JPH01293543A - Semiconductor device - Google Patents

Abstract

PURPOSE:To effectively prevent a GK short-circuit without increasing its cost by fitting a guide ring for positioning a semiconductor element by fitting on the element, on a gate ring. CONSTITUTION:In a semiconductor device having a semiconductor element 1 including a gate electrode on the outer periphery of its one side face, a cathode electrode on the inner periphery and an anode electrode on the other side face, a cathode conductor 2 so pressed as to be brought into contact only with the cathode electrode, an anode conductor 3 integrated with the conductor 2 through an insulator 6 and so pressed as to be brought into contact with the anode electrode, a gate ring 8 fitted on in a state electrically insulated from the conductor 2 and so pressed as to be brought into contact only with the gate electrode, a control signal transmitting member 13 for transmitting a control signal to the gate electrode through the ring 8, and a guide ring 15 for positioning the element 1 by fitting on the element 1, the ring 15 is fitted on the ring 8.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention involves pressing a gate ring against a gate electrode formed on the outer periphery of one side of a semiconductor element, and transmitting a control signal to the gate electrode via the gate ring. The present invention relates to a semiconductor device configured to do so.

(Prior Art) FIG. 2 is a longitudinal sectional view showing one of the conventional examples of this type of semiconductor device. In the figure, a semiconductor element 1 has a disk shape, and a reinforcing plate 1 made of a conductive material and also serving as an anode electrode.
It is constructed by bonding a semiconductor substrate 1b onto a with a suitable brazing material. The upper surface of the semiconductor substrate 1b is a cathode surface formed by dividing a goo electrode (not shown) and a cathode electrode into an outer peripheral region and an inner peripheral region using a suitable metal, and the lower surface of the reinforcing plate 1a is a cathode surface of the semiconductor element 1. It is said to be a face. On the cathode surface side of the semiconductor element 1, a cathode conductor 2 made of a conductive material and having a generally circular disk shape is pressed so as to be in electrical contact only with the above cathode electrode. Further, on the anode surface side of the semiconductor element 1, there is a cathode conductor 3 made of a conductive material and having a generally disk shape as described above. lii is pressed into electrical contact with the electrode. A cathode 7 flange 4 is provided on the outer periphery of the cathode conductor 2, and an anode 7 flange 5 is also provided on the outer periphery of the anode conductor 3. By coupling, the cathode conductor 2 and the positive conductor 3 are integrally connected while maintaining an electrically insulated state.

A gate ring 8 made of a conductive material is fitted onto the outer periphery of the lower half of the cathode conductor 2 with an insulating member 7 interposed therebetween. This gate ring 8 is pressed against the cathode surface of the semiconductor element 1 by a spring 11 supported by flat washers 9 and 10 provided on the outer periphery of the cathode conductor 2, so that the gate ring 8 is pressed against the cathode surface of the semiconductor element 1. A ring 8 is configured to maintain electrical contact. An insulating member 12 is inserted between the flat washer 10 and the gate ring 8, and this insulating member 12 and the above-mentioned insulating member 7 provide electrical insulation between the gate ring 8 and the cathode conductor 2. has been done.

Further, the gate ring 8 is electrically connected to an external gate terminal 14 via a gate lead wire 13.
4 is configured to be transmitted to the gate electrode of the semiconductor element 1 through the gate lead wire 13° and the gate ring 8. Furthermore, the cathode conductor 2
A guide ring 15 made of an insulating material is fitted and fixed on the outer periphery of the semiconductor element 1, and the guide ring 15 is also fitted onto the semiconductor element 1 at the same time, thereby positioning the semiconductor element 1. ing.

A conventional semiconductor device is constructed as described above, with a cathode conductor 2 on the cathode surface of the semiconductor element 1 and an anode conductor 3 on the cathode surface of the semiconductor element 1.
is pressed against the cathode surface of the semiconductor element 1 with a predetermined pressure to maintain electrical contact with the semiconductor element 1, and with an appropriate voltage applied between the cathode conductor 2 and anode conductor 3,
From the gate terminal 14 to the gate lead wire 13. By flowing an ftII control current as a control signal to the gate electrode of the semiconductor element 1 via the gate ring 8, the control w is performed.
The current flowing between the cathode conductor 2 and the anode conductor 3 is controlled according to the J current. For this operation to occur, the gate ring 8 must be in proper contact with the gate electrode of the semiconductor element 1.

For example, if the gate ring 8 is misaligned and comes into contact with the cathode electrode of the semiconductor element 1, the control flow 11f applied from the gate terminal 14 is not transmitted from the gate ring 8 into the semiconductor element 1, The shade of 1! The electric power is transmitted to the cathode conductor 2 through the fi electric power, causing a short circuit between the gate electrode and the cathode electrode (hereinafter referred to as a GK short), and the semiconductor device becomes uncontrollable. In this semiconductor device, the position H1 of the semiconductor element 1 relative to the cathode conductor 2 is fixed by the guide link 15, while the gate ring 8 is fitted around the outer periphery of the cathode conductor 2 via the insulating member 7. Gara, gate ring 8
The correct positional relationship is fixed between the gate electrode and the gate electrode.

FIG. 3 is a longitudinal sectional view showing another conventional example (Japanese Patent Application Laid-Open No. 101072/1983) which has the same basic structure as the above-described semiconductor device. This semiconductor device differs from the above-described semiconductor device only in that the contact between the gate ring 8 and the gate electrode is made in a region between the center and the outer peripheral region of the cathode surface of the semiconductor element 1, and other configurations and Since the operation is the same, the explanation thereof will be omitted.

[Problem to be solved by the invention]

However, in the conventional semiconductor device described above, since the semiconductor element 1 and the gate ring 8 are aligned through the cathode conductor 2, the guide ring 15 is placed between the semiconductor element 1 and the gate ring 8. ．． Cathode conductor 2
．． Parts such as the insulating member 7 are interposed, and there is a risk that a considerable deviation will occur in the positional relationship between the semiconductor element 1 and the gate ring 8 due to the manufacturing tolerance of each of these parts, and in the worst case, there is a risk of causing a GK short circuit. There is. Although it is possible to avoid such a worst case scenario by reducing the manufacturing tolerances of each component, there is a problem in that this increases costs.

The present invention was made to solve these problems, and aims to provide a semiconductor device that can reliably prevent GK short-circuiting without increasing cost.

[Means to solve the problem]

The semiconductor device according to the present invention has one side as a cathode surface having a gate electrode in its outer peripheral region and a cathode electrode in its inner peripheral region,
A semiconductor element whose other side is an anode surface having an anode electrode, and a cathode F on the cathode surface side of this semiconductor element.
A cathode conductor that is pressed so as to contact only the i-electrode, and an anode conductor that is integrated with this cathode conductor via an insulator and is pressed against the anode side of the semiconductor element so as to make contact with the anode electrode. Body and l! ! A gate ring is fitted onto the outside of the semiconductor element in an electrically insulated state as a conductive material, and is pressed against the cathode side of the semiconductor element so as to contact only the gate electrode thereof. This semiconductor device includes a control signal transmission member that transmits a control signal to an electrode, and a card link that is fitted onto the outside of a semiconductor element to position the semiconductor element, in which a guide ring is fitted and fixed onto a gate ring.

[Effect]

In this invention, since the guide ring for positioning the semiconductor element is directly fixed to the gate ring, the only part interposed between the semiconductor element and the gate ring is the guide link, and the number of parts interposed between the semiconductor element and the gate ring is reduced. Misalignment in the positional relationship between the gate ring and the semiconductor element due to manufacturing tolerances can be kept small.

〔Example〕

FIG. 1 is a longitudinal cross-sectional view showing one embodiment of a semiconductor device according to the present invention, and numerals 1 to 14 are completely the same as the conventional device described above. In this semiconductor device, the guide ring 15 is directly fixed to the outer periphery of the gate ring 8. The guide ring 15 is fitted onto the semiconductor element 1 at the same time, and the structure for positioning the semiconductor element 1 and the structure of other parts are also the same as in the conventional device.

In this semiconductor device, since the guide ring 15 for positioning the semiconductor element 1 is directly fixed to the gate ring 8, parts intervening between the semiconductor element 1 and the gate ring 8 are used to fix the positional relationship between the semiconductor element 1 and the gate ring 8. There is only the guide ring 15, and therefore, the deviation in the positional relationship between the semiconductor element 1 and the gate ring 8 due to manufacturing tolerances of the parts can be suppressed to that extent.

For example, if the outer diameter tolerance of the semiconductor element 1 is 0.1, the inner diameter tolerance of the gate ring 8 is 0.1, and the inner diameter tolerance of the guide ring 15 is 0.1, then the positional relationship between the semiconductor element 1 and the gate ring 8 is The deviation is 0.1+ 0.1+
0.1=0.3. On the other hand, in the conventional device described above, the outer diameter tolerance of the semiconductor element 1 is set to 0.1
, the inner diameter tolerance of the guide link 15 is 0.1, and the cathode conductor 2
The outer diameter tolerance of the insulating member 7 is 0.1, and the thickness tolerance of the insulating member 7 is 0.1. Assuming that the inner diameter tolerance of gate ring 8 is 0.1, the positional deviation between semiconductor element 1 and gate ring 8 is 0.1+ 0.1+ 0.1+, 0.1+ 0.1
= 0.5, and it can be seen that the positional deviation is smaller in the semiconductor device of this embodiment than in the case of the conventional device. That is, in the semiconductor device of this embodiment, even if each component is processed with the same processing accuracy as in the conventional device, alignment can be performed with higher precision than in the conventional device.

Incidentally, since the operation of the semiconductor device of this embodiment is similar to that of the conventional device, the explanation thereof will be omitted here.

〔Effect of the invention〕

As described above, according to the present invention, since the guide ring for positioning the semiconductor element is directly fixed to the gate ring, the guide ring is the only component interposed between the semiconductor element and the gate ring, and the intermediate component is As a result, the deviation that occurs in the positional relationship between the gate ring and the semiconductor element due to the manufacturing tolerance of the parts is reduced, and it is possible to manufacture semiconductor devices at low cost with high alignment accuracy and reliably preventing GK shorts. .

[Brief explanation of the drawing]

FIG. 1 is a vertical cross-sectional view showing an embodiment of a semiconductor device according to the present invention, FIG. 2 is a vertical cross-sectional view showing an example of a conventional semiconductor device, and FIG. 3 is a vertical cross-sectional view showing another example of a conventional semiconductor device. It is a front view. In the figure, 1 is a semiconductor element, 2 is a cathode conductor,
3 is an anode conductor, 6 is an insulating cylinder, 7 is an insulating member, 8 is a gate ring, 13 is a gate lead wire, and 15 is a guide ring. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa 1st figure 1 ° hand 11 lower element〉to 2: 絡纂 睏3: 輌shin denketsu 7: inter-row 8: kettoli〉ge 13: ke“-toread machine 15: f Idrishige

Claims (1)

[Claims] (1) A semiconductor element in which one side is a cathode surface having a gate electrode in its outer peripheral area and a cathode electrode in its inner peripheral area, and the other side is an anode surface having an anode electrode, and the cathode surface of this semiconductor element. A cathode conductor is pressed to the side so as to contact only the cathode electrode, and a cathode conductor is integrated with the cathode conductor via an insulator, and is pressed to the anode side of the semiconductor element so as to contact the anode electrode. a gate ring which is fitted onto the cathode conductor in an electrically insulated state and which is pressed against the cathode surface side of the semiconductor element so as to contact only the gate electrode thereof; A semiconductor device comprising: a control signal transmission member that transmits a control signal to a gate electrode of the semiconductor element via a gate ring; and a card link that is fitted onto the semiconductor element to position the semiconductor element; A semiconductor device, characterized in that the semiconductor device is externally fitted and fixed to the gate ring.