JPH0189762U - - Google Patents

Info

Publication number

JPH0189762U

JPH0189762U JP1987186299U JP18629987U JPH0189762U JP H0189762 U JPH0189762 U JP H0189762U JP 1987186299 U JP1987186299 U JP 1987186299U JP 18629987 U JP18629987 U JP 18629987U JP H0189762 U JPH0189762 U JP H0189762U

Authority

JP

Japan

Prior art keywords

thin film

iron silicide

substrate

temperature sensor

utility

Prior art date

1987-12-07

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
• Discuss

• 239000010409 thin film Substances 0.000 claims description 4
• 239000000758 substrate Substances 0.000 claims description 2
• XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
• 229910052742 iron Inorganic materials 0.000 claims 2
• 229910021332 silicide Inorganic materials 0.000 claims 2
• FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
• 238000000151 deposition Methods 0.000 claims 1
• 229910052760 oxygen Inorganic materials 0.000 claims 1
• 239000001301 oxygen Substances 0.000 claims 1
• 238000010586 diagram Methods 0.000 description 2
• 238000006243 chemical reaction Methods 0.000 description 1
• 239000007772 electrode material Substances 0.000 description 1
• WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
• 238000004519 manufacturing process Methods 0.000 description 1
• 239000000463 material Substances 0.000 description 1
• 238000007738 vacuum evaporation Methods 0.000 description 1