JPH01300963A - Anesthetic intensity monitor - Google Patents
Anesthetic intensity monitorInfo
- Publication number
- JPH01300963A JPH01300963A JP13226388A JP13226388A JPH01300963A JP H01300963 A JPH01300963 A JP H01300963A JP 13226388 A JP13226388 A JP 13226388A JP 13226388 A JP13226388 A JP 13226388A JP H01300963 A JPH01300963 A JP H01300963A
- Authority
- JP
- Japan
- Prior art keywords
- anesthesia
- humidity
- temperature
- sensitive
- anesthetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003444 anaesthetic effect Effects 0.000 title abstract description 10
- 206010002091 Anaesthesia Diseases 0.000 claims abstract description 91
- 230000037005 anaesthesia Effects 0.000 claims abstract description 91
- 230000008859 change Effects 0.000 claims abstract description 21
- 239000003994 anesthetic gas Substances 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- BCQZXOMGPXTTIC-UHFFFAOYSA-N halothane Chemical compound FC(F)(F)C(Cl)Br BCQZXOMGPXTTIC-UHFFFAOYSA-N 0.000 description 7
- 229960003132 halothane Drugs 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 239000003983 inhalation anesthetic agent Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- IIZPXYDJLKNOIY-JXPKJXOSSA-N 1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCC\C=C/C\C=C/C\C=C/C\C=C/CCCCC IIZPXYDJLKNOIY-JXPKJXOSSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- QRRWWGNBSQSBAM-UHFFFAOYSA-N alumane;chromium Chemical compound [AlH3].[Cr] QRRWWGNBSQSBAM-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000787 lecithin Substances 0.000 description 2
- 229940067606 lecithin Drugs 0.000 description 2
- 235000010445 lecithin Nutrition 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920005990 polystyrene resin Polymers 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- CNUJLMSKURPSHE-UHFFFAOYSA-N trioctadecyl phosphite Chemical compound CCCCCCCCCCCCCCCCCCOP(OCCCCCCCCCCCCCCCCCC)OCCCCCCCCCCCCCCCCCC CNUJLMSKURPSHE-UHFFFAOYSA-N 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- WWUZIQQURGPMPG-UHFFFAOYSA-N (-)-D-erythro-Sphingosine Natural products CCCCCCCCCCCCCC=CC(O)C(N)CO WWUZIQQURGPMPG-UHFFFAOYSA-N 0.000 description 1
- CFWRDBDJAOHXSH-SECBINFHSA-N 2-azaniumylethyl [(2r)-2,3-diacetyloxypropyl] phosphate Chemical compound CC(=O)OC[C@@H](OC(C)=O)COP(O)(=O)OCCN CFWRDBDJAOHXSH-SECBINFHSA-N 0.000 description 1
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920006217 cellulose acetate butyrate Polymers 0.000 description 1
- BAKDLAFAVHBXHW-UHFFFAOYSA-N dioctadecyl phosphite Chemical compound CCCCCCCCCCCCCCCCCCOP([O-])OCCCCCCCCCCCCCCCCCC BAKDLAFAVHBXHW-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- -1 octadecyloxycarbonyl Chemical group 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000021885 response to anesthetic Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WWUZIQQURGPMPG-KRWOKUGFSA-N sphingosine Chemical compound CCCCCCCCCCCCC\C=C\[C@@H](O)[C@@H](N)CO WWUZIQQURGPMPG-KRWOKUGFSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
未発明は麻酔感応素子と温湿度感応素子とを併設するこ
とにより、温度補償及び湿度補償を可能とｌノだ麻酔深
度または麻酔濃度を測定・表示する麻酔強度モニターに
関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is capable of measuring the depth of anesthesia or the concentration of anesthesia by combining an anesthesia sensing element and a temperature/humidity sensing element to enable temperature compensation and humidity compensation. - Concerning the anesthesia intensity monitor to be displayed.
［従来の技術Ｊ
従来、手術のため吸入麻酔を受ける患者に対して安全を
図るためのモニタリングと１．・ては、心電ヤニターな
どが行なｔ）れているか、直接、麻酔ガスの吸入量を測
定するような機器はあまり知られていない。[Prior Art J Conventionally, monitoring for safety of patients receiving inhalation anesthesia for surgery and 1.・There are few known devices that directly measure the amount of anesthetic gas inhaled, such as electrocardiograph monitors.
現在、麻酔濃度の測定機器と１ノでは、置部分析器や麻
酔濃度計かある。Currently, there are two types of devices for measuring anesthesia concentration: the Okibe analyzer and the anesthesia concentration meter.
「発明か解決しようとする課８］
しかしなから、従来から使用されている真穴分析器は大
型で、操作較正か難しく、またガスを吸引してサンプリ
ングするため排気も必要であり、かつ大型のため移動か
難しく、ｆ段室に一台づつ設首することは場所等の制約
から一般に困難であるという問題かあった。“Invention or Problem Solving Section 8” However, the true hole analyzers that have been used in the past are large, difficult to calibrate, require exhaust to sample gases, and are large. Therefore, it was difficult to move them, and it was generally difficult to install one in each F-tier room due to space constraints.
また、従来使用さｔｌている麻酔濃度計は、麻酔ガスか
赤外線を吸収する量を利用して麻酔濃度を算出しており
、またガスを吸引１ノで測定を行なうため測定後のガス
の排気回路か必要であった。そして、吸引するガスの湿
度の影響を取り除く方法としてウォータートラップが使
用されており、連続使用が困難であった。In addition, conventionally used anesthesia concentration meters calculate the anesthesia concentration using the amount of anesthetic gas or infrared rays that is absorbed, and because the measurement is performed by inhaling the gas, it is necessary to exhaust the gas after measurement. A circuit was required. A water trap has been used as a method of removing the influence of humidity of the gas to be sucked, and it has been difficult to use it continuously.
さらに、これらの麻酔濃度計は麻酔ガスの種類によって
、装置上の設定をその度毎に行なう必要があった。Furthermore, these anesthetic concentration meters require settings to be made on the device each time depending on the type of anesthetic gas.
［課題を解決するための手段］
そこで、本発明者は上記した従来の麻酔濃度計の問題点
に鑑み鋭意検討を重ねた結果、麻酔ガスの吸引排気を行
うことなく直接麻酔濃度あるいは深度か測定可能で、し
かも温度補償及び湿度補償を可能な麻酔強度モニターを
見出し、本発明に到達した。[Means for Solving the Problems] Therefore, as a result of extensive studies in view of the problems of the conventional anesthesia concentration meter described above, the present inventor has devised a method to directly measure the anesthesia concentration or depth without suctioning and exhausting the anesthesia gas. The inventors have discovered an anesthesia strength monitor that is capable of temperature compensation and humidity compensation, and have arrived at the present invention.
即ち、本発明によれば、温度及び湿度に感応するが麻酔
ガスには感応しない温湿度感応素子と、麻酔ガスに感応
し且つ温度及び湿度に感応する麻酔感応素子とから構成
される麻酔センサーと、該麻酔センサーに連結され、該
麻酔センサーの静電容量の麻酔ガスに対する変化量に対
応した麻酔深度又は麻酔濃度を表示する電気回路とから
なり、
前記麻酔感応素子の温度・湿度に対する電気的変化量を
前記温湿度感応素子の温度・湿度に対する電気的変化量
で相殺し較正することを特徴とする麻酔強度モニター、
が提供される。That is, according to the present invention, an anesthesia sensor is provided that includes a temperature and humidity sensitive element that is sensitive to temperature and humidity but not sensitive to anesthetic gas, and an anesthesia sensitive element that is sensitive to anesthetic gas and sensitive to temperature and humidity. , an electric circuit connected to the anesthesia sensor and displaying the depth of anesthesia or anesthesia concentration corresponding to the amount of change in the capacitance of the anesthesia sensor with respect to the anesthesia gas; Anesthesia strength monitor, characterized in that the amount is offset and calibrated by the amount of electrical change with respect to temperature and humidity of the temperature and humidity sensing element,
is provided.
本発明においては、麻酔ガスに感応し、且つ温度及び湿
度に感応する麻酔感応素子が、電極、好ましくは櫛形電
極に、レシチン、ケファリン、ジオクタデシル・フォス
ファイト、亜リン酸トリステアリル、１．３−タテトラ
デシルグリセロ−２−フオスフオコリン、ジメチルジオ
クタデシルアンモニウムブロマイド
アンモニオ）エチルオキシベンゾイル）−ジオクタデシ
ル−Ｌ−グルタメイト−フロマイト、ラジウム１．２ー
ビス（オクタデシルオキシカーボニル）−エタン−１−
サルフオネートからなる群から選ばれる少なくとも一種
の物質をライニングして形成されていることが好ましく
、上記ライニング物質のうち、特にレシチンが麻酔ガス
への感応性に優れていることから好ましい。In the present invention, the anesthesia sensing element that is sensitive to anesthetic gas and sensitive to temperature and humidity is provided with an electrode, preferably a comb-shaped electrode, containing lecithin, cephalin, dioctadecyl phosphite, tristearyl phosphite, 1.3 -Tatetradecylglycero-2-phosphocholine, dimethyldioctadecyl ammonium bromide ammonio)ethyloxybenzoyl)-dioctadecyl-L-glutamate-furomite, radium 1.2-bis(octadecyloxycarbonyl)-ethane-1-
It is preferably formed by lining it with at least one substance selected from the group consisting of sulfonates, and among the above-mentioned lining substances, lecithin is particularly preferable because it has excellent sensitivity to anesthetic gas.
一方、温度及び湿度に感応するが麻酔ガスには感応しな
い温湿度感応素子としては、電極、好ましくは櫛形電極
に、ポリスチレン樹脂、セレブシン、スフィンゴシン、
スフィンゴミエリン、酢酸酪酸セルロース、スチレンス
ルホン酸系樹脂、アセテート、セルロース、ポリスチレ
ンスルホン酸塩、ポリアクリル酸塩からなる群から選ば
れる少なくとも一種の物質をライニングして形成されて
いることが好ましい。On the other hand, as a temperature and humidity sensitive element that is sensitive to temperature and humidity but not sensitive to anesthetic gas, polystyrene resin, cerebusine, sphingosine,
It is preferably formed by lining with at least one substance selected from the group consisting of sphingomyelin, cellulose acetate butyrate, styrene sulfonic acid resin, acetate, cellulose, polystyrene sulfonate, and polyacrylate.
ここで麻酔深度とは、外科的刺激によって体を動かさな
い吸入麻酔薬の肺胞気濃度のことを指し、ミニマム ア
ルビオラ− コンセントレージョン（ｍｉｎｉｍｕ＋ｓ
ａｌｖｅｏｌａｒ ｃｏｎｃｅｎｔｒａｔｉｏｎ）
（ＭＡ（：）と称するものである。この値は吸入麻酔
薬の種類により異なり、少ないもの程強力である。Here, the depth of anesthesia refers to the alveolar concentration of an inhaled anesthetic that does not cause the body to move due to surgical stimulation.
alveolar concentration)
(This value is called MA (:). This value varies depending on the type of inhalation anesthetic, and the smaller the value, the stronger it is.
又、幼児ではＭＡＣはやや高くなる。Furthermore, MAC is slightly higher in infants.
麻酔深度（ＭＡＣ）と麻酔薬濃度の関係（麻酔ハンドブ
ックより）
基準値として用いられている。濃度表示において、例え
ばエトレン用気化器にハロタンを入れ、誤用に気付かな
かった場合、ダイヤルによりある設定値を決めると、エ
トレンとハロタンの蒸気圧の違いにより，設定濃度より
高い値のハロタンがエトレンの気化器から出ることにな
り、極めて危険である。しかし、ＭＡＣ表示では、その
様な事故の防止にも有効である。Relationship between depth of anesthesia (MAC) and anesthetic concentration (from Anesthesia Handbook) Used as a reference value. In the concentration display, for example, if you put halothane in a vaporizer for etrene and do not notice that it is being misused, if you set a certain value using the dial, the difference in vapor pressure between etrene and halothane will cause halothane with a higher concentration than etrene to be used. It will come out of the vaporizer and is extremely dangerous. However, the MAC display is effective in preventing such accidents.
［作用］
麻酔ガスを、その麻酔ガスに感応して静電容量か変化す
る物質をコープインクしＣなる麻酔感応素子と、温度及
び湿度に感応するが麻酔ガスには感応しない温湿度感応
素子に接触させ、麻酔感応素子の温度・湿度に対する′
電気的変化量を温湿度感応素子の温度・湿度に対する電
気的変化量で相殺し較正することにより、麻酔ガスの温
Ｉ■−湿度によって影響を受けない正しい麻酔濃度ある
いは麻酔深度を測定・表示する。[Function] Couple ink with a substance whose capacitance changes in response to anesthetic gas, and create an anesthesia sensing element called C, and a temperature and humidity sensing element that is sensitive to temperature and humidity but not to anesthetic gas. In contact with the temperature and humidity of the anesthesia sensing element
By offsetting and calibrating the amount of electrical change with the amount of electrical change with respect to temperature and humidity of the temperature/humidity sensitive element, it is possible to measure and display the correct anesthesia concentration or depth of anesthesia that is not affected by the temperature of the anesthetic gas - humidity. .
［実施例］
以下、・本発明を図示の実施例に基いて更に詳ｔノ〈説
明するが、本発明はこれら実施例に限られるものではな
い。[Examples] Hereinafter, the present invention will be explained in more detail based on the illustrated embodiments, but the present invention is not limited to these embodiments.
第１図は本発明の麻酔感応素子の一例であり、第２図は
第１図のＡ−Ａ’部分拡大断面図を示すものである。FIG. 1 shows an example of the anesthesia sensing element of the present invention, and FIG. 2 shows an enlarged partial cross-sectional view taken along the line AA' in FIG.
図において、１０は櫛形電極からなる麻酔感応素子であ
り、非導電性物質からなる基板ｌｌ−［−にＣｒ、又は
Ａ Ｎ、などから形成される電極素子１２を配置し、そ
の電極素子１２には絶縁層１３か塗布されている。そし
て、さらにその上から麻酔ガスに感応する物質１４をコ
ーティングして構成されているものである。In the figure, reference numeral 10 denotes an anesthesia sensing element consisting of a comb-shaped electrode, and an electrode element 12 made of Cr, AN, etc. is arranged on a substrate ll-[- made of a non-conductive substance. is coated with an insulating layer 13. Further, a substance 14 sensitive to anesthetic gas is coated thereon.
基板１１としては、非導電性物質であればよく、特にそ
の種類は限定されず、例えば、ガラス−エポキシ板、ベ
ークライ１〜板等が挙げられる。The substrate 11 may be any non-conductive material, and its type is not particularly limited. Examples thereof include a glass-epoxy board, a Bakelite 1 board, and the like.
また、絶縁層１，３としては絶縁性物質からなるものて
、例えば窒化珪素（ＳｉＮｘ）、二酸化珪素（ＳｉＯ□
）などが挙げられる。The insulating layers 1 and 3 are made of an insulating material, such as silicon nitride (SiNx), silicon dioxide (SiO□
), etc.
一方、温湿度感応素子も」−記の麻酔感応素子と基本的
な構成は同して、櫛形電極からなっている。麻酔感応素
子と異なるのは、櫛形電極にコーティングされる物質か
、温度及び湿度に感応するが麻酔ガスには感応１ノない
特性な有する点である。On the other hand, the temperature/humidity sensing element also has the same basic structure as the anesthesia sensing element described above, consisting of comb-shaped electrodes. The difference from an anesthesia-sensitive element is that the comb-shaped electrode is coated with a material that is sensitive to temperature and humidity but not sensitive to anesthetic gas.
以上のように作製される麻酔感応素子１０と温湿度感応
素子１５な併設置ノて麻酔センサーと１ノ、第３図のよ
うに麻酔（呼吸）回路に組込むためのアダプター１６に
接続する。The anesthesia sensing element 10 and the temperature/humidity sensing element 15 manufactured as described above are installed together and connected to an adapter 16 for integration into an anesthesia (breathing) circuit as shown in FIG.
次に、麻酔センサーを組込んだ第４図の電気回路につい
て説明する。Next, the electric circuit shown in FIG. 4 incorporating the anesthesia sensor will be explained.
リニアＩＣ２０は標準タイマー回路を２つ含み、抵抗２
１．２２及びキャパシタンス２３とで構成される回路２
４において、規則的な反復パルス信１′ｙのパルス幅か
麻酔感応素子１０の静電容量に依存するようにされてい
る。出力は抵抗２６及びキャパシタンス２７からなる積
分回路で積分された後、増幅器２８．２９でインピーダ
ンス変換されると同時にローパスフィルター３０．３１
を経て出力信号は更に増幅器３２で増幅され、３３以後
の回路で変換器にてデジタル化され、その後演算処理さ
れ表示されるのである。The linear IC20 contains two standard timer circuits, with two resistors
1.22 and capacitance 23
4, the pulse width of the regular repetitive pulse signal 1'y is made to depend on the capacitance of the anesthesia sensitive element 10. The output is integrated by an integrating circuit consisting of a resistor 26 and a capacitance 27, and then impedance-converted by an amplifier 28.29 and simultaneously passed through a low-pass filter 30.31.
The output signal is further amplified by an amplifier 32, digitized by a converter in circuits after 33, and then subjected to arithmetic processing and displayed.
以下、本発明の具体的な実施結果を説明する。Hereinafter, specific implementation results of the present invention will be explained.
（実施例１）
合成脂質の１種であるジオクタフォスファイト１０ｇを
、０．１％エタノール水溶液１００ｃｃの入ったビーカ
ー中に攪拌しながら溶解した。得られた溶液に、陽極５
９本、陰極６１本からなる外観的３ ｍｍＸ ７ ｍｍ
のクロム−アルミニウム（Ｃｒ。(Example 1) 10 g of dioctaphosphite, which is a type of synthetic lipid, was dissolved with stirring in a beaker containing 100 cc of a 0.1% ethanol aqueous solution. Anode 5 is added to the resulting solution.
Appearance: 3 mm x 7 mm, consisting of 9 electrodes and 61 cathodes.
of chromium-aluminum (Cr.
Ａｆｌ）合金製の櫛形電極（ガラス−エポキシ基板を使
用し、絶縁層としてＳｉＮｘか塗布されている）を垂直
に侵し、３０秒後、垂直のまま引き一１ｍげて取り出ｌ
ノ、真空乾燥機により５０°Ｃで１０時間乾繰させ、ジ
オクタフォスファイトでコーティングされた櫛形電極か
らなる麻酔感応素子１０を作製した。Afl) Alloy comb-shaped electrode (using a glass-epoxy substrate and coated with SiNx as an insulating layer) was penetrated vertically, and after 30 seconds, it was pulled back vertically and removed by 1 m.
The material was dried in a vacuum dryer at 50° C. for 10 hours to produce an anesthesia-sensitive element 10 consisting of a comb-shaped electrode coated with dioctaphosphite.
一方、高分子物質の一種であるポリスチレン樹脂１０ｇ
をエタノール１００ｇの入ったビーカー中で攪拌しなが
ら溶解し、得られた溶液を用いて、麻酔感応素子１０作
製と同様の方法により温湿度感応素子１５を作製した。On the other hand, 10g of polystyrene resin, which is a type of polymer material,
was dissolved with stirring in a beaker containing 100 g of ethanol, and using the resulting solution, temperature and humidity sensitive element 15 was produced in the same manner as in the production of anesthesia sensitive element 10.
次いで、第３図のように、画素子を併設して麻酔センサ
ーとし、この麻酔センサーを第４図に示す電気回路を２
つ用いて麻酔感応素子１０及び温湿度感応素子１５をそ
れぞれ接続する。ここで、温湿度感応素子１５は、第４
図の電気回路で麻酔感応素子１０の接続部に接続するの
である。Next, as shown in Figure 3, a pixel element is added to form an anesthesia sensor, and this anesthesia sensor is connected to the electric circuit shown in Figure 4.
The anesthesia sensitive element 10 and the temperature/humidity sensitive element 15 are respectively connected using the same. Here, the temperature/humidity sensing element 15 is the fourth
It is connected to the connection part of the anesthesia sensing element 10 using the electric circuit shown in the figure.
そして：５４図の電気回路２つ、すなわち麻酔感応素子
を接続した電気回路と温湿度感応素子を接続した第４図
の電気回路は、第５図においてＡ／Ｄ変換部４２．４３
を介して接続されている麻酔感応素子４０を含んだ電気
回路部５０及び、温湿度感応素子４１を含んだ電気回路
部５１に対応する。即ち、第５図の電気回路のＡ／Ｄ変
換部４２．４３以後のブロックに於いて制御、演算処理
及び表示等を行なう。And: The two electrical circuits shown in Fig. 54, that is, the electrical circuit connected to the anesthesia sensitive element and the electrical circuit shown in Fig. 4 connected to the temperature/humidity sensitive element, are connected to the A/D converter 42 and 43 in Fig. 5.
This corresponds to an electric circuit section 50 that includes the anesthesia sensing element 40 and an electric circuit section 51 that includes the temperature and humidity sensing element 41 that are connected via the anesthetic sensing element 40 . That is, control, arithmetic processing, display, etc. are performed in the blocks after the A/D converters 42 and 43 of the electric circuit shown in FIG.
次に第５図のブロック図の説明を行なう。Next, the block diagram of FIG. 5 will be explained.
Ａ／Ｄ変換部４２．４３に於いて、麻酔感応素子を含ん
だ電気回路部５０及び温湿度感応素子を含んだ電気回路
部５１からのアナログ信号をデジタル信号にアナログ−
デジタル変換か行なわれ。In the A/D conversion sections 42 and 43, the analog signals from the electric circuit section 50 including the anesthesia sensing element and the electric circuit section 51 including the temperature and humidity sensing element are converted into digital signals.
Digital conversion is done.
Ｉ１０変換部４４にデジタル信号が入力される。A digital signal is input to the I10 converter 44.
Ｉ１０変換部４４とＣＰＵ部４５はデータのやりとりを
行なう。又、ＣＰＵ部４５はＲＯＭ部４６が内蔵してい
る第５図の回路全体の動作の制御・管理の為のプログラ
ム、及びあらかじめ記憶させておいた温湿度感応素子の
温湿度依存性のデータを取り込み、ＲＡＭ部４７に蓄積
記憶される測定時のデータ及びプログラムを逐次取り込
んてデータの演算処理を行なう。The I10 conversion section 44 and the CPU section 45 exchange data. Further, the CPU section 45 stores a program for controlling and managing the operation of the entire circuit shown in FIG. The measurement data and program stored and stored in the RAM section 47 are sequentially fetched and arithmetic processing is performed on the data.
演算処理されたデータは再びＩ１０変換部４４を介し、
デイスプレィ（表示）部４９に向けて出力される。その
間にラッチ部４８でラッチを行ない、デイスプレィ部４
９でスタテック（静的）な表示か行なわれるのである。The arithmetic-processed data is again passed through the I10 converter 44,
The signal is output toward the display section 49. During this time, the latch section 48 latches the display section 4.
9, a static display is performed.
従って、第４図、第５図に示す夫々の電気回路を併わせ
たものか、麻酔強度モニターを構成するのである。この
電気回路中のメモリー用ＩＣ（第５図中のＲＯＭ部）４
６中には、予め測定しておいた麻酔感応素子１０の温湿
度に対する変化量を記憶させ、かつ予め測定しておいた
温湿度感応素子１５の温湿度に対する変化量を記憶させ
ておき、メモリー用ＩＣ４６にプロクラムされた手順（
第６図参照）に沿った処理を行ない、得られた電位差を
表示させる。第６図に示すように、その処理方法は、所
定の温湿度において、温湿度感応素子１５における温湿
度に対する変化量にある倍数（例えば、ｋ）を乗じ、麻
酔感応素子１０の温湿度に対する変化量と同量になる様
にする。そして温湿度感応素子１５の変化量を反転し、
麻酔感応素子１０の変化量と加算を行ない、温湿度によ
る変化量を相殺させるのである。従って、これにより表
示される麻酔センサーの変化量は麻酔ガスに反応した変
化量となる。Therefore, the combination of the electric circuits shown in FIGS. 4 and 5 constitutes an anesthesia strength monitor. Memory IC (ROM part in Figure 5) in this electric circuit 4
6, the amount of change in temperature and humidity of the anesthesia sensing element 10 measured in advance is stored, and the amount of change in temperature and humidity of the temperature and humidity sensing element 15 measured in advance is stored in the memory. The procedure programmed into IC46 for
(see FIG. 6), and the resulting potential difference is displayed. As shown in FIG. 6, the processing method is to multiply the amount of change in temperature and humidity in the temperature and humidity sensitive element 15 by a certain multiple (for example, k) at a predetermined temperature and humidity, and Make sure the amount is the same. Then, the amount of change in the temperature and humidity sensing element 15 is reversed,
The amount of change in the anesthesia sensing element 10 is added to cancel the amount of change due to temperature and humidity. Therefore, the amount of change in the anesthetic sensor displayed thereby is the amount of change in response to the anesthetic gas.
この麻酔強度モニターにおける麻酔センサーを流量５１
／ｍｉｎ、で流れる０２ガス中にさらし、湿度及び揮発
性吸入麻酔薬であるハロタン（Ｈａｌｏｔｈａｎｅ）
（ＣＦ３ＣＨＣ文Ｂｒ）のガス濃度を変化させ、その時
々の、麻酔感応素子ｌＯから得られた静電容量の変化に
対応した電位差を第７図に、温湿度感応素子１５から得
られた静電容量の変化に対応した電位差を第８図に、及
び実際に麻酔強度モニターに表示される値（電位差）を
第９図に示した。The anesthesia sensor in this anesthesia intensity monitor has a flow rate of 51
/min, exposed to humidity and the volatile inhalation anesthetic Halothane.
Figure 7 shows the potential difference corresponding to the change in capacitance obtained from the anesthesia sensing element 15 when changing the gas concentration of (CF3CHC Br). The potential difference corresponding to the change in capacity is shown in FIG. 8, and the value (potential difference) actually displayed on the anesthesia strength monitor is shown in FIG.
（実施例２）
高分子物質の一種である亜リン酸トリステアリルｌｏｇ
を１％テトラヒドロフラン（ＴＨＦ）水溶液１００ｃｃ
の入ったビーカー中で攪拌しながら溶解した。得られた
溶液に陽極５９本、陰極６１本から成る外観的３ Ｘ
７ ｍｍ２のクロム−アルミニウム（Ｃｒ−ＡＭ）合金
製の櫛形電極（ガラス−エポキシ基板を使用し、かつ絶
縁層としてＳｉＮｘが塗布されている）を垂直に浸し、
３０秒後爪直に引き上げて取り出し、真空乾燥機で５０
°Ｃ１１０時間乾燥させた。この櫛形電極を麻酔感応素
子ｉｏとした。(Example 2) Log of tristearyl phosphite, a type of polymer substance
100cc of 1% tetrahydrofuran (THF) aqueous solution
Dissolved in a beaker with stirring. The resulting solution has an external appearance of 3X consisting of 59 anodes and 61 cathodes.
A 7 mm2 chromium-aluminum (Cr-AM) alloy comb-shaped electrode (using a glass-epoxy substrate and coated with SiNx as an insulating layer) was immersed vertically.
After 30 seconds, pull it straight up to the nail, take it out, and dry it in a vacuum dryer for 50 minutes.
It was dried at 110°C for 110 hours. This comb-shaped electrode was used as an anesthesia sensing element io.
そして、この麻酔感応素子ｉｏと市販の温湿度センサー
素子１５’を、第１０図のように併設し、この部分を麻
酔センサーとした。Then, this anesthesia sensing element io and a commercially available temperature/humidity sensor element 15' were installed together as shown in FIG. 10, and this part was used as an anesthesia sensor.
次に、この麻酔センサーを、第４図、第１０図および第
１１図に示す如く、温湿度センサ−１７の外部出力と、
麻酔感応素子１０からアンプを通して得られた出力とを
演算処理しうる第１２図の電気回路に組み込み、麻酔強
度モニターとした。Next, this anesthesia sensor is connected to the external output of the temperature/humidity sensor 17 as shown in FIGS. 4, 10, and 11.
The output obtained from the anesthesia sensing element 10 through an amplifier was incorporated into an electric circuit shown in FIG. 12 capable of processing the output, thereby forming an anesthesia strength monitor.
ここで、第１１図中のアンプとは第４図の電気回路のこ
とである。Here, the amplifier in FIG. 11 refers to the electric circuit in FIG. 4.
第１２図に示す電気回路中のメモリー用ＩＣ（即ち、Ｒ
ＯＭ）６１中に、予め測定しておいた温湿度センサ−１
７の外部出力から得られる温湿度に対する変化量を記憶
させておき、且つ予め測定しておいた麻酔感応素子ｌＯ
の温湿度に対する変化量を記憶させておいた。The memory IC (i.e. R
Temperature and humidity sensor-1 that has been measured in advance during OM) 61
Anesthesia-sensitive element lO, which stores the amount of change in temperature and humidity obtained from the external output of No. 7 and measures it in advance.
The amount of change in temperature and humidity was memorized.
ｆ：Ｌノて、メ千り・−川ＩＣ６１にブＶトタラムされ
た千ＩｆｆＱ （第１３図参照）に沿った処理を行ない
、得られた電位差を表示させる。第１３［Ａに示すよう
に、その処理力Ｕ、は温湿度センサ−１７に、Ｊ、ＱＭ
ｉ度を３１１！定ｌ〜・、その温湿度での麻酔感応素子
１０の変化量を減することで温湿度による影響を除去す
るの゛（ある。f:L, the process is performed according to IffQ (see FIG. 13) applied to the IC 61, and the obtained potential difference is displayed. As shown in 13th [A, the processing power U, J, QM
311 degrees! It is possible to eliminate the influence of temperature and humidity by reducing the amount of change in the anesthesia-sensitive element 10 at a certain temperature and humidity.
この麻酔強度ヤニターの麻酔セン・リーを流量５（１／
ｍｉｎ、て流れる０２ガス中にさらＩ７．湿度及びカス
揮発性吸入麻酔薬であるハロタン（ｔｌａ ｌｏ ｔｌ
ｉａｎｅ）（ＣＦ：＋ＣｔｌＣ文１（ｒ）の刀ス濃度を
変化さ１±、その時々の麻酔強度モニターに表示される
値〔外部出力（電位差）〕を第１４図に示１７た。The anesthesia strength of this anesthesia is 5 (1/
02 gas flowing at 17 min. Halothane (tla lo tl), a humidity and gas volatile inhalation anesthetic
Figure 14 shows the values [external output (potential difference)] displayed on the anesthesia strength monitor at each time when the concentration of the drug (CF:+CtlC 1(r) was changed by 1±).
また、麻酔感応素子１０の温湿度に対する変化を第１５
図にホＩノだ。In addition, the change in temperature and humidity of the anesthesia sensing element 10 is
It's obvious from the picture.
［発明の効果］
以上説明したように、本発明によれば、麻酔・ガスの吸
引排気を行うことなく直接麻酔濃度あるいは深度を測定
することかて、：＊、しかも麻酔・ガスの温度及び湿度
の影響な受ない測定か口ｆ能であるという利点な有する
。[Effects of the Invention] As explained above, according to the present invention, it is possible to directly measure the anesthesia concentration or depth without suctioning and exhausting the anesthesia/gas. It has the advantage of being unaffected by measurement and oral function.
第１図は本発明の麻酔感応素子の−・例を示す平面図、
第２図は第１図のＡ−Ａ′部分拡大断面図、第３図は麻
酔感応素子と温湿度感応素子を併設置ノだ麻酔センサー
の例を示す説明図、第４図は麻酔感応素子まｌ−・は温
湿度感応素子を接続する電気回路を示す回路図、第５図
は第４図の簡略図を含めた電気回路に続くフロック図、
第６図はプログラムされた手順を示すブロック図、第７
図は麻酔感応素子のハロタンに対する感応度を示すクラ
ブ、第８図は温湿度のハロタンに対する感応度を示すグ
ラフ、第９図は麻酔強度モニターに表示される感応度を
示すグラフ、第１０図及び第１１図は人々麻酔感応素ｆ
−と温湿度感応素子を１Ｊ１設した麻酔センサーの他の
例を示す説明図、第１２図は温湿１隻センサーの外部出
力と麻酔感応素子−からアンプを通Ｉノだ得られた出力
とを演算処理１″る電気回路のフロック図、第１３図は
プロダラムされＩ；−手１１１ｆｉを示すフロック図、
第１４図は麻酔強度モニターに表示される感応度を示す
グラフ、第１５図は麻酔感応素子の温湿度に対する変化
を示すクラブである。。
１０・・・麻酔感応素−ｆ、１１・・・基板、１２・・
・電極素子、１３・・・絶縁層、１４・・・麻酔感応物
質、１５・・・温湿ＪＪ）２感応素子、１６・・・アタ
ブター、１７・・・温湿１隻センサー、４０・・・麻酔
感応素子、４１・・・温湿度感応素子、４２．４３・・
・Ａ／Ｄ変換部、４４・・・Ｉ′１０変換部、４５・・
・ＣＰＵ部、４６・・・ＲＯＭ部、４７・・・ＲＡＭ部
、４８・・・ラッチ部、４９・・・デイスプレィ部、５
０．５１・・パ市気回路部、５５・・・麻酔感応素ｆ、
５６，５７．５８・・・Ａ／Ｄ変喚部、５９・・・Ｉ１
０変換部、６０・・・ＣＰＵ部、６１・・・ＲＯＭ部、
６２・・・ＲＡＭ部、６３・・・ラッチ部、６４・・・
デーイスブ１／イ部、６５・・・電気回路部、６６・・
・温湿１隻センサー（市（仮）。FIG. 1 is a plan view showing an example of the anesthesia sensing element of the present invention;
Figure 2 is an enlarged cross-sectional view of part A-A' in Figure 1, Figure 3 is an explanatory diagram showing an example of an anesthesia sensor in which an anesthesia sensing element and a temperature/humidity sensing element are installed together, and Figure 4 is an anesthesia sensing element. 1-. is a circuit diagram showing the electric circuit connecting the temperature and humidity sensing element, and FIG. 5 is a block diagram following the electric circuit including the simplified diagram of FIG. 4.
Figure 6 is a block diagram showing the programmed procedure;
The figure shows a club showing the sensitivity of the anesthesia sensitive element to halothane, Fig. 8 is a graph showing the sensitivity of temperature and humidity to halothane, Fig. 9 is a graph showing the sensitivity displayed on the anesthesia strength monitor, Figs. Figure 11 shows the human anesthesia sensitizer f.
An explanatory diagram showing another example of an anesthesia sensor in which one temperature and humidity sensing element is installed. Fig. 13 is a block diagram of an electric circuit that performs arithmetic processing 1'';
FIG. 14 is a graph showing the sensitivity displayed on the anesthesia intensity monitor, and FIG. 15 is a club showing changes in temperature and humidity of the anesthesia sensing element. . 10...Anesthetic sensitizer-f, 11...Substrate, 12...
- Electrode element, 13... Insulating layer, 14... Anesthetic sensitive substance, 15... Temperature/humidity JJ) 2 sensitive element, 16... Attabuter, 17... Temperature/humidity 1 sensor, 40...・Anesthesia sensitive element, 41... Temperature/humidity sensitive element, 42.43...
・A/D conversion section, 44...I'10 conversion section, 45...
・CPU section, 46... ROM section, 47... RAM section, 48... Latch section, 49... Display section, 5
0.51...Pacific circuit part, 55...Anesthesia sensitizer f,
56,57.58...A/D conversion part, 59...I1
0 conversion section, 60... CPU section, 61... ROM section,
62...RAM section, 63...Latch section, 64...
D1/A part, 65... Electric circuit part, 66...
・One temperature and humidity sensor (city (tentative)).
Claims (1)
い温湿度感応素子と、麻酔ガスに感応し且つ温度及び湿
度に感応する麻酔感応素子とから構成される麻酔センサ
ーと、 該麻酔センサーに連結され、該麻酔センサーの静電容量
の麻酔ガスに対する変化量に対応した麻酔深度又は麻酔
濃度を表示する電気回路と からなり、 前記麻酔感応素子の温度・湿度に対する電気的変化量を
前記温湿度感応素子の温度・湿度に対する電気的変化量
で相殺し較正することを特徴とする麻酔強度モニター。(1) An anesthesia sensor consisting of a temperature and humidity sensitive element that is sensitive to temperature and humidity but not to anesthetic gas, and an anesthesia sensitive element that is sensitive to anesthetic gas and sensitive to temperature and humidity; an electric circuit that is connected to the anesthesia sensor and displays the depth of anesthesia or anesthesia concentration corresponding to the amount of change in the capacitance of the anesthesia sensor with respect to the anesthetic gas; An anesthesia strength monitor characterized by canceling and calibrating electrical changes in temperature and humidity of a sensing element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13226388A JPH01300963A (en) | 1988-05-30 | 1988-05-30 | Anesthetic intensity monitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13226388A JPH01300963A (en) | 1988-05-30 | 1988-05-30 | Anesthetic intensity monitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01300963A true JPH01300963A (en) | 1989-12-05 |
Family
ID=15077190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13226388A Pending JPH01300963A (en) | 1988-05-30 | 1988-05-30 | Anesthetic intensity monitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01300963A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003028824A (en) * | 2001-07-16 | 2003-01-29 | Denso Corp | Capacitive humidity sensor |
| JP2003516539A (en) * | 1999-12-08 | 2003-05-13 | ゼンジリオン アクチエンゲゼルシャフト | Capacitive sensor |
| US8633047B2 (en) | 2011-09-02 | 2014-01-21 | Sensirion Ag | Method for manufacturing a sensor chip |
| US10996183B2 (en) | 2016-07-22 | 2021-05-04 | Sharp Kabushiki Kaisha | Detection device and method of controlling detection device |
-
1988
- 1988-05-30 JP JP13226388A patent/JPH01300963A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003516539A (en) * | 1999-12-08 | 2003-05-13 | ゼンジリオン アクチエンゲゼルシャフト | Capacitive sensor |
| JP2003028824A (en) * | 2001-07-16 | 2003-01-29 | Denso Corp | Capacitive humidity sensor |
| JP4501320B2 (en) * | 2001-07-16 | 2010-07-14 | 株式会社デンソー | Capacitive humidity sensor |
| US8633047B2 (en) | 2011-09-02 | 2014-01-21 | Sensirion Ag | Method for manufacturing a sensor chip |
| US9140740B2 (en) | 2011-09-02 | 2015-09-22 | Sensirion Ag | Sensor chip and method for manufacturing a sensor chip |
| US10996183B2 (en) | 2016-07-22 | 2021-05-04 | Sharp Kabushiki Kaisha | Detection device and method of controlling detection device |
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