JPH01315177A - Superconductive optoelectronic element and device thereof - Google Patents

Abstract

PURPOSE:To effectively use an optical property of characteristic of the material in relation to a superconductive area by forming a source area and a drain area of superconductive material and constituting a gate area by superconductive and photoconductive material which exhibits photoconductivity at the critical temperature of superconductive material. CONSTITUTION:A photoconductive gate area 2 composed of superconductive and photoconductive material of Ca-Sr-Bi-Cu-O oxide expressed by Ca2-X-SrX- BiY-y-Cuy-O and a source area 3 and a drain area 4 which face each other by sandwiching the gate area 2 and are composed of superconductivity material. Further a bias source arranged between the source area 3 and the drain area 4 is provided. Output current corresponding to the quantity at light which is projected on the gate area between the source and the drain can be taken out. Thereby a super conductive optoelectronic element such as optical switching element, an optical detector and an optical amplifying element which can rapidly responce without power loss can be realized.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a conventional method that combines a superconducting material and a superconducting optoelectronic material that exhibits a photoconductive phenomenon in parallel at a temperature below its critical temperature. The present invention relates to a new "superconducting optoelectronic device" and "superconducting optoelectronic device" that go beyond the concept of superconducting electronic devices.

(Prior art) With the development of superconducting materials, various superconducting materials have been discovered, such as Y-Ba-Cu-0 based oxides and Ca-3r-Bi-Cu-0 based oxide superconductors. material has been found. However, the current development of superconducting materials is aimed at increasing the critical temperature, and the current situation is that their optical properties have not been elucidated or particularly utilized.

The reason for this is that superconductivity is thought to be contradictory to physical properties such as light absorption and photoconductivity, and by irradiating light with a wave number higher than the gap energy of the BCS theory, the superconductor can be stabilized. This is because sexuality was thought to be destroyed. Furthermore, the superconducting materials developed so far are mainly metals and their alloys, and no superconducting material with optically useful properties has yet been discovered.

However, if recent high-temperature superconducting oxide materials are combined with superconducting photoconductive materials that have unique optical properties at temperatures below their critical temperature, it will be possible to create an image sensor with superconducting wiring, etc. Of course, switching elements and optical arithmetic elements without power loss can be realized, optical logical operations and spatially parallel optical operations can be realized, and high-speed arithmetic devices that operate with low power can be realized.

(Problems to be Solved by the Invention) As mentioned above, current research on superconductivity is mainly aimed at increasing the critical temperature. However, as a result of various experiments and analyzes regarding superconductivity, the present inventor has found that, for example, Y-Ba
-Cu-0 based oxide, Ca-5r-Bi-Cu-Q based oxide and Ba-Pb-B1-0 based oxide in parallel below the critical temperature of the superconducting material related to these oxides. It has been found that it has the unexpected and significant effect of producing photoconductivity. In other words, these oxides exhibit electrical insulating properties at room temperature, but at temperatures below the transition temperature of the superconducting materials related to these oxides, carriers are generated depending on the amount of incident light, and their conductivity changes. It was found that it has photoconductivity. Therefore, for example, a Ca-5r-Bi-Cu-0 based oxide in a superconducting photoconductive state and a Ca-5r-Bi-Cu-0-based oxide in a related superconducting state.
By combining it with Cu-0-based oxides, useful superconducting optoelectronic devices without power loss can be constructed. Here, the superconducting optoelectronic device refers to a photoelectric device that combines a superconducting material and a superconducting photoconductive material of the same series that has photoconductivity at a temperature below its critical temperature.

Therefore, the purpose of the present invention is not to solve the prior art and its problems, but to utilize the unique optical characteristics of the superconducting photoconductive material newly discovered by the present inventors, that is, the material that leads to the superconducting region. The present invention provides a superconducting optoelectronic device that effectively utilizes the properties of the present invention.

(Means for Solving the Problem) A superconducting optoelectronic device according to the present invention is formed on a substrate, and includes a photoconductive gate region jJ made of a superconducting photoconductive material, and a photoconductive gate region sandwiched therebetween. a source region and a drain region made of a superconducting material and facing each other, and a bias source disposed between the source region and the drain region; - It is characterized by being configured so that the current between the drains is controlled.

(Function) As a result of experimental analysis of the superconductivity and optical properties of various superconducting materials, the present inventor found that various superconducting materials exhibit superconductivity at temperatures below their transition temperature. It was also discovered that the material exhibits photoconductivity. That is, for example, (,1-3r-Bi-Cu-0
It has been found that the superconductivity of oxides changes from superconductivity to photoconductivity below the transition temperature depending on the Sr content.

Figure 1 shows experimental results showing superconductivity and photoconductivity in Ca-5r-Bi-Cu-0 based oxides.
Figure 1 (a) shows the temperature dependence of the photoresponse of Bi201, which the inventor considers as a reference material, and Figure 1 (b) shows the temperature dependence of the photoresponse of Bi201, which the inventor considers as a reference material.
Figure 1(c) shows the temperature dependence of the photoresponse of X-Bi, -Cu, -Oz (x = O).
-Bi, -Cuz -0, x = 1) shows the temperature dependence of resistivity.

The inventor has the general formula Cat-X-5rx-Biy-y
-Cu, Ca-5r-Bi-Cu- represented by -0
As a result of various experiments and analyzes on 0-based oxides, we found that 2≦X≦3.3≦Y≦4.0, y≦2.4≦2≦
It was found that under the conditions of 9, the content X of S exhibits superconductivity in the range of 1≦X≦2, and exhibits photoconductivity in the range of 0≦×≦1. That is, Ca-5゜-Bi-
In the Cu-0-based oxide, the Sr content X is 1≦X
In the range of ≦2, it exhibits superconductivity, and when X becomes smaller than that, the superconductivity disappears, and instead it exhibits photoconductivity at a temperature below its transition temperature. In this way, materials that have the unique property of transitioning from superconductivity to photoconductivity at temperatures below the transition temperature due to changes in the content of some constituent atoms are called ``superconducting photoconductive materials.'' shall be taken as a thing.

Figures 2 (a) and (b) show the reference materials BizOi and Caz-, -5r, -Bi, -Cut-Oz (x=O
) shows the wavelength dependence at 4.2K. Reference materials Bi201 and Caz-0-Srx-Bil-Cut-
Oz (x=0) shows a wavelength dependence that almost corresponds to
The photoresponsiveness gradually increases as the wavelength shifts from 650 nm to the shorter wavelength side, and the photoresponsiveness is almost constant at wavelengths longer than 650 nm. By combining a material that has photoconductivity at a temperature below the transition temperature with a material that has superconductivity at a temperature below the transition temperature, it is possible to combine superconductivity and photoconductivity at temperatures below the critical temperature. It is possible to realize a useful superconducting optoelectronic device having the following properties. Therefore, if the gate region is made of a superconducting photoconductive material and the source and drain regions are made of superconducting materials, it is possible to extract an output current between the source and drain that corresponds to the amount of light incident on the gate region. , an optical switching element capable of high-speed response without power loss,
Superconducting optoelectronic devices such as photodetectors and optical amplification devices can be realized.

Next, Y-Ba-Cu-0 based oxide will be explained.

Figures 3(a) and 3(b) show the experimental results of superconductivity and photoconductivity of Y-Ba-Cu-0 based oxides.
) shows the temperature dependence of the photoresponse of Y3-X-Bax-Cu3-Oz (x=0), and Fig. 3(b) shows the temperature dependence of the photoresponse of Y3-X-Bax-Cu3-Oz (x=0).
Figure 3(c) shows the temperature dependence of the photoresponse of Y3-x-Ba, -Cut-Og ((X = 1)).
011 (x=1. x=2) shows the temperature dependence of dark resistivity. In the V-Ba-Cu-0 type oxide represented by the general formula Y3-X-Ba+t-Cu, -Oz, it shifts from superconductivity to photoconductivity depending on the Ba content lx and the oxygen content i1z. ■Exhibits superconductivity in the range of ■≦×≦2.6.5≦2≦7, and 0≦X≦1.7.0≦2≦7.5
, or in the range of x=2.6.0≦2≦6.5, it has been found that it exhibits photoconductivity at a temperature below its transition temperature. As shown in FIGS. 3(a) and (b), Y31-Ba
It can be clearly understood that in the X-Cu, -Os system, when x=O and x=1, photoconductivity is exhibited at a temperature below its critical temperature.

FIG. 4 shows the excitation light wavelength dependence of the photoconductive response of the same series materials at T.77K. As is clear from Figure 4,
It can be seen that it has a unique photoconductivity in the excitation light wavelength range of 420 to 640 nm at a temperature below the critical temperature. FIG. 5 shows the excitation light intensity dependence at λ-470 nm for the same series materials. As shown in Figure 5, this Y3-
In the X-Cut-L material, the photocurrent increases in response to the intensity of incident light. Based on these results, Y, -8-Ba
In the case of 0≦X≦1 in the Au-Cu, -0,-based superconducting material, a superconducting photoconductive material is constituted, and in the range of 1≦X≦2, a superconducting material is constituted.

Next, the Ba-Pb-B1-0 type oxide will be explained.

Figures 6(a) and (b) show the temperature dependence of the photoresponses of reference materials Bi2O2 and Ba1-pb,-,4iX-og, and Figures 7(a) and (b) show their wavelengths. Show dependencies.

In Ba-Pb-B1-0 type oxide, 0.20≦
It was found that it exhibited superconductivity in the range of X≦0.35.2.81≦2≦3 and exhibited photoconductivity in the range of X≦0.35.2.7≦2≦2.81.

Next, La2-Cu1-0. The system oxide will be explained.

Figure 8 shows experimental results showing the temperature dependence of photoconductivity of Laz-C+g-0, and Figure 8(a) shows 2=3
．． 88, and FIG. 8(b) shows the photoresponse characteristics at 2=
Figure 8(c) shows the photoresponse characteristics at 3.92.
The temperature dependence characteristics of dark resistance at z = 3.88 and z = 3.92 are shown. It is known that La2-Cu, -01-based oxides exhibit superconductivity at temperatures below about 30°C when 2=3.92. On the other hand, as shown in FIG. 8, it has been found that reducing the oxygen content causes a transition from superconductivity to photoconductivity. Also, as shown in Figure 9, z = 3.88 (Figure 9 (b)) and 2 = 3.9
2 (Figure 9(C)), 450 nun to 650
It was found that the material exhibits photoconductivity in a certain wavelength range.

FIG. 10 is a graph showing the relationship between the amount of incident light and the photoconductive response at z -3,88. As is clear from FIG. 10, it is clearly observed that the photocurrent increases depending on the amount of incident light.

(Example) FIG. 11 is a diagrammatic cross-sectional view showing the structure of an example of a superconducting optoelectronic device according to the present invention.

In this example, an example of use as a superconducting phototransistor (VG≧0) will be described. A substrate 1 made of 5rTiO+ is used, on which a photoconductive gate region 2 is formed. The gate region 2 is made of photoconductive Cat-Bi, -Cu with a width of 0.2 μm to 1.0 m and a thickness of 1 to 10 μm.

- Consists of 07 layers. This Caz-Bit-Cuz-O
xN has a unique photoconductivity in the excitation light wavelength range of 540 to 740 nm at a temperature below the critical temperature of the superconducting material made of Qa+-5r1-Cu+-oZ. . A source region 3 and a drain region 4 are formed on both sides of the gate region 2.

The source region 3 and drain region 4 are heated to a critical temperature of 1
Cat-Sr exhibiting superconductivity at 05-115 (K)
+-Bit-CuO08 material layer. moreover,
On the gate 9M region 2, the source region 3, and the drain region 4, a 1 μm thick optically transparent and electrically insulating Si layer is formed.
An O□ layer 5 is formed, and a Nesa glass layer 6 is formed thereon. A bias source v6 is connected between the electrode on the Nesa glass and the source region 3, and the source region 3 and the drain region 4
A bias 'tJ V s o and an output resistor R are connected between. In addition, Caz-ni-5rX-Bit-Cuz
- By continuously changing the composition of oZ to X=O-
It is also possible to configure 5r-Cu-0-based regions 3 and 4.

The superconducting optoelectronic device having the above structure is
Critical temperature of a-5r-Bi-Cu-0 material layer 105-1
When it is cooled to a temperature of 15 or less and irradiated with light in the excitation wavelength range, carriers are generated in the gate 9M region 2 according to the amount of incident light. The generated carriers are accelerated by the source-drain bias VSO and become a current, which generates an output voltage at the output resistor R. Note that the photogenerated carriers are determined by the amount of irradiation light and the bias source ■. Since the generation density is determined according to , vG can be appropriately set according to the purpose. With this configuration, it is possible to obtain output characteristics that correspond to the amount of incident light, and therefore a superconducting optical switching element can be realized. In particular, since the source region and the drain region are made of a superconducting material, it is possible to realize an essential superconducting optoelectronic device that does not generate heat during operation.

FIG. 12 is a diagram showing an example in which the superconducting optoelectronic elements shown in FIG. 11 are integrated into an array.

If the superconducting optoelectronic elements according to the present invention are integrated at high density in a one-dimensional or two-dimensional array, an image sensor can be created that minimizes heat generation during operation while also having appropriate superconducting wiring between the elements. In addition, it is possible to realize the main parts such as signal detection of an optical computer that performs spatially parallel calculations. It is also possible to create multiple channels by selecting the wavelength of the light source used.

FIG. 13 is a diagram showing an example of optical calculation in a projection correlation optical system in a spatially parallel optical computer using the superconducting optoelectronic device according to the present invention. A plurality of optical signals are projected in parallel from an array light source IO toward a mask pattern 11.

The mask pattern 11 has encoded image information formed in a mask shape according to the content of arithmetic processing, and the mask pattern 11
The plurality of light beams that have passed through the screen 12 are incident on corresponding elements of the composite mask optical element array 13 in parallel. Since a coded signal modulated by a mask screen is formed in each optical element, a calculation result is determined from the photoelectric output signal from each optical element. By constructing each element of the optical element array 13 with a superconducting optoelectronic element according to the present invention, parallel optical operations can be performed while minimizing heat generation during operation.

In the above-described embodiments, a three-terminal element was used as an example, but it can also be used as a two-terminal element. In other words, since the carriers generated in VC=O have a superconducting proximity effect due to superconducting photoconduction, this superconducting optoelectronic device can also act as a superconducting Josephson junction device based on light irradiation. Expected to get.

This two-terminal device can be positioned as a “superconducting photoconductivity controlled Josephson junction device”. In this case, it is necessary to appropriately select the gate width and the amount of incident light.

Furthermore, in the above-mentioned embodiment, Ca-3r-Bi-Cu
-0 series materials were used, but Ba-Pb-B1-0, La-
Other superconducting photoconductive material systems can also be used, such as Cu-0, Y-Ba-CuO based materials. For example, the gate region is made of BaIPbo, 5Bio, s (h material), and the source and drain regions are made of superconducting Bal material.
A superconducting photoconductive optoelectronic device having similar effects can be realized by using Pbo, o, s Bio, and zsO1 materials.

The superconducting photoconduction phenomenon described above is thought to be based on the following mechanism. The photoconductive spectral response Q (λ, T) shown in FIGS. 2(a) and (b) is Cat-x-Sr
This suggests that a region similar to Bi, 01 in an atomic sense exists inside the x-Biz-, -Cuy-Ox sample. Light absorption and photoconductivity by Bi2O3 have not yet been elucidated in detail either experimentally or by exciton theory. However, it is probably a typical example of a charge-transfer type Frenkel exciton within a cation shell. The position of the fine structure at Q(λ, T) here closely matches the structure of the fundamental absorption edge of Bi2O3 itself. We can even see some distinct fine structures, probably due to excitons. For example, similar to the old 20 units, Caz-Bi 1-
λ# 623n of photoconductive response spectrum of Cuz-03
A structure considered to correspond to the n=2 state of a series exciton with Bi2O2 in the m vicinity is observed. Therefore, C
Inside the a-5r-Bi-Cu-0 system material, Bi2O3 exists in at least a finite proportion that cannot be ignored.
There are phases similar to . Although there are slight differences in their crystal structures, conduction electrons and holes excited by light are certainly in a state of movement (
(See FIG. 14(a)).

The conduction electrons and holes in standard type Bi 203 crystals are thought to form "small polarons".

However, in an insulating sample, “°photoconductivity Q(λ,
The appearance of T) is clearly related to the appearance of superconductivity, and it appears as if superconductivity is hidden behind the phenomenon of photoconductivity.Therefore, the polaron effect For that matter, whether it is a "large polaron" based on interaction with the LO phonon, a "small boularonpa" due to the Jahn-Teller effect, or something in the region of intermediate coupling between both, Anyway, Figures 1 (a) to (c) and Figure 2 (a)
As shown in (b), the polaron effect is at least potentially important as well as the "polaron effect due to electronic polarization". These polaron effects are thought to have a complex effect as elementary excitations in a coherently hybridized form. Here we need to pay special attention to polarons due to electronic polarization, which are also called "exciton polarons." Looking at the experimental results here, we find that polarons and exciton It was recognized that there is a close relationship between

As shown in Figure 14(a), these polarons and excitons all change from the (2p) and (6s) hybrid valence states of oxygen to the (2p) 6(6s) ' configuration. ° Conduction electrons of (6p)' are created mainly by interband transition to the (6p) conduction band of Bi while interacting with LO phonons, leaving behind "holes" (white circles). . However, Ca-3r-Bi-Cu-0 system polarons can be created by optical excitation or by replacing Ca with Sr (see Figure 14(b)).
In this case, it has transitioned to a superconductor when ×=1). Bi(6
Since holes in the s) and 0(2P) hybrid band can be created from the many-body ground state by either interband or intraband transitions, the correlation effect between electrons is of course extremely important. We investigated not only the dynamic valence electron fluctuations between Bi'+ and Bt 4 +, (uZ+ and Cu), but also the
'.

More attention must also be paid to the dynamic valence electron fluctuation between Bi''+ and Bi'+, and especially between Bi''+ and Bi'+. therefore,
For superconducting mechanisms with high critical temperatures, there are good reasons to consider the potential role of collections of polarons, both large and small, especially those closely related to excitons. Polaron and exciton ensembles can be bipolarons, polaron exciton ensembles, and/or “exciton-mediated bipolarons” based on dynamic electron correlations as well as, most likely, dynamic electron-phonon interactions. It seems that it is.

As shown in FIG. 2(b), Ca-5r-Bi-Cu-
The photoconductive response Q(λ, T) in the zero system is very similar to the spectrum of the old 20° photoconductive response shown in FIG. 2(a).

Therefore, the study of elementary excitations here is thought to reveal the nature of the superconducting ground state, despite the huge difference in carrier density. Furthermore, even in the elementary excited state (insulator) of FIG. 14(a), it can be predicted that a decrease similar to the Josephson effect in the ground state (superconductor) of FIG. 14(b) will appear. To the best of our knowledge, the mechanism of polarons and excitons that appears in the superconductivity of the Ca-5r-Bi-Cu-0 system, which is known to have a high critical temperature and certainly exhibit diamagnetic properties. This is the first clear experimental evidence that

(Effects of the Invention) As explained above, according to the present invention, the source region and the drain region are made of a superconducting material, and the Ga HI region is made of a superconducting material that exhibits photoconductivity at the critical temperature of the superconducting material. Because it is composed of a photoconductive material, it is essentially a superconducting optoelectronic device that minimizes heat generation effects such as Joule heat during operation, such as a superconducting photoconductive Josephson junction. It is possible to realize devices such as ``device'', ``superconducting phototransistor'', and the like. Furthermore, when the elements according to the present invention are integrated at high density in a two-dimensional array, the electrode portions, lead portions, etc. have complete diamagnetic properties.
Noise generation and transmission can be effectively suppressed without being affected by electromagnetic interaction between them or external magnetic fields. Therefore, it is possible to realize an optical element array that can operate under the best thermal and electromagnetic conditions, and to realize essentially superior "superconducting optoelectronic devices" such as spatially parallel optical processing devices with high processing speeds. is possible.

These effects have the potential to open up a cutting-edge scientific and technological field called "superconducting optoelectronics."

[Brief explanation of the drawing]

Figures 1 (a) to (c) are graphs showing the photoconductivity and photoconductivity of Ca-5r-Bi-Cu-0 based oxides, Figure 2 (a) and (b) are Ca-5r- Bi-Cu-0
Graph showing the wavelength dependence of the photoconductive response of oxides, 3rd
Figures (a) to (c) are graphs showing the photoconductivity and superconductivity of Y-Ba-Cu-0 based oxides, and Figure 4 (a) to (c) are graphs showing Y-Ba-Cu-0 based oxides. A graph showing the wavelength dependence of the photoconductive response of oxides. Figure 5 is a graph showing the relationship between the incident light intensity and the photoconductive response of Y-Ba-Cu-0 based oxides. Figure 6 (a) and (b) is the reference material Bi, 0. and Ba
- Graphs showing the temperature dependence of the photoconductive response of Pb-B1-0 series oxides. Figures 7 (a) and (b) show the wavelength dependence of the photoconductive response of Ba-Pb-B1-0 series oxides. Graphs showing the photoconductivity and superconductivity of La-Cu-0 based oxides, Figures 9(a)-(c) are graphs showing the photoconductivity and superconductivity of La-Cu- A graph showing the wavelength dependence of the photoconductive response of the 0-based oxide. FIG. 10 is a graph showing the relationship between the incident light intensity and the photoconductive response of the La-Cu-0 based oxide. FIG. A schematic cross-sectional view showing the configuration of an example of a superconducting optoelectronic device, FIG. 12 is a diagram showing the configuration of an example of a superconducting optoelectronic device according to the present invention, and FIG. 13 is a diagrammatic cross-sectional view showing the configuration of an example of a superconducting optoelectronic device according to the present invention. FIG. 2 is a diagram showing the configuration of a spatially parallel arithmetic device using an array. Figure 14 (a) and (b) are caZ-X-Sr, -B1
3-y-Cuy-0, system x=0 (insulator) and x=
1 (superconductor) energy (E) and density of states N (E
) is a schematic diagram showing the relationship between the two. 1...Substrate 2...Gate region 3...
・Source 8U region 4...Drain region ■9...Gate bias source VSa...Source-drain bias source Patent applicant University of Tokyo President Figure 1 0 20 40 6θ 110 /θθ f
20 140 pieces (K) Figure 2 Line length (nm') Figure 3 Line length (K) Figure 4 Figure 5 Skin length (nm) Figure 6 0 20 40 60 BOtoo tzO bottom (K) Figure 7 First printing ';:'-CeV) Skin length (nm) T (K) Fig. 9 Wavelength (nm) Fig. 10 024 6f3 Fusato Kiko 5 anomaly (Aesui Nao) Fig. 11 Fig. 12 (a ) Autumn wilt secret danger N (E) - Figure (b) Shape of planting hole N (E) - Hand VT amendment (method) % formula % 1. Indication of the incident 1988 Patent Application No. 201655 2. Invention Name of superconducting optoelectronic device and superconducting optoelectronic device 3, Relationship with the case of the person making the amendment Patent applicant: President of the University of Tokyo 4, attorney: 5, date of amendment order: 1, specification, page 22, item 16 Correct line 12 of page 23 as follows: "Figure 1 is a graph showing the photoconductivity and photoconductivity of Ca-3r-Bi-Cu-0 based oxide, and Figure 2 is a graph showing the photoconductive response of Ca-3r-Bi-Cu-0 based oxide. Graph showing wavelength dependence. Figure 3 is a graph showing photoconductivity and superconductivity of Y-Ba-Cu-0 based oxide. Figure 4 is photoconductivity of Y-Ba-Cu-0 based oxide. A graph showing the wavelength dependence of the response. Figure 5 is a graph showing the relationship between the incident light intensity and the photoconductive response of Y-Ba-Cu-0 based oxide. Pb-B1-0
Graphs showing the temperature dependence of the photoconductive response of Ba-Pb-B1-0 system oxides, Figure 8 is a graph showing the wavelength dependence of the photoconductive response of Ba-Pb-B1-0 system oxides, and Figure 8 is a graph showing the wavelength dependence of the photoconductive response of Ba-Pb-B1-0 system oxides. Graph showing photoconductivity and superconductivity of oxides based on

Claims (1)

[Claims] 1. A photoconductive gate region formed on a substrate and made of a superconducting photoconductive material, and a source made of a superconducting material facing each other with the photoconductive gate region sandwiched therebetween. and a bias source disposed between the source and drain regions, the source-drain current being controlled in accordance with the amount of light incident on the photoconductive gate region. A superconducting optoelectronic device characterized by: 2. The photoconductive gate region is defined by the general formula Y_3_-_x-Ba_x-Cu_y-O_z, where 0≦x≦1, y=3, 7.0≦z≦7.5, or x=2, The source and drain regions are formed of a superconducting photoconductive material having a composition of y=3 and 6.0≦z≦6.5, and the source and drain regions have the general formula Y_3_−_x−Ba_x−Cu_y−O_z, where 1≦x 2. The superconducting optoelectronic device according to claim 1, wherein the superconducting optoelectronic device is made of a superconducting material having a composition of ≦2, y=3, and 6.5≦z≦7. 3. The photoconductive gate region has the general formula La_2_-Cu_1_-O_z, where 3.
86≦z≦3.92, the source and drain regions have the general formula La_2_-Cu_1_-O_z, where 3.
The superconducting optorelectronic device according to claim 1, characterized in that it is made of a superconducting material having a composition of 92<z=4.02. 4. The photoconductive gate region has the general formula Ca_X_x-Sr_xBi_Y_-_y-Cu
_y−O_z, where 2≦X≦3, 0≦x<1, 3≦
The source and drain regions are made of a superconducting photoconductive material having a composition of Y≦4, 0<y≦2, 4≦z≦9, and the source and drain regions have the general formula Ca_X_x-Sr_x-Bi_Y_-_y-C
u_y−O_z, where 2≦X≦3, 1≦x≦2, 3
2. The superconducting optoelectronic device according to claim 1, wherein the superconducting optoelectronic device is made of a superconducting material having a composition of ≦Y≦4, 0<y≦2, and 4≦z≦9. 5. The photoconductive gate region is defined by the general formula Ba_1-Pb_1_-_x-Bi_x-O_z
Here, the source and drain regions are made of a superconducting photoconductive material having a composition of x≦0.35 and 2.7≦z≦3, and the source and drain regions are expressed by the general formula Ba_1-Pb_1_-_x-Bi_x-O_
z, where 0.20≦x≦0.35, 2.81≦z≦
3. The superconducting optoelectronic device according to claim 1, wherein the superconducting optoelectronic device is made of a superconducting material having a composition according to claim 3. 6. A superconducting optoelectronic device, characterized in that the superconducting optoelectronic elements according to any one of claims 1 to 5 are integrated into a two-dimensional array.