threshold suitable for 0EIC.
第１図はこの発明の半導体レーザの一実施例の製造方法
を示す断面図、第２図はこの発明の他の実施例を示す断
面図、第３図は従来のＤＢＲレーザを示す断面図である
。
図において、１はｎ −Ｇ ａ Ａ ｓ基板、２はａＡ
ｔ’ＧａＡｓクラッド層、３はＭＱＷ活性層、４はｐ
−Ａ Ｉ Ｇ ａ Ａ ｓクラッド層、５はｐ −Ｇ
ａＡｓコンタクト層、６はレジスト、７はＢｅイオレビ
ーム、８はＢｅイオン注入領域、９はｐ電極、１０はｎ
電極である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 （外２名）ｎｔ掻FIG. 1 is a sectional view showing a manufacturing method of one embodiment of the semiconductor laser of the present invention, FIG. 2 is a sectional view showing another embodiment of the invention, and FIG. 3 is a sectional view showing a conventional DBR laser. be. In the figure, 1 is an n-GaAs substrate, 2 is an aA
t'GaAs cladding layer, 3 is MQW active layer, 4 is p
-AIGaAs cladding layer, 5 is p-G
aAs contact layer, 6 resist, 7 Be ion beam, 8 Be ion implantation region, 9 p electrode, 10 n
It is an electrode. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent: Masuo Oiwa (2 others)
Claims (1)
半導体レーザにおいて、前記量子井戸構造の導波方向に
、周期的に無秩序化された領域を少なくとも２箇所以上
備えたことを特徴とする半導体レーザ。1. A semiconductor laser having a double heterostructure including a quantum well as an active layer, comprising at least two periodically disordered regions in the waveguide direction of the quantum well structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63261871A JPH02106987A (en) | 1988-10-17 | 1988-10-17 | semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63261871A JPH02106987A (en) | 1988-10-17 | 1988-10-17 | semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02106987A true JPH02106987A (en) | 1990-04-19 |
Family
ID=17367917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63261871A Pending JPH02106987A (en) | 1988-10-17 | 1988-10-17 | semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02106987A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1074865A3 (en) * | 1999-08-06 | 2002-04-24 | Waseda University | Waveguide grating and method and apparatus for forming same |
| CN110262045A (en) * | 2019-06-18 | 2019-09-20 | 天津大学 | A kind of quick method for continuously adjusting of salt free ligands two-dimension optical lattice period |
-
1988
- 1988-10-17 JP JP63261871A patent/JPH02106987A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1074865A3 (en) * | 1999-08-06 | 2002-04-24 | Waseda University | Waveguide grating and method and apparatus for forming same |
| US6516117B1 (en) | 1999-08-06 | 2003-02-04 | Makoto Fujimaki | Grating and method and apparatus for forming same |
| CN110262045A (en) * | 2019-06-18 | 2019-09-20 | 天津大学 | A kind of quick method for continuously adjusting of salt free ligands two-dimension optical lattice period |
| CN110262045B (en) * | 2019-06-18 | 2020-10-02 | 天津大学 | Diffraction-free two-dimensional optical lattice period rapid and continuous adjusting method |
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