JPH02104656U - - Google Patents
Info
- Publication number
- JPH02104656U JPH02104656U JP1396089U JP1396089U JPH02104656U JP H02104656 U JPH02104656 U JP H02104656U JP 1396089 U JP1396089 U JP 1396089U JP 1396089 U JP1396089 U JP 1396089U JP H02104656 U JPH02104656 U JP H02104656U
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- showing
- view
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
Description
第１図は本考案による発光ダイオードの一実施
例を示す斜視図、第２図はＬＥＤランプの基本構
造を示す断面図、第３図は従来の発光ダイオード
例を示す斜視図、第４図は従来の発光ダイオード
の発光取出し過程を示す、第３図の―線断面
図、第５図は本考案の発光ダイオードの発光部電
極形状例を示す平面図、第６図は同じく他の発光
電極形状例を示す平面図、第７図は本考案の接続
部電極下の絶縁層を、ｐ型エピタキシヤル層で形
成した例を示す断面図、第８図は同じくイオン打
込みによるｐ型活性層で絶縁層を形成した例を示
す断面図、第９図は同じくイオン打込みによるア
モルフアス層で絶縁層を形成した例を示す断面図
である。
８は結晶面を構成するｎ型ＧａＡｌＡｓ層、５
は金属配線となるＡｕ配線、１４は絶縁層、１５
は発光部電極、１６は接続部電極である。
Fig. 1 is a perspective view showing an embodiment of a light emitting diode according to the present invention, Fig. 2 is a sectional view showing the basic structure of an LED lamp, Fig. 3 is a perspective view showing an example of a conventional light emitting diode, and Fig. 4 is a perspective view showing an example of a conventional light emitting diode. FIG. 3 is a cross-sectional view taken along the line ``--'' showing the light emitting extraction process of a conventional light emitting diode, FIG. 5 is a plan view showing an example of the shape of the light emitting part electrode of the light emitting diode of the present invention, and FIG. 6 is a diagram showing another shape of the light emitting electrode. A plan view showing an example, FIG. 7 is a cross-sectional view showing an example in which the insulating layer under the connection electrode of the present invention is formed with a p-type epitaxial layer, and FIG. 8 is an insulating layer with a p-type active layer also formed by ion implantation. FIG. 9 is a cross-sectional view showing an example in which a layer is formed, and FIG. 9 is a cross-sectional view showing an example in which an insulating layer is similarly formed using an amorphous layer formed by ion implantation. 8 is an n-type GaAlAs layer constituting a crystal plane, 5
14 is an insulating layer, 15 is an Au wiring that becomes a metal wiring,
1 is a light emitting part electrode, and 16 is a connecting part electrode.
Claims (1)
めの金属電極を設けた発光ダイオードにおいて、
上記金属電極を、 結晶面上に直接設けられ、パターンを線状に形
成して、取り出される光の遮蔽面積を減少させる
発光部電極と、 該発光部電極に連接される共に、結晶面上に絶
縁層を介して設けられ、パターンを面状に形成し
て、金属配線を接続する接続部電極と に分離したことを特徴とする発光ダイオード。[Claims for Utility Model Registration] In a light emitting diode in which a metal electrode for connecting metal wiring is provided on a crystal surface from which light is extracted,
A light emitting part electrode which is provided directly on the crystal surface and has a linear pattern to reduce the shielding area of the extracted light; 1. A light emitting diode, which is provided through an insulating layer, has a planar pattern, and is separated from a connection electrode for connecting metal wiring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1396089U JPH02104656U (en) | 1989-02-08 | 1989-02-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1396089U JPH02104656U (en) | 1989-02-08 | 1989-02-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02104656U true JPH02104656U (en) | 1990-08-20 |
Family
ID=31224726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1396089U Pending JPH02104656U (en) | 1989-02-08 | 1989-02-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02104656U (en) |
-
1989
- 1989-02-08 JP JP1396089U patent/JPH02104656U/ja active Pending