JPH01319938A - Method and device for exfoliating thin segment - Google Patents

Method and device for exfoliating thin segment

Info

Publication number
JPH01319938A
JPH01319938A JP15332088A JP15332088A JPH01319938A JP H01319938 A JPH01319938 A JP H01319938A JP 15332088 A JP15332088 A JP 15332088A JP 15332088 A JP15332088 A JP 15332088A JP H01319938 A JPH01319938 A JP H01319938A
Authority
JP
Japan
Prior art keywords
claws
semiconductor wafer
peeling
catches
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15332088A
Other languages
Japanese (ja)
Other versions
JPH0622223B2 (en
Inventor
Isao Fujimura
藤村 勇夫
Yoshihisa Shimomura
祥久 下村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
Mitsubishi Kasei Corp
Original Assignee
Mitsubishi Kasei Corp
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Kasei Corp, Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Kasei Corp
Priority to JP63153320A priority Critical patent/JPH0622223B2/en
Publication of JPH01319938A publication Critical patent/JPH01319938A/en
Publication of JPH0622223B2 publication Critical patent/JPH0622223B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Hand Tools For Fitting Together And Separating, Or Other Hand Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To exfoliate a semiconductor wafer from an abrasive board and hold it with catches by inserting two or more catches being distance-adjustable from both surfaces of a semiconductor wafer, between the semiconductor wafer and the abrasive board. CONSTITUTION:A catch 10 is moved backward so that the distance between catches 10 and 11 may become larger than a semiconductor wafer 21 by rotating the knob 5. After that, the catches 10 and 11 are applied to an abrasive board 22. Then, the distance between catches 10, 11 is narrowed by rotating the knob 5 reversely, and the periphery of the wafer 21 is grasped. As the distance between the catches 10, 11 is made narrower, exfoliation occurs inside wax 13 at the peripheral part of the wafer 21 grasped with the catches, in a state that the wax 13 softened with the inclined planes of the catches 10, 11 attaches to the wafer 21. This makes the wafer 21 exfoliate from the abrasive board 22 and the wafer 21 is held with the catches 10, 11.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体ウェハー等の薄片をワックス等の接着
剤により研摩板に固定し研摩する工程において、研摩終
了後、研摩板から薄片を剥離する方法は関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is a method of fixing a thin piece of a semiconductor wafer or the like to a polishing plate using an adhesive such as wax and polishing it, and then peeling the thin piece from the polishing plate after polishing is completed. How to do it is related.

〔従来の技術〕[Conventional technology]

第4図〜第6図により従来の薄片剥離方法について説明
する。
A conventional flake peeling method will be explained with reference to FIGS. 4 to 6.

第4図は複数の半導体ウェハーを研摩板に接着した状態
を示す図、第5図及び第6図は従来の剥離用ヘラによる
半導体ウェハーの剥離手順を説明する図で、図中、21
は半導体ウェハー、22は研摩板、23はヘラ、24は
真空ビンセット、25はヘラである。
FIG. 4 is a diagram showing a state in which a plurality of semiconductor wafers are adhered to a polishing plate, and FIGS.
2 is a semiconductor wafer, 22 is a polishing plate, 23 is a spatula, 24 is a vacuum bottle set, and 25 is a spatula.

研摩板22とワックスをクリーンオープン(図示せず)
で加熱し、第4図に示すように軟化したワックスで研摩
板22の表面に複数の半導体ウェハー21を接着して、
研摩機(図示せず)で半導体ウェハー21を研摩する。
Clean open the polishing plate 22 and wax (not shown)
A plurality of semiconductor wafers 21 are bonded to the surface of the polishing plate 22 using softened wax as shown in FIG.
The semiconductor wafer 21 is polished with a polisher (not shown).

研摩終了後、半導体ウェハー21を研摩仮22とともに
洗浄および乾燥して、クリーンオーブン(図示せず)で
加熱しワックスを軟化させる。
After polishing, the semiconductor wafer 21 is washed and dried together with the polishing temporary 22, and heated in a clean oven (not shown) to soften the wax.

第5図に示すように、ヘラ23で半導体ウェハー21を
研摩板22の辺縁に押し出し、真空ピンセット24で研
摩板22から取り上げていた。
As shown in FIG. 5, the semiconductor wafer 21 was pushed out to the edge of the polishing plate 22 using a spatula 23, and was picked up from the polishing plate 22 using vacuum tweezers 24.

また、他の剥離方法として、第6図に示すように研摩板
22を室温又は冷却してワックスの硬化状態で、先端を
薄くしたヘラ25を研摩仮22と半導体ウェハー21の
間に挿入して半導体ウェハー21を剥離していた。
Alternatively, as shown in FIG. 6, as shown in FIG. 6, a spatula 25 with a thin tip is inserted between the polishing temporary 22 and the semiconductor wafer 21 while the polishing plate 22 is at room temperature or in a cooled wax state. The semiconductor wafer 21 was being peeled off.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

このように従来のヘラを使用する半導体ウェハーの剥離
方法では、半導体ウェハーを研摩仮に対して滑らせて移
動するとき半導体ウェハーの裏面に擦り傷が入り不良品
となることがあり、また、ワックスが硬化した状態で強
制的に半導体ウェハーを71離するとシリれる恐れがあ
る。さらに、ヱリ離後の半導体ウェハーを取り扱いも薄
片であるため不安定で、その保持に誤りがあると半導体
ウェハーが割れたり、欠けたりする可能性がある。
In this conventional method of peeling off semiconductor wafers using a spatula, when the semiconductor wafer is moved by sliding it against the polishing pad, the back side of the semiconductor wafer may be scratched, resulting in a defective product, and the wax may harden. If the semiconductor wafer is forcibly separated by 71 degrees in this state, there is a risk of it being crushed. Furthermore, handling of the semiconductor wafer after separation is unstable because it is a thin piece, and if there is an error in holding the semiconductor wafer, there is a possibility that the semiconductor wafer will be broken or chipped.

本発明は上記問題点を解決するためのもので、半導体ウ
ェハーを安全に剥離することができ、剥離後の半導体ウ
ェハーの保持移動が確実に行うことのできる薄片の剥離
方法及び装置を提供することを目的とする。
The present invention is intended to solve the above-mentioned problems, and provides a method and device for peeling off a thin piece, which can safely peel off a semiconductor wafer and can reliably hold and move the semiconductor wafer after peeling. With the goal.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、研12板に接着された薄片を端部を薄くした
複数の爪を薄片の端面から薄片と研摩板の間に挿入させ
ることにより研摩板から剥離させ、かつ、爪で保持する
薄片!F、lI fi方法、同一平面上に対向し、対向
した面の下部が藩くかつ斜面を有する凹部を設けた2個
以上の爪と前記2個以上の爪の間隔を調整する距離調整
手段を備えた薄片?、i+離装置、さらに距離調整手段
を駆動する駆動部と、剥離状態を検出するセンサと、セ
ンサ検知信号が入力され、駆動部を制御する制御装置と
を備え、該制御装置により剥離状態を監視しながら駆動
部を制御して、f、+1離作業を自動化した薄片剥離装
置を特徴とする。
In the present invention, a thin piece adhered to a polishing plate is peeled off from the polishing plate by inserting a plurality of claws with thinned ends from the end face of the thin piece between the thin piece and the polishing plate, and the thin piece is held by the claws! F, lI fi method, two or more claws facing each other on the same plane and provided with a recessed portion having a slope and a slope at the lower part of the opposing surface, and a distance adjustment means for adjusting the interval between the two or more claws. Prepared flakes? , i+ separation device, further comprising a drive unit that drives the distance adjustment means, a sensor that detects the peeling state, and a control device to which a sensor detection signal is input and controls the drive unit, and the peeling state is monitored by the control device. This feature is characterized by a flake peeling device that automates f, +1 separation work by controlling the drive unit.

〔作用〕[Effect]

本発明は、半導体ウェハーの両面から距離の調整できる
2個以上の爪を半導体ウェハーと研摩板の間に挿入させ
ることにより、半導体ウェハーを研摩板から剥離させる
と共に、爪で保持することができる。剥離に際し、加熱
により接着材を軟化しても、しなくてもよく、ウェハー
及びワックスの性質により軟化するか否か適宜選択する
In the present invention, by inserting two or more claws whose distance can be adjusted from both sides of the semiconductor wafer between the semiconductor wafer and the polishing plate, the semiconductor wafer can be peeled off from the polishing plate and held by the claws. At the time of peeling, the adhesive may or may not be softened by heating, and whether or not it should be softened is selected as appropriate depending on the properties of the wafer and wax.

〔実施例〕〔Example〕

以下、図面を参照しつつ本発明の実施例について説明す
る。第1図は本発明による剥離装置の一実施例を示す図
で、同図(A)は平面図、同図(B)は縦断面図、第2
図は本実施例による剥離作業手順を示す図である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing one embodiment of a peeling device according to the present invention, in which (A) is a plan view, (B) is a longitudinal sectional view, and
The figure is a diagram showing a peeling operation procedure according to this embodiment.

なお、図中、第4図と同一番号は同一内容を示し、1は
ヘッド、2はヘッド本体、3は送りねじ、4はスピンド
ル、5はツマミ、6はピン、7はキー溝、8はキー、9
は爪金具、10.11は爪、12はアーム、13はワッ
クスである。
In addition, in the figure, the same numbers as in FIG. 4 indicate the same contents, 1 is the head, 2 is the head body, 3 is the feed screw, 4 is the spindle, 5 is the knob, 6 is the pin, 7 is the keyway, and 8 is the key, 9
10.11 is a claw, 12 is an arm, and 13 is wax.

第1図において、ヘッドlは一端を閉鎖した中空のヘッ
ド本体2とへンド本体2に内蔵された送りねじ3とスピ
ンドル4の主要部から構成され、送りねし3の一方は外
周に雄ねじを設け、スピンドル4の一端の雌ねじと噛み
合わせてあり、送りねじ3の他方はヘッド本体2を貫通
し、ツマミ5をピン6で送りねし3に固定している。ス
ピンドル4はヘッド本体2に設けたキー8と嵌合するキ
ー溝7を有し、つまみ5を回すことにより送りねじ3を
介して、ヘッド本体2内で回転することなく軸線方向に
円滑に移動する。また、スピンドル4の他端には爪IO
を有する爪金具9を固定し、ヘッド本体2にはアーム1
2を介して爪10に対向して爪11を固定している。弗
化エチレン系樹脂その他機械的強度を持つ材料からなる
爪10及び11の凹部は半導体ウェハー21の円周と略
々同じ曲部を有し、かつ、同一平面上にあり、また、爪
lO及び11を研摩板22上に圓いたときヘッド1が研
摩板22に接触しないように爪lO及び11はヘッドl
の中心軸から離し°Cある。さらに、爪10及び11で
半導体ウェハー21を把握して持ち上げたとき半導体ウ
ェハー21が安定するよう爪IOは爪11より成る程度
大きく作っである。
In Fig. 1, the head 1 consists of a hollow head body 2 with one end closed, a feed screw 3 built into the head body 2, and the main parts of a spindle 4. One of the feed screws 3 has a male thread on its outer periphery. The other end of the feed screw 3 passes through the head body 2, and the knob 5 is fixed to the feed screw 3 with a pin 6. The spindle 4 has a key groove 7 that fits into a key 8 provided in the head body 2, and by turning the knob 5, the spindle 4 can be smoothly moved in the axial direction without rotating within the head body 2 via the feed screw 3. do. Also, the other end of the spindle 4 has a claw IO.
The arm 1 is fixed to the head body 2.
A pawl 11 is fixed opposite to the pawl 10 via 2. The concave portions of the claws 10 and 11 made of fluorinated ethylene resin or other mechanically strong material have approximately the same curved portion as the circumference of the semiconductor wafer 21 and are on the same plane. When the head 11 is rounded on the polishing plate 22, the claw lO and the head l
The distance from the central axis is °C. Furthermore, the claws IO are made as large as the claws 11 so that the semiconductor wafer 21 is stabilized when the semiconductor wafer 21 is grasped and lifted by the claws 10 and 11.

次に、第2図を参照して#lI N作業手順を説明する
Next, the #lIN work procedure will be explained with reference to FIG.

半導体ウェハー21を研摩板22に接着したワックス1
3をクリーンオーブンで加熱して軟化した状態(第2図
(イ))、ツマミ5(第1図)を回して半導体ウェハー
21よりも爪10及び11の間隔が大きくなるように爪
10を後退させてから、爪10及び11を研摩板22に
当てかう(第2図(ロ))。ついで、ツマミ5を逆回転
し、爪10及び11の間隔を狭めて半導体ウェハー21
の周辺を把握し、さらに爪10及び11の間隔を狭めて
いくと、半導体ウェハー21のツメで把握された周辺部
において、爪の傾斜面により軟化したワックス13が一
部つエバーに付着した状態でワックス内で41離が生じ
(第2図(ハ))、時間の経過とともに7.11離部5
は拡がり、遂に全面においてワックス内で!、(+離す
る(第2図(ニ))。研摩板22から剥離された半導体
ウェハー21は剥#装置とともに所定の場所に移される
Wax 1 with semiconductor wafer 21 bonded to polishing plate 22
3 in a clean oven to soften it (Fig. 2 (A)), turn the knob 5 (Fig. 1) to move the claw 10 back so that the distance between the claws 10 and 11 is larger than that of the semiconductor wafer 21. After that, the claws 10 and 11 are placed on the polishing plate 22 (FIG. 2 (b)). Next, the knob 5 is rotated in the opposite direction to narrow the gap between the claws 10 and 11, and the semiconductor wafer 21 is
When grasping the surroundings of the semiconductor wafer 21 and further narrowing the distance between the claws 10 and 11, a portion of the wax 13 softened by the sloped surface of the claws is attached to the wafer in the peripheral area grasped by the claws of the semiconductor wafer 21. 41 separation occurs in the wax (Fig. 2 (c)), and as time passes, 7.11 separation 5
It spreads and finally the entire surface is in the wax! , (+ Release (FIG. 2(d)). The semiconductor wafer 21 peeled off from the polishing plate 22 is moved to a predetermined location together with the peeling device.

なお、上記実施例ではワックスを加熱して軟化する例に
ついて説明したが、軟化せずに剥離するごとも可能であ
り、軟化するかしないかは、ウェハーの厚み、材質等、
またワックスの性質により適宜選択すればよい。
Although the above embodiment describes an example in which the wax is heated to soften it, it is also possible to peel it off without softening it, and whether it softens or not depends on the thickness of the wafer, the material, etc.
Further, it may be selected appropriately depending on the properties of the wax.

また、上記実施例では先端側の爪を半導体ウェハーに引
っ掛けて手前側の爪を押してウェハーを把持する例につ
いて説明したが、これとは逆に、手前側の爪を半導体ウ
ェハーに押し当て、先端側の爪を引き寄せるようにして
把持するようにしてもよく、また両方の爪が同時に両者
の間隔を狭めるようにして把持するようにしてもよい。
In addition, in the above embodiment, an example was explained in which the wafer is gripped by hooking the claw on the tip side onto the semiconductor wafer and pushing the claw on the front side. It may be gripped by pulling the side claws closer together, or it may be gripped by both claws simultaneously narrowing the distance between them.

なお、爪の数は2箇以上であればよ(、半導体ウェハー
を把持する凹部の形状は円周の一部でなく、半導体ウェ
ハーの形状に合わせたものでよく、例えば半導体ウェハ
ーが短形であれば、爪lO及び11の四部の形状は直線
状でよいことは言うまでもない。
Note that the number of claws may be two or more. If so, it goes without saying that the shapes of the four parts of the claws 10 and 11 may be linear.

第3図は本発明による剥離を自動化する実施例を示す図
で、図中、31は制御装置、32は駆動部、33はセン
サである。
FIG. 3 is a diagram showing an embodiment of automating peeling according to the present invention. In the figure, 31 is a control device, 32 is a drive unit, and 33 is a sensor.

駆動部32は、例えばモータを備え、ヘッド1を駆動し
て爪9.11により半導体ウエノ1−を把持させる二へ
ラドlにはトルクセンサまたは回転数センサからなるセ
ンサ33が配置されており、スピンドルのトルクは爪が
半導体ウェハーと係合すると増大するので、トルクを検
出して爪と半導体ウェハーの保合状態を検知するか、ま
たは送りネジ3の回転数と爪の変位量とは比例するので
、回転数を検出して爪の変位量を検知する。センサ33
による検出信号は制御装置31に転送される。
The drive unit 32 includes, for example, a motor, and a sensor 33 consisting of a torque sensor or a rotational speed sensor is disposed on the second head 1 which drives the head 1 to grip the semiconductor wafer 1- with the claws 9.11. Since the torque of the spindle increases when the pawl engages with the semiconductor wafer, either the torque is detected to detect the state of engagement between the pawl and the semiconductor wafer, or the rotation speed of the feed screw 3 and the amount of displacement of the pawl are proportional to each other. Therefore, the amount of displacement of the claw is detected by detecting the number of revolutions. sensor 33
The detection signal is transferred to the control device 31.

制御装置31には半導体ウェハーサイズに応じて、例え
ば半導体ウェハーを剥離するときの駆動トルクあるいは
回転数が予めテーブル化して記憶されており、これを読
みだして検出信号と比較することにより剥離が完了した
か否か判断し、剥離完了により次工程への搬送を行うよ
うにする。なお、i・ルク、回転数のどちらか一方でな
く、両方検出するようにしてもよく、また検出方法も剥
離状態を光学的、あるいは電気的に検出するようにして
もよいことは言うまでもない。
The control device 31 stores in advance a table of driving torque or rotational speed when peeling a semiconductor wafer, for example, according to the semiconductor wafer size, and by reading this and comparing it with the detection signal, peeling is completed. It is determined whether the peeling is completed or not, and the conveyance to the next process is carried out when the peeling is completed. It goes without saying that it is possible to detect both i-lux and rotational speed instead of either one, and the peeling state may be detected optically or electrically.

こうして、研磨した半導体ウェハーの剥離作業を自動化
することが可能となる。
In this way, it becomes possible to automate the peeling operation of polished semiconductor wafers.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明によれば、半導体ウェハーを研摩仮
に対して滑らせることにより半導体ウェハーの裏面に擦
り傷が入ったり、接着剤の硬化した状態で強制的に半導
体ウェハーを剥離するときJl+れたりする恐れもなく
、半導体ウェハーを研摩板から剥離することができ、剥
離装置で把握したまま以後の処理工程で取り扱うことが
できる。また、T1離装置に検出器を設けておき、半導
体ウェハーの剥離作業を自動化することも可能となり、
生産性を向上させることが可能となる。
As described above, according to the present invention, scratches may occur on the back surface of the semiconductor wafer when the semiconductor wafer is slid against the polishing material, and Jl+ may occur when the semiconductor wafer is forcibly peeled off while the adhesive is hardened. The semiconductor wafer can be peeled off from the polishing plate without fear of being damaged, and can be handled in subsequent processing steps while being grasped by the peeling device. In addition, by installing a detector in the T1 separation device, it is possible to automate the separation work of semiconductor wafers.
It becomes possible to improve productivity.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による剥離装置の一実施例を示す図で同
図(A)は平面図、同図(B)は縦断面図、第2図は本
実施例による剥離作業手順を示す図、第3図は本発明に
よる剥離を自動化する実施例を示す図、第4図は複数の
半導体ウェハーを研磨板に接着した状態を示す図、第5
図及び第6図は従来の剥離用ヘラによる半導体ウェハー
の剥離手順を示す図である。 l・・・ヘッド、2・・・ヘッド本体、3・・・送りね
じ、4・・・スピンドル、5・・・ツマミ、6・・・ピ
ン、7・・・キーみぞ、8・・・キー、9・・・爪金具
、l0111・・・爪、12・・・アーム、工3・・・
ワックス、21・・・半導体ウェハー、22・・・研摩
板、23.25・・・ヘラ、24・・・真空ピンセット
、31・・・駆動部、32・・・トルクセンサ、33・
・・回転数センサ、34・・・制御装置。 出 願 人  三菱モンサント化成株式会社(外1名) 代理人弁理士 蛭 川 昌 信(外4名)第1図 (A) 第2図 第3区
FIG. 1 is a diagram showing an embodiment of a peeling device according to the present invention, in which (A) is a plan view, (B) is a longitudinal cross-sectional view, and FIG. 2 is a diagram showing a peeling operation procedure according to this embodiment , FIG. 3 is a diagram showing an embodiment of automating peeling according to the present invention, FIG. 4 is a diagram showing a state in which a plurality of semiconductor wafers are bonded to a polishing plate, and FIG.
6 and 6 are diagrams showing a procedure for peeling a semiconductor wafer using a conventional peeling spatula. l...Head, 2...Head body, 3...Feed screw, 4...Spindle, 5...Knob, 6...Pin, 7...Key groove, 8...Key , 9...Claw metal fitting, l0111...Claw, 12...Arm, work 3...
Wax, 21... Semiconductor wafer, 22... Polishing plate, 23. 25... Spatula, 24... Vacuum tweezers, 31... Drive unit, 32... Torque sensor, 33...
... Rotation speed sensor, 34... Control device. Applicant Mitsubishi Monsanto Chemical Co., Ltd. (1 other person) Representative patent attorney Masanobu Hirukawa (4 others) Figure 1 (A) Figure 2 District 3

Claims (4)

【特許請求の範囲】[Claims] (1)研摩板に接着された薄片を端部を薄くした複数の
爪を薄片の端面から薄片と研摩板の間に挿入させること
により研摩板から剥離させ、かつ、爪で保持することを
特徴とする薄片剥離方法。
(1) A thin piece adhered to an abrasive plate is peeled from the abrasive plate by inserting a plurality of claws with thinned ends from the end face of the thin piece between the thin piece and the abrasive plate, and is held by the claws. Delamination method.
(2)同一平面上に対向し、対向した面の下部が薄くか
つ斜面を有する凹部を設けた2個以上の爪と前記2個以
上の爪の間隔を調整する距離調整手段を備えたことを特
徴とする薄片剥離装置。
(2) Two or more claws facing each other on the same plane, each having a recessed portion having a thin and sloped lower part on the opposing surface, and a distance adjustment means for adjusting the interval between the two or more claws. Characteristic flake peeling device.
(3)前記爪は凹部の水平形状が薄片の外形に倣った形
状である請求項2記載の薄片剥離装置。
(3) The flake peeling device according to claim 2, wherein the horizontal shape of the recess of the claw follows the outer shape of the flake.
(4)同一平面上に対向し、対向した面の下部が薄くか
つ斜面を有する凹部を設けた2個以上の爪と、前記2個
以上の爪の間隔を調整する距離調整手段と、距離調整手
段を駆動する駆動部と、剥離状態を検出するセンサと、
センサ検知信号が入力され、駆動部を制御する制御装置
とを備え、該制御装置により剥離状態を監視しながら駆
動部を制御して、剥離作業を自動化したことを特徴とす
る薄片剥離装置。
(4) two or more claws that face each other on the same plane and have recesses with thin and sloped lower portions on the opposing surfaces; a distance adjustment means for adjusting the interval between the two or more claws; and a distance adjustment device. A drive unit that drives the means, a sensor that detects a peeling state,
What is claimed is: 1. A flake peeling apparatus comprising: a control device to which a sensor detection signal is input and which controls a drive section; the control device controls the drive section while monitoring the peeling state to automate a peeling operation.
JP63153320A 1988-06-21 1988-06-21 Flake peeling method and peeling apparatus Expired - Fee Related JPH0622223B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63153320A JPH0622223B2 (en) 1988-06-21 1988-06-21 Flake peeling method and peeling apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63153320A JPH0622223B2 (en) 1988-06-21 1988-06-21 Flake peeling method and peeling apparatus

Publications (2)

Publication Number Publication Date
JPH01319938A true JPH01319938A (en) 1989-12-26
JPH0622223B2 JPH0622223B2 (en) 1994-03-23

Family

ID=15559917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63153320A Expired - Fee Related JPH0622223B2 (en) 1988-06-21 1988-06-21 Flake peeling method and peeling apparatus

Country Status (1)

Country Link
JP (1) JPH0622223B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05162915A (en) * 1991-12-18 1993-06-29 Komatsu Electron Metals Co Ltd Wafer separating device and wafer separating method
JPH0553240U (en) * 1991-12-19 1993-07-13 コマツ電子金属株式会社 Wafer stripping jig
JP2010010207A (en) * 2008-06-24 2010-01-14 Tokyo Ohka Kogyo Co Ltd Separating apparatus and separating method
JP2014175420A (en) * 2013-03-07 2014-09-22 Tokyo Electron Ltd Peeling device, peeling system, and peeling method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987199U (en) * 1982-12-03 1984-06-13 佐藤 弘司 Integrated circuit chip extractor
JPS59132133A (en) * 1983-01-17 1984-07-30 Mitsubishi Electric Corp Manufacture of semiconductor substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987199U (en) * 1982-12-03 1984-06-13 佐藤 弘司 Integrated circuit chip extractor
JPS59132133A (en) * 1983-01-17 1984-07-30 Mitsubishi Electric Corp Manufacture of semiconductor substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05162915A (en) * 1991-12-18 1993-06-29 Komatsu Electron Metals Co Ltd Wafer separating device and wafer separating method
JPH0553240U (en) * 1991-12-19 1993-07-13 コマツ電子金属株式会社 Wafer stripping jig
JP2010010207A (en) * 2008-06-24 2010-01-14 Tokyo Ohka Kogyo Co Ltd Separating apparatus and separating method
US8701734B2 (en) 2008-06-24 2014-04-22 Tokyo Ohka Kogyo Co., Ltd Separating apparatus and separating method
JP2014175420A (en) * 2013-03-07 2014-09-22 Tokyo Electron Ltd Peeling device, peeling system, and peeling method

Also Published As

Publication number Publication date
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