JPH0139571B2 - - Google Patents
Info
- Publication number
- JPH0139571B2 JPH0139571B2 JP57108340A JP10834082A JPH0139571B2 JP H0139571 B2 JPH0139571 B2 JP H0139571B2 JP 57108340 A JP57108340 A JP 57108340A JP 10834082 A JP10834082 A JP 10834082A JP H0139571 B2 JPH0139571 B2 JP H0139571B2
- Authority
- JP
- Japan
- Prior art keywords
- bso
- light
- bgo
- ppm
- hologram
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
- G03C1/725—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705 containing inorganic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Holo Graphy (AREA)
Description
【発明の詳細な説明】
本発明は高感度で書き替え可能なホログラム記
録材料に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a highly sensitive and rewritable hologram recording material.
ArレーザやHe―Neレーザを用いたホログラ
ムの記録再生は、高密度の画像処理や画像メモリ
ーとして有用であり、主として写真乾板を用いて
行われている。しかし写真乾板は現象、定着の工
程が必要であり、リアルタイムの画像処理には適
していない。また再使用できないことも欠点であ
る。 Recording and reproducing holograms using Ar lasers or He-Ne lasers is useful for high-density image processing and image memory, and is mainly performed using photographic plates. However, photographic plates require development and fixing processes, and are not suitable for real-time image processing. Another disadvantage is that it cannot be reused.
リアルタイムで再使用可能な材料として、サー
モプラスチツクを用いた記録材料が使用されてい
るが、熱的変形を利用するため、寿命が短く、湿
気に弱い等の欠点がある。 Recording materials using thermoplastics are used as materials that can be reused in real time, but because they utilize thermal deformation, they have short lifespans and are susceptible to moisture.
これに対して最近の研究によつて誘電体材料た
とえばLiNbO3，SBNなどの材料は不純物を添加
することにより、リアルタイムで使用可能なホロ
グラム記録材料となることが知られている。 On the other hand, recent research has revealed that by adding impurities to dielectric materials such as LiNbO 3 and SBN, they can be used as hologram recording materials that can be used in real time.
本発明のビスマス．シリコン．オキサイド
（Bi12SiO20，以下BSOと略す）、ビスマス．ゲル
マニウム．オキサイド（Bi12GeO20、以下BGOと
略す）は何ら元素を添加しなくとも顕著な光伝導
効果を示すものであり、BSOを例にとれば第１
図ａに示すようにBSO１に参照光２と物体３の
物体光４が照射されると干渉縞５が書き込まれ、
その濃淡に応じて自由電子が発生する。特に
BSO，BGOは紫〜青色光に強い感度を持つ。 Bismuth of the present invention. silicon. Oxide (Bi 12 SiO 20 , hereinafter abbreviated as BSO), bismuth. germanium. Oxide (Bi 12 GeO 20 , hereinafter abbreviated as BGO) shows a remarkable photoconductive effect without adding any elements, and taking BSO as an example, it is the first
As shown in Figure a, when the BSO 1 is irradiated with the reference beam 2 and the object beam 4 of the object 3, interference fringes 5 are written,
Free electrons are generated depending on the density. especially
BSO and BGO have strong sensitivity to violet to blue light.
発生した自由電子は電源１０によつて干渉縞と
直交する方向に印加された電界によりドリフトを
起こしトラツプレベルに捕獲され、残された正電
荷とともに干渉縞の濃淡に対応した空間電荷分布
を形成する。この空間電荷分布は、BSO，BGO
結晶の持つ電気光学効果により空間的な屈折率分
布を形成するため第１図ｂに示すように再生光６
を照射すれば、通常のホログラムと同様に再生像
７を得る。再生光６はBSO，BGOの光伝導効果
を生じさせない赤〜赤外光が良い。消去するため
には電源１０の電圧を０にしてBSO全面に参照
光のみを照射すればよい。なお、８は透過光、９
は回折光である。 The generated free electrons drift due to the electric field applied by the power supply 10 in a direction perpendicular to the interference fringes and are captured at the trap level, and together with the remaining positive charges, form a space charge distribution corresponding to the density of the interference fringes. This space charge distribution is BSO, BGO
In order to form a spatial refractive index distribution due to the electro-optic effect of the crystal, the reproduction light 6 is
When irradiated with , a reconstructed image 7 is obtained in the same way as a normal hologram. The reproduction light 6 is preferably red to infrared light that does not cause the photoconductive effect of BSO and BGO. In order to erase, it is sufficient to turn the voltage of the power supply 10 to 0 and irradiate only the reference light onto the entire surface of the BSO. In addition, 8 is transmitted light, 9
is the diffracted light.
以上のプロセスは全く電子的なものであり、記
録再生消去をリアルタイムで繰り返し行うことが
できる。 The above process is completely electronic, and recording, reproducing and erasing can be repeated in real time.
このように本来高感度なBSO，BGOの感度を
さらに高めることは、リアルタイム処理の速度を
向上させる上で重要な技術である。 Further increasing the sensitivity of BSO and BGO, which are inherently highly sensitive, is an important technology for improving the speed of real-time processing.
発明者らは、BSO，BGOのホログラムとして
の動作機構について種々の検討を加えた結果、記
録光によつて発生した自由電子がある特別なトラ
ツプ準位において有効にトラツプされる確率が高
いほど感度Ｓと最大回折効率（ηmax）ともに向
上する可能性があるものとの指針を得た。 As a result of various studies on the operating mechanism of BSO and BGO as holograms, the inventors found that the higher the probability that free electrons generated by recording light will be effectively trapped at a particular trap level, the higher the sensitivity. A guideline was obtained that shows the possibility of improving both S and maximum diffraction efficiency (ηmax).
従つて特定のドーパントを添加したBSOの露
光時間と回折効率の関係を測定したところ、第２
図に示すように、Feを10ppm添加することによ
り、感度が２倍向上し、最大の回折効率も２倍向
上することを発見した。さらにBGOについても
全く同じ効果があることを確認した。感度が２倍
になるということは処理時間を1/2に短縮できる
ことになり、システムの効率やコストパーホーマ
ンスが倍向上するという実用上の有用性を果すも
のである。 Therefore, when we measured the relationship between the exposure time and diffraction efficiency of BSO doped with a specific dopant, we found that the second
As shown in the figure, we discovered that by adding 10 ppm of Fe, the sensitivity was doubled and the maximum diffraction efficiency was also doubled. Furthermore, it was confirmed that BGO had exactly the same effect. Doubling the sensitivity means that the processing time can be cut in half, and this has practical utility in that the efficiency and cost performance of the system are doubled.
Feの濃度を10ppmとすることは、10ppmより
少ないと効果が小さく、10ppmより多いと結晶の
透過率が低下して再生像が極端に暗くなるからで
ある。 The Fe concentration is set to 10 ppm because if it is less than 10 ppm, the effect will be small, and if it is more than 10 ppm, the transmittance of the crystal will decrease and the reproduced image will become extremely dark.
第１図はBSOホログラム記憶デバイスの動作
原理説明図でａ図はホログラムの記憶説明図、ｂ
図はホログラムの再生説明図、第２図はBSO無
添加とBSO―Fe（10ppm）ホログラム記憶デバイ
スの露光時間と回折効率の関係比較図表である。
１…BSO、２…参照光、３…物体、４…物体
光、５…干渉縞、６…再生光、７…再生像、８…
透過光、９…回折光、１０…電源。
Figure 1 is a diagram explaining the operating principle of the BSO hologram storage device, Figure a is a diagram explaining hologram storage, and Figure b
The figure is an explanatory diagram of hologram reproduction, and Figure 2 is a comparison chart of the relationship between exposure time and diffraction efficiency for BSO-free and BSO-Fe (10 ppm) hologram storage devices. 1...BSO, 2...Reference light, 3...Object, 4...Object light, 5...Interference fringes, 6...Reproduction light, 7...Reproduction image, 8...
Transmitted light, 9... Diffracted light, 10... Power supply.
Claims (1)
（Bi12SiO20）もしくはビスマス．ゲルマニウム．
オキサイド（Bi12GeO20）に鉄元素を10ppm添加
したことを特徴とするホログラム記録材料。1 Bismuth. silicon. Oxide (Bi 12 SiO 20 ) or bismuth. germanium.
A hologram recording material characterized by adding 10 ppm of iron to oxide (Bi 12 GeO 20 ).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10834082A JPS59151A (en) | 1982-06-25 | 1982-06-25 | Hologram recording material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10834082A JPS59151A (en) | 1982-06-25 | 1982-06-25 | Hologram recording material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59151A JPS59151A (en) | 1984-01-05 |
| JPH0139571B2 true JPH0139571B2 (en) | 1989-08-22 |
Family
ID=14482203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10834082A Granted JPS59151A (en) | 1982-06-25 | 1982-06-25 | Hologram recording material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59151A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2536086B2 (en) * | 1988-09-02 | 1996-09-18 | 味の素株式会社 | Manufacturing method of tofu that can be stored at room temperature for a long time |
| JP4839100B2 (en) * | 2006-03-08 | 2011-12-14 | ヤマトプロテック株式会社 | Fire extinguisher safety tap |
-
1982
- 1982-06-25 JP JP10834082A patent/JPS59151A/en active Granted
Non-Patent Citations (1)
| Title |
|---|
| APPLIED PHYSICS LETTERS * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59151A (en) | 1984-01-05 |
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