JPH01306583A - Reactive ion etching device - Google Patents
Reactive ion etching deviceInfo
- Publication number
- JPH01306583A JPH01306583A JP13706988A JP13706988A JPH01306583A JP H01306583 A JPH01306583 A JP H01306583A JP 13706988 A JP13706988 A JP 13706988A JP 13706988 A JP13706988 A JP 13706988A JP H01306583 A JPH01306583 A JP H01306583A
- Authority
- JP
- Japan
- Prior art keywords
- material
- rotor
- reactive ion
- paralleling
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve the uniformity of an etching rate and its yield by relatively rotating a material to be etched while paralleling the magnetic field direction and the material surface.
CONSTITUTION: A material to be etched is placed on a rotor 42 through a material receiver 41 and an O ring 4, and chucked by chucks 3. An inert gas such as He is introduced from an inert gas inlet 5, and allowed to flow out from a gas orifice 6 inside the O ring 4 to fill the space between the material bottom and the upper surface of the rotor 42. Consequently, the heat produced on the material is radiated toward the cooled cathode. The rotor 42 is rotated by a motor set below the lower cathode 1, and the material is relatively rotated while paralleling the magnetic field direction and the material surface. The reactive ion etching device is appropriately used in the dry developing of a resist for dry development process.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13706988A JPH01306583A (en) | 1988-06-03 | 1988-06-03 | Reactive ion etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13706988A JPH01306583A (en) | 1988-06-03 | 1988-06-03 | Reactive ion etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01306583A true JPH01306583A (en) | 1989-12-11 |
Family
ID=15190175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13706988A Pending JPH01306583A (en) | 1988-06-03 | 1988-06-03 | Reactive ion etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01306583A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6531069B1 (en) | 2000-06-22 | 2003-03-11 | International Business Machines Corporation | Reactive Ion Etching chamber design for flip chip interconnections |
| JP4869533B2 (en) * | 2000-03-10 | 2012-02-08 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Processing chambers and apparatus for supporting a substrate |
-
1988
- 1988-06-03 JP JP13706988A patent/JPH01306583A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4869533B2 (en) * | 2000-03-10 | 2012-02-08 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Processing chambers and apparatus for supporting a substrate |
| US6531069B1 (en) | 2000-06-22 | 2003-03-11 | International Business Machines Corporation | Reactive Ion Etching chamber design for flip chip interconnections |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5225024A (en) | Magnetically enhanced plasma reactor system for semiconductor processing | |
| JPH02309638A (en) | Wafer etching device | |
| JPH04341568A (en) | Method for forming thin film and device therefor | |
| JPS6244571A (en) | Ion implantation device | |
| JPS6050923A (en) | Method of plasma surface treatment and device therefor | |
| JPS6272121A (en) | Semiconductor treating device | |
| JPS5779621A (en) | Plasma processing device | |
| JPH02238616A (en) | Vacuum heat-treatment apparatus for substrate | |
| JPH02159027A (en) | Plasma treatment device | |
| JPS5767173A (en) | Plasma etching device | |
| JPS5990928A (en) | Rotary type surface treatment apparatus | |
| JPH02260424A (en) | Dry etching | |
| JPH01147065A (en) | Formation of film on powder | |
| JPS59232420A (en) | Dry etching apparatus | |
| JPS56123377A (en) | Plasma cleaning and etching method | |
| JP2002158211A (en) | Ion beam etcher | |
| JPS62232911A (en) | Magnetic film forming device | |
| JPS63172429A (en) | Microwave plasma treating apparatus | |
| JPH04236425A (en) | Plasma processing equipment | |
| JPH02198138A (en) | Electrode plate of parallel plate type dry etching apparatus | |
| JPS63141316A (en) | Low temperature dry-etching method | |
| JPS62265198A (en) | Method for synthesizing diamond | |
| JPH04186619A (en) | Manufacture of semiconductor | |
| JPS6327022A (en) | Microwave plasma treater | |
| JPS63116428A (en) | Dry etching method |