JPH01291483A - Uniaxial mode semiconductor laser - Google Patents
Uniaxial mode semiconductor laserInfo
- Publication number
- JPH01291483A JPH01291483A JP63123099A JP12309988A JPH01291483A JP H01291483 A JPH01291483 A JP H01291483A JP 63123099 A JP63123099 A JP 63123099A JP 12309988 A JP12309988 A JP 12309988A JP H01291483 A JPH01291483 A JP H01291483A
- Authority
- JP
- Japan
- Prior art keywords
- mode
- region
- layer
- oscillation
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 230000010355 oscillation Effects 0.000 abstract description 20
- 239000011248 coating agent Substances 0.000 abstract description 12
- 238000000576 coating method Methods 0.000 abstract description 12
- 238000005253 cladding Methods 0.000 abstract description 6
- 230000010363 phase shift Effects 0.000 abstract description 6
- 230000002238 attenuated effect Effects 0.000 abstract description 4
- 230000001902 propagating effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 11
- 230000005684 electric field Effects 0.000 description 6
- 230000001629 suppression Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 101150110330 CRAT gene Proteins 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光通信システムに用いる単一軸モード半導体
レーザに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a single-axis mode semiconductor laser for use in optical communication systems.
（従来の技術）
素子内部に回折格子が埋め込まれ、その回折格子の反射
を利用してレーザ発振する分布帰還型半導体レーザ（Ｄ
ＦＢ−ＬＤ）は、光ファイバの波長分散の影響を殆んど
受けず、長距離大容量の光通信用光源として有望視され
ている。(Prior art) A distributed feedback semiconductor laser (D
FB-LD) is almost unaffected by the wavelength dispersion of optical fibers and is seen as a promising light source for long-distance, large-capacity optical communications.
このようなりＦＢ−ＬＤの例としては、山口らによる１
、５５μｍ帯λ／８シフト型ＤＦＢ−ＤＣ−ＰＢＨＬＤ
（昭和６２年度電子情報通信学会総合全国大会８６１）
の報告がある。An example of such an FB-LD is the one by Yamaguchi et al.
, 55 μm band λ/8 shift type DFB-DC-PBHLD
(IEICE General Conference 861, 1986)
There are reports of.
この報告例では、ＤＦＢ−ＬＤの回折格子の一部分に位
相シフト量がλ／８である位相シフト領域を設けること
により、回折格子で決定される発振モードの選択性を高
めるとともに、ＤＦＢ−ＬＤの出射側の両端面に無反射
コーティングを施し、ファプリ・ペローモードの抑制を
行って安定に単一軸モード発振するＤＦＢ−ＬＤを実現
している。In this example report, by providing a phase shift region with a phase shift amount of λ/8 in a part of the diffraction grating of the DFB-LD, the selectivity of the oscillation mode determined by the diffraction grating is increased, and the Anti-reflection coating is applied to both end faces on the emission side to suppress the Fabry-Perot mode and realize a DFB-LD that stably oscillates in a single axis mode.
（発明が解決しようとする課題）
しかしながら、前述の様な構成のＤＦＢ−ＬＤでは両端
面の無反射コーティングにより、基本モードとは異なる
新たな不要モードの発生が起こりやすくなる。この新た
な不要モードは、ＤＦＢ−ＬＤ本来の基本モードである
ＴＥモードと偏波方向が９０°異なる１Ｍモードと呼ば
れるものである。(Problem to be Solved by the Invention) However, in the DFB-LD configured as described above, the anti-reflection coating on both end faces tends to cause generation of a new unnecessary mode different from the fundamental mode. This new unnecessary mode is called 1M mode, which has a polarization direction different by 90 degrees from the TE mode, which is the original fundamental mode of DFB-LD.
ここでＴＥモードは、その主電界成分の方向が活性層に
平行に偏波したモードであり、１Ｍモードはその主電界
成分の方向が、活性層に垂直に偏波したモードである。Here, the TE mode is a mode in which the direction of its main electric field component is polarized parallel to the active layer, and the 1M mode is a mode in which the direction of its main electric field component is polarized perpendicular to the active layer.
へき開面を反射鏡とした半導体レーザでは、１Ｍモード
の端面反射率がＴＥモードより小さいから、１Ｍモード
は発振しなかったが、前述のＤＦＢ−ＬＤでは無反射コ
ーティングにより、端面反射率が小さくなり、１Ｍモー
ドとＴＥモードの反射率が等しくなってくるから１Ｍモ
ードの発振が生じやすくなる。ＤＦＢ−ＬＤが１Ｍモー
ドで発振すると、２軸モ一ド発撮となるから、単一モー
ドファイバを用いた長距離光フアイバ伝送では、波長分
散、モード分配雑音が生じ、符号誤りの無い伝送が不可
能となることさえある。In a semiconductor laser using the cleavage plane as a reflector, the end face reflectance of the 1M mode is smaller than that of the TE mode, so the 1M mode does not oscillate.However, in the DFB-LD described above, the end face reflectance is reduced due to the anti-reflection coating. , since the reflectances of the 1M mode and the TE mode become equal, oscillation of the 1M mode becomes more likely to occur. When the DFB-LD oscillates in the 1M mode, it becomes a biaxial mode oscillation, so in long-distance optical fiber transmission using a single mode fiber, chromatic dispersion and mode distribution noise occur, making transmission without code errors difficult. It may even be impossible.
上述のλ／８シフト型ＤＦＢ−ＤＣ−ＰＢＨＬＤではフ
ァプリ・ペローモードの抑制を目的に両端面に無反射コ
ーティングを施こしているから、ＴＭモモ−発振が起こ
りやすくなってきている。In the above-mentioned λ/8 shift type DFB-DC-PBHLD, anti-reflection coating is applied to both end faces for the purpose of suppressing the Fabry-Perot mode, so TM momo oscillation is more likely to occur.
すなわち、従来のＤＦＢ−ＬＤでは安定な単一軸モード
発掘全実現するために１フアプリ・ペローモードの抑制
を目的に両端面の無反射コーティングを施すと、別の不
要モードである１Ｍモードの発振が起りやすくなると云
う欠点があった。In other words, in the conventional DFB-LD, when anti-reflection coating is applied to both end faces with the aim of suppressing the 1Fuply-Perot mode in order to fully discover and realize a stable single-axis mode, the oscillation of the 1M mode, which is another unnecessary mode, is suppressed. The drawback was that it was more likely to occur.
そこで、本発明の目的は、ファプリ・ペローモード抑制
のために無反射コーティングを行なっても、１Ｍモード
の発振が起こらず、安定な単一軸モード発振が可能な単
一軸モード半導体レーザを提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a single-axis mode semiconductor laser that does not cause 1M mode oscillation even when an anti-reflection coating is applied to suppress the Fabry-Perot mode, and is capable of stable single-axis mode oscillation. It is in.
（課題を解決するだめの手段）
本発明は、活性層の近傍に回折格子を設けてなり、この
回折格子による反射を利用して単一軸モードで発振する
半導体レーザであって、前記活性層を含んだ光導波路の
近傍の一部分に、前記半導体レーザの不要モード成分の
減衰を行う金属膜を形成したことを特徴としている。(Means for Solving the Problems) The present invention provides a semiconductor laser which includes a diffraction grating in the vicinity of an active layer and which oscillates in a single axis mode by utilizing reflection from the diffraction grating. The present invention is characterized in that a metal film is formed in a portion near the included optical waveguide to attenuate unnecessary mode components of the semiconductor laser.
（作用）
ＤＦＢ−Ｌｉ）に於いて、ファブリ・ペローモード及び
１Ｍモードの発振を抑制するには、両端面に無反射コー
ティングを施し、ファブリ・ベローモードを抑制すると
ともに、ＤＦＢ−ＬＤ内に、１Ｍモードを減衰させ、Ｔ
Ｅモードには減衰を殆んど与えないモードフィルタを取
り付ければよい。(Function) In order to suppress the Fabry-Perot mode and 1M mode oscillation in the DFB-Li), anti-reflection coating is applied to both end faces to suppress the Fabry-Bello mode, and in the DFB-LD, Attenuate the 1M mode and T
A mode filter that provides almost no attenuation may be attached to the E mode.
この場合、モードフィルタによ、９．１Ｍモードは減衰
し、ＴＥモードに比べ１Ｍモードの半導体レーザ内の利
得が低下するから、１Ｍモードの発振が起こらなくなる
。In this case, the 9.1M mode is attenuated by the mode filter, and the gain in the semiconductor laser for the 1M mode is lower than that for the TE mode, so that oscillation in the 1M mode no longer occurs.
一方、上述のモードフィルタは、ＤＦＢ−ＬＤの活性層
の近くに金叫膜を形成する事によシ実現できる。例えば
、活性層の上部に薄い８ｉ０２膜を介して金属膜を形成
すると、電界成分が金属膜に対して垂直方向となる１Ｍ
モードは減衰を受ける。On the other hand, the above mode filter can be realized by forming a gold film near the active layer of the DFB-LD. For example, if a metal film is formed on top of the active layer through a thin 8i02 film, the electric field component will be perpendicular to the metal film.
The modes undergo attenuation.
一方、電界成分が金属膜に平行なＴＥモードは減衰を受
けない。On the other hand, the TE mode in which the electric field component is parallel to the metal film is not attenuated.
この様なモードフィルタ領域を半導体レーザ内の一部に
設ける事により、ＴＭモモ−発振を抑制した安定な単一
軸モード半導体レーザを実現することができる。By providing such a mode filter region in a part of the semiconductor laser, it is possible to realize a stable single-axis mode semiconductor laser in which TM momo oscillation is suppressed.
（実施例） 次に、本発明について図面を参照して説明する。(Example) Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例である波長１．３μｍの
ＤＦＢ−ＬＤの断面図である。FIG. 1 is a cross-sectional view of a DFB-LD with a wavelength of 1.3 μm, which is a first embodiment of the present invention.
第１図のＤＦＢ−ＬＤはλ／８シフトの位相シフト領域
１０を施した１、３μｍ帯λ／８シフト型ＤＦＢ−ＬＤ
である。このＤＦＢ−ＬＤはｎ型のＩｎＰ基板１３上に
位相シフト領域１０を含んだ１次の回折格子１２を形成
した後、厚さ０．１μｍのＩｎＧａＡｓＰのガイド層１
４．厚さ０．１μｍ波長組成１．３／ｊｍのＩｎＧａＡ
ｓＰ活性層１．厚さ３μｍのｐ型ＩｎＰのクラッド層２
、厚さ０．５／ｊｍのｐ＋型ＩｎＧａＡｓＰのキャップ
層３を順次に成長させたものである。The DFB-LD in Fig. 1 is a 1.3 μm band λ/8 shift type DFB-LD with a λ/8 shift phase shift region 10.
It is. In this DFB-LD, a first-order diffraction grating 12 including a phase shift region 10 is formed on an n-type InP substrate 13, and then a guide layer 1 of InGaAsP with a thickness of 0.1 μm is formed.
4. InGaA with a thickness of 0.1 μm and a wavelength composition of 1.3/jm
sP active layer 1. P-type InP cladding layer 2 with a thickness of 3 μm
, a cap layer 3 of p+ type InGaAsP having a thickness of 0.5/jm is grown in sequence.
一方、１Ｍモードの抑制を行うモードフィルタ領域９は
、キャップ層３及びクラッド層２の一部をエツチングし
て、クラッド層２を５００ＯＡ残した上部に厚さ３００
０Ａの８ｉ０２膜４を形成した上に、第１の電極５を取
りつけた構造である。まだ第１図１））ＤＰＢ−ＬＤに
於いて全長を３００μｍ。On the other hand, the mode filter region 9 for suppressing the 1M mode is formed by etching a part of the cap layer 3 and the cladding layer 2, leaving the cladding layer 2 with a thickness of 300 OA on the upper part.
It has a structure in which a 8i02 film 4 of 0A is formed and a first electrode 5 is attached thereto. The total length in the DPB-LD is still 300 μm (see Figure 1).
モードフィルタ領域９の長さを１００μｍとした後、両
端面に反射率１チ以上の無反射コート膜８を設けた。After setting the length of the mode filter region 9 to 100 μm, a non-reflection coating film 8 having a reflectance of 1 inch or more was provided on both end faces.
以上の構成のＤＦＢ−ＬＤに於いて、モードフィルタ領
域９では、電極５が活性層１に極めて近いから、活性層
１とガイド層１４で形成される光導波路７内を伝搬する
モードのうち、電界成分が電極５と垂直な１Ｍモードは
減衰を受ける。一方、ＴＥモードは電界成分が電ｒｊ５
と平行であるから、モードフィルタ領域９では殆んど減
衰せずに伝搬する。そこで、光導波路７では、ＴＥモー
ドの利得が十分に高く、光出力１１はＴＥモードによる
安定な単一軸モード発振となる。In the DFB-LD having the above configuration, in the mode filter region 9, since the electrode 5 is extremely close to the active layer 1, among the modes propagating in the optical waveguide 7 formed by the active layer 1 and the guide layer 14, The 1M mode in which the electric field component is perpendicular to the electrode 5 is attenuated. On the other hand, in TE mode, the electric field component is electric rj5
Since it is parallel to , it propagates in the mode filter region 9 with almost no attenuation. Therefore, in the optical waveguide 7, the gain in the TE mode is sufficiently high, and the optical output 11 becomes stable single-axis mode oscillation in the TE mode.
実際にこのＤＦＢ−ＬＤのＴＥモードと１Ｍモードの発
振強度比（ＴＥモードに対する１Ｍモードの抑圧比）を
測定してみたところ、無変調時でＴＭモード抑圧比４５
ｄＢ、伝送速度Ｓ：４Ｇｂ／ｓの変調時で４０ｄＢと良
好な１Ｍモードの抑制を確認できた。When we actually measured the oscillation intensity ratio between TE mode and 1M mode (suppression ratio of 1M mode to TE mode) of this DFB-LD, we found that the TM mode suppression ratio was 45 when no modulation was performed.
dB, transmission speed S: 40 dB at modulation of 4 Gb/s, good suppression of 1M mode was confirmed.
またこのＤＦＢ−ＬＤの単一軸モード発振歩留りを調べ
た結果、半導体レーザのヒートシンク等への融着の際に
活性層にストレスが生じても、１Ｍモードが抑圧される
ため、モードフィルタ領域９を有したＤＦＢ−ＬＤでは
、従来のモードフィルタ領域９の無いＤＩ；’Ｂ−ＬＤ
に比べ歩留りが１．５倍向上した。Furthermore, as a result of investigating the single-axis mode oscillation yield of this DFB-LD, even if stress is generated in the active layer when the semiconductor laser is fused to a heat sink, etc., the 1M mode is suppressed. In the DFB-LD with the conventional mode filter region 9,
The yield was improved by 1.5 times.
さらに本実施例のＤＦＢ−ＬＤを用いて、伝送速度２．
４Ｇｂ／ｓで７０ｋｍの単一モードファイバ伝送を行な
ったところ、１Ｍモードの発振による波形劣化及びモー
ド分配雑音が生じる事なく、符号誤り率１Ｏ−Ｉｔ以下
の安定な伝送を実現することができた。Furthermore, using the DFB-LD of this embodiment, the transmission rate is 2.
When performing single mode fiber transmission over 70km at 4Gb/s, stable transmission with a bit error rate of 1O-It or less was achieved without waveform deterioration or mode distribution noise due to 1M mode oscillation. .
第２図は、本発明の第２の実施例であるＤＦＢ−ＬＤの
断面図である。構造的には、第１の実施例のＤＦＢ−Ｌ
Ｄと類似しているが、本実施例では、半導体レーザの光
強度分布が最大となる半導体レーザの中央部にモードフ
ィルタ領域９を設け、第１の実施例より１Ｍモードの抑
圧を大きくした構造としている。また、モードフィルタ
領域９では、クラッド層２の厚みを５００ＯＡまでエツ
チングした後に電極５を形成した。FIG. 2 is a sectional view of a DFB-LD which is a second embodiment of the present invention. Structurally, the DFB-L of the first embodiment
Although similar to D, this embodiment has a structure in which a mode filter region 9 is provided in the center of the semiconductor laser where the light intensity distribution of the semiconductor laser is maximum, and the 1M mode is suppressed more than in the first embodiment. It is said that Further, in the mode filter region 9, the electrode 5 was formed after etching the cladding layer 2 to a thickness of 500 OA.
本実施例のＤＦＢ−ＬＤは波長１．３μｍで単一軸モー
ド発振するように各層の組成１回折格子１２の周期を設
定し、ＤＦＢ−ＬＤのモードフィルタ領域及びＤＦＢ−
ＬＤの全長をそれぞれ１００μｍ。In the DFB-LD of this example, the period of the composition 1 diffraction grating 12 of each layer is set so as to oscillate in a single axis mode at a wavelength of 1.3 μm, and the mode filter area of the DFB-LD and the DFB-
The total length of each LD is 100 μm.
４００μｍとした。It was set to 400 μm.
以上の構成のＤＦＢ−ＬＤを動作させ、光出力１１のＴ
Ｅモードに対するＴＭモード抑圧比を測定したところ、
無変調時でＴＭモード抑圧比４８ｄＢ、伝送速度］ＪＧ
ｂ／ｓの変調時でもＴＭモード抑圧比４５ｄＢと良好な
単一軸モード発振を確認した。The DFB-LD with the above configuration is operated, and the optical output is 11 T.
When we measured the TM mode suppression ratio for E mode, we found that
TM mode suppression ratio 48dB without modulation, transmission speed] JG
Even during b/s modulation, we confirmed a TM mode suppression ratio of 45 dB and good single-axis mode oscillation.
さらに、伝送速度１．２Ｇｂ／ｓで８ｋｍの単一モー−
ドファイバ伝送実験を行なった際にも、ＴＭモード発振
による波形劣化及びモード分配雑音の影響が生じること
なく、符号誤り率ＩＱ−１１以下の良好な伝送を実現で
きた。In addition, a single mode transmission speed of 8 km at a transmission rate of 1.2 Gb/s is possible.
Even when conducting fiber-optic transmission experiments, good transmission with a bit error rate of IQ-11 or less was achieved without waveform deterioration due to TM mode oscillation and without the effects of mode distribution noise.
尚、本発明には、以上の実施例で示した他にも様々な変
形例が考えられる。It should be noted that various modifications of the present invention are possible in addition to those shown in the above embodiments.
例えば、各実施例では、モードフィルタ領域の構造を金
属膜を電極とし、光導波路の上に形成したが、金属膜は
光導波路の下または上に一部分だけ埋めこんだ構成とし
てもよい。For example, in each embodiment, the structure of the mode filter region is formed on the optical waveguide using a metal film as an electrode, but the metal film may be partially buried below or above the optical waveguide.
また、本実施例の単一軸モード半導体レーザは波長Ｌ３
μｍの場合について説明したが、他の波長例えば波長１
．５５μｍ帯に適用しても同様の効果が得られる。Furthermore, the single-axis mode semiconductor laser of this example has a wavelength of L3.
Although we have explained the case of μm, other wavelengths such as wavelength 1
．． Similar effects can be obtained even when applied to the 55 μm band.
さらに、本発明の実施例では、回折格子を活性層の下の
ガイド層とＩｎＰ基板の境界に形成したが、回折格子を
形成する位置はこの場所に限らず、例えば、活性層の上
にガイド層を形成し、ガイド層とクラット層の境界に回
折格子を形成してもよい。Furthermore, in the embodiments of the present invention, the diffraction grating was formed at the boundary between the guide layer below the active layer and the InP substrate, but the position where the diffraction grating is formed is not limited to this location. A diffraction grating may be formed at the boundary between the guide layer and the crat layer.
さらに半導体レーザ内におけるモードフィルタ領域の数
は１つに限らず複数用いてもよい。Further, the number of mode filter regions in the semiconductor laser is not limited to one, and a plurality of mode filter regions may be used.
（発明の効果）
以上に説明したように、本発明によれば、無反射コーテ
ィングにより半導体レーザの７アプリ・ペローモードを
抑圧した状態でさらに１Ｍモードの発振を抑制し、回折
格子だけで決るＴＥモードのみで安定な発振を行う単一
軸モード半導体レーザが実現できる。(Effects of the Invention) As explained above, according to the present invention, the oscillation of the 1M mode is further suppressed while the 7-appli-Perot mode of the semiconductor laser is suppressed by the anti-reflection coating, and the TE determined only by the diffraction grating is A single-axis mode semiconductor laser that oscillates stably only in one mode can be realized.
第１図は本発明の第１の実施例を示す断面図、第２図は
本発明の第２の実施例を示す断面図である０
１・・・・・・活性層、２・・・・・・クラッド層、３
・・・・・・キャップ層、４・・・・・・ＳｉＯ□膜、
５，６・・・・・・電極、７・・・・・・光導波路、８
・・・・・・無反射コート膜、９・・・・・・モードフ
ィルタ領域、１０・・・・・・位相シフト領域、１１・
・・・・・光出力、１２・・・・・・回折格子、１３・
・・・−・ＩｎＰ基板、１４・・・・・・ガイド層。
代理人 弁理士 本 庄 伸 介
ノ／
１−ｍ＝−５舌往４ ９−−−モート
７４ルタ布呉ν！２− フラ、１′層
１０− イ１相シ２ト乍眞仄３−−−七ヤ゛ツブ４
Ｎ−ｍ−光ｆ４２１１４−５
ｉＯ２様 １２− ω坊持手第１図FIG. 1 is a sectional view showing a first embodiment of the present invention, and FIG. 2 is a sectional view showing a second embodiment of the present invention. ...Clad layer, 3
...Cap layer, 4...SiO□ film,
5, 6... Electrode, 7... Optical waveguide, 8
..... Anti-reflection coating film, 9 ..... Mode filter region, 10 ..... Phase shift region, 11.
.....light output, 12.....diffraction grating, 13.
. . . InP substrate, 14 . . . Guide layer. Agent Patent Attorney Shinsuke Honjo / 1-m=-5tongue 4 9--Mort 74 Ruta Fugo ν! 2- Fura, 1' layer
10- A 1 phase 2 to 3 - 7 phase 4
N-m-light f42114-5
Mr. iO2 12- ω-handle diagram 1
Claims (1)
よる反射を利用して単一軸モードで発振する半導体レー
ザに於いて、前記活性層を含んだ光導波路の近傍の一部
分に、前記半導体レーザの不要モード成分の減衰を行う
金属膜を形成したことを特徴とする単一軸モード半導体
レーザ。In a semiconductor laser that includes a diffraction grating in the vicinity of an active layer and oscillates in a single-axis mode using reflection from the diffraction grating, the semiconductor laser is provided in a part of the optical waveguide that includes the active layer. A single-axis mode semiconductor laser characterized by forming a metal film that attenuates unnecessary mode components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63123099A JPH01291483A (en) | 1988-05-19 | 1988-05-19 | Uniaxial mode semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63123099A JPH01291483A (en) | 1988-05-19 | 1988-05-19 | Uniaxial mode semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01291483A true JPH01291483A (en) | 1989-11-24 |
Family
ID=14852176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63123099A Pending JPH01291483A (en) | 1988-05-19 | 1988-05-19 | Uniaxial mode semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01291483A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5790581A (en) * | 1994-02-18 | 1998-08-04 | Canon Kabushiki Kaisha | Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser |
-
1988
- 1988-05-19 JP JP63123099A patent/JPH01291483A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5790581A (en) * | 1994-02-18 | 1998-08-04 | Canon Kabushiki Kaisha | Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser |
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