JPH0196940A - Heat block for wire bonding device - Google Patents
Heat block for wire bonding deviceInfo
- Publication number
- JPH0196940A JPH0196940A JP62255368A JP25536887A JPH0196940A JP H0196940 A JPH0196940 A JP H0196940A JP 62255368 A JP62255368 A JP 62255368A JP 25536887 A JP25536887 A JP 25536887A JP H0196940 A JPH0196940 A JP H0196940A
- Authority
- JP
- Japan
- Prior art keywords
- heat block
- die pad
- lead frame
- guide plate
- wire bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 101100232929 Caenorhabditis elegans pat-4 gene Proteins 0.000 abstract 4
- 230000035515 penetration Effects 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、リードフレームおよびリードフレーム上に固
着された半導体素子を加熱するワイヤボンディング用ヒ
ートブロックに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heat block for wire bonding that heats a lead frame and a semiconductor element fixed on the lead frame.
半導体素子上の電極とリードフレームのリードとを金属
ワイヤで接続する際に金属ワイヤと半導体素子の周縁、
あるいはリードフレームにおけるダイパットの周縁との
電気的短絡を無くするために、ダイパットとリードフレ
ームの他の部分との高さの異なるリードフレームを使用
する場合があるＯ
第４図は実行昭５７−４６６０５号公報に示された前記
リードフレームを加熱するためのヒートブロックを示す
斜視図、詑５図は第４図中…−ＩＩ臓断面図、第６図は
ヒートブロックにリードフレームが固定された状態を示
す断面図である。これらの図において、１はヒートブロ
ック本体、２はリードフレーム３のダイパット４が挿入
されるダイパット収容部で、このダイパット収容部２は
リードフレーム３とダイパット４とを連結する連結部５
が挿入される切り欠き２ａを有し、ダイパット４とリー
ドフレーム３の他の部分との高さの差、換言すればダイ
パット４の突出寸法と略等しい深さをもって形成されて
いる。６は前記ダイパット４上に固着された半導体素子
、７はこの半導体素子６の’ｃ 極６ ａとリードフレ
ーム３のリード３ａとを接続するための金属ワイヤ、８
はワイヤボンディング時にリードフレーム３の周辺部を
押圧するフレーム押さえ、９はヒータ（図示せず）を挿
入するためのヒータ挿入孔、フＯはワイヤボンディング
するためのキャピラリーである。すなわち、リードフレ
ーム搬送装置（図示せず）によってヒートブロック本体
１０表面に治って搬送されたリードフレーム３は、ヒー
トブロック本体１のダイパット収容部２内にダイパット
４が挿入され、ダイパット収容部２の底面にダイパット
４の汲置が当接した状態でリードフレーム３はヒートブ
ロック本体１上に固定されることになる。しかるに、こ
のように構成されたヒートブロックにおいては、ひとつ
のヒートブロック本体１にダイパット収容部２とヒータ
挿入孔９とが一体に設けられているため、グイパット４
の形状が変わった時にはヒータを脱抜し、ヒートブロッ
ク本体１を交換しなければならなかった。このためヒー
トブロック本体１の交換に時間がかかるという不具合が
おった。When connecting the electrode on the semiconductor element and the lead of the lead frame with the metal wire, the periphery of the metal wire and the semiconductor element,
Alternatively, in order to eliminate electrical short circuits with the periphery of the die pad in the lead frame, a lead frame may be used in which the height of the die pad and other parts of the lead frame are different. A perspective view showing the heat block for heating the lead frame shown in the publication, Figure 5 is a cross-sectional view of Figure 4...-II, and Figure 6 is a state in which the lead frame is fixed to the heat block. FIG. In these figures, 1 is the heat block main body, 2 is a die pad accommodating part into which the die pad 4 of the lead frame 3 is inserted, and this die pad accommodating part 2 is a connecting part 5 that connects the lead frame 3 and the die pad 4.
It has a notch 2a into which the die pad 4 is inserted, and is formed to have a depth that is approximately equal to the difference in height between the die pad 4 and other parts of the lead frame 3, in other words, the protrusion dimension of the die pad 4. 6 is a semiconductor element fixed on the die pad 4, 7 is a metal wire for connecting the 'c pole 6a of this semiconductor element 6 and the lead 3a of the lead frame 3, 8
Reference numeral 9 indicates a frame presser for pressing the peripheral portion of the lead frame 3 during wire bonding, 9 indicates a heater insertion hole for inserting a heater (not shown), and O indicates a capillary for wire bonding. That is, the lead frame 3 cured onto the surface of the heat block main body 10 and transported by the lead frame transport device (not shown) has the die pad 4 inserted into the die pad accommodating portion 2 of the heat block main body 1, and the die pad 4 is inserted into the die pad accommodating portion 2 of the heat block main body 1. The lead frame 3 is fixed onto the heat block body 1 with the bottom surface of the die pad 4 in contact with the bottom surface. However, in the heat block configured as described above, since the die pad accommodating portion 2 and the heater insertion hole 9 are integrally provided in one heat block body 1, the die pad 4
When the shape of the heater block changed, the heater had to be removed and the heat block body 1 had to be replaced. For this reason, there was a problem that it took time to replace the heat block main body 1.
第７図はこのような不具合を解決するためのヒートブロ
ックを示す斜視図、第８図は第７図中１−［線断面図で
ある。これらの図において前記第４−で説明した部材と
同一もしくは同等部材について＃′ｉ同一符号を付し、
詳細な説明は省略する。FIG. 7 is a perspective view showing a heat block for solving such a problem, and FIG. 8 is a sectional view taken along the line 1-[ in FIG. In these figures, the same reference numerals #'i are given to the members that are the same as or equivalent to those explained in Section 4- above,
Detailed explanation will be omitted.
これらの図において、１１はダイパット収容部２が形成
されたプレートで、このプレート１１はねじ１２によっ
てヒートブロック本体１上に固定されている。すなオ〕
ち、このヒートブロックを１吏用してワイヤボンディン
グするには、先ず、プレート１１におけるダイパット収
容部２の底面にリードフレーム（図示せず）のダイパッ
ト（図示せず）の裏面を当接させてリードフレーム３を
プレート１１上に載置させる。その後、フレーム押さえ
８によってこのリードフレームをプレート１１上に固定
する。この除、ヒートブロック本体１の熱はプレート１
１を介してリードフレームに伝導されることになる。そ
して、リードフレームおよびダイパット上の半導体素子
（図示せず）が充分に加熱された後にワイヤボンディン
グされることになる。In these figures, reference numeral 11 denotes a plate on which a die pad accommodating portion 2 is formed, and this plate 11 is fixed onto the heat block main body 1 with screws 12. Sunao]
To perform wire bonding using this heat block, first, the back surface of a die pad (not shown) of a lead frame (not shown) is brought into contact with the bottom surface of the die pad accommodating portion 2 in the plate 11. Lead frame 3 is placed on plate 11. Thereafter, this lead frame is fixed onto the plate 11 by the frame presser 8. Except for this, the heat of the heat block body 1 is transferred to the plate 1.
1 to the lead frame. Then, wire bonding is performed after the lead frame and the semiconductor element (not shown) on the die pad are sufficiently heated.
したがって、ダイパットの形状が変更された場合にはプ
レート１１のみを取り替えればよく、ヒータの着脱は行
なう必要がない。Therefore, when the shape of the die pad is changed, only the plate 11 needs to be replaced, and there is no need to attach or detach the heater.
しかるに、このように構成されたワイヤボンディング用
ヒートブロックにおいては、第９図に示すようにプレー
ト１０がヒートブロック本体１に対して傾いて取付けら
れると、リードフレーム３はリードフレーム搬送装！（
図示せず）によってヒートブロック本体１の上面に沿っ
て平行に搬送されるため、グイパット４とダイパット収
容部２の底面との間に隙間が生じ、ワイヤボンディング
する・祭に半導体素子６が充分に昇温されていなかった
り、キャピラリー１０が半導体素子６のｉ極（図示せず
）に金属ワイヤ７を圧接させることによって、ダイパッ
ト４が揺動したりして金属ワイヤ７が接続不良を起こす
という問題があった。However, in the wire bonding heat block constructed in this way, when the plate 10 is attached at an angle with respect to the heat block main body 1 as shown in FIG. 9, the lead frame 3 becomes a lead frame conveying device! (
(not shown), the heat block body 1 is conveyed in parallel along the top surface of the heat block body 1, so a gap is created between the heat block body 1 and the bottom surface of the die pad accommodating section 2. The problem is that if the temperature is not raised or the capillary 10 presses the metal wire 7 to the i-pole (not shown) of the semiconductor element 6, the die pad 4 swings and the metal wire 7 causes a connection failure. was there.
本発明に係るワイヤボンディング装置用ヒートブロック
は、ヒートブロック本体におけるリードフレームの当接
面上に、グイパットの突出寸法と略等しい厚みを有しか
つダイパットおよび連結部が挿入される貫通穴が形成さ
れたガイドプレートを取付けたものである。In the heat block for a wire bonding apparatus according to the present invention, a through hole is formed on the contact surface of the lead frame in the heat block main body, and has a thickness substantially equal to the protruding dimension of the die pad and into which the die pad and the connecting portion are inserted. It is equipped with a guide plate.
ダイパットはガイドグレートの貫通穴内に挿入され、そ
の裏面がヒートブロック本体に密接する。The die pad is inserted into the through hole of the guide grate, and its back surface is brought into close contact with the heat block body.
以下、その構成等を図に示す実施例により詳細に説明す
る。Hereinafter, its configuration and the like will be explained in detail with reference to embodiments shown in the drawings.
第１図は本発明に係るヒートブロックの斜視図、第２図
は第１図中ｌ−１ｉ！断面図、第３図はヒートブロック
の使用状態を示す断面図である。これらの図において前
記従来例で説明したものと同一もしくは同等部材につい
ては同一符号を付し、ここにおいて詳細な説明は省略す
る。これらの図において、２１はリードフレーム３のダ
イパット４以外の部分を支承するだめのガイドプレート
で、このガイドプレート２１はダイパット４および連結
部５が挿入される貫通穴２１ａが形成されており、その
厚み寸法はダイパット４とリードフレーム３の池の部分
との高さの差、換言すればダイパットの突出寸法と略等
しくなるように形成されている。FIG. 1 is a perspective view of a heat block according to the present invention, and FIG. 2 is a perspective view of the heat block shown in FIG. A sectional view, FIG. 3 is a sectional view showing the state in which the heat block is used. In these figures, the same or equivalent members as those explained in the conventional example are given the same reference numerals, and detailed explanation will be omitted here. In these figures, 21 is a guide plate that supports a portion of the lead frame 3 other than the die pad 4, and this guide plate 21 is formed with a through hole 21a into which the die pad 4 and the connecting portion 5 are inserted. The thickness dimension is formed to be approximately equal to the height difference between the die pad 4 and the pond portion of the lead frame 3, in other words, the protrusion dimension of the die pad.
またこのガイドプレート２１はねじ１２によってヒート
ブロック本体１の上面に取付けられておシ、使用される
リードフレーム３のダイパット４の形状に合わせて取９
替えることができる。The guide plate 21 is attached to the upper surface of the heat block main body 1 with screws 12, and is attached to the top surface of the heat block body 1 using screws 12.
Can be changed.
したがって、このようなガイドプレート２１が堰付けら
れたヒートブロックにおいては、ガイド７’Ｌ／−）２
１がヒートブロック本体１上に傾いて取付けられても、
貫通穴２１内にダイパット４が挿入され、その裏面がヒ
ートブロック１に密接することになる。Therefore, in a heat block to which such a guide plate 21 is attached, the guide 7'L/-)2
1 is installed at an angle on the heat block body 1,
The die pad 4 is inserted into the through hole 21, and its back surface comes into close contact with the heat block 1.
以上説明したように本発明によれば、ヒートブロック本
体におけるリードフレームの当接面上に、ダイパットの
突出寸法と略等しい厚みを有しかつダイパットおよび連
結部が挿入される貫通穴が形成されたガイドプレートを
取付けたため、ガイドプレートが傾いて取付けられても
ダイパットは貫通穴内に挿入され、その裏面１）Ｋヒー
トブロック本体に密接することになるから、ダイパット
の載置が安定し、かつヒートブロック本体の熱がダイパ
ットに確実に伝導されることになるので、確実なワイヤ
ボンディングを行うことができる。As explained above, according to the present invention, a through hole is formed on the contact surface of the lead frame in the heat block main body, and has a thickness substantially equal to the protruding dimension of the die pad, and into which the die pad and the connecting portion are inserted. Because the guide plate is installed, even if the guide plate is installed at an angle, the die pad will be inserted into the through hole, and the back side 1) will be in close contact with the K heat block body, so the die pad will be placed stably and the heat block Since the heat of the main body is reliably conducted to the die pad, reliable wire bonding can be performed.
第１図は本発明に係るヒートブロックの斜視図、第２図
は第１図中１−１線断面図、第３図はヒートブロックの
使用状態を示す断面図、第４図は従来のヒートブロック
を示す斜視図、第５図は第４図中１−１線断面図、第６
図はヒートブロックにリードフレームが固定された状態
を示す断面図、第７図は従来のヒートブロックを示す斜
視図、第８図は第７図中１−１線断面図、第９図は従来
のヒートブロックの使用状態を示す斜視図である０１・
自・・ヒートブロック本体、３・・・・リードフレーム
、４・・拳・ダイパット、５・・・・連結部、２１・・
・嗜ガイドプレート、 ２１ａ・Φ・・貫通穴。Fig. 1 is a perspective view of a heat block according to the present invention, Fig. 2 is a sectional view taken along line 1-1 in Fig. 1, Fig. 3 is a sectional view showing how the heat block is used, and Fig. 4 is a conventional heat block. A perspective view showing the block, Fig. 5 is a sectional view taken along the line 1-1 in Fig. 4, and Fig. 6
The figure is a cross-sectional view showing the lead frame fixed to the heat block, Figure 7 is a perspective view showing a conventional heat block, Figure 8 is a cross-sectional view taken along line 1-1 in Figure 7, and Figure 9 is a conventional heat block. 01 is a perspective view showing how the heat block is used.
Self: heat block body, 3: lead frame, 4: fist/die pad, 5: connecting part, 21...
・Adjustment guide plate, 21a・Φ・・Through hole.
Claims (1)
成されたリードフレームを支承し加熱するヒートブロッ
ク本体を備えたワイヤボンディング装置用ヒートブロッ
クにおいて、前記ヒートブロック本体におけるリードフ
レームの当接面上に、前記ダイパットの突出寸法と略等
しい厚みを有しかつダイパットおよび連結部が挿入され
る貫通穴が形成されたガイドプレートを取付けたことを
特徴とするワイヤボンディング装置用ヒートブロック。In a heat block for a wire bonding apparatus, which includes a heat block body that supports and heats a lead frame in which a die pad is formed so as to protrude from other parts via a connecting portion, a heat block is provided on a contact surface of the lead frame in the heat block body. A heat block for a wire bonding apparatus, characterized in that a guide plate is attached thereto, the guide plate having a thickness substantially equal to the protruding dimension of the die pad and having through holes into which the die pad and the connecting portion are inserted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62255368A JPH0196940A (en) | 1987-10-09 | 1987-10-09 | Heat block for wire bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62255368A JPH0196940A (en) | 1987-10-09 | 1987-10-09 | Heat block for wire bonding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0196940A true JPH0196940A (en) | 1989-04-14 |
Family
ID=17277800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62255368A Pending JPH0196940A (en) | 1987-10-09 | 1987-10-09 | Heat block for wire bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0196940A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5201450A (en) * | 1991-07-15 | 1993-04-13 | Goldstar Electron Co., Ltd. | Heat block of wire bonding machine |
| US6390350B2 (en) | 1997-02-05 | 2002-05-21 | Micron Technology, Inc. | Quick change precisor |
-
1987
- 1987-10-09 JP JP62255368A patent/JPH0196940A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5201450A (en) * | 1991-07-15 | 1993-04-13 | Goldstar Electron Co., Ltd. | Heat block of wire bonding machine |
| US6390350B2 (en) | 1997-02-05 | 2002-05-21 | Micron Technology, Inc. | Quick change precisor |
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