JPH01294866A - Formation of amorphous silicon film - Google Patents
Formation of amorphous silicon filmInfo
- Publication number
- JPH01294866A JPH01294866A JP12452688A JP12452688A JPH01294866A JP H01294866 A JPH01294866 A JP H01294866A JP 12452688 A JP12452688 A JP 12452688A JP 12452688 A JP12452688 A JP 12452688A JP H01294866 A JPH01294866 A JP H01294866A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- amorphous silicon
- silicon film
- raw material
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 28
- 230000015572 biosynthetic process Effects 0.000 title description 12
- 239000002994 raw material Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 230000004913 activation Effects 0.000 abstract description 2
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- 229910007264 Si2H6 Inorganic materials 0.000 abstract 1
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 48
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 241000238366 Cephalopoda Species 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明はアモルファスシリコン膜を形成するに好適な形
成方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a method suitable for forming an amorphous silicon film.
＃）従来の技術
一般に、グロー放電を用いて原料ガスを分解し、基板上
に所望のアモルファス半導体膜を形成する技術は、太陽
電池や成子写真感光体用のアモルファスシリコン膜の形
成に用いられている。太陽電池を製造するに際しては、
平行平板電極の一方に高周波電力を付与し、接地されて
いる他方の平行平板電極との間にグロー放”シを生起さ
せて膜形成用原料ガスとしてのＳｉＨ４ガスを分解する
ことによって、他方の平行平板電極上に配置された基板
表面にアモルファスシリコン膜を形成する（％公昭５５
−５７７１８号公報に詳しい）。#) Conventional technology Generally, the technology of using glow discharge to decompose raw material gas and forming a desired amorphous semiconductor film on a substrate is used to form amorphous silicon films for solar cells and Seiko photoreceptors. There is. When manufacturing solar cells,
By applying high-frequency power to one of the parallel plate electrodes and causing a glow emission between it and the other grounded parallel plate electrode to decompose the SiH4 gas as the raw material gas for film formation, Forming an amorphous silicon film on the surface of the substrate placed on the parallel plate electrodes (% Kosho 55
-57718 for details).
ｆ→ 発明が解決しようとする課題
こうしたアモルファスシリコン膜の形成技術において、
要求されることの１つに成膜速度の向上がある。斯る成
膜速度を向上させる方法として、従来は、■電極に付与
する高周波電力を高魔力とすること、■原料ガスである
３ ｉＨ４ガスの供給流量を大きくすることあるいは、
■バランスガスとしてＡｒガスを添加すること等が考え
られている。しかし乍ら、上記■の方法では膜の表面が
白濁するというように膜質が劣化し、上記■の方法では
ｓ １ｌ（４ガスを無駄に使用してしまう。更に、上記
■の方法ではフレークが多量に発生して膜質が劣化して
しまう。f→ Problems to be solved by the invention In such amorphous silicon film formation technology,
One of the requirements is to improve the film formation rate. Conventionally, methods for increasing the film formation rate include: (1) increasing the high-frequency power applied to the electrodes, (2) increasing the supply flow rate of 3iH4 gas, which is the raw material gas;
(2) Adding Ar gas as a balance gas has been considered. However, in the method (2) above, the film quality deteriorates such that the surface of the film becomes cloudy, and in the method (2) above, s1l (4 gas) is wasted.Furthermore, in the method (2) above, flakes are It is generated in large quantities and the film quality deteriorates.
以上のように、従来の成膜速度の向上技術は十分なもの
でない。As described above, conventional techniques for improving film formation speed are not sufficient.
に）課題を解決するための手段
本発明は、反応室内に配された放ｔ！Ｌｄ極に１力を供
給することにより放電を発生させてアモルファスシリコ
ン膜形成用原料ガスを分解し、上記反応室内の基板上に
アモルファスシリコン膜ヲ形成する方法において、上記
原料ガスにＸｅガスを添加したことを特徴とする。2) Means for Solving the Problems The present invention provides a means for solving the problems. A method for forming an amorphous silicon film on a substrate in the reaction chamber by generating a discharge by supplying one force to an Ld electrode to decompose a raw material gas for forming an amorphous silicon film on a substrate in the reaction chamber, in which Xe gas is added to the raw material gas. It is characterized by what it did.
更に、上記Ｘｅガスの添加量は、上記原料ガスに対して
２ｖｏ１％以下であることを特ぬとする。Further, it is specified that the amount of the Xe gas added is 2 vol % or less with respect to the raw material gas.
更に、上記放ｔ１１Ｌａに供給されるイカは１００ｍＷ
／、Ｊ乃至１５０ ｍＷＺ−であることを特徴とする。Furthermore, the squid supplied to the above-mentioned t11La has a power of 100mW.
/, J to 150 mWZ-.
（ホ）作 用
本発明によれば、アモルファスシリコン膜形成用原料ガ
スに添刀口されたＸｅガスが、原料ガスを分解して活性
化させることを促進し、従って、アモルファスシリコン
膜の成膜速度が向上する。(E) Effect According to the present invention, the Xe gas added to the raw material gas for amorphous silicon film formation promotes decomposition and activation of the raw material gas, and therefore increases the deposition rate of the amorphous silicon film. will improve.
（へ）実施例
第１図は本発明方法を用いて円筒状基体にアモルファス
シリコン膜を形成して、イ子写真感元体を製造する製造
装置を示す模式図である。Embodiment 1 FIG. 1 is a schematic diagram showing a manufacturing apparatus for manufacturing a photoreceptor by forming an amorphous silicon film on a cylindrical substrate using the method of the present invention.
ｉｌｌは減圧可能に密閉され交円周状の反応室、＋２）
は反応室＋１１の内側壁に沿つて反応室Ｉｌｌと同心的
に配置された円筒状放電電極、（３）は反応室（１）の
中心に植立された円筒状基体、（４）は円筒状基体（３
１を保持する保持部材、＋５１は保持部材（４）を回転
駆動する駆動モータ、（６）は円筒状基体（３）をその
内部から１００〜５００’Ｃ程度に加熱するヒータ、（
７）はアモルファスシリコン膜形成用原料ガスであるＳ
ｉＨ４ガス、８ｉ２Ｈｄガス、ＳｉＦ４ガス、５ｉ（１
４ガス等を供給する原料ガス供給源、（８１はＸｅガス
供給源、（９）は原料ガス供給源（７）及びＸｅガス供
１拾源（８）からのガスを反応室（１１内に導入する導
入管、（１１はパルプ（１１１，真空ボンデＣ１ｚから
成る排気系で、反応室（１１円を一旦高真空に排気した
後、供給ガスの圧力を所定の値に保持する。ｕ３１は放
電電極（２）に高周波電力を付与する高周波電源である
。ill is a cross-circular reaction chamber that is sealed so that pressure can be reduced, +2)
is a cylindrical discharge electrode arranged concentrically with reaction chamber Ill along the inner wall of reaction chamber +11, (3) is a cylindrical base set in the center of reaction chamber (1), and (4) is a cylindrical shaped substrate (3
1, +51 is a drive motor that rotationally drives the holding member (4), (6) is a heater that heats the cylindrical base (3) from the inside to about 100-500'C;
7) is S, which is a raw material gas for forming an amorphous silicon film.
iH4 gas, 8i2Hd gas, SiF4 gas, 5i (1
(81 is a Xe gas supply source, (9) is a raw material gas supply source that supplies four gases, etc., and (9) is a source gas supply source that supplies gas etc. The introduction pipe (11) is an exhaust system consisting of a vacuum bonder C1z, and after the reaction chamber (11) is once evacuated to a high vacuum, the pressure of the supplied gas is maintained at a predetermined value. This is a high frequency power source that applies high frequency power to the electrode (2).
斯る製造装置において、アルミニウム等からなる円筒状
基体（３）を保持部材（４）に装着した後、反応室ｉｌ
ｌ内を気密に閉塞し、排気系化を用いて反応室［１１内
を高真空（例えば、１ ｘ １０ ’Ｔｏｒｒ程度）に
減圧排気する。そして、円筒状基体（３）内に配されて
いるヒータ（６）により円筒状基体（３）を１００〜５
００°Ｃの所定温度に加熱する。In such a manufacturing apparatus, after the cylindrical substrate (3) made of aluminum or the like is mounted on the holding member (4), the reaction chamber is
The inside of the reaction chamber [11] is airtightly closed, and the inside of the reaction chamber [11] is evacuated to a high vacuum (for example, about 1 x 10' Torr) using an exhaust system. Then, the heater (6) disposed inside the cylindrical base (3) heats the cylindrical base (3) to 100 to 50%.
Heat to a predetermined temperature of 00°C.
然る後、原料ガス供給源１７）及びＸｅガス供給源（８
）から導入管（９）を通じてアモルファスシリコン膜形
成用原料ガスとしての５ｉＨａガスを１５０ＳＣＣＭ、
Ｘｅガスを１．５８ｃｃＭに流量制御し次状態で反応’
Ｍｔｌｌ内に導入して、圧力を０．３Ｔｏｒｒに保持す
る。After that, the raw material gas supply source 17) and the Xe gas supply source (8
) through the introduction pipe (9) to 150 SCCM of 5iHa gas as a raw material gas for forming an amorphous silicon film.
Control the flow rate of Xe gas to 1.58ccM and react in the following state.
The pressure is maintained at 0.3 Torr.
こうした状態で、高周波電源＋（３）によυ１００〜１
５０ ｍＷＺ−で放電電極（２）に高周波電力を付与す
ることにより、円筒状基体１３）の表面にアモルファス
シリコン膜が形成される。In this state, the high frequency power supply + (3)
By applying high frequency power to the discharge electrode (2) at 50 mWZ-, an amorphous silicon film is formed on the surface of the cylindrical substrate 13).
以上のように、本発明方法の特徴は、アそルファスシリ
コン膜形成用原料ガス（上記夷ｌ布例では８ ｉ Ｈ’
ガス）にＸｅガスを添加したことにある。As described above, the feature of the method of the present invention is that the raw material gas for forming an amorphous silicon film (in the above example, 8 i H'
This is due to the addition of Xe gas to the
斯るＸｅガスの添加によって、アモルファスシリコン膜
の成膜速度が向上する。The addition of such Xe gas improves the deposition rate of the amorphous silicon film.
第２図はＳ ｉＨ４ガスに対するＸｅガスの温情と成膜
速度との関係を示したものである。同図から見て、Ｘｅ
ガスの添加流量比がＳ ｉＨａガスに対して２Ｖｏｌ％
以下の状態で、アモルファスシリコン膜の成膜速度は、
Ｘｅガスを添刀Ωしない場合のそれ（８μｆｎ／Ｈ）よ
シ大きくなる。なお、同図における成膜条件は、
付与高周波１力密度： １２５ ＷＩＷ／ａｌ圧
カニ０．５Ｔｏｒｒ
Ｓ ｉＨ４ガス流量：１５０ＳＣＣＭ
である。FIG. 2 shows the relationship between the temperature of Xe gas and the film formation rate with respect to SiH4 gas. From the same figure, Xe
Gas addition flow rate ratio is 2Vol% to SiHa gas
Under the following conditions, the deposition rate of the amorphous silicon film is
It is larger than that when Xe gas is not added (8 μfn/H). The film forming conditions in the same figure are as follows: Applied high frequency 1 force density: 125 WIW/al pressure
Crab 0.5 Torr SiH4 gas flow rate: 150 SCCM.
更に、第６図は放１電極（２）に付与される高周波電力
密度と成膜速度との関係を示すものである。Furthermore, FIG. 6 shows the relationship between the high frequency power density applied to the first electrode (2) and the film formation rate.
同図からすると、高周波電力密度が１００〜１５０ｍＷ
／−の状態の時、アモルファスシリコン膜の成膜速度は
大きくなっている。なお、他の成膜条件は、
圧 カニ［１３Ｔｏｒｒ
Ｓ ｉＨ４ガス流ｔ：１５０８ｃｃＭ
Ｘｅガス流ｉ： ｔ５ｓｃｃＭ
である。From the same figure, the high frequency power density is 100 to 150 mW.
/-, the deposition rate of the amorphous silicon film is high. The other film forming conditions were as follows: pressure: 13 Torr SiH4 gas flow t: 1508 ccM Xe gas flow i: t5 sccM.
こうして、形成されたアモルファスシリコン膜は、白濁
することなく、良好な膜特性を有していた。The amorphous silicon film thus formed did not become cloudy and had good film properties.
（ト〕 発明の効果
本発明はアモルファスシリコン膜形成用原料ガス１ＣＸ
ｅガスを添加したので、アモルファスシリコン膜の膜特
性を劣化させることなく、成膜速度を大きくすることが
できる。(g) Effects of the invention The present invention provides raw material gas 1CX for forming an amorphous silicon film.
Since e-gas is added, the film formation rate can be increased without deteriorating the film characteristics of the amorphous silicon film.
第１図は本発明形成方法を適用した製造装置を示す模式
図、第２図は５ｉ）（ｎガスに対するＸｅガスの流盪と
成膜速度との関係を示す特性図、第６図は高周喋イカ密
度と成膜速度との関係を示す特性図である。
（１）・・・反応室、 （２）・・・円筒状放ｔａ極、
（訃・・円筒状基体、 （７１・・・原料ガス供給源
、 （８）・・・Ｘｅガス供給源、 （（３）・・・
高周波電源。Fig. 1 is a schematic diagram showing a manufacturing apparatus to which the present invention forming method is applied, Fig. 2 is a characteristic diagram showing the relationship between the flow of Xe gas and film formation rate with respect to n gas, and Fig. 6 is a It is a characteristic diagram showing the relationship between circumferential squid density and film formation rate. (1)...Reaction chamber, (2)...Cylindrical Ta electrode,
(End...Cylindrical substrate, (71... Raw material gas supply source, (8)... Xe gas supply source, ((3)...
High frequency power supply.
Claims (3)
とにより放電を発生させてアモルファスシリコン膜形成
用原料ガスを分解し、上記反応室内の基板上にアモルフ
ァスシリコン膜を形成する方法において、上記原料ガス
にＸｅガスを添加したことを特徴とするアモルファスシ
リコン膜の形成方法。(1) In a method of generating an electric discharge by supplying electric power to a discharge electrode arranged in a reaction chamber to decompose a raw material gas for forming an amorphous silicon film, and forming an amorphous silicon film on a substrate in the reaction chamber, A method for forming an amorphous silicon film, characterized in that Xe gas is added to the source gas.
２Ｖｏｌ％以下であることを特徴とする第１項記載のア
モルファスシリコン膜の形成方法。(2) The method for forming an amorphous silicon film according to item 1, wherein the amount of the Xe gas added is 2 vol % or less with respect to the source gas.
ｍ＾２乃至１５０ｍＷ／ｃｍ＾２であることを特徴とす
る第１項記載のアモルファスシリコン膜の形成方法。(3) The power supplied to the above discharge electrode is 100mW/c
2. The method for forming an amorphous silicon film according to claim 1, wherein the amorphous silicon film has a power of m^2 to 150 mW/cm^2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63124526A JP2562662B2 (en) | 1988-05-20 | 1988-05-20 | Method for forming amorphous silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63124526A JP2562662B2 (en) | 1988-05-20 | 1988-05-20 | Method for forming amorphous silicon film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01294866A true JPH01294866A (en) | 1989-11-28 |
| JP2562662B2 JP2562662B2 (en) | 1996-12-11 |
Family
ID=14887665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63124526A Expired - Lifetime JP2562662B2 (en) | 1988-05-20 | 1988-05-20 | Method for forming amorphous silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2562662B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5246744A (en) * | 1990-11-30 | 1993-09-21 | Central Glass Company, Limited | Method of forming thin film of amorphous silicon by plasma cvd |
-
1988
- 1988-05-20 JP JP63124526A patent/JP2562662B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5246744A (en) * | 1990-11-30 | 1993-09-21 | Central Glass Company, Limited | Method of forming thin film of amorphous silicon by plasma cvd |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2562662B2 (en) | 1996-12-11 |
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