JPH01291279A - Electrophotographic device constituted by using amorphous silicon photosensitive body - Google Patents
Electrophotographic device constituted by using amorphous silicon photosensitive bodyInfo
- Publication number
- JPH01291279A JPH01291279A JP12151388A JP12151388A JPH01291279A JP H01291279 A JPH01291279 A JP H01291279A JP 12151388 A JP12151388 A JP 12151388A JP 12151388 A JP12151388 A JP 12151388A JP H01291279 A JPH01291279 A JP H01291279A
- Authority
- JP
- Japan
- Prior art keywords
- light
- main
- photoreceptor
- photosensitive body
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims description 14
- 108091008695 photoreceptors Proteins 0.000 claims description 36
- 230000003068 static effect Effects 0.000 claims description 14
- 238000003379 elimination reaction Methods 0.000 claims description 9
- 230000008030 elimination Effects 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000010422 painting Methods 0.000 abstract 1
- 239000000969 carrier Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 230000003472 neutralizing effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Landscapes
- Discharging, Photosensitive Material Shape In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、アモルファスシリコン感光体を用いた電子写
真装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an electrophotographic apparatus using an amorphous silicon photoreceptor.
[従来の技術]
アモルファスシリコン感光体は表面硬度が高く、半導体
レーザー(770nm〜aoonm)などの長波長光に
高い感度を示し、しかも繰り返し使用による劣化も殆と
認められないなど、特に、高速複写機やレーザーヒーム
プリンタなどの電子写真用感光体として賞月されている
。[Prior Art] Amorphous silicon photoreceptors have high surface hardness, exhibit high sensitivity to long wavelength light such as semiconductor lasers (770 nm to AOONM), and show almost no deterioration due to repeated use, making them especially suitable for high-speed copying. It is prized as a photoreceptor for electrophotography in machines and laser beam printers.
このようなアモルファスシリコン感光体を用いた従来の
電子写真装置の一例を第3図に示す。第3図において、
1はアモルファスシリコン感光体を示し、これは、X線
で示す方向に回転する紙面に垂直方向の回転円筒状の感
光ドラムとして構成されている。感光体1の周辺には該
感光体に近接して感光体表面感光層を一様に帯電させる
主f電器2、静電潜像を形成するための画像情報付与手
段3、これを顕像化するための現像器4、該顕像を転写
材に転穆させるための転写帯電器5、転写材を感光体か
ら分離する分離手段6、クリーニング装置7、主除電光
源8か平行に配設しである。クリーニング装置7には、
ウレタンゴムなと適宜の弾性材料から成るクリーニング
ブレード7−1が設けられ、その一つの端縁がカウンタ
一方向ないしトレーリング方向に圧接していて、転写部
位において転写に寄与せず該感光体表面に残る残留トナ
ーが該ブレード位置に到来したときに、これを該表面か
らかきおとすようになっている。FIG. 3 shows an example of a conventional electrophotographic apparatus using such an amorphous silicon photoreceptor. In Figure 3,
Reference numeral 1 denotes an amorphous silicon photoreceptor, which is configured as a rotating cylindrical photoreceptor drum that rotates in the direction shown by the X-rays in a direction perpendicular to the plane of the paper. Around the photoreceptor 1, there are a main charger 2 that is close to the photoreceptor and uniformly charges the photosensitive layer on the surface of the photoreceptor, an image information imparting means 3 for forming an electrostatic latent image, and a means for visualizing this image. A developing device 4 for transferring the developed image onto a transfer material, a transfer charging device 5 for transferring the developed image onto a transfer material, a separating means 6 for separating the transfer material from the photoreceptor, a cleaning device 7, and a main static eliminating light source 8 are arranged in parallel. It is. The cleaning device 7 includes
A cleaning blade 7-1 made of a suitable elastic material such as urethane rubber is provided, and one edge of the cleaning blade 7-1 is in pressure contact with the counter in one direction or in the trailing direction, and does not contribute to the transfer at the transfer site and cleans the surface of the photoreceptor. Any residual toner remaining on the blade is scraped off the surface when it reaches the blade location.
[発明が解決しようとする課題]
上記のようなアモルファス感光体を用いた電子写真装置
においては、アモルファスシリコン感光体は、多くのタ
ングリングボンド(未結合手)を有しており、これが局
在準位となって光キャリアの一部を捕捉してその走行性
を低下させ、あるいは光生成キャリアの再結合確率を低
下させる。したがって画像形成プロセスにおいて、露光
によって生成されたキャリアの一部は、次工程の帯電時
に感光体に電界がかかると同時に局在準位から開放され
、露光部と非露光部で、感光体表面電位に差が生して、
これが最終的にゴーストと称される画像むらとなって表
われる。[Problems to be Solved by the Invention] In an electrophotographic device using an amorphous photoreceptor as described above, the amorphous silicon photoreceptor has many tangling bonds (dangling bonds), and these are localized. It becomes a level and captures some of the photocarriers, reducing their mobility or reducing the recombination probability of photogenerated carriers. Therefore, in the image forming process, some of the carriers generated by exposure are released from the localized level at the same time as an electric field is applied to the photoreceptor during the next charging step, and the surface potential of the photoreceptor is There is a difference in
This ultimately appears as image unevenness called ghost.
このようなゴーストを消去するために、主除電工程にお
いて均一露光を行なうことにより、感光体内部に潜在す
るキャリアを過多にし全面で均一になるようにして、非
メモリを消去することが一般的である。この光量を増や
したり、アモルファスシリコン感光体の分光感度ピーク
にちかずける(おおむね680nm〜700n”m)事
により、より効果的にゴーストを消去することが可能で
ある。しかし、前述のようにアモルファスシリコン感光
体は、光メモリを受けやすく、あまり主除電電光を強く
しすぎると、□感光体内部に潜在する過多となったキャ
リアが、再結合するまえに、主帯電工程に突入し、帯電
能率を著しく低下させるといった弊害がありた。即ち帯
電工程において、初期はキャリアの再結合過程であり、
次いで表面電位の上昇過程といったステップを踏むため
、帯電工程直前の感光体のキャリア量が、その後の表面
電位の高低、即ち、帯電能に大きく影響する。In order to erase such ghosts, it is common practice to perform uniform exposure in the main static elimination process to increase the amount of latent carrier inside the photoreceptor and make it uniform over the entire surface, thereby erasing non-memory. be. It is possible to eliminate ghosts more effectively by increasing the amount of light or by bringing it closer to the spectral sensitivity peak of the amorphous silicon photoreceptor (approximately 680 nm to 700 nm).However, as mentioned above, the amorphous silicon photoreceptor Silicon photoreceptors are susceptible to optical memory, and if the main charge removal light is made too strong, the excess carriers latent inside the photoreceptor will enter the main charging process before recombining, reducing charging efficiency. In other words, in the charging process, the initial phase is a recombination process of carriers.
Then, since a step of increasing the surface potential is taken, the amount of carriers on the photoreceptor immediately before the charging step greatly influences the level of the subsequent surface potential, that is, the charging ability.
したがって主除電光は、主帯電から一定時間前に照射さ
れ、光メモリを消去したのちに、該キャリアがおおむね
再結合したのちに帯電工程へ進むことが望ましい。しか
し、′高速化・小型化の進む複写機にあってはこの再結
合に要する時間を長く(すくなくとも100m5ec以
上)取ることは困難であり、帯電能すなわち暗部電位の
確保の制約を受けある程度のゴーストは、割り切らざる
をえない状況であった。Therefore, it is preferable that the main neutralizing light be applied a certain period of time before the main charging to erase the optical memory and proceed to the charging step after the carriers have been generally recombined. However, in copying machines that are becoming faster and more compact, it is difficult to take a long time for this recombination (at least 100m5ec or more), and due to constraints on the charging ability, that is, securing the dark potential, some ghosts may occur. The situation was such that we had no choice but to cut it off.
しかし、ゴースト消去メカニズムが、前述のような過多
に発生させたキャリアによってならすといったメカニズ
ムによることから、該主照射後主除電光源の反射光など
のインテンシテイの低い光により生成されるキャリアは
、前述ゴーストの消去には殆ど関与せずに、帯電能を低
下させる弊害だけを及ぼすばかりでなく、反射によって
感光層への入射位置がより主帯電器側に移るケースも多
くさらに帯電能゛を低下させる結果を及ぼす頻度の高い
事が本発明者らの研究により明らかになった。However, since the ghost elimination mechanism is based on a mechanism in which carriers are generated in excess as described above, the carriers generated by low intensity light such as the reflected light from the main static elimination light source after the main irradiation are It has almost no effect on erasing ghosts, and not only has the negative effect of reducing the charging ability, but also often causes the incident position on the photosensitive layer to move closer to the main charger due to reflection, further reducing the charging ability. The research conducted by the present inventors has revealed that this effect is frequently caused.
主除電光源としては、ゴースト消去と帯電能確保の点5
から波長・光量を厳密にコントロールできるLEDアレ
イを用いる事が多く、これはクリーナと帯電器との間に
配設される。しかるに、従来装置構成においては、装置
間においてゴーストレベルが同等であるにもかかわらず
帯電能に大きなバラツキを生ずる問題があり帯電能力の
制約から除電光を弱めゴーストを割り切らざるを得ない
ケースも生じた。As the main static neutralization light source, point 5 is to eliminate ghosts and ensure charging ability.
In many cases, an LED array is used, which can strictly control the wavelength and light intensity, and is placed between the cleaner and the charger. However, with the conventional device configuration, there is a problem in that even though the ghost level is the same between devices, there is a large variation in charging ability, and due to charging ability constraints, there are cases where it is necessary to weaken the static elimination light to eliminate the ghost. Ta.
本発明の目的は、ゴースト消去に不可欠な主除電光のゴ
ースト消去能力を最大限に引き出し、かつ帯電能低下を
最小限に抑えトータル性能に優れた電子写真装置を提供
することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an electrophotographic apparatus that maximizes the ghost erasing ability of the main static eliminating light that is essential for ghost erasing, minimizes deterioration in charging ability, and has excellent overall performance.
[課題を解決するための手段]
本発明は、上記の如くゴースト消去に不可欠な主除電光
のゴースト消去能力を最大限に引き出し、かつ帯電能低
下を最小限に抑えるために、主除電光を感光体表面に直
交入射せしめ且つ該感光体からの反射光を吸収する反射
防止部材を設けることによって、主帯電工程前に感光体
の残留電位を消去する主除電光の光量に比して、主除電
光照射位置と主f電器との間において感光体から反射す
る反射光量を5%以下としたことを特徴とするアモルフ
ァスシリコン感光体を用いた電子写真装置を提供する。[Means for Solving the Problems] As described above, the present invention provides a main static eliminator light in order to maximize the ghost erasing ability of the main static eliminator light, which is essential for ghost erasing, and to minimize deterioration in charging ability. By providing an anti-reflection member that is orthogonally incident on the surface of the photoreceptor and absorbs the reflected light from the photoreceptor, the amount of main neutralizing light that erases the residual potential of the photoreceptor before the main charging process is reduced. Provided is an electrophotographic apparatus using an amorphous silicon photoreceptor, characterized in that the amount of reflected light reflected from the photoreceptor between a static eliminating light irradiation position and a main electronic device is 5% or less.
[作 用コ
本発明によれば、主除電光を感光体に対し、直交入射さ
せ反射光を防止するとともに、反射防止部材を設けて反
射光の感光体への照射を抑えることにより、光メモリ除
去に関与せず帯電能のみを低下させてしまう現象を除去
する事ができる。[Function] According to the present invention, the main static elimination light is made orthogonally incident on the photoconductor to prevent reflected light, and an anti-reflection member is provided to suppress the irradiation of the reflected light to the photoconductor, thereby removing optical memory. It is possible to eliminate the phenomenon that only reduces the charging ability without being involved in the electrification.
[実 施 例コ
以下、図面を参照して本発明の実施例について説明する
。[Embodiments] Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の第1の実施例を示す。第1図において
、第3図について説明した従来のアモルファスシリコン
感光体を用いた電子写真複写装置の部分と同様の部分は
同し符号によって指示して、その説明は省略する。FIG. 1 shows a first embodiment of the invention. In FIG. 1, the same parts as those of the conventional electrophotographic copying apparatus using an amorphous silicon photoreceptor described with reference to FIG. 3 are designated by the same reference numerals, and the explanation thereof will be omitted.
第1図の実施例においては、主除電光源8に感光体表面
方向のみに光照射させるケーシング8−1を設け、同時
に感光体対向方向面に反射防止処理を施こし、例えは黒
色塗装を施こした板金8−2を用いることによって、感
光体にあたる主除電光の光量に比して、主除電光の照射
位置と主帯電器間における反射光光量を5%以下とする
。In the embodiment shown in FIG. 1, a casing 8-1 is provided in which the main static elimination light source 8 emits light only in the direction of the surface of the photoreceptor, and at the same time anti-reflection treatment is applied to the surface facing the photoreceptor, for example, the surface is coated with black paint. By using the scraped sheet metal 8-2, the amount of light reflected between the irradiation position of the main charger and the main charger is 5% or less compared to the amount of the main charger that hits the photoreceptor.
この第1図に示す実施例において、感光体としてアルミ
ニウムシリンダ上に27μのアモルファスシリコン感光
層を堆積したものを用い、感光体の直径を108mmと
し、プロセススピードを340mm/secとし、ケー
シング8−1および板金8−2の形状、塗装材質を種々
変化させることにより、直射光の照射位置A点と反射光
の照射位置B点の光量比B/Aを0.01. O,[1
5,0,1゜015変化させて、ゴーストと帯電能の関
係を調へた。その結果を第1表に示す。In the embodiment shown in FIG. 1, a 27 μm amorphous silicon photosensitive layer deposited on an aluminum cylinder was used as the photosensitive member, the diameter of the photosensitive member was 108 mm, the process speed was 340 mm/sec, and the casing 8-1 By variously changing the shape and coating material of the sheet metal 8-2, the light intensity ratio B/A between the direct light irradiation position A and the reflected light irradiation position B is set to 0.01. O, [1
The relationship between ghost and charging ability was examined by varying the angle of 5,0,1°015. The results are shown in Table 1.
第 1 表
上記の実験例において、反射率B / Aか0.05を
賎えたあたりからゴーストレベルは変化せずに帯電能の
み低下か認められた。従来例において帯電能を本実験例
と同等とするゴーストの悪化が認められた。Table 1 In the above experimental examples, when the reflectance B/A was reduced to 0.05, it was observed that the ghost level did not change and only the charging ability decreased. In the conventional example, deterioration of ghosting was observed, which made the charging ability equivalent to that of the present experimental example.
第2図は本発明の第2の実施例を示す。これは、第1図
に示すケーシング8−1および反射防止処理を施した板
金8−2の代りに、ケーシング部材として、カーボン分
散ポリエチレンなど遮光性可撓性材料より成るケーシン
グ8−3を設けた構成を示す。この実施例について第1
図に示す実施例について行なった実験と同様の条件で実
験を行なった。その実験結果を第2表に示す。FIG. 2 shows a second embodiment of the invention. In this case, a casing 8-3 made of a light-shielding flexible material such as carbon-dispersed polyethylene is provided as a casing member in place of the casing 8-1 and the sheet metal 8-2 treated with anti-reflection treatment shown in FIG. Show the configuration. Regarding this example, the first
The experiment was conducted under the same conditions as the experiment conducted for the example shown in the figure. The experimental results are shown in Table 2.
第2表
上記の実験においても第1表に示したのと同様の傾向が
見られた。Table 2 The same trends as shown in Table 1 were observed in the above experiments.
[発明の効果コ
本発明は、以上説明した構成作用を備えていて、アモル
ファスシリコン感光体の長寿命・高安定性を最大限に引
き出すべく、主除電光の反射によるゴースト除去に関与
しない電位低下の弊害となる光を除去することにより安
定した画質の電子写真装置を得ることが可能となった。[Effects of the Invention] The present invention has the above-described structural action, and in order to maximize the long life and high stability of the amorphous silicon photoconductor, the present invention eliminates a potential drop that does not involve ghost removal due to reflection of the main neutralizing light. By removing the harmful light, it has become possible to obtain an electrophotographic device with stable image quality.
第1図は本発明に係る電子写真装置の第1の実施例の要
部を示す概略側面図、第2図は本発明に係る電子写真装
置の第2の実施例の要部を示す概略側面図、第3図は従
来例を示す同様の図である。
1・・・アモルファスシリコン感光体
2・・・主帯電器
8・・・主除電光源FIG. 1 is a schematic side view showing a main part of a first embodiment of an electrophotographic apparatus according to the present invention, and FIG. 2 is a schematic side view showing a main part of a second embodiment of an electrophotographic apparatus according to the present invention. 3 are similar diagrams showing a conventional example. 1...Amorphous silicon photoreceptor 2...Main charger 8...Main static elimination light source
Claims (1)
て、主帯電工程前に感光体の残留電位を消去する主除電
光の光量に比して、主除電光照射位置と主帯電器との間
において感光体から反射する反射光の光量を5%以下と
したことを特徴とする電子写真装置。 2 前記の主除電工程における主除電光を感光体表面に
直交入射せしめ、且つ前記の感光体からの反射光を吸収
する反射防止部材を設けた請求項1記載の電子写真装置
。[Claims] 1. In an electrophotographic apparatus using amorphous silicon, the main charge removal light irradiation position and the main charger are different from each other in comparison to the light intensity of the main charge removal light that erases the residual potential of the photoreceptor before the main charging step. An electrophotographic apparatus characterized in that the amount of reflected light reflected from the photoreceptor between the photoreceptors is 5% or less. 2. The electrophotographic apparatus according to claim 1, further comprising an anti-reflection member that causes the main static elimination light in the main static elimination step to be incident orthogonally onto the surface of the photoreceptor and absorbs reflected light from the photoreceptor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12151388A JPH01291279A (en) | 1988-05-18 | 1988-05-18 | Electrophotographic device constituted by using amorphous silicon photosensitive body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12151388A JPH01291279A (en) | 1988-05-18 | 1988-05-18 | Electrophotographic device constituted by using amorphous silicon photosensitive body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01291279A true JPH01291279A (en) | 1989-11-22 |
Family
ID=14813064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12151388A Pending JPH01291279A (en) | 1988-05-18 | 1988-05-18 | Electrophotographic device constituted by using amorphous silicon photosensitive body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01291279A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7522862B2 (en) | 2006-05-02 | 2009-04-21 | Fuji Xerox Co., Ltd. | Neutralization device and image forming unit for use in image forming apparatus, and the image forming apparatus |
-
1988
- 1988-05-18 JP JP12151388A patent/JPH01291279A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7522862B2 (en) | 2006-05-02 | 2009-04-21 | Fuji Xerox Co., Ltd. | Neutralization device and image forming unit for use in image forming apparatus, and the image forming apparatus |
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