JPH01321442A - Electrode element for charging device and manufacture of the same - Google Patents
Electrode element for charging device and manufacture of the sameInfo
- Publication number
- JPH01321442A JPH01321442A JP15480088A JP15480088A JPH01321442A JP H01321442 A JPH01321442 A JP H01321442A JP 15480088 A JP15480088 A JP 15480088A JP 15480088 A JP15480088 A JP 15480088A JP H01321442 A JPH01321442 A JP H01321442A
- Authority
- JP
- Japan
- Prior art keywords
- charging device
- electrode
- electrode element
- film
- semiconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010408 film Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 10
- 239000011787 zinc oxide Substances 0.000 abstract description 5
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 3
- 239000011147 inorganic material Substances 0.000 abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- -1 oxygen ions Chemical class 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract 4
- 108091008695 photoreceptors Proteins 0.000 description 24
- 239000007787 solid Substances 0.000 description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 108020003175 receptors Proteins 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910000410 antimony oxide Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000004512 die casting Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Electrostatic Charge, Transfer And Separation In Electrography (AREA)
- Elimination Of Static Electricity (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子写真プロセスを応用した複写機やプリン
ターに適用することができる帯電装置用電極素子及びそ
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an electrode element for a charging device that can be applied to copying machines and printers using an electrophotographic process, and a method for manufacturing the same.
従来の技術
従来、電子写真複写機のような電子写真装置においては
、第５図及び第６図に示すようなコロトロン帯電装置が
一般に使用されている。2. Description of the Related Art Conventionally, in an electrophotographic apparatus such as an electrophotographic copying machine, a corotron charging device as shown in FIGS. 5 and 6 has been generally used.
コロトロン帯電装置は、断面はぼコの字形をなすシール
ドケース２２の両端部に、絶縁ブロック２３を設けて、
この絶縁ブロック２３の間に、上記シールドケース２２
のほぼ中央に位置するように放電ワイヤー２４を張架し
た構成を有するもので、この放電ワイヤー２４に、４０
００〜８０００ Ｖの高電圧を印加することにより、感
光体などの電荷受容体３との間で、コロナ放電を生じさ
せるようになっており、このコロナ放電により発生した
イオンが感光体３に付着して、感光体が帯電される。The corotron charging device includes insulating blocks 23 provided at both ends of a shield case 22 having a rectangular cross section.
Between this insulating block 23, the shield case 22
It has a structure in which a discharge wire 24 is stretched so as to be located approximately in the center of the discharge wire 24.
By applying a high voltage of 00 to 8000 V, corona discharge is generated between the charge receptor 3 such as a photoreceptor, and ions generated by this corona discharge adhere to the photoreceptor 3. The photoreceptor is then charged.
また、放電ワイヤー２４を囲むシールドケース２２は、
放電ワイヤー２４との間に一定の空間距離を維持するこ
とにより、放電ワイヤー２４の表面に形成された電界を
強め、かつ安定化させる機能を有している。Moreover, the shield case 22 surrounding the discharge wire 24 is
By maintaining a certain spatial distance from the discharge wire 24, it has the function of strengthening and stabilizing the electric field formed on the surface of the discharge wire 24.
しかしながら、このコロトロンは、次のような欠点を有
している。まず、機械的強度の低い細いワイヤーを張架
するため、放電による（騒動などにより、ワイヤーが切
れ易く、また、その交換に手数がかかるなどの不都合、
がある。However, this corotron has the following drawbacks. First, since thin wires with low mechanical strength are strung, the wires tend to break easily due to electrical discharge (commotion, etc.), and it takes time to replace them.
There is.
また、別の問題として、放電ワイヤーとシールドケース
を近付けようとすると、両者の間で火花放電が発生する
ため、コロ１〜ロンの形を小さくできないという欠点が
必る。これは、両者を近付けることにより、空間インピ
ーダンスが低くなり、電流が制御できなくなるからであ
る。Another problem is that when the discharge wire and the shield case are brought close to each other, spark discharge occurs between them, which inevitably results in the disadvantage that the shapes of the rollers 1 to 1 cannot be made smaller. This is because by bringing the two closer together, the spatial impedance becomes lower and the current becomes uncontrollable.
更に別の問題として、放電時に感光体３以外にシールド
ケース２２にも電流が流れるため、放電電流か余分に流
れ、その結果、高圧電源か大型化して、価格が高くなる
と共に、放電電流が多いためにオゾンの発生量も多くな
って、周囲環境汚染の原因となる不都合もめる。Another problem is that during discharge, current flows not only to the photoreceptor 3 but also to the shield case 22, so an extra discharge current flows.As a result, the high-voltage power supply becomes larger, the price becomes higher, and the discharge current increases. As a result, the amount of ozone generated increases, causing inconvenience as it causes pollution of the surrounding environment.
この様な問題点を解決するために第７図に示すような半
導電性固体電極２５を感光体３に近接させ、半導電性固
体電極の背面に給電電極２６を配設し、電源４より給電
を行う帯電装置が提案された（特開昭６２−２９６１７
４号公報）。この帯電装置は、電極と感光体３の空隙で
大きな電流が流れようとするのを半導電性固体電極２５
の抵抗が制御するため、火花放電やアーク放電が起こら
ず安定したコロナ放電を行うことができる。In order to solve such problems, a semiconductive solid electrode 25 as shown in FIG. A charging device for supplying electricity was proposed (Japanese Patent Application Laid-Open No. 62-29617
Publication No. 4). This charging device uses a semiconductive solid electrode 25 to prevent a large current from flowing in the gap between the electrode and the photoreceptor 3.
Since the resistance is controlled, stable corona discharge can be performed without causing spark discharge or arc discharge.
発明が解決しようとする課題
この様な半導電性固体電極を用いた帯電装置は、従来の
帯電装置にはない長所かめる半面、以下のような問題点
を有している。Problems to be Solved by the Invention Although charging devices using such semiconductive solid electrodes have advantages that conventional charging devices do not have, they also have the following problems.
まず、半導電性固体電極は、その厚さが薄いと電極自体
が絶縁破壊を起こして帯電装置として使用できなくなる
。したがって、絶縁破壊を起こさないおる値以上の厚さ
が要求される。多くの半導電性＠極り料を試験した結果
、厚さが２００１Ｉｉ以上あれば、絶縁破壊しないこと
が明らかになった。First, if a semiconductive solid electrode is thin, the electrode itself will suffer dielectric breakdown, making it unusable as a charging device. Therefore, the thickness is required to be at least a value that does not cause dielectric breakdown. As a result of testing many semiconductive @pole materials, it has become clear that if the thickness is 2001Ii or more, there will be no dielectric breakdown.
ところが、この厚さで使用できる半導電性固体電極は、
材料が有機物でおるか、又は無機物の場合には、焼結タ
イプのセラミックス或いは一部のガラスに限られている
。有機物は実用上使用できる材料がその電気伝導がイオ
ン伝導であるため、電気抵抗の経時的変化や環境による
変化が大きいという問題を有しており、一方、焼結によ
り作られるセラミックスは高温の為、平面度を１００μ
ｍ以下にすることが困難であり、また、平面度を出すた
めに研磨などを行うと、コストが大きくなる欠点がおっ
た。平面度が１００ｍ以上になると、感光体と半導電性
固体電極の距離が場所により変わるため、帯電電位か不
均一になり、その結果、画像濃度が不均一になる。また
、ガラスは平面度を小さくできるが、電気伝導が表面の
吸着水の水和イオンによりなされるため、環境による抵
抗の変化が大きく、実用上使用できなかった。However, semiconductive solid electrodes that can be used at this thickness are
If the material is organic or inorganic, it is limited to sintered ceramics or some types of glass. Since the electrical conductivity of organic materials that can be practically used is ionic conduction, there is a problem in that the electrical resistance changes greatly over time and due to the environment.On the other hand, ceramics made by sintering have a problem of large changes due to the high temperature. , the flatness is 100μ
It is difficult to reduce the thickness to less than m, and if polishing or the like is performed to obtain flatness, the cost increases. When the flatness exceeds 100 m, the distance between the photoreceptor and the semiconductive solid electrode varies depending on the location, resulting in non-uniform charging potential and, as a result, non-uniform image density. Furthermore, although the flatness of glass can be reduced, since electrical conduction is achieved by hydrated ions of water adsorbed on the surface, the resistance changes greatly depending on the environment, making it impractical for practical use.
本発明は、この様な問題点に濫みてなされたものである
。The present invention has been made in view of these problems.
したかって本発明の目的は、上記のような問題を解決し
、安定した帯電装置を提供することにおる。Therefore, an object of the present invention is to solve the above-mentioned problems and provide a stable charging device.
課題を解決するための手段及び作用
本発明は、帯電装置用電極素子に関するもので、絶縁性
基体上に半導電性膜を成膜してなることを特徴とする。Means and Effects for Solving the Problems The present invention relates to an electrode element for a charging device, and is characterized in that it is formed by forming a semiconductive film on an insulating substrate.
本発明の帯電装置用電極素子において、半導電性膜は平
面性がよいものであることが望まれるが、そのための材
料としては、電子伝導性又は酸素イオン伝導性で熱処理
や研磨を行わずに作製される無機材料、例えば、アモル
ファスＳｉ、酸化亜鉛、酸化アンチモン、酸化鉛、ジル
コニア、酸化チタン等が好ましく使用できる。これ等の
無機材料は平面性のよい基体上に、蒸着ぞの他の適当な
手段によって薄膜状に成膜される。その場合、半導電性
膜の表面抵抗が概ね１ＭΩから１００ ＭΩの範囲にあ
るのが好ましい。In the electrode element for a charging device of the present invention, it is desirable that the semiconducting film has good flatness, and the material for this purpose should be one that has electron conductivity or oxygen ion conductivity and that does not require heat treatment or polishing. Inorganic materials produced, such as amorphous Si, zinc oxide, antimony oxide, lead oxide, zirconia, titanium oxide, etc., can be preferably used. These inorganic materials are formed into a thin film on a flat substrate by vapor deposition or other suitable means. In that case, it is preferable that the surface resistance of the semiconductive film is approximately in the range of 1 MΩ to 100 MΩ.
また、半導電性膜は薄膜であり、絶縁耐圧が少ないので
、基体としては絶縁性の材料より構成された絶縁性基体
が使用される。Further, since the semiconductive film is a thin film and has a low dielectric strength, an insulating base made of an insulating material is used as the base.
その場合、絶縁性基体は、金属基板上に絶縁層が設けら
れたものでおってもよい。また絶縁性基体は、シート状
であってもよい。In that case, the insulating substrate may be one in which an insulating layer is provided on a metal substrate. Further, the insulating substrate may be in the form of a sheet.
本発明の帯電装置用電極素子は、半導電性膜が絶縁性基
体の上に設けられているために、給電電極を感光体に対
して反対側に設けることができない。そこで、本発明の
帯電装置用電極素子は、給電用の電極を半導電性膜の末
端に設けることが必要となる。In the electrode element for a charging device of the present invention, since the semiconductive film is provided on the insulating substrate, the power supply electrode cannot be provided on the opposite side to the photoreceptor. Therefore, in the electrode element for a charging device of the present invention, it is necessary to provide a power feeding electrode at the end of the semiconductive film.
ところで、半導電性固体電極を用いた平面型帯電器では
、画像の濃度のばらつきが発生することかしばしばある
。その原因は、半導電性固体電極と感光体とのギャップ
にばらつきが現れることによる。平面型帯電器では、ギ
ャップの電圧がギャップの大きざに従う性質を有してい
る。すなわち、ギャップが小さいところではギャップの
電圧が小さく、ギャップの電圧が大きなところではギャ
ップの電圧が大きい性質がおる。したがって、一つの電
極でギャップに大小がおるとギャップの小さいところで
は感光体の帯電電位が高くなり、ギャップの大きなとこ
ろでは感光体の帯電電位は小さくなる。そこで、ギャッ
プのばらつきはできる限り小さいことが望まれるが、実
験の結果、ギャップのばらつきが３０〜７０μｓの範囲
又はそれ以下であれば、画像濃度にばらつきは現れ難い
ことが判明した。したがって、本発明においては、絶縁
性基体の表面は、上記のような平面度を有するものが好
適に使用される。Incidentally, in a planar charger using a semiconductive solid electrode, variations in image density often occur. The reason for this is that variations appear in the gap between the semiconductive solid electrode and the photoreceptor. In a planar charger, the voltage across the gap follows the size of the gap. That is, the gap voltage is small where the gap is small, and the gap voltage is large where the gap voltage is large. Therefore, if there are gaps of different sizes in one electrode, the charged potential of the photoreceptor becomes high where the gap is small, and the charged potential of the photoreceptor becomes small where the gap is large. Therefore, it is desired that the variation in the gap be as small as possible, but as a result of experiments, it has been found that if the variation in the gap is in the range of 30 to 70 μs or less, variations in image density are unlikely to appear. Therefore, in the present invention, the surface of the insulating substrate having the flatness as described above is preferably used.
本発明において、絶縁性基体を樹脂材料のみより形成さ
せる場合には、半導電性膜の蒸着時に、平面度が上記の
範囲を越える反りが生じることがあるので、絶縁性基体
としては、金属基板上に絶縁層を設けてなるものを使用
するのが好ましい。In the present invention, when the insulating substrate is formed only from a resin material, warping may occur when the flatness exceeds the above range during vapor deposition of the semiconductive film. It is preferable to use one provided with an insulating layer thereon.
本発明の帯電装置用電極素子を製造するには、次のよう
な方法で製造するのが好ましい。すなわち、第３図に示
すように、絶縁層７上に半導電性膜１を形成し、モの上
に接触電極５１〜５５を平行に複数本形成した後、この
接触電極に沿って１１〜、Ｉ！５の位置で切断して複数
のシート状物を得、それ等をぞれぞれ、平面性のよい基
板上に接着剤を用いて貼り合わせて、複数の帯電装置用
電極素子を製造する。In order to manufacture the electrode element for a charging device of the present invention, it is preferable to manufacture it by the following method. That is, as shown in FIG. 3, a semiconductive film 1 is formed on an insulating layer 7, a plurality of contact electrodes 51 to 55 are formed in parallel on the insulating layer 7, and then a plurality of contact electrodes 51 to 55 are formed in parallel along the contact electrodes. , I! A plurality of sheet-like products are obtained by cutting at the position 5, and each of the sheets is pasted onto a substrate with good flatness using an adhesive to produce a plurality of electrode elements for a charging device.
第４図は、本発明の帯電装置用電極素子を用いた電子写
真装置の概略構成図である。本発明の帯電装置用電極素
子は、感光体用帯電器２１、転写用帯電器１４、剥離用
帯電器１７、除電用帯電器１９等に適用することができ
る。第４図において、原稿台１１に置かれた原稿１０が
照明ランプ１２により露光され、その画像がレンズ９を
通して感光体用帯電器２１で帯電された感光体３上に投
影され、静電潜像が形成される。この静電ｍ＠に現像器
１３で現像剤を何首させて可視像を得る。次に用紙カセ
ット１５から送られた用紙１６を、感光体に重ねて、転
写用帯電器１４でイオ゛ンを与えることにより現像剤が
用紙に転写される。続いて剥離用帯電器１７で用紙の電
荷を除電し、用紙を感光体から剥離する。現像剤は定着
器１８で用紙に定着されて複写画像となる。FIG. 4 is a schematic diagram of an electrophotographic apparatus using the electrode element for a charging device of the present invention. The electrode element for a charging device according to the present invention can be applied to a photoreceptor charger 21, a transfer charger 14, a peeling charger 17, a static elimination charger 19, and the like. In FIG. 4, a document 10 placed on a document table 11 is exposed to light by an illumination lamp 12, and its image is projected through a lens 9 onto a photoconductor 3 charged by a photoconductor charger 21, resulting in an electrostatic latent image. is formed. A visible image is obtained by applying a developer to this electrostatic charge m@ in a developing device 13. Next, the paper 16 sent from the paper cassette 15 is placed on the photoreceptor, and the transfer charger 14 applies ions to transfer the developer onto the paper. Subsequently, the charge on the paper is removed by a peeling charger 17, and the paper is peeled off from the photoreceptor. The developer is fixed on the paper by a fixing device 18 to form a copied image.
感光体上の電荷は除電用帯電器１９により除電され、更
に残った感光体上の現像剤は、クリーナー２０によりク
リーニングされる。Charges on the photoreceptor are removed by a charger 19, and developer remaining on the photoreceptor is cleaned by a cleaner 20.
実施例
第１図は、本発明の帯電装置用電極素子の基本構成を説
明するもので、帯電装置用電極素子は、絶縁性基板２上
に半導電性膜１が成膜された構造を有している。半導電
性膜１の末端には、給電電極６と接触する接触電極５が
設けられている。なお、４は電源であり、３は感光体で
必る。Embodiment FIG. 1 explains the basic structure of an electrode element for a charging device according to the present invention. The electrode element for a charging device has a structure in which a semiconductive film 1 is formed on an insulating substrate 2. are doing. A contact electrode 5 is provided at the end of the semiconductive film 1 to make contact with the power supply electrode 6 . Note that 4 is a power source and 3 is a photoreceptor.
上記構成の帯電装置用電極素子において、絶縁性基板を
構成する材料は、体積抵抗率が少なくとも１０１３Ω・
ｃｍで市り、蒸着やイオンブレーティングに必要な５０
〜８０℃の温度により変形が少なく、また着膜強度が高
いことが要求される。それに適合する材料としては、例
えばポリカーボネート、アクリル樹脂、ポリエステル等
の樹脂材料がめげられる。In the electrode element for a charging device having the above configuration, the material constituting the insulating substrate has a volume resistivity of at least 1013Ω.
Available in cm, 50 mm required for vapor deposition and ion blating.
It is required that there is little deformation due to the temperature of ~80°C, and that the strength of the film is high. Examples of suitable materials include resin materials such as polycarbonate, acrylic resin, and polyester.
第２図は、本発明の他の実施例で必って、帯電装置用＠
極素子は、金属基板８上に絶縁性層７を設けてなる絶縁
性基板を使用し、その上に半導電性膜１が成膜されてい
る。FIG. 2 shows a charging device @
The pole element uses an insulating substrate consisting of an insulating layer 7 provided on a metal substrate 8, and a semiconductive film 1 is formed thereon.
次に、本発明を具体的な例をあげて説明する。Next, the present invention will be explained by giving specific examples.
例１
第１図に示される構成の帯電装置用電極素子を作製した
。すなわち、上記した樹脂材料よりなる絶縁性基板２の
上記の範囲の平面度を有する表面上に、真空蒸着法でｏ
、 ｏｉ〜０． Ｏ５ｐｐｍの燐を含むアモルファス３
ｉ膜よりなる半導電性膜１を表面抵抗約１ＭΩとなるよ
うに形成した。半導電性膜の端部には金を厚さ０．１〜
０．３μｍで、半導電性膜の上に幅約１＃となるように
蒸着して接触電極５を形成した。Example 1 An electrode element for a charging device having the configuration shown in FIG. 1 was manufactured. That is, on the surface of the insulating substrate 2 made of the above-mentioned resin material and having a flatness within the above-mentioned range, o
, oi~0. Amorphous 3 containing 05ppm phosphorus
A semiconductive film 1 made of an i-film was formed to have a surface resistance of about 1 MΩ. Gold is applied to the edge of the semiconductive film to a thickness of 0.1~
The contact electrode 5 was formed by vapor deposition with a thickness of 0.3 μm and a width of about 1# on the semiconductive film.
形成された帯電装置用電極素子を感光体３にギヤツブ約
３００μｍをおいて対向さけ、電源４から約−２５００
の電圧を印１ｔｆｌ シた。この電圧は、給電電極６か
ら接触電極５を通って半導電性膜１に印加され、それに
よって感光体が一７００■に帯電された。The formed electrode element for the charging device is placed opposite to the photoreceptor 3 with a gear lug of about 300 μm, and is connected to the power source 4 by about -2500 μm.
A voltage of 1tfl was applied. This voltage was applied to the semiconducting film 1 from the power supply electrode 6 through the contact electrode 5, thereby charging the photoreceptor to 1700 μm.
なお、比較のために半導電性膜の代わりに、金属よりな
る膜を形成したものを用いたところ、放電は安定せず、
画像には鱗状の模様が現れた。For comparison, when a film made of metal was used instead of the semiconductive film, the discharge was not stable.
A scale-like pattern appeared in the image.
例２
第２図に示される構成の帯電装置用電極素子を作製した
。すなわち、アルミニウムダイキャス１〜或いは亜鉛グ
イキャストで平面度３０μｍ以下に形成した基板の上に
、エポキシ樹脂を厚さｉｍになるように塗布し、硬化さ
せた。平面度は５０μｍ以下であった。更にその上に酸
化亜鉛を蒸着により膜厚０．１〜０．３μｍになるよう
に設け、例１におけると同様に金よりなる接触電極を設
けて帯電装置用電極素子を作製した。Example 2 An electrode element for a charging device having the configuration shown in FIG. 2 was manufactured. That is, an epoxy resin was applied to a thickness of im on a substrate formed by aluminum die casting 1 or zinc die casting to have a flatness of 30 μm or less, and was cured. The flatness was 50 μm or less. Furthermore, zinc oxide was deposited thereon to a thickness of 0.1 to 0.3 μm, and a contact electrode made of gold was provided in the same manner as in Example 1 to produce an electrode element for a charging device.
この帯電装置用電極素子を例１におけると同様に用いた
ところ、均一な電子写真画像を得ることができた。When this electrode element for a charging device was used in the same manner as in Example 1, a uniform electrophotographic image could be obtained.
酸化亜鉛の代わりに、酸化アンチモン又は酸化鉛の蒸着
膜を形成させた場合にも同様に均一な電子写真画像が得
られた。A uniform electrophotographic image was similarly obtained when a vapor-deposited film of antimony oxide or lead oxide was formed instead of zinc oxide.
また、酸化亜鉛膜の膜厚を変化させて表面抵抗を変えた
ところ、表面抵抗１ＭΩ〜１００Ωの範囲で均一な帯電
が可能でおった。Furthermore, when the surface resistance was changed by changing the thickness of the zinc oxide film, uniform charging was possible within a surface resistance range of 1 MΩ to 100Ω.
例３
膜厚１００μｍのポリエステルシートの上に酸化チタン
を膜厚０．１〜０．３μｍになるように蒸着して半導電
性膜を形成し、その上に第３図に示すように、金又はク
ロム等の接触電極５１〜５５を平行に複数本形成した。Example 3 A semiconductive film was formed by depositing titanium oxide to a thickness of 0.1 to 0.3 μm on a polyester sheet with a film thickness of 100 μm. Alternatively, a plurality of contact electrodes 51 to 55 made of chromium or the like were formed in parallel.
この接触電極に沿って９１〜．Ｉ！５の位置で切断して
絶縁層７及び半導電性簿膜１よりなる複数のシート状物
を得た後、それ等をそれぞれ、平面性のよいステンレス
鋼板の上に粘度の小さい接着剤を用いて貼り合わせ、多
数の帯電装置用電極素子を作製した。91~ along this contact electrode. I! After cutting at the position 5 to obtain a plurality of sheet-like materials consisting of the insulating layer 7 and the semiconductive film 1, each sheet was placed on a stainless steel plate with good flatness using a low-viscosity adhesive. A large number of electrode elements for a charging device were produced by bonding them together.
この様にして得られた帯電装置用電極素子を用い、例１
にあけると同様に操作したところ、金又はクロムよりな
る接触電極は、給電電極と接触し、電源の電圧を受ける
ことにより、感光体を均一に帯電させることができた。Using the electrode element for a charging device obtained in this way, Example 1
When the contact electrode made of gold or chromium came into contact with the power supply electrode and received the voltage from the power source, the photoreceptor was able to be uniformly charged.
この様な方法でシー１〜状電極を製造することのメリッ
トは、−度に多数の電極を低コストでできることに必る
。The advantage of manufacturing sea-shaped electrodes by such a method is that a large number of electrodes can be manufactured at a low cost.
例４
例１における半導電性膜として、ジルコニアをイオンブ
レーティングによって膜厚０．１μｍになるように成膜
した以外は同様にして帯電装置用電極素子を作製した。Example 4 An electrode element for a charging device was produced in the same manner as in Example 1, except that zirconia was formed into a film with a thickness of 0.1 μm by ion blating as the semiconductive film.
この帯電装置用電極素子は、ジルコニアが、酸素を電気
伝導のイオン源として、常に大気から供給を受けている
ため、帯電装置において環境変化に関係なく安定して使
用することができた。This electrode element for a charging device could be stably used in a charging device regardless of environmental changes because zirconia was constantly supplied from the atmosphere using oxygen as an ion source for electrical conduction.
以上においては、゛感光体を電荷受容体とする場合につ
いて説明したが、本発明の帯電装置用電極素子は、絶縁
性の電荷受容体に対しても使用することができる。Although the case where the photoreceptor is used as a charge receptor has been described above, the electrode element for a charging device of the present invention can also be used for an insulating charge receptor.
発明の効果
本発明の帯電装置用電極素子は、上記のように絶縁性基
体上に半導電性膜を成膜してなる構成を有するので、半
導電性膜は、絶縁性基板の表面性に忠実な形状を有する
ものとなり、感光体の帯電電位が常に均一になる。また
、半導電性膜を構成する材料の電気抵抗は、温度、湿度
による変化が小さいので、感光体を経時的にも安定して
帯電させることができる。Effects of the Invention The electrode element for a charging device of the present invention has a structure in which a semiconductive film is formed on an insulating substrate as described above. It has a faithful shape, and the charged potential of the photoreceptor is always uniform. Further, since the electrical resistance of the material constituting the semiconductive film changes little with temperature and humidity, the photoreceptor can be stably charged over time.
また、電圧の印加が、帯電装置用電極素子表面で行われ
、かつ半導電性膜の基体が絶縁性材料から形成されてい
るために、半導電性膜が薄層で必るにも拘らず、絶縁破
壊を起こすことがなく安定して使用することができる。Furthermore, since the voltage is applied on the surface of the electrode element for the charging device and the base of the semiconductive film is made of an insulating material, the semiconductive film is necessarily a thin layer. , it can be used stably without causing dielectric breakdown.
第１図は、本発明の一実施例を帯電装置として適用した
場合の説明図、第２図は、本発明の他の実施例を帯電装
置として適用した場合の説明図、第３図は、本発明の帯
電装置用電極素子の製造方法を説明する説明図、第４図
は、本発明の帯電装置用電極素子を用いた電子写真装置
の概略構成図、第５図は従来の帯電装置の斜視図、第６
図は、第５図の断面図、第７図は、従来の半導電性固体
電極を用いた帯電装置の作動説明図である。
１・・・半導電性膜、２・・・絶縁性基板、３・・・感
光体、４・・・電源、５・・・接触電極、６・・・給電
電極、７・・・絶縁層、８・・・金属基板、９・・・レ
ンズ、１０・・・原稿、１１・・・原稿台、１２・・・
照明ランプ、１３・・・現像器、１４・・・転写用帯電
器、１５・・・用紙カセット、１６・・・用紙、１７・
・・剥離用帯電器、１８・・・定着器、１９・・・除電
用帯電器、２０・・・クリーナー、２１・・・感光体帯
電器、２２・・・シールドケース、２３・・・絶縁ブロ
ック、２４・・・放電ワイヤー、２５・・・半導電性固
体電極、２６・・・給電電極。
特許出願人 富士ゼロックス株式会社代理人
弁理士 腹部 剛
（＼
第３図
第４図FIG. 1 is an explanatory diagram when one embodiment of the present invention is applied as a charging device, FIG. 2 is an explanatory diagram when another embodiment of the present invention is applied as a charging device, and FIG. FIG. 4 is a schematic diagram of an electrophotographic apparatus using the electrode element for a charging device of the present invention, and FIG. 5 is a diagram illustrating a method of manufacturing an electrode element for a charging device according to the present invention. Perspective view, No. 6
The figure is a sectional view of FIG. 5, and FIG. 7 is an explanatory diagram of the operation of a charging device using a conventional semiconductive solid electrode. DESCRIPTION OF SYMBOLS 1... Semiconductive film, 2... Insulating substrate, 3... Photoreceptor, 4... Power source, 5... Contact electrode, 6... Power supply electrode, 7... Insulating layer , 8... Metal substrate, 9... Lens, 10... Document, 11... Original table, 12...
Illumination lamp, 13...Developer, 14...Transfer charger, 15...Paper cassette, 16...Paper, 17.
... Charger for peeling, 18... Fixing device, 19... Charger for static elimination, 20... Cleaner, 21... Photoreceptor charger, 22... Shield case, 23... Insulation Block, 24...Discharge wire, 25...Semiconductive solid electrode, 26...Power supply electrode. Patent applicant Fuji Xerox Co., Ltd. Agent
Patent Attorney Tsuyoshi Abori (＼ Figure 3 Figure 4
Claims (7)
置用電極素子。(1) An electrode element for a charging device comprising a semiconductive film formed on an insulating substrate.
ることを特徴とする請求項１記載の帯電装置用電極素子
。(2) The electrode element for a charging device according to claim 1, wherein the insulating substrate is formed by providing an insulating layer on a metal substrate.
求項１記載の帯電装置用電極素子。(3) The electrode element for a charging device according to claim 1, wherein the insulating substrate is in the form of a sheet.
を特徴とする請求項１記載の帯電装置用電極素子。(4) The electrode element for a charging device according to claim 1, wherein an electrode for a power supply electrode is provided at the end of the semiconductive film.
とする請求項１記載の帯電装置用電極素子。(5) The electrode element for a charging device according to claim 1, wherein the semiconductive film is made of an electronically conductive material.
を特徴とする請求項１記載の帯電装置用電極素子。(6) The electrode element for a charging device according to claim 1, wherein the semiconductive film is made of an oxygen ion conductive material.
に接触電極を平行に複数本形成し、該接触電極に沿つて
切断して絶縁層及び半導電性薄膜よりなる複数の板状物
を得、該複数の板状物のそれぞれを、平面性のよい導電
性基板の上に貼り合わせることを特徴とする帯電装置用
電極素子の製造方法。(7) A semiconductive film is formed on a plate-shaped insulating substrate, a plurality of contact electrodes are formed in parallel thereon, and a plurality of insulating layers and semiconductive thin films are cut along the contact electrodes. 1. A method for producing an electrode element for a charging device, comprising: obtaining a plurality of plate-like objects, and laminating each of the plurality of plate-like objects onto a conductive substrate with good flatness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15480088A JP2668951B2 (en) | 1988-06-24 | 1988-06-24 | Electrode element for charging device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15480088A JP2668951B2 (en) | 1988-06-24 | 1988-06-24 | Electrode element for charging device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01321442A true JPH01321442A (en) | 1989-12-27 |
| JP2668951B2 JP2668951B2 (en) | 1997-10-27 |
Family
ID=15592169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15480088A Expired - Fee Related JP2668951B2 (en) | 1988-06-24 | 1988-06-24 | Electrode element for charging device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2668951B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5377070A (en) * | 1992-07-13 | 1994-12-27 | Fuji Xerox Co., Ltd. | Charging apparatus for photoreceptor |
| JP2015118343A (en) * | 2013-12-20 | 2015-06-25 | シャープ株式会社 | Electron emission device, charging device, and image formation device |
-
1988
- 1988-06-24 JP JP15480088A patent/JP2668951B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5377070A (en) * | 1992-07-13 | 1994-12-27 | Fuji Xerox Co., Ltd. | Charging apparatus for photoreceptor |
| JP2015118343A (en) * | 2013-12-20 | 2015-06-25 | シャープ株式会社 | Electron emission device, charging device, and image formation device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2668951B2 (en) | 1997-10-27 |
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