JPH0150925B2 - - Google Patents

Info

Publication number
JPH0150925B2
JPH0150925B2 JP14125281A JP14125281A JPH0150925B2 JP H0150925 B2 JPH0150925 B2 JP H0150925B2 JP 14125281 A JP14125281 A JP 14125281A JP 14125281 A JP14125281 A JP 14125281A JP H0150925 B2 JPH0150925 B2 JP H0150925B2
Authority
JP
Japan
Prior art keywords
voltage
base
npn transistor
power supply
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14125281A
Other languages
Japanese (ja)
Other versions
JPS5843014A (en
Inventor
Hiroshi Mizuguchi
Makoto Goto
Shingi Yokobori
Kazuyuki Nakamura
Taiji Waki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14125281A priority Critical patent/JPS5843014A/en
Publication of JPS5843014A publication Critical patent/JPS5843014A/en
Publication of JPH0150925B2 publication Critical patent/JPH0150925B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/569Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
    • G05F1/571Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overvoltage detector

Description

【発明の詳細な説明】 本発明は、レーザーダイオードやInSbホール
素子など、過電圧によつて破壊され易い半導体の
ための電源装置に関し、きわめて簡単な構成で、
しかもモノシリツクIC化に適した回路構成を提
供するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a power supply device for semiconductors that are easily destroyed by overvoltage, such as laser diodes and InSb Hall elements, and has an extremely simple configuration.
Moreover, it provides a circuit configuration suitable for monolithic IC implementation.

従来、例えばInSbホール素子をロータの回転
位置検出素子として用いるブラシレスモータの駆
動回路などにおいては、前記ホール素子に定電圧
を印加して使用した方が周囲温度の変化に対して
好ましい出力特性が得られるため、前記駆動回路
を構成するモノシリツクICの内部に第1図の破
線部で示す様な簡単な電源回路が構成されてい
た。
Conventionally, for example, in brushless motor drive circuits that use InSb Hall elements as rotor rotational position detection elements, it has been found that applying a constant voltage to the Hall elements provides more favorable output characteristics against changes in ambient temperature. Therefore, a simple power supply circuit as shown by the broken line in FIG. 1 was constructed inside the monolithic IC constituting the drive circuit.

第1図において、1はホール素子であり、2は
回路全体のバイアス電源であり、3は前記ホール
素子1に印加する電圧を決定するための安定化さ
れた電源であり、もともと前記電源2が安定化さ
れておれば前記電源2と前記電源3は作用される
が、前記電源2が安定化されていない場合には専
用の外部電源が用いられたり、IC100Aの内
部で作られたりする。
In FIG. 1, 1 is a Hall element, 2 is a bias power supply for the entire circuit, and 3 is a stabilized power supply for determining the voltage applied to the Hall element 1. Originally, the power supply 2 was If the power source 2 and the power source 3 are stabilized, the power source 2 and the power source 3 are operated, but if the power source 2 is not stabilized, a dedicated external power source is used or is generated inside the IC 100A.

前記電源3の出力電圧は抵抗4と抵抗5によつ
て分割され、一方、IC100Aの内部のトラン
ジスタ6のベース・エミツタ間電圧とダイオード
7の順方向電圧が相殺し合うので出力端子bには
入力端子cと同じ電圧が現われる。
The output voltage of the power supply 3 is divided by the resistors 4 and 5, and on the other hand, the voltage between the base and emitter of the transistor 6 inside the IC 100A and the forward voltage of the diode 7 cancel each other out, so that the input voltage is not input to the output terminal b. The same voltage appears at terminal c.

この種の電源回路に誤差増幅器を備えた帰還型
の定電圧回路が用いられない理由は2つある。
There are two reasons why a feedback type constant voltage circuit equipped with an error amplifier is not used in this type of power supply circuit.

まず第1に、帰還型の定電圧回路は素子数が多
くなり、ICのチツプサイズの増大を招くという
不都合のためであり、第2には、帰還型の定電圧
回路は高周波発振を起こし易く、それを防止する
ためのコンデンサが必要となるためである。
Firstly, feedback-type constant voltage circuits have a large number of elements, which increases the chip size of the IC, which is an inconvenience.Secondly, feedback-type constant voltage circuits tend to cause high-frequency oscillations. This is because a capacitor is required to prevent this.

ところで第1図の回路において、工場において
抵抗4あるいは抵抗5として抵抗値の違うものが
取り付けられたり、あるいは抵抗5の挿入洩れな
どがあつたりすると、ホール素子1には予期せぬ
電圧が印加されることになり、過大電圧が印加さ
れて前記ホール素子が破壊されてしまうという問
題があつた。
By the way, in the circuit shown in Figure 1, if resistors 4 or 5 with different resistance values are installed at the factory, or if the resistor 5 is not inserted properly, an unexpected voltage will be applied to the Hall element 1. As a result, there was a problem in that an excessive voltage was applied and the Hall element was destroyed.

本発明はエミツタフオロワータイプの電源回路
に負荷を過電圧の印加から保護する保護機能をも
たせることにより、上述の様な問題を解消するも
のである。第2図は本発明の一実施例を示す回路
結線図である。第2図において、IC100Bの
内部にはコレクタ側から電流制限用抵抗9を介し
て受電し、エミツタ側からホール素子1に給電す
るNPNトランジスタ60と、該NPNトランジス
タ60のベースにバイアス電流を供給するための
電流供給回路80と、前記電流供給回路80から
前記NPNトランジスタ60のベースに至る線路、
具体的には最大出力電圧調節のためのダイオード
10と前記NPNトランジスタ60のベースの接
続点にエミツタが接続され、コレクタがマイナス
側給電線路dに接続されたPNPトランジスタ7
0(前記NPNトランジスタ60と同様にダーリ
ントン接続されている。)と、前記電流供給回路
80から前記NPNトランジスタのベースに至る
線路、具体的には前記ダイオード10のアノード
側とマイナス側給電線路dの間に接続された定電
圧ダイオード11を含めて構成されている。
The present invention solves the above-mentioned problems by providing an emitter follower type power supply circuit with a protection function for protecting the load from application of overvoltage. FIG. 2 is a circuit diagram showing one embodiment of the present invention. In FIG. 2, inside the IC 100B, there is an NPN transistor 60 that receives power from the collector side via a current limiting resistor 9 and supplies power to the Hall element 1 from the emitter side, and supplies a bias current to the base of the NPN transistor 60. a current supply circuit 80 for and a line from the current supply circuit 80 to the base of the NPN transistor 60;
Specifically, a PNP transistor 7 has an emitter connected to a connection point between a diode 10 for adjusting the maximum output voltage and the base of the NPN transistor 60, and a collector connected to a negative power supply line d.
0 (darlington connected like the NPN transistor 60) and the line from the current supply circuit 80 to the base of the NPN transistor, specifically the anode side of the diode 10 and the negative side feed line d. The structure includes a constant voltage diode 11 connected between them.

また、定電圧電源3の出力電圧は抵抗4と抵抗
5によつて構成された電圧分割回路90によつて
分圧され、さらに入力端子cを介して前記PNP
トランジスタ70のベースに印加されている。
Further, the output voltage of the constant voltage power supply 3 is divided by a voltage dividing circuit 90 constituted by a resistor 4 and a resistor 5, and further connected to the PNP via an input terminal c.
It is applied to the base of transistor 70.

第2図の構成において、出力端子bには2.5V
程度の出力電圧が現われる様に抵抗4と抵抗5の
抵抗比が決定され、定電圧ダイオード11には
6V前後の降伏電圧を有するものが用いられる。
In the configuration shown in Figure 2, 2.5V is applied to output terminal b.
The resistance ratio of resistor 4 and resistor 5 is determined so that an output voltage of approximately
A material with a breakdown voltage of around 6V is used.

この状態において、前記抵抗4,5に正規の抵
抗値のものが用いられたときには、出力電圧はも
ちろん2.5Vであり、また、トランジスタのベー
ス・エミツタ間電圧、ダイオードの順方向電圧は
いずれも約0.7Vであるので、ダイオード10の
アノード側の電位は4.6Vになり、定電圧ダイオ
ード11には電流が流れず、したがつて前記定電
圧ダイオードを付加したことによる電力損失は生
じない。
In this state, when the resistors 4 and 5 are of the normal resistance value, the output voltage is of course 2.5V, and the base-emitter voltage of the transistor and the forward voltage of the diode are both approximately Since the voltage is 0.7V, the potential on the anode side of the diode 10 is 4.6V, and no current flows through the voltage regulator diode 11, so no power loss occurs due to the addition of the voltage regulator diode.

一方、抵抗5が続接したとすると、前記定電圧
ダイオード11には電流が流れ、ダイオード10
のアノード側の電位は前記定電圧ダイオードによ
つて6V前後にクランプされる。
On the other hand, if the resistor 5 is connected, a current flows through the voltage regulator diode 11, and the diode 10
The potential on the anode side of is clamped to around 6V by the voltage regulator diode.

このとき、出力端子bに現われる電圧は4V前
後となり、定常時の2倍以下の値である。
At this time, the voltage appearing at the output terminal b is around 4V, which is less than twice the normal value.

InSbホール素子では定格の2倍以下の電圧で
はよほど長期にわたつて使用しない限り破壊する
ことはない。
InSb Hall elements will not be destroyed unless used for a very long period of time at a voltage less than twice the rated value.

したがつて第2図の回路は負荷への過電圧印加
に対する保護機能を備えていることになり、しか
も、保護機能をもたせることによる電流消費の増
大は皆無である。
Therefore, the circuit shown in FIG. 2 has a protection function against the application of overvoltage to the load, and there is no increase in current consumption due to the provision of the protection function.

なお、負荷として接続される半導体素子は
InSbホール素子に限定される訳ではなく、同様
の保護を必要とするレーザダイオードや他の半導
体素子であつても良い。
Note that the semiconductor element connected as a load is
It is not limited to InSb Hall elements, but may also be laser diodes or other semiconductor elements that require similar protection.

また、第2図において、電流供給回路80は抵
抗などの他の電流供給手段であつても良し、
NPNトランジスタ60、PNPトランジスタ70
は必らずしもダーリントン接続される必要はな
く、最大出力電圧がさらに高くても良い場合には
ダイオード10を省くことも出来る。
Further, in FIG. 2, the current supply circuit 80 may be other current supply means such as a resistor,
NPN transistor 60, PNP transistor 70
does not necessarily need to be connected in a Darlington manner, and if a higher maximum output voltage is acceptable, the diode 10 can be omitted.

以上の様に本発明の電源装置は、コレクタ側か
ら受電してエミツタ側から負荷に給電するNPN
トランジスタ60と、該NPNトランジスタのベ
ースにバイアス電流を供給する電流供給手段(電
流供給回路80に相当)と、前記電流供給手段か
ら前記NPNトランジスタのベースに至る線路上
にエミツタが接続され、コレクタがマイナス側給
電線路に接続されたPNPトランジスタ70と、
定電位点の電圧(安定化された電圧)を分圧して
前記PNPトランジスタのベースに印加する電圧
分割手段(電圧分割回路90に相当)と、前記電
流供給手段から前記NPNトランジスタのベース
に至る線路とマイナス側給電線路の間に接続され
た定電圧ダイオード11を備え、前記電圧分割手
段の分割比が誤まつて設定されたときには出力電
圧が前記定電圧ダイオードでクランプされて負荷
に過電圧が供給されない様に構成するとともに、
正常動作時には前記定電圧ダイオードに電流が流
れない様に前記分割比を設定したことを特徴とす
るもので、その結果、きわめて簡単な回路構成
で、しかも消費電流を増大させることなく過電圧
に対する保護機能をもたせることが出来るなど、
大なる効果を奏する。
As described above, the power supply device of the present invention is an NPN that receives power from the collector side and supplies power to the load from the emitter side.
A transistor 60, a current supply means (corresponding to the current supply circuit 80) for supplying a bias current to the base of the NPN transistor, an emitter connected to a line from the current supply means to the base of the NPN transistor, and a collector connected to the base of the NPN transistor. A PNP transistor 70 connected to the negative feed line,
Voltage dividing means (corresponding to the voltage dividing circuit 90) that divides the voltage at a constant potential point (stabilized voltage) and applies it to the base of the PNP transistor, and a line from the current supply means to the base of the NPN transistor. and a voltage regulator diode 11 connected between the voltage dividing means and the negative power supply line, and when the division ratio of the voltage dividing means is incorrectly set, the output voltage is clamped by the voltage regulator diode, and no overvoltage is supplied to the load. In addition to configuring the
The device is characterized in that the division ratio is set so that no current flows through the constant voltage diode during normal operation.As a result, the circuit configuration is extremely simple, and the protection function against overvoltage can be achieved without increasing current consumption. For example, it is possible to have
It has a great effect.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来例を示す回路結線路、第2図は本
発明の一実施例を示す回路結線図である。 1……ホール素子(負荷)、2,3……電源、
11……定電圧ダイオード、60……NPNトラ
ンジスタ、70……PNPトランジスタ、80…
…電流供給回路、90……電圧分割回路、100
B……IC。
FIG. 1 is a circuit connection diagram showing a conventional example, and FIG. 2 is a circuit connection diagram showing an embodiment of the present invention. 1... Hall element (load), 2, 3... Power supply,
11... Constant voltage diode, 60... NPN transistor, 70... PNP transistor, 80...
...Current supply circuit, 90...Voltage division circuit, 100
B...IC.

Claims (1)

【特許請求の範囲】[Claims] 1 コレクタ側から受電してエミツタ側から負荷
に給電するNPNトランジスタと、該NPNトラン
ジスタのベースにバイアス電流を供給する電流供
給手段と、前記電流供給手段から前記NPNトラ
ンジスタのベースに至る線路にエミツタが接続さ
れたPNPトランジスタと、定電位点の電圧を分
圧して前記PNPトランジスタのベースに印加す
る電圧分割手段と、前記電流供給手段から前記
NPNトランジスタのベースに至る線路とマイナ
ス側給電線路の間に接続された定電圧ダイオード
を備え、前記電圧分割手段の分割比が誤まつて設
定されたときには出力電圧が前記定電圧ダイオー
ドでクランプされて負荷に過電圧が供給されない
様に構成するとともに、正常動作時には前記定電
圧ダイオードに電流が流れない様に前記電圧分割
手段の分割比を設定したことを特徴とする電源装
置。
1. An NPN transistor that receives power from the collector side and supplies power to the load from the emitter side, a current supply means for supplying a bias current to the base of the NPN transistor, and an emitter on a line from the current supply means to the base of the NPN transistor. A connected PNP transistor, voltage dividing means for dividing a voltage at a constant potential point and applying it to the base of the PNP transistor,
A constant voltage diode is connected between the line leading to the base of the NPN transistor and the negative power supply line, and when the division ratio of the voltage dividing means is set incorrectly, the output voltage is clamped by the constant voltage diode. A power supply device characterized in that the power supply device is configured so that no overvoltage is supplied to the load, and the division ratio of the voltage dividing means is set so that no current flows through the constant voltage diode during normal operation.
JP14125281A 1981-09-07 1981-09-07 Power supply device Granted JPS5843014A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14125281A JPS5843014A (en) 1981-09-07 1981-09-07 Power supply device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14125281A JPS5843014A (en) 1981-09-07 1981-09-07 Power supply device

Publications (2)

Publication Number Publication Date
JPS5843014A JPS5843014A (en) 1983-03-12
JPH0150925B2 true JPH0150925B2 (en) 1989-11-01

Family

ID=15287597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14125281A Granted JPS5843014A (en) 1981-09-07 1981-09-07 Power supply device

Country Status (1)

Country Link
JP (1) JPS5843014A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6335118U (en) * 1986-08-19 1988-03-07
JPH01177716A (en) * 1988-01-08 1989-07-14 Nec Corp Output circuit
JPH0420426U (en) * 1990-06-13 1992-02-20

Also Published As

Publication number Publication date
JPS5843014A (en) 1983-03-12

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