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JPH01306583A - Reactive ion etching device - Google Patents

Reactive ion etching device

Info

Publication number
JPH01306583A
JPH01306583A JP13706988A JP13706988A JPH01306583A JP H01306583 A JPH01306583 A JP H01306583A JP 13706988 A JP13706988 A JP 13706988A JP 13706988 A JP13706988 A JP 13706988A JP H01306583 A JPH01306583 A JP H01306583A
Authority
JP
Japan
Prior art keywords
material
rotor
reactive ion
paralleling
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13706988A
Inventor
Yuuji Furuwatari
Yoshiyuki Harita
Mitsunobu Koshiba
Keiichi Yamada
Original Assignee
Japan Synthetic Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Synthetic Rubber Co Ltd filed Critical Japan Synthetic Rubber Co Ltd
Priority to JP13706988A priority Critical patent/JPH01306583A/en
Publication of JPH01306583A publication Critical patent/JPH01306583A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To improve the uniformity of an etching rate and its yield by relatively rotating a material to be etched while paralleling the magnetic field direction and the material surface.
CONSTITUTION: A material to be etched is placed on a rotor 42 through a material receiver 41 and an O ring 4, and chucked by chucks 3. An inert gas such as He is introduced from an inert gas inlet 5, and allowed to flow out from a gas orifice 6 inside the O ring 4 to fill the space between the material bottom and the upper surface of the rotor 42. Consequently, the heat produced on the material is radiated toward the cooled cathode. The rotor 42 is rotated by a motor set below the lower cathode 1, and the material is relatively rotated while paralleling the magnetic field direction and the material surface. The reactive ion etching device is appropriately used in the dry developing of a resist for dry development process.
COPYRIGHT: (C)1989,JPO&Japio
JP13706988A 1988-06-03 1988-06-03 Reactive ion etching device Pending JPH01306583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13706988A JPH01306583A (en) 1988-06-03 1988-06-03 Reactive ion etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13706988A JPH01306583A (en) 1988-06-03 1988-06-03 Reactive ion etching device

Publications (1)

Publication Number Publication Date
JPH01306583A true JPH01306583A (en) 1989-12-11

Family

ID=15190175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13706988A Pending JPH01306583A (en) 1988-06-03 1988-06-03 Reactive ion etching device

Country Status (1)

Country Link
JP (1) JPH01306583A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531069B1 (en) 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections
JP4869533B2 (en) * 2000-03-10 2012-02-08 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Processing chambers and apparatus for supporting a substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4869533B2 (en) * 2000-03-10 2012-02-08 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Processing chambers and apparatus for supporting a substrate
US6531069B1 (en) 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections

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