JPH01315935A - Wafer fixing method by electrostatic chuck - Google Patents
Wafer fixing method by electrostatic chuckInfo
- Publication number
- JPH01315935A JPH01315935A JP14592088A JP14592088A JPH01315935A JP H01315935 A JPH01315935 A JP H01315935A JP 14592088 A JP14592088 A JP 14592088A JP 14592088 A JP14592088 A JP 14592088A JP H01315935 A JPH01315935 A JP H01315935A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- insulator
- wafer
- lens
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 10
- 239000012212 insulator Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 230000008602 contraction Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 238000002407 reforming Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は静電チャックを用い、静電力によりウェハを固
定する静電チャックによるウェハ固定方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of fixing a wafer using an electrostatic chuck, in which a wafer is fixed by electrostatic force.
[従来の技術]
従来、静電チャックを用いて、静電力によりウェハを固
定覆る方法では電圧を加える電極部をアルミナ等の熱伝
導率の低い絶縁体で被覆して使用し、つTハを固定して
いた。[Prior art] Conventionally, in the method of fixing and covering a wafer using electrostatic force using an electrostatic chuck, the electrode part to which voltage is applied is coated with an insulator with low thermal conductivity such as alumina, and the It was fixed.
[発明か解決しようとする課題]
電極部の被覆に、アルミナ(室温で21W/m−K)等
の熱伝導率がウェハ(室温で188W/m−K)より低
い絶縁体を使用した場合、基板ウェハ内に蓄積された熱
か、絶縁体を通して放熱されにくくなり、荷電ビーム露
光装置に使用した場合には、露光、現像後の基板ウェハ
上もしくは薄膜上のレジスト形状に、あるいはエツチン
グ装置に使用した場合には、エツチング後の基板もしく
は薄膜のエツチング形状等に基板ウェハ内の残留した熱
が影響し、良好な形状が得られなくなっていた。[Invention or problem to be solved] When an insulator such as alumina (21 W/m-K at room temperature) whose thermal conductivity is lower than that of the wafer (188 W/m-K at room temperature) is used to cover the electrode part, The heat accumulated in the substrate wafer becomes difficult to dissipate through the insulator, and when used in a charged beam exposure system, it is used for resist shapes on the substrate wafer or thin film after exposure and development, or for etching equipment. In this case, the heat remaining in the substrate wafer affects the etched shape of the substrate or thin film after etching, making it impossible to obtain a good shape.
本発明の目的は、このような従来の問題点を解決し、基
板ウェハ内の熱を容易に放散させ得る静電チャックによ
るウェハ固定方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for fixing a wafer using an electrostatic chuck, which can solve these conventional problems and easily dissipate heat within a substrate wafer.
[課題を解決するための手段]
本発明は、静電力によりウェハを固定してなる静電チ1
1ツクによるウェハ固定方法において、静電チャックの
静電力を発生させる電極部をウェハよりも熱伝導率の高
い絶縁体で被覆することを特徴とする静電チャックによ
るウェハ固定方法である。[Means for Solving the Problems] The present invention provides an electrostatic chip 1 in which a wafer is fixed by electrostatic force.
A wafer fixing method using an electrostatic chuck is characterized in that an electrode portion of the electrostatic chuck that generates electrostatic force is coated with an insulator having higher thermal conductivity than the wafer.
本発明において使用し得る絶縁体としでは、熱伝導率か
室温でウェハの熱伝導率168W/m−により高いもの
で必ればよく、例えば炭素等の単結晶体または多結晶体
か挙げられる。The insulator that can be used in the present invention only needs to have a thermal conductivity higher than that of the wafer at room temperature, which is 168 W/m, and includes, for example, a single crystal or polycrystalline material such as carbon.
[作用]
本発明では、電圧を加える電極部の被検に、ウェハより
も高い熱伝導率をもつ絶縁体を使用りることにより、基
板ウェハ内の熱を容易に絶縁体を通して放熱させること
か可能となる。[Function] In the present invention, by using an insulator having a higher thermal conductivity than the wafer for the test of the electrode section to which voltage is applied, the heat within the substrate wafer can be easily dissipated through the insulator. It becomes possible.
従って、露光装置やエツチング装置に使用じた場合にも
、ウェハ内に熱が残留しないの−C良好なレジメ]〜形
状またはエツチング形状を1qることかできる。Therefore, even when used in an exposure device or an etching device, no heat remains in the wafer, and the shape or etching shape can be reduced by 1q.
[実施例]
以下、実施例により、本発明にJ−1るウェハ固定方法
を荷電ビームを用いて所望パターンを露光覆−る荷電ビ
ーム露光装置に使用した場合の一例について、図面を参
照して詳細に説明覆る。[Example] Hereinafter, an example in which the wafer fixing method according to J-1 of the present invention is used in a charged beam exposure apparatus that exposes and covers a desired pattern using a charged beam will be described with reference to the drawings. Cover detailed explanation.
第1図において、イ耐吊に−ム碌“光装置は、荷電ビー
ム銃11から発射された?i?r電ビーム11aを、途
中、照射レンズ、整形レンズ、縮小レンズ、苅物しンス
、ポジションディフレクタ−に通し、電源12から静電
−J□−□yラック3の電(へ部13 bに電圧を加え
ることにより生じる静電力で静電チ(・ツク13に固定
されたウェハ14上のレンズ(〜15に、所望パターン
15aで照射させ、露光するものである。静電ヂ(・ツ
ク13の電極部131)を被覆する絶縁体13aは、ウ
ェハより熱伝導率の高い絶縁体で形成されており、荷電
ビームllaにより基板ウェハ14に蓄積される熱を、
容易に絶縁体13aを通して放熱させることかでき、所
望パターン15aか良好に得られる。In FIG. 1, a suspension-resistant optical device transmits an electric beam 11a emitted from a charged beam gun 11 through an irradiation lens, a shaping lens, a reduction lens, a mirror lens, etc. Through the position deflector, the electrostatic force generated by applying a voltage to the J□-□y rack 3 from the power supply 12 to the electrostatic chip (on the wafer 14 fixed to the rack 13) The lens (~15) is irradiated with light in a desired pattern 15a.The insulator 13a covering the electrostatic charge (electrode portion 131 of the cap 13) is an insulator with higher thermal conductivity than the wafer. The heat accumulated on the substrate wafer 14 by the charged beam lla is
Heat can be easily radiated through the insulator 13a, and the desired pattern 15a can be obtained in good condition.
[発明の効果]
以上説明したように、本発明の方法によれば、電圧を1
j11える電(Φ部の絶縁体による被覆に、ウェハJ−
1りも高い熱伝導率をもつ+、J斜を使用することにJ
、す、基板つ丁ハ内の熱を容易に絶縁体を通して放熱さ
−けることかb]能と41る。このため、該方法を各種
装置に利用した場合に、基板ウェハ内に熱が残留J−る
ために生じる不都合を回避することができ、所期の目的
を支障なく達成することか可能となる。[Effect of the invention] As explained above, according to the method of the present invention, the voltage is reduced to 1
j11 Electrical (Wafer J-
J
It is possible to easily dissipate the heat within the substrate through the insulator. Therefore, when this method is applied to various devices, it is possible to avoid the inconvenience caused by residual heat in the substrate wafer, and it is possible to achieve the intended purpose without any problems.
第1図は本発明の一実施例を示覆構成図である。
11・・・荷電ビーム銃 11a・・・荷電ビーム
12・・・電源 13・・・静電チャック
13a・・・絶縁体 13b・・・電極部14
・・・基板つ上ハ 15・・・レンズ1〜15a
・・・所望パターンFIG. 1 is a schematic diagram showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 11... Charged beam gun 11a... Charged beam 12... Power supply 13... Electrostatic chuck 13a... Insulator 13b... Electrode section 14
... Board top C 15... Lenses 1 to 15a
...desired pattern
Claims (1)
によるウエハ固定方法において、静電チャックの静電力
を発生させる電極部をウエハよりも熱伝導率の高い絶縁
体で被覆することを特徴とする静電チャックによるウエ
ハ固定方法。(1) A wafer fixing method using an electrostatic chuck in which the wafer is fixed by electrostatic force is characterized in that the electrode part of the electrostatic chuck that generates the electrostatic force is covered with an insulator having higher thermal conductivity than the wafer. A wafer fixing method using an electrostatic chuck.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14592088A JPH01315935A (en) | 1988-06-15 | 1988-06-15 | Wafer fixing method by electrostatic chuck |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14592088A JPH01315935A (en) | 1988-06-15 | 1988-06-15 | Wafer fixing method by electrostatic chuck |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01315935A true JPH01315935A (en) | 1989-12-20 |
Family
ID=15396138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14592088A Pending JPH01315935A (en) | 1988-06-15 | 1988-06-15 | Wafer fixing method by electrostatic chuck |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01315935A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05174766A (en) * | 1991-02-26 | 1993-07-13 | Nikon Corp | Scan type electron microscope |
US5280156A (en) * | 1990-12-25 | 1994-01-18 | Ngk Insulators, Ltd. | Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means |
-
1988
- 1988-06-15 JP JP14592088A patent/JPH01315935A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5280156A (en) * | 1990-12-25 | 1994-01-18 | Ngk Insulators, Ltd. | Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means |
JPH05174766A (en) * | 1991-02-26 | 1993-07-13 | Nikon Corp | Scan type electron microscope |
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