JPH01306580A - Etching device - Google Patents

Abstract

PURPOSE:To improve the suitability of an etching device to maintenance and the etching performance by installing a means to heat a pressure control valve and vacuum pipes connected to an exhaust device and by heating them. CONSTITUTION:An exhaust device 6 for evacuating a treatment chamber 1 is connected to the chamber 1. A feeder 3 for feeding process gas into the chamber 1 is installed. A temp. control unit 19 (heating means) for heating a pressure control valve 5 and vacuum pipes 14, 15 connecting the device 6 to the chamber 1 is also installed and the valve 5 and the pipes 14, 15 are heated. The suitability of the resulting etching device to maintenance and the etching performance can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] This invention applies plasma etching or reactive plasma etching (so-called R, 1.
This relates to an etching device for etching.

[Conventional technology]

FIG. 2 is a sectional view showing a conventional etching apparatus disclosed in, for example, Japanese Patent Publication No. 61-236123. In the figure, (1) is a processing chamber, (2) is a substrate to be processed, and (3) is a gas Supply device, (4) is a high frequency power supply, (5) is a pressure control pulp, (6) is an exhaust device, (7) is an exhaust device for roughing, (8) is a heater, (9) is a temperature sensor, α1 1 is a temperature control unit, (b) is a vacuum gauge, (2) is a lower electrode, 03 is a plasma, and 64 to a0 are vacuum system piping.

Next, the operation will be explained. Exhaust device for rough evacuation (7)
When a predetermined degree of vacuum is reached, the pressure control valve (5) is opened, and after the processing chamber (1) reaches a predetermined degree of vacuum, the exhaust device (6) (usually a turbo molecular pump or mechanical booster pump, etc.) to maintain the processing chamber (1) at a high vacuum. Next, a desired flow rate of gas (single or multiple systems) is introduced into the processing chamber (1) from the gas supply device (3).

Next, the pressure in the processing chamber (11) is set to a desired pressure by the pressure control pulp (5) (monitored by the indicated value of the vacuum gauge (b)), and then the high frequency power source (4) is used to turn on cylindrical frequency power. Introduced into the lower electrode @ on the substrate (2) side, and the processing chamber (1)
Plasma is generated within the etching process to etch the substrate +27. Reaction products and debris such as polymers polymerized in gas plasma adhere to the inner surface of the exhaust system in exhaust system #s (5) to (7). This heater (8) comes with an exhaust system (6).
) is heated to prevent the above-mentioned debris from adhering. or,
The temperature inside the exhaust system (6) is monitored by a temperature sensor (9), and the signal is fed back to the temperature control unit a to control the temperature of the exhaust system (6) at a constant level. (6) The temperature is maintained at an intervertebral temperature that does not deteriorate its characteristics.

However, the pressure control valve (5) and the vacuum system piping α→-〇〇 are not heated, and deposits such as reaction products adhere to their inner surfaces.

[Problem to be solved by the invention]

Conventional etching equipment is configured as described above, which prevents debris from adhering to the exhaust system, but since the pressure control valve and vacuum system piping are not heated, debris may adhere to the exhaust system. Pressure control valves require disassembly and cleaning due to malfunction, and vacuum system piping can become clogged with deposits, requiring disassembly and cleaning, which significantly worsens maintainability. The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide an etching device that prevents debris from being deposited on pressure control valves and vacuum system piping.

[Means to solve the problem]

The etching apparatus according to the present invention is equipped with a heat-sizing means for heating the pressure control valve and the vacuum system piping connected to the exhaust device so that they can be heated.

[Effect]

Since the etching apparatus of this invention heats the pressure-controlled pulp and the vacuum system piping, it is possible to prevent deposits such as reaction products from adhering to them.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, C7) is a heater, C7 is a temperature sensor, and α is a temperature control unit. Note that in the figure, the same reference numerals as in FIG. 2 are the same, so a description thereof will be omitted.

Next, the operation will be explained. The operations up to the etching process are exactly the same as those of the prior art, and therefore the explanation will be omitted. Deposits generated from reaction products, polymers polymerized in gas plasma, unreacted raw gas, etc. adhere to the vacuum system piping α→~0 and the inside of the pressure control valve (5). A heater Q is connected to the heater aη, and the vacuum pipe U→~uQ and the inside of the pressure control valve (5) are controlled by a temperature sensor (to) and a temperature control unit (1*). By heating to a certain temperature, the debris is evaporated and the debris is no longer left behind. Regarding the heating temperature, for example, in the case of aluminum dry etching where there are many reaction products, the main component of the reaction products is klQ.
13, and its sublimation point at 1 atm is 180°C.The sublimation point must be determined in a vacuum, and the heat resistance of O-rings used for pulp, etc. (for example, Pyton 0 If it is a ring, it is 6 if you take into account the temperature below ~100°C)
0″C to 100°C is suitable.Also, exhaust device (6)
For example, in the case of a mechanical booster pump, the operating temperature itself is 60°C to 80''C, and no special heating means is required. , the product of exposing the pump to atmosphere (e.g. when using Bags, BO11
3+ 02 (B20)-B203 "Clogging" is mostly caused by the formation of Oe2 (or aCl), so it is important not to expose the pump to atmosphere. Also, in the case of turbo molecular pumps, the operating temperature itself About 60°C
6. There is almost no build-up of debris, and the clearance is larger than that of a mechanical booster pump. *001
4, 011F3, etc.) is rarely used even in cases where there are many debris.

In addition, in the above embodiment, only one system was used for the heater η, temperature sensor, temperature control unit α value, but if you want to perform more detailed control, pressure control unit (2) and temperature control unit (5) are used.
Control may be performed by dividing into one system for the vacuum system piping α to αQ (or one system for each part).

Alternatively, several temperature sensors may be provided and the average temperature may be used for control. In addition, the power supply system in the processing chamber (1) has been described as a so-called cathode couple system that applies high frequency to the lower electrode @ side, but it may also be the reverse anode couple system, or a type with only one electrode (micro It can be applied to various etching apparatuses such as wave plasma etching apparatuses, downstream type etching apparatuses, ECR etching apparatuses, etc. In addition, in the above embodiment, application to etching apparatuses has been explained, but it can also be applied to plasma CVD apparatuses, sputtering apparatuses, reduced FEOV The apparatus may be used to perform the above-mentioned embodiments and open young fruits.

〔Effect of the invention〕

As described above, according to the present invention, since the pressure control pulp and the vacuum system piping are heated to a constant temperature, reaction products can be prevented from penetrating their inner surfaces, and the valves and piping can be connected to the atmosphere. This has the effect of improving maintainability and etching performance, such as greatly reducing the cleaning work of opening and removing reaction products, and greatly reducing dust generated by reaction products.

[Brief explanation of the drawing]

FIG. 1 is a system explanatory diagram of an etching apparatus according to an embodiment of the present invention, and FIG. 2 is a system explanatory diagram of a conventional etching apparatus. In the figure, (1) is a processing chamber, (2) is a substrate, (3) is a gas supply device, (4) is a high frequency power supply, (5) is a pressure control valve, (7) is a roughing exhaust system, aυ is a vacuum gauge, @
is the lower electrode, α is the plasma, α4 to αQ are the vacuum system piping, (17) is the heater, 08 is the temperature sensor, and Q is the temperature control unit. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] a processing chamber; an exhaust device that evacuates the processing chamber;
An etching apparatus comprising: a gas supply device for supplying a process gas into the processing chamber; and a heat adding means for heating a pressure control valve and vacuum piping connected to the exhaust device.