JPH01500228A - 近バンドギャップ輻射変調空間光変調器 - Google Patents
近バンドギャップ輻射変調空間光変調器Info
- Publication number
- JPH01500228A JPH01500228A JP62504984A JP50498487A JPH01500228A JP H01500228 A JPH01500228 A JP H01500228A JP 62504984 A JP62504984 A JP 62504984A JP 50498487 A JP50498487 A JP 50498487A JP H01500228 A JPH01500228 A JP H01500228A
- Authority
- JP
- Japan
- Prior art keywords
- matrix
- quantum wells
- readout
- voltage source
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title claims description 37
- 230000005684 electric field Effects 0.000 claims description 81
- 229910052751 metal Inorganic materials 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 59
- 230000003287 optical effect Effects 0.000 claims description 57
- 239000004065 semiconductor Substances 0.000 claims description 34
- 238000005286 illumination Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims 11
- 238000003331 infrared imaging Methods 0.000 claims 3
- 239000003792 electrolyte Substances 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 43
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 28
- 239000004973 liquid crystal related substance Substances 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 230000002186 photoactivation Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000001443 photoexcitation Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229940059720 apra Drugs 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01716—Optically controlled superlattice or quantum well devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/12—Function characteristic spatial light modulator
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Liquid Crystal (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US880,217 | 1986-06-30 | ||
| US06/880,217 US4828368A (en) | 1986-06-30 | 1986-06-30 | Near bandgap radiation modulation spatial light modulators |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01500228A true JPH01500228A (ja) | 1989-01-26 |
Family
ID=25375755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62504984A Pending JPH01500228A (ja) | 1986-06-30 | 1987-05-26 | 近バンドギャップ輻射変調空間光変調器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4828368A (de) |
| EP (2) | EP0273050B1 (de) |
| JP (1) | JPH01500228A (de) |
| DE (1) | DE3787087T2 (de) |
| WO (1) | WO1988000358A2 (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4873439A (en) * | 1988-06-27 | 1989-10-10 | Massachusetts Institute Of Technology | X-ray detector |
| GB8821863D0 (en) * | 1988-09-03 | 1989-05-17 | Emi Plc Thorn | Infra-red radiation modifier |
| US5315430A (en) * | 1992-04-15 | 1994-05-24 | The United States Of America As Represented By The United States Department Of Energy | Strained layer Fabry-Perot device |
| US5274246A (en) * | 1992-05-04 | 1993-12-28 | The United States Of America As Represented By The Secretary Of The Air Force | Optical modulation and switching with enhanced third order nonlinearity multiple quantum well effects |
| US5510627A (en) * | 1994-06-29 | 1996-04-23 | The United States Of America As Represented By The Secretary Of The Navy | Infrared-to-visible converter |
| US5844711A (en) * | 1997-01-10 | 1998-12-01 | Northrop Grumman Corporation | Tunable spatial light modulator |
| US6005692A (en) * | 1997-05-29 | 1999-12-21 | Stahl; Thomas D. | Light-emitting diode constructions |
| US7196390B1 (en) | 1999-09-26 | 2007-03-27 | 3Dv Systems Ltd. | Solid state image wavelength converter |
| US6999106B2 (en) * | 2001-04-30 | 2006-02-14 | Intel Corporation | Reducing the bias on silicon light modulators |
| JP3589662B2 (ja) * | 2002-01-07 | 2004-11-17 | 松下電器産業株式会社 | 面型光変調器およびその製造方法 |
| US20040208626A1 (en) * | 2002-07-23 | 2004-10-21 | Nishimura Ken A. | Coherent equalization of optical signals |
| US7382512B2 (en) * | 2005-10-26 | 2008-06-03 | Zhizhang Chen | Resistivity phase change material |
| JP4247263B2 (ja) * | 2006-09-29 | 2009-04-02 | 株式会社日立製作所 | 半導体放射線検出器および放射線検出装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0155802A2 (de) * | 1984-03-14 | 1985-09-25 | AT&T Corp. | Nichtlineare bistabile optische Vorrichtung |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2157060A6 (de) * | 1971-10-15 | 1973-06-01 | Labo Electronique Physique | |
| US4549788A (en) * | 1983-01-03 | 1985-10-29 | At&T Bell Laboratories | Intensity of a light beam applied to a layered semiconductor structure controls the beam |
| US4525687A (en) * | 1983-02-28 | 1985-06-25 | At&T Bell Laboratories | High speed light modulator using multiple quantum well structures |
| US4528464A (en) * | 1983-02-28 | 1985-07-09 | At&T Bell Laboratories | Degenerate four-wave mixer using multiple quantum well structures |
| US4566935A (en) * | 1984-07-31 | 1986-01-28 | Texas Instruments Incorporated | Spatial light modulator and method |
-
1986
- 1986-06-30 US US06/880,217 patent/US4828368A/en not_active Expired - Lifetime
-
1987
- 1987-05-26 JP JP62504984A patent/JPH01500228A/ja active Pending
- 1987-05-26 WO PCT/US1987/001193 patent/WO1988000358A2/en active IP Right Grant
- 1987-05-26 EP EP87905484A patent/EP0273050B1/de not_active Expired - Lifetime
- 1987-05-26 EP EP19920104221 patent/EP0494086A3/en not_active Withdrawn
- 1987-05-26 DE DE87905484T patent/DE3787087T2/de not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0155802A2 (de) * | 1984-03-14 | 1985-09-25 | AT&T Corp. | Nichtlineare bistabile optische Vorrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1988000358A2 (en) | 1988-01-14 |
| EP0273050A1 (de) | 1988-07-06 |
| EP0494086A2 (de) | 1992-07-08 |
| EP0494086A3 (en) | 1992-10-14 |
| WO1988000358A3 (en) | 1988-01-28 |
| US4828368A (en) | 1989-05-09 |
| DE3787087T2 (de) | 1994-03-31 |
| DE3787087D1 (en) | 1993-09-23 |
| EP0273050B1 (de) | 1993-08-18 |
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